USITC Publication 5287•Certain Integrated Circuits and Products Containing the Same, Inv. 337-TA-1148
Certain Integrated Circuits and Products Containing the Same, Inv. 337-TA-1148
USITC Publication 5287Itc
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In the Matter of CERTAIN INTEGRATED CIRCUITS AND PRODUCTS CONTAINING THE SAME Investigation No. 337-TA-1148 Publication 5287 March 2022 U.S. International Trade Commission Washington, DC 20436
U.S. International Trade Commission Washington, DC 20436 www.usitc.gov In the Matter of CERTAIN INTEGRATED CIRCUITS AND PRODUCTS CONTAINING THE SAME Investigation No. 337-TA-1148 Publication 5287 March2022
UNITED STATES INTERNATIONAL TRADE COMMISSION Washington, D.C. In the Matter of CERTAIN INTEGRATED CIRCUITS AND PRODUCTS CONTAINING THE SAME Investigation No. 337-TA-1148 NOTICE OF A COMMISSION DETERMINATION TO REVIEW IN PART A FINAL INITIAL DETERMINATION FINDING NO VIOLATION OF SECTION 337 AND, ON REVIEW, TO AFFIRM THE FINDING OF NO VIOLATION; TERMINATION OF THE INVESTIGATION AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY: Notice is hereby given that the U.S. International Trade Commission has determined to review in part the final initial determination (‘‘ID’’) issued by the presiding administrative law judge (‘‘ALJ’’) on May 22, 2020, finding no violation of section 337 in the above-referenced investigation and, on review, to affirm the finding of no violation. The investigation is terminated. FOR FURTHER INFORMATION CONTACT: Michael Liberman, Esq., Office of the General Counsel, U.S. International Trade Commission, 500 E Street, SW, Washington, D.C. 20436, telephone (202) 205-2392. Copies of non-confidential documents filed in connection with this investigation may be viewed on the Commission’s electronic docket (EDIS) at https://edis.usitc.gov. For help accessing EDIS, please email EDIS3Help@usitc.gov. General information concerning the Commission may also be obtained by accessing its Internet server at https://www.usitc.gov. Hearing-impaired persons are advised that information on this matter can be obtained by contacting the Commission’s TDD terminal on (202) 205-1810. SUPPLEMENTARY INFORMATION: On March 15, 2019, the Commission instituted Inv. No. 337-TA-1148, Certain Integrated Circuits and Products Containing the Same under section 337 of the Tariff Act of 1930, as amended, 19 U.S.C. 1337 (“section 337”), based on a complaint filed by Tela Innovations, Inc. of Los Gatos, California (“Tela”). 84 FR 9558-59 (Mar. 15, 2019). The complaint alleges a violation of section 337 by reason of infringement of certain claims of U.S. Patent Nos. 7,943,966 (“the ’966 patent”); 7,948,012 (“the ’012 patent”); 10,141,334 (“the ’334 patent”); 10,141,335 (“the ’335 patent”); and 10,186,523 (“the ’523 patent”). The complainant also alleges the existence of a domestic industry. The notice of investigation names as respondents Acer, Inc. of New Taipei City, Taiwan; Acer America
2 Corporation of San Jose, California; AsusTek Computer Inc. of Taipai, Taiwan; Asus Computer International of Fremont, California; Intel Corporation of Santa Clara, California; Lenovo Group Ltd. of Beijing, China; Lenovo (United States) Inc. of Morrisville, North Carolina; Micro-Star International Co., Ltd. of New Taipei City, Taiwan; and MSI Computer Corp. of City of Industry, California (collectively, “Respondents”). Id. at 9559. The Commission’s Office of Unfair Import Investigations (“OUII”) is also named as a party in this investigation. Id. The Commission has previously terminated the investigation as to the ’966, ’012 and ’335 patents, and as to certain claims of the ’334 and ’523 patents. See Order No. 33 (Oct. 2, 2019), unreviewed by Notice (Oct. 22, 2019); Order No. 36 (Oct. 23, 2019), unreviewed by Notice (Nov. 15, 2019); and Order No. 44 (Jan. 6, 2020), unreviewed by Notice (Feb. 3, 2020). On May 22, 2020, the ALJ issued his “Initial Determination on Violation of Section 337 and Recommended Determination on Remedy and Bond” (“ID/RD”) finding that there is no violation of section 337 in the importation into the United States, the sale for importation, or the sale within the United States after importation of certain integrated circuits and products containing the same, in connection with the asserted claims of the ’334 and ’523 patents, and that a domestic industry in the United States that practices or exploits the asserted patents does not exist. The ID finds that Respondents directly infringe claims 1, 2, and 5 of the ’334 patent, and that claims 1, 2, 5, and 15 of the ’334 patent have been shown to be invalid. The ID also finds that Tela’s licensee has not been shown to practice any claims of the ’334 patent, and that the domestic industry requirement is not satisfied with respect to the ’334 patent. The ID finds that there is no violation of section 337 with respect to the ’334 patent. The ID further finds that Respondents directly infringe claims 1-11, 14-20, 25, and 26 of the ’523 patent, and that no claims of the ’523 patent have been shown to be invalid. The ID also finds that Tela’s licensee has not been shown to practice any claims of the ’523 patent, and that the domestic industry requirement is not satisfied with respect to the ’523 patent. The ID finds that there is no violation of Section 337 with respect to the ’523 patent. All the parties to the investigation filed petitions for review of various portions of the ID. On June 8, 2020, OUII filed a petition seeking review of the ID’s determination not to analyze whether the asserted domestic industry claims are invalid and, contingently, seeking review of the ID’s infringement findings. Also on June 8, 2020, Respondents filed a petition contingently seeking review of the ID’s infringement and validity findings. On June 11, 2020, Tela filed a petition seeking review of the ID’s findings concerning the validity and the technical prong of the domestic industry requirement. Tela also seeks contingent review of the ID’s infringement findings and the ID’s finding that Intel’s 45 nm process is prior art under 35 U.S.C. 102(g)(2). In addition, Tela seeks review of Order No. 30 (Sept. 4, 2019), which granted-in-part Tela’s motion for leave to supplement its contention interrogatory responses.
3 On June 18, 2020, the parties filed responses to the various petitions. Having examined the record in this investigation, including the final ID, the petitions for review, and the responses thereto, the Commission has determined to review the ID in part to correct a legal error in the ID’s domestic industry findings. On review, the Commission has determined to strike the paragraph relating to the ’334 patent on pages 101-102 of the ID and certain sentences relating to the ‘523 patent on page 168 of the ID. The Commission takes no position on the issue of whether the asserted domestic industry claims, i.e., claims 29-30 of the ’334 patent and claims 27-28 of the ’523 patent, are invalid. See Beloit Corp. v. Valmet Oy, 742 F.2d 1421, 1423 (Fed. Cir. 1984). The Commission has also determined to review the ID in part on the issue of whether Tela satisfied the economic prong of the domestic industry requirement, see ID at 185-188, and to take no position on this issue. See Beloit, 742 F.2d at 1423. The Commission has determined not to review the remainder of the ID, including the ID’s finding of no violation of section 337 in this investigation. The Commission has also determined not to review Order No. 30. The investigation is terminated. The Commission vote for this determination took place on September 23, 2020. The authority for the Commission’s determination is contained in section 337 of the Tariff Act of 1930, as amended, 19 U.S.C. 1337, and in Part 210 of the Commission’s Rules of Practice and Procedure, 19 CFR part 210. By order of the Commission. Lisa R. Barton Secretary to the Commission Issued: September 23, 2020
CERTAIN INTEGRAGTED CIRCUITS AND PRODUCTS CONTAINING THE SAME Inv. No. 337-TA-1148 CONFIDENTIAL CERTIFICATE OF SERVICE I, Lisa R. Barton, hereby certify that the attached NOTICE has been served via EDIS upon the Commission Investigative Attorney, John Shin, Esq., and the following parties as indicated, on 9/23/2020. Lisa R. Barton, Secretary U.S. International Trade Commission 500 E Street, SW, Room 112 Washington, DC 20436 On Behalf of Complainant Tela Innovations, Inc.: ☐ Via Hand Delivery ☐ Via Express Delivery ☐ Via First Class Mail ☒ Other: Email Notification of Availability to Download William D. Belanger, Esq. TROUTMAN PEPPER HAMILTON SANDERS LLP 125 High Street 19th Floor, High Street Tower Boston, MA 02110-2736 Email: William.Belanger@troutman.com On Behalf of Respondents Acer, Inc., Acer America Corp., Asustek Computer Inc., Asus Computer International, Intel Corporation, Lenovo Group Ltd., Lenovo (United States) Inc., Micro-Star International Co., Ltd., and MSI Computer Corp.: Todd M. Friedman, Esq. KIRKLAND & ELLIS LLP 601 Lexington Avenue New York, New York 10022 Email: tfriedman@kirkland.com ☐ Via Hand Delivery ☐ Via Express Delivery ☐ Via First Class Mail ☒ Other: Email Notification of Availability to Download
PUBLIC VERSION 1 UNITED STATES INTERNATIONAL TRADE COMMISSION Washington, D.C. In the Matter of CERTAIN INTEGRATED CIRCUITS AND PRODUCTS CONTAINING THE SAME Investigation No. 337-TA-1148 COMMISSION OPINION The Commission has determined that there has been no violation of section 337 of the Tariff Act of 1930, as amended, 19 U.S.C. § 1337 (“section 337”) in this investigation with respect to U.S. Patent Nos. 7,943,966 (“the ’966 patent”); 7,948,012 (“the ’012 patent”); 10,141,335 (“the ’335 patent”); 10,186,523 (“the ’523 patent”); and 10,141,334 (“the ’334 patent”) (collectively, “the Asserted Patents”). This opinion sets forth the Commission’s reasoning in support of the Commission’s determination. In addition, the Commission adopts the findings in the ID that are not inconsistent with this opinion. I. BACKGROUND A. Procedural History The Commission instituted this investigation under section 337 on March 15, 2019, based on a complaint filed by Tela Innovations, Inc. of Los Gatos, California (“Tela”). 84 Fed. Reg. 9558-59 (Mar. 15, 2019). The complaint alleges a violation of section 337 by reason of infringement of certain claims of the ’966 patent, the ’012 patent, the ’335 patent, the ’523 patent, and the ’334 patent. The notice of investigation names as respondents Acer, Inc. of New Taipei City, Taiwan; Acer America Corporation of San Jose, California (together, “Acer”); AsusTek
PUBLIC VERSION 2 Computer Inc. of Taipai, Taiwan; Asus Computer International of Fremont, California (together, “Asus”); Intel Corporation of Santa Clara, California (“Intel”); Lenovo Group Ltd. of Beijing, China; Lenovo (United States) Inc. of Morrisville, North Carolina (together, “Lenovo”); Micro- Star International Co., Ltd. of New Taipei City, Taiwan; and MSI Computer Corp. of City of Industry, California (together, “MSI”), (all respondents collectively, “Respondents”). Id. at 9559. The Commission’s Office of Unfair Import Investigations is also named as a party in this investigation. Id. The Commission subsequently terminated the investigation as to all asserted claims of the ’966, ’012, and ’335 patents, as well as to certain claims of the ’334 patent and the ’523 patent. See Order No. 33 (Oct. 2, 2019), unreviewed by Notice (Oct. 22, 2019); Order No. 36 (Oct. 23, 201), unreviewed by Notice (Nov. 15, 2019); Order No. 45, unreviewed by Notice (Feb. 3, 2020). At the hearing, Tela asserted claims 1, 2, 5, and 15 of the ’334 patent and claims 1-11, 14-20, 25, and 26 of the ’523 patent against the accused products. For the technical prong of the domestic industry requirement, Tela argued that the domestic industry products practiced claims 29-30 of the ’334 patent and claims 27-28 of the ’523 patent. ID at 5. On July 17, 2019, the ALJ held a Markman hearing and, on October 2, 2019, issued Order No. 34 (“the Markman Order”), construing certain claim terms of the patents at issue. Order No. 34 (July 17, 2019). On August 19, 2019, complainant Tela moved for leave to supplement its contention interrogatory responses concerning infringement, domestic industry, and the public interest. On August 28, 2019, Respondents and the Commission’s investigative attorney (“the IA”) filed responses opposing the motion in part. On September 4, 2019, the ALJ issued Order No. 30,
PUBLIC VERSION 3 which partly granted and partly denied Tela’s motion. Order No. 30 (Sep. 4, 2019).1 The evidentiary hearing took place on December 9-13, 2019. On May 22, 2020, the ALJ issued the final ID finding that there is no violation of section 337 in the importation into the United States, the sale for importation, or the sale within the United States after importation of certain integrated circuits and products containing the same, in connection with the remaining asserted claims of the ’334 and ’523 patents. ID at 204. In particular, the ID finds no domestic industry with respect to either patent. The ID’s findings are summarized in the following table: Asserted Patent ID’s Infringement Findings Per Claim ID’s Domestic Industry Findings Per Claim ID’s Validity Findings Per Claim The ’334 patent 1, 2, 5 – directly infringed 15 – not infringed 29, 30 – not practiced 1, 2, 5, 15 – shown to be invalid 29, 30 – the validity is not addressed 2 The ’523 patent 1-11, 14-20, 25, 26 – directly infringed 27, 28 – not practiced 1-11, 14-20, 25, 26 – not shown to be invalid 27, 28 – the validity is not addressed 3 See ID at 5, 101, 168, 188. Tela filed a petition for review of various portions of the ID and Order No. 30.4 The IA 1 For a detailed procedural history, see ID at 1-3. 2 See discussion infra at III. 3 See discussion infra at III. 4 See Complainant Tela Innovations, Inc’s Corrected Petition and Contingent Petition for Review (June 11, 2020) (“ComplPet”).
PUBLIC VERSION 4 likewise filed a petition for review of the ID in part.5 Respondents filed a contingent petition for review.6 The parties also filed responses to the various petitions.7 B. Semiconductor Chip Technology and the Asserted Patents The technology at issue relates to the design and manufacture of semiconductor chips with lithographic and epitaxial processes. ID at 5, 68. A semiconductor is a material that has electrical conductivity properties falling between that of a conductor and an insulator. ID at 5-6 (citing Joint Technology Tutorial (“JTT”) at 2). The relevant transistor in the present investigation is a complementary metal oxide semiconductor, or CMOS. Id. (citing JTT at 11, 14). A CMOS transistor consists of four basic components: (1) a body; (2) a source region made of one type of semiconductor; (3) a drain region also made of that type of semiconductor; and (4) a gate made of metal and an oxide, where the gate oxide functions as an insulator by separating the gate metal from the other components. Id. (citing JTT at 10-14). The circuitry on a CMOS chip is formed through a multi-stage process, including layout, in which the size, shape, and spacing of the chip’s features are specified, followed by photolithography. Id. at 6-7 (citing JTT at 17, 19; Respondents’ Initial Claim Construction Brief, Ex. 6 at 6.). Further processing can then be used to build features on the wafer. The parties’ experts provided lengthy overviews of the technology. 5 See Petition of the Office of Unfair Import Investigations for Review-in-Part of the Initial Determination on Violation of Section 337 (June 8, 2020) (“IAPet”). 6 See Respondents’ Contingent Petition for Review of The Initial Determination (June 8, 2020) (“RespPet”). 7 See Complainant Tela Innovations, Inc.’s Response to Respondents’ and Staff’s Petitions for Review of The Initial Determination (June 18, 2020) (“ComplResp”); Response of The Office of Unfair Import Investigations to The Private Parties’ Petitions for Review of The Final Initial Determination On Violation Of Section 337 (June 18, 2020) (“IAResp”); Respondents’ Opposition to Complainant’s Petition for Review of The Initial Determination (June 18, 2020) (“RespResp”).
PUBLIC VERSION 5 See generally CX-1144C (Foty WS) at Q/A 46-135; RX-14C (Subramanian WS) at Q/A 15-69. The ’334 patent is entitled “Semiconductor Chip Including Region Having Rectangular- Shaped Gate Structures and First-Metal Structures.” ’334 patent. The ’334 patent issued on November 27, 2018. Id. The ’523 patent is entitled “Semiconductor Chip Having Region Including Gate Electrode Features Formed in Part From Rectangular Layout Shapes on Gate Horizontal Grid and First- Metal Structures Formed in Part From Rectangular Layout Shapes on at Least Eight First-Metal Gridlines of First-Metal Vertical Grid.” ’523 patent. The application leading to the ’523 patent was filed on August 31, 2018, and claims priority, through a series of intervening continuation applications, to a provisional application, 60/781,288, filed on March 9, 2006. Id. The ’523 patent issued on January 22, 2019. The remaining Asserted Patents both relate to the design and manufacture of integrated circuits forming semiconductor chips. The ’334 patent focuses on the shape and fabrication of “structures” on the resulting chip, see, e.g., ’334 patent at claim 1, while the ’523 patent focuses on the “layout shapes” used as an input to a lithography process during fabrication of the chip, see, e.g., ’523 patent at claim 1. These patents aim to address the manufacturing problems created by the “lithographic gap,” which is the “difference between the minimum feature size and the wavelength of light used in the photolithography process.” ’523 patent at 4:11-13. C. Accused Products The accused products in this investigation are integrated circuits – central processing units (“CPUs”) and chipsets – fabricated with respondent Intel’s 14 nm and 10 nm manufacturing
PUBLIC VERSION 6 processes, 8 and desktops, laptops, motherboards, and other computers manufactured and sold by respondents Acer, Asus, Lenovo, and MSI9 containing those integrated circuits. ID at 10 (citing CIB at 8-9). The ID notes that the individual part and model numbers are too numerous to be reproduced in the ID but are listed in demonstratives to Tela’s expert’s testimony and attached to the ID as Appendix A. Id. (citing CX-1144C at Q/A 7- 11; CDX-0003; CDX-0004; CDX-0005; CDX-0006; CDX-0007). All of the products listed in these demonstratives are referred to as the “Accused Products.” The 14 nm products listed in CDX-0003 from respondent Intel will be referred to as the “Intel 14 nm Products,” and the 10 nm products will be referred to as the “Intel 10 nm Products.” See id. The ID further notes that Tela’s expert, Dr. Foty, and Respondents’ expert, Dr. Subramanian, have provided demonstratives associating subsets of the Intel 14 nm Products and Intel 10 nm Products with certain “cells”10 used in Tela’s infringement case. Id. These subsets, along with their associated cells, are listed below: Intel 14 nm Products Product Family/Architecture Associated Cells Broadwell; Sky Lake; [[ ]] [[ ]] 8 The 14 nm and 10 nm manufacturing processes refer to the processes of making integrated circuits with certain characteristics, referred to as 14 nm and 10 nm products, respectively. See CX-1144C (Foty) at Q/A 7-11, 190, 606-614, 1881-1887, 1891-1892, 2358, 2401. 9 See supra at I.A. 10 “Typically the layout of an integrated circuit is constructed from smaller layout blocks called cells, which correspond to the layout of a particular function. An example of a cell is a flip-flop, which is a common element in an integrated circuit for storing data.” CX-1144 (Foty) at Q/A 107.
PUBLIC VERSION 7 Intel 14 nm Products Product Family/Architecture Associated Cells Kaby Lake; Coffee Lake [[ ]] Cascade Lake [[ ]] Goldmont; Goldmont Plus [[ ]] [[ ]] [[ ]] Ice Lake Chipset; Cannon Lake Chipset [[ ]] Intel 10 nm Products Product Family/Architecture Associated Cells Ice Lake; Cannon Lake [[ ]] [[ ]] [[ ]] ID at 10-11 (citing CDX-0012C at *25-26; RDX-0016C at *37-39). D. Domestic Industry (“DI”) Products The domestic industry products in this investigation are integrated circuits, more specifically, 14 nm Exynos computer processors, made for mobile devices. ID at 8 (citing CIB at 9). Tela’s licensee, Samsung Austin Semiconductor (“SAS”), performs front-end wafer fabrication in Austin, Texas. Id.; ComplPet at 30-32. Tela explains that these 14 nm Exynos processors are “fabricated using a version of Samsung’s11 14 nm process technology – 11 Hereinafter, “Samsung” stands for Samsung Electronics Co., Ltd. ID at 177.
PUBLIC VERSION 8 LN14LPEM (14LPE), LN14LPPM (14LPP), or LN14LPCM (14LPC).” ID at 8 (citing CIB at 10 (citing CX-1144C at Q/A 1618-1622, 2692-1693; CX-0033C at 9; CX-1228C at 52:12-54:7)). The particular processors made by each of these processes and relied on by Tela to satisfy the technical prong of the domestic industry requirement, are listed below: Tela’s “DI Products” Code Name Fab Part ID Brand Name Process Technology [[ ]] S5E7420 Exynos 7 Octa (7420) Mobile Processor 14LPE [[ ]] S5E8890 Exynos 8 Octa (8890) Mobile Processor 14LPP [[ ]] S5E8890 Exynos 8 Octa (8890) Mobile Processor 14LPP [[ ]] S5E7880 Exynos 7880 Mobile Processor 14LPP [[ ]] S5E7570 Exynos 7 Quad (7570) Mobile Processor 14LPC [[ ]] S5E7870 Exynos 7 Octa (7870) Mobile Processor 14LPC [[ ]] S5E7883 Exynos 7883 Mobile Processor 14LPC Id. at 9 (citing CIB at 10) (internal citations omitted). These processors are referred together as the “DI Products.”12 12 In Order No. 30, the ALJ denied Tela’s belated request to supplement its contention interrogatory responses; Tela had sought to add five Qualcomm processors to the DI Products. See Order No. 30 at 1-2. Tela now urges the Commission to reverse Order No. 30 and to consider the Qualcomm processors in its technical and economic prong analyses. See generally ComplPet at 46-60. The Commission declines Tela’s request because Order No. 30 reflects a reasonable exercise of judicial discretion. Further, Order No. 30 appropriately considers the moving party’s diligence and the prejudice to the non-moving party, which comports with similar orders. See, e.g., Certain Semiconductor Devices, Semiconductor Device Packages, and Products Containing Same, Inv. No. 337-TA-1010, Order No. 58 at 3 (Jan. 17, 2017) (assessing the complainant’s diligence and the prejudice to the respondent); Certain Microelectromechanical Systems (“MEMS Devices”) and Products Containing the Same, Inv. No. 337-TA-876, Order No. 49 at 2 (Dec. 13, 2013) (finding that the respondent’s lack of diligence undermined its ability to show good cause
PUBLIC VERSION 9 Tela’s evidentiary presentation regarding the economic prong of the domestic industry requirement and discussion of the relied upon investments is based on a separate, three-tiered classification of the DI Products, to accommodate situations in which less than all of them satisfy technical prong. Id. The tiers are as follows: Tela’s Economic Prong Groups Group 1 [[ ]] (7420) Group 2 Group 1 + [[ ]] (8890), [[ ]] (8890), [[ ]] (7880) Group 3 Group 1 + Group 2 + [[]] (7570) + [[ ]] (7870) + [[ ]] (7883) Id. (citing CIB at 160; RIB at 172-173). II. STANDARD ON REVIEW Under Commission Rule 210.43, the Commission will review an ID where it appears that – (1) a finding or conclusion of material fact is clearly erroneous; (2) a legal conclusion is erroneous, without governing precedent, rule or law, or constitutes an abuse of discretion; or (3) the determination is one affecting Commission policy. 19 C.F.R. § 210.43. The Commission may review an ID on the basis of a petition for review or on its own initiative. 19 C.F.R. §§ 210.43, 210.44. The party seeking review is required to specify the issues for which review is sought. Any issue that is not raised in the petition is deemed to have been abandoned and may be disregarded by the Commission, unless the Commission determines to for supplementing an interrogatory response). Accordingly, the Commission has not included the Qualcomm processors in the DI products.
PUBLIC VERSION 10 review the issue on its own initiative. Commission review will encompass those issues for which at least one participating Commissioner votes to review. Id. Commission review of an initial determination is limited to the issues set forth in the notice of review and all subsidiary issues therein. Certain Bar Clamps, Bar Clamp Pads, and Related Packaging Display and Other Materials, Inv. No. 337-TA-429, Comm’n Op. at 3 (Jan. 4, 2001). Once the Commission determines to review an initial determination, its review is de novo. Certain Polyethylene Terephthalate Yarn and Products Containing Same, Inv. No. 337-TA-457, Comm’n Op. at 9 (Jun. 18, 2002). Upon review the “Commission has ‘all the powers which it would have in making the initial determination,’ except where the issues are limited on notice or by rule.” Certain Flash Memory Circuits and Products Containing Same, Inv. No. 337-TA-382, Comm’n Op. on the Issues Under Review and on Remedy, the Public Interest, and Bonding at 9- 10 (Jun. 2, 1997), USITC Pub. 3046 (July 1997) (quoting Certain Acid-Washed Denim Garments and Accessories, Inv. No. 337-TA-324, Comm’n Op. at 5 (Nov. 1992)). On review, “the Commission may affirm, reverse, modify, set aside or remand for further proceedings, in whole or in part, the initial determination of the administrative law judge. In addition, the Commission may take no position on specific issues or portions of the initial determination of the administrative law judge. The Commission may also make any findings or conclusions that in its judgment are proper based on the record in the proceeding.” 19 C.F.R. § 210.45. III. ANALYSIS While analyzing invalidity and other defenses raised by Respondents, the ID declines to analyze respondents’ arguments concerning the invalidity of the asserted domestic industry
PUBLIC VERSION 11 claims.13 See ID at 101, 168. The IA sought review of the ID in part, arguing that the ID’s decision not to analyze whether the asserted DI claims are invalid is a legal error. IAPet at 17. The Commission has determined to review the ID in part on this issue. The ID states: Before turning to the[] merits [of various invalidity and unenforceability theories for the 334 patent], however, a few preliminary points are warranted. Two of the disputed claims, 29 and 30, are pertinent only to the technical prong of domestic industry. See RIB at 74-75; SIB at 83-84. In general, however, it is “Commission practice not to couple an analysis of domestic industry to a validity analysis.” Certain Soft-Edged Trampolines and Components Thereof, Inv. No. 337-TA-908, Comm’n Op. at 53 (May 1, 2015). Indefiniteness is the only basis for invalidity that bears on whether the technical prong is met, because indefiniteness “ma[kes] it impossible for the complainant to demonstrate whether a patent claim [is] practiced.” Certain Silicon Microphone Packages and Products Containing the Same, Inv. No. 337-TA-695, Notice at 3 (Jan. 21, 2011). But indefiniteness is not one of the asserted grounds of invalidity of these two claims. See RIB at 74-75; SIB at 83-84. Therefore, whether claims 29 and 30 of the 334 patent are invalid is not relevant, and the parties’ dispute over these claims need not be resolved or otherwise addressed. ID at 101-102. See also id. at 168 (“Claim 27 [of the ’523 patent] is pertinent only to the technical prong of domestic industry. See RIB at 148; SIB at 83-84. Thus, because indefiniteness is not an asserted ground of invalidity of claim 27, the parties’ dispute over that claim need not be resolved or otherwise addressed.”) (citing Silicon Microphone Packages, Inv. No. 337-TA-695, Notice at 3). We find that the ID’s determination that the parties’ dispute over validity of the asserted DI claims “need not be resolved or otherwise addressed” is legally erroneous. See ID at 102. While the ID correctly notes that it is “Commission practice not to couple an analysis of domestic industry to a validity analysis,” ID at 101, this statement, correctly interpreted, indicates that a 13 As noted previously, the asserted DI claims are: claims 29-30 of the ‘334 patent and claims 27- 28 of the ’523 patent.
PUBLIC VERSION 12 technical prong analysis and a validity analysis coexist and one does not affect, or preclude, the other. Commission precedent supports this interpretation. Where the technical prong is otherwise met because the DI claims read on the DI products, but the DI claims are invalid, there can be no violation because the domestic industry articles are not protected by the patent. See 19 U.S.C. § 1337(a)(2) (the DI articles must be “protected by the patent”). Thus, as the IA correctly points out, “the Trampolines line of cases merely clarifies that even if a domestic industry claim is invalid, such an invalidity finding does not preclude a finding that the complainant’s domestic industry article has otherwise met the technical prong of the domestic industry requirement[,]” i.e., by finding that the asserted DI products meet the limitations of the relevant claims. IAPet at 19.14 In short, the question of whether the DI claims are valid is a separate question argued by the parties that the ID should have addressed. We therefore strike the paragraph quoted above, see ID at 101-102, and the following sentences relating to the ’523 patent: Claim 27 is pertinent only to the technical prong of domestic industry. See RIB at 148; SIB at 83-84. Thus, because indefiniteness is not an asserted ground of invalidity of claim 27, the parties’ dispute over that claim need not be 14 The IA’s petition cites, inter alia, Certain Silicon Microphone Packages and Products Containing the Same, Inv. No. 337-TA-695, USITC Pub. No. 4293, Notice at 3 (Jan. 21, 2011) (“The Commission has determined to review and vacate the ID’s conclusion that the technical prong of the domestic industry requirement, 19 U.S.C. § 1337(a)(2) & (a)(3), is not met where all the asserted patent claims are found invalid. It is Commission practice not to couple an analysis of domestic industry to a validity analysis.”) (citation omitted); and Certain Infotainment Systems, Components Thereof, and Automobiles Containing the Same, Inv. No. 337-TA-1119, Comm. Op. at 27-44 (April 30, 2020)). See IAPet at 19-20. See also Certain Microlithographic Machines and Components Thereof, Inv. 337-TA-468, Initial Determination at 68, 447 (Jan. 29, 2003) (finding that the technical prong of the domestic industry requirement is satisfied with respect to the claims that were found to be invalid), unreviewed by Notice (March 17, 2003).
PUBLIC VERSION 13 resolved or otherwise addressed. Silicon Microphone Packages, Inv. No. 337- TA-695, Notice at 3. ID at 168.15 We note Tela’s assertion that “[d]espite requesting that the Commission review the ID’s determinations regarding obviousness of the ʼ523 DI claims, the Staff did not assert obviousness as to any DI claim before the ALJ. (ID at 168; SIB at 113-14.) Staff thus waived any arguments that the DI claims of the ʼ523 Patent are obvious.” ComplResp at 46. Tela’s assertion, however, does not warrant a finding of waiver. The IA petitions for review of the ID’s alleged legal errors unrelated to the merits of the underlying invalidity contentions regarding the DI claims, and, therefore, the IA is permitted to petition for review of the question of whether the ID made a legal error in its analysis to conclude that the parties’ invalidity dispute need not be addressed. See IAPet at 21; accord Myco Industries, Inc. v. BlephEx, LLC, 955 F.3d 1, 11 n.4 (Fed. Cir. 2020) (“‘While a party can waive his or her ability to appeal a ruling for failure to object, there can be no waiver here of the Judge’s duty to apply the correct legal standard.’”) (quotations omitted); GPNE Corp. v. Apple Inc., 830 F.3d 1365, 1372 (Fed. Cir. 2016) (“In general, ‘litigants waive their right to present new claim construction disputes if they are raised for the first time after trial.’ . . . [T]his is not what happened here.”) (internal citations omitted). Accordingly, we find that the ID legally erred in concluding that a validity analysis does not need to be performed for claims that pertain only to the technical prong of the domestic 15 We note that, in addition, the above two sentences appear to contain a clerical error and were likely meant to read as follows: “Claims 27 and 28 are pertinent only to the technical prong of domestic industry. . . . Thus, because indefiniteness is not an asserted ground of invalidity of claims 27 and 28, the parties’ dispute over these claims need not be resolved or otherwise addressed.” See ID at 168; see also IAPet at 18 n. 4. The Commission’s decision to strike the above two sentences, however, renders this issue moot.
PUBLIC VERSION 14 industry requirement. However, the ID found no violation of section 337 because Tela does not practice the asserted DI claims with respect to either the ’334 or ’523 patents. See ID at 188-89. The Commission has determined not to review the finding concerning the technical prong of the domestic industry requirement. In light of this determination, there is no need for the Commission in this instance to resolve whether the asserted DI claims (i.e., claims 29-30 of the ’334 patent and claims 27-28 of the ’523 patent) are valid because this issue will not affect the ultimate determination that there is no violation of section 337. Accordingly, the Commission takes no position on the issue of whether claims 29-30 of the ’334 patent and claims 27-28 of the ’523 patent are valid. See Beloit Corp. v. Valmet Oy, 742 F.2d 1421, 1423 (Fed. Cir. 1984). The Commission has also determined to review the ID in part on the issue of whether Tela satisfied the economic prong of the domestic industry requirement, see ID at 185-188, and to take no position on this issue. See Beloit, 742 F.2d at 1423. IV. CONCLUSION For the reasons set forth herein, the Commission determines that complainant Tela has not established a violation of section 337 by Respondents with respect to the asserted claims of the ’334 and ’523 patents. Accordingly, the investigation is terminated with a finding of no violation of section 337. By order of the Commission. Lisa R. Barton Secretary to the Commission Issued: December 30, 2020
CERTAIN INTEGRAGTED CIRCUITS AND PRODUCTS CONTAINING THE SAME Inv. No. 337-TA-1148 PUBLIC CERTIFICATE OF SERVICE I, Lisa R. Barton, hereby certify that the attached OPINION, COMMISION has been served via EDIS upon the Commission Investigative Attorney, John Shin, Esq., and the following parties as indicated, on December 30, 2020. Lisa R. Barton, Secretary U.S. International Trade Commission 500 E Street, SW, Room 112 Washington, DC 20436 On Behalf of Complainant Tela Innovations, Inc.: William D. Belanger, Esq. TROUTMAN PEPPER HAMILTON SANDERS LLP 125 High Street 19th Floor, High Street Tower Boston, MA 02110-2736 Email: William.Belanger@troutman.com ☐ Via Hand Delivery ☐ Via Express Delivery ☐ Via First Class Mail ☒ Other: Email Notification of Availability to Download On Behalf of Respondents Acer, Inc., Acer America Corp., Asustek Computer Inc., Asus Computer International, Intel Corporation, Lenovo Group Ltd., Lenovo (United States) Inc., Micro-Star International Co., Ltd., and MSI Computer Corp.: Todd M. Friedman, Esq. KIRKLAND & ELLIS LLP 601 Lexington Avenue New York, New York 10022 Email: tfriedman@kirkland.com ☐ Via Hand Delivery ☐ Via Express Delivery ☐ Via First Class Mail ☒ Other: Email Notification of Availability to Download
UNITED STATES INTERNATIONAL TRADE COMMISSION Washington, D.C. In the Matter of CERTAIN INTEGRATED CIRCUITS AND PRODUCTS CONTAINING THE SAME Inv. No. 337-TA-1148 INITIAL DETERMINATION ON VIOLATION OF SECTION 337 AND RECOMMENDED DETERMINATION ON REMEDY AND BOND Administrative Law Judge Cameron Elliot (May 22, 2020) Pursuant to the Notice of Investigation and Rule 210.42(a) of the Rules of Practice and Procedure of the United States International Trade Commission, this is my Initial Determination in the matter of Certain Integrated Circuits and Products Containing the Same, Investigation No. 337-TA-1148.
i TABLE OF CONTENTS Page I. INTRODUCTION............................................................................................................. 1 A. Procedural Background ............................................................................................1 B. The Parties ...............................................................................................................3 C. The Asserted Patents and Claims.............................................................................5 D. Products at Issue ......................................................................................................8 1. Domestic Industry Products .........................................................................8 2. Accused Products .......................................................................................10 II. STANDARDS OF LAW ................................................................................................. 11 A. Standing .................................................................................................................11 B. Claim Construction ................................................................................................11 C. Infringement ...........................................................................................................15 D. Domestic Industry ..................................................................................................16 1. Technical Prong .........................................................................................16 2. Economic Prong .........................................................................................17 E. Invalidity ................................................................................................................18 1. 35 U.S.C. § 102 ..........................................................................................18 2. 35 U.S.C. § 103 ..........................................................................................19 3. 35 U.S.C. § 112 ..........................................................................................21 III. IMPORTATION AND JURISDICTION ..................................................................... 23 IV. U.S. PATENT NO. 10,141,334 ....................................................................................... 24 A. Level of Ordinary Skill in the Art ..........................................................................24 B. Claims-at-Issue ......................................................................................................24 C. Claim Construction ................................................................................................29 D. Infringement ...........................................................................................................30 1. Claim 1 .......................................................................................................31 a. Gate structures positioned in accordance with a gate horizontal grid .................................................................................................33 b. First-metal structures positioned in accordance with a first- metal vertical grid ..........................................................................41 c. Each gate gridline has at least one gate structure positioned thereon............................................................................................48
ii d. Contact Structures ..........................................................................59 e. Each of the at least six contact structures positioned and sized to overlap both edges of the top surface of the gate structure to which it is in physical and electrical contact .................................61 2. Claim 2 .......................................................................................................66 3. Claim 5 .......................................................................................................67 4. Claim 15 .....................................................................................................67 a. Diffusion Region ............................................................................67 b. Substantially rectangular shape......................................................80 E. Domestic Industry – Technical Prong....................................................................81 1. Product Representativeness .......................................................................81 2. Disputed Claims .........................................................................................91 a. Claim 29 .........................................................................................91 b. Claim 30 .........................................................................................99 F. Validity and Other Defenses ................................................................................101 1. 35 U.S.C. § 112, ¶ 1 (Written Description) .............................................108 2. 35 U.S.C. § 112, ¶ 1 (Enablement) ..........................................................110 3. Intel 14nm Products .................................................................................116 4. Kitabayashi in combination with Intel 45nm Products ............................116 5. Becker, and Becker in combination with Greenway ...............................124 6. Secondary Considerations........................................................................126 7. Covenant Not to Sue ................................................................................127 V. U.S. PATENT NO. 10,186,523 ..................................................................................... 128 A. Level of Ordinary Skill in the Art ........................................................................128 B. Claims-at-Issue ....................................................................................................129 C. Claim Construction ..............................................................................................138 D. Infringement .........................................................................................................139 1. Undisputed Claims ...................................................................................140 2. Disputed Claims .......................................................................................140 a. Gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process ......................................................................142
iii b. Gate electrode feature layout shapes positioned in accordance with a gate horizontal grid ...........................................................150 c. First-metal structure layout shapes are positioned in accordance with a first-metal vertical grid......................................................151 d. Each gate gridline has at least one gate electrode feature layout shape positioned thereon ..............................................................154 e. At least six gate contact structures formed within the region of the semiconductor chip . . . wherein at least six gate electrode features within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six gate contact structures ................................................155 f. Diffusion region ...........................................................................156 g. Diffusion contact structure ...........................................................157 E. Domestic Industry – Technical Prong..................................................................159 1. Product Representativeness .....................................................................159 2. Disputed Claims .......................................................................................159 a. Claim 27 .......................................................................................160 b. Claim 28 .......................................................................................166 F. Validity ................................................................................................................168 VI. DOMESTIC INDUSTRY - ECONOMIC PRONG ................................................... 176 A. Qualifying Expenditures ......................................................................................177 B. “Significant” or “Substantial” ..............................................................................182 VII. CONCLUSIONS OF LAW .......................................................................................... 188 VIII. RECOMMENDED DETERMINATION ON REMEDY AND BOND ................... 190 A. Limited Exclusion Order......................................................................................191 B. Cease and Desist Order ........................................................................................194 C. Bond .....................................................................................................................195 D. Public Interest ......................................................................................................196 1. Public Health and Welfare .......................................................................196 2. Competitive Conditions in the United States Economy ..........................199 3. Production of Like or Directly Competitive Articles in the United States ........................................................................................................200
iv 4. Effect upon United States Consumers .....................................................200 5. Conclusion ...............................................................................................201 IX. INITIAL DETERMINATION AND ORDER ........................................................... 203
v TABLE OF ABBREVIATIONS CDX Complainant’s Demonstrative Exhibit CIB Complainant’s Revised Initial Post-Hearing Brief CPB Complainant’s Pre-Hearing Brief CPX Complainant’s Physical Exhibit CRB Complainant’s Reply Post-Hearing Brief CX Complainant’s Exhibit Dep. Tr. Deposition Transcript Hr’g Tr. Hearing Transcript JX Joint Exhibit RDX Respondents’ Demonstrative Exhibit RIB Respondents’ Initial Post-Hearing Brief RPB Respondents’ Pre-Hearing Brief RPX Respondents’ Physical Exhibit RRB Respondents’ Reply Post-Hearing Brief RX Respondents’ Exhibit SDX Commission Investigative Staff’s Demonstrative Exhibit SIB Commission Investigative Staff’s Initial Post-Hearing Brief SPB Commission Investigative Staff’s Pre-Hearing Brief SPX Commission Investigative Staff’s Physical Exhibit SRB Commission Investigative Staff’s Reply Post-Hearing Brief SX Commission Investigative Staff’s Exhibit
1 I. INTRODUCTION A. Procedural Background Complainant Tela Innovations, Inc. (“Tela” or “Complainant”) filed the complaint underlying this Investigation on December 19, 2018, amended the complaint on February 7, 2019, and filed supplements to the amended complaint on February 13, 2019 and February 26, 2019. The amended complaint alleged respondents Acer, Inc., Acer America Corporation, AsusTek Computer Inc., Asus Computer International, Intel Corporation, Lenovo Group Ltd., Lenovo (United States) Inc., Micro-Star International Co., Ltd., and MSI Computer Corp. (altogether, “Respondents”) import or sell in connection with an importation certain products that infringe one or more claims of U.S. Patent Nos. 7,943,966 (“the 966 patent”), 7,948,012 (“the 012 patent”), 10,141,334 (“the 334 patent”), 10,141,335 (“the 335 patent”), and 10,186,523 (“the 523 patent”). By publication of a notice in the Federal Register on March 15, 2019, the U.S. International Trade Commission ordered that: Pursuant to subsection (b) of section 337 of the Tariff Act of 1930, as amended, an investigation be instituted to determine whether there is a violation of subsection (a)(1)(B) of section 337 in the importation into the United States, the sale for importation, or the sale within the United States after importation of products identified in paragraph (2) by reason of infringement of one or more of claims 2, 32, and 33 of the ’966 patent; claims 2, 27, and 28 of the ’012 patent; claims 1, 2, 5, 6, 9, 11, 15, 20, and 24 of the ’334 patent; claims 1, 2, 5, 6,9, 11, 15, 20, and 24 of the ’335 patent; and claims 1-12, 14-20, 22-24, and 26 of the '523 patent, and whether an industry in the United States exists as required by subsection (a)(2) of section 337[.] 43 Fed. Reg. 9559 (Mar. 15, 2019). On April 3, 2019, I set a target date of August 14, 2020 for completion of this investigation via initial determination. Order No. 4. Also on April 3, 2019, I set a Markman hearing date of July 8 and July 10, 2019 and the evidentiary hearing for December 9-13, 2019. Order No. 5. On April 11, 2019, at the request of the parties, the Markman hearing was moved to July 15 and July 17, 2019. Order No. 6.
2 On July 17, 2019, I held a technology tutorial and Markman hearing, and on October 2, 2019, issued Order No. 34, construing certain claim terms of the patents at issue. On July 29, 2019, Respondents moved for summary determination of invalidity due to lack of written description and enablement (Motion No. 1148-024) which was denied on August 20, 2019 with Order No. 27. On September 19, 2019, Tela moved to terminate the investigation with respect to all asserted claims of the 966 and 012 patents (Motion No. 1148-033), which was granted via initial determination on October 2, 2019 with Order No. 33. On October 8, 2019, Respondents moved for summary determination of invalidity due to indefiniteness (Motion No. 1148-035) based on certain findings made in Order No. 34, but Respondents withdrew the motion on October 22, 2019 in light of Tela’s co-pending motion to terminate the pertinent claims and patent from the investigation (Motion No. 1148-037). I granted Tela’s motion via initial determination on October 23, 2019 with Order No. 36, which terminated the investigation as to all asserted claims of the 335 patent, claims 6, 11, and 20 of the 334 patent, and claim 12 of the 523 patent. Also on October 8, 2019, Tela moved for summary determination that it satisfies the economic prong of domestic industry (1148-036). I denied Tela’s motion on November 4, 2019 with Order No. 38, but treated certain facts as established under Commission Rule 210.18(e) related to this issue and discussed further below. The evidentiary hearing took place over December 9-13, 2019. Following the hearing, on January 3, 2020, Tela moved to terminate the investigation in part as to claims 9 and 24 of the 334 patent, and claims 22-24 of the 523 patent (Motion No. 1148-054). I granted Tela’s motion via initial determination on January 6, 2020 with Order No. 45. As of the date of this initial
3 determination, no motions are pending, and only the 334 patent and 523 patent remain asserted (hereafter, “the Asserted Patents”). Pursuant to the procedural schedule, the parties submitted initial and reply post-hearing briefs on January 6, 2020 and January 17, 2020, respectively. Finally, on February 19, 2020, I extended the target date by six weeks via initial determination with Order No. 47 due in part to the volume of contested issues in this investigation. B. The Parties Complainant Tela Innovations, Inc. is a United States corporation organized and existing under the laws of Delaware and having its principal place of business in Los Gatos, California. CPB at 7. Tela conducts engineering, research, and design related to integrated circuit design in areas such as performance, area, power consumption, and manufacturability characteristics. See id. Respondent Intel Corporation (“Intel”) is a corporation organized and existing under the laws of Delaware and having its principal place of business in Santa Clara, California. RIB at 5. Intel is a historically significant entity in the semiconductor industry with offices worldwide, developing and selling, among other things, central processing units and other processors for personal and server-level computers. See generally id. Respondent Acer, Inc. is a foreign corporation organized and existing under the laws of Taiwan and having a principal place of business in New Taipei City 221, Taiwan. RIB at 5. Acer, Inc. designs and sells, among other things, personal computers containing Intel processors. See id. at 7. Respondent Acer America Corporation is a corporation organized and existing under the laws of California and having a principal place of business in San Jose, California. Id. at 5. Acer America Corporation is a subsidiary of Acer, Inc. (together, “Acer”). Id.
4 Respondent ASUSTek Computer, Inc. is a foreign corporation organized and existing under the laws of Taiwan and having a principal place of business in Beitou District Taipei 112, Taiwan. RIB at 5. ASUSTek Computer, Inc. designs and sells, among other things, personal computers containing Intel processors. See id. at 7. Respondent ASUS Computer International is a corporation organized and existing under the laws of California and having a principal place of business in Freemont, California. Id. at 5. ASUS Computer International is a subsidiary of ASUSTek Computer, Inc. (together, “ASUS”). Id. Respondent Lenovo Group Ltd. is a foreign corporation organized and existing under the laws of China and having a principal place of business in Beijing, China. RIB at 6. Lenovo Group Ltd. designs and sells, among other things, personal computers containing Intel processors. See id. at 7. Respondent Lenovo (United States) Inc. is a corporation organized and existing under the laws of Delaware and having a principal place of business in Morrisville, North Carolina. Id. at 6. Lenovo (United States) Inc. is an “indirect subsidiary” of Lenovo Group Ltd. (together, “Lenovo”). Id. Respondent Micro-Star International Co., Ltd. is a foreign corporation organized and existing under the laws of Taiwan and having a principal place of business in New Taipei City 235, Taiwan. RIB at 6. Micro-Star International Co., Ltd. designs and sells, among other things, personal computers containing Intel processors. See id. at 7. Respondent MSI Computer Corp. is a corporation organized and existing under the laws of California and having a principal place of business in City of Industry, California. Id. at 6. MSI Computer Corp. is a subsidiary of Micro- Star International Co., Ltd. (together, “MSI”). Id.
5 C. The Asserted Patents and Claims The Asserted Patents relate to semiconductor chips with gate structures and other feature layers arranged in a grid. The following claims are at issue in this investigation: Asserted Patent Infringement Claims Domestic Industry Claims 10.141,334 1, 2, 5, 15 29, 30 10,186,523 1-11, 14-20, 25, 26 27, 28 See CIB at 11, 66, 101, 135. 1 The 334 patent is entitled, “Semiconductor Chip Including Region having Rectangular- Shaped Gate Structures and First-Metal Structures.” JX-0003 (also cited herein as “334 patent”). The application leading to the 334 patent was filed on August 28, 2017, and claims priority, through a series of intervening continuation applications, to a provisional application, 60/781,288, filed on March 9, 2006. Id. The 334 patent issued on November 27, 2018. Id. The 523 patent is entitled, “Semiconductor Chip having Region including Gate Electrode Features Formed in part from Rectangular Layout Shapes on Gate Horizontal Grid and First-Metal Structures Formed in part from Rectangular Layout Shapes on at Least Eight First-Metal Gridlines of First-Metal Vertical Grid.” JX-0005 (also cited herein as “523 patent”). The application leading to the 523 patent was filed on August 31, 2018, and claims priority, through a series of intervening continuation applications, to a provisional application, 60/781,288, filed on March 9, 2006. Id. The 523 patent issued on January 22, 2019. By way of background, a semiconductor is a material that has electrical conductivity properties falling between that of a conductor and an insulator. Joint Technology Tutorial, EDIS 1 Tela does not identify claim 25 as infringed, but it is implicated by asserted dependent claim 26.
6 Doc. ID 680838 at 2 (“JTT”). These conductive properties may be changed with the addition of impurities. Id. at 6. The addition of different types of impurities results in two different types of semiconductor, known as p-type and n-type. Id. P-type and n-type semiconductors can be used with other materials to construct transistors. JTT at 10-13. The relevant transistor here is a complementary metal oxide semiconductor, or CMOS. Id. at 11, 14. A CMOS transistor is made of four basic components: (1) a body; (2) a source region made of one type of semiconductor; (3) a drain region also made of that type of semiconductor; and (4) a gate made of metal and an oxide, where the gate oxide functions as an insulator by separating the gate metal from the other components. Id. at 10-14. The source region and the drain region together constitute the diffusion region. 523 patent at 9:35-42 (“diffusion regions 203 represent selected regions of the base substrate 201 within which impurities are introduced” and “diffusion contacts 205 are defined to enable connection between source and drain diffusion regions 203”). When a voltage is applied to the gate an electric field is formed under it, causing a conductive channel connecting the source and drain to either appear or disappear, depending on the voltage and the type of semiconductor used to form the source and drain. JTT at 10-16. As a result, current can be made to either flow or not flow from source to drain, and the transistor in effect acts as an on/off switch. Id. at 10, 13. Logic circuits using this switching effect may be formed by connecting many transistors together. See JTT at 10. A set of such circuits disposed on a semiconductor substrate is called an integrated circuit, or chip. Id. at 2. A silicon wafer is the substrate material for a CMOS chip. Id. at 17. The circuitry on a CMOS chip is formed through a multi-stage process, including layout, in which the size, shape, and spacing of the chip’s features are specified, followed by
7 photolithography. JTT at 17, 19; see Respondents’ Initial Claim Construction Brief, EDIS Doc. ID 678284, Ex. 6 at 6 (“A layout represents the size, shape, and spacing guidelines for a given layer in a transistor”). In photolithography, a material called photoresist is deposited on the wafer. JTT at 17. Photoresist undergoes chemical changes when exposed to light. Id. at 19. In one embodiment of the photolithography process, a pattern of opaque chrome material is placed on transparent quartz glass to form a photomask corresponding to at least a portion of the layout. Id. at 18. The photomask is placed over the wafer, ultraviolet light is shined through it, and the underlying photoresist chemically changes to match the photomask’s pattern. Id. Application of a solvent then removes some of the photoresist, leaving the remaining photoresist in either a positive or negative pattern (depending on the photoresist) matching that of the photomask. Id. at 18-19. Further processing can then be used to build features on the wafer; for example, in areas where photoresist has been removed, material may be added by deposition or removed by etching. See JTT at 19. Repeated application of photolithography and additional processing results in a “stack of layers” on the wafer. 523 patent at 9:14-15; see generally 523 patent at Fig. 2. Within these layers, the various features forming the integrated circuit include gates, gate electrodes, source and drain contacts, and other elements, all of which “enable . . . the desired circuit connectivity.” Id. at 9:56-57; see generally id. at 9:30-49. The density of circuitry can be increased by reducing feature size. JTT at 20. Historically, feature size has been shrinking, and in many cases features are smaller than the wavelength of the light used for photolithography. Id. Because of the small feature size, interference patterns are generated during fabrication as shapes on the photomask interact with the light. 523 patent at 4:16-
8 17. These interference patterns cause the fabricated feature shape to deviate from the designed feature shape, so much so that failure may result. Id. at 4:22-24. In particular, when “two-dimensionally varying features are located in neighboring proximity to each other, the light used to expose the features will interact in a complex and generally unpredictable manner,” and may result in, for instance, “layout feature shape distortion.” 523 patent at 7:41-44, 8:25. Although “[c]orrection methodologies” exist to solve this problem, “semiconductor product yield is reduced as a result of . . . two-dimensionally varying features disposed in proximity to each other.” Id. at 4:24, 8:17-21. The Asserted Patents claim a new such methodology focused on “topology,” or feature shape. Id. at 7:36-37. Specifically, the Asserted Patents themselves assert that “layout feature shape enhancement can be realized if the layout feature shapes are rectangular, near the same size, and are oriented in the same direction.” Id. at 9:8-9. It stands undisputed that Tela is the owner of the Asserted Patents. CIB at 155 (citing JX- 0008; JX-0010; CX-1148C at Q/A 6-9), 11 (citing JX-0003; JX-0005; JX-0013; JX-0015); see generally RIB; SIB. D. Products at Issue 1. Domestic Industry Products The domestic industry products in this investigation are integrated circuits; more specifically, 14nm Exynos computer processors, made for mobile devices. CIB at 9. These processors are made by Samsung Austin Semiconductor (“SAS”) in the United States. Tela explains how these 14nm Exynos processors are “fabricated using a version of Samsung’s 14nm process technology—LN14LPEM (14LPE), LN14LPPM (14LPP), or LN14LPCM (14LPC).” Id. at 10 (citing CX-1144C at Q/A 1618-1622, 2692-1693; CX-0033C at *9; CX-1228C at 52:12- 54:7). The particular processors made by each of these processes, and relied on by Tela for satisfaction of domestic industry, are listed below:
9 Tela’s “DI Products” Code Name Fab Part ID Brand Name 14nm Process Technology S5E7420 Exynos 7 Octa (7420) Mobile Processor 14LPE S5E8890 Exynos 8 Octa (8890) Mobile Processor 14LPP S5E8890 Exynos 8 Octa (8890) Mobile Processor 14LPP S5E7880 Exynos 7880 Mobile Processor 14LPP S5E7570 Exynos 7 Quad (7570) Mobile Processor 14LPC S5E7870 Exynos 7 Octa (7870) Mobile Processor 14LPC S5E7883 Exynos 7883 Mobile Processor 14LPC CIB at 10 (citing, inter alia, CX-0033C at *9; CX-1145C at Q/A 32-40; CX-1144C at Q/A 2619- 2629, 2692-2693); see CX-0629; CX-0630; CX-0631; CX-0632; CX-0633; CX-1230. These processors will be referred together in this initial determination as the “DI Products.” Further, Tela’s presentation of economic prong domestic industry and discussion of significant investment is based on a separate, three-tiered classification of the DI Products, to accommodate situations in which less than all of them satisfy technical prong. The tiers are as follows: Tela’s Economic Prong Groups Group 1 (7420) Group 2 Group 1 + Group 3 Group 1 + Group 2 + CIB at 160; see RIB at 172-173.
10 2. Accused Products The accused products in this investigation are integrated circuits—both CPUs and chipsets—fabricated on respondent Intel’s 14nm and 10nm manufacturing processes, and also desktops, laptops, motherboards, and other computers manufactured and sold by respondents Acer, Asus, Lenovo, and MSI containing those integrated circuits. CIB at 8-9. The individual part and model numbers are too numerous to reproduce here but are listed in demonstratives to Tela’s expert’s testimony and attached to this initial determination as Appendix A. CX-1144C at Q/A 7- 11; CDX-0003; CDX-0004; CDX-0005; CDX-0006; CDX-0007. All of the products listed in these demonstratives will be referred to in this initial determination as the “Accused Products”; while the 14nm products listed in CDX-0003 from respondent Intel will be referred to as the “Intel 14nm Products” and the 10nm products will be referred to as the “Intel 10nm Products.” Further, Tela’s expert, Dr. Foty, and Respondents’ expert, Dr. Subramanian, have provided demonstratives associating subsets of the Intel 14nm Products and Intel 10nm Products with certain “cells” used in Tela’s infringement case. These subsets, along with their associated cells, are listed below: Intel 14nm Products Product Family/Architecture Associated Cells Broadwell; Sky Lake; Kaby Lake; Coffee Lake Cascade Lake Goldmont; Goldmont Plus
11 Ice Lake Chipset; Cannon Lake Chipset Intel 10nm Products Product Family/Architecture Associated Cells Ice Lake; Cannon Lake See CDX-0012C at *25-26; RDX-0016C at *37-39. II. STANDARDS OF LAW A. Standing Commission Rule 210.12 states in relevant part “[f]or every intellectual property based complaint (regardless of the type of intellectual property involved), [the complaint must] include a showing that at least one complainant is the owner or exclusive licensee of the subject intellectual property.” 19 C.F.R. § 210.12(a)(7). In determining whether this rule is met, the Commission looks to the standing requirement used by courts in patent infringement cases. Certain Audio Processing Hardware, Software, and Products Containing the Same, Inv. No. 337-TA-1026, Comm’n Op. at 9 (April 18, 2018) (citations omitted). B. Claim Construction “The construction of claims is simply a way of elaborating the normally terse claim language in order to understand and explain, but not to change, the scope of the claims.” Embrex, Inc. v. Serv. Eng'g Corp., 216 F.3d 1343, 1347 (Fed. Cir. 2000). Although most of the disputed
12 claim terms were construed in an earlier order, some of the issues presented below are only resolvable with additional claim construction. Claim construction focuses on the intrinsic evidence, which consists of the claims themselves, the specification, and the prosecution history. See Phillips v. AWH Corp., 415 F.3d 1303, 1314 (Fed. Cir. 2005) (en banc); see also Markman v. Westview Instr., Inc., 52 F.3d 967, 979 (Fed. Cir. 1995) (en banc). As the Federal Circuit in Phillips explained, courts must analyze each of these components to determine the “ordinary and customary meaning of a claim term” as understood by a person of ordinary skill in art at the time of the invention. 415 F.3d at 1313. “Such intrinsic evidence is the most significant source of the legally operative meaning of disputed claim language.” Bell Atl. Network Servs., Inc. v. Covad Commc'ns Grp., Inc., 262 F.3d 1258, 1267 (Fed. Cir. 2001). “It is a ‘bedrock principle’ of patent law that ‘the claims of a patent define the invention to which the patentee is entitled the right to exclude.”’ Phillips, 415 F.3d at 1312 (quoting Innova/Pure Water, Inc. v. Safari Water Filtration Sys., Inc., 381 F.3d 1111, 1115 (Fed. Cir. 2004)). “Quite apart from the written description and the prosecution history, the claims themselves provide substantial guidance as to the meaning of particular claims terms.” Id. at 1314; see Interactive Gift Express, Inc. v. Compuserve Inc., 256 F.3d 1323, 1331 (Fed. Cir. 2001) (“In construing claims, the analytical focus must begin and remain centered on the language of the claims themselves, for it is that language that the patentee chose to use to ‘particularly point [ ] out and distinctly claim [ ] the subject matter which the patentee regards as his invention.”). The context in which a term is used in an asserted claim can be “highly instructive.” Phillips, 415 F.3d at 1314. Additionally, other claims in the same patent, asserted or unasserted, may also provide guidance as to the meaning of a claim term. Id. “Courts do not rewrite claims; instead, we give
13 effect to the terms chosen by the patentee.” K-2 Corp. v. Salomon S.A., 191 F.3d 1356, 1364 (Fed. Cir. 1999). “[T]he specification ‘is always highly relevant to the claim construction analysis. Usually it is dispositive; it is the single best guide to the meaning of a disputed term.’” Phillips, 415 F.3d at 1315 (quoting Vitronics Corp. v. Conceptronic, Inc., 90 F.3d 1576, 1582 (Fed. Cir. 1996)). “[T]he specification may reveal a special definition given to a claim term by the patentee that differs from the meaning it would otherwise possess. In such cases, the inventor’s lexicography governs.” Id. at 1316. In addition to the claims and the specification, the prosecution history should be examined, if in evidence. Phillips, 415 F.3d at 1317; see Liebel-Flarsheim Co. v. Medrad, Inc., 358 F.3d 898, 913 (Fed. Cir. 2004). The prosecution history can “often inform the meaning of the claim language by demonstrating how the inventor understood the invention and whether the inventor limited the invention in the course of prosecution, making the claim scope narrower than it would otherwise be.” Phillips, 415 F.3d at 1317; see Chimie v. PPG Indus. Inc., 402 F.3d 1371, 1384 (Fed. Cir. 2005) (“The purpose of consulting the prosecution history in construing a claim is to exclude any interpretation that was disclaimed during prosecution.”). When the intrinsic evidence does not establish the meaning of a claim, then extrinsic evidence (i.e., all evidence external to the patent and the prosecution history, including dictionaries, inventor testimony, expert testimony, and learned treatises) may be considered. Phillips, 415 F.3d at 1317. Extrinsic evidence is generally viewed as less reliable than the patent itself and its prosecution history in determining how to define claim terms. Id. “The court may receive extrinsic evidence to educate itself about the invention and the relevant technology, but the court may not use extrinsic evidence to arrive at a claim construction that is clearly at odds with
14 the construction mandated by the intrinsic evidence.” Elkay Mfg. Co. v. Ebco Mfg. Co., 192 F.3d 973, 977 (Fed. Cir. 1999). The construction of a claim term is generally guided by its ordinary meaning. However, courts may deviate from the ordinary meaning when: (1) “the intrinsic evidence shows that the patentee distinguished that term from prior art on the basis of a particular embodiment, expressly disclaimed subject matter, or described a particular embodiment as important to the invention;” or (2) “the patentee acted as his own lexicographer and clearly set forth a definition of the disputed claim term in either the specification or prosecution history.” Edwards Lifesciences LLC v. Cook Inc., 582 F.3d 1322, 1329 (Fed. Cir. 2009); see GE Lighting Sols., LLC v. AgiLight, Inc., 750 F.3d 1304, 1309 (Fed. Cir. 2014) (“the specification and prosecution history only compel departure from the plain meaning in two instances: lexicography and disavowal.”); Omega Eng’g, Inc, v. Raytek Corp., 334 F.3d 1314, 1324 (Fed. Cir. 2003) (“[W]here the patentee has unequivocally disavowed a certain meaning to obtain his patent, the doctrine of prosecution disclaimer attaches and narrows the ordinary meaning of the claim congruent with the scope of the surrender.”); Rheox, Inc. v. Entact, Inc., 276 F.3d 1319, 1325 (Fed. Cir. 2002) (“The prosecution history limits the interpretation of claim terms so as to exclude any interpretation that was disclaimed during prosecution.”). Nevertheless, there is a “heavy presumption that a claim term carries its ordinary and customary meaning.” CCS Fitness, Inc. v. Brunswick Corp., 288 F.3d 1359, 1366 (Fed. Cir. 2002) (citations omitted). The standard for deviating from the plain and ordinary meaning is “exacting” and requires “a clear and unmistakable disclaimer.” Thorner v. Sony Computer Entm’t Am. LLC, 669 F.3d 1362, 1366-67 (Fed. Cir. 2012); see Epistar Corp. v. Int’l Trade Comm’n, 566 F.3d 1321, 1334 (Fed. Cir. 2009) (requiring “expressions of manifest exclusion or restriction,
15 representing a clear disavowal of claim scope” to deviate from the ordinary meaning) (citation omitted). C. Infringement “An infringement analysis entails two steps. The first step is determining the meaning and scope of the patent claims asserted to be infringed. The second step is comparing the properly construed claims to the device accused of infringing.” Markman, 52 F.3d at 976. A patentee may prove infringement either literally or under the doctrine of equivalents. Infringement of either sort must be proven by a preponderance of the evidence. SmithKline Diagnostics, Inc. v. Helena Labs. Corp., 859 F.2d 878, 889 (Fed. Cir. 1988). A preponderance of the evidence standard “requires proving that infringement was more likely than not to have occurred.” Warner-Lambert Co. v. Teva Pharm. USA, Inc., 418 F.3d 1326, 1341 n.15 (Fed. Cir. 2005). Literal infringement, a form of direct infringement, is a question of fact. Finisar Corp. v. DirecTV Group, Inc., 523 F.3d 1323, 1332 (Fed. Cir. 2008). “To establish literal infringement, every limitation set forth in a claim must be found in an accused product, exactly.” Microsoft Corp. v. GeoTag, Inc., 817 F.3d 1305, 1313 (Fed. Cir. 2016) (quoting Southwall Techs., Inc. v. Cardinal IG Co., 54 F.3d 1570, 1575 (Fed. Cir. 1995). If any claim limitation is absent, there is no literal infringement of that claim as a matter of law. Bayer AG v. Elan Pharm. Research Corp., 212 F.3d 1241, 1247 (Fed. Cir. 2000). Doctrine of equivalents is also a form of direct infringement. One rubric for evaluating if a claimed feature is not literally, but nonetheless equivalent to, a claimed feature is known as the function-way-result test. Under this test, the accused feature is equivalent to the claim limitation when “it performs substantially the same function in substantially the same way to obtain the same
16 result.” Duncan Parking Techs., Inc. v. IPS Grp., Inc., 914 F.3d 1347, 1362 (Fed. Cir. 2019) (quoting Graver Tank & Mfg. Co. v. Linde Air Prods. Co., 339 U.S. 605, 608 (1950)). Another test is known as the insubstantial differences test, where “[a]n element in the accused device is equivalent to a claim limitation if the only differences between the two are insubstantial.” Voda v. Gordia Corp., 536 F.3d 1311, 1139 (Fed. Cir. 2008). The Supreme Court has further instructed, “the proper time for evaluating equivalency . . . is at the time of infringement, not at the time the patent was issued.” Warner-Jenkinson Co., Inc. v. Hilton Davis Chem. Co., 520 U.S. 17, 37 (1997). D. Domestic Industry In an investigation based on a claim of patent infringement, Section 337 requires that an industry in the United States, relating to the articles protected by the patent, exist or be in the process of being established. 19 U.S.C. § 1337(a)(2). Under Commission precedent, the domestic industry requirement has been divided into (i) a “technical prong” (which requires articles covered by the asserted patent) and (ii) an “economic prong” (which requires certain levels of activity with respect to the protected articles or patent itself). See Certain Video Game Systems and Controllers, Inv. No. 337-TA-743, Comm’n Op. at 6-7 (April 14, 2011) (“Video Game Systems”). 1. Technical Prong The technical prong of the domestic industry requirement is satisfied when the complainant in a patent-based section 337 investigation establishes that it is practicing or exploiting the patents at issue. See 19 U.S.C. §§ 1337 (a)(2), (3); Certain Microsphere Adhesives, Process for Making Same and Prods. Containing Same, Including Self-Stick Repositionable Notes, Inv. No. 337-TA- 366, Comm’n Op. at 8 (U.S.I.T.C. Jan. 16, 1996). “In order to satisfy the technical prong of the domestic industry requirement, it is sufficient to show that the domestic industry practices any claim of that patent, not necessarily an asserted claim of that patent.” Certain Ammonium
17 Octamolybdate Isomers, Inv. No. 337-TA-477, Comm’n Op. at 55 (U.S.I.T.C. Aug. 28, 2003). Historically, the Commission permits the complainant’s products, and those of its licensees, to be considered for technical prong purposes. See Certain Magnetic Tape Cartridges and Components Thereof, Inv. No. 337-TA-1058, Comm’n Op. at 28-29 (April 9, 2019). The test for claim coverage for the purposes of the technical prong of the domestic industry requirement is the same as that for infringement. See Certain Doxorubicin and Preparations Containing Same, Inv. No. 337-TA-300, Initial Determination at 109 (U.S.I.T.C. May 21, 1990), aff’d, Views of the Commission at 22 (U.S.I.T.C. Oct. 31, 1990); Alloc, Inc. v. Int’l Trade Comm’n, 342 F.3d 1361, 1375 (Fed. Cir. 2003). “First, the claims of the patent are construed. Second, the complainant’s article or process is examined to determine whether it falls within the scope of the claims.” Certain Doxorubicin and Preparations Containing Same, Inv. No. 337-TA-300, Initial Determination at 109. As with infringement, the technical prong of the domestic industry can be satisfied either literally or under the doctrine of equivalents. Certain Dynamic Sequential Gradient Devices and Component Parts Thereof, Inv. No. 337-TA-335, ID at 44, Pub. No. 2575 (U.S.I.T.C. May 15, 1992). In short, the patentee must establish by a preponderance of the evidence that the domestic product practices one or more claims of the patent. 2. Economic Prong The “economic prong” of the domestic industry requirement is satisfied when there exists in the United States, in connection with products practicing at least one claim of the patent at issue: (A) significant investment in plant and equipment; (B) significant employment of labor or capital; or (C) substantial investment in its exploitation, including engineering, research and development, and licensing. 19 U.S.C. § 1337(a)(3). Establishment of the “economic prong” is not dependent on any “minimum monetary expenditure” and there is no need for complainant “to define the industry itself in absolute mathematical terms.” Certain Stringed Musical Instruments and
18 Components Thereof, Inv. No. 337-TA-586, Comm’n Op. at 25-26 (May 16, 2008) (“Stringed Instruments”). However, a complainant must substantiate the significance of its activities with respect to the articles protected by the patent. Certain Printing and Imaging Devices and Components Thereof, Inv. No. 337-TA-690, Comm’n Op. at 30 (Feb. 17, 2011) (“Imaging Devices”). Further, a complainant can show that its activities are significant by showing how those activities are important to the articles protected by the patent in the context of the company’s operations, the marketplace, or the industry in question. Id. at 27-28. That significance, however, must be shown in a quantitative context. Lelo Inc. v. Int’l Trade Comm’n, 786 F.3d 879, 886 (Fed. Cir. 2015). The Federal Circuit noted that when the ITC first addressed this requirement, it found the word “‘significant’ denoted ‘an assessment of the relative importance of the domestic activities.’” Id. at 883-4 (internal citation omitted) (emphasis added). In general, “[t]he purpose of the domestic industry requirement is to prevent the ITC from becoming a forum for resolving disputes brought by foreign complainants whose only connection with the United States is ownership of a U.S. patent.” Certain Battery-Powered Ride-On Toy Vehicles, Inv. No. 337-TA- 314, USITC Pub. No. 2420, Initial Determination at 21 (Aug. 1991). E. Invalidity 1. 35 U.S.C. § 102 Pursuant to 35 U.S.C. § 102, a patent claim is invalid as anticipated if: (a) the invention was known or used by others in this country, or patented or described in a printed publication in this or a foreign country, before the invention thereof by the applicant; (b) the invention was patented or described in a printed publication in this or a foreign country or in public use or on sale in this country, more than one year prior to the date of the application for patent in the United States; (e) the invention was described in (1) an application for patent, published under section 122(b), by another filed in the United States before the invention by the applicant for patent or (2) a patent granted on an application
19 for patent by another filed in the United States before the invention by the applicant for patent;” (g)(2) before such person’s invention thereof, the invention was made in this country by another inventor who had not abandoned, suppressed, or concealed it. 35 U.S.C. § 102 (pre-AIA). “A patent is invalid for anticipation if a single prior art reference discloses each and every limitation of the claimed invention. Moreover, a prior art reference may anticipate without disclosing a feature of the claimed invention if that missing characteristic is necessarily present, or inherent, in the single anticipating reference.” Schering Corp. v. Geneva Pharm., Inc., 339 F.3d 1373, 1377 (Fed. Cir. 2003) (citations omitted); see Santarus, Inc. v. Par Pharm., Inc., 694 F.3d 1344, 1354 (Fed. Cir. 2012). “A century-old axiom of patent law holds that a product ‘which would literally infringe if later in time anticipates if earlier.’” Upsher-Smith Labs., Inc. v. Pamlab, L.L.C., 412 F.3d 1319, 1322 (Fed. Cir. 2005) (citing Schering Corp., 339 F.3d at 1322). 2. 35 U.S.C. § 103 Section 103 of the Patent Act states: A patent may not be obtained though the invention is not identically disclosed or described as set forth in section 102 of this title, if the differences between the subject matter sought to be patented and the prior art are such that the subject matter as a whole would have been obvious at the time the invention was made to a person having ordinary skill in the art to which said subject matter pertains. Patentability shall not be negated by the manner in which the invention was made. 35 U.S.C. § 103(a) (pre-AIA). “Obviousness is a question of law based on underlying questions of fact.” Scanner Techs. Corp. v. ICOS Vision Sys. Corp. N.V., 528 F.3d 1365, 1379 (Fed. Cir. 2008). The underlying factual determinations include: “(1) the scope and content of the prior art, (2) the level of ordinary skill in the art, (3) the differences between the claimed invention and the prior art, and (4) objective indicia of non-obviousness.” Id. (citing Graham v. John Deere Co. of
20 Kansas City, 383 U.S. 1, 17-18 (1966)). These factual determinations are often referred to as the “Graham factors.” The critical inquiry in determining the differences between the claimed invention and the prior art is whether there is a reason to combine the prior art references. KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398, 418-21 (2007). In KSR, the Supreme Court rejected the Federal Circuit’s rigid application of the teaching-suggestion-motivation test. While the Court stated that “it can be important to identify a reason that would have prompted a person of ordinary skill in the relevant field to combine the elements in the way the claimed new invention does,” it described a more flexible analysis: Often, it will be necessary for a court to look to interrelated teachings of multiple patents; the effects of demands known to the design community or present in the marketplace; and the background knowledge possessed by a person having ordinary skill in the art, all in order to determine whether there was an apparent reason to combine the known elements in the fashion claimed by the patent at issue . . . . As our precedents make clear, however, the analysis need not seek out precise teachings directed to the specific subject matter of the challenged claim, for a court can take account of the inferences and creative steps that a person of ordinary skill in the art would employ. Id. at 418. Since KSR, the Federal Circuit has announced that, where a patent challenger contends that a patent is invalid for obviousness based on a combination of prior art references, “the burden falls on the patent challenger to show by clear and convincing evidence that a person of ordinary skill in the art would have had reason to attempt to make the composition or device . . . and would have had a reasonable expectation of success in doing so.” PharmaStem Therapeutics, Inc. v. ViaCell, Inc., 491 F.3d 1342, 1360 (Fed. Cir. 2007); see KSR, 550 U.S. at 399 (“The proper question was whether a pedal designer of ordinary skill in the art, facing the wide range of needs created by developments in the field, would have seen an obvious benefit to upgrading Asano with a sensor.”).
21 In addition to demonstrating that a reason exists to combine prior art references, the challenger must demonstrate that the combination of prior art references discloses all of the limitations of the claims. Hearing Components, Inc. v. Shure Inc., 600 F.3d 1357, 1373-4 (Fed. Cir. 2010) (abrogated on other grounds by Nautilus, Inc. v. Biosig Instruments, Inc., 134 S.Ct. 2120 (2014)) (upholding finding of non-obviousness based on the fact that there was substantial evidence that the asserted combination of references failed to disclose a claim limitation); Velander v. Garner, 348 F.3d 1359, 1363 (Fed. Cir. 2003) (explaining that a requirement for a finding of obviousness is that “all the elements of an invention are found in a combination of prior art references”). An obviousness determination should also include a consideration of “secondary considerations” such as “commercial success, long felt but unsolved needs, failure of others, etc., might be utilized to give light to the circumstances surrounding the origin of the subject matter sought to be patented.” Graham, 338 U.S. at 17-18. “For [such] objective evidence to be accorded substantial weight, its proponent must establish a nexus between the evidence and the merits of the claimed invention.” In re GPAC Inc., 57 F.3d 1573, 1580 (Fed. Cir. 1995); see Merck & Cie v. Gnosis S.P.A., 808 F.3d 829, 837 (Fed. Cir. 2015). “Where the offered secondary consideration actually results from something other than what is both claimed and novel in the claim, there is no nexus to the merits of the claimed invention.” In re Huai-Hung Kao, 639 F.3d 1057, 1068 (Fed. Cir. 2011). 3. 35 U.S.C. § 112 Pursuant to 35 U.S.C. § 112, a patent claim is invalid for lack of written description if the patent’s specification fails to “reasonably convey[] to those skilled in the art that the inventor had possession of the claimed subject matter as of the filing date.” Ariad Pharm., Inc. v. Eli Lilly & Co., 598 F.3d 1336, 1351 (Fed. Cir. 2010) (en banc). “[T]he test requires an objective inquiry into
22 the four corners of the specification from the perspective of a person of ordinary skilled in the art” (id.), and “the level of detail required to satisfy the written description requirement varies depending on the nature and scope of the claims and on the complexity and predictability of the relevant technology” (id. (citing Capon v. Eshar, 418 F.3d 1349, 1357-58 (Fed. Cir. 2005))). Additionally, under 35 U.S.C. § 112, a patent claim is invalid for indefiniteness if “its claims, read in light of the specification delineating the patent, and the prosecution history, fail to inform, with reasonable certainty, those skilled in the art about the scope of the invention.” Nautilus, 134 S. Ct. at 2124. Indefiniteness can result from a single claim covering both an apparatus and a method of use of that apparatus, as “a manufacturer or seller of the claimed apparatus would not know from the claim whether it might also be liable for contributory infringement because a buyer or user of the apparatus later performs the claimed method using the apparatus.” IPXL Holdings v. Amazon.com, 430 F.3d 1377, 1384 (Fed. Cir. 2005); see UltimatePointer, L.L.C. v. Nintendo Co., 816 F.3d 816, 826 (Fed. Cir. 2016) (holding these types of claims may make it “unclear whether infringement . . . occurs when one creates an infringing system, or whether infringement occurs when the user actually uses the system in an infringing manner”) (citation omitted). “[A]pparatus claims are not necessarily indefinite for using functional language,” however, as in, for example, means-plus-function formatted claims. MasterMine Software, Inc. v. Microsoft Corp., 874 F.3d 1307, 1313 (Fed. Cir. 2017) (citing Microprocessor Enhancement Corp. v. Tex. Instruments Inc., 520 F.3d 1367, 1375 (Fed. Cir. 2008)). Another example may be when the claim merely recites “that the system ‘possesses the recited structure which is capable of performing the recited functions.’” Id. at 1315-16 (quoting Microprocessor Enhancement, 520 F.3d at 1375). Overall, “the written description is key to determining whether a term of degree is indefinite.” Guangdong Alison Hi-Tech Co. v. Int’l Trade Comm’n, 936 F.3d
23 1353, 1361 (Fed. Cir. 2019) (citing Sonix Tech. Co. v. Publ’ns Int’l, Ltd., 844 F.3d 1370, 1378 (Fed. Cir. 2017)) (emphasis in original). Further, under 35 U.S.C. § 112, a patent specification must contain a description “of the manner and process of making and using” the invention. 35 U.S.C. § 112. This is referred to as the enablement requirement, and a patent claim is sufficiently enabled only when the specification teaches “those skilled in the art how to make and use the full scope of the claimed invention without undue experimentation.” Genentech, Inc. v. Novo Nordisk, A/S, 108 F.3d 1361, 1365 (Fed. Cir. 1997). To determine whether the specification leaves a person of ordinary skill to perform undue experimentation, the Federal Circuit has identified the following factors to consider: (1) the quantity of experimentation necessary; (2) the amount of direction or guidance presented; (3) the presence or absence of working examples; (4) the nature of the invention; (5) the state of the prior art; (6) the relative skill of those in the art; (7) the predictability or unpredictability of the art; and (8) the breadth of the claims. In re Wands, 585 F.2d 731, 737 (Fed. Cir. 1988). “[I]t is not necessary that a court review all the Wands factors to find a disclosure enabling. They are illustrative, not mandatory.” Amgen, Inc. v. Chugai Pharm. Co., Ltd., 927 F.2d 1200, 1213 (Fed. Cir. 1991). III. IMPORTATION AND JURISDICTION In its initial post-hearing brief, Tela asserts that “Respondents do not deny that they make the Accused Products over which the Commission has in rem jurisdiction.” CIB at 10. Tela notes that respondent Intel stipulated that it imports, sells for importation, and sells after importation into the United States various generations of its portion of the Accused Products (see id. at 11 (citing JX-0017C; CDX-0003C)) and argues the other respondents also import, sell for importation, or sell after importation, their respective Accused Products. Respondents do not dispute the Commission’s jurisdiction over this investigation or that the requisite importation or sales in
24 connection with importation of their respective Accused Products has taken place. See RIB at 13. Accordingly, the importation requirement under 19 U.S.C. § 1337(a)(1)(B) is satisfied, and the Commission has in rem jurisdiction over the Accused Products. IV. U.S. PATENT NO. 10,141,334 A. Level of Ordinary Skill in the Art In Order No. 34, I determined that a person having ordinary skill in the art of the 334 patent at the time of invention “would have: (1) a bachelor’s degree in electrical engineering or computer engineering with at least three years of experience in the field of semiconductor layout technology and integrated circuit design; (2) a master’s degree in electrical engineering or computer engineering with at least two years of experience in the same field; (3) a bachelor’s degree in physics or materials science with at least five years of experience in the same field; or (4) a comparable combination of education and experience.” Order No. 34 at 8. The parties do not challenge this determination (see RIB at 15; SIB at 24; see generally CIB; CRB; RRB; SRB), and it is applied throughout this initial determination. B. Claims-at-Issue Claims 1, 2, 5, 15, 29, and 30 of the 334 patent are at issue in this investigation, either through allegations of infringement or of the domestic industry technical prong. See CIB at 11, 66. These claims are reproduced below along with additional claim limitation identifiers: 1. [1a] A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, [1b] the gate structures positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline,
25 [1c] wherein each gate gridline has at least one gate structure positioned thereon, wherein each pair of gate structures that are positioned in an end- to-end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers, [1d] wherein at least one gate structure within the region is a first-transistor- type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, [1e] wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region; [1f] a first-metal layer formed above top surfaces of the gate structures within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate structures, the first-metal layer separated from the top surfaces of the gate structures by at least one insulator material, adjacent metal layers in the stack of metal layers separated by at least one insulator material, [1g] wherein the first-metal layer includes first-metal structures positioned in accordance with a first-metal vertical grid, the first-metal vertical grid including at least eight first-metal gridlines, each first-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in an x-direction in a substantially centered manner on an associated first-metal gridline, [1h] each first-metal structure in the region having at least one adjacent first- metal structure positioned next to each of its sides in accordance with a y- coordinate spacing of less than or equal to 193 nanometers, wherein each pair of first-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers; and [1i] at least six contact structures formed within the region of the semiconductor chip, wherein at least six gate structures within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six contact structures, [1j] each of the at least six contact structures having a substantially rectangular shape with a corresponding length greater than a corresponding width and with the corresponding length oriented in the x-direction, each of
26 the at least six contact structures positioned and sized to overlap both edges of the top surface of the gate structure to which it is in physical and electrical contact, [1k] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form part of a logic circuit, wherein the logic circuit includes electrical connections that collectively include first-metal structures positioned on at least five of the at least eight first-metal gridlines. 2. [2a] The semiconductor chip as recited in claim 1, wherein the region includes a second-metal layer including second-metal structures positioned in accordance with a second-metal horizontal grid, the second-metal horizontal grid including at least eight second-metal gridlines, [2b] each second-metal structure in the region having at least one adjacent second-metal structure positioned next to each of its sides in accordance with an x-coordinate spacing of less than or equal to 193 nanometers, each second-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated second-metal gridline, [2c] wherein at least eight of the at least eight second-metal gridlines have at least one second-metal structure positioned thereon, wherein each pair of second-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap, [2d] wherein the second-metal layer is positioned second in the stack of metal layers counting upward from the top surfaces of the gate structures. . . . . 5. The semiconductor chip as recited in claim 2, wherein the at least six contact structures are positioned in accordance with a contact vertical grid, the contact vertical grid including contact gridlines extending in the x- direction, each of the at least six contact structures positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated contact gridline, and at least two of the at least six contact structures positioned to also extend lengthwise in the x-direction in a substantially centered manner along a corresponding first-metal gridline. . . . . 15. The semiconductor chip as recited in claim 1, wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of at least one transistor within the region of the semiconductor chip has a substantially rectangular shape.
27 . . . . 29. [29a] A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, the gate structures positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate structure positioned thereon, [29b] wherein each pair of gate structures that are positioned in an end-to- end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers, [29c] wherein at least one gate structure within the region is a first- transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, [29d] wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region; [29e] a number of contact structures formed within the region of the semiconductor chip, wherein each gate structure that forms any transistor gate electrode within the region has a respective top surface in physical and electrical contact with a corresponding contact structure having a substantially rectangular shape, wherein each contact structure that contacts a given gate structure that forms any transistor gate electrode does not contact another gate structure, wherein each contact structure having a corresponding length greater than or equal to a corresponding width is oriented to have its corresponding length extend in an x-direction, wherein each contact structure that contacts a corresponding gate structure is positioned to overlap at least one edge of the corresponding gate structure, [29f] wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of any transistor within the region has a substantially rectangular shape,
28 [29g] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, [29h] wherein the at least four transistors of the first transistor type include a first transistor of the first transistor type, wherein the at least four transistors of the second transistor type include a first transistor of the second transistor type, wherein a first gate structure forms both a gate electrode of the first transistor of the first transistor type and a gate electrode of the first transistor of the second transistor type. 30. [30a] A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, the gate structures positioned in accordance with a gate horizontal grid that includes a number of gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate structure positioned thereon, [30b] wherein each pair of gate structures that are positioned in an end-to- end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers, [30c] wherein at least one gate structure within the region is a first- transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, [30d] wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region; [30e] a number of contact structures formed within the region of the semiconductor chip, wherein each of at least six gate structures within the region has a respective top surface in physical and electrical contact with a
29 corresponding contact structure having a substantially rectangular shape, wherein each contact structure is centered in an x-direction on the gate structure with which it physical contacts, [30f] wherein each contact structure that has the substantially rectangular shape has a corresponding length greater than or equal to a corresponding width and is oriented to have its corresponding length extend in an x- direction, wherein each corresponding contact structure is in physical contact with only one gate structure, wherein each corresponding contact structure is positioned to overlap at least one edge of the gate structure contacted by the corresponding contact structure, [30g] wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of any transistor within the region has a substantially rectangular shape, [30h] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, [30i] wherein both a gate electrode of a transistor of a first transistor type and a gate electrode of a transistor of a second transistor type are formed by a same gate structure within the region. See 334 patent at cls. 1, 2, 5, 15, 29, 30 (annotated). C. Claim Construction As part of the Markman process, the following terms of the 334 patent were construed, either as agreed between the parties or as determined by Order No. 34: Claim Term Construction “gate electrode” “that portion of a gate electrode feature that forms a transistor gate” “gate electrode feature(s)” / “gate structure(s)” “a feature comprising a transistor gate” “diffusion region(s)” “selected portions of the substrate within which impurities have been introduced to form the source or drain of a transistor”
30 “[gate horizontal / first-metal vertical grid]; [second-metal horizontal] grid; [contact vertical] grid; [third-metal vertical] grid; [diffusion contact] grid” “projected gridlines used at least during the fabrication stage of integrated circuit manufacturing” “[gate / metal / contact] gridline(s)” “one of the lines making up a grid” “gate pitch” “center-to-center separation distance between adjacent gate features” See generally Order No. 34 at 52, 55, 56, 59, 60, 62. Notably, for the reasons expressed in Order No. 34, “contact structure(s)” and “gate contact structure(s)” were not construed. Id. at 61. The parties do not now explicitly identify these terms, or any others, as requiring construction. See RIB at 15-16; SIB at 23-24; see generally CIB; CRB; RRB; SRB. Thus, the scope of “contact structure(s)” and “gate contact structure(s)” are addressed below in the infringement and validity determinations to the extent required. D. Infringement According to Tela’s post-hearing briefing, the use, manufacture, or sale of the following Accused Products, and those computer products containing the same, are alleged to infringe the asserted claims of the 334 patent: Claims Accused Products Alleged to Infringe 1, 2, 5, 15 Intel 14nm Products 1, 2, 5, 15 Intel 10nm Products See CIB at 11. Of these claims, claim 1 is independent and claims 2, 5, and 15 depend from it. Respondents contest Tela’s claims of infringement under claims 1 and 15. See RIB at 16- 49; RRB at 3-27. The Staff contests infringement under these claims, along with claims 2 and 5.
31 See SIB at 45. For the reasons discussed below, Tela has not shown infringement by any of the Intel 10nm Products under any of the Asserted Claims. Tela has shown infringement for the Broadwell, Skylake, Kaby Lake, Coffee Lake, and Cascade Lake models of Intel 14nm Products under claims 1, 2, and 5. No Accused Products have been shown to infringe claim 15. 1. Claim 1 For reference, claim 1 of the 334 patent requires: 1. [1a] A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, [1b] the gate structures positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline, [1c] wherein each gate gridline has at least one gate structure positioned thereon, wherein each pair of gate structures that are positioned in an end- to-end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers, [1d] wherein at least one gate structure within the region is a first-transistor- type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, [1e] wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region; [1f] a first-metal layer formed above top surfaces of the gate structures within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate structures, the first-metal layer separated from the top surfaces of the gate structures by at least one insulator material, adjacent metal layers in the stack of metal layers separated by at least one insulator material,
32 [1g] wherein the first-metal layer includes first-metal structures positioned in accordance with a first-metal vertical grid, the first-metal vertical grid including at least eight first-metal gridlines, each first-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in an x-direction in a substantially centered manner on an associated first-metal gridline, [1h] each first-metal structure in the region having at least one adjacent first- metal structure positioned next to each of its sides in accordance with a y- coordinate spacing of less than or equal to 193 nanometers, wherein each pair of first-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers; and [1i] at least six contact structures formed within the region of the semiconductor chip, wherein at least six gate structures within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six contact structures, [1j] each of the at least six contact structures having a substantially rectangular shape with a corresponding length greater than a corresponding width and with the corresponding length oriented in the x-direction, each of the at least six contact structures positioned and sized to overlap both edges of the top surface of the gate structure to which it is in physical and electrical contact, [1k] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form part of a logic circuit, wherein the logic circuit includes electrical connections that collectively include first-metal structures positioned on at least five of the at least eight first-metal gridlines. 334 patent at cl. 1 (annotated). Several disputes exist between the parties concerning whether Tela has sufficiently shown the Accused Products meet various limitations of the claim. These are addressed below. In view of the testimony of Dr. Foty that the Accused Products meet those remaining limitations which are not in dispute, the Accused Products have been shown to meet them as alleged. See CX-1144C at Q/A 1460-1648, 2395-2525 2 ; CIB at 11-52. 2 Starting at Q/A 1853, the question and answer numbering of Dr. Foty’s witness statement (CX-1144C) becomes disjointed, and then again at Q/A 2549, and then again at Q/A 2606. Out of an abundance of caution, citations in this initial determination to a particular numbered question
33 a. Gate structures positioned in accordance with a gate horizontal grid First, Respondents and Staff dispute that “gate structures positioned in accordance with a gate horizontal grid” is met in the Intel 14nm Products and the Intel 10nm Products. RIB at 16- 19, 46; SIB at 27-32. Order No. 34 construed “grid” as it is used in this limitation as “projected gridlines used at least during the fabrication stage of integrated circuit manufacturing.” Order No. 34 at 59. Tela contends, generally, that the limitation is met in the Accused Products because Intel utilizes a “1-D gridded approach” with “relevant layouts for the accused 14nm and 10nm Intel products [that] specify the size, shape, and spacing of gate structures so that those gate structures, when formed, have a substantially rectangular shape and are positioned in accordance with a gate horizontal grid as claimed” and “the claimed gate horizontal grid is, in fact, used (or ‘projected’) during manufacturing of the Intel 14nm and 10nm products pursuant to the ALJ’s construction.” See CIB at 12-13. Specifically, Tela argues “projected” in this construction “merely means that the grid is used to define the position of various features during the fabrication stage ‘with no limitation on how that is achieved.’” Id. (citing Order No. 34 at 58; 334 patent at 30:4-5; 523 patent at 11:18-19). For both the Intel 14nm Products and the Intel 10nm Products, Tela argues that one fabrication step involves “ ” Id. at 15 (citing CX-1144C at Q/A 390-391; CPX- 0410C; JX-0210C at *87), 19 (citing CX-1144C at Q/A 414-419, 427; CPX-0030C). In its reply brief, Tela explains: and answer should be interpreted to apply to both the question bearing that number and the answer bearing that number.
34 Intel uses the gate grid in these further processing steps by (CX-1144C (Foty) at Q/A 417- 418; RX-0008C (Auth) at Q/A 103-105; Tr. (Auth) at 686:2-690:8 752:2-753:10 The fact that one step of the fabrication stage allegedly does not use the grid does not preclude infringement, particularly where other parts of the fabrication stage do. See Tate Access Floors v. Maxcess Techs., 222 F.3d 958, 970 (Fed. Cir. 2000) (“[O]ne cannot avoid infringement merely by adding elements if each element recited in the claims is found in in the accused device.”).) CRB at 4. Tela provides the following SEM image of an Intel 14nm Product as evidencing the “grid”: JX-0210C at *87; see CIB at 16. Intel asserts “[a] simple, visual inspection of the layouts and resulting semiconductor shows that these features are formed along gridlines.” CRB at 2 (citing JX-210C at *87).
35 Tela views Respondents’ expert, Dr. Subramanian, as “tacitly admit[ing]” the “structures positioned in accordance with a gate horizontal grid” aspect of the limitation is met (CIB at 13 (citing Hr’g Tr. at 876:3-877:8)), although he also contends that “use of the word ‘projected’ changes that ordinary meaning and the scope of the claims”—an opinion Tela urges should be rejected as contrary to basic principles of claim construction (id.). Tela contends “[n]othing in the ALJ’s construction of ‘grid’ requires a lithographic projection of gridlines [during fabrication].” CRB at 2 (citing Order No. 34 at 57), 4. Respondents contend the limitation is not met in the Intel 14nm Products because “Tela’s expert, Dr. Foty, offered no opinion in his witness statement or at the hearing regarding how any alleged gate grid is used during fabrication.” RIB at 16. Respondents specify that “the ALJ’s construction of ‘grid’ is not directed to lines arbitrarily drawn after the fact on layout files or the final chip. For the ’334 patent the grid must be used during fabrication.” Id. at 16-17 (emphasis in original). This is not done in either the Intel 14nm Products or Intel 10nm Products, Respondents argue, because “[a]ll the evidence in the record of projection during fabrication comes in the context of lithography . . . [yet] in 14nm and 10nm process nodes. See id. at 17 (citing Hr’g Tr. at 424:19-425:9, 881:13-882:3; RX-0014C at Q/A 200-203, 299-303, 346-353; RX-0008C at Q/A 106, 110), 18 (citing RX-0008C at Q/A 119; RX-0012C at Q/A 18), 46 (citing RX-0014C at Q/A 408, 388-393); RRB at 4 (citing RX-0008C at Q/A101-107; RX-0014C at Q/A 300, 356-357; Hr’g Tr. at 283:14-284:3). Respondents add, “Tela also does not dispute that during fabrication, the centerlines of the gates are determined not according to any pre-existing grid, but by ” RRB at 3 (citing Hr’g Tr. at 283:14- 284:3).
36 Further, while lithography is used by Intel to form the structures, Respondents explain these are “not the gates themselves [but] that actually form the gate shapes.” Id. at 17 (citing RX-0014C at Q/A 309-310; RDX-0016C at *149). Respondents claim it is undisputed these do not fall along the alleged “gate gridlines.” Id. at 18 (citing RX-0014C at Q/A 405-410). Regardless, Respondents caution that in discussing these structures, Tela is attempting to contravene Order No. 42—an order denying Respondents’ motion in limine but issued with the understanding that Tela would not be presenting an infringement case which treated the structures as the “grid” in the 334 patent. RRB at 5-6 (citing, inter alia, Order No. 42 at 2). The Staff agrees with Respondents’ positions on this limitation. See SIB at 29 (“Tela improperly vies the claimed ‘grid’ as only requiring similar end result structure/functionality for the ‘gate structures,’ thereby contradicting the ALJ’s claim construction of ‘grid,’ which requires a specific process limitation.”), 31 (“Intel uses a new technique known as but not the gates themselves. . . . it is undisputed that these shapes do not fall along the alleged ‘gate gridlines’ or otherwise correspond to the supposed ‘gate grid.’”); see generally SIB at 27-32; SRB at 4-8. This limitation is met in the Accused Products. In short, Respondents’ and Staff’s position is based in the “projected” portion of Order No. 34’s construction—“projected gridlines used at least during the fabrication stage of integrated circuit manufacturing”—and sees the absence of an actual, observable, emission of light (or other energy/substance) in the fabrication of the Accused Products as grounds for non-infringement. See, e.g., Hr’g Tr. at 876:20-877:1 (“With respect to
37 the gate, I have not offered an opinion for non-infringement, with respect to the gridlines, for the purposes of the design rule analysis. However, I have offered the opinion that it is clear that there is no use of gate gridlines consistent with the claims with respect to the projection requirements associated therewith.”), 878:2-23 (“With respect to the second part of the answer, where I was referring to fabrication, it would be you actually have a gate gridline projected during the fabrication process. So for example, if you’re talking about lithography, I would expect gridlines to be lithographically projected. And that is not the case in the accused products.”). This is not the meaning of the ordered construction: “[i]n short, the claims (as opposed to the specification) do not require projection of a ‘grid’ and do not require such projection to be either virtual or actual.” Order No. 34 at 58. Further, as explained, the term “projected” was only put into the ordered construction because all parties incorporated it into their respective proposed constructions, and the term did appear at least once in the shared specification of the Asserted Patents. See id. at 56 (citing 523 patent at 11:18-19). The clearest use of the term “projected” in the specification refers to “grid” in a virtual, or conceptual, sense: FIG. 3A is an illustration showing an exemplary base grid to be projected onto the dynamic array to facilitate definition of the restricted topology, in accordance with one embodiment of the present invention. The base grid can be used to facilitate parallel placement of the linear-shaped features in each layer of the dynamic array at the appropriate optimized pitch. Although not physically defined as part of the dynamic array, the base grid can be considered as a projection on each layer of the dynamic array. Also, it should be understood that the base grid is projected in a substantially consistent manner with respect to position on each layer of the dynamic array, thus facilitating accurate feature stacking and alignment. 334 patent at 13:1-13. Notably, there is no mention in either patent of what kind of equipment, or when in the tightly controlled fabrication process, an actual, observable emission of a grid would occur, or that it would even facilitate the act of positioning gate structures. See generally 334
38 patent; 523 patent. Obviously, the Accused Products and the like are not handmade, where projections of light would be used as guides for a human operator and their work tool. Additionally, the patent discusses “defin[ing]” the grid with consideration for light interaction effects (effects that can be mathematically characterized by a “sinc function”) such that “the spacing between gridpoints enables alignment of peaks in the sinc functions describing the light energy projected upon neighboring gridpoints.” 334 patent at 13:33-45. Yet there is no discussion of how the light from a “projected” grid—if any—is also taken into account. In sum, the specification does not support interpreting the “grid” as an actual, observable projection of light. Despite this, Respondents suggest that in a plain and ordinary sense—and for those skilled in the art—actual, observable projections of grids are used in “various” ways in processor fabrication, but that Intel simply does not use those techniques. Respondents state: Indeed, the unrebutted fact testimony of Intel witnesses is that Intel does not project any gridlines during fabrication. RX-0008C (Auth) at Q/A 119; RX- 0012C (Kelleher) at Q/A 18. Dr. Subramanian likewise testified that projected gridlines can be used during fabrication in various ways, but that Intel’s fabrication process does not use those techniques. RX-0014C (Subramanian) at Q/A 192-197; Tr. (Subramanian) at 881:13-882:3 (“I am interpreting projected for use during fabrication to simply mean that there are gridlines that are available, and are actually used during fabrication. And that is not the case.”). RIB at 18 (emphasis added). But the citation Respondents use to justify these “various” (i.e., more than one) ways is the testimony of their expert, who was asked, “[h]ow might gridlines be projected?” RX-0014C at Q/193. And Dr. Subramanian, an expert in the field (see RX-0007C at Q/A 8-14), only observed that the 523 patent “claims at column 11, lines 19-23 that ‘the base grid is projected in a substantially consistent manner with respect to position on each layer of the
39 dynamic array, thus facilitating accurate feature stacking and alignment’” (RX-0014C at Q/A 193). 3 This is far from evidence that “projected gridlines can be used during fabrication in various ways,” and the quoted intrinsic evidence (523 patent at 11:19-23) is not even a statement on “ways” in which projected gridlines are used. Rather, it is a statement on the benefits of consistent “projection”—i.e., the facilitation of accurate feature alignment within the integrated circuit’s many layers. Dr. Subramanian’s invalidity opinions reinforce the conclusion that actual, observable emissions of grids to facilitate gate placement during fabrication are not real processes. For the Intel 45nm Product prior art reference, Dr. Subramanian admits that no such projection takes place and so the limitation can only be taught if Tela’s infringement theory succeeds: Under the Court’s construction of “gate horizontal grid” and “gate gridlines,” there must be a projected grid used during the fabrication stage of integrated circuit manufacturing. There is no such grid projected during fabrication. However, under Tela’s infringement theory, any lines along which the structures corresponding to poly are defined are gridlines. Under this theory, Intel’s 45nm products’ gate structures are positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines. RX-0014C at Q/A 385. For the Becker prior art reference, however, Dr. Subramanian asserts there is an explicit disclosure of a virtual grid which satisfies Order No. 34: Becker describes at paragraphs [0050] to [0052] and [0066] that a base grid facilitates parallel placements of the features that would include the polysilicon features on 1403A to 1403G. Becker describes at paragraph [0050] that the base grid is not a physical part of the dynamic array, so a 3 Additionally, although not cited by Respondents, Dr. Subramanian’s other testimony was inconsistent regarding gridline projection. He testified “[i]f I was looking specifically at the lithographic process, for example, one way to get gridlines during a lithographic process would be to project it through the mask.” Hr’g Tr. at 881:21-24. But he also admitted this is not really something that is done: “[t]hat is not done in the accused products. And in fact, there are no ways that I am aware of, or that have been cited by Tela, that would establish that that is the case, that there are gridlines used during fabrication.” Id. at 881:24-882:3 (emphasis added).
40 POSITA would understand it is virtual. Further, Becker describes in that same paragraph that the base grid would be understood as a projection on each layer to facilitate accurate fabrication of features. For those reasons, the [] base grid satisfies the Court’s construction of “gate grid” and “gridlines.” Id. at Q/A 848. But this latter position is in conflict with his opinions on the Intel 14nm Products, Intel 10nm Products, and Intel 45nm Product, to the effect that such virtual grids do not meet the ordered construction. See RX-0014C at Q/A 837-842. And Respondents take a similar inconsistent position in connection with invalidity. See, e.g., RIB at 112-113 (stating “Tela does not dispute that Becker renders obvious each and every limitation of the ’334 patent” and “it expressly discloses all elements, except for certain claimed ranges and spacings . . . .”). In sum, the record does not support finding that “projected” gridlines need be anything more than virtual, conceptual lines which “gate structures are positioned in accordance with.” 334 patent at cl. 1. No actual, observable projections are required. In fact, Dr. Subramanian’s explanation of “projected” at the hearing is not necessarily inconsistent with this conclusion. See Hr’g Tr. at 881:13-20 (“Q. And so you’re interpreting projection to require an actual projection by projecting and moving onto a screen. Is that true? A. No. You asked me to provide an example, and I gave an example. I am interpreting projected for use during fabrication to simply mean that there are gridlines that are available, and are actually used during fabrication.”). So “projected,” a term not found in claim 1 but incorporated into that claim’s construction, includes virtual or conceptual lines, and the parties have waded into a construction of the construction, which the Commission disfavors. See Certain Automated Teller Machines, ATM Modules, Components Thereof, and Products Containing the Same, Inv. No. 337-TA-972, Comm’n Op. at 6 (Jan. 30, 2017) (“We find the claim constructions on review to be both more complicated, and less clear, than the claim terms themselves. Instead of focusing on interpreting the claim language, the parties invited the ALJ to construe the constructions, and then to construe
41 the constructions of the constructions. Doing so caused the constructions to lose sight of the claim language itself.”). In any event, Dr. Foty persuasively testified how the gate structures in the Accused Products are “positioned in accordance with a gate horizontal grid that includes at least seven gridlines,” where a grid is actual or virtual projected gridlines used at any point in the fabrication of an integrated circuit. In particular, the cited layout files for the Accused Products show the (CDX-0009C at *8-13; CDX-0011C at *7-9) and teardown imagery shows the same (CDX-0009C at *20; CDX-0010C at *9). It does not matter that the virtual gridlines are only observable after gate creation and through controlling the to create the transistor gates. See RRB at 3. Intel documentation shows this arrangement, or positioning, was “in accordance” with a planned layout (i.e., not happenstance). See CX-1144C at Q/A 686 (citing CX-0661C at -56472, 56460), 1912- 1915 (citing CX-0135 at -13, -23; CPX-042 at -1512). Thus, the limitation is met in all Accused Products. b. First-metal structures positioned in accordance with a first- metal vertical grid Second, Respondents and Staff dispute whether “first-metal structures positioned in accordance with a first-metal vertical grid” is met in the Intel 14nm Products and Intel 10nm Products. RIB at 19-20, 46; SIB at 27-32. For this limitation, Tela contends the “M0 layer” in the Intel 14nm Products and the “M0 layer” in the Intel 10nm Products both include structures positioned “using a 1-D gridded approach” in satisfaction of the claims; where “M0” “refers to the first metal interconnect layer above the gates.” CIB at 32, 34. Tela primarily relies on Intel’s design rules as evidence of the “1-D gridded approach” (id. at 32-37 (citing, inter alia, CX-1144C at Q/A 330-367, 438-440, 889- 891, 1540-1570, 2034-2036, 2456-2470; RX-0008C at Q/A 145; CPX-0497C; CPX-0341C; CPX-
42 0097C)) in addition to “SEM images of the M0 interconnects” (id. at 34 (citing CX-1144C at Q.A 901-904, 1558; CDX-0008C at *68), 37 (citing CX-1144C at Q/A 2027-2030, 2462-2463; CDX- 0010C at *36)). As one example, Tela argues the design rules specify Id. at 33 (citing, inter alia, CX-1144C at Q/A 270, 330, 709; CPX-0497C at *780-781), 35 (citing, inter alia, CX-1144C at Q/A 270, 367, 709; CPX-0097C at *5851-5856). Tela views Respondents’ non-infringement position as “premised upon a fixed pitch requirement” for any claimed “grid.” See CIB at 38. Tela contends this cannot be correct, in part under principles of claim differentiation and the language of dependent claim 19, which recites “each first metal structure positioned on any first-metal gridline within the region is positioned next to and spaced apart from at least one other first-metal structure in accordance with a fixed pitch.” Id. at 38-39 (citing 334 patent at cl. 19; Hr’g Tr. at 808:14-809:6, 812:16-20). Tela adds that Respondents’ presentation of M0 layouts next to each other with varying line widths juxtaposes images that are not meant to be viewed together and not otherwise in conflict with the claims. See id. at 39 (citing RPB at 22; Hr’g Tr. at 681:19-25); CRB at 11. To the extent Respondents argue there is no “projected” grid in connection with fabrication of the first-metal layer, Tela incorporates its discussion of this issue in the “gate structures” limitation. CRB at 9. In their initial brief, Respondents rely on their discussion of the same limitation in the context of the 523 patent and summarize: Intel’s is not gridded, nor are any Metal- 0 structures positioned in accordance with a grid. Moreover, as with the gate grid limitation discussed above, Tela’s expert offers no opinion at all regarding how any alleged first-metal grid is used during fabrication (as opposed to Tela’s expert drawing alleged gridlines after the fact on layout shapes or the final structures).
43 RIB at 20. In the 523 patent discussion, Respondents first discuss an emphasis on placing features at an “optimized pitch.” Id. at 132 (citing 523 patent at 11:14-17, 11:39-47, 15:21-35, Fig. 3A; RX-0014C at Q/A 211-218). Respondents then acknowledge but stress the “metal-0” layer (that which is accused of being the “first-metal” layer in the claim) is not and its layout is left to designers. RIB at 134-135 (citing, inter alia, RPX-1990C at *059, 076; RPX-1991C at *100, 120; RX-0008C at Q/A 139-143; Hr’g Tr. at 723:22-726:8), 143. Respondents contend “[i]n other words, in the Metal-0 layers, there is no defined ‘grid’ that shapes must be positioned in accordance with—whether uniform pitch or otherwise [because] ” Id. at 135-136 (citing RX-0008C at Q/A 128-129; Hr’g Tr. at 722:4-21); see id. at 136 (“ ”), 136-137 (“because Intel does not define any ‘JULG¶ʊUHJXODURULUUHJXODUʊIRUWKH0HWDO-0 shapes to be positioned in accordance with, the Accused Products do not meet the claimed requirement that the ‘first-metal structure layout shapes are positioned in accordance with a …grid.’”), 138 (“Dr. Foty also attempts to rely on Intel layout files for Metal-0, such as the following, which ”), 139 (“these lines—added after-the-fact by Tela’s expert—are not used by Intel.”). Respondents summarize: As discussed above, the claim requires that there be a “first-metal vertical grid,” with layout shapes “positioned in accordance with” that grid and, more specifically, “positioned to extend … in a substantially centered manner along” an associated gridline. However, instead of opining that there was a grid and that, during layout, Intel positioned shapes in accordance with it, Dr. Foty opined, in effect, that there were shapes and that an (irregular) grid could be drawn in accordance with those shapes after
44 layout. His ex-post analysis inverts the claim language, getting it backward. RX-0014C (Subramanian) at Q/A 216-20; Tr. (Subramanian) at 806:5-17. RIB at 140. Respondents also incorporate their argument regarding gridlines that are “projected” as discussed with the prior limitation, “gate structures positioned in accordance with gate horizontal grid,” noting “Intel does not project or otherwise use any such grid to position the Metal-0 layout shapes, [therefore] the Accused Products do not satisfy the ALJ’s construction.” RIB at 141 (citing RX-0014C at Q/A216-218; Hr’g Tr. at 723:9-15). In their reply brief, Respondents contend Tela’s expert, Dr. Foty, inappropriately relies only on layout drawings for this limitation, which are only relevant to the 523 patent under the constructions contained in Order No. 34. See RRB at 10-11 (citing CX-1144C at Q/A 2457-2467)). In this way, Respondents argue any allusion to used during fabrication to meet this limitation are untimely and should be ignored under Ground Rule 13.1. See id. The Staff’s discussion of this limitation is incorporated into its discussions of “gate structures” and “grid” summarized above, and aligns with Respondents. See SIB at 27-34; SRB at 4-8. The limitation is met. Much of the parties’ dispute has been resolved with the prior limitation “gate structures positioned in accordance with a gate horizontal grid.” Namely, no actual, observable projection of a grid is required, and the positioning of structures according to a documented plan indicates the positioning is “in accordance with” (i.e., not happenstance). Respondents’ additional point that “grid” is not met by the Metal-0 (M0) structures because there are no “gridding rules” which Intel designers must abide by (see RIB at 135-137) is not accurate. Respondents do not challenge that Intel’s design rules require
45 See CIB at 33, 35-36; see, e.g., CX-1144C at Q/A 329-333, 358-367; CDX-0012C at *17 (citing CPX-0377C at -780); CPX-0497 at -780-781; Hr’g Tr. at 724:9-22; RPX-1991C at 120; RPX-0776C at 567. These are certainly rules, and their implementation results in the and teardown imagery of the Accused Products, i.e., a first-metal “grid.” This makes certain testimony from Intel witness —not credible. RIB at 141 (citing Hr’g Tr. at 722:1-732:7). The fact that the rules for the metal-0 structures allow does not defeat infringement as Respondents contend. See RIB at 138-141, 143; RRB at 11. The intrinsic evidence does not support reading this characteristic into a construction of “grid” under principles of claim differentiation. Specifically, claim 19, dependent on claim 1, explicitly requires a single, fixed pitch for the first- metal structures. See 334 patent at cl. 19 (“The semiconductor chip as recited in claim 1, wherein each first-metal structure positioned on any first-metal gridline within the region is positioned next to and spaced apart from at least one other first-metal structure in accordance with a fixed pitch.”). Claims 13 and 18 are similar. See 334 patent at cls. 13 (“The semiconductor chip as recited in claim 2, wherein each first-metal structure in the region is positioned next to at least one other first-metal structure on a first side in accordance with a first-metal pitch and is positioned next to at least one other first-metal structure on a second side in accordance with the first-metal pitch”), 18 (“The semiconductor chip as recited in claim 1, wherein each of at least four of the first-metal gridlines has at least two first-metal structures positioned thereon within the region, wherein each
46 of the at least two first-metal structures positioned on the at least four of the first-metal gridlines is positioned next to and spaced apart from at least one other first-metal structure in accordance with a fixed pitch.”). Curtiss-Wright Flow Control Corp. v. Velan, Inc., 438 F.3d 1374, 1380 (Fed. Cir. 2006) (“‘[C]laim differentiation’ refers to the presumption that an independent claim should not be construed as requiring a limitation added by a dependent claim.”). This differentiation between claim 1, which does not explicitly require a fixed pitch, and other claims, which do, is not automatically dispositive but does weaken Respondents’ reliance on the specification, which emphasizes structures placed at an “optimized pitch.” Interactive Gift Express, 256 F.3d at 1331 (“In construing claims, the analytical focus must begin and remain centered on the language of the claims themselves, for it is that language that the patentee chose to use to ‘particularly point [ ] out and distinctly claim [ ] the subject matter which the patentee regards as his invention.”). Thus, irregular centerline-to-centerline distances between first-metal structures (i.e., non-uniform pitch) cannot be a ground for non-infringement under claim 1. Indeed, Dr. Subramanian admitted at the hearing that fixed pitch was not a requirement. Hr’g Tr. at 808:18-809:5 (discussing similar limitation in 523 patent), 812:16-813:24 (discussing same). Correspondingly, the fact that the rules, allowing for (see RIB at 136; RRB at 72- 73, 75) is not cause for concern, either. There is no restriction in the claims themselves, or that can be read in from the specification, that would limit where the grid is located. Indeed, the 334 patent discloses and illustrates that gridding systems may vary in different regions. 334 patent at Fig. 3B, 13:26-32. Regardless, the analysis here must be focused on the actual products at issue and not the full gamut of allowable designs under Intel’s rulebook.
47 Images of the Accused Products demonstrate that the pertinent structures are “positioned in accordance with a first-metal vertical grid”; the upper two images relate to the Intel 14nm Products and the lower to the Intel 10nm Products: CRB at 8 (citing JX-210C at *84; CPX-0100C at -2152); CDX-0010C at *40, 39. As shown, the “first-metal” structures are positioned in a linear and parallel fashion. Thus, they are positioned in the 334 patent’s “grid,” albeit which distinguishes them from the gate structures discussed above. And the arrangement is intentional (i.e., not happenstance) so the arrangement satisfies the “in accordance with” requirement. Accordingly, the Accused Products meet this limitation.
48 c. Each gate gridline has at least one gate structure positioned thereon Third, Respondents and Staff dispute whether “each gate gridline has at least one gate structure positioned thereon” is met in the Intel 10nm Products, while only Respondents challenge the limitation in the Intel 14nm Products. RIB at 20-22, 46-48; SIB at 35-39. For this limitation, Tela refers to its discussion of “gate structures positioned in accordance with a gate horizontal grid” and adds, for all Accused Products, that when more than one gate structure is positioned on a given gate gridline in the region, the end-to-end separation is always less than or equal to 193 nanometers, as required by claim 1. CIB at 24 (citing, inter alia, CX- 1144C at Q/A 724, 1492-1506, 1930, 2419-2423; CDX-0009C at *14-20; CDX-0011C at *10-12). Further, Tela contends the Intel 14nm Products’ use of on some gridlines does not defeat infringement, as Tela has: [I]dentified regions that include seven gate gridlines, each with at least one transistor gate positioned on each gridline. For example, each include a region that includes seven gate gridlines, with each gate gridline having at least one transistor gate positioned thereon. CIB at 25; CRB at 14, 16. Regardless, Tela contends that embodiments within the 334 patent show regions with non-dummy gate structures on six of seven lines, demonstrating that dummy gates can constitute “gate structures” required for this limitation. Id. at 26 (citing 334 patent at Fig. 5); CRB at 16. Tela claims that are properly considered as dummy gates and thus meet the construction for “gate structures” in the same way. CRB at 17 (citing, inter alia, CX-1144C at Q/A 583-584).
49 Tela also disputes that it has in any way been inconsistent with its identification of regions and gridlines across claim elements. See id. at 25-26. In its reply brief, Tela discusses the 14nm in particular, and alleges Respondents “identify a portion that was not relied on by Tela or Dr. Foty,” noting that Tela instead “identified an infringing portion of the same cell with seven gate gridlines, each with at least one transistor gate positioned thereon (annotated in red)”: CRB at 14. For the Intel 10nm Products, Tela again contends Respondents identify a different set of gridlines than what it relied on for proving up the limitation:
50 CRB at 15. In sum, Tela takes the position: It is black letter law that “[t]he addition of features does not avoid infringement, if all the elements of the patent claims have been adopted.” Northern Telecom, Inc. v. Datapoint Corp., 908 F.2d 931, 945 (Fed. Cir. 1990). The fact that Respondents identified seven gate gridlines that allegedly do not infringe under their interpretation of “gate structure” elsewhere in the cell does not avoid the seven gate gridlines within the Intel 14nm Products that infringe, even under Respondents’ interpretation requiring transistor gates on each gate gridline. Id. at 14-15; see id. at 16 (“In other words, if the identified region includes seven gate gridlines where adjacent gate gridlines are separated by a gate pitch, then the claim is met. An eighth gridline that does not meet the claims is immaterial.”). In opposition, Respondents contend “[t]he claim term ‘gate structure’ has been construed to mean ‘feature comprising a transistor gate.’ But the alleged grids include multiple gridlines with no transistor gate positioned thereon.” RIB at 20. For the Intel 14nm Products, Respondents argue “[f]or every 14nm cell Dr. Foty identifies, there is an alleged gridline that Dr. Foty numbers and relies on, but that do not form transistor gates.” Id. at 21-22 (citing RX-0014C at Q/A 242-245; CDX-0008C at *16-21; CDX-0009C at *14-20); RRB at 8-9 (“None
51 of the regions identified by Dr. Foty has a transistor gate on each gridline”). For the Intel 10nm Products, Respondents argue they use Id. at 20. This technique results in Id. at 47-48 (citing RX-0014C at Q/A 233-234; CPX-0235C at *579; RPX-1704C; RPX-1708C). Respondents view Tela’s attempt to use as “gate structures” as improperly rearguing claim construction and as otherwise not supported by the specification. RRB at 9-10. Additionally, for these products, as opposed to the Intel 14nm Products, Respondents argue Tela has inconsistently identified what the claimed “region” is across different limitations and improperly excluded gridlines that are otherwise present in the “region” which do not contain gate structures, all in an attempt to avoid non-infringement. See RIB at 48 (citing, inter alia, CDX- 0011C at *10, 11, 12, 17, 18; RX-0014C at Q/A 235-236, 243-245; RDX-0016C at *16; DCX- 0010C at *41). As noted, the Staff finds this limitation is met by the Intel 14nm Products, but not for the Intel 10nm Products. The Staff agrees with Tela that in the Intel 14nm Products, which lie along a gridline, sufficiently qualify as “feature[s] comprising a transistor gate”:
52 The claim term “gate structure” has been construed to mean “feature comprising a transistor gate.” (Order No. 34). On its face, the formal construction does not explicitly allow for an inactive “dummy” transistor gate to replace an active, working transistor gate. But the ALJ’s claim construction considered the arguments by all parties that inactive, “dummy” gates were permissible on gridlines based on the intrinsic evidence and thus did not intend to exclude “dummy” gates, as no party argued for such a narrow construction. SIB at 35-36. The trenches used in the Intel 10nm Products, on the other hand, cannot be “gate structures” according to the Staff, and the Staff relies on the same cell layout image as Respondents (reproduced above) to show non-infringement. See id. at 36-38 (citing, inter alia, RX-0014C at Q/A 233-234); SRB at 10-11. Further, Tela’s use of less than all gridlines in a “region” is improper, according to Staff, because “if more than seven gate gridlines exist in a selected region, then every gridline (not just seven) must be shown to have ‘at least one gate structure positioned thereon.’” SRB at 9. Last, the Staff agrees with Respondents that Tela has inconsistently and improperly identified the “region” across claim limitations, again citing the same evidence as Respondents. See SIB at 39 (citing, inter alia, RX-0014C at Q/A 235-236, 243-245; RDX-0016C at *16; CDX-0010C at *41). Unlike some other disputes, resolution of this one depends upon the details of each of the cells. For background, these include: Intel 14nm Products Intel 10nm Products See, e.g., CDX-0009C; CDX-0011C; CIB at App’x B.
53 Resolution of this dispute also requires addressing two claim construction issues. First, Order No. 34 construed “gate structure” as a “feature comprising a transistor gate.” Order No. 34 at 55. Thus, a feature in an Accused Product that does not, somewhere along its length, function as a transistor gate is not a “gate structure.” See Order No. 34 at 54. Although Respondents’ claim construction briefs proposed use of the term “dummy gate” to describe such a feature, that proposed term was not construed because “the dispute over how to precisely define a ‘gate electrode feature’ that does not form a transistor gate at all” had been rendered moot by the withdrawal of previously-asserted patents. Id. Although that dispute remains moot, because the term “dummy gate” is not used in the 334 patent, a “gate structure” still must “form[] a gate structure over at least some of its length,” and a feature that otherwise appears to qualify as a gate structure, but does not because it does not form a transistor, will informally be referred to as a “dummy gate.” Id. Second, Tela contends that not all gate gridlines in a region must possess gate structures, so long as at least seven gridlines with gate structures can be identified. See CRB at 16 (an eighth gridline without a gate structure is “immaterial”). This is a question of claim construction that was not addressed in Order No. 34. The briefing on this point is sparse; Tela’s only real argument is that its proposed construction must be proper because otherwise the embodiments shown in figures 5 and 14 of the 334 patent would be excluded. See CRB at 16. But these figures do not themselves match a host of other claim limitations, and patentees have the freedom to draft claims covering different embodiments. See RRB at 9-10 (citing Intamin Ltd. v. Magnetar Techs. Corp., 483 F.3d 1328, 1337 (Fed. Cir. 2007)). Accordingly, the claim language “each gate gridline has at least one gate structure positioned thereon” is accorded its plain and ordinary meaning: each gate gridline within an identified region must have at least one gate structure positioned thereon.
54 Given these constructions, and with respect to the Intel 14nm Products, Respondents argue “[f]or every 14nm cell Dr. Foty identifies, there is an alleged gridline that Dr. Foty numbers and relies on, but that do not form transistor gates.” RIB at 22 (citing RX- 0014C at Q/A 242-245; CDX-0008C at *16-21; CDX-0009C at *14-20). Based on the numbered annotations Dr. Foty provides and relies on to show how the limitation is met in each cell (see CX- 1144C at Q/A 1495-1500; CDX-0009C at *14-19), some of the gridlines do include This is shown in the cells below where there is no yellow or green substrate region on both sides of the orange structures (see, e.g., CX-1144C at Q/A 267-269; RX-0014C at Q/A 230) on a numbered line:
55
56 Thus, these cells do not meet the limitation. The remaining cells for the Intel 14nm Products do not suffer from this problem and therefore do meet the limitation; this conclusion applies to (CDX-0009C at *15) and (CDX-0009C at *16). Accordingly, the following cells from the Intel l4nm Products have not been shown to meet this limitation: Dr. Foty’s demonstratives indicate the latter three cells comprise the entirety of cells for the Goldmont, Goldmont Plus, Ice Lake Chipset, and Cannon Lake Chipset products. CDX-0012C at *25-26. Thus, the Accused Products including these models do not infringe. The remaining Intel 14nm Products use one or both of so they meet the limitation. With respect to the Intel 10nm Products, Respondents’ and the Staff’s argument that Intel’s use of “results in lines without any gate structures positioned thereon” (RIB at 47 (citing RX-0008C at Q/A 15; RX-0014C at Q/A 229-
57 331; RX-0157 at *10)) is not persuasive. Here, helpfully, Respondents and Dr. Subramanian are more specific and provide demonstratives for each of the three 10nm cells, showing the pertinent These demonstratives, however, do not match the gridlines Tela and Dr. Foty identify and rely on to show the limitation is met (CX-1144C at Q/A 2420-2422 (citing CDX- 0011C at *10-12)) as shown below: 4 The demonstrative for this particular limitation for cell omits the numerical annotations 1-9, but the identified gridlines are the same. See CDX-0011C at *10.
58 Tela’s identification of gridlines in the cell appears to include, and See CDX-0011C at *7, 10; see also CDX-0012C at *38 (citing CPX-0237C at *3). Thus, this cell may not meet the limitation, if the layout files are taken at face value. But Dr. Auth and Dr. Subramanian testified unequivocally that the Intel 10nm Products RX-0008C at Q/A 32, 135 (“ ”); RX-0014C at Q/A 229-242; RX-0157 at *10. Therefore, what appears to be a must instead be a gate structure. And although the image of this cell includes structures (on the right hand side) that, if considered part of the claimed “region,” do not meet the claim limitation at issue, they are clearly not part of the nine gridlines Dr. Foty identifies in his analysis; nothing in Dr. Foty’s testimony suggests that the “region” he analyzes is the entirety of the cell. See CDX-0011C at *4, *7, *10; CX-1144C at Q/A 2397 (the cell “shows a region of a semiconductor ship that includes gate structures,” which have been “highlighted”). In other words, the dummy gates are extraneous to the claimed “at least seven gate gridlines” and Dr. Foty was not inconsistent in his identification of the “region” across
59 different claim elements, as Respondents and the Staff assert. See RIB at 48; SIB at 39. On balance, the totality of the evidence shows that the limitation is met in all of the Intel 10nm Products. d. Contact Structures Fourth, Respondents tersely dispute whether “at least six contact structures” is met in the Intel 10nm Products. See RIB at 40. The Staff alludes to the same dispute without specific discussion. See SIB at 39, 42. No party disputes the limitation is met in the Intel 14nm Products. For this limitation, Tela contends at least six gate contract structures are shown in the layout files of the Intel 10nm Products “that extend over a single gate similar to Figure 7B of the ’334 Patent . . . .” CIB at 43 (citing CX-1144C at Q/A 2482-2484). Tela explains that after holes are patterned to expose the top surface of the gates, “[t]he ” Id. at 44 (citing CX-1144C at Q/A 315-320; RX-0014C at Q/A 167). Tela views any argument that “contact structures” must be distinct from other claimed “first-metal structures” as inconsistent with Intel documentation and contrary to guidance provided in Order No. 34. CIB at 45 (citing Order No. 34 at 60-61); see CIB at 29 (citing, inter alia, CPX- 0232C at -2503; CPX-0030C at -1493; CX-1144C at Q/A 436). Tela argues there is “nothing in the claims or the specification that requires the gate contact to be a separate structure or separately formed from the metal interconnect structure to which it connects.” Id. at 31 (citing Cannon Rubber Ltd. v. The First Years, Inc., 163 F. App’x 870, 877 (Fed. Cir. 2005)). In opposition, Respondents argue “[i]nitially, the Accused 10nm Products do not include the claimed contacts at least because the claims separately recite contact and first-metal structures, but Dr. Foty does not identify any contact structure distinct from the first-metal structures.”
60 RIB at 40 (citing RX-0014C at Q/A 176). Respondents explain more specifically, “it is undisputed that the ” RRB at 11-12 (citing Hr’g Tr. at 312:8-21; RX-0008C at Q/A 160-163; RX-0014C at Q/A 170). As noted, the Staff alludes to a similar dispute by identifying the specific claim language “contact structures” as limitation 1[i] (SIB at 39) and then asserting limitation 1[i] is not met (id. at 42), although its discussion focuses on a lack of “overlap.” This claim element was not previously construed. See Order No. 34 at 61. The Federal Circuit has held that separate claim elements do not necessarily require separate structures within an accused device or the prior art when there is nothing in the claims or specification to suggest such a restriction. See Powell v. Home Depot U.S.A., Inc., 663 F.3d 1221, 1231-32 (Fed. Cir. 2011); Linear Tech. Corp. v. Int’l Trade Comm’n, 566 F.3d 1049, 1055 (Fed. Cir. 2009) (“We agree with the Commission's construction of ‘second circuit’ and ‘third circuit,’ defining the terms broadly to not require entirely separate and distinct circuits. Indeed, there is nothing in the claim language or specification that supports narrowly construing the terms to require a specific structural requirement or entirely distinct ‘second’ and ‘third’ circuits. Rather, the ‘second’ and ‘third’ circuits must only perform their stated functions.”). Nothing in the 334 patent suggests “contact structures” cannot be integral to or formed at the same time as the “first-metal structures,” or that there would be an advantage to keeping them distinct. Respondents have certainly not explained, with reference to either the claims or the specification, why the restriction is appropriate. Therefore, this element is construed as including both structures integral to the first- metal structures and separate from the first-metal structures, so long as they contact the gate structures. And because the evidence shows that the structures, which are formed
61 the higher-up, linear “first-metal structures,” do contact the gate structures, they qualify as contact structures. Accordingly, the limitation is met in the Intel 10nm Products. e. Each of the at least six contact structures positioned and sized to overlap both edges of the top surface of the gate structure to which it is in physical and electrical contact Fifth, Respondents and Staff dispute whether “each of the at least six contact structures positioned and sized to overlap both edges of the top surface of the gate structure to which it is in physical and electrical contact” is met in the Intel 10nm Products. RIB at 40-46; SIB at 39-42. No party disputes the limitation is met in the Intel 14nm Products. For this limitation, and the Intel 10nm Products in particular, Tela contends Intel’s design rules “ ” CIB at 47 (citing CPX-0341C at 5827-28; CX-1144C at Q/A 315-319, 1964, 1983, 2497-2498; CPX-0030C at 1493; CX-0662 at *7, 9). Tela adds: An example of a overlapping both edges of the top surface of the gate structure is illustrated in teardown images of an Intel 10nm Product (Intel i3-8121U), which show a cross-section and top view of a further confirming that this claim element is met. (CX- 1144C (Foty) at Q/A 1990-95, 2497-98; CDX-0010C.27-28.) Id. More specifically, Tela argues “[n]othing in claim 1 requires the bottom surface of the contact structure to overlap the edges of the top surface of the gate structure. And the and as such is ‘sized to overlap both edges of the top surface of the gate structure’ as required by the claims.” CRB at 18. Tela shows this upper-edge overlap in the below images:
62 CRB at 49. Tela rejects a claim interpretation which would require “the bottom surface of the contact that physically contacts the top of the gate must overlap the edges of the gate.” See id. at 49-50. In opposition, Respondents argue its RIB at 41 (citing RX-0008C at Q/A 160, 161); RRB at 12. Thus, according to Respondents, there is no overlap as shown in teardown images:
63 RIB at 42-43 (citing RX-0014C at Q/A 168; JX-0220 at *1). Respondents argue Tela’s reliance on layout file shapes cannot overcome the actual structure of the fabricated device (see RIB at 43; RRB at 12), and Tela’s expert admitted that the green-box annotations in a demonstrative showing the required overlap between the first-metal layer and the gate structure were misleading (RIB at 44 (citing CDX-0010C at *28; Hr’g Tr. at 310:15-311:13, 305:9-313:1, 468:1-469:6)), as shown below:
64 (RIB at 45). Respondents contend the top of the yellow “T” shape in the above image cannot fulfill the requirement for “overlap” because “the claim language addresses overlap at the top VXUIDFH RI WKH JDWHʊZKHUH WKH VWUXFWXUHV FRQWDFWʊQRW VRPH IODUH-out of a broader Metal-0 structure far above the contact interface, as Dr. Foty argues.” Id. (citing Hr’g Tr. at 312:22-313:1; 334 patent at 21:26-37). Respondents suggest Dr. Foty admitted at cross-examination that the claimed concept addresses the interface between the top of the gate and the bottom of the contact structure” (id. at 45-46 (citing Hr’g Tr. at 470:2-471:4)) and that the position was never properly noticed by Tela (RRB at 13-14 (citing CX-1144C at Q/A 318, 2492-99)). The Staff concurs with Respondents on all these points. See SIB at 39-42; SRB at 11-14. Resolution of this dispute requires construction of claim language not previously interpreted. Under a plain reading of the claim, and as supported by the specification, the “overlap” must actually be at the interface between the gate structure and the contact structure. The claim states “each of the at least six contact structures positioned and sized to overlap both edges of the top surface of the gate structure to which it is in physical and electrical contact.” 334 patent at cl. 1. Clearly the emphasis here is on contact (hence the name “contact structures”) with the “top
65 surface” of the gate structure, i.e., the interface between two dissimilar materials. A person of ordinary skill would surely understand the “overlap” to occur at this location, namely, the point of contact. The specification reinforces this view, stating, “it should be appreciated that in the present invention, the gate electrode contact 601 is oversized in the direction perpendicular to the gate electrode feature 501 to ensure overlap between the gate electrode contact 601 and the gate electrode feature 501.” Id. at 17:50-55. At the hearing, Dr. Foty acknowledged misalignment between these two structures was a concern. See Hr’g Tr. at 470:2-471:1. Such misalignment can be seen in, for example, the red annotation to teardown imagery of one of the DI Products: CX-1144C at Q/A 2652 (citing CX-0684 at -56335-51 (annotated)). It is clear that overlap at the point of interface would help ensure contact and alleviate misalignment between the structures. Tela’s proposed T-shape for “overlap” would not do the same. With this construction in mind, the evidence indisputably shows the limitation is not met in the actual Intel 10nm Products. As Tela itself explains, after holes are patterned to expose the top surface of the gates, CIB at 44 (citing CX-1144C at Q/A 315-320; RX-0014C at Q/A 167).
66 Teardown imagery shows this results in coextensive (i.e., no overlap) contact at the interface between the contact structure and the gate structure, as presented above. See, e.g., RX-0014C at Q/A 168; JX-0220 at *1. Thus, the limitation is not met in the Intel 10nm Products. 2. Claim 2 For reference, claim 2 of the 334 patent requires: 2. [2a] The semiconductor chip as recited in claim 1, wherein the region includes a second-metal layer including second-metal structures positioned in accordance with a second-metal horizontal grid, the second-metal horizontal grid including at least eight second-metal gridlines, [2b] each second-metal structure in the region having at least one adjacent second-metal structure positioned next to each of its sides in accordance with an x-coordinate spacing of less than or equal to 193 nanometers, each second-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated second-metal gridline, [2c] wherein at least eight of the at least eight second-metal gridlines have at least one second-metal structure positioned thereon, wherein each pair of second-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap, [2d] wherein the second-metal layer is positioned second in the stack of metal layers counting upward from the top surfaces of the gate structures. 334 patent at cl. 2. Claim 2 is not identified as in dispute by Respondents. See generally RIB. The Staff, however, asserts that claim 2’s recitation of “grid(s)” and “gridlines” invokes the same grounds for non-infringement as discussed above in connection with claim 1. See SIB at 45. Although it is unclear to which “grid” limitation of claim 1 the Staff refers—“gate horizontal grid” or “first-metal grid”—as determined above the linear and parallel positioning of both corresponding elements (gate and M0 layers) within the Accused Products satisfies “positioned in accordance with a . . . grid.” With no other elements of claim 2 in dispute, the Accused Products which infringe claim 1 have also been shown to meet the limitations of claim 2 by the testimony of Dr. Foty. CX-1144C at Q/A 1651-1709, 2527-2567.
67 3. Claim 5 For reference, claim 5 of the 334 patent requires: 5. The semiconductor chip as recited in claim 2, wherein the at least six contact structures are positioned in accordance with a contact vertical grid, the contact vertical grid including contact gridlines extending in the x- direction, each of the at least six contact structures positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated contact gridline, and at least two of the at least six contact structures positioned to also extend lengthwise in the x-direction in a substantially centered manner along a corresponding first-metal gridline. 334 patent at cl. 5. Claim 5 is not identified as in dispute by Respondents. See generally RIB. Again, though, the Staff asserts that claim 5’s recitation of “grid(s)” and “gridlines” invokes the same grounds for non-infringement as discussed above in connection with claims 1 and 2. See SIB at 45. And as with claims 1 and 2, although it is unclear from which of the two “grid” limitations the Staff is incorporating its argument, the Accused Products which infringe claim 1 have also been shown to meet the limitations of claim 5 by the testimony of Dr. Foty. CX-1144C at Q/A 1710-1730, 2568-2578. 4. Claim 15 Claim 15 of the 334 patent requires: 15. The semiconductor chip as recited in claim 1, wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of at least one transistor within the region of the semiconductor chip has a substantially rectangular shape. 334 patent at cl. 15. Several disputes exist between the parties concerning whether Tela has sufficiently shown the Accused Products meet the limitations of the claim. a. Diffusion Region First, Respondents and Staff dispute that the Intel 14nm Products or the Intel 10nm Products have a “diffusion region.” RIB at 22-39, 49; SIB at 46-52.
68 Tela contends “[i]n the Intel 14nm Products, each transistor in the region is formed in part by a corresponding diffusion region, as evidenced by the diffusion region layout shapes that define the location of source and drain regions of the NMOS and PMOS transistors.” CIB at 56 (citing CX-1144C at Q/A 253-263, 284-288, 392-393, 951-988, 1731-1749; JX-0210C at *218, 225; CPX-0096C at 3554-3555). Tela explains “Intel uses a process to form the source or drain of a transistor.” Id. at 57 (citing CX-1144C at Q/A 255, 258-259, 953, 1731-1734; RPX- 1997 at 307, 319; RPX-2021 at 1048, 1060; Hr’g Tr. at 450:25-452:19; Hr’g Tr. at 450:25-252:19, 649:2-652:12). Tela continues: (CX-1144C (Foty) at Q/A74; see also Tr. (Foty) at 446:6-17.) Id. Tela claims this meets Order No. 34’s construction for “diffusion region” as “selected portions of the substrate within which impurities have been introduced to form the source or drain of a transistor” because “the source and drain regions are heavily doped semiconductor regions occupy[ing] a portion of the area or region specified by a corresponding diffusion layout shape.” Id. (citing, inter alia, CX-1144C at Q/A 267, 972-974, 1354-1362). Tela argues “the construction is silent as to how impurities are introduced” and suggests is one such technique. CRB at 20 (citing CX-1144C at Q/A 61; Hr’g Tr. at 489:8-490:11), 21 (Hr’g Tr. at 237:8-238:3, 649:2-650:3); RX-1664C at 138:15-25), 22 (citing CX-1144C at Q/A 61). Tela
69 asserts that “if the source and drain regions were separate from the substrate, charge carriers would not be able to flow from the source and drain regions, rendering the transistor inoperable.” CRB at 22 (citing CX-1144C at Q/A 69-74). Tela observes that contemporaneous Intel documents “ ’” (CIB at 58 (citing Hr’g Tr. at 652:6-12, 654:3-12), 62 (citing CX-1144C at Q/A 127, 257, 267; CXP- 0497C; CPX-0341C; Hr’g Tr. at 450:8-451:14); see CRB at 19) and “[a]s recently as 2017, ’” (CRB at 212 (citing JX-0329 at *1, 3; Hr’g Tr. at 669:2-670:9)). Tela also argues that after the source and drain regions are ” CIB at 58 (citing Hr’g Tr. at 454:8-24), 63; CRB at 23 (citing Hr’g Tr. at 452:20-454:7; RPX-1997C at 308; RPX-2021C at 1048, 1063). Should these sources and drains not be found to literally meet “diffusion region,” Tela contends they meet it under the doctrine of equivalents. See CIB at 60-61; CRB at 24-27. Tela claims the differences between Intel’s regions and “diffusion regions” are both insubstantial and substantially the same in function, way, and result. See CIB at 60-61 (citing CX-1144C at Q/A 875-988), 63-66; CRB at 24-27. And Tela contends the Intel 10nm Products are created by the same process, and thus infringe for the same reasons as the Intel 14nm Products. See CIB at 58-59. In its reply brief, Tela appears to challenge the notion that “diffusion region” is limited to the exact structures which make up the source and drain of a transistor: Respondents suggest that Dr. Foty’s reliance on the n-diffusion and p- diffusion layout shapes is irrelevant to the ALJ’s construction of “diffusion
70 region” because it “refers to the source or drain of the transistor, not to a layout shape.” (RIB at 29.) Respondents appear to suggest that the ALJ’s construction requires an exact correspondence between the area where the impurities are introduced and the area where the source and drain are formed. (See id. at 29-30.) There is no such requirement. The ALJ defined “diffusion region” as the portion (i.e. region or area) of the substrate where impurities are introduced and source or drain regions are formed as a result. (Order No. 34 at 56.) Respondents acknowledge that and sources and drains are formed within those areas. (RIB at 30; JX-0329.0001, 3; see also Tr. (Auth) at 669:2-670:9).) This establishes that the ALJ’s construction of “diffusion region” is met. CRB at 20-21. In opposition, Respondents argue that cannot meet the construction for “diffusion region” given in Order No. 34: “selected portions of the substrate within which impurities have been introduced to form the source or drain of a transistor.” Put simply, Respondents contend the substrate in the Accused Products RIB at 22, 26 (citing, inter alia, RX-0014C at Q/A 90-93, 100; RPX-1997C at *316-319; RX-0008C at Q/A 83), 31 (citing Hr’g Tr. 249:7-18, 661:16-17), 49. Respondents provide the following two diagrams showing this difference: (RIB at 24 (citing RDX-0016C at *44; RX-0014C at Q/A 83-85; RX-0008C at Q/A 59-60));
71 (id. at 25 (citing RX-0008C at Q/A 62-70; RPX-1997C at *316; Hr’g Tr. at 235:19-236:2, 241:10- 242:18)). Respondents also provide the following teardown image showing the bulbous shape of the epitaxially grown material: RIB at 32 (citing RX-0008C at Q/A 75; PRX-2021C; Hr’g Tr. at 743:3-10). Respondents claim “[f]orming sources/drains by —was a critical innovation.” RIB at 26. Respondents explain the innovation was needed to enable Intel’s three-dimensional FinFET source
72 and drain structures because: 1) See generally RIB at 26-29 (citing, inter alia, RX-0008C at Q/A 62, 73-79; Hr’g Tr. at 254:2-5). For these technical reasons, Respondents argue, the sources and drains cannot be deemed equivalent to or interchangeable with “diffusion regions,” either. See RIB at 33-39 (citing, inter alia, Hr’g Tr. at 236:12-238:19, 253:6- 255:21, 737:16-742:3, 1114:15-19; RX-0008C at Q/A 75-83; RX-0014C at Q/A 117-118; Freedman Seating Co. v. Am. Seating Co., 420 F.3d 1350, 1361 (Fed. Cir. 2005); Minebea Co. v. Think Outside, Inc., 159 F. App’x 197, 204 (Fed. Cir. 2006)). Respondents claim “diffusion region” is a “‘meaningful structural and functional limitation of the claim,’ and the doctrine of equivalents cannot be used to erase it” (RIB at 35 (citing Conopco, Inc. v. May Dep’t Stores Co., 46 F.3d 1556, 1562 (Fed. Cir. 1994))) and point out the regions are subject to their own issued patent (id. at 38 (citing RX-0167; RX-0014C at Q/A 122-123; Festo Corp. v. Shoketsu Kinzoku Kogyo Kabushiki Co., 493 F.3d 1368, 1379-80 (Fed. Cir. 2007)). Respondents also contend the “doctrine of ensnarement” precludes application of the doctrine of equivalents for this limitation, claiming that since they raised it as a defense, the burden lies with Tela to “propose a hypothetical claim and prove that this claim did not ensnare the prior art”—a burden they have not and cannot meet with no expert testimony on the subject. Id. (citing G. David Jang, M.D. v. Bos. Sci. Corp., 872 F.3d 1275, 1287 (Fed. Cir. 2017)). As to Tela’s evidence, Respondents argue n-diffusion and p-diffusion layout shapes cannot meet the limitation, as the ordered construction refers to the source and drain of a transistor, which
73 the shapes are not—as acknowledged by Dr. Foty. RIB at 29-30 (citing Hr’g Tr. at 227:20-228:21). Additionally, Respondents explain and “does not indicate the actual use of diffusion in the layout shape area, and certainly not that diffusion is used to form the sources/drains.” Id. at 30 (citing RX-0008C at Q/A 89-91). Respondents also dispute Dr. Foty’s opinion that any material electrically connected to the substrate can be considered “substrate” (see id. at 30-31) and argue his opinion is largely conclusory (see RRB at 38-39 (citing CX-1144C at Q/A 976)). Finally, Respondents address Tela’s theory of with the following: Tela raises a new argument for the first time in its Post-Hearing Brief that Intel somehow infringes because it uses Tela’s attempt to argue infringement based on this hypothetical unintentional by- product is neither timely nor credible, and it underscores the weakness of Tela’s original theories. As a preliminary matter, because Tela did not raise this infringement theory until its Post- Hearing Brief, the theory has been waived. G.R. 13.1 RRB at 22. If the argument is not deemed waived, Respondents argue the unrebutted testimony in the record is that no diffusion takes place. See id. at 23-24 (citing RX-0008C at Q/A 98; Hr’g Tr. at 970:13-971:2). The Staff agrees with Respondents’ non-infringement positions, in both the literal and equivalence contexts. See SIB at 46-52, 56-58; SRB at 15-17, 18-20. The Staff summarizes, “[s]imply put, process does not introduce impurities into the substrate to form sources or drains” (SIB at 50), and views a lack of interchangeability as precluding a finding of equivalence (SRB at 19).
74 The limitation is not literally met. The ordered construction for “diffusion region” is “selected portions of the substrate within which impurities have been introduced to form the source or drain of a transistor.” Order No. 34 at 56. The parties’ proposals for this term all included the phrase “portions of the substrate” or “defined in the base substrate.” See id. at 55. Within all Accused Products, Tela has identified the source and drain structures, located along the fins created by FinFET processes, as the “diffusion region[s].” See CIB at 57 (“The diffusion regions in the Intel 14nm Products meet the ALJ’s construction of ‘diffusion region.’ The source and drain regions in the Intel 14nm Products are ‘selected portions of the substrate within which impurities have been introduced to form the source or drain of a transistor . . . .”); see CRB at 19. The record is clear, however, that the structures cannot fairly be considered “substrate.” The parties’ experts both describe how these structures are first created by Dr. Foty testified: The source and drain regions in the Intel 14nm and 10nm processors are formed CX-1144C at Q/A 255; see CX-1144C at Q/A 259, 392-393; CPX-0197C at -974-1043. Dr. Subramanian testified: Starting back at Intel’s
75 RX-0014C at Q/A 79; see RX-0014C at Q/A 87-97; RPX-2062C; RPX-2064C; RPX-1997C at - 298-319; RPX-2021C at -11-60. The is not a modification of existing material through the introduction of impurities, as required by the claim. Dr. Auth credibly explained that the “substrate” is simply that wafer material which is received from the wafer manufacturer: Q. Are Intel’s sources and drains a portion of the substrate? A. No. Our as opposed to modifying the substrate. Q. Why don’t you consider to be a portion of the substrate? A. The substrate is the wafer we receive from the wafer manufacturer. Our RX-0008C at Q/A 81-82. This is a point on which Tela witness Mr. Gandhi agreed. RX-1662C at 103:17-22. Dr. Foty also described the growth as “a different way of creating a source/drain that’s electrically connected to the substrate” (Hr’g Tr. at 254:14-21 (emphasis added)) as opposed to the previously discussed means of modifying the substrate itself (see generally id. at 235:19- 254:13). Tela offers a number of arguments as to why the should still be considered “substrate” but none are persuasive. For
76 example, Tela characterizes the ” (CIB at 57 (emphasis added)), but the cited expert testimony from Dr. Foty (id. (citing CX-1144C at Q/A 67-72, 393, 423)) never describes it as such. Tela also claims that the (CIB at 57; CRB at 23), but this is not supported beyond the say-so of its expert (see id. (citing CX-1144C at Q/A 393, 423; Hr’g Tr. at 446:6-17); see CX-1144C at Q/A 425) and it is apparently disputed by Dr. Auth (RX-0008C at Q/A 80 (discussing ”)). Moreover, As stated by Dr. Subramanian, “the claim construction requires introducing impurities into the substrate, not into a material that ‘matches’ the substrate.” RX-0014C at Q/A 107. Relatedly, Tela’s claim that must be present “because without it, charge carriers could [not] flow between the source and drain regions of the transistor, rendering it inoperable” (CIB at 57; see CRB at 22 (citing CX-1144C at Q/A 74) is beside the point. Even assuming this assertion is true, at most it implies that source and drain regions have not that they are part of that substrate. Moreover, that “Intel’s technical witness and contemporaneous documents describe the portion of the substrate where impurities have been introduced using (CIB at 58; see CRB at 21-22) is immaterial. The source and drain regions, in actuality, are , regardless of Intel’s own terminology. Lastly, Tela’s additional argument concerning a “
77 (see, e.g., CIB at 58), is particularly revealing. The theory, if true, would avoid the substrate problem discussed above, because the “pre-existing portions of the fin” are indisputably substrate. But this contention was not disclosed in Tela’s pre-hearing brief and has been waived under Ground Rule 13.1. Compare CPB at 14, 36 (all mentions of ) with Hr’g Tr. at 452:20– 454:24. Moreover, there is no evidence that any causes the relevant region of the substrate to “form the source or drain of a transistor,” as required by claim 15. Order No. 34 at 56. Accordingly, the Accused Products have not been shown to literally infringe because they literally lack the required “diffusion region(s).” The limitation has been shown under the doctrine of equivalents, however. Admittedly, Dr. Foty’s testimony on equivalence under an “insignificant differences” test is insufficient. It largely consists of generalities about processes that would allegedly be understood as insignificantly different, only to conclude with “[t]he source and drain regions in the Intel 14nm processor are highly doped n-type or p-type regions, which is the same as the source and rain regions in a transistor fabricated using a standard CMOS process in 2005.” CX-1144C at Q/A 976. The opinion does not address on any technical level why those differences which might, and did, preclude literal infringement are insignificant. Accordingly, equivalence is not proven under this approach. With respect to function-way-result analysis, Dr. Foty’s discussion is more substantial and, ultimately, persuasive. As determined above, the Accused Products do not literally infringe because their sources and drains are formed through the introduction of impurities via —and not into substrate as the limitation requires. See RX-0014C at Q/A 107, 119; RX-0008C at Q/A 65-71, 98. Thus, the issue is whether these latter sources and
78 drains, once created, are substantially the same in function, way, and result, as the former sources and drains. Dr. Foty has persuasively explained how the functions of each type of source and drain are the same—to provide charge carriers in a transistor circuit. CX-1144C at Q/A 976. Respondents’ expert, Dr. Subramanian, seems to acknowledge this shared function but then focuses on differences which are not material to the analysis, particularly the use of the sources and drains in three sided-fin applications as opposed to planar layouts. RX-0014C at Q/A 118. Respondents’ briefing similarly focuses too narrowly on attributes of Intel’s epitaxially grown structures that enable certain levels of performance, and then describes them as the “function.” See RIB at 36 (“[t]he function of Intel’s sources/drains is to act as sources/drains specifically for FinFET transistors and to achieve strained silicon”). Dr. Foty has also persuasively explained how the ways the functions are achieved are the same: “by including a other than and in addition to those of the semiconductor material,” which are referred to as dopants or impurities. CX-1144C at Q/A 976. Respondents’ witnesses agree such impurities are introduced during (albeit not introduced into the substrate). See RX-0014C at Q/A 107, 119; RX-0008C at Q/A 65-71. The record further shows these impurities are responsible for charge carrier creation by leaving electron “holes” in P-type semiconductors and providing extra electrons in N-type semiconductors. See CX-1144C at Q/A 69; RX-0014C at Q/A 119. Thus, the way involves different structures but is substantially the same. Lastly, Dr. Foty has sufficiently explained substantially the same results from the functions, and ways of accomplishing those functions, between sources and drains formed from introducing impurities into an epitaxial growth and sources and drains formed from introducing impurities into
79 a substrate—namely, a functioning transistor. CX-1144C at Q/A 976. Respondents’ emphasis on the (see RIB at 37; RRB at 17- 18) are all well taken; they lead to enhanced performance of the sources and drains, are no doubt necessary for smaller process nodes, and perhaps are entitled to separate protection under the patent laws. 5 Respondents call these “critical differences” (RIB at 39), yet none actually differentiate the function of the as it pertains to the claimed invention (i.e., to serve as source or drain), the way in which that function is accomplished (i.e., electron vacancies due to first type of impurity, electron surplus due to second), or the result (functioning transistor) from the ordered construction of “diffusion region.” Accordingly, the function-way-result test is satisfied. Nor is doctrine of equivalents infringement precluded under ensnarement. True, “the burden of persuasion is on the patentee to establish . . . that the asserted scope of equivalency would not ensnare the prior art.” DePuy Spine, Inc. v. Medtronic Sofamor Danek, Inc., 567 F.3d 1314, 1323-24 (Fed. Cir. 2009); see Intendis GMBH v. Glenmark Pharms. Inc., USA, 822 F.3d 1355, 1363 (Fed. Cir. 2016). But Respondents have a burden of production to identify the prior art they contend is ensnared, and with sufficient specificity to identify what is in dispute. See Intendis, 822 F.3d at 1363 (“prior art introduced by the accused infringer [must be] assessed”). Respondents’ only effort to meet this burden is a single sentence in their opening brief, where they assert that the doctrine of equivalents “would improperly ensnare the prior art, including Intel’s prior art 45 nm process node.” RIB at 38. This is too vague to trigger Tela’s burden. It is also 5 It appears the patent granted to Intel that Respondents’ reference (RIB at 38 (citing RX- 0167)) focuses on features other than the mere fact of epitaxial deposition (see RX-0014C at Q/A 122 (citing RDX-0016C at *58; RX-0167 at cl. 4)).
80 not clear that the Intel 45nm Products would even be ensnared because they lack other elements of the claim such as gate structures orthogonal to first-metal structures. See, e.g., RX-0007C at Q/A 426, 610. Moreover, generation of a hypothetical claim, which Respondents contend Tela must do, is not the only method of demonstrating non-ensnarement. See RIB at 38; see G. David Jang, 872 F.3d at 1285 n.4 (“hypothetical claim analysis is not the only method” to evaluate ensnarement). Accordingly, the “diffusion region” limitation is met in the Accused Products under the doctrine of equivalents. b. Substantially rectangular shape Second, Respondents and Staff allege that, should the Intel 14nm Products or the Intel 10nm Products have “diffusion region[s],” those regions have not been shown to have “a substantially rectangular shape.” RIB at 39-40, 49; SIB at 52-56. This claim element was not previously construed. See Order No. 34 at 48-50. Tela’s position is that “[t]he identified regions have a substantially rectangular shape from a layout or top down view. This is evidenced by a top view illustration presented in Dr. Foty’s demonstratives at CDX-0009C pages 127-131.” CIB at 58 (citing Hr’g Tr. at 454:8-24; CX-1144C at Q/A 758-765, 1734), 59 (citing CX-1144C at Q/A 2578-2589; CDX-0011C at *72-74). Tela disputes that the “rectangular” shape can be evaluated from a side-perspective or vertical cross- section, as Respondents contend. CRB at 27-28 (citing Order No. 34 at 50). Tela also criticizes the Staff for alleging that, from a top-perspective, the source and drain regions are not rectangular. See id. at 28 (citing SIB at 54). The limitation is not met. As defined in Order No. 34 and explained above, the “diffusion regions” of the claim must be a location within a substance (i.e., the substrate) where the introduction of impurities causes the creation of a source or drain of a transistor. Even assuming
81 the constitute the diffusion region, there is no evidence they are substantially rectangular from a top-perspective. See, e.g., CDX-0012C at *8; CDX-0009C at *126-131. And Dr. Foty conceded he did not provide any opinions on this issue. Hr’g Tr. at 357:12-359:12, 389:13-391:22. Accordingly, this element is not satisfied by the Accused Products, and claim 15 overall has not been shown to be infringed by the Accused Products. E. Domestic Industry – Technical Prong According to Tela’s post-hearing briefing, the construction or use of the DI Products practices claims 29 and 30 of the 334 patent. See CIB at 66. For the reasons discussed below, I find Tela has not shown by a preponderance of the evidence that the DI Products practice the claims. 1. Product Representativeness As noted above, the DI Products consist of multiple processors from non-party SAS, made with varying processes designated LPE, LPP, and LPC. Tela explains Samsung’s 14LPP and 14LPC processes are more recent variants of Samsung’s 14nm FinFET process based on Samsung’s 14LPE process (CIB at 69 (citing CX-1144C at q/A 2619-2622, 2684-2690; JX-0209; CX-0686C at *17)) and yet “[t]he differences between 14LPE, 14LPP, and 14LPC are not material to the technical prong analysis; the relevant features such as are consistent between the three” (id. at 66 (citing CX-1144C at Q/A 2627)). In support, Tela references, inter alia, a 14LPP (id. (citing CX-0728C at *9)), 14LPC design manuals (id. at 67-68 (citing CX-1144C at Q/A 2663-2674, 2685)), and 14LPP advertisements which mention a “lower cost option, ‘without design rule changes or performance sacrifice’” (id. at 68 (citing CX-1614 at *1)). Thus, according to Tela, “Samsung’s 14nm FinFET process variants are representative of one another and individually and collectively show that the Exynos Products practice the ’334
82 Patent claims 29 and 30.” CIB at 69. Tela also claims, more specifically, that the particular logic circuit it located within the Exynos 7420 model, and relies on for technical prong domestic industry, is a 2:1 multiplexer and so common that it “is almost certainly found in the other Exynos Products. Id. at 69-70 (citing, inter alia, CX-1144C at Q/A 2691, 2953-2965, 3272-3278; Hr’g Tr. at 668:9-669:1). Tela observes that a similar and argues Respondents and Staff ignore this industry practice of repeating transistor arrangements. See id. at 70 (citing CPX-0094C at -3546; CPX-0091C at - 3533); see also CRB at 29-30 (citing CX-1144C at Q/A 2614-2694). Importantly, Tela takes the position that “Dr. Foty confirmed that the relevant features to his analysis of the Exynos 7420 (e.g., rectangular gate shape, rectangular contacts, gate pitch) are found in the design rules for the subsequent Samsung 14LPP and 14LPC processes.” CRB at 29-30 (citing CX-1144C at Q/A 2653-2694). In its reply brief, Tela views Respondents’ and Staff’s arguments on this issue as strawmen—i.e., immaterial to the claims—akin to discussions of fin height and voltage types. CRB at 30 (citing RX-1144C at 2626-2629); JX-0209 at *3), 33 (“Respondents identify design rules allowing But this too has no effect on the technical prong claim analysis.”). Tela argues, “[t]ellingly, Respondents and Staff never directly refute Dr. Foty’s analysis as to representativeness. Instead, they merely observe that that the design rules allow without explaining how those rules are material to the technical prong analysis.” Id. at 32. In one example, Tela refers to a for Samsung’s “14nm processes” and argues that larger pitches, as Respondents suggest is possible, “would result in a larger, slower, more expensive chip that no longer qualified as ‘14nm.’” Id.
83 Respondents and the Staff challenge this representativeness. RIB at 49-59; SIB at 59-65. Respondents specifically note that besides the Exynos 7420, “Tela did not perform reverse engineering or obtain any technical discovery from Samsung on the Other DI Products, 6 and therefore Tela has no evidence that they actually practice the claims.” RIB at 49; see id. at 56 (discussing Samsung manuals come from As to the particular logic circuit in the Exynos 7420 Tela has selected and claims is likely present in all other DI Products, Respondents view it as just “one specific configuration of 22 transistors in a chip with over a billion transistors” (id. at 50) and allege “Dr. Foty makes no attempt to show that this transistor configuration is present in any of the Other DI Products” (id. (citing RX-0014C at Q/A 439-4509)). Respondents contend Dr. Foty was misleading when he claimed to rely on SEM images for products other than the Exynos 7420 to determine physical layouts as “[t]here is no such reverse engineering of the Other DI Products in the record.” See id. at 57 (citing CX-1144C at Q/A 2629; RX-0014C at Q/A 497). Respondents emphasize that showing the particular 22-transistor configuration from the Exynos 7420 is present in the other DI Products is critical to certain claim elements, as opposed to claim elements which may be shown through design manuals; claim elements such as “29(g), 29(h), 30(h), and 30(i) of the ’334 patent and elements 27(m) and 28(m) of the ’523 patent.” RRB at 27-28. As to the manufacturing processes 14LPE, 14LPP, and 14LPC, Respondents claim there is actually a fourth process, 14LPU, and within each, several different with “significant impact” on arrangement of transistors and structure dimensions. See RIB at 50 (citing RX-0014C at Q/A 428; JX-0209 at 3), 55. At a more basic 6 Respondents designate the S5E8890, S5E7880, S5E7570, S5E7870, and S5E7883 as the “Other DI Products.” RIB at 49.
84 level, Respondents argue the 14LPP and 14LPC design manuals Tela relies on “are ‘a set of parameters that specify certain geometric and connectivity restrictions’—they do not specify the actual design of the chip or configuration of the structures, which is what Tela must prove to show that the claims are practiced.” Id. at 51 (citing RX-0014C at Q/A 438). Respondents allege “Samsung has explicitly stated that its 14LPE process used to manufacture the Exynos 7420 has a different “transistor structure” than the 14LPP process used for two of the other chips, and Samsung has distinguished the 14LPP and 14LPC processes used for the Other DI Products as an improvement over the LPE process.” Id. at 52 (citing RX-0014C at Q/A 452-454; RX-0146 at *2; RX-0148 at *2). Respondents also point to different in the 14LPP and 14LPC processes than are found in the Exynos 7420. Id. at 53 (citing RX-0014C at Q/A 461-466, 470-478; CX-0727C at 135, 146; CX-0726C at 165). In their reply brief, Respondents criticize Tela’s use of news articles to supplement the details found in the design manuals themselves (see RRB at 28-29) and observe that one article which Tela quotes is actually a comparison between LPP and LPC, and not between either with LPE (see id. at 29 (citing CX-1614 at *1)). Respondents also argue that the evidence regarding commonality of 2:1 multiplexers was based on “Mr. Becker’s non-objective testimony, with no foundation, especially as to Samsung chips.” Id. at 30 (citing Hr’g Tr. at 121:18-122:4). Respondents state flatly “[t]here is no evidence that the specific multiplexer identified in the Exynos 7420 was used in any of the Other DI Products” and add “[a] logic function by itself does not practice the claims—the logic circuit must be implemented into a semiconductor chip in a particular way.” Id. at 30 (citing RX-0014C at Q/A 501-507). The Staff echoes many of Respondents’ points including the facts that “Tela did not obtain any technical discovery—no documents and no testimony—from Samsung or SAS. For example,
85 Samsung and SAS (and relevant third party Qualcomm) did not produce design layout files, mask layout files, or source code for any of the alleged DI Products” (SIB at 59; see id. at 61 (citations omitted)), and “Dr. Foty did not obtain or reverse-engineer any of the Other DI Products— consistent with his failure to obtain or personally reverse-engineer any of Intel’s Accused Products—to provide any direct evidence for those newer semiconductor chips” (id. at 61). The Staff, relying on testimony from Dr. Subramanian, claims “[t]he evidence shows that these three processes are materially different and were released at different times” and the designs are “quite different” as between the Exynos 7420 and other DI Products. SIB at 63 (citing RX-0014C at Q/A 435); SRB at 21 (citing RX-0014C at Q/A 435, 448-509). Thus, the Staff takes the position that Tela and its expert, Dr. Foty, were not able to conduct a proper “representativeness” analysis and cannot meet their burden here. SIB at 61. Tela has not met its burden of showing representativeness. Certain LED Lighting Devices, LED Power Supplies, and Components Thereof, Inv. No. 337-TA-1081, Comm’n Op., at 10 (July 23, 2019) (holding the complainant “must show by a preponderance of the evidence that the products its expert analyzed are indeed representative of unanalyzed products.”) (citing Certain Semiconductor Devices, Semiconductor Device Packages, and Products Containing Same, Inv. No. 337-TA-1010, Order No. 77 (March 15, 2017)). Its collected evidence is of mixed nature and circumstantial at best. Tela obtained and analyzed an actual Exynos 7420 chip, but no corresponding LPE design rule document; and obtained LPP and LPC design rule documents for the remaining DI Products, but no chips. CX-1144C at Q/A 2683 7 ; RX-0014C at Q/A 437; RDX- 0016C at *176. Thus, Tela claims both: that the LPP and LPC design rule documents apply to the 7 Dr. Foty refers to an Exynos 7240 throughout his testimony, which I understand should be 7420.
86 Exynos 7420, and that the identified transistor cell within the Exynos 7420 applies to products made under LPP and LPC processes. See CIB at 67 (“In particular, the analysis is based on a teardown of the Exynos 7420, teardown reports for the Exynos 7420, and design rules for Samsung’s 14LPP and 14LPC processes. The two sets of design rules are substantially similar and the teardown analysis establishes that the relevant features of the Exynos 7420 conforms to both sets of design rules.”). Tela has not sufficiently shown the latter of the two claims, i.e., that the particular cell it identifies and relies on within the Exynos 7420 (CX-1144C at Q/A 2701, 3122) exists within the other five models of DI Products. This is critical because there are claim limitations which require an arrangement of transistors that would come from the chip designer’s chosen layout and not guaranteed to be present under the design rules. RRB at 27-28; see CRB at 30 (“The purpose of design rules is to tell layout designers what they can and cannot do – if the layouts fail to comply with these rules, they cannot be manufactured.”). Respondents refer to limitations 29(g), 29(h), 30(h), and 30(i) of the 334 patent, reproduced below: [29g] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, [29h] wherein the at least four transistors of the first transistor type include a first transistor of the first transistor type, wherein the at least four transistors of the second transistor type include a first transistor of the second transistor type, wherein a first gate structure forms both a gate electrode of the first transistor of the first transistor type and a gate electrode of the first transistor of the second transistor type. (334 patent at cl. 29);
87 [30g] wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of any transistor within the region has a substantially rectangular shape, [30h] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch[.] (id. at cl. 30). Considering it is the patentee’s choice where to define the claimed “region” within an accused product, many other limitations could be added to this list including, for example, “wherein each gate gridline has at least one gate structure positioned thereon” and “a total number of first-transistor-type-only gate structures within the region is equal to a total number of second- transistor-type-only gate structures within the region.” 334 patent at cl. 29. It is entirely unclear how these limitations, as just two examples and in addition to those identified by Respondents, could be shown merely by design rules as opposed to an actual fabricated design. Indeed, Dr. Foty does not rely on design documents to show them. See CX-1144C at Q/A 3133, 3215-3218. Moreover, in a discussion of gate contact structures, Tela actually emphasizes, and thereby acknowledges, that the content of the LPP and LPC design manuals is not the basis for practicing the claim. Rather, the basis is the actual circuit arrangement found in the Exynos 7420 and imputed to the other chips: Similarly, Respondents identify design rules allowing But this too has no effect on the technical prong claim analysis. The multiplexer identified by Dr. Foty does not include (See, e.g., CDX-0013.14) Respondents’ identification of a potential non-practicing structure does not undermine Dr. Foty’s identification and analysis of a representative logic circuit in Exynos 7420. CRB at 33.
88 Dr. Foty’s opinion that the particular transistor arrangement is present in the other DI Products is therefore little more than speculation. He starts with a general observation that the semiconductor industry relies on cell libraries and jumps to the conclusion that the particular Exynos 7420 region is “almost certain[ly]” in any other 14nm Exynos processor: Q. How, if it all, do the SEM image that you reviewed relate to other Exynos processors? A. Based on my review of the SEM images, it is my understanding that the Samsung Exynos 7240 was laid out using cells from a cell library. In the industry, it is typical to reuse verified cell libraries at a given process node – once it has been shown that the cell (as specified in the layout) can be successfully manufactured with the desired performance characteristics. As such, the circuits in the SEM images that I analyzed for the Exynos 7240 are almost certain to also be found in other Exynos processors manufactured using Samsung’s 14nm process. CX-1144C at Q/A 2692. Tela implies additional testimony explains the connection beyond assertions of industry practice (see CRB at 29 (citing CX-1144C at Q/A 221-222, 2614-2694), 20 (“Respondents characterize the multiplexer cell as a ‘22-transitor arrangement’ and allege that there is no evidence it is found in the other Exynos Products. . . . These allegations, however, are controverted by the evidence of standard industry practice.”), 32-33 (citing CX-1144C at Q/A 2627, 2679-94)). But the testimony does not provide such additional support. This is not enough on its own to satisfy Tela’s burden, and even if it was, the record contains contradicting evidence. For example, Tela’s identification of cells in the Accused Products shows that even with industry use of cell libraries (and the thousands of repetitions of cells within a certain model (see CIB at 70)), not all cells within a single process node are necessarily covered by the 334 patent’s claims. For instance: the cells for certain Intel 14nm Products (Broadwell, Sky Lake, Kaby Lake, Coffee Lake); the cell for just one of the Intel 14nm Products (Cascade Lake); the cells for another group of Intel 14nm
89 Products (Goldmont, Goldmont Plus); and, finally, the cell for a last group (Ice Lake Chipset; Cannon Lake Chipset), as in the table below: Intel 14nm Products Product Family/Architecture Associated Cells Broadwell; Sky Lake; Kaby Lake; Coffee Lake Cascade Lake Goldmont; Goldmont Plus Ice Lake Chipset; Cannon Lake Chipset See CDX-0012C at *25-26; RDX-0016C at *37-39. Under Dr. Foty’s reasoning on the DI Products, just one cell from this set of six could be representative of all the Intel 14nm Products. Clearly, however, this would not have sufficed as evidence of infringement. Furthermore, Dr. Foty’s opinion is generally not as well supported for this topic. At one point in his testimony, he states he “completely disagree[s]” with Dr. Subramanian’s opinions on the materiality of Samsung’s 14nm process variants because, in part, he “was able to observe the physical layout of the devices through the SEM images, and confirm my understanding as to how those features are placed in view of the design rules.” CX-1144C at Q/A 2629. Yet in another portion he only mentions the Exynos 7420 as a physical product received and looked into:
90 Q. Did you analyze any particular Samsung Exynos products as part of your consideration of the technical prong of domestic industry requirement? A. Yes, in forming my opinions regarding the technical prong of the domestic industry requirement, I analyzed the Samsung Exynos [7420] processor. Q. What is the Samsung Exynos [7420] processor? A. The Samsung Exynos [7420] processor is a processor fabricated using Samsung’s LPE Process. Q. How did you perform your analysis of the Samsung [7420] processor? A. I analyzed teardown images of a Samsung Exynos processor, such as SEM images, which is fabricated using Samsung’s LPE process. I also considered documents regarding the Samsung Exynos products such as the design rules we discussed earlier. CX-1144C at Q/A 2680-2682. On this point, Respondents argue, and Tela does not dispute, that “Tela identifies—and its expert relies on—such images only for the Exynos 7420. . . . There is no such reverse engineering of the Other DI Products in the record.” RIB at 57 (citing RX-0014C at Q/A 497). As to other evidence, Tela’s briefing refers to testimony on the extreme commonality of 2:1 multiplexers (CIB at 69; CRB at 30), but Respondents are persuasive when they note “a logic function by itself does not practice the claims—the logic circuit must be implemented into a semiconductor chip in a particular way. Indeed, there are a number of well-known ‘circuits’ that implement a 2:1 multiplexer, as well as a number of known implementations of a 2:1 multiplexer into a semiconductor chip that do not practice the DI claims” (RRB at 30-31 (citing, inter alia, RX-0014C at Q/A 500-507); see Hr’g Tr. at 1018:14-1019:21). Dr. Foty has not even attempted to refute this point. In sum, the actual transistor arrangement within a chip is critical to satisfaction of the claims. Tela has no direct evidence showing the identified transistor arrangement of the Exynos
91 7420 is present in the other DI Products, however, and the circumstantial evidence regarding industry practices is particularly weak. Accordingly, Tela has not shown the Exynos 7420 is representative of the other DI Products (S5E7570, S5E7870, S5E7880, S5E7883, and S5E8890) such that practice of the claims of the Asserted Patents by the Exynos 7420 suffices for all. Nevertheless, the following discussion of particular claim limitations assumes all products are represented by the Exynos 7420. 2. Disputed Claims Respondents contest Tela’s alleged practice of claims 29 and 30. See RIB at 59-62. The Staff takes the same position. SIB at 65-67. Tela has not shown practice of either claim. a. Claim 29 For reference, claim 29 of the 334 patent requires: 29. [29a] A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, the gate structures positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate structure positioned thereon, [29b] wherein each pair of gate structures that are positioned in an end-to- end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers, [29c] wherein at least one gate structure within the region is a first- transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type,
92 [29d] wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region; [29e] a number of contact structures formed within the region of the semiconductor chip, wherein each gate structure that forms any transistor gate electrode within the region has a respective top surface in physical and electrical contact with a corresponding contact structure having a substantially rectangular shape, wherein each contact structure that contacts a given gate structure that forms any transistor gate electrode does not contact another gate structure, wherein each contact structure having a corresponding length greater than or equal to a corresponding width is oriented to have its corresponding length extend in an x-direction, wherein each contact structure that contacts a corresponding gate structure is positioned to overlap at least one edge of the corresponding gate structure, [29f] wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of any transistor within the region has a substantially rectangular shape, [29g] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, [29h] wherein the at least four transistors of the first transistor type include a first transistor of the first transistor type, wherein the at least four transistors of the second transistor type include a first transistor of the second transistor type, wherein a first gate structure forms both a gate electrode of the first transistor of the first transistor type and a gate electrode of the first transistor of the second transistor type. 334 patent at cl. 29 (annotated). Several disputes exist between the parties concerning whether Tela has sufficiently shown the DI Products meet various limitations of the claim. These are addressed below. In view of the testimony of Dr. Foty that the DI Products practice those remaining limitations which are not in dispute, the DI Products have been shown to practice them as alleged. See CX-1144C at Q/A 3127-3290; CIB at 70-73.
93 i. Gate structures positioned in accordance with a gate horizontal grid First, Respondents and Staff dispute that “gate structures positioned in accordance with a gate horizontal grid” is met in the DI Products. RIB at 62; SIB at 65-67. For this limitation, Tela alleges: [T]he Samsung 14LPP and 14LPC design manuals specify (CX-1144C (Foty) at Q/A 2786-96, 2823-25; CX-0727C.117, 120, 128, 132-33; CX-0726C.137, 156, 161-62.) Teardown analysis of the Exynos 7420 further show that the Exynos Products meet this claim limitation. (CX-1144C (Foty) at Q/A 3128-35; CDX-0013C.47- 50; see also JX-0215.9-14.) CIB at 70-71. In particular, Tela alleges Samsung’s use of results in the positioning of gate structures in accordance with a grid, and provides the following teardown image in support:
94 CRB at 35 (citing JX-0215 at *9). Tela claims “[t]his positioning and orientation is also consistent with the requirements of the 14LPP and 14[LPC] design rules.” Id. (citing CX-1144C at Q/A 2642, 2671-2672, 2786-2793; CX-0726C at *156, 159, 177; CX-0727C at *128, 130, 146). In opposition, Respondents argue “Tela . . . offers no documents, testimony, or any other evidence describing Samsung’s fabrication stage at all, let alone establish that any such gridlines were used during fabrication.” RIB at 62 (citing RX-0014C at Q/A 625-636); RRB at 33. The Staff argues similar points, claiming “Tela offers no evidence of any grid or gridlines, projected or otherwise, used during Samsung’s fabrication process, and has failed to prove that this limitation is met for that reason alone.” See SIB at 66; SRB at 23. The Staff asserts no equivalence has been shown, let alone alleged, for this element either. See SIB at 66-67; SRB at 23. The limitation is met, under the same reasoning as applied to the Accused Products. Teardown images of the Exynos 7420 provided by Dr. Foty, reproduced above and below, show an unmistakable linear and parallel arrangement of gate structures:
95 CDX-0013 at *47 (citing CX-0723C). The most reasonable inference to draw is that these structures were positioned in accordance with a pre-planned grid (i.e., not happenstance) during fabrication—despite Respondents’ and the Staff’s complaints over a lack of documentary or testimonial evidence. The proof is in the final product. Further, as discussed above in connection with the Accused Products, no actual, observable, projection of a grid is required. Accordingly, the DI Products practice this limitation. ii. Diffusion regions Second, Respondents and the Staff dispute that the DI Products have any “diffusion region[s].” RIB at 60; SIB at 67-71. For this limitation, Tela notes that the Exynos Products use FinFET technology, and “design manuals, for example, show that the Exynos Products include an diffusion regions.” CIB at 72 (citing CX-1144C at
96 Q/A 2931-2936; CX-0727C at *38, 138, 141; CX-0726C at *46, 168, 171). In its reply brief, Tela highlights 14LPC and 14LPP design rules which, again, refer to the as a diffused or diffusion region: (CRB at 33 (citing CX-0726C at *46; CX-0727C at *38)); (id. (citing CX-0726C at *104; CX-0727C at *85)). Tela reasons, “[a]s such, a POSITA would understand that source/drain regions in Exynos Products are diffusion regions.” Id. As with the Accused Products, and therefore not “substrate” as literally required by the construction of “diffusion region.” It does appear, however, that Tela asserts source/drain regions are diffusion regions” for the DI Products under the doctrine of equivalents. See CRB at 33 (citing CRB at 19-28). And also as with the Accused Products, the evidence supports this assertion, so the DI products practice this limitation. iii. Substantially rectangular shape Third, Respondents and Staff argue that, should the DI Products have “diffusion region[s],” they have not been shown to possess “a substantially rectangular shape.” RIB at 60-62; SIB at 67- 71.
97 For this limitation, Tela alleges the as shown and referred to in Exynos Product design manuals, CIB at 72 (citing CX-1144C at Q/A 2931-2936; CX-0727C at *38, 138, 141; CX-0726C at *46, 168, 171; CX-1144C at Q/A 3255-3258; CDX-0013C at *61; JX-0215 at *11, 13, 15, 19, 21). Tela presents the following image from the 14LPP design rules to “show substantially rectangular diffusion regions”: CRB at 34 (citing CX-0726C at *170; CX-0727C at *38; CDX-0013 at *61). Tela continues: (See Tr. (Subramanian) 1012:3-1013:8; Tr. (Auth) at 660:18-25.) Id. Dr. Foty’s testimony relies similarly on layout shapes showing that “the are rectangular”:
98 CX-1144C at Q/A 2934 (citing CX-0272 at -00141). The limitation is not met. There is a clear discrepancy between the Dr. Foty analyzes for the “substantially rectangular” requirement (CX-1144C at Q/A 2934), and the more specific sources and drains Tela asserts meet the “diffusion region” limitation (CRB at 33). This is problematic because only the source and drain structures can meet Order No. 34’s construction of “diffusion region,” as discussed above with respect to the Accused Products, and so it is those structures which must be “substantially rectangular” from a top-perspective. As Respondents suggest (RIB at 61), the likely reason for this discrepancy is that undisputed teardown imagery of the Exynos 7420 shows the epitaxially grown source and drain structures do not have a substantially rectangular shape from a top-perspective, as shown in the bottom image below:
99 (RIB at 60 (citing RX-0014C at Q/A 579); see JX-0215 at *15); (CX-0684 at *26 (excerpted); CIB at 61 (citing RX-0014C at Q/A 580)). Accordingly, this limitation is not practiced by the DI Products. b. Claim 30 For reference, claim 30 of the 334 patent requires: 30. [30a] A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, the gate structures positioned in accordance with a gate horizontal grid that includes a number of gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate structure positioned thereon, [30b] wherein each pair of gate structures that are positioned in an end-to- end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers, [30c] wherein at least one gate structure within the region is a first- transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second
100 transistor type and does not form a gate electrode of a transistor of the first transistor type, [30d] wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region; [30e] a number of contact structures formed within the region of the semiconductor chip, wherein each of at least six gate structures within the region has a respective top surface in physical and electrical contact with a corresponding contact structure having a substantially rectangular shape, wherein each contact structure is centered in an x-direction on the gate structure with which it physical contacts, [30f] wherein each contact structure that has the substantially rectangular shape has a corresponding length greater than or equal to a corresponding width and is oriented to have its corresponding length extend in an x- direction, wherein each corresponding contact structure is in physical contact with only one gate structure, wherein each corresponding contact structure is positioned to overlap at least one edge of the gate structure contacted by the corresponding contact structure, [30g] wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of any transistor within the region has a substantially rectangular shape, [30h] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, [30i] wherein both a gate electrode of a transistor of a first transistor type and a gate electrode of a transistor of a second transistor type are formed by a same gate structure within the region. 334 patent at cl. 30 (annotated). The parties largely treat claim 30 the same as claim 29, as both claims require “diffusion regions” with “a substantially rectangular shape,” along with “gate structures positioned in accordance with a gate horizontal grid.” See CIB at 73-74; RIB at 60-62; SIB at 65-71. For all of the same reasons discussed with respect to claim 29, Respondents and the
101 Staff dispute that claim 30 is practiced by the DI Products. As determined above the DI Products do not practice claim 29. Accordingly, the DI Products have not been shown to practice claim 30. F. Validity and Other Defenses Respondents and the Staff identify and discuss the following invalidity and unenforceability theories for the 334 patent: Claims Theory 1, 2, 5, 15, 29, 30 Lack of written description 35 U.S.C. § 112, ¶ 1 1, 2, 5, 15, 29, 30 Lack of enablement under 35 U.S.C. § 112, ¶ 1 1, 2, 5, 15, 29, 30 Anticipated under 35 U.S.C. § 102(a), (b) by Intel’s 14nm Products 1, 2, 5, 15, 29, 30 Rendered obvious under 35 U.S.C. § 103 by Kitabayashi (JX-0267) and/or Intel 45nm Products 1, 2, 5, 15, 29, 30 Rendered obvious under 35 U.S.C. § 103 by Becker (RX-0027) 1, 2, 5, 15, 29, 30 Rendered obvious under 35 U.S.C. § 103 by Becker (RX-0027) and Greenway (JX-0286) 1, 2, 5, 15, 29, 30 Unenforceable due to covenant not to sue See generally RIB at 62-121; SIB at 71-95. These theories are addressed in order below. Before turning to their merits, however, a few preliminary points are warranted. Two of the disputed claims, 29 and 30, are pertinent only to the technical prong of domestic industry. See RIB at 74-75; SIB at 83-84. In general, however, it is “Commission practice not to couple an analysis of domestic industry to a validity analysis.” Certain Soft-Edged Trampolines and Components Thereof, Inv. No. 337-TA-908, Comm’n Op. at 53 (May 1, 2015). Indefiniteness is the only basis for invalidity that bears on whether the technical prong is met, because indefiniteness
102 “ma[kes] it impossible for the complainant to demonstrate whether a patent claim [is] practiced.” Certain Silicon Microphone Packages and Products Containing the Same, Inv. No. 337-TA-695, Notice at 3 (Jan. 21, 2011). But indefiniteness is not one of the asserted grounds of invalidity of these two claims. See RIB at 74-75; SIB at 83-84. Therefore, whether claims 29 and 30 of the 334 patent are invalid is not relevant, and the parties’ dispute over these claims need not be resolved or otherwise addressed. An additional threshold matter is the priority date of the 334 patent. In their motion for summary determination, Respondents argued that new matter had been added to the application resulting in the 334 patent, and that the 334 patent is consequently not entitled to the priority date Tela asserts. See Order No. 27 at 2. This argument was rejected because of the existence of genuine issues of material fact. Id. at 3. Respondents and the Staff now seemingly renew this argument. See RIB at 65; SIB at 73-74; JX-0003 at *3. Tela does not dispute that the 334 patent’s grandparent application, U.S. Patent Application No. 14/711,731 (the “731 Application”), filed on May 13, 2015, contained a paragraph not found in any earlier filing in the chain of applications, but it characterizes that paragraph as “not new matter, but a recitation of the as-filed claims.” CRB at 37; see CIB at 79; see also RX-0019 at *24-26; 334 patent at 5:49-7:24. In general, “claims to subject matter in a later-filed application not supported by an ancestor application . . . do not receive the benefit of the earlier application’s filing date.” Reiffin v. Microsoft Corp., 214 F.3d 1342, 1346 (Fed. Cir. 2000). “Support” in this context means compliance with the first paragraph of 35 U.S.C. § 112. Id. (citing 35 U.S.C. § 120). One requirement of Section 112 is an adequate written description, meaning that the patent’s disclosure “conveys to those skilled in the art that the inventor had possession of the claimed subject matter as of the filing date.” Ariad Pharm., Inc. v. Eli Lilly & Co., 598 F.3d 1336, 1351 (Fed. Cir. 2010)
103 (en banc) (citing 35 U.S.C. § 112). And one way that claimed subject matter may be conveyed, particularly for purposes of evaluating whether a disclosure contains “new matter,” is if the subject matter is “inherently contained in the original application,” that is, if it is “necessarily [] present in the original application’s specification such that one skilled in the art would recognize the disclosure.” Schering Corp. v. Amgen Inc., 222 F.3d 1347, 1352 (Fed. Cir. 2001) (citation and internal quotation omitted); TurboCare Div. of Demag Delavai Turbomachinery Corp. v. General Electric Co., 264 F.3d 1111, 1119 (Fed. Cir. 2001) (citing 35 U.S.C. § 120). The subject matter at issue comprises two claim limitations recited in claim 1, from which claims 2, 5, and 15 depend: “a gate pitch of less than or equal to about 193 nanometers” and “gate structure[s] . . . with a width of less than or equal to about 45 nanometers.” 334 patent at 30:7-11. The 334 patent specification (disregarding the new paragraph) addresses pitch and width dimensions in several places: “minimum feature sizes are approaching 45nm” (id. at 4:7-8); “current feature sizes are as small as 65 nm and are expected to soon approach sizes as small as 45nm” (id. at 9:4-6); “in a 90 nm process technology, i.e., minimum feature size equal to 90 nm, the gridpoint pitch . . . is about [240 nm]” (id. at 14:67-15:2; see also id. at 17:35, 21:54); “grid spacing is [360 nm]” (id. at 17:16; see also id. at 17:32) “gate electrode track pitch is [360 nm]” and “metal 2 track pitch” is either 240 nm or 270 nm (id. at 23:3-10); “metal 2 pitch of 280 nm” and “[w]ith the via lithography issues removed . . . about 220 nm” (id. at 26:45-49); and “at 90 nm the metal 4 pitch is 280 nm” (id. at 29:11-12). That is, the smallest pitch mentioned in the 334 patent specification is 220 nm, and although a feature size of 45nm is referenced, it is entirely aspirational. And the 2006 Provisional Application contains even fewer references to width and pitch (see generally RX-1365), with 240 nm being the smallest pitch mentioned (id. at 12).
104 This is inadequate, even applying a broad understanding of “inherency.” No person of ordinary skill would understand that the inventors of the 334 patent possessed the claimed subject matter—a width of 45 nanometers and a pitch of 193 nanometers, much less smaller dimensions— as of March 9, 2006, or at any time prior to May 13, 2015. The 45 nanometer width limitation is supported only by a “mere wish or hope,” and the 193 nanometer pitch limitation is supported by literally nothing at all. Nuvo Pharm. (Ireland) Designated Activity Co. v. Dr. Reddy’s Labs. Inc., 923 1368, 1381 (Fed. Cir. 2019). Tela’s arguments against this conclusion are unavailing. Tela principally contends that the “disclosure of scalability combined with the established knowledge of a POSITA is more than sufficient to meet the written description requirement.” CRB at 36 (citing Streck, Inc. v. Research & Diagnostics Sys., 665 F.3d 1269, 1285 (Fed. Cir. 2012)). Certainly the written description requirement may be satisfied, in appropriate cases, by the combination of a patent’s disclosure and the knowledge of a skilled artisan, as Streck holds. 665 F.3d at 1285 (“in some instances, a patentee can rely on information that is ‘well-known in the art’ to satisfy written description”) (citation omitted). But Dr. Hook, one of Tela’s experts, did not examine the 334 patent’s prosecution history for the purpose of evaluating the priority date. Hr’g Tr. at 1135:8-1136:23, 1215:6-1216:20. And the patent flatly states that “current feature sizes are as small as 65 nm and are expected to soon approach sizes as small as 45nm.” 334 patent at 9:4-6. This is essentially an acknowledgment that the inventors did not consider feature sizes of 45 nanometers to be a part of their invention as of March 9, 2006, regardless of the disclosure and the knowledge of a skilled artisan. Nor does the disclosure of “scalability,” combined with a skilled artisan’s capacity to create feature sizes of 65 nanometers, contribute anything meaningful to the analysis. The 334
105 patent states that “circuit chip area” is reduced by “approximately 50% every two years,” and that this is achieved by “reducing the feature sizes between 25% and 30%.” 334 patent at 3:60-64. But the patent is directed to “managing lithographic gap issues as technology continues to progress toward smaller semiconductor device feature[] sizes,” not to actually achieving such smaller feature sizes. Id. at 4:31-33; see CIB at 76 (the patent is “directed to a layout methodology for use as semiconductor sizes continue to scale down”). The specification describes a layout methodology which would seemingly apply where gate widths are 45 nanometers and gate pitches are 193 nanometers, but it does not “teach[] how to scale gate layouts” to achieve those smaller widths and pitches, or otherwise provide any indication that the inventors even believed that such sizes were part of their invention. CIB at 77. That the “scaling has proven true in the industry,” resulting in 2019 widths and pitches even smaller than 45 and 193 nanometers, respectively, does not mean that the inventors had possession of such small widths and pitches in 2006, or believed that those widths and pitches were a part of the invention. CRB at 36. In fact, although some of the listed prior art references use the term “scalable” or the like, the 334 patent itself does not even use the term “scalability.” E.g., JX-0003 at *12 (listing, inter alia, Baldi, et al., “A Scalable Single Poly EPROM Cell for Embedded Memory Applications”). Although not explicitly raised by Tela, there is evidence of the inventors’ conception and reduction to practice pertaining specifically to the 2006 Provisional Application, and it is similarly unhelpful. CIB at 100-101. Specifically, for purposes of establishing the date of conception, Tela argues that the 2006 Provisional Application “discloses . . . features smaller than 45nm or 193 nm, as claimed.” Id. at 101. But the evidence Tela relies on for this argument does not, in fact, support it. Dr. Hook’s opinion that gate widths and pitches of less than 45 and 193 nanometers are so “disclose[d]” is based on Figure 1 of the 2006 Provisional Application, which shows an expected
106 “feature size” of less than 45 nanometers beginning only some time after about 2012, and does not even reference gate pitch. Compare CX-1231C at Q/A 405 with RX-1365 at *15 (Figure 1 of the 2006 Provisional Application). And Mr. Becker’s rebuttal testimony about feature sizes seems to be based entirely on hindsight: although he testified that at the time the 2006 Provisional Application was filed, “minimum feature sizes” were “less than or equal to about 45nm process technology,” the application itself states only that minimum feature sizes were “approaching 45nm.” CX-1233C at Q/A 39; RX-1365 at *4. Tela also cites witness testimony to the effect that as of March 2006, “others in the industry had fabricated” devices with gate widths of 10 nanometers. CRB at 36-37; see also CIB at 76-77. Admittedly, Dr. Hook testified that “10 nm FinFET structures” had been described “in the early 2000’s,” and this does not appear to be genuinely disputed by Respondents. CX-1231C at Q/A 1761. But one exhibit cited as evidence for 10 nanometer FinFET structures, U.S. Patent No. 6,413,802, does not disclose any particular dimension size, and although Dr. Subramanian, one of its co-inventors, testified that it had “gate features in the tens of nanometer range,” it also had a gate pitch of 75,000 nanometers, not 80-100 nanometers, as Tela claims (see CIB at 76 (citing JX- 0271); Hr’g Tr. at 1007:5-17; CRB at 39 (citing JX-0302 at *47, which describes gates fabricated in 2011 with widths of 22 nm and pitches of 80-100 nm)). Also, Dr. Hook’s testimony is based in part on CX-1315, a document not admitted in evidence. CX-1231C at Q/A 1761. That is, it may have been possible in 2006 to fabricate an individual transistor with a 10 nanometer gate width, but Tela cites no evidence that an entire chip could be fabricated with 10 nanometer widths and pitches of 193 nanometers or smaller, or, more to the point, that the inventors of the 334 patent viewed such dimensions as a part of their invention. See Hr’g Tr. at 1007:5-17 (Dr. Subramanian
107 opined that a person of ordinary skill in 2006 would not have been able to make “a semiconductor chip with FinFET transistors”). Tela further cites testimony that the dimensions recited in the 334 patent refer to feature sizes “available in commercial products at that time.” CRB at 36-37 (citing CX-1233C at Q/A 40 (Becker)); see also CIB at 76-77. The specification does not distinguish between what was known at the cutting edge of chip technology and what was commercially available, however; the disclosure merely states that feature sizes “are approaching 45nm”—demonstrating that a gate width of 10nm was simply not contemplated by the inventors except as an objective that might be reached years in the future, without regard to commercial viability. 334 patent at 4:8; see also 334 patent at 9:5-6. And Mr. Becker’s testimony about feature sizes in 2006 being “less than or equal to about 45nm process technology” is inconsistent with the 334 patent itself, which (like the 2006 Provisional Application) only states that minimum feature sizes were “approaching 45nm.” CX-1233C at Q/A 39; 334 patent at 4:8. In fact, even as of 2010 the International Technology Roadmap for Semiconductors (“ITRS”) implied that 24 nanometer structures were expected to have known “[m]anufacturable solutions” by 2012, but that 10 nanometer structures were not. JX-0302 at *47; Hr’g Tr. at 1117:2-1119:24; see Hr’g Tr. at 1266:1-23 (products described in the ITRS with no known manufacturable solutions are “in research or early development phase”). Lastly, the Examiner’s views on priority date, although not binding in this investigation, warrant mention. Notices of Allowability and of Allowance issued on April 12, 2018, and what is now the 334 patent received an issue date of June 5, 2018 as U.S. Patent No. 9,991,283. See RX-0019 at *7548-7552, 7579. On May 25, 2018, however, the applicants filed an Information Disclosure Statement containing a complaint, filed 10 days earlier in the United States District Court for the Northern District of California, in which Respondent Intel Corp. sued Complainant
108 Tela for a declaratory judgment of invalidity and noninfringement of claims of other patents assigned to Tela, including patents previously asserted in this investigation. See id. at *7583- 7610. In response, an Examiner Interview took place on May 31, 2018, in which the Examiner “suggest[ed] removing [the 45 nanometer width and 193 nanometer pitch] limitations from the specification” because they were “new matter.” Id. at *7630. “No agreement was reached,” however, and on August 8, 2018, the Examiner issued a “Corrected Notice of Allowability” that found every claim “not entitled to the benefit of the prior application,” on the basis that the claimed width and pitch ranges had “no antecedent basis” in the prior-filed application. Id. at *7630- *7636. The applicants then traversed the notice of allowability and filed a declaration from Dr. Sunil P. Khatri, who opined that the ancestors of the 731 Application, including the 2006 Provisional Application, contained “written description support” for the width and pitch ranges at issue, essentially on the same basis Tela advances here. Id. at *7645-7659. The 334 patent eventually issued on November 27, 2018; although Tela argues from this that the Examiner “apparently agreed with Dr. Khatri,” there is no documentary evidence of such agreement beyond the mere fact of issuance. Id. at *7660; CIB at 79. In sum, the evidence demonstrates clearly and convincingly that the 334 patent’s disclosure does not convey to those skilled in the art, either explicitly or inherently, that the inventors had possession of the entire subject matter of claim 1 as of March 9, 2006. So the claims at issue, claims 1, 2, 5, and 15, are only entitled to a priority date of May 13, 2015, the date the new matter was added to the 731 Application, 1. 35 U.S.C. § 112, ¶ 1 (Written Description) Neither Respondents nor the Staff advance any substantive argument that the written description requirement is not satisfied by the 334 patent, in view of the 2015 priority date. They argue only that: (1) the “2015 amendment adding the Claimed Ranges in ipsis verbis” is
109 inadequate; and (2) the 2015 priority date is unavailable because the 731 Application was a continuation, not a continuation-in-part. RIB at 65-66, 65 n.8; see SIB at 74-75. Neither argument is persuasive. As to the first argument, the case law is clear that simply reciting the claim language in the specification is not enough to meet the written description requirement; the specification must “described the claimed invention” and not merely state the claimed limitations. Enzo Biochem, Inc. v. Gen-Probe Inc., 323 F.3d 956, 968 (Fed. Cir. 2002). But that is not the situation here. The new matter is a long, detailed paragraph describing the ranges in dispute, as well as the rest of the invention of claim 1 and its dependent claims. See 334 patent at 5:49-7:24. This is sufficient to satisfy the written description requirement. As to the second argument, Respondents and the Staff rely on TurboCare to argue that “new [matter] introduced during prosecution without a CIP application must find written support in the originally-filed application or else it is invalid.” RIB at 65 (citing 264 F.3d at 1119) (emphasis omitted); see SIB at 75. In TurboCare, the applicant amended his specification during prosecution in response to an indefiniteness rejection, and further added new claim 2. See 264 F.3d at 1117. The United States Court of Appeals for the Federal Circuit affirmed a summary judgment of invalidity, holding that one new element of claim 2 was new matter because the “original disclosure was [not] sufficiently detailed” to enable a skilled artisan to recognize that the applicant had invented that claim. Id. at 1118-19. But it also noted, citing in part 35 U.S.C. § 120, that “[b]ecause [the applicant] did not file a continuation-in-part application, he cannot rely on any alternative filing date for his newly added claim . . . [so] claim 2 is invalid for an inadequate written description.”
110 Respondents and the Staff place too much reliance on this statement. The applicant in TurboCare filed an application, and then amended it by adding new matter, in contravention of 35 U.S.C. § 120. Had the applicant instead added the new matter by filing a continuation-in-part application, or presumably an entirely new original application, Section 120 would not have been violated, and the filing date of new claim 2 would have been the priority date. In other words, the obverse of the Federal Circuit’s dicta in TurboCare amounts to “had the applicant added new matter by filing a later application, he would have received a later priority date, and new claim 2 would have satisfied the written description requirement.” That is essentially what happened here: the applicants filed a new application containing new matter, and because all the claims in suit possess the gate width and pitch ranges at issue, the priority date for all claims is the filing date of the new application, May 13, 2015. Admittedly, the applicants here filed a continuation application rather than a continuation-in-part, but the consequence of that is simply a later priority date rather than invalidation. See Reiffin, 214 F.3d at 1346 (“claims to subject matter in a later- filed application not supported by an ancestor application” receive a later priority date). Inasmuch as the other cases on which Respondents rely interpret TurboCare differently, those cases are not binding on me, and their interpretations are not persuasive. See RIB at 65 n.8. Therefore, claims 1, 2, 5, and 15 of the 334 patent satisfy the written description requirement of Section 112. 2. 35 U.S.C. § 112, ¶ 1 (Enablement) As with the written description requirement, Respondents renew the enablement argument that was previously rejected in the context of summary determination. See CIB at 68; Order No. 27 at 2. The crux of Respondents’ argument is that, “at the effective filing date of the patent, one of ordinary skill in the art could not practice the[] full scope” of the ranges of gate width and pitch recited in claim 1 of the 334 patent “without undue experimentation.” RIB at 68 (citing Wyeth
111 and Cordis Corp. v. Abbott Labs., 720 F.3d 1380, 1384 (Fed. Cir. 2013)). The Staff agrees. SIB at 76. There is “significant overlap” between the written description and enablement requirements of 35 U.S.C. § 112. Univ. of Rochester v. G.D. Searle & Co., Inc., 358 F.3d 916, (Fed. Cir. 2004). In one respect pertinent here, however, they are significantly different: the written description requirement is satisfied no matter how far the gate width and pitch ranges extend below 45 and 193 nanometers, respectively, but enablement cannot be properly analyzed without ascertaining the “full scope” of the claimed ranges. AK Steel Corp. v. Sollac and Ugine, 344 F.3d 1234, 1241 (Fed. Cir. 2003) (“an enablement inquiry typically begins with a construction of the claims”). This is because the written description supports width and pitch ranges with no lower bounds, but the written description may not enable them. See RIB at 68 and n.11; see also SIB at 82. So claim 1 must be construed to establish those lower bounds. As noted with respect to infringement, there is no genuine dispute that the two lines of Accused Products possess gate widths and pitches of 28 nanometers and 70 nanometers (for the Intel 14nm Products) and 22 nanometers and 54 nanometers (for the Intel 10nm Products). See CX-1144C at Q/A 275-280. Nor is there a genuine dispute that the Samsung Exynos products possess a gate width of no more than about 36 nanometers, and a gate pitch of about 78 nanometers. See id. at Q/A 3133-35. The parties’ only contentions on constructions of the claimed ranges are therefore in connection with invalidity. Unfortunately, those contentions are not entirely clear. Respondents state that “there is a (yet unknown) physical limit to how small gate widths and pitches can ultimately be.” RRB at 37 n.5. And they appear to contend, in reliance on the testimony of Tela’s expert, Dr. Hook, that
112 “single-digit nanometer gate widths” and 40 nanometer gate pitches are within the scope of the claims, although they do not explicitly assert that anything smaller qualifies. RRB at 34, 37. The Staff takes a similar position. SIB at 77. Tela, also citing the testimony of Dr. Hook, contends that the lower bound is “the limit of standard CMOS processing,” which it further specifies as gate widths of 10 nanometers and gate pitches of 40 nanometers. CRB at 39 (internal quotation omitted). The parties therefore appear to agree that the lower bound for gate pitch is 40 nanometers; there does not appear to be any relevant intrinsic evidence, and this dimension is supported by the knowledge of a skilled artisan, as established by Dr. Hook. The parties do not agree on the lower bound for gate width, although they are not far apart, and Tela and Respondents seemingly agree that Dr. Hook’s testimony is authoritative regarding the knowledge of a POSITA. Dr. Hook testified that a “7 nanometer node” is within the scope of the claimed range of gate width, although he admitted it is “beyond today’s manufacturing” abilities. Hr’g Tr. at 1120:20-1122:9. So the claimed ranges are construed as a gate width from about 45 nanometers to 7 nanometers and a gate pitch from about 193 nanometers to 40 nanometers. Much of the briefing on enablement presupposes a priority date of 2006 rather than 2015. Nonetheless, Respondents argue in the alternative that the full scope of the claims cannot be practiced “even today without undue experimentation.” RIB at 68. That argument is meritorious, as consideration of the factors enumerated in In re Wands, 858 F.2d 731, 737 (Fed. Cir. 1988), shows: The quantity of experimentation necessary and the relative skill of those in the art. These factors are related. Dr. Hook does not dispute that it takes the full-time effort of at least 1,000 engineers, 95% of whom have doctorates, and “billions” of dollars in research and development
113 expenses, to reduce the scale of integrated circuit chips by a single process node. Hr’g Tr. at 1105:12-1106:13. This would indeed seem to be “the very definition of ‘undue experimentation.’” RRB at 39. Although such labors are “commonplace” and “business as usual” for the semiconductor industry, as Dr. Hook testified, they are surely far from “routine” within the meaning of Wands. See CIB at 78. And although the level of ordinary skill in the art is neither especially high nor especially low, the level of skill needed to achieve a reduction in scale, as opposed to simply practicing the invention, is clearly well beyond the capabilities of a POSITA. The amount of direction or guidance presented. Even considering the new matter added in 2015, Dr. Hook is correct that the 334 patent is “silent on the process” of resolving the various technical hurdles to scaling down chip size. Hr’g Tr. at 1111:20-25. Tela’s position, that the disclosure of a standard CMOS process is adequate, is unpersuasive. CRB at 40-41. Describing CMOS as a “standard” and “well-known” process provides no guidance whatsoever to a skilled artisan about how to shrink chip size. The specification essentially just presupposes that any technical hurdles in reducing gate width and pitch will eventually be overcome; that is, it leaves entirely to someone else the task of solving the problems preventing a skilled artisan from practicing the full scope of the invention. The presence or absence of working examples and the state of the prior art. As noted in analyzing the written description requirement, all the working examples in the specification pertain to sizes larger than or equal to the claimed range. E.g., 334 patent at 9:4-16. Even the new matter added in 2015 provides only a single working example possessing the upper bounds of the claimed ranges. See id. at 6:38-46. And the state of the prior art was such that no working examples of the smallest width and pitch would have existed as of 2015; again, Dr. Hook admitted at the hearing that the lower bound of the claimed gate width is “beyond today’s manufacturing”
114 abilities. Hr’g Tr. at 1121:18-1122:9. So Dr. Subramanian’s testimony that in 2016, after the priority date, the lowest width and pitch combination commercially available was 22 and 70 nanometers, more than one process node greater than the lower bound of the claimed ranges, stands unrebutted. See RX-0007C at Q/A 157. The nature of the invention. As noted, during prosecution the Examiner specifically suggested removing the 45 and 193 nanometer limitations from the claims, but the applicants declined to do so, and instead traversed their own notice of allowability. See RX-0019 at *7630- 7659. This indicates that the applicants considered the feature ranges to be sufficiently important to the invention that they needed to remain in that application, and in the descendant applications, including the one that issued as the 334 patent. On the other hand, it is not clear why the applicants believed this; Respondents suggest that it was because the applicants wished to avoid prior art, but point to no evidence explicitly supporting such an inference. See RIB at 64. Moreover, the “heart of the invention” appears to be the combination of various chip layers possessing rectilinear features, and not the actual sizes of those features. E.g., 334 patent at 4:30-33 (“a solution is needed for managing lithographic gap issues as technology continues to progress toward smaller semiconductor device feature sizes”), 10:6-7 (the problem “stem[s] from variability introduced by design-dependent unconstrained feature topologies”); Certain Multi-Stage Fuel Vapor Canisters and Activated Carbon Components Thereof, Inv. No. 337-TA-1140, Final Initial Determination at 168 (Jan. 28, 2020) (not reviewed in relevant part). So on balance, this factor weighs slightly against a finding of undue experimentation. The predictability or unpredictability of the art. This factor also weighs against a finding of undue experimentation. Dr. Hook explained it succinctly: “you can do a pretty good job of predicting that a bunch of engineers will arrive at a solution if you give them enough time and
115 enough money.” Hr’g Tr. at 1125:18-1126:11. In fact, semiconductor design and fabrication is so predictable an art that it has historically followed “Moore’s Law”—integrated circuits have halved in area on average once every two years. See 334 patent at 3:59-61; CX-1231C at Q/A 1699. The breadth of the claims. As of 2015 integrated circuits with gate widths and pitches well below 45 and 193 nanometers, respectively, had been fabricated. E.g., JX-0302 at *47 (describing a chip made in 2011 with 22 nm gate width and 80-100 nm gate pitch). But the claims are not limited to what could be made and used in 2015; they include ranges with lower bounds beyond what can be made and used even today. Hr’g Tr. at 1121:18-1122:9. Had the claimed ranges been drafted with the knowledge of a skilled artisan in mind, the breadth of the ranges would likely have been uncontroversial. But that is not the situation presented here, and the breadth of the claims weighs against finding enablement. In sum, the Wands factors are mixed. That the relevant art is predictable weighs against a finding of undue experimentation, but, importantly, that predictability is achieved by tremendous research and development efforts. And the nature of the invention also weighs against undue experimentation, albeit only slightly. Otherwise, the Wands factors weigh in favor of finding that undue experimentation would be needed to practice the full scope of the claims, down to the lower bounds of the claimed ranges of gate width and pitch. Particularly significant is Dr. Hook’s admission at the hearing that the lower bounds are both within the scope of the claims and not manufacturable. See Hr’g Tr. at 1121:18-1122:9. So the “breadth of enablement in the patent specification[] is not commensurate in scope with the claims.” Enzo-Biochem, Inc. v. Calgene, Inc., 188 F.3d 1362, 1377 (Fed. Cir. 1999). Therefore, claims 1, 2, 5, and 15 of the 334 patent are invalid for lack of enablement.
116 3. Intel 14nm Products Respondents contend that the asserted claims of the 334 patent are anticipated, but only by the Intel 14nm Products. RIB at 75-76. As a threshold issue and more specifically, Respondents contend that the “Broadwell” 14nm product is prior art to the 334 patent under 35 U.S.C. § 102(a) and (b), assuming that patent’s priority date is May 13, 2015. Id. Tela presents no argument on this point beyond its assertion that the 334 patent’s priority date is instead 2006. CRB at 42. Intel publicly demonstrated the operation of the Broadwell chip, an Intel 14nm Product, on September 10, 2013, at an Intel Developer Forum. See RX-0174 at *5-6. Based on the transcript (RX-0174) and video (RX-0176) of that forum, Dr. Subramanian opines that the Intel 14nm Products were publicly disclosed no later than the date of the forum, in 2013. See RX- 0007C at Q/A 941. This qualifies as public use more than one year before the application date under the pre-AIA version of 35 U.S.C. § 102(b). See Honeywell Int’l, Inc. v. Universal Avionics Systems Corp., 488 F.3d 982, 998 (Fed. Cir. 2007) (“A barring public use requires a public use more than one year before the patent filing date that employs a completed invention in public, without confidentiality restrictions, and without permitted experimentation.”) (citing 35 U.S.C. § 102(b) (2002)); see also 35 U.S.C. § 102(a)(1) (2015) (post-AIA version of Section 102: “the claimed invention was . . . in public use” more than one year “before the effective filing date”). Therefore, the Broadwell 14nm Product is prior art to the 334 patent. As determined above, the Broadwell 14nm Product infringes claims 1, 2, and 5, but not claim 15, of the 334 patent. Thus, under the principle that an infringing product, if earlier, anticipates (see Upsher-Smith Labs., 412 , F.3d at 1322), claims 1, 2, and 5 of the 334 patent are invalid as anticipated, and claim 15 is not. 4. Kitabayashi in combination with Intel 45nm Products Respondents contend it would have been obvious to a POSITA to combine the teachings of a U.S. patent prior art reference, Kitabayashi, with certain 45nm processor products from
117 respondent Intel, in such a way that meets all limitations of the asserted claims. See RIB at 77- 112. Kitabayashi, U.S. Patent No. 7,200,831, issued on April 3, 2007, and is unquestionably prior art. See 35 U.S.C. § 102(a) (2015) (“the claimed invention was patented” more than one year “before the effective filing date of the claimed invention”). It is also prior art under the pre-AIA version of 35 U.S.C. § 102(e), as Respondents allege; the 334 patent’s invention date is the filing date, May 13, 2015, because of the new matter added at that time, and Kitabayashi was therefore “granted on an application for patent by another filed in the United States before the invention by the applicant for patent.” 35 U.S.C. § 102(e) (2002). Tela does not dispute that Kitabayashi is prior art. See CIB at 80. Whether the Intel 45nm Products qualify as prior art is disputed, however. Respondents contend, presumably on the assumption that the 334 patent is entitled to a 2006 priority date, only that the Intel 45nm Products are prior art under the pre-AIA version of 35 U.S.C. § 102(g). RIB at 77-78. Under that provision, a patent is invalid if “before [the patentee]’s invention thereof, the invention was made in this country by another inventor who had not abandoned, suppressed, or concealed it.” 35 U.S.C. § 102(g)(2) (2002). The Intel 45nm Products were on sale in the U.S. no later than November 12, 2007, under the commercial name “Penryn,” so Respondents have made out a prima facie case that they were “made” and “not abandoned, suppressed, or concealed” before the 334 patent’s 2015 priority date. See RX-0007C at Q/A 224-25 (citing JX-0274 and JX- 0276). Tela does not dispute that the Penryn chip was on sale in the U.S. by November 2007. CIB at 81. Tela instead contends—also presumably on the assumption that the 334 patent has a 2006 priority date—that the Penryn chips were based on a “45nm test chip” that was not commercialized
118 and remains confidential to this day, and which therefore was abandoned, suppressed, or concealed. CIB at 81-82. So most of Tela’s Section 102(g) arguments are irrelevant because they are directed exclusively to the test chip rather than to the Penryn chip. See generally id. at 81-88. But Tela does advance three arguments that seemingly apply separately to the Penryn chip: (1) because the technical details of the Penryn chip have never been adequately publicized, that chip was abandoned, suppressed, or concealed (see CIB at 82-83); (2) Intel was not diligent in reducing the Penryn chip to practice (see CRB at 45-47); and (3) the Penryn chip was not “made in this country by another inventor” (see CIB at 86-87). The first two arguments are foreclosed by Fox Group, Inc. v. Cree, Inc., 700 F.3d 1300 (Fed. Cir. 2012). In that case, the United States Court of Appeals for the Federal Circuit held that “commercialization” of a good embodying a product claim is a “way to prove public disclosure,” even when that commercialization by itself is non-enabling, thus negating any claim of abandonment, suppression, or concealment. 700 F.3d at 1306-07. That is precisely what Intel did here, and Tela’s arguments that Fox Group is inapposite, or that its dissenting opinion should be followed, are unpersuasive. See CRB at 51- 52; CIB at 144 n.12. The Federal Circuit also held that an accused infringer may demonstrate invalidity under Section 102(g) by proving it “reduced its invention to practice first,” without regard to diligence. Id. at 1304. That, too, is precisely what Intel did here, so proof of diligence is not required. See id.; RX-0007C at Q/A 247 (Dr. Subramanian opining that Intel performed a reduction to practice). The third argument is foreclosed by Solvay S.A. v. Honeywell Int’l Inc., 742 F.3d 998 (Fed. Cir. 2014). In that case, involving method claims, Russian engineers “first conceived the invention and reduced it to practice in Russia.” 742 F.3d at 1002. Honeywell, the accused infringer, then “replicated the Russian process by following the information provided by [the
119 Russian engineers], thereby practicing the invention in the United States.” Id. at 1007. The Federal Circuit held that such a later reduction to practice in the United States qualifies as “mak[ing]” the invention “in this country by another inventor,” even though the Russian engineers were not the ones who performed the domestic reduction to practice. Id. And, again, Intel performed a reduction to practice, and did so domestically. See JX-0275 at 5 (the 45nm chip “is being developed by [Intel’s] Logic Technology Development group located in Hillsboro, Oregon”); JX-0278 at *2; RX-0007C at Q/A 247. That Intel has never identified the Penryn chip’s inventors by name is irrelevant, because there is no evidence, or even argument, that the inventors of the 334 patent made the Penryn chip. See CRB at 44 (asserting that the persons who conceived of the test chip are unidentified); CIB at 82. Therefore, the Intel 45nm Products, and more precisely the Penryn chip, are prior art to the 334 patent. As to the merits of the obviousness theory, Kitabayashi discloses “semiconductor integrated circuit wiring” having a “multilayer structure.” JX-0267 at 1:15-16, 2:37. Each successive wiring layer consists of straight-line wiring that is “orthogonal” or “inclined” relative to the previous layer, so that “the wiring traces constitute a grid,” and each successive wiring layer is “connected through vias.” Id. at 5:2, 5:56-58, Figs. 1-9. The lowest wiring layer is “connected to . . . the transistors (circuit elements).” Id. at 5:2-3. The Intel 45nm Products, including the Penryn chip, are described in various documents summarized by Dr. Subramanian. See generally RX-0007C at Q/A 213-336. Dr. Subramanian also provides an element-by-element claim comparison. See generally id. at Q/A 370-462. The Intel 45nm Products comprise gate structures on a semiconductor chip, positioned relative to
120 diffusion regions to form transistor gates. See id. at Q/A 379; RDX-0009C at *108. Above that are metal layers that do not use a “gridded layout.” Id. at Q/A 327; see RDX-0009C at *96. Respondents’ basic contention is that “it would have been obvious to combine Kitabayashi’s gridded metal structure with Intel’s unidirectional gate structures . . . [and] to set the lowest-lying metal layer of Kitabayashi to run orthogonal to the gate direction.” RRB at 57. But Claim 1 also requires “at least five” substantially rectangular first-metal structures positioned on “at least eight first-metal gridlines,” with “adjacent” first-metal structures spaced “less than or equal to 193 nanometers” apart. 334 patent at 30:42-50, 31:3-5. Kitabayashi teaches no particular spacing, and the Intel 45nm Products have neither first-metal gridlines nor consistent spacing, because they are not substantially rectangular. See RX-0007C at Q/A 420-23, 433-34. Dr. Subramanian’s testimony that the Intel 45nm Products have “metal interconnect layers” with a fixed pitch, that a skilled artisan would know to set at 160 nanometers, makes no sense; the conducting structures in those layers are two-dimensional, and therefore either have no pitch at all or two pitches which appear to be different. Id. at Q/A 434; RDX-0009C at *129. And although a 1992 textbook by Maziasz and Hayes, also referenced by Dr. Subramanian, discloses six rectangular first-metal structures, it does not disclose eight gridlines. See RX-0028 at 15, Fig. 1.10; RX-0007C at Q/A 324-325. Therefore, even though a combination of the gate arrangement of the Intel 45nm Products and the gridded metal layers of Kitabayashi comes close to an embodiment of claim 1 of the 334 patent, Tela is correct that there is an element missing from that combination, and from the various additional references on which Respondents rely. See CRB at 59-60. Additionally, Tela argues that the combination of seven gate gridlines and eight first-metal gridlines, perpendicular to each other, is not found in the prior art. See CIB at 90; CRB at 57.
121 This requirement is found in the references to “y-direction” and “x-direction” in the claim limitations “each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline” and “each first-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in an x-direction in a substantially centered manner on an associated first-metal gridline.” 334 patent at cl. 1. Kitabayashi may provide an express motivation to combine the “semiconductor integrated circuit wiring” structures it discloses with “transistors,” i.e., the combination of structures forming the transistors in the Intel 45nm Products. JX-0267 at 5:2-3; CIB at 90 (citing RX-0007C at Q/A 335, 338); RIB at 86-87. But Kitabayashi is silent as to what the transistors look like, how they are oriented, and how many there must be. See generally JX-0267. Dr. Subramanian does not persuasively provide these elements, either. He identifies a region in the Intel 45nm Products, not asserted for purposes of invalidity, which happens to have metal structures more closely resembling rectangles and extending perpendicular to the gate structures. RX-0007C at Q/A 322; RDX-0009C at *96. But in the region of the Intel 45nm Products which is asserted for purposes of invalidity, the first-metal structures largely extend perpendicular to the gate structures and do not resemble rectangles at all. See RDX-0009C at *125, 129, 131, 132, 135, 139; RX-0007C at Q/A 415-446. This is shown below with gate structures in dark green, running vertically, and first-metal structures in light blue, also running largely vertically:
122 RDX-0009C at *125; id. at *135. Dr. Subramanian’s testimony that it was known in 2006 that “metal 1” structures “could” run perpendicular to gate structures is not evidence of motivation either. RX-0007C at Q/A 323-
123 325; see PersonalWeb Techs., LLC v. Apple, Inc., 848 F.3d 987, 993-4 (Fed. Cir. 2017) (“[T]hat reasoning seems to say no more than that a skilled artisan, once presented with the two references, would have understood that they could be combined. And that is not enough: it does not imply a motivation to pick out those two references and combine them to arrive at the claimed invention.”). Indeed, his critical testimony on this point is mostly legalese: “[i]n my opinion, based on the disclosures in both Intel’s 45nm products themselves as well as in well-known textbooks, that running metal 1 perpendicular to the gate direction (or OGD) was a known design choice at the time of the alleged invention, and at a minimum, would have been one of a few known solutions that would yield predictable results and would not require undue experimentation.” Id. at Q/A 325. This opinion is too conclusory to place much weight on it. Dr. Auth testified that Intel “considered” linear first-metal structures orthogonal to the gate structures for the Intel 45nm Products because, among other things, “it made sense to route it OGD so that metal 1 structures could make contact with the gates as well as the sources and drains without having to rely on a local interconnect.” RX-0001C at Q/A 82. But this testimony is also entitled to little weight, for two reasons. First, it describes what Intel apparently “knew,” and not what a person of ordinary skill would have appreciated at the time. Second, it is provided in a somewhat contradictory context. Dr. Auth’s immediate next statement is “[f]or these reasons, at the 45nm process node size, we made the decision to require poly to be unidirectional, as I explained previously.” Id. But both the metal layer and the “poly” gate layer must be unidirectional, as well as orthogonal to each other, and as shown in Dr. Subramanian’s evidence (see, e.g., RDX-0009C at *125, 129, 131, 132, 135, 139), unidirectional metal 1 structures were definitely not chosen for the Intel 45nm Products. Thus, whatever would have “made sense” (i.e.,
124 would have been obvious) with unidirectional first-metal structures, Intel went in a different direction. So Respondents have not clearly and convincingly shown why, even once Kitabayashi and the Intel 45nm Products are combined, a person of ordinary skill would place the lowest, first- metal, layer of Kitabayashi perpendicular or orthogonal to the gate structures in the Intel 45nm Products. In other words, Respondents have not shown “all the elements of [claim 1] are found in a combination of prior art references.” Velander v. Garner, 348 F.3d 1359, 1363 (Fed. Cir. 2003). And, necessarily, they also have not shown “an apparent reason to combine” existing elements with a nonexistent element. KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398, 418 (2007). That is, the combination of Kitabayashi and the Intel 45nm Products, in view of “(1) the scope and content of the prior art, (2) the level of ordinary skill in the art, [and] (3) the differences between the claimed invention and the prior art,” does not make out a prima facie case of obviousness of claim 1. Scanner Techs. Corp. v. ICOS Vision Sys. Corp. N.V., 528 F.3d 1365, 1379 (Fed. Cir. 2008). 5. Becker, and Becker in combination with Greenway Respondents allege that Becker, U.S. Pub. No. US 2007/0210391, which was published on September 13, 2007, renders the claims of the 334 patent obvious under a single-reference theory. See RIB at 112-113. Respondents are correct that Becker is prior art under the pre-AIA version of 35 U.S.C. § 102(b), because it is a printed publication predating the 334 patent’s priority date of May 13, 2015. See id. As with the Intel 14nm Products, Tela advances no argument that Becker is not prior art, beyond its erroneous contention that the 334 patent is entitled to a 2006 priority date. See CIB at 92-93; CRB at 62-63. Respondents also offer an obviousness theory based in a combination of Becker and a printed publication referred to as Greenway, entitled “32nm 1-D Regular Pitch SRAM Bitcell
125 Design for Interference-Assisted Lithography.” RX-0007C at Q/A 94. Greenway predates the 334 patent’s priority date of May 13, 2015, and therefore qualifies as prior art under the pre-AIA version of 35 U.S.C. § 102(b). JX-0286. Tela does not expressly dispute this, although Greenway was published after 2006. See CIB at 93; CRB at 62-63. As to the merits of the obviousness theory, Becker contains a disclosure similar to that of the 731 application and the 334 patent, but, notably, without the additional paragraph constituting new matter. Compare RX-0027 at *22 with 334 patent at 5:49-7:24. Respondents concede that “Becker does not expressly disclose gate widths . . . and gate pitches and other spacing” having the ranges recited in claim 1. RIB at 112-13. Therefore, Becker by itself does not make out a prima facie case of obviousness. Nor does the fact that by 2015 “feature sizes and spacings that fall within” the claimed ranges would have been known to a skilled artisan change this conclusion, because the full extent of the claimed ranges were not known to a skilled artisan at that time, and are still not manufacturable today. Id. As for the combination of Becker and Greenway, Tela’s (erroneous) response is that Becker is not prior art. See CIB at 93; CRB at 62-63. Greenway does disclose certain elements of claim 1 that are not disclosed in Becker, as Dr. Subramanian explains. See RX-0007C at Q/A 939. However, as with the combination of Kitabayashi and the Intel 45nm Products, there is an element missing from the combination of Becker and Greenway. Claim 1 requires a layer of “at least seven gate gridlines,” each containing at least one “substantially rectangular” gate structure, that is, a gate layer of at least seven substantially rectangular structures, each of which “compris[e] a transistor gate.” 334 patent 30:5-14; Order No. 34 at 55. This element is not found in either Becker or Greenway; Becker discloses at most six gate structures, and Greenway apparently discloses only four. See JX-0267 at 5:2-3; RX-0027
126 at Fig. 5. By contrast, the new matter added to the 731 Application describes “at least ten conductive structures,” where “[s]ome of the at least ten conductive structures form at least one transistor gate electrode.” 334 patent at 5:53-56. Dr. Subramanian implicitly concedes that seven gate structures are absent from Becker and Greenway when he opines that “[a]dding more gridlines and gate structures . . . would be mere duplication.” RX-0007C at Q/A 845. Admittedly, this element is found in a prior art reference, namely, one of the designs for the Penryn chip. See RX-0007C at Q/A 375 (citing RDX-0009C at *107C (showing at least eleven gridlines on which gate structures are disposed)). But Respondents do not cite this reference in combination with Becker and Greenway, and a skilled artisan’s knowledge that “mere duplication” might work is not a substitute for actually identifying a prior art element. So, again, Respondents have not shown “all the elements of [claim 1] are found in a combination of prior art references,” and the combination of Becker and Greenway, in view of “(1) the scope and content of the prior art, (2) the level of ordinary skill in the art, [and] (3) the differences between the claimed invention and the prior art,” does not make out a prima facie case of obviousness of claim 1. Velander, 348 F.3d at 1363; Scanner Techs., 528 F.3d at 1379. 6. Secondary Considerations The secondary considerations of non-obviousness are equivocal at best. Tela offers essentially no evidence of skepticism by others and commercial success. See CIB at 95-97. At most it points to joint research and development projects with three entities that did not result in a commercial product. See id.; CX-1231C at Q/A 1820-1851. As for failure by others, Tela cites one instance of such failure, in which a company “attempted to make lithographic friendly designs” in a manner different from the 334 patent’s claims, but could not reduce the chip area enough. See CX-1231C at Q/A 1818-1819. Any long-felt but unmet need seemingly was satisfied by the Intel
127 45nm Products, which used two-dimensional first metal structures. See RX-0007C at Q/A 422- 423; RDX-0009C at *125. There is evidence of copying by Intel, but it is limited to linear first-metal structures oriented perpendicular to the gates. See CX-1231C at Q/A 1855-1861. There is also evidence that licensing resulted in substantial revenues for Tela. See CX-1231C at Q/A 1852-1854. Nonetheless, it is not clear to what extent the licensing was connected to the claims of the 334 patent, as opposed to other licensed patents, or simply to resolve litigation. See RIB at 119-120. So on balance, the secondary considerations of non-obviousness do not change the ultimate conclusion: Respondents have not carried their burden of proving that claim 1 is invalid as obvious, and, by extension, claims 2, 5, and 15, which depend therefrom. Ortho-McNeil Pharm., Inc. v. Mylan Labs., Inc., 520 F.3d 1358, 1365 (Fed. Cir. 2008) (citing In re Fritch, 972 F.2d 1260, 1266 (Fed. Cir. 1992)) (“But if claim 1 is not obvious then claims 6-8 also cannot be obvious because they all depend from a nonobvious claim.”). 7. Covenant Not to Sue In addition to theories of invalidity, Respondents contend there can be no infringement of the 334 patent in light of a covenant not to sue (hereafter, “CNTS”) between Tela and respondent Intel. RIB at 120-121. Respondents argue “Tela agreed Id. (citing RX-0003C at Q/A 43; RX-0054C at *1-2. Because the 334 patent has a priority date of May 13, 2015, Respondents argue it is covered by the CNTS. Id. at 121. Respondents further argue the CNTS does not allow for a patent to simply claim priority on its face to a certain date, “but rather that it [must] ‘claim priority’ in general” according to the strictures of 35 U.S.C. §§ 112, 120. See RRB at 63-64 (citing RX-0054C at *1).
128 Tela and the Staff correctly point out the fatal flaw in this argument. The CNTS states Tela RX-0054C at *1-2; see SIB at 94; CRB at 63. As a matter of contract interpretation, this “claim priority” language is not ambiguous—it refers to claims of priority reflected in an issued patent or application for patent instrument (see RX-0054C at *1 (defining “Company Patent Right”), 2 (defining “Patent Rights”)), and not any sort of established priority. See, e.g., Nat. Alts. Int’l, Inc. v. Iancu, 904 F.3d 1375, 1380 (Fed. Cir. 2018) (citing In re NTP, Inc., 654 F.3d 1268, 1276 (Fed. Cir. 2011)) (“NAI's ‘vesting’ argument conflates properly claiming priority and demonstrating entitlement to priority. Patent claims ‘are not entitled to an earlier priority date merely because the patentee claims priority.’”). To be sure, 35 U.S.C. § 120 “requires that the invention ‘be disclosed in the manner provided by the first paragraph of section 112 . . . .’” (RRB at 64), but the CNTS concerns “claim[s]” of priority, not proof of priority (RX-0054C at *1-2). And to merely claim priority, an application need only “contain[] or [be] amended to contain a specific reference to the earlier filed application.” 35 U.S.C. § 120. There is no dispute that the 334 Patent contains such a reference. As Respondents’ defense depends on an incorrect interpretation of the CNTS, it is not persuasive and the defense fails. V. U.S. PATENT NO. 10,186,523 A. Level of Ordinary Skill in the Art As with the 334 patent, a person having ordinary skill in the art of the 523 patent at the time of invention “would have: (1) a bachelor’s degree in electrical engineering or computer engineering with at least three years of experience in the field of semiconductor layout technology
129 and integrated circuit design; (2) a master’s degree in electrical engineering or computer engineering with at least two years of experience in the same field; (3) a bachelor’s degree in physics or materials science with at least five years of experience in the same field; or (4) a comparable combination of education and experience.” Order No. 34 at 8. The parties do not challenge this determination (see RIB at 15; SIB at 24; see generally CIB; CRB; RRB; SRB), and it is applied throughout this initial determination. B. Claims-at-Issue Claims 1-11, 14-20, and 25-28 of the 523 patent are at issue in this investigation, either through allegations of infringement or of the domestic industry technical prong. See CIB at 102, 135. 8 These claims are reproduced below along with additional claim limitation identifiers: 1. [1a] A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, the gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process, [1b] the gate electrode feature layout shapes positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein all gate gridlines extend in a y-direction, wherein adjacent gate gridlines are separated from each other by a gate pitch, each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated gate gridline, [1c] wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon, [1d] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one 8 Again, Tela does not identify claim 25 as infringed, but it is implicated by asserted dependent claim 26.
130 transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type; [1e] at least six gate contact structures formed within the region of the semiconductor chip, the at least six gate contact structures formed in part utilizing corresponding at least six gate contact structure layout shapes as an input to a lithography process, wherein at least six gate electrode features within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six gate contact structures, [1f] each of the at least six gate contact structure layout shapes having a substantially rectangular shape with a corresponding length greater than a corresponding width and with the corresponding length oriented in an x- direction, each of the at least six gate contact structure layout shapes positioned and sized to overlap both edges of the gate electrode feature layout shape corresponding to the gate electrode feature to which it is in physical and electrical contact; and [1g] a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, [1h] wherein the first-metal layer includes first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, [1i] wherein the first-metal structure layout shapes are positioned in accordance with a first-metal vertical grid, the first-metal vertical grid including at least eight first-metal gridlines, wherein all first-metal gridlines extend in the x-direction, wherein at least eight of the at least eight first- metal gridlines have at least one first-metal structure layout shape positioned thereon, each first-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner on an associated first-metal gridline, [1j] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form part of a logic circuit, wherein electrical connections within the logic circuit collectively include at least five first-metal structures corresponding to at least five first-metal structure layout shapes respectively positioned on at least five different first-metal gridlines, [1k] wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein some diffusion
131 regions within the region of the semiconductor chip are physically and electrically contacted by at least one diffusion contact structure, [1l] the at least one diffusion contact structure formed in part utilizing corresponding at least one diffusion contact structure layout shape as an input to a lithography process, [1m] each diffusion contact structure layout shape within the region positioned in a substantially centered manner along an associated diffusion contact gridline of a diffusion contact grid, the diffusion contact grid having a diffusion contact gridline-to-diffusion contact gridline spacing measured in the x-direction equal to the gate pitch. 2. [2a] The semiconductor chip as recited in claim 1, further comprising: a second-metal layer formed above the first-metal layer within the region of the semiconductor chip, the second-metal layer positioned second in the stack of metal layers counting upward from top surfaces of the gate electrode features, the second-metal layer separated from the first-metal layer by at least one insulator material, [2b] the second-metal layer including second-metal structures formed in part based on corresponding second-metal structure layout shapes used as an input to a lithography process, the second-metal layer layout shapes positioned in accordance with a second-metal horizontal grid, the second- metal horizontal grid including at least eight second-metal gridlines, [2c] wherein all second-metal gridlines extend in the y-direction, wherein at least eight of the at least eight second-metal gridlines have at least one second-metal structure layout shape positioned thereon, each second-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated second-metal gridline, [2d] wherein some second-metal structures within the region are electrically connected to at least one first-metal structure within the region through at least one first-metal-to-second-metal via structure, each first-metal-to- second-metal via structure within the region formed in part based on corresponding first-metal-to-second-metal via structure layout shape used as an input to a lithography process, each first-metal-to-second-metal via structure layout shape within the region positioned in a substantially centered manner along an associated second-metal gridline. 3. The semiconductor chip as recited in claim 2, wherein each first-metal structure layout shape in the region has a width measured in the y-direction that is either a first width or a second width, the second width different than the first width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the
132 first width, the first-metal layer including at least one first-metal structure formed in part by a first-metal layout shape that has the second width. 4. The semiconductor chip as recited in claim 3, wherein at least one gate electrode feature within the region that forms at least one gate electrode of at least one transistor of the first transistor type and does not form a gate electrode of a transistor of the second transistor type is electrically connected to at least one gate electrode feature within the region that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type through an electrical connection that includes at least one first-metal structure and at least one second-metal structure. 5. The semiconductor chip as recited in claim 2, wherein the at least six gate contact structure layout shapes are positioned in accordance with a contact vertical grid, the contact vertical grid including contact gridlines extending in the x-direction, each of the at least six gate contact structure layout shapes positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated contact gridline, and at least two of the at least six gate contact structure layout shapes positioned to also extend lengthwise in the x-direction in a substantially centered manner along a corresponding first-metal gridline. 6. [6a] The semiconductor chip as recited in claim 2, wherein each first- metal structure layout shape in the region has a width measured in the y- direction that is one of a plurality of widths, the plurality of widths including a first width and a second width, the first width smaller than the second width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the first width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the second width, [6b] wherein each first-metal-to-second-metal via structure that contacts a first-metal structure formed in part by a first-metal structure layout shape having the first width is formed at least in part by a first-metal-to-second- metal via structure layout shape that is intersected by a corresponding first- metal gridline. 7. The semiconductor chip as recited in claim 6, wherein each first-metal- to-second-metal via structure layout shape is intersected by a corresponding first-metal gridline. 8. The semiconductor chip as recited in claim 2, wherein adjacent second- metal gridlines are separated from each other by a second-metal pitch, the second-metal pitch equal to the gate pitch, the second-metal horizontal grid aligned with the diffusion contact grid.
133 9. The semiconductor chip as recited in claim 8, wherein all second-metal structure layout shapes in the region of the semiconductor chip have a same width as measured in the x-direction. 10. [10a] The semiconductor chip as recited in claim 9, further comprising: a third-metal layer formed above the second-metal layer within the region of the semiconductor chip, the third-metal layer positioned third in the stack of metal layers counting upward from top surfaces of the gate electrode features, the third-metal layer separated from the second-metal layer by at least one insulator material, [10b] the third-metal layer including third-metal structures formed in part based on corresponding third-metal structure layout shapes used as an input to a lithography process, the third-metal layer layout shapes positioned in accordance with a third-metal vertical grid, the third-metal vertical grid including at least eight third-metal gridlines, [10c] wherein all third-metal gridlines extend in the x-direction, wherein at least eight of the at least eight third-metal gridlines have at least one third- metal structure layout shape positioned thereon, each third-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated third-metal gridline, [10d] wherein some third-metal structures within the region are electrically connected to at least one second-metal structure within the region through at least one second-metal-to-third-metal via structure, each second-metal- to-third-metal via structure within the region formed in part based on corresponding second-metal-to-third-metal via structure layout shape used as an input to a lithography process, wherein at least one second-metal-to- third-metal via structure layout shape within the region is positioned in a substantially centered manner along an associated third-metal gridline. 11. The semiconductor chip as recited in claim 10, wherein each second- metal-to-third-metal via structure layout shape is intersected by a corresponding second-metal gridline. . . . . 14. The semiconductor chip as recited in claim 1, wherein at least one of the at least six gate contact structures is in physical and electrical contact with, and is substantially centered in the x-direction on, a gate electrode feature within the region that forms at least one gate electrode of at least one transistor of the first transistor type and that does not form a gate electrode of a transistor of the second transistor type.
134 15. The semiconductor chip as recited in claim 1, wherein each of the at least six gate contact structure layout shapes is intersected by a corresponding gate gridline. 16. The semiconductor chip as recited in claim 1, wherein the first-metal layer includes at least eight first-metal structure layout shapes positioned on four first-metal layer gridlines such that a different two of the at least eight first-metal structure layout shapes is positioned on each of the four first- metal layer gridlines, wherein each of the at least eight first-metal structure layout shapes is positioned next to and spaced apart from at least one other first-metal structure layout shape at a first-metal pitch. 17. The semiconductor chip as recited in claim 1, wherein the at least eight of the at least eight first-metal gridlines that have at least one first-metal structure layout shape positioned thereon are spaced at a first-metal pitch. 18. [18a] The semiconductor chip as recited in claim 1, further comprising: a second-metal layer formed above the first-metal layer within the region of the semiconductor chip, the second-metal layer positioned second in the stack of metal layers counting upward from top surfaces of the gate electrode features, the second-metal layer separated from the first-metal layer by at least one insulator material, the second-metal layer including second-metal structures formed in part based on corresponding second- metal structure layout shapes used as an input to a lithography process, the second-metal structure layout shapes positioned in accordance with a second-metal horizontal grid, the second-metal horizontal grid including at least eight second-metal gridlines, wherein all second-metal gridlines extend in the y-direction, wherein at least eight of the at least eight second- metal gridlines have at least one second-metal structure layout shape positioned thereon, each second-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated second-metal gridline; and [18b] a third-metal layer formed above the second-metal layer within the region of the semiconductor chip, the third-metal layer positioned third in the stack of metal layers counting upward from top surfaces of the gate electrode features, the third-metal layer separated from the second-metal layer by at least one insulator material, the third-metal layer including third- metal structures formed in part based on corresponding third-metal structure layout shapes used as an input to a lithography process, the third-metal structure layout shapes positioned in accordance with a third-metal vertical grid, the third-metal vertical grid including at least eight third-metal gridlines, wherein all third-metal gridlines extend in the x-direction, wherein at least eight of the at least eight third-metal gridlines have at least one third-metal structure layout shape positioned thereon, each third-metal structure layout shape in the region having a substantially rectangular shape
135 and positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated third-metal gridline. 19. [19a] The semiconductor chip as recited in claim 18, wherein each first- metal structure layout shape in the region has a width measured in the y- direction that is one of a plurality of widths, the plurality of widths including a first width and a second width, the first width smaller than the second width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the first width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the second width, [19b] wherein each first-metal-to-second-metal via structure that contacts a first-metal structure formed in part by a first-metal structure layout shape having the first width is formed at least in part by a first-metal-to-second- metal via structure layout shape that is intersected by a corresponding first- metal gridline. 20. The semiconductor chip as recited in claim 18, wherein some third- metal structures within the region are electrically connected to at least one second-metal structure within the region through at least one second-metal- to-third-metal via structure, each second-metal-to-third-metal via structure formed at least in part by a second-metal-to-third-metal via structure layout shape that is intersected by a corresponding second-metal gridline. . . . . 25. The semiconductor chip as recited in claim 1, wherein the at least four transistors of the first transistor type are collectively separated from the at least four transistors of the second transistor type by an inner region that does not include another transistor. 26. The semiconductor chip as recited in claim 25, wherein at least one of the at least six gate contact structure layout shapes is positioned over the inner region and forms a gate contact structure that is in physical and electrical contact with, and is substantially centered in the x-direction on, a gate electrode feature within the region that forms at least one gate electrode of at least one transistor. 27. [27a] A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, [27b] the gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process, [27c] the gate electrode feature layout shapes positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch,
136 [27d] each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in a y- direction in a substantially centered manner along an associated gate gridline, [27e] wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon, [27f] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, [27g] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type; [27h] a number of gate contact structures formed within the region of the semiconductor chip, the gate contact structures formed in part utilizing corresponding gate contact structure layout shapes as an input to a lithography process, wherein each gate electrode feature that forms any transistor gate electrode within the region has a respective top surface in physical and electrical contact with a corresponding gate contact structure formed at least in part from a gate contact structure layout shape having a substantially rectangular shape, [27i] wherein each gate contact structure that contacts a given gate electrode feature that forms any transistor gate electrode does not contact another gate electrode feature, wherein any gate contact structure layout shape that has a corresponding length greater than or equal to a corresponding width is oriented to have its corresponding length extend in an x-direction; and [27j] a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, [27k] the first-metal layer including first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, [27l] wherein each transistor within the region is formed in part by a corresponding diffusion region, each diffusion region formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process, wherein each diffusion region that forms part of any
137 transistor within the region is formed at least in part by a corresponding diffusion region layout shape that has a substantially rectangular shape, [27m] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least two first-metal structures form portions of one or more electrical connections within the multiplexer or the latch. 28. [28a] A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, [28b] the gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process, [28c] the gate electrode feature layout shapes positioned in accordance with a gate horizontal grid that includes a number of gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch, [28d] each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in a y- direction in a substantially centered manner along an associated gate gridline, [28e] wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon, [28f] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, [28g] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type; [28h] a number of gate contact structures formed within the region of the semiconductor chip, the gate contact structures formed in part utilizing corresponding gate contact structure layout shapes as an input to a lithography process, wherein each of at least six gate electrode features within the region has a respective top surface in physical and electrical contact with a corresponding gate contact structure formed at least in part from a gate contact structure layout shape having a substantially rectangular shape, [28i] wherein each gate contact structure is centered in an x-direction on the gate electrode feature with which it physical contacts,
138 [28j] wherein each gate contact structure layout shape that has the substantially rectangular shape has a corresponding length greater than or equal to a corresponding width and is oriented to have its corresponding length extend in the x-direction, wherein each of the number of gate contact structures is in physical contact with only one of any of the gate electrode features; and [28k] a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, [28l] the first-metal layer including at least two first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, the at least two first-metal structures forming portions of one or more electrical connections within the region of the semiconductor chip, [28m] wherein each transistor within the region is formed in part by a corresponding diffusion region, each diffusion region formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process, wherein each diffusion region that forms part of any transistor within the region is formed at least in part by a corresponding diffusion region layout shape that has a substantially rectangular shape. See 523 patent at cls. 1-11, 14-20, 25-28 (annotated). C. Claim Construction As part of the Markman process, the following terms of the 523 patent were construed, either as agreed between the parties or as determined by Order No. 34: Claim Term Construction “a lithography process” “a process by which a pattern is imprinted on a resist or semiconductor wafer using light as a mask” “gate electrode” “that portion of a gate electrode feature that forms a transistor gate” “gate electrode feature(s)” / “gate structure(s)” “a feature comprising a transistor gate” “diffusion region(s)” “selected portions of the substrate within which impurities have been introduced to form the
139 source or drain of a transistor” “[gate horizontal / first-metal vertical grid]; [second-metal horizontal] grid; [contact vertical] grid; [third-metal vertical] grid; [diffusion contact] grid” “projected gridlines used at least during the layout stage of integrated circuit manufacturing” “[gate / metal / contact] gridline(s)” “one of the lines making up a grid” “gate pitch” “center-to-center separation distance between adjacent gate features” See generally Order No. 34 at 47, 52, 55, 56, 59, 60, 62. As with the 334 patent, “contact structure(s)” and “gate contact structure(s)” were not construed. Id. at 61. The parties do not explicitly identify these terms, or any others, as requiring construction. See RIB at 15-16; SIB at 23-24; see generally CIB; CRB; RRB; SRB. Thus, “contact structure(s)” and “gate contact structure(s)” are addressed below in the infringement and validity determinations to the extent required. D. Infringement According to Tela’s post-hearing briefing, the use, manufacture, or sale of the following Accused Products are alleged to infringe the asserted claims of the 523 patent: Claims Accused Products Alleged to Infringe 1-11, 14-20, 25, 26 Intel 14nm Products 1-7, 14-20, 25, 26 Intel 10nm Products See CIB at 102. For the reasons discussed below, Tela has shown infringement for the Broadwell, Skylake, Kaby Lake, Coffee Lake, and Cascade Lake models of Intel 14nm Products under all of the asserted claims, and the Intel 10nm Products under all of the asserted claims.
140 1. Undisputed Claims Respondents do not contest Tela’s claims of infringement under claims 2-11, 14-20, 25, and 26, apart from their dependency on claim 1, for which infringement is disputed. See RIB at 121-44; RRB at 64-79. The Staff similarly has no dispute as to these claims. See SIB at 109; SRB at 34-42. In view of the testimony of Dr. Foty that all the relevant Accused Products include the limitations recited in these claims, those identified Accused Products meet the limitations of the dependent claims as alleged. See CX-1144C at Q/A 1030-1450, 2135-2385; CIB at 123-135. 2. Disputed Claims Respondents do, however, contest Tela’s claims of infringement of independent claim 1. See RIB at 121-144. The Staff similarly contests infringement of this claim. See SIB at 98-109. For the reasons discussed below, Tela has shown infringement of claim 1 for the Intel 10nm Products and certain of the Intel 14nm Products. For reference, claim 1 of the 523 patent requires: 1. [1a] A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, the gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process, [1b] the gate electrode feature layout shapes positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein all gate gridlines extend in a y-direction, wherein adjacent gate gridlines are separated from each other by a gate pitch, each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated gate gridline, [1c] wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon, [1d] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate electrode feature layout shape within the region corresponds to a
141 gate electrode feature that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type; [1e] at least six gate contact structures formed within the region of the semiconductor chip, the at least six gate contact structures formed in part utilizing corresponding at least six gate contact structure layout shapes as an input to a lithography process, wherein at least six gate electrode features within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six gate contact structures, [1f] each of the at least six gate contact structure layout shapes having a substantially rectangular shape with a corresponding length greater than a corresponding width and with the corresponding length oriented in an x- direction, each of the at least six gate contact structure layout shapes positioned and sized to overlap both edges of the gate electrode feature layout shape corresponding to the gate electrode feature to which it is in physical and electrical contact; and [1g] a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, [1h] wherein the first-metal layer includes first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, [1i] wherein the first-metal structure layout shapes are positioned in accordance with a first-metal vertical grid, the first-metal vertical grid including at least eight first-metal gridlines, wherein all first-metal gridlines extend in the x-direction, wherein at least eight of the at least eight first- metal gridlines have at least one first-metal structure layout shape positioned thereon, each first-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner on an associated first-metal gridline, [1j] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form part of a logic circuit, wherein electrical connections within the logic circuit collectively include at least five first-metal structures corresponding to at least five first-metal structure layout shapes respectively positioned on at least five different first-metal gridlines,
142 [1k] wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein some diffusion regions within the region of the semiconductor chip are physically and electrically contacted by at least one diffusion contact structure, [1l] the at least one diffusion contact structure formed in part utilizing corresponding at least one diffusion contact structure layout shape as an input to a lithography process, [1m] each diffusion contact structure layout shape within the region positioned in a substantially centered manner along an associated diffusion contact gridline of a diffusion contact grid, the diffusion contact grid having a diffusion contact gridline-to-diffusion contact gridline spacing measured in the x-direction equal to the gate pitch. 523 patent at cl. 1 (annotated). Several disputes exist between the parties concerning whether Tela has sufficiently shown the Accused Products meet various limitations of the claim. These are addressed below. In view of the testimony of Dr. Foty that the Accused Products meet those remaining limitations of claim 1 which are not in dispute, the Accused Products have been shown to meet them as alleged. See CX-1144C at Q/A 596-1028, 1876-2133; CIB at 102-123. a. Gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process First, Respondents and Staff dispute that “the gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process” is met in the Intel 14nm Products and the Intel 10nm Products. RIB at 121-132, 143; SIB at 98- 105. For this limitation, Tela, through its expert, identifies certain Intel layout shapes as meeting the “gate electrode feature layout shapes” element. See CIB at 102-10 (citing, inter alia, CX- 1144C at Q/A 683-745), 104 (citing, inter alia, CX-1144C at Q/A 1909-1941). One example of these gate electrode layout shapes, for the cell of certain Intel 14nm Products, is shown below:
143 CDX-0008C at *2; see CX-1144C at Q/A 616. Tela argues “[these] gate electrode feature layout shapes are an input to a lithography process because they are used to generate the set of masks used to pattern the gate electrode features onto the semiconductor chip.” CIB at 103 (citing CX- 1144C at Q/A 377-378, 391, 454-456, 675-682). It is these, Tela contends, which are “then used to lithographically pattern features onto a photoresist that is used to define the particular patterns specified by the layout onto the chip through additional processing steps.” Id. (citing CX-1144C at Q/A 377-378, 391, 454-456, 675-682); see CRB at 67. Tela disputes that the shapes contained on the mask need to correlate or be “essentially identical” to the gate structure layout shapes, as this would be an attempt to limit the claims of the 523 patent to just one of its disclosed embodiments. CIB at 107 (citing Liebel-Flarsheim, 358 F.3d 898; 523 patent at Fig. 13A; CX- 1144C at Q/A 130; Hr’g Tr. at 853:24-855:8); see id. at 108 (“The language ‘formed in part based on corresponding gate electrode feature layout shapes,’ merely requires the layout shape to be one part of forming the gate electrode features.”). Lastly, Tela claims “[t]here is no dispute that the gate electrode features in the Intel 14nm and 10nm Products correspond to the gate electrode
144 feature layout shapes specified by the layout” (CIB at 110 (citing CX-1144C at Q/A 391, 427; Hr’g Tr. at 751:19-753:13, 754:4; RX-0007C at Q/A 46)), and notes there is “no dispute that Intel’s M0 layout shapes are an input to a lithography process, despite the fact that (CRB at 68 (citing CX-1144C at Q/A 330-348)). In opposition, Respondents argue Tela’s identification of layout shapes must fail because “it is undisputed that in the accused process nodes Intel RIB at 121-122 (citing Hr’g Tr. at 720:7-11; 980:18-22). Rather, Respondents urge “the dimensions of Intel’s gates are defined using Id. at 122 (citing Hr’g Tr. at 719:15-720:11). Respondents reason: the identified gate layout shapes are not “used as an input” to a lithography process as claimed, and the Accused Products do not practice this limitation. RX-0014C (Subramanian) at Q/A 295, 325. Id. Respondents emphasize non-infringement based on the idea that the Asserted Patents, including the 523 patent, are intended to solve problems with a process (lithography) that Intel simply no longer uses because of the small size of its process nodes See generally id. at 122-128 (citations omitted), 130; RRB at 64-65. More specifically, Respondents argue Tela’s identified layout shapes are not those that Intel actually inputs into lithography—those would be the shown in the below demonstrative:
145 RIB at 128 (citing RDX-0016C at *149). Respondents contend the only “input[s]” to lithography are the shapes on the masks used: “the shapes ‘used as an input to a lithography process’ are those shapes that are actually input into a lithography process, i.e., the shapes on the lithography mask.” See RIB at 130-131 (citing, inter alia, RX-1662C at 55:8-18; RX-0014C at Q/A 343-345; RX- 1660C at 40:12-15). Yet, Respondents caution, these patterns cannot meet the claims “because they are not the recited gate layout shapes,” among other reasons. See RIB at 129 (citing RX- 0014C at Q/A 314-316, 320-324); RRB at 69. Importantly, Respondents claim “[t]he CIB at 129 (citing Hr’g Tr. at 720:12-20); RRB at 66 (citing Hr’g Tr. at 716:19-718:4). In their reply brief, they similarly claim “Intel’s gate layout shapes RRB at 65. Respondents argue Intel’s
146 Id. (citing RX-0008C at Q/A 6, 100-102, 122; Hr’g Tr. at 716:19-718:4). The Staff agrees with each of Respondents’ non-infringement positions. See generally SIB at 98-105. The Staff views Tela’s theory as “rel[ying] on drawn poly layouts shapes from the design phase to meet this limitation. But it is undisputed that Intel’s drawn poly layout shapes are not used during lithography in the fabrication phase.” SIB at 98 (citing Hr’g Tr. at 720:7-11, 980:18-22; RX-0008C at Q/A 110-117) (emphasis in original). The limitation is met. There is no dispute that the See RX-0008C at Q/A 6; CIB at 103 (citing CX-1144C at Q/A 377-378, 391, 454-456, 675-682); RRB at 65-66. In describing the three mask shapes reproduced above in RDX-0016C at *149, Dr. Subramanian correctly states that (RX-0014C at Q/A 310), but he does not state they Intel witness Hr’g Tr. at 1014:2-20. Further, Dr. Subramanian himself effectively admitted according to where gate structures are positioned in the design layout. Compare Hr’g Tr. at 913:2-917:11 with id. at 918:20-23. Dr. Auth testified similarly. See id. at 751:19-756:6 (discussing RDX-0010C at *22). Thus, there is no real merit to
147 Respondents’ characterization that the layout designs are “not an input to the mask creation process.” RRB at 66 (emphasis added). To the extent resolution of this dispute requires further construction of the claim language, persons of ordinary skill in the art would surely consider the layout designs as “an input to a lithography process,” even though there are other, more direct inputs. More precisely, a plain reading of the claim is that “layout shapes” are “input[s] to a lithography process,” even if those shapes are used to configure other mask shapes more directly linked to fabrication—a process Respondents call an “indirect chain of software algorithms.” RRB at 66. Moreover, the term “layout shape” explicitly appears in the claim as that which is “used as an input,” the claim language expressly recites that the features are “based in part” on those layout shapes, and Tela’s identified images have consistently been referred to by all parties as layout shapes. Respondents have cited no intrinsic evidence to show that “an input” should be construed more narrowly, or that the images Tela identifies are not “layout shapes.” As to the Staff’s argument that the shapes “from the design phase” cannot meet the limitation because they are not used “in the fabrication phase,” those shapes are still inputs to a lithography process. In fact, the Staff’s argument could also be applied to the actual mask shapes (i.e., that which are contained in files (see RX-0008C at Q/A6))—which are indisputably inputs to a lithography process—because they are not themselves used for fabrication, but are instead used to create physical masks which are put into the lithography machine, as explained by Intel witness Dr. Auth and shown below: Q. Turning to RDX-0010.0008, what exactly is a mask? A. A lithographic photomask (or just “mask”) is a quartz plate partially covered with a pattern defined by a chrome film. In each lithography module during fabrication, a different mask will be fed into the lithography machine to create the desired pattern for that stage of fabrication. This image is from the video RDX-0018.
148 Q. How are Intel’s masks manufactured? A. Q. You mentioned these masks are fed into a lithography machine. Turning to RDX-0010.0009, what does a lithography machine look like? A. This is an image captured from a video RDX-0019. It shows the insides of a lithography machine The purple color indicates where light is being shone through a sequence of mirrors, through a mask, and onto a wafer below.
149 RX-0008C at Q/A 24-26; RDX-0010 at *8, 9. Other witnesses testified that there are other inputs to the lithography process, including Tela witnesses John Malecki (RX-1660C at 40:12-15 (“Q. From Tela’s point of view, the input to the lithography process would be the GDS2 files that specify the mask shapes? A. Yes. Yes.”)) and Dhrumil Gandhi (see RIB at 131 (citing RX-0014C at Q/A 344; RX-1662C at 55:8-12) (GDSII file shapes are OPC-modified before mask creation)), and Dr. Subramanian (RX-0014C at Q/A 611 (“if OPC is applied, the input to the lithography process would be the OPC shapes to meet the claims”)). With this understanding, Respondents’ and the Staff’s additional arguments regarding are irrelevant. The limitation only requires the “gate electrode features” to be “formed in part” by a lithography process which takes into account or “use[s]” gate feature layout shapes (523 patent at cl. 1)—an act which Respondents acknowledge is the first step in the process (see, e.g., RX-0008C at Q/A 103; RX-0014C at Q/A 295; RRB at 65). Thus, the limitation is met in the Accused Products.
150 b. Gate electrode feature layout shapes positioned in accordance with a gate horizontal grid Second, the Staff, but not Respondents, disputes whether “gate electrode feature layout shapes positioned in accordance with a gate horizontal grid” is met in the Intel 14nm Products and Intel 10nm Products. SIB at 105. Order No. 34 construed “grid” as “projected gridlines used at least during the layout stage of integrated circuit manufacturing.” Order No. 34 at 59. For this limitation, Tela again refers to Intel’s alleged “1-D gridded approach” and explains that for the Intel 14nm Products “defines the ‘gate horizontal grid,’ and the gate electrode feature layout shapes are positioned and centered along gate gridlines in the y-direction” (CIB at 102 (citing, inter alia, CX-1144C at Q/A 683-745; CPX-0497C at -762; RX-0008C at Q/A 138; Hr’g Tr. at 801:1-802:7); CRB at 69), and a similarly defines the grid in the Intel 10nm Products (CIB at 104-105 (citations omitted); CRB at 69). Tela provides the following two examples from 14nm and 10nm layout files: CIB at 103 (citing CDX-0008C at *12), 105 (citing CDX-0010C at *6).
151 The Staff contends that “[b]ecause Intel designers use a to place the gate and metal features in accordance with the pitch and spacing requirements as set forth by the design rules, Intel’s 14nm and 10nm Accused Products do not practice this limitation, as Dr. Foty admits.” SIB at 105 (citing CX-1144C at Q/A 552; Hr’g Tr. at 399:4-400:19). As determined above with respect to the similar limitation in the 334 patent, this limitation is met in the Accused Products. The layout files cited by Tela and Dr. Foty show between the gate electrode feature layout shapes—i.e., their positioning is in a grid. And Intel documentation shows this arrangement, or positioning, was “in accordance” with a planned layout (i.e., not happenstance). That Intel also uses a different, 1nm drawing grid for designers, as the Staff argues, is beside the point. See Hr’g Tr. at 399:15-400:9. c. First-metal structure layout shapes are positioned in accordance with a first-metal vertical grid Third, Respondents and Staff dispute whether “first-metal structure layout shapes are positioned in accordance with a first-metal vertical grid” is met in the Intel 14nm Products and Intel 10nm Products. RIB at 132-141, 143; SIB at 105-106. For this limitation, Tela again refers to a “1-D gridded approach” within the Accused products and explains, per design rules, that the first-metal structures are CIB at 115 (citing, inter alia, CX-1144C at Q/A 330-331, 887-916; CPX-0497C at -780), 117 (citing CX-1144C at Q/A 358-362, 2032-2051; CPX-0341C at -5851; CPX-0097C at -151). Additionally, Tela argues the design rules, as discussed above, specify See id. at 116, 117 (citations omitted).
152 Respondents argue, as they did with the corresponding limitation of the 334 patent, that the See RIB at 133-136, 143. Again, Respondents emphasize (id. at 136 (citing Hr’g Tr. at 728:2-16)) as resulting in (id. (citing Hr’g Tr. at 726:9-727:12; RX-0008C at Q/A 136-144); RRB at 72-73). According to Respondents, “it is undisputed that Intel’s actual Metal-0 features . . . . Accordingly, based on Dr. Foty’s own definition of the function of a ‘grid,’ Intel does not practice the first metal ‘grid’ limitation.” RIB at 137 (citing Hr’g Tr. at 200:1-6) (emphasis in original). Respondents also argue that Dr. Foty and Tela cannot show the presence of a “grid” on layout file images unless the gridlines are a part of those files. See id. at 138 (“Given that unavoidable fact, in order to conjure up an alleged grid, Dr. Foty is forced to draw his own dotted lines over the shapes . . . .”), 141 (“Dr. Foty’s ex-post drawing of dotted lines along shapes that have already been positioned cannot meet a construction that requires Intel to have projected those gridlines during layout.”); RRB at 72 . . . . Tela has no answer for this fundamental flaw . . . .”), 76 (“[T]he point remains the same— ”), 77-79. The Staff agrees with Respondents’ positions on the issue. See SIB at 105-106 (“[T]here is no defined ‘grid’ that shapes must be positioned in accordance with—whether by uniform pitch or otherwise.”); SRB at 40-41 (“In the Staff’s view, because Intel does not define any ‘grid’ for the Metal-0 shapes to be positioned along, the Accused Products also do not satisfy the claimed requirement that the ‘first-metal structure layout shapes are positioned in accordance with a first-metal vertical grid.’”).
153 As with the ’334 patent, the limitation is met in the Accused Products. The layout files cited by Tela and Dr. Foty show See CX-1144C at Q/A 887-900, 2033-2043; CDX-0008C at *62-67; CDX-0010C at *37-39. As to Respondents’ argument that “[u]ltimately, Tela effectively interprets the claims to require nothing more than rectangular, parallel shapes— while improperly ignoring the additional grid limitations, which are indisputably not met” (RRB at 73), there is nothing more to a “grid” than an arrangement of rectangular, parallel shapes. Inasmuch as the term “grid” requires construction, that is its plain and ordinary meaning. Also as with the 334 patent, requiring a uniform pitch between these layout shapes per a construction of “grid” (see, e.g., RIB at 137 (“it is undisputed that Intel’s actual Metal-0 layer does not meet the requirement of having uniformly spaced feature locations (i.e., gridlines)”); RRB at 74 (“Intel does not practice the Metal-0 limitation because it is undisputed that the Metal-0 layer’s layout shapes are not restricted to regularly spaced gridlines.”)) is inappropriate. The first-metal “grid” of claim 1 is not bound by any such restriction as opposed to, for example, claim 8, which requires a second-metal layer grid defined by “a second-metal pitch, the second-metal pitch equal to the gate pitch,” and claim 17, which requires eight first-metal gridlines “spaced at a first-metal pitch.” Id. at cls. 8, 17 (emphases added). Under principles of claim differentiation, it would thus be improper to read in a pitch (i.e., the same pitch), or any defined amount of pitch, into the basic claim term of “grid.” Curtiss-Wright, 438 F.3d at 1380; see Karlin Tech., Inc. v. Surgical Dynamics, Inc., 177 F.3d 968, 971-72 (Fed. Cir. 1999) (“different words or phrases used in separate claims” are presumed to indicate “the claims have different meanings and scope”). Accordingly, the limitation is met.
154 d. Each gate gridline has at least one gate electrode feature layout shape positioned thereon Fourth, Respondents dispute whether “each gate gridline has at least one gate electrode feature layout shape positioned thereon” is met in the Intel 14nm Products and Intel 10nm Products, whereas the Staff only disputes the limitation for the Intel 10nm Products. RIB at 141- 144; SIB at 107. For this limitation, Tela incorporates its discussion of the same limitation for the 334 patent. See CIB at 110; CRB at 69. In opposition, Respondents note “gate electrode feature” is construed the same as “gate structure” in the 334 patent—a “feature comprising a transistor gate”—and Tela relies on the same gridlines for the 523 patent as it did for the 334 patent. See RIB at 141-142. Respondents thus incorporate their argument as to non-infringement of the 334 patent. See id. at 141-144; RRB at 79. The Staff similarly adopts its positions as in the 334 patent—the limitation is met for the Intel 14nm Products but not for the Intel 10nm Products. See SIB at 107; SRB at 41. For the Intel 10nm Products, the Staff notes Tela fails to acknowledge that Dr. Foty identified more gridlines than the seven the claim requires, the result of which is a gridline clearly not including a gate electrode feature. See SRB at 41 (citing CDX-0010C at *12). Tela has identified and relies on the same gridlines for each cell as it did under the 334 patent. See CX-1144C at Q/A 725-733, 1932-1937; CDX-0008C at *9-21; CDX-0010C at *6-13. Under the same reasoning, given above, the following cells from the Intel l4nm Products have not been shown to meet this limitation: Dr. Foty’s demonstratives indicate the latter three cells comprise the entirety of cells for the Goldmont, Goldmont Plus, Ice Lake Chipset, and Cannon Lake Chipset products. CDX-0012C at *25-26. Thus, the Accused Products including these models do not infringe. The
155 remaining Intel 14nm Products use one or both of so they meet the limitation. And all of the Intel 10nm Products meet the limitation. e. At least six gate contact structures formed within the region of the semiconductor chip . . . wherein at least six gate electrode features within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six gate contact structures Fifth, the Staff, but not Respondents, disputes whether “at least six gate contact structures formed within the region of the semiconductor chip . . . wherein at least six gate electrode features within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six gate contact structures” is met in the Intel 10nm Products. SIB at 107. No party disputes the limitation is met in the Intel 14nm Products. For this limitation, and the Intel 10nm Products in particular, Tela argues the gate contact layout shapes are sized and positioned to overlap both edges of the surface of the gate structure to which it is in physical and electrical contact. CIB at 113-114 (citing, inter alia, CX- 1144C at Q/A 315-319, 1964, 1980-1995; CPX-0341C at -5827-5828; CPX-0030C at -1493; CX- 0662 at *7, 9). Tela does not address the limitation in its reply brief. See generally CRB at 65- 71. In opposition, the Staff argues that Intel’s in the Intel 10nm Products. SIB at 107 (citing RX-0014C at Q/A 160-161, 166); SRB at 41. Given this argument, it is unclear to me on what grounds the Staff is challenging the limitation. The Staff incorporates its argument from the 334 patent (see SIB at 107; SRB at 41), but in that discussion acknowledges direct physical contact between gate features and other M0 contact structures in the Intel 10nm Products, stating “[t]he evidence clearly shows that in TEM images of Intel’s 10nm Accused Product, the gate-contacting portion of M0 is the same width as
156 the gate, and thus not ‘sized to overlap both edges of the top surface of the gate structure.’” SIB at 41. To the extent Staff’s concern is that Tela attempts to show this limitation with layout files and other illustrations (see, e.g., SIB at 41) which is insufficient for a limitation concerning actual structures rather than imagery of actual structures (see, e.g., SIB at 41), layout files are circumstantial evidence of actual structure, and the Staff does not dispute that there is physical and electrical contact in the actual structures. In any event, direct teardown evidence confirms the required contact. See RDX-0010 at *34; RX-0008C at Q/A 162. Thus, the limitation is met. f. Diffusion region Sixth, Respondents and Staff dispute whether “diffusion region” is met in the Intel 14nm Products and Intel 10nm Products. RIB at 142, 144; SIB at 108. Tela argues that “[t]he diffusion regions are defined by the portions of the diffusion region layout shape to the sides of the gate (poly) layout shape” and “[t]he source and drain regions of the transistors in the Intel 14nm and 10nm Products are formed within the diffusion region specified in the layout.” CIB at 120 (citing CX-1144C at Q/A 127, 267-269, 953, 2081). To be clear, as with the 334 patent, Tela identifies “source and drain regions” in the Accused Products as the claimed “diffusion region[s]”: Indeed, the Intel documentation describes that (Tr. (Auth) at 652:6-12; RPX-1997 at 90237DOC0000307 90237DOC0000319 RPX-2021 at 90237DOC0001048, 90237DOC0001060 (same).) As such, these regions are “diffusion regions” under the ALJ’s construction because they are “selected portions of the substrate within which impurities have been introduced to form the source or drain of a transistor.” Id. at 120-121 (emphasis added).
157 In opposition, Respondents incorporate their discussion of the same limitation in claim 15 of the 334 patent. RIB at 142, 144; RRB at 79. The Staff incorporates similarly. SIB at 108; SRB at 42. As determined above in connection with the same limitation in claim 15 of the 334 patent, the Accused Products’ and therefore not literally “substrate” as required by the construction for “diffusion region.” While not explicit on this point, however, Tela’s reply brief contends the structures qualify as “diffusion region[s]” under the doctrine of equivalents, as in the 334 patent. See CRB at 69 (citing CRB at 19-28). As determined above, the evidence supports this assertion. Accordingly, the Accused Products meet this limitation. g. Diffusion contact structure Seventh, Respondents and Staff dispute whether “diffusion contact structure” is met in the Intel 14nm Products and Intel 10nm Products. RIB at 142, 144; SIB at 108-109. “Contact structure” was not previously construed, nor was “diffusion contact structure.” See Order No. 34 at 61. For this limitation, Tela argues “[i]n the Intel 14nm and 10nm Products, the diffusion regions are physically and electrically contacted by a diffusion contact structure which “physically contacts the source and drain regions to form an electrical connection to other features.” CIB at 121 (citing, inter alia, CX-1144C at Q/A 267, 297-300, 311- 314, 317, 320, 953, 2081; CPX-0097C at -146; CPX-0341C at -5815-5824; CPX-0497C at -771). Tela also points to Intel documentation on the 10nm process which describes Id. (citing JX-0239 at *3; Hr’g Tr. at 669:2- 670:22); CRB at 70. Tela rejects a requirement that this contact structure must be separate from any other, such as gate contacts, citing Order No. 34. See CRB at 70 n.16 (citing Order No. 34 at
158 60-61). Even then, Tela argues, there is at least one diffusion contact structure which is clearly separate from the gate contacts. See id. (citing CX-1144C at Q/A 989-1000, 2100-2108). In opposition, Respondents argue that the Accused Products lack these structures and that those identified by Tela “‘do not physically and electrically contact the substrate or any diffusion region therein, nor do they otherwise involve ‘diffusion’ of any kind.’” RIB at 142 (citing RX- 0014C at Q/A 130-133; RX-0008C at Q/A 84-98), 144 (citing RX-0014C at Q/A 130-133; RX- 0008C at Q/A 84-98). Respondents allege Tela and Dr. Foty fail to address the requirement “that these be ‘diffusion contact’ structures (as opposed to other types of contact structures) . . . .” Id. at 142; see id. at 144. The Staff agrees and adds, specifically, “Intel’s gate contacts and diffusion contact functionalities are See SIB at 108 (citing RX-0014C at Q/A 139-144; HTC Corp. v. Cellular Commc’ns Equip. LLC, 701 F. App’x 978, 982 (Fed. Cir. 2017)). This, the Staff argues, is in addition to the fact that these structures do not contact substrate or any diffusion region in the substrate. See id. at 108-109 (citing CX-1144C at Q/A 131; RX-0008C at Q/A 84-98). Respondents’ argument depends on the absence of a “diffusion region” already discussed above, as opposed to actually identifying and discussing what structures the accused do physically and electrically contact. See RX-0014C at Q/A 130-133. And in fact, Respondents’ witness, Dr. Auth, testified that the sources and drains discussed above. RX-0008C at Q/A 95. This meets the plain and ordinary meaning of “diffusion contact structure” as a structure which contacts what has been alleged as the “diffusion region” under the claim. Inasmuch as construction of this limitation is required, that plain and ordinary meaning is adopted.
159 As to the Staff’s contention that the limitation cannot be met because “Intel’s gate contact and diffusion contact functionalities are (SIB at 108), Tela correctly points out that the claim requires only “at least one diffusion contact structure” (523 patent at cl. 1) and, assuming a need for separateness, the Staff’s cited evidence does not show all accused diffusion contacts also serve as gate contacts (SIB at 108 (citing RX-0014C at Q/A 139-144; RDX-0016C at *64)). The fact that they may otherwise be in the same “layer” is immaterial and does not conflict with the language of the claims. Accordingly, the limitation is met in the Accused Products. E. Domestic Industry – Technical Prong According to Tela’s post-hearing briefing, the construction or use of the DI Products practice claims 27 and 28 of the 523 patent. See CIB at 135. For the reasons discussed below, Tela has not shown by a preponderance of the evidence that the DI Products practice the claims. 1. Product Representativeness As determined above, Tela has not shown the Exynos 7420 is representative of the other DI Products (S5E7570, S5E7870, S5E7880, S5E7883, and S5E8890) such that practice of the claims of the Asserted Patents by the Exynos 7420 suffices for the other products as well. Nevertheless, the following discussion of particular claim limitations assumes all products are represented by the Exynos 7420. 2. Disputed Claims Respondents contest Tela’s alleged practice of claim 27 but do not address claim 28. See RIB at 145-148; RRB at 79-81. The Staff takes the same position on claim 27, but contends claim 28 is also not practiced on identical grounds. SIB at 110-112. The evidence shows Tela has not shown direct practice of either claim.
160 a. Claim 27 For reference, claim 27 of the 523 patent requires: 27. [27a] A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, [27b] the gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process, [27c] the gate electrode feature layout shapes positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch, [27d] each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in a y- direction in a substantially centered manner along an associated gate gridline, [27e] wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon, [27f] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, [27g] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type; [27h] a number of gate contact structures formed within the region of the semiconductor chip, the gate contact structures formed in part utilizing corresponding gate contact structure layout shapes as an input to a lithography process, wherein each gate electrode feature that forms any transistor gate electrode within the region has a respective top surface in physical and electrical contact with a corresponding gate contact structure formed at least in part from a gate contact structure layout shape having a substantially rectangular shape, [27i] wherein each gate contact structure that contacts a given gate electrode feature that forms any transistor gate electrode does not contact another gate electrode feature, wherein any gate contact structure layout shape that has a corresponding length greater than or equal to a corresponding width is oriented to have its corresponding length extend in an x-direction; and
161 [27j] a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, [27k] the first-metal layer including first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, [27l] wherein each transistor within the region is formed in part by a corresponding diffusion region, each diffusion region formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process, wherein each diffusion region that forms part of any transistor within the region is formed at least in part by a corresponding diffusion region layout shape that has a substantially rectangular shape, [27m] wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least two first-metal structures form portions of one or more electrical connections within the multiplexer or the latch. 523 patent at cl. 27 (annotated). Several disputes exist between the parties concerning whether Tela has shown the DI Products meet the limitations of the claim. These are addressed below. In view of the testimony of Dr. Foty that the DI Products practice those remaining limitations which are not in dispute, the DI Products have been shown to practice them as alleged. See CX-1144C at Q/A 2709-2967; CIB at 135-140. i. Gate electrode feature layout shapes positioned in accordance with a gate horizontal grid First, as with the 334 patent, Respondents and Staff dispute whether “gate electrode feature layout shapes positioned in accordance with a gate horizontal grid” is met in the DI Products. RIB at 148; SIB at 111. For this limitation, Tela contends “Samsung’s 14LPP and 14LPC design manuals specify the which are used as an input to a lithography process to form gate electrode features.” CIB at 135-136 (citing CX-1144C at Q/A
162 2766-2770; CX-0727C at *38, 133; CX-0726C at *46, 162). Tela claims a teardown analysis also shows practice of the limitation (see id. at 136; CRB at 71 (“[M]asks are not necessary to show infringement.”)) and Respondents’ expert, Dr. Subramanian, “had no doubt that the Exynos 7420 chip would be manufactured from a layout designed in accordance with Samsung design rules” (CIB at 136 (citing Hr’g Tr. at 937:20-939:5)). In opposition, Respondents emphasize Tela’s failure to offer any “documents, testimony, or any other evidence describing Samsung’s layout stage at all, let alone establish that any such gridlines were used during layout.” RIB at 148 (citing RX-0014C at Q/A 437, 559-666). “Accordingly,” Respondents argue, “Tela has not met its burden of proving that the alleged DI products practice this limitation.” Id.; see RRB at 81 (“[N]o evidence of record . . . that the claimed ‘grid’ and ‘gridlines’ are used in the manner claimed.”). The Staff, on the other hand, argues “[t]he DI products do not satisfy this limitation for the same reasons described above for non- infringement by the Intel Accused Products.” SIB at 111; SRB at 43. As determined above in the context of the 334 patent, the evidence shows the DI Products contain actual gate electrode features positioned in accordance with a gate horizontal grid, based in no small part on actual teardown imagery of the Exynos 7420 showing linear, parallel arrangement to these structures. See, e.g., JX-0215 at *9. This limitation, however, requires not actual structures, but layout shapes, positioned in accordance with a gate horizontal grid. The record supports finding that such layout shapes exist and are so positioned. Dr. Subramanian conceded that the DI Products would be manufactured in accordance with the design rules concerning layout of gate structures. Hr’g Tr. at 937:20-939:5. Those rules are contained in CX- 0727C and CX-0726C, and Dr. Foty testified as to how these documents refer to
163 . CX-1144C at Q/A 107, 2657, 2769-2778; see CX-0727C at -38, -133. Thus, it is more likely than not the limitation is met, despite the absence of actual layout files in the record. To the extent the Staff argues the limitation is not met because no further specificity on the “grid” is provided in the design rules, or for the lack of an actual, observable projection of a “grid,” those reasons are not persuasive, as discussed in the context of infringement under the 334 patent. ii. Gate electrode feature layout shapes used as an input to a lithography process Second, the Staff, but not Respondents, disputes whether “gate electrode feature layout shapes used as an input to a lithography process” is met by the DI Products. SIB at 110-111. Tela contends “Samsung’s 14LPP and 14LPC design manuals specify the which are used as an input to a lithography process to form gate electrode features.” CIB at 135-136 (citing CX-1144C at Q/A 2766-2770; CX-0727C at *38, 133; CX-0726C at *46, 162). Tela claims a teardown analysis also shows practice of the limitation (see id. at 136; CRB at 71 (“[M]asks are not necessary to show infringement.”)), and Respondents’ expert, Dr. Subramanian, “had no doubt that the Exynos 7420 chip would be manufactured from a layout designed in accordance with Samsung design rules” (CIB at 136 (citing Hr’g Tr. at 937:20-939:5)). The Staff criticizes Tela for “offer[ing] no direct evidence regarding Samsung’s design layout or SAS’s mask shapes that are used during Samsung’s lithography process versus the structures in the final product.” SIB at 110. Thus, according to Staff, there is insufficient evidence to show practice of the claim. See id. at 110-111 (citing RX-0014C at Q/A 606-612); SRB at 42- 43. The limitation is more likely than not practiced by the DI Products, albeit through circumstantial evidence. As determined above, the evidence supports finding that “gate electrode
164 feature layout shapes” are used by Samsung in the creation of the DI Products, and are positioned in accordance with a grid. Thus, the issue becomes whether these “gate electrode layout shapes” are also used as an input to a lithography process. As explained in the infringement discussion above, “used as an input” encompasses Intel’s use of design layout shapes as a starting point to create backbone and cut mask shapes for lithography, where that lithography is just the first step in a process called spacer-defined double (or quad) patterning. See, e.g., RX-0008C at Q/A 31-32, 99-115. Dr. Subramanian considered teardown analyses and Samsung’s design rules to conclude that Samsung utilizes the same process. See RX-0014C at Q/A 598-606 (“It is my opinion that Samsung likely uses SADP to form its metal gates. In any event, Dr. Foty has not provided evidence to refute that it does.”). Dr. Foty, also considering Samsung’s design rules, points to as evidence that gate electrode feature layout shapes are created and then used in a lithography process. CX- 1144C at Q/A 2769-2770. Thus, on balance, a preponderance of the evidence supports finding the DI Products meet this limitation, essentially in the same way as the Accused Products. iii. Diffusion Regions Third, as with the 334 patent, Respondents and Staff dispute that the DI Products have any “diffusion region[s].” RIB at 145; SIB at 111-112. Tela again points to the in Samsung’s LPP and LPC design manuals, as evidence of this claim element. CIB at 139-140; CRB at 71-72. As determined above, the DI Products’ epitaxially grown sources and drains are new material and therefore not literally “substrate” as required by the construction for “diffusion region.” Again, though, Tela alleges the limitation is practiced under the doctrine of equivalents, which, again, the record supports. CRB at 71-72 (citing CRB at 19-28). Thus, the limitation is practiced.
165 iv. Formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process Fourth, Respondents and Staff contend that, should the DI Products be found to contain “diffusion region[s],” they are not “formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process.” RIB at 145-148; SIB at 111-112. For this limitation, Tela contends the in the DI Products, is “formed in part based on corresponding diffusion layout shapes in, at least, a GDSII file that is used as an input to a lithography process.” CIB at 140 (citing CX-1144C at Q/A 2931-2936; CX-0727C at *37, 138, 141; CX-0726C at *46, 168, 171); see CRB at 72. In opposition, Respondents again note the lack of discovery from non-party Samsung and state “the record does not contain any layout files for Samsung chips.” RIB at 145 (citing RX- 0014C at Q/A 616); RRB at 80 (“the ‘GDSII file’ Tela references is purely hypothetical; there is no Samsung GDSII file in the record.”). Thus, according to Respondents, “[t]here is no evidence of which layout shapes, if any, are utilized as an input to lithography,” and Tela cannot meet its burden. RIB at 146; see RRB at 80-81. Respondents also note that the acknowledged epitaxially grown source and drain regions are “fundamentally non-lithographic.’ RIB at 146 (citing RX- 0014C at Q/A 619); see generally RIB at 146-148. The Staff agrees with this position. SIB at 111-112; SRB at 43-44. The limitation is not practiced given the fact, which Respondents allege and Tela does not dispute, that sources and drains are fundamentally non-lithographic. Indeed, Tela has offered no explanation of how lithography plays a role, even “in part,” in source and drain creation. Thus, in contrast with gate electrode features, which do involve lithography, there can be no diffusion regions “formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process.”
166 v. Substantially rectangular shape Fifth, Respondents and Staff dispute that the DI Products contain “diffusion region layout shapes” that are “substantially rectangular.” RIB at 145; SIB at 111-112. Tela contends the of the DI Products have corresponding diffusion layout shapes within, “at least, a ” CIB at 140. Tela further contends these are rectangular, Id. (citing CX-1144C at Q/A 2931-2946; CX- 0727C at *37, 138, 141; CX-0726C at *46, 168, 171); CRB at 72. Tela has not sufficiently shown a rectangular shape for these layout shapes. Given the absence of actual layout files, the shape of “each diffusion region” for “each transistor” within the overall “region of the semiconductor chip” in satisfaction of the claim (see 523 patent at cl. 27) cannot be drawn from brief imagery on the cited pages of Samsung’s LPP and LPC design rules (CX-0727C at *37, 138, 141; CX-0726C at *46, 168, 171; see RIB at 146, 147 (citing RX-0014C at Q/A 618; CX-1144C at Q/A 2934)). Therefore, this limitation is not met by the DI Products. b. Claim 28 For reference, claim 28 of the 523 patent requires: 28. [28a] A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, [28b] the gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process, [28c] the gate electrode feature layout shapes positioned in accordance with a gate horizontal grid that includes a number of gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch, [28d] each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in a y- direction in a substantially centered manner along an associated gate gridline, [28e] wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon,
167 [28f] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, [28g] wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type; [28h] a number of gate contact structures formed within the region of the semiconductor chip, the gate contact structures formed in part utilizing corresponding gate contact structure layout shapes as an input to a lithography process, wherein each of at least six gate electrode features within the region has a respective top surface in physical and electrical contact with a corresponding gate contact structure formed at least in part from a gate contact structure layout shape having a substantially rectangular shape, [28i] wherein each gate contact structure is centered in an x-direction on the gate electrode feature with which it physical contacts, [28j] wherein each gate contact structure layout shape that has the substantially rectangular shape has a corresponding length greater than or equal to a corresponding width and is oriented to have its corresponding length extend in the x-direction, wherein each of the number of gate contact structures is in physical contact with only one of any of the gate electrode features; and [28k] a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, [28l] the first-metal layer including at least two first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, the at least two first-metal structures forming portions of one or more electrical connections within the region of the semiconductor chip, [28m] wherein each transistor within the region is formed in part by a corresponding diffusion region, each diffusion region formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process, wherein each diffusion region that forms part of any transistor within the region is formed at least in part by a corresponding diffusion region layout shape that has a substantially rectangular shape.
168 523 patent at cl. 28 (annotated). As noted above, Respondents do not explicitly challenge practice of claim 28, but the Staff does, for all of the same reasons discussed with respect to claim 27: both claims require “diffusion region,” “diffusion region layout shape . . . formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process,” “a substantially rectangular shape,” and “gate electrode feature layout shapes used as an input to a lithography process.” See SIB at 110-112. As determined above, the DI Products do not practice claim 27. Accordingly, the DI Products also have not been shown to practice claim 28. F. Validity Respondents and the Staff identify and discuss the following invalidity theories for the 523 patent: Claims Theory 1- 11, 14-20, 25, 26, 27, 28 Rendered obvious under 35 U.S.C. § 103 by Kitabayashi (JX- 0267) and Intel 45nm Products and/or Maziasz and Hayes (RX- 0028) 27 Lack of written description 35 U.S.C. § 112, ¶ 1 See generally RIB at 148-171. The Staff agrees that claim 27 fails the written description requirement, but does not assert obviousness as to any claim. See SIB at 112-114. Claim 27 is pertinent only to the technical prong of domestic industry. See RIB at 148; SIB at 83-84. Thus, because indefiniteness is not an asserted ground of invalidity of claim 27, the parties’ dispute over that claim need not be resolved or otherwise addressed. Silicon Microphone Packages, Inv. No. 337-TA-695, Notice at 3. Thus, only the obviousness theory remains. Before turning to the merits of that theory, the priority date of the 523 patent must be established. The 523 patent claims priority to the 2006 Provisional Application and lacks the new
169 matter added to the 731 Application in 2015. See 523 patent at 1:13-28. And Respondents do not allege that its asserted priority date is erroneous. See RIB at 149. Therefore, the 523 patent’s presumptive priority date is March 9, 2006. With this date in mind, Respondents assert three prior art references in an obviousness combination: (1) Kitabayashi; (2) the Intel 45nm Products; and (3) the textbook entitled “Layout Minimization of CMOS Cells” by Maziasz and Hayes. RX-0007C at Q/A 91. Tela does not expressly dispute that Kitabayashi and Maziasz and Hayes are prior art. See CIB at 144. Kitabayashi was filed as a U.S. Patent Application in 2004 and issued in 2007, and the earliest date Tela asserts as the 523 patent’s conception date is October 22, 2005, so Kitabayashi is prior art because it is a patent “granted on an application for patent by another filed in the United States before the invention by the applicant for patent.” 35 U.S.C. § 102(e) (2002); RX-0267; see CIB at 152. And Maziasz and Hayes was published in 1992, well before the 523 patent’s priority date. See RX-0028. Whether the Intel 45nm Products are prior art under the pre-AIA version of Section 102(g) is a closer question, however, requiring more scrutiny than with the 334 patent. Tela contends that the inventions claimed in the 523 patent were conceived no earlier than October 22, 2005, and constructively reduced to practice by the filing of the 2006 Provisional Application on March 9, 2006. See CIB at 152-153. Respondents point to corroborated evidence that the Intel 45nm Products were conceived no later than June 27, 2005, and contend they were actually reduced to practice no later than January 25, 2006. See RIB at 78, 80; RX-0007C at Q/A 234. Therefore, the question presented is whether the Intel 45nm Products were actually reduced to practice before March 9, 2006, and not abandoned, suppressed, or concealed; if so, diligence is immaterial. See Fox Group, 700 F.3d at 1304.
170 As noted, the Intel 45nm Products consist of the test chip and the Penryn chip. See RIB at 77. A press release and a Powerpoint presentation state that Intel successfully demonstrated its test chip no later than June 27, 2005, and that it was “on track to manufacture chips with this technology in 2007.” JX-0278; see JX-0275. Tela criticizes this evidence as uncorroborated. See CIB at 83 (citing In re Garner, 508 F.3d 1376, 1381 (Fed. Cir. 2007)). Garner, however, applies a “rule of reason” analysis, where “evidence of surrounding facts and circumstances independent of information received from the inventor” may be sufficient to corroborate reduction to practice. 508 F.3d at 1380 (quoting Price v. Symsek, 988 F.3d 1187, 1195 (Fed. Cir. 1993)). Dr. Subramanian itemizes the pertinent design documents, which were written between May 2004 and October 2005. See RX-0007C at Q/A 242-253. The timeline of these documents is consistent with what would be expected in the leadup to Intel’s public announcement of a “[f]ully functional” test chip in January 2006, and the announcement itself was supported by photographs of a chip and images of what even Tela describes as a portion of its gate layer. JX-0275 at 3; see JX-0278; CIB at 83. To be sure, Respondents offer no test results to explicitly demonstrate that the test chip “would work for its intended purpose,” but the Penryn chip’s commercial release in 2007 (as predicted by Intel in its 2006 press release), combined with the other evidence offered, is adequate to satisfy that standard under a “rule of reason.” Garner, 508 F.3d at 1380; see RX-0001C at Q/A 34 (“Intel completed testing” by January 2006 “to ensure that it worked for its intended purpose”), 58. And as with the 334 patent, the test chip was not conceived, reduced to practice, or otherwise developed by the 523 patent’s inventors, so necessarily it was reduced to practice “by another.” See CIB at 83 (citing Fox Group, 700 F.3d at 1304). So the test chip was reduced to practice prior to March 9, 2006. Tela advances two arguments as to why this does not establish the Intel 45nm Products as prior art. First, Tela argues
171 that the test chip was intentionally abandoned, suppressed, or concealed. See CIB at 85; CRB at 52. Inasmuch as the test chip materially differs from the Penryn chip, the evidence supports this argument, because, among other factors, the test chip itself was never commercialized and only some of its “hundreds of [design] rules” have been publicly disclosed. See CX-1219C at 261-263. But Respondents contend that the test chip and the Penryn chip, which was commercialized, were part of the same research and development program—the test chip was, in essence, a “prototype” that was “refined, perfected, and improved . . . for commercial release” as the Penryn chip. RIB at 84; see RX-0007C at Q/A 220. Other than a conclusory, nonspecific comment by Dr. Hook, Tela points to no evidence to counter this contention. See CX-1231C at Q/A 1481 (“the M1 structures differ between the 45nm SRAM test chip and the Penryn”). Respondents’ evidence supports it, however. See RX-0001C at Q/A 37 (“The test chip was designed using the same design rules that we developed for the commercial products.”); RX-0007C at Q/A 288 (Dr. Subramanian explains that his claim-by- claim analysis relies on layout files from both the test chip and the Penryn chip). Dr. Auth testified that it took approximately 1,000 Intel engineers about two years of full-time work “for the main part of the project” of developing the Intel 45nm Products, so the delay here between actual reduction to practice and commercialization would be expected. RX-0001C at Q/A 30; see id. at Q/A 40 (“Penryn processors . . . are manufactured on Intel’s 45nm process technology”). Even Dr. Hook, who opined that the Intel 45nm Products had not been adequately publicly disclosed, generally treated the test chip and the Penryn chip as one product for purposes of his opinion. Compare CX-1231C at Q/A 1217 (“there a lot of design rules” that were not discussed in a 2007 publication by an Intel engineer) with Q/A 1204 (Respondents “rel[y] on certain 45nm products using Intel’s Penryn architecture,” and Dr. Hook “refer[s] to these as ‘Intel 45nm products’”).
172 Therefore, the evidence shows that the Penryn chip was the commercial embodiment of the test chip, rather than an entirely different invention, and that the 21-month period between actual reduction to practice and public disclosure through commercialization resulted from continuing research and development efforts, rather than intentional suppression and concealment. In response, Tela presents its second argument for abandonment, suppression, or concealment: that there was no enabling public disclosure. See CIB at 83-88. This argument differs from the one advanced regarding the 334 patent, because the 334 patent covers product claims and the 523 patent allegedly covers product-by-process claims. See CIB at 144 n.12. And because prior art status for product-by-process claims requires an enabling public disclosure, the argument goes, mere commercialization, without an otherwise enabling disclosure, is insufficient to establish prior art status. See id. at 144-45. As a threshold matter of claim construction, all asserted claims depend from claim 1, which claims a “semiconductor chip” comprising various structures “formed” under certain conditions. E.g., 523 patent at 24:51 (“gate electrode features formed within a region”). Respondents and the Staff seemingly agree that such language articulates a product-by-process claim, and so do I. See RIB at 85; SIB at 104. In view of this construction, Tela asserts that “Federal Circuit case law holds that the public disclosure necessary for prior art status to product-by-process claims under § 102(g) must be enabling.” CIB at 144. Tela candidly admits, however, that the “case law” to which it refers is a dissenting opinion in Fox Group. See id. at 144 n.12. In fact, actual Federal Circuit case law supports Respondents’ position: “a product-by-process claim can be anticipated by a prior art product that does not adhere to the claim’s process limitation,” because “an old product is not patentable even if it is made by a new process.” Amgen Inc. v. F. Hoffman-La Roche Ltd, 580 F.3d 1340, 1370 (Fed. Cir. 2009). And as noted above with respect to the product
173 claims of the 334 patent, commercialization of an allegedly prior art product is a “way to prove public disclosure” under Section 102(g), even when that commercialization by itself is non- enabling. Fox Group, 700 F.3d at 1306-07. Therefore, the Intel 45nm Products, and the Penryn chip in particular, are prior art to the 523 patent. As to the specifics of Respondents’ obviousness theory, Respondents argue the obviousness of the 523 patent in view of two combinations of prior art: Kitabayashi/Intel 45 nm Products and Kitabayashi/Intel 45 nm Products/Maziasz and Hayes. See RIB at 149. As with the 334 patent, the combination of Kitabayashi and the Intel 45 nm Products comes close to an embodiment of claim 1 of the 523 patent. Claim 1 covers a semiconductor chip possessing, among other elements, rectangular “gate electrode features” oriented in the y-direction and having a particular pitch, rectangular “gate contact structures” oriented in the x-direction, “at least one diffusion contact structure” positioned on a diffusion contact grid having a spacing equal to the gate pitch, and rectangular “first-metal structures” oriented in the x-direction, all forming multiple transistors. See generally 523 patent at 24:50-26:4. Most of these elements and the other elements of claim 1 are found in the Intel 45 nm Products, as Dr. Subramanian opines. E.g., RX-0007C at Q/A 612-13. One of his demonstrative exhibits, for instance, identifies gate electrode features (green), gate contact structures (dark blue), and diffusion contact structures (pink) in the test chip. See RDX-0009C at *169. In particular, and contrary to Tela’s contention, Dr. Subramanian identifies multiple regions, generally by reference to cells shown in Intel 45 nm Product layout files, that contain structures that form various logic circuits, including a multiplexer, an inverting multiplexer, and a latch. See RX-0007C at Q/A 629-632; RIB at 149 n.42 (“the ‘region’ is the entire cell”); cf. CIB at 147 (arguing that Respondents “present[] no evidence” of a region of the
174 semiconductor chip containing features that form a logic circuit). And Kitabayashi discloses rectangular first-metal structures all oriented in the same direction, with “grids” of multiple metal layers, each oriented orthogonally to its vertical neighbors. See JX-0267 at 5:46-58, Fig. 9. Thus, all the elements of claim 1 are seemingly disclosed in the prior art, with two exceptions. The first is, as Tela notes, orienting the gate electrode features and first-metal structures perpendicularly as in the 334 patent. 9 See CIB at 146. Respondents allege that this element would be obvious to a skilled artisan on the same grounds presented before. See RIB at 149 (citing RX-0007C at Q/A 537-552 (discussing Intel 45nm Products), 152-153 (citing RX- 0007C at Q/A 606-610 (discussing Kitabayashi)). Dr. Subramanian similarly does not expand on the purported motivation to include this arrangement in the prior art combination. RX-0007C at Q/A 610 (“As I discussed earlier, in the combination of Kitabayashi and Intel’s 45nm Products, it would have been obvious to run the wires in M1 to be perpendicular to the direction that poly runs.”). Accordingly, for the same substantive reasons discussed above, Respondents have not clearly and convincingly shown this limitation would be present in the Kitabayashi and Intel 45nm Product combination. The second exception is the “diffusion region.” Respondents contend that this element is found in the Intel 45nm Products, to the extent “any source or drain is a ‘diffusion region’” under Tela’s infringement theory. RIB at 154 (citing RX-0007C at Q/A 639-642)). But the sources and drains in the Intel 45nm Products are and do not literally satisfy the “diffusion 9 Not all relevant claim terms were construed during the Markman proceeding, including, as one example, “grid,” to the extent it means something beyond “projected gridlines” used during a stage of chip manufacturing, and “diffusion contact structure.” Order No. 34 at 59. But Tela does not separately dispute that the various components in the prior art fall within the scope of the unconstrued claim terms, so there is no need to separately construe them. See Vanderlande Indus. Nederland BV v. Int’l Trade Comm’n, 366 F.3d 1311, 1323 (Fed. Cir. 2004).
175 region” limitation, as explained above. See RX-0007C at Q/A 641. This is the only argument Respondents present regarding this limitation. See RIB at 154; RRB at 83-85. Although diffusion regions like those disclosed in the 523 patent are likely readily found in the prior art, Respondents make no effort to demonstrate that it would have been obvious to a skilled artisan to, say, substitute such diffusion regions for the sources and drains found in the Intel 45 nm Products, or otherwise demonstrate obviousness beyond generally alluding to “Tela’s infringement theory.” RIB at 154. Respondents’ evidence regarding this limitation is not clear and convincing, and accordingly, this limitation is also missing from the prior art relied upon. Beyond these missing claim elements, Respondents have not presented a clear and convincing case of obviousness in a procedural sense, either. Tela is correct that much of Respondents’ detailed discussion for this patent appears in footnotes. See CRB at 73 n.17. Indeed, some of Respondents’ most significant points appear in footnotes. E.g., RIB at 152 n.44 (disputing Dr. Hook’s opinion regarding motivation to combine); RIB at 153 n.48 (arguing that a skilled artisan would have known that “metal 1 can be run orthogonal to poly”). Although Ground Rule 13.1 contemplates the use of footnotes (because it holds that footnotes need not be double spaced), it also states that a “reasonable page limit will be imposed,” with that limit determined on a “case- by-case basis.” Order No. 2, Attachment A. The limit here was 200 pages for the opening brief, as announced in open court at the end of the evidentiary hearing. See Hr’g Tr. at 1286:18-19. The large amount of text, the pointedness of the arguments, and the volume of the evidence cited in the relevant footnotes of Respondents’ opening brief may not violate the letter of Ground 13.1, but they plainly violate the spirit, to Tela’s prejudice. See id. at 1288:12-18 (“I urge both sides, be judicious about what you put in your post-hearing briefs”). So although the pertinent footnotes
176 have not been “disregarded,” as Tela requests, they have generally been accorded less weight than the main text. CRB at 73 n.17. Accordingly, Respondents have not carried their burden of proving that claim 1 is invalid as obvious, nor have they proven that the claims depending from it are invalid as obvious. Ortho- McNeil, 520 F.3d at 1365. VI. DOMESTIC INDUSTRY - ECONOMIC PRONG In a patent-based complaint, a violation of Section 337 can be found “only if an industry in the United States, relating to the articles protected by the patent ... concerned, exists or is in the process of being established.” 19 U.S.C. § 1337(a)(2). Under Commission precedent, this “domestic industry requirement” of Section 337 consists of an economic prong and a technical prong. Stringed Instruments, Inv. No. 337-TA-586, Comm’n Op. at 12-14. The complainant bears the burden of establishing that the domestic industry requirement is satisfied. See Certain Set-Top Boxes and Components Thereof, Inv. No. 337-TA-454, Initial Determination at 294 (June 21, 2002) (not reviewed in relevant part). The economic prong of the domestic industry requirement is defined in subsection (a)(3) of Section 337 as follows: (3) For purposes of paragraph (2), an industry in the United States shall be considered to exist if there is in the United States, with respect to the articles protected by the patent, copyright, trademark or mask work concerned -- (A) Significant investment in plant and equipment; (B) Significant employment of labor or capital; or (C) Substantial investment in its exploitation, including engineering, research and development, or licensing. 19 U.S.C. § 1337(a)(3). The economic prong of the domestic industry requirement is satisfied by meeting the criteria of any one of the three factors listed above. Importantly, the Commission has
177 clarified that investments in plant and equipment, labor, and capital that may fairly be considered investments in research and development are eligible for consideration under subsections (A) and (B), in addition to subsection (C). See Solid State Storage Drives, Comm’n Op. at 14. Tela contends the economic prong is met under subsections (A) and (B) through the domestic activities of its licensee SAS. In its opening brief, Tela explains it owns the Asserted Patents and entered into a license with Samsung Electronics Co., Ltd. (“Samsung”) in 2016 which permitted Samsung and its affiliates, such as SAS, to practice the Asserted Patents. CIB at 155- 156 (citing JX-0008; JX-0010; CX-1148C at Q/A 6-21; JX-0170C). No party disputes this ownership or the status of SAS as a licensee. See generally RIB; RRB; SIB; SRB. As determined above, Tela has not shown the technical prong of domestic industry is met. Nevertheless, to aid the Commission’s analysis, Tela’s claims of economic prong domestic industry are evaluated below; and for the reasons provided, Tela has not shown “significant” investment in satisfaction of the statute under either subsection (A) or (B). 19 U.S.C. § 1337 (a)(3)(A), (B). A. Qualifying Expenditures As noted above in the discussion of procedural history, and prior to the evidentiary hearing, Tela filed a motion for summary determination that it satisfied the economic prong of domestic industry. That motion was granted-in-part with Order No. 38, which, while not finding the matter conclusively established, did establish the qualifying expenditures from Tela’s licensee, SAS, which manufactures the DI Products within the United States. Those expenditures, repeated in Tela’s post-hearing briefing with small changes to Group 3 amounts (see CIB at 161 n.17), are as follows:
178 (id. at 160-161; see Order No. 38 at 13). For ease of reference, and as mentioned above, the groups 1-3 refer to the following overlapping sets of products: Tela’s Economic Prong Groups Group 1 (7420) Group 2 Group 1 + Group 3 Group 1 + Group 2 + CIB at 160; see RIB at 172-173. Accordingly, Tela contends “[i]n light of these findings, the only remaining issue for the ALJ to decide is whether these allocated investments are significant.” Id. at 154. The Staff’s discussion of economic prong reflects the same position. See SIB at 116-122. Respondents and the Staff, on the other hand, do not immediately abandon a contest over Tela’s claimed investment amounts. Rather they argue that SAS effectively last produced Group 1 wafers in July 2018 (see RIB at 173-174; SIB at 117) and Group 2 wafers in December 2018
179 (see RIB at 174; SIB at 118), meaning that there was no investment in those products at the time of Tela’s original complaint (December 2018) or amended complaint (February 2019) (see RIB at 174-175; SIB at 118). Respondents reason that if this initial determination finds that Group 2 or Group 3 have not been shown to practice the Asserted Patents (as the contrary had been assumed in Order No. 38), that must mean there are no current “qualifying activities” to enable consideration of any “past” Group 1 investment, regardless of whether Group 1 satisfies the technical prong: As Order No. 38 recognized, past expenditures could be considered, “so long as those investments pertain to the complainant’s industry with respect to articles protected by the asserted IP rights and the complainant is continuing to make qualifying investments at the time the complaint is filed.” Order No. 38 at 6-7 (quotes and citation omitted) (emphasis added). While the ALJ noted that “qualifying investments continue to be made for the Group 3 products” (id. at 7), products can form the basis of a “qualifying” activity only if they practice the asserted patents. See Certain Television Sets, Television Receivers, Television Tuners, and Components Thereof, Inv. No. 337-TA-910, 2015 WL 6755093, Comm’n Op., at *39; Certain Subsea Telecommunications Sys. and Components Thereof, Inv. No. 337-TA-1098, Initial Determination at 70 (U.S.I.T.C. Apr. 26, 2019) (qualifying activity must be tied to patent-practicing article). With respect to Group 3, because Tela has not provided any evidence that the unique (non-Exynos 7420) products in Group 3 practice the Asserted Patents, any continuing activities for those products are irrelevant, and SAS’s cessation of activities for the Group 1 and 2 products should end the domestic industry inquiry. Id. at 175; see RRB at 89. As determined above, Tela has indeed failed to show practice of the Asserted Patents by the Exynos 7420 on the merits, and by the other DI Products through assertions of representativeness. In this way, domestic industry cannot be found. Assuming nonetheless that the Exynos 7420 does practice a claim of an Asserted Patent, Respondents’ argument regarding continuing qualifying activities should be addressed.
180 Respondents’ argument is not persuasive. As shown in their demonstrative below, the Group 1 products had been produced within one year of either Tela’s original or amended complaints: RIB at 174; RDX-0025C at *1; see CIB at 164 (noting “171 wafers represent thousands of Exynos 7420 processors”). Also as shown, an amount of Exynos 7420 products were produced after the filing of the complaint, between April and August 2019. See CRB at 81 (citing CX- 1597C). Considering the technology involved and required preparation for manufacture, the Exynos 7420 cannot be deemed a “discontinued” product. Respondents would have me ignore this 2019 production entirely and reach the opposite conclusion under Certain Thermoplastic- Encapsulated Electric Motors, Components Thereof, and Products and Vehicles Containing Same II, Inv. No. 337-TA-1073 (see RIB at 176), but that investigation concerned whether post- complaint expenditures could be considered in assessing “significant” investment. Comm’n Op. at 6-8 (Aug. 12, 2019). Here, the post-complaint activity is only considered to show the product
181 is not discontinued, and it is not incorporated into the investment amounts determined in Order No. 38 and evaluated below. See, e.g., Certain Magnetic Data Storage Tapes and Cartridges Containing the Same, Inv. No. 337-TA-1012, Comm’n Op. at 112-113 (Apr. 2, 2018) (“Magnetic Data Storage”). Moreover, because the Exynos 7420 was not discontinued at the time of Tela’s complaint, it is not reasonable to compare SAS to the complainant in Certain Television Sets, that had shifted its business model and ceased all of its qualifying domestic activity six months before filing its complaint. Inv. No. 337-TA-910, Comm’n Op. at 59 (Oct. 30, 2015). As the Commission in that investigation explained, “[w]hat is at issue in this investigation is not merely a decline in an ailing business or discontinued products, but the lack of evidence that a cognizable domestic industry exists at the time the complaint was filed. . . . Its U.S. business shifted toward patent monetization and away from any research and development, or engineering related to its tuner products.” Id. at 74. By contrast, the record here shows that SAS’s plant, equipment, labor and capital which created the Exynos 7420 products continued to function through the date of the complaint. To the extent Respondents and Staff argue for a rule that eliminates consideration of any investment older than six months when there is no investment during the same month, week, or day as the filing of the complaint (see RRB at 89 (“Because SAS did not produce any Group 1 wafers at the time of Tela’s complaint, no domestic industry in those products existed, and the inquiry should end there. See [Certain Television Sets].”); SIB at 118), such a rule is not supported by the cited precedent (see RIB at 175; RRB at 89; SIB at 118). Accordingly, the investment amounts listed for the Group 1 products in Order No. 38, and fairly adjusted by Tela without meaningful dispute (see RRB at 88; SRB at 46), are analyzed for significance.
182 B. “Significant” or “Substantial” The next step in the evaluation of domestic industry is to determine if the investment amounts identified above are “significant,” as in subsections (A) and (B). The most recent precedential decision by the Court of Appeals for the Federal Circuit addressing this determination is Lelo, which restated law applicable to a number of issues surrounding the economic prong of domestic industry. See 786 F.3d at 883-85. In particular, the Federal Circuit held that the statutory terms “‘significant’ and ‘substantial’ refer to an increase in quantity, or to a benchmark in numbers” and “[a]n ‘investment in plant and equipment’ therefore is characterized quantitatively, i.e., by the amount of money invested in the plant and equipment.” Id. at 883. Continuing, the Federal Circuit held “[a]ll of the foregoing requires a quantitative analysis in order to determine whether there is a ‘significant’ increase or attribution by virtue of the claimant’s asserted commercial activity in the United States.” Id. In short, “[q]ualitative factors cannot compensate for quantitative data that indicate insignificant investment and employment.” Id. at 885. The Commission has since made clear that some sort of comparative analysis must be made before significant or substantial can be found. See, e.g., Certain Gas Spring Nailer Products and Components Thereof, Inv. No. 337-TA-1082, Notice of Comm’n Determination at 3 (Dec. 12, 2019) (“Gas Spring Nailers”); Certain Carburetors and Products Containing Such Carburetors, Inv. No. 337-TA-1123, Comm’n Op. at 17-19 (Oct. 28, 2019) (“Carburetors”). As to the Group 1, (Exynos 7420) product, Tela points to a number of considerations: the asserted domestic activity is the actual manufacture of the “billions of transistors and other components that enable the logic functions,” which is qualitatively significant (see CIB at 166); that manufacture, regardless of the number of wafers made, requires enormous up-front investment in space and equipment (see id. at 167; id. at 167 n.20 (citing Magnetic Data
183 Storage, Inv. No. 337-TA-1012, Comm’n Op. at 115)); that manufacture, considered “front-end” processing, is generally quantitatively significant compared to the overseas, “back-end” processing (see id. at 167-170); the claimed labor and depreciation investment is quantitatively significant compared to the cost of the raw materials used by SAS in manufacturing, in a value-added context (see id. at 170-171); the value of the sold wafer as compared to raw material cost is quantitatively significant (see id. at 171-172); the scope of the Asserted Patents’ claims—that is, the physical implementation of integrated circuit designs—is commensurate with the scope of the work performed by SAS (see id. at 172-173); SAS is a quantitatively significant investor in U.S. semiconductor fabrication as compared to the rest of the industry (see id. at 173-174); and the claimed investment is quantitatively significant as compared to SAS’s revenue per sold wafer (see id. at 175-176). In its reply brief, Tela contends “[a]t base, Respondents and Staff’s only argument is that SAS’s allocated investments in Groups 1 and 2 are too small.” CRB at 82. This is in error, Tela argues, because the Commission has made clear there is no minimum monetary expenditure to satisfy the domestic industry requirement. See id. at 82-83 (citing Stringed Instruments, Inv. No. 337-TA-586, Comm’n Op. at 25-26; Carburetors, Inv. No. 337-TA-1123, Comm’n Op. at 27). Tela further observes that the parties’ positions on the Group 3 products reveals their application of a minimum investment: That Respondents and Staff contest the significance of the investments in Groups 1 and 2 – but not Group 3 – demonstrates that they are applying a minimum threshold. The fabrication activities and related expenses are relatively the same for all of the Exynos Products, as indicated by the fact that SAS tracks its costs per wafer at the node level (e.g., 14nm) and not by individual products. (CX-1145C (Greene) at Q/A 171-175 (showing that on average it costs SAS to fabricate any 14nm wafer).) Thus, the fabrication activities and the per-wafer costs between the three groups, all of which are 14nm Exynos mobile processors, are relatively the same. Group 3, however, contains more models and therefore the absolute value
184 of the allocated Group 3 investments is larger than those of Groups 1 and 2 because the same activities are applied across a greater volume of wafers. A finding that only Group 3 is significant necessarily means that a minimum threshold was applied, because significance only existed once the same activities and costs were multiplied by a sufficient volume of wafers for the aggregate allocated amount to cross some unspecified – and improper – significance threshold. Id. at 83-84. Tela reemphasizes its views that “domestic industry analysis is not whether the investments are large or small in the absolute sense, but whether they are important to the articles, which is the analysis Mr. Greene performed and Respondents and Staff ignore” (id. at 84 (citing Hr’g Tr. at 537:11-16, 543:11-16)), and the massive production of products by SAS other than the Exynos 7420 in 2018 is simply “not pertinent to the analysis” (id. at 85). Tela explains: More importantly, the production volume percentages were just used to quantitatively allocate SAS’s investments. (Tr. (Greene) at 511:24-512:4; 536:21-537:6.) Whether those investments are significant is a separate, multi-faceted inquiry. If an allocation percentage was the measure of significance, there would be no need perform any of the additional evaluations the Commission regularly employs to put the relative value of investments in context. See Certain Collapsible Sockets for Mobile Electronic Devices and Components Thereof, Inv. No. 337-TA-1056, Comm’n Op. at 20 n.13 (July 9, 2018) (significance cannot be determined on the sales-based allocation percentage itself); Carburetors, Comm’n Op. at 17-18; (Tr. (Greene) at 537:7-10). Respondents argue that Mr. Greene’s statement that production of a single wafer could be significant is absurd. (RIB at 173, 179.) Respondents cite no authority. Considering the Commission evaluates significance of the investment and activities to the articles, placed in the proper context – for example, that production of even a single wafer requires millions of dollars of equipment and facility space, and requires skilled technicians, and results in hundreds of valuable processors – production of a single wafer very well could be significant. (Tr. (Greene) at 543:24-545:8.) Regardless, Tela is not relying on a single wafer so the testimony is irrelevant. Id. Respondents oppose a finding of significance. Respondents highlight that the Group 1 product, the Exynos 7420, indisputably made up just 0.02% of all wafers fabricated by SAS in 2018 and argue this cannot be “significant.” RIB at 176 (citing CDX-0014C at *18). Respondents
185 criticize Tela for failing to take into account this minimal volume of wafers produced, and characterize the claim of Tela’s expert, Mr. Greene, that “production of just one wafer would qualify as ‘significant,’” as “self-evidently absurd.” See id. at 179 (citing Hr’g Tr. at 511:7-12, 535:8-16, 536:10-14). Respondents take the position that it is improper to ignore SAS’s production of other, non-DI Products, because “a domestic industry must be ‘made in the context of the complainant’s size.’” Id. at 181 (citing Certain Kinesiotherapy Devices and Components Thereof, Inv. No. 337-TA-823, Comm’n Op. at 33 (July 12, 2013), rev’d on other grounds, Lelo, 786 F.3d 879); RRB at 89-92 (citing, inter alia, Carburetors, Inv. No. 337-TA-1123, Comm’n Op at 17). As to Tela’s quantitative analysis, Respondents argue there is no evidence on “the processors’ R&D, design, assembly, testing, and packaging—none of which is carried out domestically by SAS, yet all of which contributes to the total cost of producing the processors (with the relevant data presumably being available to Tela from its licensee)” (RRB at 92 (citing Hr’g Tr. at 509:11-510:2, 522:16-525:25)), Tela’s use of Intel data as a proxy suffers from the same problem, and there is no evidence to believe the analogy to Intel is appropriate (see id. at 92- 93 (citing Hr’g Tr. at 533:9-534:24)). The Staff agrees with each of Respondents’ points for the Group 1 product. See SIB at 117-120. In particular, the Staff notes the labor associated with Group 1 is one half of one employee (see SIB at 119 (citing RX-0011C at Q/A 140; Order No. 38 at 8)) and actual profits to SAS from the sale of wafers to Samsung are only (SRB at 47 (citing CPB at 170- 173)). The Staff summarizes: “[a]ll of these numbers are quantitatively small, particularly for large companies like SAS and Samsung . . . .” SRB at 47. The domestic industry investments are not significant. Even accepting Tela’s principal quantitative metric (i.e., SAS’s investments add 100% of the value to the product),
186 amounts are not significant. See CRB at 82-84. While it is true the Commission made clear in Stringed Instruments that “there is no minimum monetary expenditure that a complainant must demonstrate to qualify as a domestic industry” (Inv. No. 337-TA-586, Comm’n Op. at 25), it also explained “[w]e agree with the parties that the requirement for showing the existence of a domestic industry will depend on the industry in question, and the complainant’s relative size” (id. at 25-26). In that investigation, for example, a “substantial” or “significant” investment did not exist with investment of $8500 representing, impliedly, a 100% domestic value-add. See id. at 26- 27. Tela does little to explain why invested in plant and equipment and in labor is not too small. Indeed, in a section entitled “The Semiconductor Fabrication Industry and Marketplace,” Tela touts the domestic presence and spending of SAS as a whole, and not the figures at issue. See CIB at 173-174; see also CRB at 88-89. Tela also emphasizes the limited number of industry actors (CIB at 173 (“[O]nly a handful of companies are able to operate 300mm wafer fabrication facilities in the U.S.”)), the millions of dollars required in equipment and facilities required to start up semiconductor process fabrication (id. at 167 “These machines can cost up to $100 million apiece.”), and SAS’s relative size (id. at 173 (“After Intel, SAS is the largest major 14nm supplier in the U.S.”); id. at 174 (“[W]hile SAS is comparable to GlobalFoundries in terms of facility size and employee headcount, SAS invested in U.S. salaries and produced 14nm wafers in 2018.”). This approach avoids the crucial question, which is whether in plant and equipment and in labor can be considered “significant” in the contexts of the marketplace and SAS itself. In fact, Tela’s approach only serves to emphasize the modesty of these amounts. And that modesty is consistent with the fact that the Exynos 7420 is the processor for the Galaxy
187 S6, Samsung’s flagship smartphone back in 2015—a phone which has since been replaced by newer generations both in the marketplace and in SAS’s production facilities—so domestic industry investment can be expected to be even more modest in the future. See CIB at 159-160 (showing investment levels across LPE, LPP, and LPC), 164 (describing Galaxy S6); CX-0629; CX-1230; CX-0632; CX-0631; CX-0630; CX-0633. The Federal Circuit and the Commission have associated modesty with insignificancy, an appropriate association here as well. Lelo, 786 F.3d at 885 (“The Commission determined that Standard Innovation's investment and employment under prongs (A) and (B) were quantitatively ‘modest,’ Comm'n Op. at 34, which we take to mean ‘insignificant.’ . . . We agree with the Commission's finding that investment and employment under prongs (A) and (B) were modest and insignificant.”); Certain Thermoplastic-Encapsulated Electric Motors, Components Thereof, and Products and Vehicles Containing Same II, Inv. No. 337-TA-1073, Comm’n Op. at 14 (Aug. 12, 2019) (“IV’s investments are too modest to meet the domestic industry requirement of section 337(a)(3)”) (“Electric Motors”); Electric Motors, Inv. No. 337-TA-1073, Comm’n Op. at 17 (“IV has failed to show how these expenditures are significant in any appropriate context, particularly in light of the alleged difficulty of making these pumps.”). That there was a large up-front investment years ago changes nothing, because the domestic industry presently devoted to the Exynos 7420 is virtually defunct, and even massive investments cannot be allocated to domestic industry if they possess no nexus to a domestic industry product. See, e.g. Certain Subsea Telecommunication Systems and Components Thereof, Inv. No. 337-TA-1098, Comm’n Op. at 41 (Oct. 21, 2019) (“The Commission has found that complainants have not satisfied the domestic industry requirement where the complainant failed to allocate expenses to account for non-domestic industry products that do not practice the patent.”).
188 In sum, SAS’s commitment to producing semiconductors in the United States even though “global capacity for fabrication has generally shifted to Asia” (CIB at 174) is commendable. The record does not show, however, that the Exynos 7420 is a significant part of SAS’s plan; nor does it show SAS’s investment of in plant and equipment and in labor can be considered “significant” under the statute. Accordingly, Tela has not met the economic prong of the domestic industry requirement even assuming the Exynos 7420 is found to practice a claim of the Asserted Patents. VII. CONCLUSIONS OF LAW 1. The Commission has in rem jurisdiction over the accused products, integrated circuits and products containing same. 2. The importation or sale requirement of Section 337 is satisfied for all respondents. 3. Tela, through its licensee, has not been shown to practice any claims of U.S. Patent No. 10,141,334. 4. The domestic industry requirement is not satisfied with respect to the 334 patent. 5. Tela, through its licensee, has not been shown to practice any claims of U.S. Patent No. 10,186,523. 6. The domestic industry requirement is not satisfied with respect to the 523 patent. 7. Respondents directly infringe claims 1, 2, and 5 of the 334 patent. 8. Respondents directly infringe claims 1-11, 14-20, 25, and 26 of the 523 patent. 9. Claims 1, 2, and 5 of the 334 patent have been shown to be invalid under 35 U.S.C. § 102. No claims of the 334 patent have been shown to be invalid under 35 U.S.C. § 103. 10. Claims 1, 2, 5, and 15 of the 334 patent have been shown to be invalid under 35 U.S.C. § 112. 11. No claims of the 523 patent have been shown to be invalid under 35 U.S.C. § 103. 12. No claims of the 523 patent have been shown to be invalid under 35 U.S.C. § 112. 13. Tela is not contractually barred from enforcing the 334 patent against respondent Intel or its customers.
189 14. There is no violation of Section 337 with respect to the 334 patent. 15. There is no violation of Section 337 with respect to the 523 patent.
190 VIII. RECOMMENDED DETERMINATION ON REMEDY AND BOND The Commission’s Rules provide that subsequent to an initial determination on the question of violation of section 337 of the Tariff Act of 1930, as amended, 19 U.S.C. § 1337, the administrative law judge shall issue a recommended determination concerning the appropriate remedy in the event that the Commission finds a violation of section 337, and the amount of bond to be posted by respondent during Presidential review of the Commission action under section 337(j). See 19 C.F.R. § 210.42(a)(1)(ii). The Commission has broad discretion in selecting the form, scope, and extent of the remedy in a section 337 proceeding. Viscofan, S.A. v. Int’l Trade Comm’n, 787 F.2d 544, 548 (Fed. Cir. 1986). Under Section 337(d)(1), if the Commission determines as a result of an investigation that there is a violation of section 337, the Commission is authorized to enter either a limited or a general exclusion order. 19 U.S.C. § 1337(d)(1). A limited exclusion order instructs the U.S. Customs and Border Protection (“CBP”) to exclude from entry all articles that are covered by the patent at issue and that originate from a named respondent in the investigation. A general exclusion order instructs the CBP to exclude from entry all articles that are covered by the patent at issue, without regard to source. Certain Purple Protective Gloves, Inv. No. 337-TA-500, Comm’n Op. at 5 (Dec. 22, 2004). Under section 337(f)(1), the Commission may issue a cease and desist order in addition to, or instead of, an exclusion order. 19 U.S.C. § 1337(f)(1). The Commission generally issues a cease and desist order directed to a domestic respondent when there is a “commercially significant” amount of infringing, imported product in the United States that could be sold, thereby undercutting the remedy provided by an exclusion order. See Certain Crystalline Cefadroxil Monohydrate, Inv. No. 337-TA-293, USITC Pub. 2391, Comm’n Op. on Remedy, the Public Interest and Bonding at 37-42 (June 1991); Certain Condensers, Parts Thereof
191 and Prods. Containing Same, Including Air Conditioners for Automobiles, Inv. No. 337-TA-334 (Remand), Comm’n Op. at 26-28 (Sept. 10, 1997). Additionally, during the 60-day period of Presidential review under 19 U.S.C. § 1337(j), “articles directed to be excluded from entry under subsection (d) . . . shall . . . be entitled to entry under bond prescribed by the Secretary in an amount determined by the Commission to be sufficient to protect the complainant from any injury.” See 19 U.S.C. § 1337(j)(3). “The Commission typically sets the bond based on the price differential between the imported infringing product and the domestic industry article or based on a reasonable royalty. However, where the available pricing or royalty information is inadequate, the bond may be set at one hundred (100) percent of the entered value of the infringing product.” Certain Industrial Automation Systems and Components Thereof Including Control Systems, Controllers, Visualization Hardware, Motion and Motor Control Systems, Networking Equipment, Safety Devices, and Power Supplies, Inv. No. 337-TA-1074, Comm’n Op. at 13 (Apr. 23, 2019) (“Automation Systems”) (public version) (citation omitted). A. Limited Exclusion Order Should a violation be found, Tela argues “the Commission’s usual practice is to issue relief extending to the boundaries of the Notice of Investigation to exclude any infringing products.” CIB at 190 (citing Certain Erasable Programmable Read Only Memories, Components Thereof, Prods. Containing Such Memories, and Processes for Making Such Memories, Inv. No. 337-TA- 276, Comm’n Op. at 9-11 (Aug. 1, 1991)). Thus, Tela contends a limited exclusion order should issue against all of Respondents’ infringing products. Id. In relevant part, Tela opposes any certification provisions because Respondents’ mentions of new processor products “are Intel 14nm or smaller Tri-Gate integrated circuits . . . within the scope of the NOI and subject to exclusion.”
192 CRB at 100. Tela suggests that Respondents should leverage the advisory opinion process for any future products, and that they have not shown the need for warranty or repair exemptions. See id. In its public interest discussion, Tela argues any delay on a remedy is not warranted, but if implemented should be limited to six months—the same time Intel claimed in interrogatory responses that it could design around the Asserted Patents. CRB at 95-96 (citing CX-0007C at *1150; CX-1235C at Q/A 216-218, 221). Respondents do not challenge that a limited exclusion should issue, but argue public interest considerations warrant several adjustments, including: a delay of at least twelve months, the order should not extend to Respondents’ downstream products, and applicability only to products for which respondent Intel is the importer of record. RIB at 196-197; see RRB at 100. As to the delay, Respondents claim it would take RIB at 196-197 (citing CX-1220C at 253:12-19; CX-1223C at 137:17-138:6; RX-0002C at Q/A 165-169). Respondents also contend it serves “to allow Respondents and other impacted companies time to begin implementing substitute processors and/or moving manufacturing overseas.” RIB at 196; RRB at 100. Additionally, Respondents argue the remedy should allow for: certification provisions, Government exemptions under 19 U.S.C. § 1337(l), and service and repair exemptions. See RIB at 197. The Staff emphasizes that “[t]he Commission has ‘broad discretion in selecting the form, scope and extent of the remedy.’” SIB at 123 (citing Viscofan, S.A. v. Int’l Trade Comm’n, 787 F.2d 544, 548 (Fed. Cir. 1986); Fuji Photo Film v. Int’l Trade Comm’n, 386 F.3d 1095, 1106-1107 (Fed. Cir. 2004)). The Staff does not support downstream product exemptions as described by Respondents (id. at 124), or service, repair, and replacement exceptions (id. at 124-125
193 (“Respondents also ask for a repair exemption, although they cite only scant evidence of repair and maintenance activities.”)). The Staff does support including the Commission’s standard certification provision (id. at 125) and a delay to the effective date by several months to alleviate the impact on third parties (id. at 132). On this latter point, the Staff notes, as Tela did, that “Respondents admit that a design-around could be completed in as little as six months.” Id. (citing CX-0007C at *1150). The record supports imposition of a limited exclusion order with a delay of 12 months and a standard certification provision. Respondents’ consideration of EPROMs factors and their requests for certification provisions and service and repair modifications are explained only through an incorporation by reference of their pre-hearing brief, which violates Ground Rule 13.5. See RIB at 197 (citing RPB at 393-396); Order No. 2; see generally RRB at 93-100. As such, these arguments are not considered. The government exemption under 19 U.S.C. § 1337(l) is included in exclusion orders as a matter of course and need not be discussed. As to service and repair exceptions, no other party supports them, and I do not recommend they be included in any exclusion orders. As to a delay, should an exclusion order issue, Tela and the Staff largely draw upon Respondents’ contentions in this investigation for their six-month figure, but the contentions state a redesign would take at least 6 months. CX-0007C at *1150 (“Intel would likely need to change the early stages or lower level of the wafer fabrication process to avoid the adjudicated scope of Tela’s asserted patent claims. The lower level the modification, the longer the redesign will take, because a low level modification has ripple effects for all subsequent levels of the fabrication process. Thus, a redesign of Intel Accused Products would likely take at least 6 months to complete.”)). It seems unlikely that designs could change, in ways acceptable to fabrication and
194 performance needs, in that timeframe. That six-month figure also does not appear to take into account the changes non-party customers would need to implement subsequent to the redesign, or the time needed to switch processor suppliers. Credible testimony on this point supports accommodating at least an additional six months. See CX-1220C at 253:12-257:7; CX-1223C at 137:14-139:9. Finally, as to certification provisions, the Commission has instructed that “[c]ertification provisions aid U.S. Customs and Border Protection (‘CBP’) in enforcing Commission orders but ‘do not mandate that CBP accept certification as proof that the articles in question are not covered’ by the limited exclusion order.” Certain Robotic Vacuum Cleaning Devices and Components Thereof Such as Spare Parts, Inv. No. 337-TA-1057, Comm’n Op. at 55 (Feb. 1, 2019). Additionally, “[t]he standard provision does not allow an importer to simply certify that it is not violating the exclusion order. Rather, CBP only accepts a certification that the goods have been previously determined by CBP or the Commission not to violate the exclusion order” and “it has been Commission practice for the past several years to include certification provisions in its exclusion orders to aid CBP.” See Road Milling Machines, Inv. No. 337-TA-1067, Comm’n Op. at 15, 15 n. 5 (citations omitted). Respondents do not appear to argue for any non-standard certification provision, so it is my recommendation that any limited exclusion order include the Commission’s standard certification provision. B. Cease and Desist Order Should a violation be found, Tela argues cease and desist orders should issue because “[e]ach Respondent stipulated that it maintains a commercially significant inventory of Accused Products in the U.S.” CIB at 191 (citing JX-0017C; JX-0018C; JX-0019C; JX-0020C; JX-0021C; CX-1145C at Q/A 233-278). Tela specifies that the orders should preclude activities including
195 “(1) maintenance, warranty, and repair, (2) sale, including of any inventory, (3) sales and/or marketing, and (4) importation.” Id. Respondents generally apply their argument on exemptions and limitations to an exclusion order to any issuing cease and desist orders. See RIB at 196-197; RRB at 100. The Staff supports cease and desist orders should a violation be found, again noting the stipulations entered into by each respondent. SIB at 126-127; SRB at 50. The Staff does, however, question how certain of Tela’s public interest propositions comport with a cease and desist order that prevents Intel from selling to third-parties for later importation. See SIB at 127; SRB art 49. Complainants bear the burden on the issue of cease and desist orders. Certain Microfluidic Devices, Inv. No. 337-TA-1068, Comm’n Op. at 23 (Jan. 10, 2020). Such orders “are generally issued when, with respect to the imported infringing products, respondents maintain commercially significant inventories in the United States or have significant domestic operations that could undercut the remedy provided by an exclusion order.” Id. at 22-23 (citations omitted). Given the stipulations referenced above, this inventory requirement is met and it is my recommendation that cease and desist orders should issue against each respondent. It is also my recommendation that the cease and desist orders be delayed for twelve months in parallel with the exclusion orders. C. Bond The Commission has held that “[t]he complainant bears the burden of establishing the need for a bond” during the Presidential Review period. See Robotic Vacuums, Inv. No. 337-TA-1057, Comm’n Op. at 68. Tela does not seek a bond. See CIB at 190-191; RIB at 196 (citing CPB at 386); SIB at 128. Therefore, it is my recommendation that, in the event of a violation, no bond requirement should issue.
196 D. Public Interest As determined above, there has been no violation of section 337. Assuming a violation is found, however, it is recommended that the remedial orders include: limited exclusion orders directed to each respondent, including certification provisions and a twelve-month enforcement delay; and cease-and-desist orders, also directed to each respondent and including twelve-month enforcement delays. The remaining issue for this recommended determination is to identify the effects which these orders would have upon the public interest and consider whether those effects are so prejudicial as to justify the denial of any remedy. The Commission has explained: Section 337 requires the Commission, upon finding a violation of section 337, to issue an LEO “unless, after considering the effect of such exclusion upon the public health and welfare, competitive conditions in the United States economy, the production of like or directly competitive articles in the United States, and United States consumers, it finds that such articles should not be excluded from entry.” 19 U.S.C. § 1337(d)(l). Similarly, the Commission must consider these public interest factors before issuing a CDO. 19 U.S.C. § 1337(f)(1). Certain Electronic Nicotine Delivery Systems and Components Thereof, Inv. No. 337-TA-1139, Comm’n Op. at 16 (May 5, 2020). The Respondents contend public interest factors should preclude a remedy; the Staff does not. RIB at 183; see SIB at 132; CIB at 177-178. For the reasons discussed below, it is not my recommendation that public interest considerations should preclude the issuance of the recommended remedy. 1. Public Health and Welfare As to public health and welfare, the record does not weigh one way or the other. Respondents argue the orders would “exclude Intel microprocessors that supply over 95% of the U.S. server market segment and large percentages of the U.S. workstation, supercomputer, and personal computer market segments” leading to reduced output and employment in the U.S., slow the pace of innovation, and disrupt other interests and industries. RIB at 191 (citing RX-0004C at
197 Q/A 94-97, 104-110). Specifically, Respondents predict a massive shortfall of x86 processors in the U.S., with the domestic computer manufacturing industry reducing output by 82% and losing 200,000 jobs (id. at 191-192 (citing RX-0004C at Q/A 157-161)), with a loss of sales that would cause Intel to cut its research budget (id. at 192 (citing RX-0004C at Q/A 44-48, 139; RX-0006C at Q/A 128-130)). As to other interests, Respondents explain “[t]he Proposed Orders would immediately deprive a broad number of U.S. industries, including healthcare, cloud computing, advanced research, and education, of the cutting-edge technology they require.” RIB at 192 (citing RX-0004C at Q/A 133-172; RX-0011C at Q/A 87-91; RX-0006C at Q/A 54-131)); see RIB at 192-193. On this topic, only Respondents’ discussions of the healthcare, research, and education are material, and Respondents have not explained with particularity why these sectors would be harmed by the exclusion orders as opposed to generally observing that they use Accused Products in support of their missions. See, e.g., RIB at 192-193 (citing Hr’g Tr. at 1040:3-6); Hr’g Tr. at 1039:20-1040:22 (“If those hospitals or those companies weren’t – didn’t have access to the latest advances in technology, we wouldn’t be able to get down to the specific genome in a DNA strand that allows you to target precision medicine for cancer. They wouldn’t be able to do some of the research that they have been able to do around Alzheimer’s. They wouldn’t be able to do early spinal cancer detection.”). The Commission has explained “[t]he relevant issue is not whether there is a public health and welfare benefit provided by blood cholesterol testing generally, but rather whether the exclusion of the Accused Products will negatively impact the public health and welfare.” Certain Blood Cholesterol Testing Strips and Associated Systems Containing the Same, Inv. No. 337-TA-1116, Comm’n Op. at 34 (May 1, 2020). This is a critical omission, because Tela’s expert, Dr. Akemann, persuasively testified that there are acceptable substitute x86 processors from AMD in the same sectors discussed by
198 Respondents. See RIB at 182-183 (citations omitted); CX-1146C at Q/A 267-302, 616-620; RRB at 95 (“The accused Intel processors are x86 processors.”). Respondents’ response to substitution by AMD is mainly that they are not drop-in replacements, that AMD is not compatible with some of Intel’s unique features such as Optane memory, and that AMD chips generally “do not support the ecosystem of Intel performance, power, and security features described above.” See RIB at 188. These incompatibilities, however, are neither unexpected nor insurmountable and otherwise do not take away from the evidence showing AMD x86 processors could substitute even if they have historically had low market share. See, e.g., CRB at 92-93, RX-0004C at Q/A 104-112. Indeed, many of the non-Intel respondents sell computer products including or intended for AMD processors, and which are comparable to their respective Accused Products (see, e.g., CIB at 181 (citing CX-0426; CX-0427), 182 (citing CX-0451; CX-0905; CX-0115; CX-0116; CX-1473; CX- 0969; CX-0215; CX-0585; CX-0214; CX-0353C; CX-0584; CX-0897; JX-0227; CX-0142; RX- 0966; RX-0967; RX-0968; RX-0969; RX-0976)), and given the prospective nature of the relief, AMD’s rise in desktop, mobile, and server market share and technological competitiveness is particularly relevant (see CIB at 179-180 (citing, inter alia, CX-1599 at *2-4; CX-1002; CX-0986; CX-1600; RX-0966; CX-1011; RX-0987; JX-0316; JX-0323C; CX-1407; JX-0186C at *3; RX- 0805C at *2)). As to slowed innovation (RIB at 192), this is limited to Intel and its own financial constraints, and the national security complications Respondents warn of (id.) are greatly ameliorated by 19 U.S.C. § 1337(l). Further, it is reasonable to assume at this stage that the impact on public health and welfare from computer manufacturers, software designers, and end users switching to AMD-based products (if even necessary given Respondents’ claims of redesign), and
199 difficulties for AMD itself to ramp up production, would be lessened by a delay in enforcement of the exclusion orders. See SIB at 131. 2. Competitive Conditions in the United States Economy As to competitive conditions, this factor partially weighs in favor of precluding a remedy. Respondents state “[t]he accused Intel processors are x86 processors” (RRB at 95) and Tela’s expert, Dr. Akemann, acknowledges that only two companies have an x86 license—AMD and Intel (CX-1146C at Q/A 292 (citing CX-0548C at -7978)). Dr. Akemann does not discuss the possibility of new entrants to the x86 field (CX-1146C at Q/A 226, 267, 268, 275; see generally CX-1146C at Q/A 303-602 (discussing non-AMD entities and no mention of x86)), which logically results in a one-supplier market and weaker competition in the United States economy for all x86 applications (see RIB at 194). Tela’s arguments regarding importers of record (CRB at 89) and non-respondent, non-licensed, companies’ continuing ability to import substantial quantities of Accused Products (CIB at 187) are not persuasive. A limited exclusion order would prevent respondent Intel from importing but also selling for importation its Accused Products into the United States. As the Intel Accused Products are essentially all packaged, or finished, overseas (RIB at 189-190 (citing, inter alia, RX-0005C at Q/A 22-36, 58-73)), their entrance into the United States would somehow require Intel to sell them on terms that prohibit this act, with the customer then doing so anyway. This is an unrealistic scenario. The record does show, however, that there are additional vendors and solutions for the server, cloud, and supercomputing environments where x86 is not required, even if not preferred at present. CIB at 183-186 (describing ARM-based processors, IBM processors, and Nvidia GPUs); RRB at 96 (“[T]he examples Tela cites in its brief are examples where non-x86 processor suppliers compete on the margins for business from consumers who are willing to buy non-x86-
200 based products for a minority of applications.”). So competitive conditions in these sectors may be less affected by the remedial orders. 3. Production of Like or Directly Competitive Articles in the United States The product of like or directly competitive articles in the United States does not weigh in favor of precluding a remedy. As noted above, the reason the Commission has jurisdiction over the Intel Accused Products is because they are fabricated in wafer form in the United States but packaged, or finished, overseas (known as assembly, test, and packaging (ATM)) before importation. RIB at 189-190. The record shows Intel has, at present, limited ATM operations inside the United States, which process about units per year. RIB at 190 (citing CX- 1146C at Q/A 250; RX-0005C at Q/A 59, 61). Increasing these domestic operations, by any amount, would avoid the remedial orders presently considered and increase the production of articles in the United States. Further, and with respect to Respondents’ predicted loss of computer manufacturing jobs (e.g., building/assembling computers with Intel processors) (see RIB at 184- 185), some portion of these can be expected to remain and shift to non-Intel products (such as AMD) in the timeframe allowed by delayed enforcement of the exclusion orders. This has in fact recently occurred due to market-based supply shortages. See CX-1600 (“In a bid to lower the impact of Intel CPU shortages, ASUS and other makers of PCs and components have developed more AMD-based products.”). Overall, it is likely there would be an increase in domestic production of Intel-like articles. 4. Effect upon United States Consumers The effect upon United States consumers slightly favors precluding a remedy. As explained above, the competition for products in the x86 architecture space will be cut in half and it is safe to assume prices for end users (i.e., consumers) will increase as a result. With the loss of
201 Intel products, the non-x86 spaces will also likely see price increases. The evidence is limited as to the extent of those increases, however. RIB at 196 (citing RX-0004C at Q/A 187-193; RX- 0011C at Q/A 115). Respondents’ arguments regarding OEMs and ODMs (see id.) as actors in the supply chain of downstream devices are not relevant here, because they are not end users. 5. Conclusion In conclusion, a weighing of the factors above does not support outright preclusion of any remedy should a violation be found. The economic impact upon entities who incorporate the Intel Accused Products into their own computer products, and are not named respondents to this investigation, will have the benefit of a delayed enforcement to prepare their operations. Further, it has not been shown that industries with ties to public health and welfare are particularly dependent on the Accused Products, or that the Accused Products are uniquely suited for their computing needs, other than the fact that Intel currently enjoys dominant market share. Additionally, while there will undoubtedly be significantly decreased competition for x86 processor products, and lesser competition in others, this is a natural consequence of the right to exclude under a patent—even in industries as critical as information technology. See Certain Personal Data and Mobile Communications Devices and Related Software, Inv. No. 337-TA-710, Comm’n Op. at 69, 83-84 (Dec. 29, 2011). Further, Tela claims, and Respondents do not dispute, that Intel could theoretically employ the services of licensed semiconductor manufacturers TSMC and Samsung to make Intel-designed products—thereby alleviating much of the supply disruption which is the basis of Respondents’ public interest concerns. CIB at 187. Further still, to the extent these remedial orders manage to devastate the public interest in the ways alleged by Respondents, the Commission provides modification proceedings for this exact event, which will undoubtedly be acted upon swiftly. 19 C.F.R. § 210.76 (“Whenever any person believes that changed conditions of fact or law, or the public interest, require that an exclusion order, cease and desist
202 order, or consent order be modified or set aside . . . the Commission make a determination that the conditions which led to the issuance of an exclusion order, cease and desist order, or consent order no longer exist”).
203 IX. INITIAL DETERMINATION AND ORDER Based on the foregoing, 10 it is my Initial Determination that there is no violation of Section 337 of the Tariff Act of 1930, as amended, 19 U.S.C. § 1337, in the importation into the United States, the sale for importation, or the sale within the United States after importation of certain integrated circuits and products containing the same, in connection with the asserted claims of U.S. Patent Nos. 10,141,334 and 10,186,523. Furthermore, it is my determination that a domestic industry in the United States that practices or exploits the asserted patents does not exist. This Initial Determination, together with the record of the hearing in this investigation consisting of the transcript of the evidentiary hearing, with appropriate corrections as may hereafter be ordered, and the exhibits accepted into evidence in this investigation, is hereby certified to the Commission. 11 Pursuant to 19 C.F.R. § 210.42(h), this Initial Determination shall become the determination of the Commission sixty (60) days after the date of service of the Initial Determination, unless a party files a petition for review of the Initial Determination within twelve (12) business days after service of the Initial Determination pursuant to 19 C.F.R. § 210.43(a) or the Commission, pursuant to 19 C.F.R. § 210.44, orders on its own motion, a review of the Initial Determination or certain issues therein. Any issue or argument not raised in a petition for review, 10 The failure to discuss any matter raised by the parties or any portion of the Record herein does not indicate that said matter was not considered. Rather, any such matter(s) or portion(s) of the Record has/have been determined to be irrelevant, immaterial or meritless. Arguments made on brief which were otherwise unsupported by Record evidence or legal precedent have been accorded no weight. 11 The pleadings of the parties filed with the Secretary need not be certified as they are already in the Commission’s possession in accordance with Commission rules.
204 or response thereto, will be deemed to have been abandoned and may be disregarded by the Commission in reviewing the Initial Determination pursuant to 19 C.F.R. § 210.43(b) and (c).
205 Confidentiality Notice: This Initial Determination is being issued as confidential, and a public version will be issued pursuant to Commission Rule 210.5(f). Within seven (7) days of the date of this Initial Determination, the parties shall jointly submit: (1) a proposed public version of this opinion with any proposed redactions bracketed in red; and (2) a written justification for any proposed redactions specifically explaining why the piece of information sought to be redacted is confidential and why disclosure of the information would be likely to cause substantial harm or likely to have the effect of impairing the Commission’s ability to obtain such information as is necessary to perform its statutory functions. 12 SO ORDERED. ________________________________ Cameron Elliot Administrative Law Judge 12 Under Commission Rules 210.5 and 201.6(a), confidential business information includes: information which concerns or relates to the trade secrets, processes, operations, style of works, or apparatus, or to the production, sales, shipments, purchases, transfers, identification of customers, inventories, or amount or source of any income, profits, losses, or expenditures of any person, firm, partnership, corporation, or other organization, or other information of commercial value, the disclosure of which is likely to have the effect of either impairing the Commission’s ability to obtain such information as is necessary to perform its statutory functions, or causing substantial harm to the competitive position of the person, firm, partnership, corporation, or other organization from which the information was obtained, unless the Commission is required by law to disclose such information. See 19 C.F.R. § 201.6(a). Thus, to constitute confidential business information the disclosure of the information sought to be designated confidential must likely have the effect of either: (1) impairing the Commission’s ability to obtain such information as is necessary to perform its statutory functions; or (2) causing substantial harm to the competitive position of the person, firm, partnership, corporation, or other organization from which the information was obtained.
APPENDIX A
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME 1272 14nm BROADWELL N/A 5Y10 935385 Intel® Core™ M-5Y10 Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R) CELERON(R) 3755U 936718 Intel® Celeron® Processor 3755U (2M Cache, 1.70 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 5Y70 937141 Intel® Core™ M-5Y70 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A N/A 937248 MBL [BROADWELL] Processor ULV 2.00 GHz, 3M Cache, FC-BGA14F, Tray, 15W, FH8065801620203 1272 14nm BROADWELL N/A N/A 937249 MBL [BROADWELL] Processor ULV 2.00 GHz, 3M Cache, FC-BGA14F, Tray, 15W, FH8065801620403 1272 14nm BROADWELL INTEL(R) PENTIUM(R) 3805U 937255 Intel® Pentium® Processor 3805U (2M Cache, 1.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R) CELERON(R) 3755U 937258 Intel® Celeron® Processor 3755U (2M Cache, 1.70 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R) CELERON(R) 3205U 937260 Intel® Celeron® Processor 3205U (2M Cache, 1.50 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 5Y70 937262 Intel® Core™ M-5Y70 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 5Y10 937263 Intel® Core™ M-5Y10 Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 5Y10A 937264 Intel® Core™ M-5Y10a Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 5Y10 937418 Intel® Core™ M-5Y10 Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I7-5600U 937723 Intel® Core™ i7-5600U Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I5-5200U 937726 Intel® Core™ i5-5200U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R) CELERON(R) 3215U 937732 Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I3-5015U 937735 Intel® Core™ i3-5015U Processor (3M Cache, 2.10 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I5-5257U 937776 Intel® Core™ i5-5257U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) PROCESSOR N/A 938695 MBL [SKYLAKE] Processor ULV 1.00 GHz, 4M Cache, FC-BGA14C, Tray, 20W, HE8066201922822 1272 14nm SKYLAKE INTEL (R) PROCESSOR N/A 938728 DT [SKYLAKE] Processor 2.20 GHz, 8M Cache, FC-LGA14C, Tray, 80W, CM8066202070833 1272 14nm BROADWELL N/A 5Y10C 939310 Intel® Core™ M-5Y10c Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 5Y31 939314 Intel® Core™ M-5Y31 Processor (4M Cache, up to 2.40 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 5Y51 939327 Intel® Core™ M-5Y51 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 5Y71 939331 Intel® Core™ M-5Y71 Processor (4M Cache, up to 2.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I7-5600U 939359 Intel® Core™ i7-5600U Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I7-5500U 939360 Intel® Core™ i7-5500U Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I5-5300U 939361 Intel® Core™ i5-5300U Processor (3M Cache, up to 2.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I5-5200U 939362 Intel® Core™ i5-5200U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I3-5010U 939363 Intel® Core™ i3-5010U Processor (3M Cache, 2.10 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I3-5020U 939364 Intel® Core™ i3-5020U Processor (3M Cache, 2.20 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R) CELERON(R) 3765U 939366 Intel® Celeron® Processor 3765U (2M Cache, 1.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R) CELERON(R) 3215U 939367 Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I3-5005U 939368 Intel® Core™ i3-5005U Processor (3M Cache, 2.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I3-5015U 939369 Intel® Core™ i3-5015U Processor (3M Cache, 2.10 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 3825U 939519 Intel® Pentium® Processor 3825U (2M Cache, 1.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A 3825U 939531 Intel® Pentium® Processor 3825U (2M Cache, 1.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I7-5650U 939655 Intel® Core™ i7-5650U Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I5-5350U 939656 Intel® Core™ i5-5350U Processor (3M Cache, up to 2.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I7-5550U 939658 Intel® Core™ i7-5550U Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I5-5250U 939660 Intel® Core™ i5-5250U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I7-5557U 939662 Intel® Core™ i7-5557U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I5-5287U 939670 Intel® Core™ i5-5287U Processor (3M Cache, up to 3.30 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I5-5257U 939672 Intel® Core™ i5-5257U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I3-5157U 939674 Intel® Core™ i3-5157U Processor (3M Cache, 2.50 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL N/A I3-5005U 940707 Intel® Core™ i3-5005U Processor (3M Cache, 2.00 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) PROCESSOR N/A 942317 MBL [SKYLAKE] Processor ULV 1.60 GHz, 4M Cache, FC-BGA14C, Tray, 15W, FJ8066201930823 1272 14nm BROADWELL INTEL(R)XEON(R) D-1540 942392 Intel® Xeon® Processor D-1540 (12M Cache, 2.00 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1520 942393 Intel® Xeon® Processor D-1520 (6M Cache, 2.20 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) PROCESSOR I7-6500U 942759 Intel® Core™ i7-6500U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) PROCESSOR I5-6300U 942760 Intel® Core™ i5-6300U Processor (3M Cache, up to 3.00 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) PROCESSOR I5-6200U 942761 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) PROCESSOR M3-6Y30 942802 Intel® Core™ m3-6Y30 Processor (4M Cache, up to 2.20 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) PROCESSOR M7-6Y75 942808 Intel® Core™ m7-6Y75 Processor (4M Cache, up to 3.00 GHz) FC-BGA14C, Tray INTEL CDX-0003C.0001 CDX-0003C
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL (R) PROCESSOR M5-6Y57 942810 Intel® Core™ m5-6Y57 Processor (4M Cache, up to 2.80 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R) CORE(TM) I5 I5-5675C 942888 Intel® Core™ i5-5675C Processor (4M Cache, up to 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400T 943084 Intel® Core™ i5-6400T Processor (6M Cache, up to 2.80 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700 943086 Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500 943093 Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400 943095 Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500T 943096 Intel® Core™ i5-6500T Processor (6M Cache, up to 3.10 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) PROCESSOR I3-6100U 943140 Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) N/A 943307 SRV [KNIGHTS LANDING] Processor 1.20 GHz, 30M Cache, FC-LGA14B, Tray, 215W, HJ8066702268801 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-5775C 943363 Intel® Core™ i7-5775C Processor (6M Cache, up to 3.70 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R) CORE(TM) I5 I5-5675R 943366 Intel® Core™ i5-5675R Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R) CORE(TM) I5 I5-5575R 943367 Intel® Core™ i5-5575R Processor (4M Cache, up to 3.30 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-5775R 943368 Intel® Core™ i7-5775R Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1270LV4 943401 Intel® Xeon® Processor E3-1270L v4 (6M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1285LV4 943403 Intel® Xeon® Processor E3-1285L v4 (6M Cache, 3.40 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1265LV4 943404 Intel® Xeon® Processor E3-1265L v4 (6M Cache, 2.30 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1284LV4 943407 Intel® Xeon® Processor E3-1284L v4 (6M Cache, 2.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-5850HQ 943430 Intel® Core™ i7-5850HQ Processor (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-5950HQ 943431 Intel® Core™ i7-5950HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-5700HQ 943450 Intel® Core™ i7-5700HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700K 943463 Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400T 943464 Intel® Core™ i5-6400T Processor (6M Cache, up to 2.80 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700 943465 Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700T 943466 Intel® Core™ i7-6700T Processor (8M Cache, up to 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600K 943467 Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600 943468 Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500 943469 Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400 943470 Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500T 943471 Intel® Core™ i5-6500T Processor (6M Cache, up to 3.10 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600T 943472 Intel® Core™ i5-6600T Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400 943473 Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1280V5 943544 Intel® Xeon® Processor E3-1280 v5 (8M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1240V5 943545 Intel® Xeon® Processor E3-1240 v5 (8M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1230V5 943546 Intel® Xeon® Processor E3-1230 v5 (8M Cache, 3.40 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1270V5 943547 Intel® Xeon® Processor E3-1270 v5 (8M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1220V5 943548 Intel® Xeon® Processor E3-1220 v5 (8M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1260LV5 943549 Intel® Xeon® Processor E3-1260L v5 (8M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1225V5 943550 Intel® Xeon® Processor E3-1225 v5 (8M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1275V5 943551 Intel® Xeon® Processor E3-1275 v5 (8M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1245V5 943552 Intel® Xeon® Processor E3-1245 v5 (8M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1235LV5 943553 Intel® Xeon® Processor E3-1235L v5 (8M Cache, 2.00 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1240LV5 943554 Intel® Xeon® Processor E3-1240L v5 (8M Cache, 2.10 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6440HQ 943599 Intel® Core™ i5-6440HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1285V4 943660 Intel® Xeon® Processor E3-1285 v4 (6M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1270LV4 943661 Intel® Xeon® Processor E3-1270L v4 (6M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-5775C 943887 Boxed Intel® Core™ i7-5775C Processor (6M Cache, up to 3.70 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400 943907 Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400 943908 Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1541 943943 Intel® Xeon® Processor D-1541 (12M Cache, 2.10 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1548 943950 Intel® Xeon® Processor D-1548 (12M Cache, 2.00 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1528 943953 Intel® Xeon® Processor D-1528 (9M Cache, 1.90 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1541 944000 Intel® Xeon® Processor D-1541 (12M Cache, 2.10 GHz) FC-BGA14C, Tray CDX-0003C.0002
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm BROADWELL INTEL(R)XEON(R) D-1521 944001 Intel® Xeon® Processor D-1521 (6M Cache, 2.40 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1531 944002 Intel® Xeon® Processor D-1531 (9M Cache, 2.20 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1539 944005 Intel® Xeon® Processor D-1539 (12M Cache, 1.60 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1548 944006 Intel® Xeon® Processor D-1548 (12M Cache, 2.00 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1527 944007 Intel® Xeon® Processor D-1527 (6M Cache, 2.20 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1528 944008 Intel® Xeon® Processor D-1528 (9M Cache, 1.90 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R) PENTIUM(R) D1519 944009 Intel® Pentium® Processor D1519 (6M Cache, 1.50 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1518 944010 Intel® Xeon® Processor D-1518 (6M Cache, 2.20 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R) PENTIUM(R) D1507 944011 Intel® Pentium® Processor D1507 (3M Cache, 1.20 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R) PENTIUM(R) D1508 944012 Intel® Pentium® Processor D1508 (3M Cache, 2.20 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1529 944013 Intel® Xeon® Processor D-1529 (6M Cache, 1.30 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6820EQ 944028 Intel® Core™ i7-6820EQ Processor (8M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400 944035 Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6440EQ 944037 Intel® Core™ i5-6440EQ Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100E 944045 Intel® Core™ i3-6100E Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6822EQ 944047 Intel® Core™ i7-6822EQ Processor (8M Cache, up to 2.80 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6102E 944050 Intel® Core™ i3-6102E Processor (3M Cache, 1.90 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6442EQ 944051 Intel® Core™ i5-6442EQ Processor (6M Cache, up to 2.70 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1505LV5 944067 Intel® Xeon® Processor E3-1505L v5 (8M Cache, 2.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-5700EQ 944074 Intel® Core™ i7-5700EQ Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1278LV4 944075 Intel® Xeon® Processor E3-1278L v4 (6M Cache, 2.00 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-5850EQ 944076 Intel® Core™ i7-5850EQ Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1258LV4 944077 Intel® Xeon® Processor E3-1258L v4 (6M Cache, 1.80 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E3-1283LV4 944090 Intel® Xeon® Processor E3-1283L v4 (6M Cache, 2.90 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) M M5-6Y57 944320 Intel® Core™ m5-6Y57 Processor (4M Cache, up to 2.80 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) M M7-6Y75 944321 Intel® Core™ m7-6Y75 Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) M M5-6Y54 944325 Intel® Core™ m5-6Y54 Processor (4M Cache, up to 2.70 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) M M3-6Y30 944326 Intel® Core™ m3-6Y30 Processor (4M Cache, up to 2.20 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) 4405Y 944330 Intel® Pentium® Processor 4405Y (2M Cache, 1.50 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100U 944334 Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CELERON(R) 3855U 944335 Intel® Celeron® Processor 3855U (2M Cache, 1.60 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CELERON(R) 3955U 944336 Intel® Celeron® Processor 3955U (2M Cache, 2.00 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) 4405U 944337 Intel® Pentium® Processor 4405U (2M Cache, 2.10 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6500U 944339 Intel® Core™ i7-6500U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6300U 944340 Intel® Core™ i5-6300U Processor (3M Cache, up to 3.00 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6600U 944341 Intel® Core™ i7-6600U Processor (4M Cache, up to 3.40 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6820HK 944356 Intel® Core™ i7-6820HK Processor (8M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1535MV5 944365 Intel® Xeon® Processor E3-1535M v5 (8M Cache, 2.90 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1505MV5 944366 Intel® Xeon® Processor E3-1505M v5 (8M Cache, 2.80 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6300HQ 944367 Intel® Core™ i5-6300HQ Processor (6M Cache, up to 3.20 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700HQ 944368 Intel® Core™ i7-6700HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100H 944369 Intel® Core™ i3-6100H Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6440HQ 944370 Intel® Core™ i5-6440HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6920HQ 944371 Intel® Core™ i7-6920HQ Processor (8M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6820HQ 944372 Intel® Core™ i7-6820HQ Processor (8M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1537 944377 Intel® Xeon® Processor D-1537 (12M Cache, 1.70 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R) CORE(TM) I5 I5-5675C 944383 Intel® Core™ i5-5675C Processor (4M Cache, up to 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700K 944458 Boxed Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700 944459 Boxed Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600K 944460 Boxed Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600 944461 Boxed Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C CDX-0003C.0003
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500 944462 Boxed Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400 944464 Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700K 944469 Boxed Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700 944470 Boxed Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600K 944472 Boxed Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600 944473 Boxed Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500 944474 Boxed Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400 944475 Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, for China 1272 14nm BROADWELL INTEL(R)XEON(R) D-1537 944484 Intel® Xeon® Processor D-1537 (12M Cache, 1.70 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R) PENTIUM(R) D1517 944485 Intel® Pentium® Processor D1517 (6M Cache, 1.60 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1240V5 944496 Boxed Intel® Xeon® Processor E3-1240 v5 (8M Cache, 3.50 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1230V5 944497 Boxed Intel® Xeon® Processor E3-1230 v5 (8M Cache, 3.40 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1270V5 944498 Boxed Intel® Xeon® Processor E3-1270 v5 (8M Cache, 3.60 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1275V5 944499 Boxed Intel® Xeon® Processor E3-1275 v5 (8M Cache, 3.60 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1245V5 944500 Boxed Intel® Xeon® Processor E3-1245 v5 (8M Cache, 3.50 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1220V5 944506 Boxed Intel® Xeon® Processor E3-1220 v5 (8M Cache, 3.00 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1225V5 944507 Boxed Intel® Xeon® Processor E3-1225 v5 (8M Cache, 3.30 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3900E 944534 Intel® Celeron® Processor G3900E (2M Cache, 2.40 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3902E 944537 Intel® Celeron® Processor G3902E (2M Cache, 1.60 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R) CORE(TM) I5 I5-5675C 944548 Boxed Intel® Core™ i5-5675C Processor (4M Cache, up to 3.60 GHz) FC-LGA14C 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2695V4 944676 Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2696V4 944679 Intel® Xeon® Processor E5-2696 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6300 944894 Intel® Core™ i3-6300 Processor (4M Cache, 3.80 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6300T 944897 Intel® Core™ i3-6300T Processor (4M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100T 944899 Intel® Core™ i3-6100T Processor (3M Cache, 3.20 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100 944901 Intel® Core™ i3-6100 Processor (3M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400 944906 Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400T 944925 Intel® Pentium® Processor G4400T (3M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3900T 944927 Intel® Celeron® Processor G3900T (2M Cache, 2.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6260U 945073 Intel® Core™ i5-6260U Processor (4M Cache, up to 2.90 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6320 945192 Intel® Core™ i3-6320 Processor (4M Cache, 3.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6300 945193 Intel® Core™ i3-6300 Processor (4M Cache, 3.80 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6300T 945205 Intel® Core™ i3-6300T Processor (4M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100T 945206 Intel® Core™ i3-6100T Processor (3M Cache, 3.20 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100 945208 Intel® Core™ i3-6100 Processor (3M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4500 945269 Intel® Pentium® Processor G4500 (3M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4520 945298 Intel® Pentium® Processor G4520 (3M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400T 945362 Intel® Pentium® Processor G4400T (3M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4500T 945382 Intel® Pentium® Processor G4500T (3M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3900T 945383 Intel® Celeron® Processor G3900T (2M Cache, 2.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3900 945385 Intel® Celeron® Processor G3900 (2M Cache, 2.80 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3920 945387 Intel® Celeron® Processor G3920 (2M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL N/A I5-5200U 945390 Intel® Core™ i5-5200U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2695V4 945399 Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2696V4 945449 Intel® Xeon® Processor E5-2696 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2695V4 945450 Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) N/A 945460 SRV [BROADWELL] Processor 2.10 GHz, 20M Cache, 8.000 GT/s Intel® QPI, FC-LGA14A, Tray, 85W, CM8066002032201 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6300 945908 Boxed Intel® Core™ i3-6300 Processor (4M Cache, 3.80 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6300T 945909 Boxed Intel® Core™ i3-6300T Processor (4M Cache, 3.30 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100T 945910 Boxed Intel® Core™ i3-6100T Processor (3M Cache, 3.20 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100 945911 Boxed Intel® Core™ i3-6100 Processor (3M Cache, 3.70 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3900 945912 Boxed Intel® Celeron® Processor G3900 (2M Cache, 2.80 GHz) FC-LGA14C CDX-0003C.0004
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3920 945913 Boxed Intel® Celeron® Processor G3920 (2M Cache, 2.90 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6300 945914 Boxed Intel® Core™ i3-6300 Processor (4M Cache, 3.80 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100T 945917 Boxed Intel® Core™ i3-6100T Processor (3M Cache, 3.20 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100 945918 Boxed Intel® Core™ i3-6100 Processor (3M Cache, 3.70 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3900 945919 Boxed Intel® Celeron® Processor G3900 (2M Cache, 2.80 GHz) FC-LGA14C, for China 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2683V4 945949 Intel® Xeon® Processor E5-2683 v4 (40M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2698V4 945951 Intel® Xeon® Processor E5-2698 v4 (50M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400 946002 Boxed Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4500 946003 Boxed Intel® Pentium® Processor G4500 (3M Cache, 3.50 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400 946004 Boxed Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4520 946006 Boxed Intel® Pentium® Processor G4520 (3M Cache, 3.60 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400 946007 Boxed Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4500 946008 Boxed Intel® Pentium® Processor G4500 (3M Cache, 3.50 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400 946009 Boxed Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, for China 1272 14nm BROADWELL INTEL(R) PENTIUM(R) D1509 946072 Intel® Pentium® Processor D1509 (3M Cache, 1.50 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6320 946089 Boxed Intel® Core™ i3-6320 Processor (4M Cache, 3.90 GHz) FC-LGA14C 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2690V4 946091 Intel® Xeon® Processor E5-2690 v4 (35M Cache, 2.60 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2660V4 946093 Intel® Xeon® Processor E5-2660 v4 (35M Cache, 2.00 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2680V4 946098 Intel® Xeon® Processor E5-2680 v4 (35M Cache, 2.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2650LV4 946099 Intel® Xeon® Processor E5-2650L v4 (35M Cache, 1.70 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2658V4 946107 Intel® Xeon® Processor E5-2658 v4 (35M Cache, 2.30 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6560U 946138 Intel® Core™ i7-6560U Processor (4M Cache, up to 3.20 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6260U 946143 Intel® Core™ i5-6260U Processor (4M Cache, up to 2.90 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6167U 946152 Intel® Core™ i3-6167U Processor (3M Cache, 2.70 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 946153 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6567U 946157 Intel® Core™ i7-6567U Processor (4M Cache, up to 3.60 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6287U 946159 Intel® Core™ i5-6287U Processor (4M Cache, up to 3.50 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6267U 946160 Intel® Core™ i5-6267U Processor (4M Cache, up to 3.30 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6660U 946161 Intel® Core™ i7-6660U Processor (4M Cache, up to 3.40 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6360U 946162 Intel® Core™ i5-6360U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6785R 946208 Intel® Core™ i7-6785R Processor (8M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2699V4 946675 Intel® Xeon® Processor E5-2699 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2683V4 946676 Intel® Xeon® Processor E5-2683 v4 (40M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2697V4 946678 Intel® Xeon® Processor E5-2697 v4 (45M Cache, 2.30 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2698V4 946679 Intel® Xeon® Processor E5-2698 v4 (50M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2676V4 946681 Intel® Xeon® Processor E5-2676 v4 (40M Cache, 2.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2697AV4 946684 Intel® Xeon® Processor E5-2697A v4 (40M Cache, 2.60 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2682V4 946687 Intel® Xeon® Processor E5-2682 v4 (40M Cache, 2.50 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2679V4 946688 Intel® Xeon® Processor E5-2679 v4 (50M Cache, 2.50 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2689V4 946690 Intel® Xeon® Processor E5-2689 v4 (25M Cache, 3.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2686V4 946691 Intel® Xeon® Processor E5-2686 v4 (45M Cache, 2.30 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6650U 946722 Intel® Core™ i7-6650U Processor (4M Cache, up to 3.40 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2673V4 946773 Intel® Xeon® Processor E5-2673 v4 (50M Cache, 2.30 GHz) FC-LGA14A, Tray 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8330 947028 Intel Atom® x5-Z8330 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2609V4 947112 Intel® Xeon® Processor E5-2609 v4 (20M Cache, 1.70 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2637V4 947115 Intel® Xeon® Processor E5-2637 v4 (15M Cache, 3.50 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2667V4 947117 Intel® Xeon® Processor E5-2667 v4 (25M Cache, 3.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1603V4 947135 Intel® Xeon® Processor E5-1603 v4 (10M Cache, 2.80 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700K 947200 Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400T 947201 Intel® Core™ i5-6400T Processor (6M Cache, up to 2.80 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700 947202 Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700T 947203 Intel® Core™ i7-6700T Processor (8M Cache, up to 3.60 GHz) FC-LGA14C, Tray CDX-0003C.0005
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600K 947204 Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600 947205 Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500 947206 Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400 947207 Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500T 947208 Intel® Core™ i5-6500T Processor (6M Cache, up to 3.10 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600T 947209 Intel® Core™ i5-6600T Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1280V5 947224 Intel® Xeon® Processor E3-1280 v5 (8M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1240V5 947225 Intel® Xeon® Processor E3-1240 v5 (8M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1230V5 947228 Intel® Xeon® Processor E3-1230 v5 (8M Cache, 3.40 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1270V5 947229 Intel® Xeon® Processor E3-1270 v5 (8M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1220V5 947230 Intel® Xeon® Processor E3-1220 v5 (8M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1260LV5 947234 Intel® Xeon® Processor E3-1260L v5 (8M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1225V5 947247 Intel® Xeon® Processor E3-1225 v5 (8M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1275V5 947248 Intel® Xeon® Processor E3-1275 v5 (8M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1245V5 947249 Intel® Xeon® Processor E3-1245 v5 (8M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1235LV5 947250 Intel® Xeon® Processor E3-1235L v5 (8M Cache, 2.00 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1240LV5 947252 Intel® Xeon® Processor E3-1240L v5 (8M Cache, 2.10 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700TE 947253 Intel® Core™ i7-6700TE Processor (8M Cache, up to 3.40 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1268LV5 947254 Intel® Xeon® Processor E3-1268L v5 (8M Cache, 2.40 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500TE 947257 Intel® Core™ i5-6500TE Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100TE 947268 Intel® Core™ i3-6100TE Processor (4M Cache, 2.70 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) G4400TE 947270 Intel® Pentium® Processor G4400TE (3M Cache, 2.40 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3900TE 947271 Intel® Celeron® Processor G3900TE (2M Cache, 2.30 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1581 947370 Intel® Xeon® Processor D-1581 (24M Cache, 1.80 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1571 947371 Intel® Xeon® Processor D-1571 (24M Cache, 1.30 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1587 947372 Intel® Xeon® Processor D-1587 (24M Cache, 1.70 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1577 947373 Intel® Xeon® Processor D-1577 (24M Cache, 1.30 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1567 947374 Intel® Xeon® Processor D-1567 (18M Cache, 2.10 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1557 947375 Intel® Xeon® Processor D-1557 (18M Cache, 1.50 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1559 947376 Intel® Xeon® Processor D-1559 (18M Cache, 1.50 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1240V5 947516 Boxed Intel® Xeon® Processor E3-1240 v5 (8M Cache, 3.50 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1230V5 947517 Boxed Intel® Xeon® Processor E3-1230 v5 (8M Cache, 3.40 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1270V5 947518 Boxed Intel® Xeon® Processor E3-1270 v5 (8M Cache, 3.60 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1220V5 947519 Boxed Intel® Xeon® Processor E3-1220 v5 (8M Cache, 3.00 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1225V5 947521 Boxed Intel® Xeon® Processor E3-1225 v5 (8M Cache, 3.30 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1275V5 947522 Boxed Intel® Xeon® Processor E3-1275 v5 (8M Cache, 3.60 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1245V5 947523 Boxed Intel® Xeon® Processor E3-1245 v5 (8M Cache, 3.50 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400T 947546 Boxed Intel® Core™ i5-6400T Processor (6M Cache, up to 2.80 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700T 947547 Boxed Intel® Core™ i7-6700T Processor (8M Cache, up to 3.60 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500T 947548 Boxed Intel® Core™ i5-6500T Processor (6M Cache, up to 3.10 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600T 947549 Boxed Intel® Core™ i5-6600T Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700K 947558 Boxed Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700 947559 Boxed Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600K 947560 Boxed Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600 947561 Boxed Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500 947562 Boxed Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400 947563 Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700K 947565 Boxed Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700 947566 Boxed Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600K 947567 Boxed Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6600 947568 Boxed Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6500 947569 Boxed Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, for China CDX-0003C.0006
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6400 947570 Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, for China 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7250 947605 Intel® Xeon Phi™ Processor 7250 (16GB, 1.40 GHz, 68 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) N/A 947606 Intel® Xeon Phi™ Processor 7210 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7210 947607 Intel® Xeon Phi™ Processor 7210 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7230 947609 Intel® Xeon Phi™ Processor 7230 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2690V4 947614 Intel® Xeon® Processor E5-2690 v4 (35M Cache, 2.60 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2650V4 947616 Intel® Xeon® Processor E5-2650 v4 (30M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2660V4 947617 Intel® Xeon® Processor E5-2660 v4 (35M Cache, 2.00 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2680V4 947620 Intel® Xeon® Processor E5-2680 v4 (35M Cache, 2.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2650LV4 947622 Intel® Xeon® Processor E5-2650L v4 (35M Cache, 1.70 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2666V4 947623 Intel® Xeon® Processor E5-2666 v4 (30M Cache, 2.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2687WV4 947624 Intel® Xeon® Processor E5-2687W v4 (30M Cache, 3.00 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2658V4 947636 Intel® Xeon® Processor E5-2658 v4 (35M Cache, 2.30 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2628LV4 947637 Intel® Xeon® Processor E5-2628L v4 (30M Cache, 1.90 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2648LV4 947638 Intel® Xeon® Processor E5-2648L v4 (35M Cache, 1.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2671V4 947639 Intel® Xeon® Processor E5-2671 v4 (35M Cache, 2.30 GHz) FC-LGA14A, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 947686 Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500 947688 Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700T 947690 Intel® Core™ i7-7700T Processor (8M Cache, up to 3.80 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600T 947691 Intel® Core™ i5-7600T Processor (6M Cache, up to 3.70 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500T 947692 Intel® Core™ i5-7500T Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400T 947693 Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2695V4 947739 Boxed Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2660V4 947744 Boxed Intel® Xeon® Processor E5-2660 v4 (35M Cache, 2.00 GHz) FC-LGA14A 1273 14nm APOLLO LAKE GENUINE INTEL (R) CPU N/A 947983 DT [APOLLO LAKE] Processor ULV , 2M Cache, FC-BGA15F, Tray, 10W, FH8066802588601 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6402P 947992 Intel® Core™ i5-6402P Processor (6M Cache, up to 3.40 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2683V4 948034 Boxed Intel® Xeon® Processor E5-2683 v4 (40M Cache, 2.10 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2697V4 948035 Boxed Intel® Xeon® Processor E5-2697 v4 (45M Cache, 2.30 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2695V4 948059 Boxed Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6098P 948062 Intel® Core™ i3-6098P Processor (3M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6198DU 948065 Intel® Core™ i5-6198DU Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6498DU 948066 Intel® Core™ i7-6498DU Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6402P 948102 Intel® Core™ i5-6402P Processor (6M Cache, up to 3.40 GHz) FC-LGA14C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) N/A 948107 EMB [APOLLO LAKE] Processor ULV , 2M Cache, FC-BGA15C, Tray, 13W, LH8066802599101 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) N/A 948116 EMB [APOLLO LAKE] Processor ULV , 2M Cache, FC-BGA15C, Tray, 13W, LH8066802599203 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) N/A 948117 EMB [APOLLO LAKE] Processor ULV , 2M Cache, FC-BGA15C, Tray, 9W, LH8066802599304 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2640V4 948123 Intel® Xeon® Processor E5-2640 v4 (25M Cache, 2.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2603V4 948124 Intel® Xeon® Processor E5-2603 v4 (15M Cache, 1.70 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2609V4 948125 Intel® Xeon® Processor E5-2609 v4 (20M Cache, 1.70 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2630LV4 948126 Intel® Xeon® Processor E5-2630L v4 (25M Cache, 1.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2637V4 948127 Intel® Xeon® Processor E5-2637 v4 (15M Cache, 3.50 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2643V4 948128 Intel® Xeon® Processor E5-2643 v4 (20M Cache, 3.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2667V4 948129 Intel® Xeon® Processor E5-2667 v4 (25M Cache, 3.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1620V4 948130 Intel® Xeon® Processor E5-1620 v4 (10M Cache, 3.50 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1650V4 948131 Intel® Xeon® Processor E5-1650 v4 (15M Cache, 3.60 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1680V4 948132 Intel® Xeon® Processor E5-1680 v4 (20M Cache, 3.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2608LV4 948136 Intel® Xeon® Processor E5-2608L v4 (20M Cache, 1.60 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6950X 948137 Intel® Core™ i7-6950X Processor Extreme Edition (25M Cache, up to 3.50 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6900K 948138 Intel® Core™ i7-6900K Processor (20M Cache, up to 3.70 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6850K 948139 Intel® Core™ i7-6850K Processor (15M Cache, up to 3.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6800K 948140 Intel® Core™ i7-6800K Processor (15M Cache, up to 3.60 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2618LV4 948141 Intel® Xeon® Processor E5-2618L v4 (25M Cache, 2.20 GHz) FC-LGA14A, Tray CDX-0003C.0007
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1630V4 948142 Intel® Xeon® Processor E5-1630 v4 (10M Cache, 3.70 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1603V4 948143 Intel® Xeon® Processor E5-1603 v4 (10M Cache, 2.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1607V4 948144 Intel® Xeon® Processor E5-1607 v4 (10M Cache, 3.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2623V4 948145 Intel® Xeon® Processor E5-2623 v4 (10M Cache, 2.60 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1660V4 948146 Intel® Xeon® Processor E5-1660 v4 (20M Cache, 3.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2690V4 948197 Boxed Intel® Xeon® Processor E5-2690 v4 (35M Cache, 2.60 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2650V4 948198 Boxed Intel® Xeon® Processor E5-2650 v4 (30M Cache, 2.20 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2660V4 948199 Boxed Intel® Xeon® Processor E5-2660 v4 (35M Cache, 2.00 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2680V4 948200 Boxed Intel® Xeon® Processor E5-2680 v4 (35M Cache, 2.40 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2687WV4 948206 Boxed Intel® Xeon® Processor E5-2687W v4 (30M Cache, 3.00 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6700HQ 948244 Intel® Core™ i7-6700HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6402P 948516 Boxed Intel® Core™ i5-6402P Processor (6M Cache, up to 3.40 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6098P 948517 Boxed Intel® Core™ i3-6098P Processor (3M Cache, 3.60 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6402P 948518 Boxed Intel® Core™ i5-6402P Processor (6M Cache, up to 3.40 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6098P 948520 Boxed Intel® Core™ i3-6098P Processor (3M Cache, 3.60 GHz) FC-LGA14C, for China 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2609V4 948609 Boxed Intel® Xeon® Processor E5-2609 v4 (20M Cache, 1.70 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1515MV5 948619 Intel® Xeon® Processor E3-1515M v5 (8M Cache, 2.80 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1545MV5 948620 Intel® Xeon® Processor E3-1545M v5 (8M Cache, 2.90 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1575MV5 948621 Intel® Xeon® Processor E3-1575M v5 (8M Cache, 3.00 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6970HQ 948622 Intel® Core™ i7-6970HQ Processor (8M Cache, up to 3.70 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6870HQ 948623 Intel® Core™ i7-6870HQ Processor (8M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6770HQ 948624 Intel® Core™ i7-6770HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6350HQ 948625 Intel® Core™ i5-6350HQ Processor (6M Cache, up to 3.20 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2630V4 948649 Intel® Xeon® Processor E5-2630 v4 (25M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2620V4 948659 Intel® Xeon® Processor E5-2620 v4 (20M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2630V4 948660 Intel® Xeon® Processor E5-2630 v4 (25M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1565LV5 948665 Intel® Xeon® Processor E3-1565L v5 (8M Cache, 2.50 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1585LV5 948666 Intel® Xeon® Processor E3-1585L v5 (8M Cache, 3.00 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1585V5 948668 Intel® Xeon® Processor E3-1585 v5 (8M Cache, 3.50 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8870V4 948733 Intel® Xeon® Processor E7-8870 v4 (50M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-4850V4 948735 Intel® Xeon® Processor E7-4850 v4 (40M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-4830V4 948737 Intel® Xeon® Processor E7-4830 v4 (35M Cache, 2.00 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-4820V4 948738 Intel® Xeon® Processor E7-4820 v4 (25M Cache, 2.00 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-4820V4 948739 Intel® Xeon® Processor E7-4820 v4 (25M Cache, 2.00 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-4809V4 948741 Intel® Xeon® Processor E7-4809 v4 (20M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8867V4 948742 Intel® Xeon® Processor E7-8867 v4 (45M Cache, 2.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8867V4 948743 Intel® Xeon® Processor E7-8867 v4 (45M Cache, 2.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8880V4 948744 Intel® Xeon® Processor E7-8880 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8880V4 948745 Intel® Xeon® Processor E7-8880 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8860V4 948747 Intel® Xeon® Processor E7-8860 v4 (45M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8855V4 948749 Intel® Xeon® Processor E7-8855 v4 (35M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4650V4 948752 Intel® Xeon® Processor E5-4650 v4 (35M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4628LV4 948754 Intel® Xeon® Processor E5-4628L v4 (35M Cache, 1.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4640V4 948756 Intel® Xeon® Processor E5-4640 v4 (30M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4660V4 948758 Intel® Xeon® Processor E5-4660 v4 (40M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4610V4 948762 Intel® Xeon® Processor E5-4610 v4 (25M Cache, 1.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4667V4 948764 Intel® Xeon® Processor E5-4667 v4 (45M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4669V4 948767 Intel® Xeon® Processor E5-4669 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4655V4 948768 Intel® Xeon® Processor E5-4655 v4 (30M Cache, 2.50 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4655V4 948769 Intel® Xeon® Processor E5-4655 v4 (30M Cache, 2.50 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4620V4 948771 Intel® Xeon® Processor E5-4620 v4 (25M Cache, 2.10 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-4627V4 948865 Intel® Xeon® Processor E5-4627 v4 (25M Cache, 2.60 GHz) FC-LGA14A, Tray CDX-0003C.0008
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8891V4 948869 Intel® Xeon® Processor E7-8891 v4 (60M Cache, 2.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8893V4 948871 Intel® Xeon® Processor E7-8893 v4 (60M Cache, 3.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8890V4 948872 Intel® Xeon® Processor E7-8890 v4 (60M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8890V4 948873 Intel® Xeon® Processor E7-8890 v4 (60M Cache, 2.20 GHz) FC-LGA14A, Tray 1273 14nm APOLLO LAKE INTEL(R) PENTIUM® N4200 948985 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2630V4 949003 Boxed Intel® Xeon® Processor E5-2630 v4 (25M Cache, 2.20 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2640V4 949004 Boxed Intel® Xeon® Processor E5-2640 v4 (25M Cache, 2.40 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON® E5-2603V4 949005 Boxed Intel® Xeon® Processor E5-2603 v4 (15M Cache, 1.70 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2609V4 949006 Boxed Intel® Xeon® Processor E5-2609 v4 (20M Cache, 1.70 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1620V4 949007 Boxed Intel® Xeon® Processor E5-1620 v4 (10M Cache, 3.50 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6850K 949174 Intel® Core™ i7-6850K Processor (15M Cache, up to 3.80 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6800K 949175 Intel® Core™ i7-6800K Processor (15M Cache, up to 3.60 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2689V4 949319 Intel® Xeon® Processor E5-2689 v4 (25M Cache, 3.10 GHz) FC-LGA14A, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) N/A 949356 SRV [KNIGHTS LANDING] Processor 1.50 GHz, 36M Cache, FC-LGA14B, Tray, 245W, HJ8066702974700 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) N/A 949367 SRV [KNIGHTS LANDING] Processor 1.30 GHz, 32M Cache, FC-LGA14B, Tray, 230W, HJ8066702975000 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 949415 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2620V4 949499 Boxed Intel® Xeon® Processor E5-2620 v4 (20M Cache, 2.10 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2630V4 949500 Boxed Intel® Xeon® Processor E5-2630 v4 (25M Cache, 2.20 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2699CV4 949756 Intel® Xeon® Processor E5-2699C v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 949784 Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4600 949788 Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3930 949799 Intel® Celeron® Processor G3930 (2M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100T 949805 Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4600T 949807 Intel® Pentium® Processor G4600T (3M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3930T 949811 Intel® Celeron® Processor G3930T (2M Cache, 2.70 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1578LV5 949901 Intel® Xeon® Processor E3-1578L v5 (8M Cache, 2.00 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) E3-1558LV5 949904 Intel® Xeon® Processor E3-1558L v5 (8M Cache, 1.90 GHz) FC-BGA14F, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3900 950313 Intel Atom® Processor E3900 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3900 950318 Intel Atom® Processor E3900 (2M Cache, up to 2.40 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3900 950321 Intel Atom® Processor E3900 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3900 950325 Intel Atom® Processor E3900 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1526 950400 Intel® Xeon® Processor D-1526 (6M Cache, 1.80 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6950X 950624 Boxed Intel® Core™ i7-6950X Processor Extreme Edition (25M Cache, up to 3.50 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6900K 950625 Boxed Intel® Core™ i7-6900K Processor (20M Cache, up to 3.70 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6850K 950626 Boxed Intel® Core™ i7-6850K Processor (15M Cache, up to 3.80 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6800K 950627 Boxed Intel® Core™ i7-6800K Processor (15M Cache, up to 3.60 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6950X 950628 Boxed Intel® Core™ i7-6950X Processor Extreme Edition (25M Cache, up to 3.50 GHz) FC-LGA14A, for China 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6900K 950629 Boxed Intel® Core™ i7-6900K Processor (20M Cache, up to 3.70 GHz) FC-LGA14A, for China 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6850K 950630 Boxed Intel® Core™ i7-6850K Processor (15M Cache, up to 3.80 GHz) FC-LGA14A, for China 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 I7-6800K 950631 Boxed Intel® Core™ i7-6800K Processor (15M Cache, up to 3.60 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-1650V4 950795 Boxed Intel® Xeon® Processor E5-1650 v4 (15M Cache, 3.60 GHz) FC-LGA14A 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 950936 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 950937 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 950938 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7290 951260 Intel® Xeon Phi™ Processor 7290 (16GB, 1.50 GHz, 72 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7290F 951262 Intel® Xeon Phi™ Processor 7290F (16GB, 1.50 GHz, 72 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7250F 951264 Intel® Xeon Phi™ Processor 7250F (16GB, 1.40 GHz, 68 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7250 951266 Intel® Xeon Phi™ Processor 7250 (16GB, 1.40 GHz, 68 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7230F 951268 Intel® Xeon Phi™ Processor 7230F (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7230 951270 Intel® Xeon Phi™ Processor 7230 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7210 951272 Intel® Xeon Phi™ Processor 7210 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray CDX-0003C.0009
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm KNIGHTS LANDING INTEL(R) XEON PHI(TM) 7210F 951274 Intel® Xeon Phi™ Processor 7210F (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6157U 951298 Intel® Core™ i3-6157U Processor (3M Cache, 2.40 GHz) FC-BGA14C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3940 951358 Intel Atom® Processor A3940 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3950 951366 Intel Atom® Processor A3950 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3930 951369 Intel Atom® Processor A3930 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3960 951370 Intel Atom® Processor A3960 (2M Cache, up to 2.40 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL(R) ATOM(TM) C3324 951429 Intel Atom® Processor C3324 (4M Cache, up to 1.70) FC-BGA15Z, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3754 951434 Intel Atom® Processor C3754 (16M Cache, up to 1.70) FC-BGA15Z, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1530 951482 Intel® Xeon® Processor D-1530 (6M Cache, 2.40 GHz) FC-BGA14C, Tray 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951483 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951484 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951485 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) J3355 951489 Intel® Celeron® Processor J3355 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) J3455 951490 Intel® Celeron® Processor J3455 (2M Cache, up to 2.30 GHz) FC-BGA15F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) P-8136 951595 Intel® Xeon® Platinum P-8136 Processor (38.5M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) P-8124 951607 Intel® Xeon® Platinum P-8124 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) P-8136 951616 Intel® Xeon® Platinum P-8136 Processor (38.5M Cache, 2.00 GHz) FC-LGA14B, Tray 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) J3355 951841 Intel® Celeron® Processor J3355 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) J3455 951842 Intel® Celeron® Processor J3455 (2M Cache, up to 2.30 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) J4205 951843 Intel® Pentium® Processor J4205 (2M Cache, up to 2.60 GHz) FC-BGA15F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 951956 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 951957 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 951958 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 951959 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7Y54 951960 Intel® Core™ i5-7Y54 Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) M M3-7Y30 951961 Intel® Core™ m3-7Y30 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2699AV4 952190 Intel® Xeon® Processor E5-2699A v4 (55M Cache, 2.40 GHz) FC-LGA14A, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) E5-2699RV4 952514 Intel® Xeon® Processor E5-2699R v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1280V6 952786 Intel® Xeon® Processor E3-1280 v6 (8M Cache, 3.90 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1270V6 952787 Intel® Xeon® Processor E3-1270 v6 (8M Cache, 3.80 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1240V6 952788 Intel® Xeon® Processor E3-1240 v6 (8M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1230V6 952789 Intel® Xeon® Processor E3-1230 v6 (8M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1220V6 952790 Intel® Xeon® Processor E3-1220 v6 (8M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1275V6 952791 Intel® Xeon® Processor E3-1275 v6 (8M Cache, 3.80 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1245V6 952792 Intel® Xeon® Processor E3-1245 v6 (8M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1225V6 952793 Intel® Xeon® Processor E3-1225 v6 (8M Cache, 3.30 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1205V6 952794 Intel® Xeon® Processor E3-1205 v6 (8M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7600U 952861 Intel® Core™ i7-7600U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300U 952866 Intel® Core™ i5-7300U Processor (3M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3865U 952874 Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1535MV6 952949 Intel® Xeon® Processor E3-1535M (8M Cache, 3.10 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1505MV6 952951 Intel® Xeon® Processor E3-1505M (8M Cache, 3.00 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7920HQ 952952 Intel® Core™ i7-7920HQ Processor (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7820HQ 952954 Intel® Core™ i7-7820HQ Processor (8M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7820HK 952955 Intel® Core™ i7-7820HK Processor (8M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7440HQ 952958 Intel® Core™ i5-7440HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100H 952960 Intel® Core™ i3-7100H Processor (3M Cache, 3.00 GHz) FC-BGA14F, Tray CDX-0003C.00010
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm BROADWELL INTEL(R)XEON(R) E7-8894V4 952962 Intel® Xeon® Processor E7-8894 v4 (60M Cache, 2.40 GHz) FC-LGA14A, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600K 952985 Intel® Core™ i5-7600K Processor (6M Cache, up to 4.20 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4560 952994 Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7101E 952995 Intel® Core™ i3-7101E Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400T 952998 Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600 953000 Intel® Core™ i5-7600 Processor (6M Cache, up to 4.10 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500 953001 Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600T 953002 Intel® Core™ i5-7600T Processor (6M Cache, up to 3.70 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500T 953003 Intel® Core™ i5-7500T Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953004 Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700T 953005 Intel® Core™ i7-7700T Processor (8M Cache, up to 3.80 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700K 953006 Intel® Core™ i7-7700K Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3940 953082 Intel Atom® Processor A3940 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3940 953083 Intel Atom® x5-E3940 Processor (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3950 953084 Intel Atom® Processor A3950 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3950 953085 Intel Atom® x7-E3950 Processor (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3930 953086 Intel Atom® x5-E3930 Processor (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3930 953087 Intel Atom® Processor A3930 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3960 953096 Intel Atom® Processor A3960 (2M Cache, up to 2.40 GHz) FC-BGA15C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 953348 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7Y57 953349 Intel® Core™ i5-7Y57 Processor (4M Cache, up to 3.30 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7600U 953350 Intel® Core™ i7-7600U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300U 953351 Intel® Core™ i5-7300U Processor (3M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 953352 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 953354 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7Y54 953356 Intel® Core™ i5-7Y54 Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) M M3-7Y32 953357 Intel® Core™ m3-7Y32 Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) M M3-7Y30 953358 Intel® Core™ m3-7Y30 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) 4415U 953359 Intel® Pentium® Processor 4415U (2M Cache, 2.30 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3865U 953360 Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3965U 953361 Intel® Celeron® Processor 3965U (2M Cache, 2.20 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) 4410Y 953362 Intel® Pentium® Processor 4410Y (2M Cache, 1.50 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953654 Boxed Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700K 953655 Boxed Intel® Core™ i7-7700K Processor (8M Cache, up to 4.50 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600K 953680 Boxed Intel® Core™ i5-7600K Processor (6M Cache, up to 4.20 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 953681 Boxed Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600 953682 Boxed Intel® Core™ i5-7600 Processor (6M Cache, up to 4.10 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500 953683 Boxed Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600K 953700 Boxed Intel® Core™ i5-7600K Processor (6M Cache, up to 4.20 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 953701 Boxed Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600 953702 Boxed Intel® Core™ i5-7600 Processor (6M Cache, up to 4.10 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500 953703 Boxed Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953712 Boxed Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700K 953713 Boxed Intel® Core™ i7-7700K Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8124M 953855 Intel® Xeon® Platinum 8124M Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5117 953878 Intel® Xeon® Gold 5117 Processor (19.25M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7820EQ 953940 Intel® Core™ i7-7820EQ Processor (8M Cache, up to 3.70 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7440EQ 953941 Intel® Core™ i5-7440EQ Processor (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7442EQ 953942 Intel® Core™ i5-7442EQ Processor (6M Cache, up to 2.90 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100E 953943 Intel® Core™ i3-7100E Processor (3M Cache, 2.90 GHz) FC-BGA14F, Tray CDX-0003C.00011
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7102E 953944 Intel® Core™ i3-7102E Processor (3M Cache, 2.10 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1505LV6 953947 Intel® Xeon® Processor E3-1505L v6 (8M Cache, 2.20 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7320 954022 Intel® Core™ i3-7320 Processor (4M Cache, 4.10 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7300 954023 Intel® Core™ i3-7300 Processor (4M Cache, 4.00 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7350K 954030 Intel® Core™ i3-7350K Processor (4M Cache, 4.20 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954033 Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4620 954035 Intel® Pentium® Processor G4620 (3M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4600 954039 Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3950 954042 Intel® Celeron® Processor G3950 (2M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3930 954043 Intel® Celeron® Processor G3930 (2M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7300T 954045 Intel® Core™ i3-7300T Processor (4M Cache, 3.50 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100T 954047 Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4600T 954049 Intel® Pentium® Processor G4600T (3M Cache, 3.00 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4560T 954051 Intel® Pentium® Processor G4560T (3M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3930T 954053 Intel® Celeron® Processor G3930T (2M Cache, 2.70 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7287U 954104 Intel® Core™ i5-7287U Processor (4M Cache, up to 3.70 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7167U 954106 Intel® Core™ i3-7167U Processor (3M Cache, 2.80 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7267U 954107 Intel® Core™ i5-7267U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7260U 954108 Intel® Core™ i5-7260U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7360U 954110 Intel® Core™ i5-7360U Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7560U 954111 Intel® Core™ i7-7560U Processor (4M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7567U 954112 Intel® Core™ i7-7567U Processor (4M Cache, up to 4.00 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7660U 954113 Intel® Core™ i7-7660U Processor (4M Cache, up to 4.00 GHz) FC-BGA14F, Tray 1273 14nm DENVERTON INTEL(R) ATOM(TM) C3338 954194 Intel Atom® Processor C3338 (4M Cache, up to 2.20 GHz) FC-BGA15C, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400T 954219 Boxed Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600T 954220 Boxed Intel® Core™ i5-7600T Processor (6M Cache, up to 3.70 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500T 954221 Boxed Intel® Core™ i5-7500T Processor (6M Cache, up to 3.30 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700T 954222 Boxed Intel® Core™ i7-7700T Processor (8M Cache, up to 3.80 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400T 954225 Boxed Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7600T 954227 Boxed Intel® Core™ i5-7600T Processor (6M Cache, up to 3.70 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500T 954228 Boxed Intel® Core™ i5-7500T Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700T 954229 Boxed Intel® Core™ i7-7700T Processor (8M Cache, up to 3.80 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7300 954311 Boxed Intel® Core™ i3-7300 Processor (4M Cache, 4.00 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954312 Boxed Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4560 954313 Boxed Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4600 954315 Boxed Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1270V6 954318 Boxed Intel® Xeon® Processor E3-1270 v6 (8M Cache, 3.80 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1240V6 954319 Boxed Intel® Xeon® Processor E3-1240 v6 (8M Cache, 3.70 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1230V6 954320 Boxed Intel® Xeon® Processor E3-1230 v6 (8M Cache, 3.50 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1275V6 954321 Boxed Intel® Xeon® Processor E3-1275 v6 (8M Cache, 3.80 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1245V6 954323 Boxed Intel® Xeon® Processor E3-1245 v6 (8M Cache, 3.70 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1220V6 954324 Boxed Intel® Xeon® Processor E3-1220 v6 (8M Cache, 3.00 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1225V6 954325 Boxed Intel® Xeon® Processor E3-1225 v6 (8M Cache, 3.30 GHz) FC-LGA14C 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 954360 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON® N3450 954361 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 954362 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3940 954396 Intel Atom® Processor A3940 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3950 954399 Intel Atom® Processor A3950 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3950 954401 Intel Atom® x7-E3950 Processor (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) E3930 954402 Intel Atom® x5-E3930 Processor (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3930 954403 Intel Atom® Processor A3930 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3960 954404 Intel Atom® Processor A3960 (2M Cache, up to 2.40 GHz) FC-BGA15C, Tray CDX-0003C.00012
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6126F 954691 Intel® Xeon® Gold 6126F Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7320 954808 Boxed Intel® Core™ i3-7320 Processor (4M Cache, 4.10 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7300 954809 Boxed Intel® Core™ i3-7300 Processor (4M Cache, 4.00 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7350K 954810 Boxed Intel® Core™ i3-7350K Processor (4M Cache, 4.20 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954811 Boxed Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4560 954812 Boxed Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4620 954813 Boxed Intel® Pentium® Processor G4620 (3M Cache, 3.70 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4600 954814 Boxed Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3950 954815 Boxed Intel® Celeron® Processor G3950 (2M Cache, 3.00 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3930 954816 Boxed Intel® Celeron® Processor G3930 (2M Cache, 2.90 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7300 954817 Boxed Intel® Core™ i3-7300 Processor (4M Cache, 4.00 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7350K 954818 Boxed Intel® Core™ i3-7350K Processor (4M Cache, 4.20 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954819 Boxed Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4560 954821 Boxed Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4600 954822 Boxed Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3930 954823 Boxed Intel® Celeron® Processor G3930 (2M Cache, 2.90 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1285V6 955012 Intel® Xeon® Processor E3-1285 v6 (8M Cache, 4.10 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7101TE 955013 Intel® Core™ i3-7101TE Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8180 955025 Intel® Xeon® Platinum 8180 Processor (38.5M Cache, 2.50 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8176 955028 Intel® Xeon® Platinum 8176 Processor (38.5M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8170 955035 Intel® Xeon® Platinum 8170 Processor (35.75M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8168 955036 Intel® Xeon® Platinum 8168 Processor (33M Cache, 2.70 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6150 955037 Intel® Xeon® Gold 6150 Processor (24.75M Cache, 2.70 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8173M 955108 Intel® Xeon® Platinum 8173M Processor (38.5M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8124M 955109 Intel® Xeon® Platinum 8124M Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5117 955110 Intel® Xeon® Gold 5117 Processor (19.25M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8180M 955111 Intel® Xeon® Platinum 8180M Processor (38.5M Cache, 2.50 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8176M 955112 Intel® Xeon® Platinum 8176M Processor (38.5M Cache, 2.10 GHz) FC-LGA14B, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3958 955144 Intel Atom® Processor C3958 (16M Cache, up to 2.0 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3538 955146 Intel Atom® Processor C3538 (8M Cache, up to 2.10 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3750 955157 Intel Atom® Processor C3750 (16M Cache, up to 2.40 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3850 955159 Intel Atom® Processor C3850 (12M Cache, up to 2.40 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3558 955160 Intel Atom® Processor C3558 (8M Cache, up to 2.20 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3758 955161 Intel Atom® Processor C3758 (16M Cache, up to 2.20 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3858 955162 Intel Atom® Processor C3858 (12M Cache, up to 2.0 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3338 955163 Intel Atom® Processor C3338 (4M Cache, up to 2.20 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3808 955164 Intel Atom® Processor C3808 (12M Cache, up to 2.0 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3308 955165 Intel Atom® Processor C3308 (4M Cache, up to 2.10 GHz) FC-BGA15C, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3708 955167 Intel Atom® Processor C3708 (16M Cache, up to 1.70 GHz) FC-BGA15C, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3930E 955177 Intel® Celeron® Processor G3930E (2M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) G3930TE 955178 Intel® Celeron® Processor G3930TE (2M Cache, 2.70 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8167M 955233 Intel® Xeon® Platinum 8167M Processor (35.75M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7300T 955324 Boxed Intel® Core™ i3-7300T Processor (4M Cache, 3.50 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100T 955325 Boxed Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7300T 955326 Boxed Intel® Core™ i3-7300T Processor (4M Cache, 3.50 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100T 955327 Boxed Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8173M 955508 Intel® Xeon® Platinum 8173M Processor (38.5M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6150 955514 Intel® Xeon® Gold 6150 Processor (24.75M Cache, 2.70 GHz) FC-LGA14B, Tray 1273 14nm DENVERTON INTEL(R) ATOM(TM) C3754 955790 Intel Atom® Processor C3754 (16M Cache, up to 1.70) FC-BGA15Z, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6134 955887 Intel® Xeon® Gold 6134 Processor (24.75M Cache, 3.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6134M 955889 Intel® Xeon® Gold 6134M Processor (24.75M Cache, 3.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5122 955974 Intel® Xeon® Gold 5122 Processor (16.5M Cache, 3.60 GHz) FC-LGA14B, Tray CDX-0003C.00013
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8156 955978 Intel® Xeon® Platinum 8156 Processor (16.5M Cache, 3.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6140 955989 Intel® Xeon® Gold 6140 Processor (24.75M Cache, 2.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6142 955993 Intel® Xeon® Gold 6142 Processor (22M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6140M 955996 Intel® Xeon® Gold 6140M Processor (24.75M Cache, 2.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8160 955998 Intel® Xeon® Platinum 8160 Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6142M 956000 Intel® Xeon® Gold 6142M Processor (22M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6136 956002 Intel® Xeon® Gold 6136 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6126 956004 Intel® Xeon® Gold 6126 Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6152 956006 Intel® Xeon® Gold 6152 Processor (30.25M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6138 956008 Intel® Xeon® Gold 6138 Processor (27.5M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6148 956010 Intel® Xeon® Gold 6148 Processor (27.5M Cache, 2.40 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8158 956012 Intel® Xeon® Platinum 8158 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8160M 956014 Intel® Xeon® Platinum 8160M Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6130 956018 Intel® Xeon® Gold 6130 Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6130 956019 Intel® Xeon® Gold 6130 Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8153 956021 Intel® Xeon® Platinum 8153 Processor (22M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8164 956023 Intel® Xeon® Platinum 8164 Processor (35.75M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8170M 956027 Intel® Xeon® Platinum 8170M Processor (35.75M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1501LV6 956300 Intel® Xeon® Processor E3-1501L v6 (6M Cache, up to 2.90 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R)XEON(R) E3-1501MV6 956301 Intel® Xeon® Processor E3-1501M v6 (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3955 956392 Intel Atom® Processor C3955 (16M Cache, up to 2.40 GHz) FC-BGA15C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7740X 957005 Intel® Core™ i7-7740X X-series Processor (8M Cache, up to 4.50 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7740X 957006 Intel® Core™ i7-7740X X-series Processor (8M Cache, up to 4.50 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7640X 957007 Intel® Core™ i5-7640X X-series Processor (6M Cache, up to 4.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4110 957188 Intel® Xeon® Silver 4110 Processor (11M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8175M 957279 Intel® Xeon® Platinum 8175M Processor (33M Cache, 2.50 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8163 957286 Intel® Xeon® Platinum 8163 Processor (33M Cache, 2.50 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6149 957292 Intel® Xeon® Gold 6149 Processor (22M Cache, 3.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6151 957296 Intel® Xeon® Gold 6151 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6161 957297 Intel® Xeon® Gold 6161 Processor (30.25M Cache, 2.20 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) 4415Y 957336 Intel® Pentium® Processor 4415Y (2M Cache, 1.60 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5115 957337 Intel® Xeon® Gold 5115 Processor (13.75M Cache, 2.40 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5120T 957338 Intel® Xeon® Gold 5120T Processor (19.25M Cache, 2.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5120 957339 Intel® Xeon® Gold 5120 Processor (19.25M Cache, 2.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5118 957341 Intel® Xeon® Gold 5118 Processor (16.5M Cache, 2.30 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3965Y 957364 Intel® Celeron® Processor 3965Y (2M Cache, 1.50 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4110 957416 Intel® Xeon® Silver 4110 Processor (11M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4108 957417 Intel® Xeon® Silver 4108 Processor (11M Cache, 1.80 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4114 957418 Intel® Xeon® Silver 4114 Processor (13.75M Cache, 2.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) BRONZE 3106 957419 Intel® Xeon® Bronze 3106 Processor (11M Cache, 1.70 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) BRONZE 3104 957420 Intel® Xeon® Bronze 3104 Processor (8.25M Cache, 1.70 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4112 957421 Intel® Xeon® Silver 4112 Processor (8.25M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4109T 957422 Intel® Xeon® Silver 4109T Processor (11M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6130T 957552 Intel® Xeon® Gold 6130T Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4116 957661 Intel® Xeon® Silver 4116 Processor (16.5M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6132 958178 Intel® Xeon® Gold 6132 Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6128 958179 Intel® Xeon® Gold 6128 Processor (19.25M Cache, 3.40 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6154 958186 Intel® Xeon® Gold 6154 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8160T 958187 Intel® Xeon® Platinum 8160T Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6138T 958188 Intel® Xeon® Gold 6138T Processor (27.5M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6130T 958189 Intel® Xeon® Gold 6130T Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6126T 958190 Intel® Xeon® Gold 6126T Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray CDX-0003C.00014
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6129 958220 Intel® Xeon® Gold 6129 Processor (22M Cache, 2.30 GHz) FC-LGA14B, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3508 958405 Intel Atom® Processor C3508 (8M Cache, up to 1.50) FC-BGA15C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7130U 958406 Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6130F 958465 Intel® Xeon® Gold 6130F Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6126F 958466 Intel® Xeon® Gold 6126F Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8160F 958468 Intel® Xeon® Platinum 8160F Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6142F 958469 Intel® Xeon® Gold 6142F Processor (22M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6148F 958470 Intel® Xeon® Gold 6148F Processor (27.5M Cache, 2.40 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6138F 958471 Intel® Xeon® Gold 6138F Processor (27.5M Cache, 2.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5117F 958478 Intel® Xeon® Gold 5117F Processor (19.25M Cache, 2.00 GHz) FC-LGA14B, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3908 958484 Intel Atom® Processor C3908 (16M Cache, up to 2.00 GHz) FC-BGA15C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1533N 958597 Intel® Xeon® Processor D-1533N (9M Cache, 2.10 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1553N 958598 Intel® Xeon® Processor D-1553N (12M Cache, 2.30 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1513N 958600 Intel® Xeon® Processor D-1513N (6M Cache, 1.60 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1543N 958602 Intel® Xeon® Processor D-1543N (12M Cache, 1.90 GHz) FC-BGA14C, Tray 1272 14nm SKY MEADOW INTEL(R)XEON(R) N/A 958704 [Missing External Name] CD8067303204102 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7900X 958960 Intel® Core™ i9-7900X X-series Processor (13.75M Cache, up to 4.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7800X 958962 Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7820X 958963 Intel® Core™ i7-7820X X-series Processor (11M Cache, up to 4.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8180 958969 Boxed Intel® Xeon® Platinum 8180 Processor (38.5M Cache, 2.50 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8176 958970 Boxed Intel® Xeon® Platinum 8176 Processor (38.5M Cache, 2.10 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8170 958971 Boxed Intel® Xeon® Platinum 8170 Processor (35.75M Cache, 2.10 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8160 958972 Boxed Intel® Xeon® Platinum 8160 Processor (33M Cache, 2.10 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8164 958973 Boxed Intel® Xeon® Platinum 8164 Processor (35.75M Cache, 2.00 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6134 958974 Boxed Intel® Xeon® Gold 6134 Processor (24.75M Cache, 3.20 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5122 958975 Boxed Intel® Xeon® Gold 5122 Processor (16.5M Cache, 3.60 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6140 958976 Boxed Intel® Xeon® Gold 6140 Processor (24.75M Cache, 2.30 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6142 958977 Boxed Intel® Xeon® Gold 6142 Processor (22M Cache, 2.60 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6152 958978 Boxed Intel® Xeon® Gold 6152 Processor (30.25M Cache, 2.10 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6138 958979 Boxed Intel® Xeon® Gold 6138 Processor (27.5M Cache, 2.00 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6148 958981 Boxed Intel® Xeon® Gold 6148 Processor (27.5M Cache, 2.40 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6130 958982 Boxed Intel® Xeon® Gold 6130 Processor (22M Cache, 2.10 GHz) FC-LGA14B 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8350U 959020 Intel® Core™ i5-8350U Processor (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1273 14nm DENVERTON INTEL (R) PROCESSOR C3538 959047 Intel Atom® Processor C3538 (8M Cache, up to 2.10 GHz) FC-BGA15C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 959053 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8650U 959152 Intel® Core™ i7-8650U Processor (8M Cache, up to 4.20 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8350U 959155 Intel® Core™ i5-8350U Processor (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7740X 959157 Boxed Intel® Core™ i7-7740X X-series Processor (8M Cache, up to 4.50 GHz) FC-LGA14B 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7640X 959158 Boxed Intel® Core™ i5-7640X X-series Processor (6M Cache, up to 4.20 GHz) FC-LGA14B 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7740X 959159 Boxed Intel® Core™ i7-7740X X-series Processor (8M Cache, up to 4.50 GHz) FC-LGA14B, for China 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7640X 959161 Boxed Intel® Core™ i5-7640X X-series Processor (6M Cache, up to 4.20 GHz) FC-LGA14B, for China 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959162 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2102 959167 Intel® Xeon® W-2102 Processor (8.25M Cache, 2.90 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2104 959168 Intel® Xeon® W-2104 Processor (8.25M Cache, 3.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2123 959169 Intel® Xeon® W-2123 Processor (8.25M Cache, 3.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2140B 959170 Intel® Xeon® W-2140B Processor (11M Cache, 3.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2133 959171 Intel® Xeon® W-2133 Processor (8.25M Cache, 3.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2125 959172 Intel® Xeon® W-2125 Processor (8.25M Cache, 4.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2135 959173 Intel® Xeon® W-2135 Processor (8.25M Cache, 3.70 GHz) FC-LGA14B, Tray CDX-0003C.00015
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2145 959175 Intel® Xeon® W-2145 Processor (11M Cache, 3.70 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2155 959176 Intel® Xeon® W-2155 Processor (13.75M Cache, 3.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2150B 959177 Intel® Xeon® W-2150B Processor (13.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8171M 959466 Intel® Xeon® Platinum 8171M Processor (35.75M Cache, 2.60 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8151 959467 Intel® Xeon® Platinum 8151 Processor (24.75M Cache, 3.40 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6133 959468 Intel® Xeon® Gold 6133 Processor (27.5M Cache, 2.50 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6137 959470 Intel® Xeon® Gold 6137 Processor (24.75M Cache, 3.90 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6143 959474 Intel® Xeon® Gold 6143 Processor (22M Cache, 2.80 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8165 959475 Intel® Xeon® Platinum 8165 Processor (33M Cache, 2.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6146 959503 Intel® Xeon® Gold 6146 Processor (24.75M Cache, 3.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6144 959504 Intel® Xeon® Gold 6144 Processor (24.75M Cache, 3.50 GHz) FC-LGA14B, Tray 1273 14nm DENVERTON INTEL(R) ATOM(TM) C3314 959594 EMB [DENVERTON] Processor C3314 1.20 GHz, 4M Cache, FC-BGA15Z, T&R, 9W, HW8076502693601 1273 14nm DENVERTON INTEL(R) ATOM(TM) C3324 959595 EMB [DENVERTON] Processor C3324 1.70 GHz, 4M Cache, FC-BGA15Z, T&R, 10W, HW8076502693701 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8176F 959636 Intel® Xeon® Platinum 8176F Processor (38.5M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5120 959684 Boxed Intel® Xeon® Gold 5120 Processor (19.25M Cache, 2.20 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4116 959685 Boxed Intel® Xeon® Silver 4116 Processor (16.5M Cache, 2.10 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4114T 959707 Intel® Xeon® Silver 4114T Processor (13.75M Cache, 2.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) BRONZE 3106 959761 Boxed Intel® Xeon® Bronze 3106 Processor (11M Cache, 1.70 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) BRONZE 3104 959762 Boxed Intel® Xeon® Bronze 3104 Processor (8.25M Cache, 1.70 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4110 959763 Boxed Intel® Xeon® Silver 4110 Processor (11M Cache, 2.10 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4108 959764 Boxed Intel® Xeon® Silver 4108 Processor (11M Cache, 1.80 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4114 959765 Boxed Intel® Xeon® Silver 4114 Processor (13.75M Cache, 2.20 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4112 959766 Boxed Intel® Xeon® Silver 4112 Processor (8.25M Cache, 2.60 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6128 959767 Boxed Intel® Xeon® Gold 6128 Processor (19.25M Cache, 3.40 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 5119T 959780 Intel® Xeon® Gold 5119T Processor (19.25M Cache, 1.90 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6127M 959783 Intel® Xeon® Gold 6127M Processor (22M Cache, 2.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4116T 959790 Intel® Xeon® Silver 4116T Processor (16.5M cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7900X 959986 Boxed Intel® Core™ i9-7900X X-series Processor (13.75M Cache, up to 4.30 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7800X 959987 Boxed Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7820X 959988 Boxed Intel® Core™ i7-7820X X-series Processor (11M Cache, up to 4.30 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7900X 959989 Boxed Intel® Core™ i9-7900X X-series Processor (13.75M Cache, up to 4.30 GHz) FC-LGA14B, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7800X 959991 Boxed Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7820X 959993 Boxed Intel® Core™ i7-7820X X-series Processor (11M Cache, up to 4.30 GHz) FC-LGA14B, for China 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960006 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8350K 960011 Intel® Core™ i3-8350K Processor (8M Cache, 4.00 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 960019 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7920X 960064 Intel® Core™ i9-7920X X-series Processor (16.5M Cache, up to 4.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7800X 960065 Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700K 960617 Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600K 960620 Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, Tray 1272 14nm STRIKE RIDGE INTEL(R) XEON PHI(TM) 960869 SRV [STRIKE RIDGE] Processor 2.20 GHz, 2M Cache, FC-LGA14B, Tray, 300W, HJ8069303810101 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8350K 961059 Boxed Intel® Core™ i3-8350K Processor (8M Cache, 4.00 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 961060 Boxed Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8350K 961083 Boxed Intel® Core™ i3-8350K Processor (8M Cache, 4.00 GHz) FC-LGA14C, for China 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 961084 Boxed Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8706G 961153 Intel® Core™ i7-8706G Processor with Radeon™ RX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8705G 961154 Intel® Core™ i7-8705G Processor with Radeon™ RX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8305G 961161 Intel® Core™ i5-8305G Processor with Radeon™ RX Vega M GL graphics (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8709G 961162 Intel® Core™ i7-8709G Processor with Radeon™ RX Vega M GH graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray CDX-0003C.00016
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7920X 961170 Boxed Intel® Core™ i9-7920X X-series Processor (16.5M Cache, up to 4.30 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7920X 961171 Boxed Intel® Core™ i9-7920X X-series Processor (16.5M Cache, up to 4.30 GHz) FC-LGA14B, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7940X 961191 Intel® Core™ i9-7940X X-series Processor (19.25M Cache, up to 4.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7960X 961201 Intel® Core™ i9-7960X X-series Processor (22M Cache, up to 4.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7980XE 961202 Intel® Core™ i9-7980XE Extreme Edition Processor (24.75M Cache, up to 4.20 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2191B 961299 Intel® Xeon® W-2191B Processor (24.75M Cache, 2.30 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2195 961300 Intel® Xeon® W-2195 Processor (24.75M Cache, 2.30 GHz) FC-LGA14B, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700K 961566 Boxed Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 961567 Boxed Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 961568 Boxed Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600K 961570 Boxed Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700K 961573 Boxed Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, for China 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 961574 Boxed Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, for China 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 961575 Boxed Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, for China 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600K 961576 Boxed Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, for China 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER J5005 961642 Intel® Pentium® Silver J5005 Processor (4M Cache, up to 2.80 GHz) FC-BGA15F, Tray 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) J4105 961643 Intel® Celeron® J4105 Processor (4M Cache, up to 2.50 GHz) FC-BGA15F, Tray 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) J4005 961644 Intel® Celeron® J4005 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2123 961844 Boxed Intel® Xeon™ W-2123 Processor (8.25M Cache, 3.60 GHz) FC-LGA14B 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 961968 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7800X 962010 Boxed Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-7800X 962011 Boxed Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B, for China 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6144 962201 Intel® Xeon® Gold 6144 Processor (24.75M Cache, 3.50 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2135 962353 Boxed Intel® Xeon™ W-2135 Processor (8.25M Cache, 3.70 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7940X 962501 Boxed Intel® Core™ i9-7940X Processor (19.25M Cache, up to 4.30 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7960X 962502 Boxed Intel® Core™ i9-7960X Processor (22M Cache, up to 4.20 GHz) FC-LGA14B 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7940X 962506 Boxed Intel® Core™ i9-7940X Processor (19.25M Cache, up to 4.30 GHz) FC-LGA14B, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7960X 962507 Boxed Intel® Core™ i9-7960X Processor (22M Cache, up to 4.20 GHz) FC-LGA14B, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7980XE 962508 Boxed Intel® Core™ i9-7980XE Extreme Edition Processor (24.75M Cache, up to 4.20 GHz) FC-LGA14B, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-7980XE 962509 Boxed Intel® Core™ i9-7980XE Extreme Edition Processor (24.75M Cache, up to 4.20 GHz) FC-LGA14B 1273 14nm DENVERTON INTEL(R) ATOM(TM) C3754 962679 Intel® Atom™ Processor C3754 (16M Cache, 1.70 GHz) FC-BGA15Z, Tray 1272 14nm KNIGHTS MILL INTEL(R) XEON PHI(TM) 7295 962788 Intel® Xeon Phi™ Processor 7295 (16GB, 1.5 GHz, 72 Core) FC-LGA14B, Tray 1272 14nm KNIGHTS MILL INTEL(R) XEON PHI(TM) 7285 962808 Intel® Xeon Phi™ Processor 7285 (16GB, 1.3 GHz, 68 Core) FC-LGA14B, Tray 1272 14nm KNIGHTS MILL INTEL(R) XEON PHI(TM) 7235 962809 Intel® Xeon Phi™ Processor 7235 (16GB, 1.3 GHz, 64 Core) FC-LGA14B, Tray 1272 14nm KNIGHTS MILL INTEL(R) XEON PHI(TM) 7255 962810 Intel® Xeon Phi™ Processor 7255 (16GB, 1.1 GHz, 68 Core) FC-LGA14B, Tray 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5400 962838 Intel® Pentium® Gold G5400 Processor (4M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 962883 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4123 963002 Intel® Xeon® Silver 4123 Processor (11M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm COFFEE LAKE N/A I5-8300H 963136 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2175 963212 Intel® Xeon™ W-2175 Processor (19.25M Cache, 2.50 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) W-2170B 963214 Intel® Xeon® Processor W-2170B (19.25M Cache, 2.50 GHz) FC-LGA14B, Tray 1272 14nm COFFEE LAKE INTEL(R) CELERON(R) G4900 963375 Intel® Celeron® Processor G4900 (2M Cache, 3.10 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2124G 963428 Intel® Xeon® E-2124G Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2144G 963429 Intel® Xeon® E-2144G Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2174G 963430 Intel® Xeon® E-2174G Processor (8M Cache, up to 4.70 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2134 963443 Intel® Xeon® E-2134 Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2124 963447 Intel® Xeon® E-2124 Processor (8M Cache, up to 4.30 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2186G 963448 Intel® Xeon® E-2186G Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray CDX-0003C.00017
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2176G 963450 Intel® Xeon® E-2176G Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2146G 963454 Intel® Xeon® E-2146G Processor (12M Cache, up to 4.50 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2126G 963464 Intel® Xeon® E-2126G Processor (12M Cache, up to 4.50 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2104G 963465 Intel® Xeon® Processor E-2104G (8M Cache, 3.20 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2136 963466 Intel® Xeon® E-2136 Processor (12M Cache, up to 4.50 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700T 963506 Intel® Core™ i7-8700T Processor (12M Cache, up to 4.00 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600 963534 Intel® Core™ i5-8600 Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600T 963537 Intel® Core™ i5-8600T Processor (9M Cache, up to 3.70 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400T 963540 Intel® Core™ i5-8400T Processor (9M Cache, up to 3.30 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5400 963543 Intel® Pentium® Gold G5400 Processor (4M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5400T 963566 Intel® Pentium® Gold G5400T Processor (4M Cache, 3.10 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500T 963592 Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8300 963643 Intel® Core™ i3-8300 Processor (8M Cache, 3.70 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8300T 963646 Intel® Core™ i3-8300T Processor (8M Cache, 3.20 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100T 963660 Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5600 963663 Intel® Pentium® Gold G5600 Processor (4M Cache, 3.90 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5500 963670 Intel® Pentium® Gold G5500 Processor (4M Cache, 3.80 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5500T 963678 Intel® Pentium® Gold G5500T Processor (4M Cache, 3.20 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CELERON(R) G4920 963694 Intel® Celeron® Processor G4920 (2M Cache, 3.20 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R) CELERON(R) G4900T 963697 Intel® Celeron® Processor G4900T (2M Cache, 2.90 GHz) FC-LGA14C, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON® E-2176M 963717 Intel® Xeon® E-2176M Processor (12M Cache, up to 4.40 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8850H 963719 Intel® Core™ i7-8850H Processor (9M Cache, up to 4.30 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400H 963721 Intel® Core™ i5-8400H Processor (8M Cache, up to 4.20 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8174 963757 Intel® Xeon® Platinum 8174 Processor (33M Cache, 3.10 GHz) FC-LGA14B, Tray 1272 14nm COFFEE LAKE INTEL(R) CELERON(R) G4900 963823 Boxed Intel® Celeron® Processor G4900 (2M Cache, 3.10 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R) CELERON(R) G4900 963825 Boxed Intel® Celeron® Processor G4900 (2M Cache, 3.10 GHz) FC-LGA14C, for China 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2187NT 964082 Intel® Xeon® D-2187NT Processor (22M Cache, 2.00 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2161I 964083 Intel® Xeon® D-2161I Processor (16.5M Cache, 2.20 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2163IT 964084 Intel® Xeon® D-2163IT Processor (16.5M Cache, 2.10 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2183IT 964085 Intel® Xeon® D-2183IT Processor (22M Cache, 2.20 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2146NT 964087 Intel® Xeon® D-2146NT Processor (11M Cache, 2.30 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2173IT 964088 Intel® Xeon® D-2173IT€Processor (19.25M Cache, 1.70 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2145NT 964089 Intel® Xeon® D-2145NT Processor (11M Cache, 1.90 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2143IT 964090 Intel® Xeon® D-2143IT Processor (11M Cache, 2.20 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2141I 964091 Intel® Xeon® D-2141I Processor (11M Cache, 2.20 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2123IT 964092 Intel® Xeon® D-2123IT Processor (8.25M Cache, 2.20 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2166NT 964093 Intel® Xeon® D-2166NT Processor (16.5M Cache, 2.00 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2177NT 964094 Intel® Xeon® D-2177NT Processor (19.25M Cache, 1.90 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2142IT 964095 Intel® Xeon® D-2142IT Processor (11M Cache, 1.90 GHz) FC-BGA14B, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2191 964672 Intel® Xeon® D-2191 Processor (24.75M Cache, 1.60 GHz) FC-BGA14B, Tray 1272 14nm COFFEE LAKE INTEL(R) CELERON(R) G4920 973459 Boxed Intel® Celeron® Processor G4920 (2M Cache, 3.20 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2176G 973773 Boxed Intel® Xeon® E-2176G Processor (12M Cache, 3.70 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2146G 974864 Boxed Intel® Xeon® E-2146G Processor (12M Cache, 3.50 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2191 974910 Intel® Xeon® D-2191 Processor (24.75M Cache, 1.60 GHz) FC-BGA14B, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8559U 974938 Intel® Core™ i7-8559U Processor (8M Cache, up to 4.50 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8269U 974943 Intel® Core™ i5-8269U Processor (6M Cache, up to 4.20 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600 974956 Boxed Intel® Core™ i5-8600 Processor (9M Cache, up to 4.30 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 974957 Boxed Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8300 974959 Boxed Intel® Core™ i3-8300 Processor (8M Cache, 3.70 GHz) FC-LGA14C CDX-0003C.00018
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5600 974960 Boxed Intel® Pentium® Gold G5600 Processor (4M Cache, 3.90 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5500 974961 Boxed Intel® Pentium® Gold G5500 Processor (4M Cache, 3.80 GHz) FC-LGA14C 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 6162 974994 Intel® Xeon® Platinum 6162 Processor (33M Cache, 1.90 GHz) FC-LGA14B, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 6122 974995 Intel® Xeon® Gold 6122 Processor (27.5M Cache, 1.80 GHz) FC-LGA14B, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 I9-8950HK 975241 Intel® Core™ i9-8950HK Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2186M 975245 Intel® Xeon® E-2186M Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8109U 975758 Intel® Core™ i3-8109U Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8259U 975759 Intel® Core™ i5-8259U Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600 975870 Boxed Intel® Core™ i5-8600 Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, for China 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 975871 Boxed Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, for China 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5500 975872 Boxed Intel® Pentium® Gold G5500 Processor (4M Cache, 3.80 GHz) FC-LGA14C, for China 1274 10nm CANNON LAKE INTEL (R) CORE (TM) I3 I3-8121U 975938 Intel® Core™ i3-8121U Processor (4M Cache, up to 3.20 GHz) FC-BGA16F, Tray 1272 14nm SKYLAKE INTEL(R)XEON(R) D-2191A 976094 Intel® Xeon® D-2191A Processor (24.75M Cache, 1.60 GHz) FC-BGA14B, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8700B 976523 Intel® Core™ i7-8700B Processor (12M Cache, up to 4.60 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500B 976526 Intel® Core™ i5-8500B Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400B 976531 Intel® Core™ i5-8400B Processor (9M Cache, up to 4.00 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5400 976952 Boxed Intel® Pentium® Gold G5400 Processor (4M Cache, 3.70 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD G5400 976953 Boxed Intel® Pentium® Gold G5400 Processor (4M Cache, 3.70 GHz) FC-LGA14C, for China 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2124G 977233 Boxed Intel® Xeon® E-2124G Processor (8M Cache, 3.40 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL(R)XEON(R) E-2134 977235 Boxed Intel® Xeon® E-2134 Processor (8M Cache, 3.50 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 977399 Boxed Intel® Core™ i7+8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, includes Intel® Optane™ Memory (16GB) 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 977518 Boxed Intel® Core™ i5+8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, includes Intel® Optane™ Memory (16GB) 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 977519 Boxed Intel® Core™ i5+8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, includes Intel® Optane™ Memory (16GB) 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8706G 978295 Intel® Core™ i7-8706G Processor with Radeon™ Pro WX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8086K 978581 Boxed Intel® Core™ i7-8086K Processor (12M Cache, up to 5.00 GHz) FC-LGA14C 1273 14nm DENVERTON INTEL(R) ATOM(TM) C3534 978654 [Missing External Name] FH82CM248 1273 14nm DENVERTON INTEL (R) PROCESSOR C3336 979019 Intel Atom® Processor C3336 (4M Cache, 1.50 GHz) FC-BGA15C, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8086K 979349 Boxed Intel® Core™ i7-8086K Processor (12M Cache, up to 5.00 GHz) FC-LGA14C, for China 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8305G 979456 Intel® Core™ i5-8305G Processor with Radeon™ Pro WX Vega M GL graphics (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE MONTAGE(R) JINTIDE(R) C C2460 1 980100 Montage® Jintide® C C2460 1 Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm WHISKEY LAKE N/A I3-8145U 980657 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 8124M 980660 Intel® Xeon® Platinum 8124M Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8500Y 980666 Intel® Core™ i7-8500Y Processor (4M Cache, up to 4.20 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8200Y 980667 Intel® Core™ i5-8200Y Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) M M3-8100Y 980672 Intel® Core™ m3-8100Y Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm KABY LAKE INTEL (R) CORE (TM) M M3-8100Y 980678 Intel® Core™ m3-8100Y Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I3 I3-8100B 981451 Intel® Core™ i3-8100B Processor (4M Cache, 3.60 GHz) FC-BGA14F, Tray 1272 14nm WHISKEY LAKE N/A I7-8565U 982918 Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm WHISKEY LAKE N/A I5-8265U 982922 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm SKY MEADOW INTEL(R)XEON® N/A 982924 SRV [SKY MEADOW] Processor 2.00 GHz, 33M Cache, FC-LGA14B, Tray, 205W, CM8067303405604 1272 14nm SKY MEADOW INTEL(R)XEON(R) N/A 982925 SRV [SKY MEADOW] Processor 2.10 GHz, 22M Cache, FC-LGA14B, Tray, 180W, CM8067303409003 1272 14nm CASCADE LAKE INTEL(R) XEON(R) GOLD 6267 982945 1272 14nm CASCADE LAKE INTEL(R) XEON(R) PLATINUM 8263C 982995 1272 14nm CASCADE LAKE INTEL(R) XEON(R) GOLD 6261 982997 1273 14nm APOLLO LAKE INTEL(R) ATOM(TM) A3920 983175 Intel Atom® Processor A3920 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray 1272 14nm AMBER LAKE INTEL (R) CORE (TM) I7 I7-8510Y 983287 Intel® Core™ i7-8510Y Processor (4M Cache, up to 4.30 GHz) FC-BGA14F, Tray 1272 14nm AMBER LAKE INTEL(R) CORE(TM) I5 I5-8310Y 983288 Intel® Core™ i5-8310Y Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray 1272 14nm AMBER LAKE INTEL(R) CORE(TM) I5 I5-8210Y 983289 Intel® Core™ i5-8210Y Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 I9-9900K 983354 Intel® Core™ i9-9900K Processor (16M Cache, up to 5.00 GHz) FC-LGA14A, Tray 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-9700K 983355 Intel® Core™ i7-9700K Processor (12M Cache, up to 4.90 GHz) FC-LGA14A, Tray CDX-0003C.00019
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-9600K 983356 Intel® Core™ i5-9600K Processor (9M Cache, up to 4.60 GHz) FC-LGA14A, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 I9-9900K 984503 Boxed Intel® Core™ i9-9900K Processor (16M Cache, up to 5.00 GHz) FC-LGA14A 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-9600K 984505 Boxed Intel® Core™ i5-9600K Processor (9M Cache, up to 4.60 GHz) FC-LGA14C 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-9700K 984509 Boxed Intel® Core™ i7-9700K Processor (12M Cache, up to 4.90 GHz) FC-LGA14A, for China 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-9600K 984512 Boxed Intel® Core™ i5-9600K Processor (9M Cache, up to 4.60 GHz) FC-LGA14A, for China 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) 4417U 984527 Intel® Pentium® Processor 4417U (2M Cache, 2.30 GHz) FC-BGA14F, Tray 1272 14nm WHISKEY LAKE INTEL(R) PENTIUM(R) 5405U 984529 Intel® Pentium® Gold 5405U Processor (2M Cache, 2.30 GHz) FC-BGA14F, Tray 1272 14nm WHISKEY LAKE INTEL(R) CELERON(R) 4205U 984533 Intel® Celeron® Processor 4205U (2M Cache, 1.80 GHz) FC-BGA14F, Tray 1272 14nm COFFEE LAKE INTEL(R) CORE EVO(TM) I7 I7-9700K 985083 Boxed Intel® Core™ i7-9700K Processor (12M Cache, up to 4.90 GHz) FC-LGA14A 1272 14nm BROADWELL INTEL(R)XEON(R) D-1573N 985835 Intel® Xeon® Processor D-1573N (12M Cache, 2.70 GHz) FC-BGA14C, Tray 1272 14nm BROADWELL INTEL(R)XEON(R) D-1563N 985836 Intel® Xeon® Processor D-1563N (12M Cache, 2.00 GHz) FC-BGA14C, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9980XE 986447 Intel® Core™ i9-9980XE Extreme Edition Processor (24.75M Cache, up to 4.50 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9960X 986448 Intel® Core™ i9-9960X X-series Processor (22M Cache, up to 4.50 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9940X 986449 Intel® Core™ i9-9940X X-series Processor (19.25M Cache, up to 4.50 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9920X 986450 Intel® Core™ i9-9920X X-series Processor (19.25M Cache, up to 4.50 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9900X 986451 Intel® Core™ i9-9900X X-series Processor (19.25M Cache, up to 4.50 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9820X 986452 Intel® Core™ i9-9820X X-series Processor (16.5M Cache, up to 4.20 GHz) FC-LGA14A, Tray 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-9800X 986453 Intel® Core™ i7-9800X X-series Processor (16.5M Cache, up to 4.50 GHz) FC-LGA14A, Tray 1272 14nm CASCADE LAKE INTEL(R) XEON(R) GOLD 6230 999C00 1272 14nm CASCADE LAKE INTEL(R) XEON(R) GOLD 6248 999C09 1272 14nm CASCADE LAKE INTEL(R) XEON(R) PLATINUM 8280L 999C16 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 I9-9900K 999AGF Boxed Intel® Core™ i9-9900K Processor (16M Cache, up to 5.00 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-9800X 999AC3 Boxed Intel® Core™ i7-9800X X-series Processor (16.5M Cache, up to 4.40 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-9800X 999ACM Boxed Intel® Core™ i7-9800X X-series Processor (16.5M Cache, up to 4.40 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9820X 999AC8 Boxed Intel® Core™ i9-9820X X-series Processor (16.5M Cache, up to 4.10 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9820X 999ACL Boxed Intel® Core™ i9-9820X X-series Processor (16.5M Cache, up to 4.10 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9900X 999AC5 Boxed Intel® Core™ i9-9900X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9900X 999ACK Boxed Intel® Core™ i9-9900X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9920X 999AC6 Boxed Intel® Core™ i9-9920X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9920X 999ACJ Boxed Intel® Core™ i9-9920X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9940X 999AC9 Boxed Intel® Core™ i9-9940X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9940X 999ACG Boxed Intel® Core™ i9-9940X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9960X 999AC7 Boxed Intel® Core™ i9-9960X X-series Processor (22M Cache, up to 4.40 GHz) FC-LGA14A 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9960X 999ACF Boxed Intel® Core™ i9-9960X X-series Processor (22M Cache, up to 4.40 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9980XE 999ACD Boxed Intel® Core™ i9-9980XE Processor Extreme Edition (24.75M Cache, up to 4.40 GHz) FC-LGA14A, for China 1272 14nm SKYLAKE INTEL(R) CORE(TM) I9 I9-9980XE 999AD1 Boxed Intel® Core™ i9-9980XE Processor Extreme Edition (24.75M Cache, up to 4.40 GHz) FC-LGA14A 1273 14nm LEWISBURG INTEL(R) C621 949752 Intel® EY82C621 Platform Controller Hub 1273 14nm LEWISBURG N/A 951425 Intel® EY82C621 Platform Controller Hub 1273 14nm LEWISBURG N/A 951591 [Missing External Name] EY82075PCH 1273 14nm LEWISBURG INTEL(R) C628 953061 Intel ® C628 chipset (Intel ® EY82C628 PCH) 1273 14nm LEWISBURG INTEL(R) C627 953062 Intel ® C627 chipset (Intel ® EY82C627 PCH) 1273 14nm LEWISBURG INTEL(R) C621 953098 Intel® EY82C621 Platform Controller Hub 1273 14nm LEWISBURG INTEL(R) C621 953999 Intel® EY82C621 Platform Controller Hub 1273 14nm LEWISBURG INTEL(R) C621 954858 Intel® EY82C621 Platform Controller Hub 1273 14nm LEWISBURG INTEL(R) C628 954859 Intel ® C628 chipset (Intel ® EY82C628 PCH) 1273 14nm LEWISBURG INTEL(R) C627 954860 Intel ® C627 chipset (Intel ® EY82C627 PCH) 1273 14nm LEWISBURG INTEL(R) C626 954861 Intel ® C626 chipset (Intel ® EY82C626 PCH) 1273 14nm LEWISBURG INTEL(R) C625 954862 Intel ® C625 chipset (Intel ® EY82C625 PCH) 1273 14nm LEWISBURG INTEL(R) C622 954863 Intel ® C622 chipset (Intel ® EY82C622 PCH) 1273 14nm LEWISBURG INTEL(R) C624 954864 Intel ® C624 chipset (Intel ® EY82C624 PCH) 1273 14nm LEWISBURG INTEL(R) C621 957625 Intel® EY82C621 Platform Controller Hub 1273 14nm LEWISBURG INTEL(R) C628 957626 Intel ® C628 chipset (Intel ® EY82C628 PCH) CDX-0003C.00020
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1273 14nm LEWISBURG INTEL(R) C627 957627 Intel ® C627 chipset (Intel ® EY82C627 PCH) 1273 14nm LEWISBURG INTEL(R) C626 957628 Intel ® C626 chipset (Intel ® EY82C626 PCH) 1273 14nm LEWISBURG INTEL(R) C625 957629 Intel ® C625 chipset (Intel ® EY82C625 PCH) 1273 14nm LEWISBURG INTEL(R) C622 957630 Intel ® C622 chipset (Intel ® EY82C622 PCH) 1273 14nm LEWISBURG INTEL(R) C621 957631 Intel® EY82C621 Platform Controller Hub 1273 14nm LEWISBURG INTEL(R) C624 957632 Intel ® C624 chipset (Intel ® EY82C624 PCH) 1273 14nm CANNON LAKE N/A 964246 Intel® FH82Q370 Platform Controller Hub 1273 14nm CANNON LAKE N/A 964247 Intel® FH82H370 Platform Controller Hub 1273 14nm CANNON LAKE N/A 964256 [Missing External Name] FH82Z390 1273 14nm CANNON LAKE N/A 964265 Intel® FH82B360 Platform Controller Hub 1273 14nm CANNON LAKE N/A 964267 [Missing External Name] FH82H310 1273 14nm CANNON LAKE N/A 964268 Intel® FH82C246 Platform Controller Hub 1273 14nm CANNON LAKE N/A 964269 Intel® FH82HM370 Platform Controller Hub 1273 14nm CANNON LAKE N/A 964270 Intel® FH82C242 Platform Controller Hub 1273 14nm CANNON LAKE N/A 964271 Intel® FH82QM370 Platform Controller Hub 1273 14nm CANNON LAKE N/A 964272 Intel® FH82CM246 Platform Controller Hub 1273 14nm CANNON LAKE N/A 964273 Intel® FH82QMS380 Platform Controller Hub 1273 14nm CANNON LAKE N/A 978829 Intel® FH82H310 Platform Controller Hub 1275 10nm SHUTTLE CREEK N/A 951940 [Missing External Name] LUZONTC1 1273 14nm CHERRY TRAIL INTEL (R) PROCESSOR N/A 936018 CE [CHERRY TRAIL] Processor ULV 1.60 GHz, 2M Cache, FC-MB6T, Tray, N/AW, GB8066401885800 1273 14nm CHERRY TRAIL GENUINE INTEL (R) CPU Z8700 940953 Intel Atom® x7-Z8700 Processor (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8500 940954 Intel Atom® x5-Z8500 Processor (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3150 942230 Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3050 942232 Intel® Celeron® Processor N3050 (2M Cache, up to 2.16 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) PENTIUM(R) N3700 942599 Intel® Pentium® Processor N3700 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3150 942600 Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3050 942602 Intel® Celeron® Processor N3050 (2M Cache, up to 2.16 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3000 942603 Intel® Celeron® Processor N3000 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray 1273 14nm CHERRY TRAIL GENUINE INTEL (R) CPU Z8700 943102 Intel Atom® x7-Z8700 Processor (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8300 943165 Intel Atom® x5-Z8300 Processor (2M Cache, up to 1.84 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) PENTIUM(R) N3700 943327 Intel® Pentium® Processor N3700 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3150 943328 Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3050 943329 Intel® Celeron® Processor N3050 (2M Cache, up to 2.16 GHz) FC-BGA15F, Tray 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8100P 944058 Intel Atom® x5-Z8100P Processor (2M Cache, up to 1.04 GHz) FC-MB6T, T&R 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 944573 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8500 944708 Intel Atom® x5-Z8500 Processor (2M Cache, up to 2.24 GHz) FC-BGA15F, T&R 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 944993 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) J3060 944995 Intel® Celeron® Processor J3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray 1273 14nm CHERRY TRAIL GENUINE INTEL (R) CPU Z8750 945048 Intel Atom® x7-Z8750 Processor (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 946849 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm CHERRY TRAIL GENUINE INTEL (R) CPU Z8750 947016 Intel Atom® x7-Z8750 Processor (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8550 947017 Intel Atom® x5-Z8550 Processor (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) PENTIUM(R) N3710 947020 Intel® Pentium® Processor N3710 (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3010 947021 Intel® Celeron® Processor N3010 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) PENTIUM(R) J3710 947024 Intel® Pentium® Processor J3710 (2M Cache, up to 2.64 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) J3060 947025 Intel® Celeron® Processor J3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) CELERON(R) J3160 947026 Intel® Celeron® Processor J3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8350 947027 Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8330 947028 Intel Atom® x5-Z8330 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray 1273 14nm BRASWELL INTEL(R) ATOM(TM) E8000 947286 Intel Atom® x5-E8000 Processor (2M Cache, up to 2.00 GHz) FC-BGA15F, Tray CDX-0003C.00021
PROCESS CODE PROCESS NODE ARCHITECTURE BRAND PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME INTEL 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8550 947827 Intel Atom® Processor Z8550 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 947911 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 948716 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 949226 Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service) 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 949336 Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 949870 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 949871 Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service) 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 949874 Intel® Puma™ 7 SoC CE2712M DOCSIS3.1 Entry Level Networking GW with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 950572 Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 951881 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952283 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952322 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952331 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952346 Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service) 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952347 Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952348 Intel® Puma™ 7 SoC CE2712M DOCSIS3.1 Entry Level Networking GW with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952485 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952487 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952488 Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952489 Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service) 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952492 Intel® Puma™ 7 SoC CE2712M DOCSIS3.1 Entry Level Networking GW with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952555 Intel® Puma™ 7 SoC CE2703i DOCSIS3.1 Modem/eMTA (5Gbps service) industrial 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 952561 Intel® Puma™ 7 SoC CE2753 DOCSIS3.1 Enterprise Services industrial 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961654 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961655 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961656 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961657 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961659 Intel® Puma™ 7 SoC CE2712M DOCSIS3.1 Entry Level Networking GW with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961661 Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961663 Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service) 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961667 Intel® Puma™ 7 SoC CE2703i DOCSIS3.1 Modem/eMTA (5Gbps service) industrial 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961668 Intel® Puma™ 7 SoC CE2753 DOCSIS3.1 Enterprise Services industrial 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 961669 Intel® Puma™ 7 SoC CE2753 DOCSIS3.1 Enterprise Services industrial 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 962685 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 963196 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 975635 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 975636 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 975639 Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service) 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 975641 Intel® Puma™ 7 SoC CE2703i DOCSIS3.1 Modem/eMTA (5Gbps service) industrial 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 975642 Intel® Puma™ 7 SoC CE2753 DOCSIS3.1 Enterprise Services industrial 1273 14nm COUGAR MOUNTAIN INTEL(R) PUMA(TM) 975644 Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway CDX-0003C.00022
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME NX.GTMAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GTMAA.002 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NT.LEPAA.001 CI78550U WINDOWS TABLET-NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q1TAA.001 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GNZAA.002 CM3855U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CELERON(R) 3855U 944335 Intel® Celeron® Processor 3855U (2M Cache, 1.60 GHz) FC-BGA14C, Tray NX.GC2AA.016 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GVFAA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GP2AA.003 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NT.LCWAA.002 ATMZ8350 WINDOWS TABLET-NB 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8350 947027 Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray NX.GC2AA.017 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GC2AA.010 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GP7AA.002 CI57200U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 951957 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GG5AA.005 CI37100U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 951959 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray NX.GRMAA.005 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.G54AA.018 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NT.LCQAA.004 ATMZ8350 WINDOWS TABLET-NB 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8350 947027 Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray NX.GHJAA.009 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GHJAA.007 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GC2AA.007 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GHJAA.002 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GTSAA.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GF4AA.004 CI36006U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray NX.GP4AA.003 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GTQAA.001 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.G54AA.002 ICQN3150 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3150 942600 Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray NX.GR7AA.007 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VDCAA.016 CI36100U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100U 944334 Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray NX.GSFAA.001 CI58250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GNTAA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.G4XAA.001 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GNTAA.010 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GMWAA.004 7Y75 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 951956 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray N9.VHKWW.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GRMAA.008 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NT.LCQAA.005 ATMZ8350 WINDOWS TABLET-NB 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8350 947027 Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray NX.GP6AA.004 CI36100U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100U 944334 Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray NX.GP6AA.003 CI56200U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray NX.GM8AA.001 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GPZAA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GSUAA.001 CI36006U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray NX.G4XAA.002 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GNPAA.021 CI36006U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray NX.GS6AA.001 CI36006U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray NX.GS5AA.001 CI36006U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray NX.GNPAA.022 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GS6AA.002 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GS5AA.002 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GHJAA.008 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GRMAA.002 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GRMAA.006 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.GTPAA.003 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GSYAA.001 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GR5AA.002 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NH.Q29AA.003 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GFTAA.011 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GR7AA.001 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray N9.GV2WW.002 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray N9.GVFWW.001 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray N9.GV3WW.002 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.GVJAA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.VG0AA.001 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NH.Q2LAA.001 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GT0AA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GN2AL.006 7Y54 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7Y54 951960 Intel® Core™ i5-7Y54 Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray NX.GHJAA.006 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GR7AL.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GUWAA.004 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GQJAA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray ACER CDX-0004C.0001 CDX-0004C
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER N9.GWGWW.005 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray N9.GWGWW.007 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.VCYAA.001 CI56300U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6300U 944340 Intel® Core™ i5-6300U Processor (3M Cache, up to 3.00 GHz) FC-BGA14C, Tray NX.GQGAA.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q2YAA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.EFJWW.004 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GULAA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NH.Q2QAA.006 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GNPAA.001 CI37100U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 953354 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray NX.GS1AA.001 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NH.Q2BAA.003 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NH.Q29AA.002 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GL2AA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GM9AA.001 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NT.LDRAA.003 PQCN4200 WINDOWS TABLET-NB 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.G55AA.005 ICQN3150 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3150 942600 Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray NX.GP6AA.001 CM3855U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CELERON(R) 3855U 944335 Intel® Celeron® Processor 3855U (2M Cache, 1.60 GHz) FC-BGA14C, Tray N9.EFJWW.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H0SWW.003 CM3865U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3865U 953360 Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray NX.GP4AA.012 CI36006U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray NX.GC7AA.001 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GTPAA.008 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GNUAL.013 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NT.LCDAL.010 CI36100U WINDOWS TABLET-NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100U 944334 Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray NX.GS5AL.013 CI37100U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 953354 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray NX.GFSAL.004 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GNSAL.008 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NH.Q2BAL.007 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GWHAL.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GT1AL.001 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q2RAL.023 CI57300HQ NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray NH.Q2RAL.014 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NH.Q29AL.009 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GC2AA.009 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GHJAA.004 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.VDKAA.009 CI56200U Notebook 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray NX.GC2AA.013 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NH.Q2RAA.013 CI57300HQ Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray NX.GR7AA.006 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GTCAA.012 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GSXAA.004 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GQGAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GL2AA.003 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GPTAA.004 ICQN3450 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.GQJAA.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GP8AA.005 CI57300HQ Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray NX.GH4AA.003 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.GTCAA.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GSXAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GTCAA.003 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.G4XAA.004 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GTCAA.006 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GSXAA.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GR7AA.004 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GR5AA.005 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.G4XAA.003 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GP1AA.001 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.GM8AA.004 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NT.GDQAA.006 CI36100U Windows Tablet -NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100U 944334 Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray N9.GY0WW.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q1ZAA.001 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GNTAA.005 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.G55AA.018 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NH.Q2RAA.001 CI57300HQ Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray NX.SHXAA.006 ICQN3450 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray N9.H1WWW.001 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.GUNWW.003 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NH.Q2QAA.015 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray CDX-0004C.0002
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER NH.Q28AA.005 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NT.LDSAA.001 CI57200U/H22 Windows Tablet -NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NH.Q2RAA.016 CI57300HQ Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray N9.GUHWW.001 CI77Y75/H22 Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 953348 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray NX.G55AA.017 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.G55AA.019 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GM8AA.005 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GM9AA.004 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.G54AA.012 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GTMAA.005 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.SHXAA.005 ICQN3450 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.G55AA.006 ICDN3050 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3050 942602 Intel® Celeron® Processor N3050 (2M Cache, up to 2.16 GHz) FC-BGA15F, Tray NX.G54AA.016 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GZRAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GSKAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GTPAA.001 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GSYAA.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q2RAA.002 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GRYAA.001 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.GUHWW.002 CI77Y75/H22 Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 953348 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray N9.GZAWW.002 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GPGAA.002 CI57300HQ Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray NH.Q1EAA.003 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GUKAA.002 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GULAA.002 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NT.LCDAA.003 CI36100U Windows Tablet -NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100U 944334 Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray NX.GUKAA.001 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NH.Q2RAA.014 CI57300HQ Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray N9.VHRWW.001 ICQN4100 Notebook 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GU7AA.001 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GUHAA.001 CI77Y75/H22 Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 953348 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray NX.GR4AL.010 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GP2AA.002 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NH.Q1XAA.003 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray N9.Q3FWW.001 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray N9.H1LWW.003 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NH.Q2YAA.002 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GTPAA.007 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GZRAA.002 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GTPAA.006 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GYAAA.001 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.VD4AA.016 CI56200U Notebook 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray NH.Q2YAA.004 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.G55AA.010 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GXZAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VCGAA.037 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray N9.H8WWW.001 ICQN4100 Notebook 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.EFJAA.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H1WAA.001 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H93WW.002 ICDN4000 Notebook 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray N9.H99WW.001 PQCN5000 Notebook 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray N9.H8VWW.002 ICDN4000 Notebook 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray N9.H91WW.002 ICQN4100 Notebook 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray N9.H98WW.001 CI78500Y Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8500Y 980666 Intel® Core™ i7-8500Y Processor (4M Cache, up to 4.20 GHz) FC-BGA14F, Tray N9.H8YWW.002 PQCN5000 Notebook 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray N9.H99WW.003 PQCN5000 Notebook 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.EFJAA.010 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GH4AA.001 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NT.LCDAA.001 CI56200U Windows Tablet -NB 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray N9.HAWWW.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.HB0WW.002 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.HB3WW.001 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.HAZWW.001 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GY0AA.001 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.VHSAA.002 ICDN4000 Notebook 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray N9.H98WW.002 CI78500Y Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8500Y 980666 Intel® Core™ i7-8500Y Processor (4M Cache, up to 4.20 GHz) FC-BGA14F, Tray NX.GWGAA.001 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray N9.HAWWW.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray CDX-0004C.0003
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER N9.HB0WW.004 PMD4417U Notebook 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) 4417U 984527 Intel® Pentium® Processor 4417U (2M Cache, 2.30 GHz) FC-BGA14F, Tray N9.HDEWW.001 CI58265U Notebook 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NH.Q3DAA.001 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GMBAA.001 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.VHQAA.003 PQCN5000 Notebook 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.VHRAA.001 ICDN4000 Notebook 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NH.Q28AA.006 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.VDKAA.192 CI56200U Notebook 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray N9.H3UWW.002 CI38145U Notebook 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.GYSWW.001 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q1FAA.001 CI77820HK Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7820HK 952955 Intel® Core™ i7-7820HK Processor (8M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.H69WW.001 CI58265U Notebook 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GTCAA.019 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GR7AA.003 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GSXAA.006 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GNPAA.009 CI57200U/H22 Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.VDKAA.186 CI56200U Notebook 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray NX.GR7AA.011 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GSUAL.003 CI77500U/H22 Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 953352 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray NX.GP4AL.015 CI77500U/H22 Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 953352 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray NX.H3UAA.001 CI58265U Notebook 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.H69WW.003 CI78565U Notebook 1272 14nm WHISKEY LAKE N/A I7-8565U 982918 Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray NX.H7QAA.001 CI58265U Notebook 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.VCGAA.015 ICQN3160 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.VCHAA.019 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NH.Q1YAA.002 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray N9.VK8WW.002 CI78565U Notebook 1272 14nm WHISKEY LAKE N/A I7-8565U 982918 Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray N9.VK9WW.002 CI58265U Notebook 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.Q52WW.005 CI78705G Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8705G 961154 Intel® Core™ i7-8705G Processor with Radeon™ RX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3FAA.001 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NT.LCQAA.003 ATMZ8350 Windows Tablet -NB 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8350 947027 Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray NX.GZAAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.HD4WW.001 CI38145U Notebook 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.VK8WW.004 CI78565U Notebook 1272 14nm WHISKEY LAKE N/A I7-8565U 982918 Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray N9.Q52WW.003 CI78705G Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8705G 961154 Intel® Core™ i7-8705G Processor with Radeon™ RX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GP4AA.006 CI57200U/H22 Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GP5AA.004 CI57200U/H22 Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GTBAA.001 CI57200U/H22 Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GR7AA.012 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GR7AA.013 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.GTQAA.002 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray N9.VJZWW.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GZRAA.006 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q3NAA.003 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.VG0AA.004 ICQN3450 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray N9.VJCWW.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H0DAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.VJDWW.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.GXCAA.001 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.GXBAA.003 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GNJAA.002 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray N9.GXNWW.001 CM3965U Notebook 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3965U 953361 Intel® Celeron® Processor 3965U (2M Cache, 2.20 GHz) FC-BGA14F, Tray N9.H09WW.001 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray N9.H0AWW.002 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GZAAA.002 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GTCAA.020 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GNPAA.017 CI37100U/H22 Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 953354 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray NX.GNPAA.013 CI57200U/H22 Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray N9.H0KWW.002 ICQN3450 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray N9.H0KWW.003 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.SHXAA.003 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NH.Q28AA.001 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GHJAA.010 ICDN3060 Notebook 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray N9.EFJWW.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H0SWW.002 CM3865U Notebook 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3865U 953360 Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray NX.GR7AA.008 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q3ZAA.001 CI58300H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q3YAA.001 CI58300H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray CDX-0004C.0004
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER NX.H09AA.001 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GSFAA.003 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GRDAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H1LWW.001 PQCN4200 Notebook 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray N9.H1QWW.002 ICQN3450 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.GVZAA.003 ICDN4000 Notebook 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NH.Q28AL.008 CI77700HQ Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GTQAA.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H0KAA.003 ICQN3450 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.GNPAA.005 CI37100U/H22 Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 953354 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray NX.GVNAL.001 CI57200U/H22 Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GR4AL.008 ICDN3350 Notebook 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GYYAL.002 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.GXBAL.001 CI58300H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray N9.Q3PWW.001 CI98950HK Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 I9-8950HK 975241 Intel® Core™ i9-8950HK Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray N9.VJSWW.001 CI58265U Notebook 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.Q53WW.001 CI58300H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray N9.Q5RWW.001 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GZRAA.008 CI38130U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGGAA.004 CI77500U/H22 Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 953352 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray NH.GXEAA.005 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.H1CAA.001 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GTPAA.012 CI78550U Notebook 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q3ZAA.003 CI58300H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q3YAA.004 CI78750H Notebook 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GS1AA.003 CI57200U/H22 Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.H37AA.002 CI58250U Notebook 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.Q4HWW.001 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray N9.H14WW.002 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GXGAA.002 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.H54AA.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.H87AA.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.VJ7WW.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GZLAA.001 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.GZGAA.001 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.H5CAL.002 CI38145U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.H8AAA.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.Q4WWW.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray N9.Q4WWW.002 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.VFXAA.007 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.GYLAL.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.Q5BWW.001 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray N9.Q4VWW.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.VCGAA.006 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GR7AA.002 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GNWAA.001 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GV2AA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GVWAA.001 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray N9.Q55WW.001 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q50AA.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q4WAA.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3FAA.004 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.GXEAA.003 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.GXCAA.002 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.GXDAA.002 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.GXBAA.006 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GRMAA.009 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray N9.Q4WWW.003 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GTPAA.011 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VCSAA.002 CI76500U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6500U 944339 Intel® Core™ i7-6500U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray N9.Q4VWW.004 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3ZAA.002 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q3FAA.005 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GZ9AA.001 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GPTAA.001 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray N9.Q5FWW.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GPTAA.008 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray N9.Q5DWW.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray CDX-0004C.0005
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER N9.Q5BWW.002 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray N9.HDRWW.001 CI38145U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.H62AA.008 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.HE4WW.001 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NX.GUHAA.002 CI77Y75/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 953348 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray NH.Q4AAL.003 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q4AAL.004 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.H1SAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GNPAL.038 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.GR4AL.006 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GR5AL.005 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.VGTAA.003 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGTAA.004 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.GZGWW.001 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.VGTAA.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGTAA.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GUWAL.002 CI36006U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray NX.VGUAA.003 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGUAA.004 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGUAA.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGUAA.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GC2AA.019 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GSFAA.004 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GPTAA.011 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NH.Q3NAA.005 CI98950HK NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 I9-8950HK 975241 Intel® Core™ i9-8950HK Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray NX.GNPAA.004 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GXZAA.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H0AAA.001 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NH.Q2YAA.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q3FAA.006 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3DAA.005 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GXGAA.003 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.GY3AA.003 PQCN3710 NOTEBOOK 1273 14nm BRASWELL INTEL(R) PENTIUM(R) N3710 947020 Intel® Pentium® Processor N3710 (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray NX.GTMAA.004 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.H2LAL.002 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q4AAL.007 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.H1SAA.002 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GSYAA.007 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H37AA.001 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GSYAA.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H2QAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q2KAL.002 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GC2AA.021 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray N9.GZCWW.001 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q2LAA.002 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.H2MAL.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H2MAL.005 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q3NAA.007 CI98950HK NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 I9-8950HK 975241 Intel® Core™ i9-8950HK Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray NX.GY0AL.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GT1AL.003 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.GXBAL.002 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NT.LDSAL.003 CI57200U/H22 WINDOWS TABLET-NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NH.Q4DAA.001 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GTMAA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q3NAA.006 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GYYAA.002 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GTPAA.013 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GZAAA.004 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GYGAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.GXCAA.003 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3ZAA.005 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3ZAA.006 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.H2LAL.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H2LAL.004 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.H37AA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GXGAA.005 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.H38AA.002 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H38AA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray CDX-0004C.0006
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER NX.GNPAA.003 CI37100U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100U 953354 Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray NX.H0UAA.003 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NH.Q3ZAA.007 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GXGAA.007 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NH.Q3EAA.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q4CAA.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.VFUAA.005 CI37130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7130U 958406 Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray NX.H3YAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H67WW.001 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.H3FAL.002 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H0UWW.001 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray N9.GNLWW.001 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray N9.Q3LWW.001 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray N9.Q3DWW.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray N9.GY3WW.001 PQCN3710 NOTEBOOK 1273 14nm BRASWELL INTEL(R) PENTIUM(R) N3710 947020 Intel® Pentium® Processor N3710 (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray NX.GNWAA.002 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.H1SAA.003 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q4AAL.008 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.H3GAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NT.LDTAA.002 CI37130U WINDOWS TABLET-NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7130U 958406 Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray NT.LDTAA.003 CI57200U/H22 WINDOWS TABLET-NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GZBAA.001 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GZ9AA.002 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.H1MAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H18WW.001 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H6GWW.002 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NH.Q3YAA.005 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3ZAA.004 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray N9.H60WW.004 CI38145U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GP3AA.002 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray N9.H7KWW.002 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.VGGAA.005 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray N9.H6NWW.002 CI38145U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray NH.Q4CAA.002 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray N9.H6AWW.001 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NH.Q3YAA.003 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray N9.H62WW.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NH.Q2YAA.006 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.VD2AA.001 CI76500U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 I7-6500U 944339 Intel® Core™ i7-6500U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray NX.GNTAL.012 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.VGTAA.013 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GZRAA.012 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GJEAA.001 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GPLAL.007 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GVZAA.004 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NX.H2AAL.001 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.GNPAL.015 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.H2NAL.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q4AAL.009 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q4WAA.002 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GQGAA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGGAA.001 CI77500U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 953352 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray NX.VCSAA.001 CI56200U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray NX.EFJAA.001 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.EFJAA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H1CAL.004 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.H2LAL.007 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.VCYAA.009 CI56200U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray NX.VDKAA.196 CI56200U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray NT.LDSAA.007 CI57200U/H22 WINDOWS TABLET-NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GL2AA.005 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GVZAA.005 ICQN4100 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.VGGAA.006 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.VGGAA.007 CI77500U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 953352 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray NX.GR7AA.017 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GR7AA.015 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.H0DAA.003 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.VFXAA.009 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray CDX-0004C.0007
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER NX.GPTAA.002 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.GP0AA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.VGTAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GSFAA.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.G4XAA.005 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.H0UAA.005 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NH.GTQAA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GXZAA.010 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GVZAA.006 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NH.GXCAA.004 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3FAA.007 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q2KAA.001 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.VGGAA.011 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.VGGAA.012 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NT.LDSAA.002 CI57200U/H22 WINDOWS TABLET-NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NH.Q4HAA.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GRMAA.011 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NH.GXDAA.004 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.GXDAA.003 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q3YAA.006 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.VGVAA.001 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGVAA.002 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VGVAA.003 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.H1WAA.002 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GTCAA.023 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.VHJAA.004 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VHJAA.005 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.VHJAA.003 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GVWAA.002 ICQN4100 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GW5AA.001 ICQN4100 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GW4AA.001 ICQN4100 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H37AA.005 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H4QAA.002 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H47AA.002 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H47AA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H4QAA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GVZAA.007 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.GS3AA.003 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GE8AA.003 CI56200U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 I5-6200U 944338 Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray NX.GNSAL.003 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GNSAL.015 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GTGAL.013 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GTHAL.017 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H2BAL.005 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.H2BAL.007 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.H2BAL.006 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.H2AAL.005 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.H1PAL.004 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NH.Q3FAL.007 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q4HAL.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.H1SAL.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GUWAL.009 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray N9.GUMWW.004 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NH.Q3NAL.008 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GZRAA.010 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H5UAA.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GZRAA.011 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GY1AA.001 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H37AA.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GXZAA.011 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GNZAA.001 CM3855U NOTEBOOK 1272 14nm SKYLAKE INTEL(R) CELERON(R) 3855U 944335 Intel® Celeron® Processor 3855U (2M Cache, 1.60 GHz) FC-BGA14C, Tray NX.GUJAA.001 CI77Y75/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 953348 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray NX.H2AAA.001 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray N9.GWGWW.008 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.GWGAA.002 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.GWGAA.003 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NT.LDSAA.003 CI57200U/H22 WINDOWS TABLET-NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NT.LDRAA.004 PQCN4200 WINDOWS TABLET-NB 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray CDX-0004C.0008
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER NX.H60AA.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.H62AA.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.H2AAL.002 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.VGVAA.004 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GXGAA.009 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NH.GXCAA.005 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3NAL.007 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.H0UAA.006 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NH.Q3DAL.009 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.GXCAA.006 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.H0UAA.004 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NT.LDRAA.002 PQCN4200 WINDOWS TABLET-NB 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray N9.HB0WW.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GT0AA.001 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H1LAA.001 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.GTCAA.025 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.EFJAA.004 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H3UAA.002 CI78565U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I7-8565U 982918 Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray NX.H3WAA.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GRMAA.004 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.H1QAA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H8AAA.003 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GC2AA.005 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GC7AA.003 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GK4AA.025 CI57200U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 951957 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.VG0AA.002 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.H89AA.003 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.H89AA.004 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.EFJWW.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H7QAA.002 CI78565U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I7-8565U 982918 Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray N9.H92WW.001 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray N9.H1WWW.002 CI38130U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-8130U 963178 Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H09WW.003 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H4BAA.002 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H4BAA.003 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.H1LAA.002 ICQN3450 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3450 951833 Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray NX.H1LAA.003 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.GY3AL.003 ICDN3060_OFF NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 951881 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GY3AL.004 ICDN3060_OFF NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 951881 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.H2BAL.015 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NX.GYGAL.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NH.Q3MAL.010 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GWGAA.004 PQCN4200 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) N4200 951830 Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray NX.H3WAA.002 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GSWAA.004 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H8AAA.004 CI78565U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I7-8565U 982918 Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray NH.Q4QAA.001 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GXZAA.012 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H64AA.001 PQCN3710 NOTEBOOK 1273 14nm BRASWELL INTEL(R) PENTIUM(R) N3710 947020 Intel® Pentium® Processor N3710 (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray NX.GXZAA.013 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H89AA.006 CI38145U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.G4XAA.006 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.H89AA.005 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GNSAL.021 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GNPAL.037 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.GS6AL.026 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.GNPAL.034 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.GM8AA.006 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.GR4AL.012 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray N9.G55WW.010 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.VGTAA.011 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GR4AL.007 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.EFJAA.005 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H1WAA.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GVWAA.003 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NT.LDTAA.006 CI77500U/H22 WINDOWS TABLET-NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 953352 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray NX.GR7AA.014 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GUJAL.003 CI77Y75/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 953348 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray CDX-0004C.0009
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER NX.GTMAL.002 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.VCGAL.013 ICQN3160 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3160 947023 Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray NX.GUJAL.002 CI77Y75/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7Y75 953348 Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray NX.GV2AA.002 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NT.LCQAA.006 ATMZ8350 WINDOWS TABLET-NB 1273 14nm CHERRY TRAIL INTEL(R) ATOM(TM) Z8350 947027 Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray NX.H62AA.003 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.H99WW.005 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NX.EFJAA.009 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H89AA.007 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.VHUAA.002 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NX.H4CAA.003 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray N9.HB0WW.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray N9.H94WW.003 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray N9.H90WW.002 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NX.H93AA.001 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NX.H99AA.002 ICQN4100 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H4EAA.001 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.VHTAA.001 ICQN4100 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GZJAA.001 ICQN4100 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4100 961639 Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H9FAA.001 CI37020U23 NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 960019 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.H8YAA.001 ICDN4000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) N4000 961640 Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray NX.GXUAA.002 PQCN5000 NOTEBOOK 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER N5000 961638 Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray NX.H38AA.006 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GN3AA.001 ICDN3060 NOTEBOOK 1273 14nm BRASWELL INTEL(R) CELERON(R) N3060 947022 Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray NX.H4CAA.002 CI58265U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I5-8265U 982921 Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.VGQAA.002 CI78550U NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GZ9AA.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.H89AA.008 CI38145U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GTJAA.001 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H16AA.002 CI38145U NOTEBOOK 1272 14nm WHISKEY LAKE N/A I3-8145U 980656 Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray NX.GTGAL.007 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GNSAL.014 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.GNPAL.008 CI36006U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6006U 950664 Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray NX.GPAAL.004 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NH.Q2RAL.007 CI57300HQ NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray NH.Q2RAL.011 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NH.Q2BAL.009 CI57300HQ NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray NH.Q2BAL.008 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NH.Q2RAL.029 CI57300HQ NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7300HQ 952959 Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray NH.Q2RAL.028 CI77700HQ NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700HQ 952957 Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray NX.GNPAL.005 CI57200U/H22 NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7200U 953353 Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray NH.Q3MAL.004 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NH.Q3LAL.003 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NH.Q3FAL.001 CI78750H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 I7-8750H 963718 Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray NX.GTGAL.014 ICDN3350 NOTEBOOK 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) N3350 951834 Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray NX.H2BAL.014 CI37020UF NOTEBOOK 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7020U 959164 Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray NX.H23AL.004 CI58300H NOTEBOOK 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8300H 963720 Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray NX.GWTAL.003 CI58250U NOTEBOOK 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray NX.GDDAL.002 CI36100U NOTEBOOK 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 I3-6100U 944334 Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray DT.Z09AA.004 937260 1272 14nm BROADWELL INTEL(R) CELERON(R) 3205U 937260 Intel® Celeron® Processor 3205U (2M Cache, 1.50 GHz) FC-BGA14F, Tray DQ.VPFAA.002 954033 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954033 Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray DG.E04AA.002 953004 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953004 Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray DG.E04AA.001 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DG.B83AA.003 953004 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953004 Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray DQ.BA9AA.002 959160 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray DQ.B86AA.004 952998 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400T 952998 Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray DT.Z0KAA.001 939367 1272 14nm BROADWELL INTEL(R) CELERON(R) 3215U 939367 Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray DT.Z0JAA.001 939360 1272 14nm BROADWELL N/A I7-5500U 939360 Intel® Core™ i7-5500U Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray DQ.Z0EAA.001 939367 1272 14nm BROADWELL INTEL(R) CELERON(R) 3215U 939367 Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray DQ.Z0DAA.001 939367 1272 14nm BROADWELL INTEL(R) CELERON(R) 3215U 939367 Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray DQ.Z0FAA.001 939362 1272 14nm BROADWELL N/A I5-5200U 939362 Intel® Core™ i5-5200U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray DQ.Z0GAA.001 939360 1272 14nm BROADWELL N/A I7-5500U 939360 Intel® Core™ i7-5500U Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray DT.VQ0AA.005 954047 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100T 954047 Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray DT.VQ0AA.006 952998 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400T 952998 Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray DT.VQ0AA.017 945383 1272 14nm SKYLAKE INTEL(R) CELERON(R) G3900T 945383 Intel® Celeron® Processor G3900T (2M Cache, 2.60 GHz) FC-LGA14C, Tray DQ.VPKAA.003 953001 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7500 953001 Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C, Tray DQ.VPJAA.003 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DQ.BACAA.001 958406 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7130U 958406 Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray CDX-0004C.00010
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER DT.B89AA.024 954033 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954033 Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray DT.B89AA.029 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.B89AA.033 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.B89AA.034 954033 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954033 Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray DG.E06AA.001 953004 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953004 Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray DG.B83AA.018 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DG.E04AA.020 953004 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953004 Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray DQ.VPGAA.001 954033 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954033 Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray DQ.B8UAA.002 954047 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100T 954047 Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray DQ.B8UAA.003 952998 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400T 952998 Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray DG.B83AA.013 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.B89AA.030 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.B89AA.010 954033 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954033 Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray DQ.B8RAA.004 953352 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7500U 953352 Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray DT.B89AA.004 953004 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953004 Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray DT.B89AA.005 953004 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-7700 953004 Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray DT.B89AA.028 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.B89AA.008 952986 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-7400 952986 Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.BAPAA.002 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.BAQAA.001 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.Z0NAA.001 953360 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3865U 953360 Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray DT.Z0RAA.001 958406 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7130U 958406 Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray DT.Z0SAA.001 959160 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray DT.Z0TAA.001 959163 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 I7-8550U 959163 Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray DG.E0HAA.004 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E0HAA.005 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E0HAA.006 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E0HAA.007 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DT.BAPAA.003 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.BAPAA.004 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.BAPAA.006 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DT.BAPAA.007 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DG.E0QAA.001 960620 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600K 960620 Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, Tray DG.E0QAA.002 960620 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8600K 960620 Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, Tray DG.E0QAA.003 960617 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700K 960617 Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray DG.E0QAA.004 960617 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700K 960617 Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray DT.BARAA.001 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.BARAA.002 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.BARAA.003 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E0HAA.008 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E0HAA.009 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.VRAAA.001 963592 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500T 963592 Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.BAPAA.001 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.BAPAA.012 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.BAPAA.013 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.BARAA.004 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.Z0NAA.002 953360 1272 14nm KABY LAKE INTEL(R) CELERON(R) 3865U 953360 Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray DT.Z0RAA.002 958406 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7130U 958406 Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray DT.VPUAA.001 952994 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) G4560 952994 Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C, Tray DQ.BBUAA.001 959160 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray DG.E0HAA.014 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DT.BAPAA.021 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DQ.BBUAA.004 959160 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray DT.BARAA.005 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.BAPAA.023 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.VPUAA.002 954033 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 I3-7100 954033 Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray DG.E11AA.001 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DT.BAPAA.011 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DG.E0HAA.021 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E0HAA.022 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E0HAA.023 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DQ.BA9AA.003 959160 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 I5-8250U 959160 Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray DQ.BCEAA.001 963540 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400T 963540 Intel® Core™ i5-8400T Processor (9M Cache, up to 3.30 GHz) FC-LGA14C, Tray DQ.BCEAA.002 963506 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700T 963506 Intel® Core™ i7-8700T Processor (12M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.VRDAA.001 963660 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100T 963660 Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray DT.VRDAA.002 963660 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100T 963660 Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray DT.VRDAA.003 963592 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500T 963592 Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.VRDAA.004 963592 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500T 963592 Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray CDX-0004C.00011
ITEM NUMBER CPU PRODUCT TYPE PROCESS CODE PROCESS NODE ARCHITECTURE PROCESSOR PROCESSOR# MMID EXTERNAL PRODUCT MARKETING NAME ACER DT.VRDAA.005 963592 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500T 963592 Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.VRDAA.006 963506 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700T 963506 Intel® Core™ i7-8700T Processor (12M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E11AA.012 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E11AA.004 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DT.BARAA.006 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.BARAA.007 960619 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8400 960619 Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray DG.E11AA.014 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DQ.VS0AA.001 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DQ.VS0AA.002 963598 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray DQ.VS0AA.003 963598 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray DQ.VRZAA.001 963598 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray DQ.VRZAA.002 963598 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray DQ.VRZAA.003 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DQ.VRZAA.004 960618 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700 960618 Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray DT.VQVAA.001 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.VQVAA.002 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.VR0AA.002 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.VR0AA.003 960012 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100 960012 Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray DT.VQVAA.005 963598 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray DT.VQVAA.006 963598 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray DT.VR0AA.006 963598 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray DT.VR0AA.007 963598 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500 963598 Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray DT.VRDAA.018 963506 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 I7-8700T 963506 Intel® Core™ i7-8700T Processor (12M Cache, up to 4.00 GHz) FC-LGA14C, Tray DT.VRDAA.017 963592 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500T 963592 Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.VRDAA.013 963660 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100T 963660 Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray DT.VRDAA.014 963660 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I3 I3-8100T 963660 Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray DT.VRDAA.016 963592 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500T 963592 Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray DT.VRDAA.015 963592 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 I5-8500T 963592 Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray CDX-0004C.00012
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND PE200S Motherboard PE200S E3930 14 nm APOLLO LAKE INTEL(R) ATOM(TM) PE200S Motherboard PE200S E3940 14 nm APOLLO LAKE INTEL(R) ATOM(TM) PE200S Motherboard PE200S E3950 14 nm APOLLO LAKE INTEL(R) ATOM(TM) PRIME J3355I-C Motherboard PRIME J3355I-C J3355 14 nm APOLLO LAKE INTEL(R) CELERON(R) VivoBook Laptop E201NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) VivoBook Laptop E203NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) VivoBook Laptop E402NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) E Series Laptop E403NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) VivoBook Laptop TP202NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) VivoBook Laptop TP203NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) VivoBook Laptop TP203NAH N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) VivoBook Laptop X540NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) X Series Laptop X541NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) Chromebook Laptop C213NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) Chromebook Laptop C223NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) Chromebook Laptop C423NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) Chromebook Laptop C523NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) Chromebook Laptop C403NA N3350 14 nm APOLLO LAKE INTEL(R) CELERON(R) Laptop C223NA N3350/N4200 14 nm APOLLO LAKE INTEL(R) CELERON®, PENTIUM ® VivoBook Laptop TP401NA N3450 14 nm APOLLO LAKE INTEL(R) CELERON(R) X Series Laptop X541NA N3450 14 nm APOLLO LAKE INTEL(R) CELERON(R) VivoBook Laptop E402NA N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM(R) E Series Laptop E403NA N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM® VivoBook Laptop TP203NAH N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM® VivoBook Laptop TP401NA N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM® X Series Laptop X541NA N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM® VivoBook Laptop X751NA N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM® Chromebook Laptop C423NA N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM® Chromebook Laptop C523NA N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM® ASUSPRO Laptop P2540NV N4200 14 nm APOLLO LAKE INTEL(R) PENTIUM® ASUSPRO Desktop E410 Celeron N3150 14 nm BRASWELL INTEL(R) CELERON(R) ASUSPRO AIO A4110 J3160 14 nm BRASWELL INTEL(R) CELERON(R) E Series Laptop E402SA N3050 14 nm BRASWELL INTEL(R) CELERON(R) X Series Laptop X540SA N3050 14 nm BRASWELL INTEL(R) CELERON(R) X Series Laptop X553SA N3050 14 nm BRASWELL INTEL(R) CELERON(R) ASUSPRO Laptop P552SA N3050 14 nm BRASWELL INTEL(R) CELERON(R) N3050I-C Motherboard N3050I-C N3050 14 nm BRASWELL INTEL(R) CELERON(R) N3050T R2.0 Motherboard N3050T R2.0 N3050 14 nm BRASWELL INTEL(R) CELERON(R) ASUS 1 CDX-0005C.0001 CDX-0005C
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS N3050T Motherboard N3050T N3050 14 nm BRASWELL INTEL(R) CELERON(R) N3150I-C Motherboard N3150I-C N3050 14 nm BRASWELL INTEL(R) CELERON(R) Chromebook Laptop C300SA N3060 14 nm BRASWELL INTEL(R) CELERON(R) E Series Laptop E402SA N3060 14 nm BRASWELL INTEL(R) CELERON(R) Laptop E406SA N3060 14 nm BRASWELL INTEL(R) CELERON(R) Chromebook Laptop C202SA N3060 14 nm BRASWELL INTEL(R) CELERON(R) PRIME N3060T Motherboard PRIME N3060T N3060 14 nm BRASWELL INTEL(R) CELERON(R) N3060I-CM-A Motherboard N3060I-CM-A N3060 14 nm BRASWELL INTEL(R) CELERON(R) E Series Laptop E402SA N3150 14 nm BRASWELL INTEL(R) CELERON(R) ASUSPRO AIO A4110 N3150 14 nm BRASWELL INTEL(R) CELERON(R) Chromebook Laptop C300SA N3160 14 nm BRASWELL INTEL(R) CELERON(R) VivoBook Laptop X541SA N3160 14 nm BRASWELL INTEL(R) CELERON(R) N3160TH Motherboard N3160TH N3160 14 nm BRASWELL INTEL(R) CELERON(R) X Series Laptop X540SA N3700 14 nm BRASWELL INTEL(R) PENTIUM(R) X Series Laptop X553SA N3700 14 nm BRASWELL INTEL(R) PENTIUM(R) X Series Laptop X751SA N3700 14 nm BRASWELL INTEL(R) PENTIUM(R) N3700T Motherboard N3700T N3700 14 nm BRASWELL INTEL(R) PENTIUM(R) E Series Laptop E402SA N3710 14 nm BRASWELL INTEL(R) PENTIUM(R) Laptop E406SA N3710 14 nm BRASWELL INTEL(R) PENTIUM(R) X Series Laptop X540SA N3710 14 nm BRASWELL INTEL(R) PENTIUM(R) VivoBook Laptop X541SA N3710 14 nm BRASWELL INTEL(R) PENTIUM(R) X Series Laptop X751SA N3710 14 nm BRASWELL INTEL(R) PENTIUM(R) Chromebox Chrome Device CN62 Celeron 3205U 14 nm BROADWELL INTEL(R) CELERON(R) Chromebox Chrome Device CN62 Celeron 3215U 14 nm BROADWELL INTEL(R) CELERON(R) Transformer Book Laptop TP300LA i3-5005U 14 nm BROADWELL INTEL (R) CORE (TM) I3 X Series Laptop X540LA i3-5005U 14 nm BROADWELL INTEL (R) CORE (TM) I3 VivoBook Laptop X555LA i3-5005U 14 nm BROADWELL INTEL (R) CORE (TM) I3 X Series Laptop X751LA i3-5005U 14 nm BROADWELL INTEL (R) CORE (TM) I3 ASUSPRO Laptop P552LA i3-5005U 14 nm BROADWELL INTEL (R) CORE (TM) I3 X Series Laptop X455LA i3-5005U 14 nm BROADWELL INTEL (R) CORE (TM) I3 Transformer Book Laptop TP300LA i3-5010U 14 nm BROADWELL INTEL (R) CORE (TM) I3 Transformer Book Laptop TP500LA i3-5010U 14 nm BROADWELL INTEL (R) CORE (TM) I3 VivoBook Laptop X555LA i3-5010U 14 nm BROADWELL INTEL (R) CORE (TM) I3 X Series Laptop X751LA i3-5010U 14 nm BROADWELL INTEL (R) CORE (TM) I3 X Series Laptop X455LA i3-5010U 14 nm BROADWELL INTEL (R) CORE (TM) I3 Chromebox Chrome Device CN62 i3-5010U 14 nm BROADWELL INTEL (R) CORE (TM) I3 Transformer Book Laptop TP300LA i3-5020U 14 nm BROADWELL INTEL (R) CORE (TM) I3 X Series Laptop X540LA i3-5020U 14 nm BROADWELL INTEL (R) CORE (TM) I3 2 CDX-0005C.0002
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS VivoBook Laptop X555LA i3-5020U 14 nm BROADWELL INTEL (R) CORE (TM) I3 Transformer Book Laptop TP300LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 Transformer Book Laptop TP300LD i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 Transformer Book Laptop TP500LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 Transformer Book Laptop TP550LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 ZenBook Laptop UX303LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 X Series Laptop X540LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 VivoBook Laptop X555LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 X Series Laptop X751LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 ASUSPRO Laptop P552LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 ET2323I AIO ET2323I i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 PT2001 AIO PT2001 i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 K/A Series Laptop K401LB i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 K Series Laptop K501LX i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 Laptop N542LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 ZenBook Laptop UX305LA i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 X Series Laptop X555LB i5-5200U 14 nm BROADWELL INTEL (R) CORE (TM) I5 Laptop N591LN i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Transformer Book Laptop TP300LD i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Transformer Book Laptop TP500LA i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Transformer Book Laptop TP500LB i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Transformer Book Laptop TP550LA i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 ZenBook Laptop UX301LA i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 ZenBook Laptop UX303LA i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 ZenBook Laptop UX303LN i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 VivoBook Laptop X555LA i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 X Series Laptop X751LA i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 ASUSPRO Laptop P552LA i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 K/A Series Laptop K401LB i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 K Series Laptop K501LB i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 K Series Laptop K501LX i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Laptop N591LB i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Transformer Book Laptop TP300LJ i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Transformer Book Laptop TP550LJ i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 ZenBook Laptop UX303LB i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 X Series Laptop X302LJ i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 X Series Laptop X455LJ i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 X Series Laptop X455LN i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 3 CDX-0005C.0003
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS X Series Laptop X540LJ i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 X Series Laptop X555LB i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 X Series Laptop X555LJ i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 X Series Laptop X751LB i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 X Series Laptop X751LX i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Chromebox Chrome Device CN62 i7-5500U 14 nm BROADWELL INTEL (R) CORE (TM) I7 Transformer Book Laptop T300CHI M-5Y10 14 nm BROADWELL Intel® Core™ M-5Y10a Transformer Book Laptop T300FA M-5Y10 14 nm BROADWELL Intel® Core™ M-5Y10a ZenBook Laptop UX305FA M-5Y10 14 nm BROADWELL Intel® Core™ M-5Y10a Transformer Book Laptop T300CHI M-5Y71 14 nm BROADWELL Intel® Core™ M-5Y71 ZenBook Laptop UX305FA M-5Y71 14 nm BROADWELL Intel® Core™ M-5Y71 VivoStick Stick PC TS10 Z8300 14 nm CHERRY TRAIL INTEL(R) ATOM(TM) Transformer Book Laptop T101HA Z8350 14 nm CHERRY TRAIL INTEL(R) ATOM(TM) Transformer Book Laptop T102HA Z8350 14 nm CHERRY TRAIL INTEL(R) ATOM(TM) Transformer Book Laptop T103HAF Z8350 14 nm CHERRY TRAIL INTEL(R) ATOM(TM) VivoStick Stick PC TS10 Z8350 14 nm CHERRY TRAIL INTEL(R) ATOM(TM) Transformer Book Laptop T100HA Z8500 14 nm CHERRY TRAIL INTEL(R) ATOM(TM) VivoMini Mini PC VC66-C Celeron G4900 14 nm COFFEE LAKE INTEL(R) CELERON(R) VivoMini Mini PC VC66-C i3-8100 14 nm COFFEE LAKE INTEL (R) CORE (TM) I3 PB Series Mini PC PB60 i3-8100T 14 nm COFFEE LAKE INTEL (R) CORE (TM) I3 PB Series Mini PC PB60G i3-8100T 14 nm COFFEE LAKE INTEL (R) CORE (TM) I3 TUF Laptop FX504GD i5-8300H 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 TUF Laptop FX504GE i5-8300H 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 TUF Laptop FX504GM i5-8300H 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 TUF Laptop FX705GM i5-8300H 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 ROG Laptop GL503GE i5-8300H 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 TUF Desktop FX10CP I5-8400 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 ROG Desktop GL12CP I5-8400 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 TUF Desktop FX10CS I5-8400 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 VivoMini Mini PC VC66-C i5-8400 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 PB Series Mini PC PB60 i5-8400T 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 PB Series Mini PC PB60G i5-8400T 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 VivoMini Mini PC VC66-C i5-8500 14 nm COFFEE LAKE INTEL(R) CORE(TM) I5 ROG Desktop G21CN I7-8700 14 nm COFFEE LAKE INTEL (R) CORE (TM) I7 ROG Desktop GL12CM I7-8700 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Desktop GL12CP I7-8700 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 TUF Desktop FX10CS I7-8700 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 VivoMini Mini PC VC66-C i7-8700 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 4 CDX-0005C.0004
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS ROG Desktop GL12CM I7-8700K 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 Zen AiO AIO Z272SD I7-8700T 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 PB Series Mini PC PB60 i7-8700T 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 PB Series Mini PC PB60G i7-8700T 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ZenBook Laptop UX550GDX i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ZenBook Laptop UX550GE i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 VivoBook Laptop X580GD i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 TUF Laptop FX504GD i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 TUF Laptop FX504GE i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 TUF Laptop FX504GM i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 TUF Laptop FX505GD i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 TUF Laptop FX705GE i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 TUF Laptop FX705GM i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop G703GI i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop G703GS i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GL503GE i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GL504GM i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GL504GS i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GL703GE i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GL703GM i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GL703GS i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GL704GM i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GM501GS i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GX501GI i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GX531GM i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 ROG Laptop GX531GS i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 Zen AiO AIO ZN242GD i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I7 TUF Laptop FX505GE i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I8 TUF Laptop FX705GD i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I9 ROG Laptop G703GX i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I10 ROG Laptop GL504GV i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I11 ROG Laptop GL504GW i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I12 ROG Laptop GL704GV i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I13 ROG Laptop GL704GW i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I14 ROG Laptop GM501GM-GM501GM i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I15 ROG Laptop GM501GM-GU501GM i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I16 ROG Laptop GX531GW i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I17 ROG Laptop GX531GX i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I18 5 CDX-0005C.0005
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS ROG Laptop GX701GX i7-8750H 14 nm COFFEE LAKE INTEL(R) CORE (TM) I19 ROG Desktop GL12CX I7-9700K 14 nm COFFEE LAKE INTEL (R) CORE (TM) I7 ProArt Series Mini PC PA90 i7-9700K 14 nm COFFEE LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX550GEX i9-8950HK 14 nm COFFEE LAKE INTEL(R) CORE(TM) I9 ROG Laptop G703GI i9-8950HK 14 nm COFFEE LAKE INTEL(R) CORE(TM) I9 ROG Laptop G703GX i9-8950HK 14 nm COFFEE LAKE INTEL(R) CORE(TM) I9 ROG Desktop GL12CX I9-9900K 14 nm COFFEE LAKE INTEL(R) CORE(TM) I9 ProArt Series Mini PC PA90 i9-9900K 14 nm COFFEE LAKE INTEL(R) CORE(TM) I9 VivoMini Mini PC VC66-C Pentium G5400 14 nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD PB Series Mini PC PB60 Pentium G5400T 14 nm COFFEE LAKE INTEL(R) PENTIUM(R) GOLD PN Series Mini PC PN40 Celeron J4005 14 nm GEMINI LAKE INTEL(R) CELERON(R) PN Series Mini PC PN40 Celeron J5005 14 nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER PN Series Mini PC PN40 Celeron N4000 14 nm GEMINI LAKE INTEL(R) CELERON(R) PN Series Mini PC PN40 Celeron N4100 14 nm GEMINI LAKE INTEL(R) CELERON(R) PN Series Mini PC PN40 Celeron N5000 14 nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER PRIME J4005I-C Motherboard PRIME J4005I-C J4005 14 nm GEMINI LAKE INTEL(R) CELERON(R) VivoBook Laptop E203MA N4000 14 nm GEMINI LAKE INTEL(R) CELERON(R) Laptop E406MA N4000 14 nm GEMINI LAKE INTEL(R) CELERON(R) VivoBook Laptop TP401MA N4000 14 nm GEMINI LAKE INTEL(R) CELERON(R) X Series Laptop X540MA N4000 14 nm GEMINI LAKE INTEL(R) CELERON(R) V161 AIO V161GA N4000 14 nm GEMINI LAKE INTEL(R) CELERON(R) PRIME N4000T Motherboard PRIME N4000T N4000 14 nm GEMINI LAKE INTEL(R) CELERON(R) Laptop C204MA N4000/N4100/N5000 14 nm GEMINI LAKE INTEL(R) CELERON®, PENTIUM ® SILVER Laptop C214MA N4000/N4100/N5000 14 nm GEMINI LAKE INTEL(R) CELERON®, PENTIUM ® SILVER Laptop C424MA N4000/N4100/N5000 14 nm GEMINI LAKE INTEL(R) CELERON®, PENTIUM ® SILVER Laptop P2540MB N4000/N4100/N5000 14 nm GEMINI LAKE INTEL(R) CELERON®, PENTIUM ® SILVER Laptop E406MA N5000 14 nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER VivoBook Laptop TP401MA N5000 14 nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER X Series Laptop X540MA N5000 14 nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER VivoBook Laptop X705MA N5000 14 nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER Motherboard MINING I 3865U 14 nm KABY LAKE INTEL(R) CELERON(R) Chromebox Chrome Device CN65 Celeron 3865U 14 nm KABY LAKE INTEL(R) CELERON(R) ASUSPRO Desktop E420 Celeron 3865U 14 nm KABY LAKE INTEL(R) CELERON(R) VivoBook Laptop X540UA i3-7020U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 VivoMini Mini PC VC66 i3-7100 14 nm KABY LAKE INTEL (R) CORE (TM) I3 ASUSPRO Desktop E520 i3-7100T 14 nm KABY LAKE INTEL (R) CORE (TM) I3 VivoBook Laptop TP510UA i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 ZenBook Laptop UX430UA i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 6 CDX-0005C.0006
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS VivoBook Laptop X510UA i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 VivoBook Laptop X541UA i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 X Series Laptop X556UA i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 X Series Laptop X756UA i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 ASUSPRO Laptop P2540UA i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 Chromebox Chrome Device CN65 i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 VivoMini Mini PC UN65U i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 VivoMini Mini PC VM65N i3-7100U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 VivoBook Laptop TP412UA i3-8130U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 ZenBook Laptop UX331UA i3-8130U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 VivoBook Laptop X540UA i3-8130U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 VivoBook Laptop X705UA i3-8130U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 PN Series Mini PC PN60-B i3-8130U 14 nm KABY LAKE INTEL (R) CORE (TM) I3 Transformer Book Laptop TP301UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop TP410UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop TP501UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop TP501UQ i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX310UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX330UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX360UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX390UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX430UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX430UQ i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX560UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X441UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X510UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X540UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X541UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 X Series Laptop X556UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 X Series Laptop X556UQ i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 X Series Laptop X556UR i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 X Series Laptop X756UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ASUSPRO Laptop B9440UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ASUSPRO Laptop P2440UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ASUSPRO Laptop P2540UA i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Vivo AiO AIO V221IC i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Vivo AiO AIO V241IC i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Zen AiO AIO ZN241IC i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 7 CDX-0005C.0007
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS VivoMini Mini PC UN65U i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoMini Mini PC VM65N i5-7200U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ROG Laptop GL553VD i5-7300HQ 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ROG Laptop GL702VI i5-7300HQ 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ROG Laptop GL753VD i5-7300HQ 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X580VD i5-7300HQ 14 nm KABY LAKE INTEL(R) CORE(TM) I5 TUF Laptop FX503VD i5-7300HQ 14 nm KABY LAKE INTEL(R) CORE(TM) I5 TUF Laptop FX503VM i5-7300HQ 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ROG Laptop GL503VS i5-7300HQ 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoPC Desktop M80CJ i5-7300HQ 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Desktop G11CD I5-7400 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoPC Desktop K31CD I5-7400 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoPC Desktop M32CD I5-7400 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Desktop D520SF I5-7400 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ROG Mini PC GR8II i5-7400 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ROG Mini PC GR8II6G i5-7400 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoMini Mini PC VC66 i5-7400 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Zen AiO AIO ZN270IE I5-7400T 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ASUSPRO Desktop E520 i5-7400T 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoMini Mini PC VC66 i5-7500 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoMini Mini PC VC68V i5-7500 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX360CA i5-7Y54 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop TP410UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop TP412UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop TP510UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop TP510UF i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX330UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX331UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX331UN i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX430UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX430UN i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX460UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX461UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX461UN i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX561UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X411UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X510UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X510UN i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 8 CDX-0005C.0008
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS VivoBook Laptop X530UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X540UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X570UD i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 ASUSPRO Laptop P2540UB i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Vivo AiO AIO V241IC i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Vivo AiO AIO V272UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X420UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 X Series Laptop X540UB i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 VivoBook Laptop X705UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Vivo AiO AIO V222UA i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Chromebox Chrome Device CN65 i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 PN Series Mini PC PN60-B i5-8250U 14 nm KABY LAKE INTEL(R) CORE(TM) I5 Transformer Book Laptop T304UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop TP410UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop TP501UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop TP501UQ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX330UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX360UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX370UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX390UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX410UQ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX430UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX430UQ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX490UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX510UX i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX560UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX560UQ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX560UX i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X510UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X510UQ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X541UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 X Series Laptop X541UJ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X541UV i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X542UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 X Series Laptop X556UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 X Series Laptop X556UQ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X705UQ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ASUSPRO Laptop B9440UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 9 CDX-0005C.0009
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS ASUSPRO Laptop P2440UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ASUSPRO Laptop P2440UQ i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ASUSPRO Laptop P2540UA i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoMini Mini PC UN65U i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoMini Mini PC VM65N i7-7500U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 Desktop G11CD I7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Desktop G20CI I7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Desktop GD30CI I7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoPC Desktop K31CD I7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoPC Desktop M32CD I7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Mini PC GR8II i7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Mini PC GR8II6G i7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoMini Mini PC VC66 i7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoMini Mini PC VC68V i7-7700 14 nm KABY LAKE INTEL (R) CORE (TM) I7 FX/ZX Series Laptop FX502VD i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VS i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL502VM i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL502VS i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL503VD i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL503VM i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL553VD i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL553VE i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL702VI i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL702VM i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL702VS i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL703VD i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL703VM i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL753VD i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL753VE i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GX501VIK i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GX501VSK i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX550VE i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 X Series Laptop X550VX i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X580VD i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 TUF Laptop FX503VD i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 TUF Laptop FX503VM i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GL503VS i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 Zen AiO AIO ZN242IF i7-7700HQ 14 nm KABY LAKE INTEL (R) CORE (TM) I7 10 CDX-0005C.00010
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS ROG Desktop GT51CH I7-7700K 14 nm KABY LAKE INTEL (R) CORE (TM) I7 Zen AiO AIO Z240IE I7-7700T 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ASUSPRO Desktop E520 i7-7700T 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop G701VI i7-7820HK 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VS i7-7820HK 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop GX800VH i7-7820HK 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ROG Laptop G703VI i7-7820HK 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop TP401CA i7-7Y75 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop TP410UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop TP412UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop TP510UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop TP510UQ i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX331UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX370UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX391UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX410UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX430UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX430UN i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX461UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX461UN i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX490UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX561UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X542UN i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ZenBook Laptop UX561UD i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X411UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X411UN i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X411UQ i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X510UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X510UF i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X510UN i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X510UQ i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X530UN i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X540UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X542UA i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X570UD i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X705UD i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 VivoBook Laptop X705UN i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 ASUSPRO Laptop P2540UB i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 11 CDX-0005C.00011
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS ASUSPRO Laptop P5440UF i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 PN Series Mini PC PN60-B i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 Chromebox Chrome Device CN65 i7-8550U 14 nm KABY LAKE INTEL (R) CORE (TM) I7 Laptop X406UA i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X407UA/UB/UF i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X409UA/UB/UJ i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X411UA/UF/UN i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X412UA/UB/UF i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X420UA i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop TP412UA i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X507UA/UB/UF i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X509UA/UB/UJ i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X510UA/UF i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X512UA/UB/UF i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X540UA/UB i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM Laptop X705UA/UB i7-8550U/i5-8250U/i3-8130U/4417U 14 nm KABY LAKE EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM VivoBook Laptop TP401CA m3-7Y30 14 nm KABY LAKE INTEL (R) CORE (TM) M ZenBook Laptop UX330CA m3-7Y30 14 nm KABY LAKE INTEL (R) CORE (TM) M ZenBook Laptop UX360CA m3-7Y30 14 nm KABY LAKE INTEL (R) CORE (TM) M Laptop MJ401TA M3-8100Y 14 nm KABY LAKE INTEL (R) CORE (TM) M Laptop C434TA M3-8100Y/4415Y/i5-8200Y/i7-8500Y 14 nm KABY LAKE TEL(R) PENTIUM®, INTEL ® CORE ™ M, I5, Chromebook Laptop C302CA 4405Y 14 nm SKYLAKE INTEL(R) PENTIUM(R) Motherboard H110I-CM-AA G3900TE 14 nm SKYLAKE INTEL(R) CELERON(R) VivoBook Laptop X540UA i3-6006U 14 nm SKYLAKE INTEL (R) CORE (TM) I3 VivoBook Laptop X541UA i3-6006U 14 nm SKYLAKE INTEL (R) CORE (TM) I3 ASUSPRO Laptop P553UA i3-6006U 14 nm SKYLAKE INTEL (R) CORE (TM) I3 VivoPC Desktop K31CD I3-6098P 14 nm SKYLAKE INTEL (R) CORE (TM) I3 VivoPC Desktop M32CD I3-6100 14 nm SKYLAKE INTEL (R) CORE (TM) I3 Motherboard H110I-CM-AA i3-6100 14 nm SKYLAKE INTEL (R) CORE (TM) I3 VivoMini Mini PC VC66 i3-6100 14 nm SKYLAKE INTEL (R) CORE (TM) I3 VivoMini Mini PC VC65R i3-6100T 14 nm SKYLAKE INTEL (R) CORE (TM) I3 VivoBook Laptop TP501UA i3-6100U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop X541UA i3-6100U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X556UA i3-6100U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X756UA i3-6100U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoMini Mini PC VM65N i3-6100U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop X541UA i5-6198DU 14 nm SKYLAKE INTEL(R) CORE(TM) I5 X Series Laptop X555UA i5-6198DU 14 nm SKYLAKE INTEL(R) CORE(TM) I5 12 CDX-0005C.00012
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS X Series Laptop X556UQ i5-6198DU 14 nm SKYLAKE INTEL(R) CORE(TM) I5 X Series Laptop X556UR i5-6198DU 14 nm SKYLAKE INTEL(R) CORE(TM) I5 K Series Laptop K501UX i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR Laptop N543UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR Transformer Book Laptop T303UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR Transformer Book Laptop TP300UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR Transformer Book Laptop TP301UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop TP501UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX303UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX305UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX310UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX360UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX560UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop X541UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X555UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X555UB i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X556UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X556UB i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X556UQ i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X756UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR Laptop X756UX i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR ASUSPRO Laptop P453UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR ASUSPRO Laptop P553UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR Zen AiO AIO ZN240IC i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X456UA i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X555UF i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X556UF i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoMini Mini PC VM65N i5-6200U 14 nm SKYLAKE INTEL (R) PROCESSOR ROG Laptop GL502VM i5-6300HQ 14 nm SKYLAKE INTEL(R) CORE(TM) I5 ROG Laptop GL552VW i5-6300HQ 14 nm SKYLAKE INTEL(R) CORE(TM) I5 ROG Laptop GL553VW i5-6300HQ 14 nm SKYLAKE INTEL(R) CORE(TM) I5 VivoBook Laptop N551VW i5-6300HQ 14 nm SKYLAKE INTEL(R) CORE(TM) I5 VivoBook Laptop N552VX i5-6300HQ 14 nm SKYLAKE INTEL(R) CORE(TM) I5 X Series Laptop X550VQ i5-6300HQ 14 nm SKYLAKE INTEL(R) CORE(TM) I5 Desktop G11CD I5-6400 14 nm SKYLAKE INTEL(R) CORE(TM) I5 ROG Desktop G20CB I5-6400 14 nm SKYLAKE INTEL(R) CORE(TM) I5 VivoPC Desktop K31CD I5-6400 14 nm SKYLAKE INTEL(R) CORE(TM) I5 VivoPC Desktop M32CD I5-6400 14 nm SKYLAKE INTEL(R) CORE(TM) I5 13 CDX-0005C.00013
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS ROG Mini PC GR8II i5-6400 14 nm SKYLAKE INTEL(R) CORE(TM) I5 Vivo AiO AIO V230IC I5-6400T 14 nm SKYLAKE INTEL(R) CORE(TM) I5 Zen AiO AIO Z240IC I5-6400T 14 nm SKYLAKE INTEL(R) CORE(TM) I5 VivoMini Mini PC VC65R i5-6400T 14 nm SKYLAKE INTEL(R) CORE(TM) I5 Motherboard H110I-CM-AA i5-6500TE 14 nm SKYLAKE INTEL(R) CORE(TM) I5 K Series Laptop K501UW i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR K Series Laptop K501UX i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR Transformer Book Laptop T303UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR Transformer Book Laptop TP301UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop TP501UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop TP501UB i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop TP501UQ i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX303UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX303UB i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX305UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX310UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX390UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX510UW i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX510UX i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX560UQ i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX560UX i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop X541UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop X541UV i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X555UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X555UB i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X556UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X556UQ i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X556UR i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR Laptop X756UX i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR ASUSPRO Laptop P453UA i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR K Series Laptop K501UB i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR Laptop N592UB i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR Laptop N593UB i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X456UJ i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR VivoBook Laptop X456UV i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR X Series Laptop X756UB i7-6500U 14 nm SKYLAKE INTEL (R) PROCESSOR Desktop G11CB I7-6700 14 nm SKYLAKE INTEL (R) CORE (TM) I7 Desktop G11CD I7-6700 14 nm SKYLAKE INTEL (R) CORE (TM) I7 14 CDX-0005C.00014
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS ROG Desktop G20CB I7-6700 14 nm SKYLAKE INTEL (R) CORE (TM) I7 VivoPC Desktop M32CD I7-6700 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Mini PC GR8II i7-6700 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VL i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VM i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VS i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VT i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VY i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL502VM i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL502VS i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL502VT i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL502VY i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL552VW i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL552VX i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL553VW i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL702VM i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GL752VW i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ZenBook Laptop N501VW i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 VivoBook Laptop N551VW i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 VivoBook Laptop N552VW i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 VivoBook Laptop N552VX i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 X Series Laptop X550VX i7-6700HQ 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Desktop GT51CA I7-6700K 14 nm SKYLAKE INTEL (R) CORE (TM) I7 Zen AiO AIO Z240IC I7-6700T 14 nm SKYLAKE INTEL (R) CORE (TM) I7 VivoMini Mini PC VC65R i7-6700T 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G701VI i7-6820HK 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G701VO i7-6820HK 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VS i7-6820HK 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop G752VY i7-6820HK 14 nm SKYLAKE INTEL (R) CORE (TM) I7 ROG Laptop GX700VO i7-6820HK 14 nm SKYLAKE INTEL (R) CORE (TM) I7 Chromebook Laptop C302CA m3-6Y30 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX305CA m3-6Y30 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX360CA m3-6Y30 14 nm SKYLAKE INTEL (R) PROCESSOR Chromebook Laptop C302CA m5-6Y54 14 nm SKYLAKE INTEL (R) CORE (TM) M Chromebook Laptop C302CA m7-6Y75 14 nm SKYLAKE INTEL (R) PROCESSOR ZenBook Laptop UX305CA m7-6Y75 14 nm SKYLAKE INTEL (R) PROCESSOR VivoMini Mini PC VC66 Pentium G4400 14 nm SKYLAKE INTEL(R) PENTIUM(R) ASUSPRO Desktop E520 Pentium G4400T 14 nm SKYLAKE INTEL(R) PENTIUM(R) 15 CDX-0005C.00015
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS VivoMini Mini PC VC65R Pentium G4400T 14 nm SKYLAKE INTEL(R) PENTIUM(R) PE200U Motherboard PE200U i3-8145U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I3 ZenBook Laptop UX331FN i5-8265U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX333FA i5-8265U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX433FA i5-8265U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX431FA i5-8265U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX533FN i5-8265U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop X530FA i5-8265U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I5 Vivo AiO AIO V241FA i5-8265U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I5 PE200U Motherboard PE200U i5-8265U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I5 ZenBook Laptop UX331FAL i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX362FA i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX433FA i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX433FN i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX461FA i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX461FN i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX533FD i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX562FD i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX391FA i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 ZenBook Laptop UX431FA i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 VivoBook Laptop X530FN i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 Laptop X705FD i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 Laptop X705FN i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 PE200U Motherboard PE200U i7-8565U 14 nm WHISKEY LAKE INTEL(R) CORE(TM) I7 Laptop X330FA/FN i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X330FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X403FA i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X409FA/FB/FJ/FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X412FA/FJ i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X412FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X420FA i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X430FA/FN i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X432FA/FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop TP412FA i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX431FA/FN i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X509FA/FB/FJ/FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X512FA/FB i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X530FN/FA i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple 16 CDX-0005C.00016
ASUS PRODUCT NAME PRODUCT TYPE ASUS MODEL NAME CPU PROCESS NODE ARCHITECTURE BRAND ASUS Laptop X531FA/FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X532FA/FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X705FD/FN i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop X712FA/FB i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX391FA i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX392FA/FN i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX362FA i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX562FA i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX562FDX i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX334FA/FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX434FA/FL i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop UX534FA/FT i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple AIO V241FA/FF i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop B9440FAV i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop L524FA/FB i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop P3540FA/FB i7-8565U/i5-8265U/i3-8145U/5405U 14 nm WHISKEY LAKE Multiple Laptop GL12CX i9-9900K/i7-9700K/i5-9400/i5-9400F 14 nm COFFEE LAKE Multiple Laptop GL10CS i9-9900K/i7-9700K/i5-9400/i5-9400F 14 nm COFFEE LAKE Multiple Laptop G21CN i9-9900K/i7-9700K/i5-9400/i5-9400F 14 nm COFFEE LAKE Multiple Laptop G21CX i9-9900K/i7-9700K/i5-9400/i5-9400F 14 nm COFFEE LAKE Multiple 17 CDX-0005C.00017
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor 80V4000GUS Notebook YG 710-14IKB I5 8G 256 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80V40023US Notebook YG 710-14IKB I7 8G 256 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80V4008FUS Notebook YG 710-14IKB I7 8G 256 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WKCTO1WW ASSEMBLY Lenovo Y520-15IKBN Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK0165US Notebook LN Y520-15IKBN I7 8G 2T 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00F9US Notebook LN Y520-15IKBN I7 16 2T 256 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK001KUS Notebook LN Y520-15IKBN I7 16 2T 256 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00FHUS Notebook LN Y520-15IKBN I5 8G 256G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00HTUS Notebook LN Y520-15IKBN I5 16 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00CCUS Notebook LN Y520-15IKBN I7 16 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK01HEUS Notebook LN Y520-15IKBN I7 16G 1T128G10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK001LUS Notebook LN Y520-15IKBN I5 8G 1T 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80WK01F2US Notebook LN Y520-15IKBN I5 8G 256G 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80WK001JUS Notebook LN Y520-15IKBN I7 8G 1T 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80WK001MUS Notebook LN Y520-15IKBN I7 16 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00G5US Notebook LN Y520-15IKBN I7 16 1T 256 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00T2US Notebook LN Y520-15IKBN I7 8G 1T 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00T3US Notebook LN Y520-15IKBN I7 16 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00HSUS Notebook LN Y520-15IKBN I7 8G 256G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WKX005US 80WK00F9US S&D MTM Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80WK00MRCF Notebook LN Y520-15IKBN I5 8G 1T 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80WK00MTCF Notebook LN Y520-15IKBN I7 16 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WKX003US 80WK00F9US REFURB MTM Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WK00FCUS Notebook LN Y520-15IKBN I7 8G 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WY0000US Notebook LN Y520-15IKBA I5 8G 1T 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80WY000NUS Notebook LN Y520-15IKBA I7 8G 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WYCTO1WW ASSEMBLY Lenovo Y520-15IKBA Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WY001TCF Notebook LN Y520-15IKBA I7 8G 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80WY001SCF Notebook LN Y520-15IKBA I5 8G 1T 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80X4000WUS Notebook IP 320S-14IKB I5 8G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80X400EJUS Notebook IP 320S-14IKB I3 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80X400EHUS Notebook IP 320S-14IKB I5 8G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80X40094US Notebook IP 320S-14IKB I3 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80X40072US Notebook IP 320S-14IKB I5 8G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80X40093US Notebook IP 320S-14IKB I5 8G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80X5005DUS Notebook IP 320S-15IKB I5 8G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80X5005EUS Notebook IP 320S-15IKB I7 8G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X50002US Notebook IP 320S-15IKB I7 8G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X50003US Notebook IP 320S-15IKB I5 8G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80X50001US Notebook IP 320S-15IKB I7 8G 512G 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X50041US Notebook IP 320S-15IKB I7 8G 256G 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7008JUS Notebook YG 720-15IKB I7 8G 8G 1TB 10P Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7001WUS Notebook YG 720-15IKB I7 8G 256G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7003VUS Notebook YG 720-15IKB I7 8G 8G 1TB 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7008HUS Notebook YG 720-15IKB I5 8G 256G 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80X7006KUS Notebook YG 720-15IKB I7 8G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7006NUS Notebook YG 720-15IKB I7 8G 8G 512G 10P Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7001TUS Notebook YG 720-15IKB I7 8G 256G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7001SUS Notebook YG 720-15IKB I7 8G 8G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X700CAUS Notebook YG 720-15IKB I7 8G 8G 256G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7001UUS Notebook YG 720-15IKB I7 8G 256G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X700C0US Notebook YG 720-15IKB I7 8G 8G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7008YCF Notebook YG 720-15IKB I7 8G 8G 1TB 10P Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7001VUS Notebook YG 720-15IKB I7 8G 8G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80X7005PCF Notebook YG 720-15IKB I7 8G 8G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 LENOVO 1 CDX-0006C.0001 CDX-0006C
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor LENOVO 80X7009XCF Notebook YG 720-15IKB I7 8G 8G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA000YUS Notebook IP FLEX 5-1470 I5 8G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA0015US Notebook IP FLEX 5-1470 4415U 4G 1T 10H Notebook 4415U 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) 80XA0002US Notebook IP FLEX 5-1470 I3 4G 500 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XA0011US Notebook IP FLEX 5-1470 I7 16G1T128G10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA0009US Notebook IP FLEX 5-1470 I7 16G 1T 128G 1 Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA000EUS Notebook IP FLEX 5-1470 I5 16G 1T 256G 1 Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA000UUS Notebook IP FLEX 5-1470 I7 8G 256G 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA000AUS Notebook IP FLEX 5-1470 I7 8G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA0007US Notebook IP FLEX 5-1470 I5 8G 128G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA000TUS Notebook IP FLEX 5-1470 I5 8G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA0000US Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA000VUS Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA0006US Notebook IP FLEX 5-1470 I7 8G 256G 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA000DUS Notebook IP FLEX 5-1470 I7 16G 1T 512G 1 Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA0001US Notebook IP FLEX 5-1470 I5 8G 128G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA000PUS Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA000KUS Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA000CUS Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA000QCF Notebook IP FLEX 5-1470 I7 16G1T128G 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA000LCF Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA000SCF Notebook IP FLEX 5-1470 I7 8G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XA0010CF Notebook IP FLEX 5-1470 I5 8G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XA0014US Notebook IP FLEX 5-1470 4415U 4G 1T 10H Notebook 4415U 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) 80XL03RKUS Notebook IP 320-15IKB I7 16G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XL035SUS Notebook IP 320-15IKB I3 4G 500 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XL035WUS Notebook IP 320-15IKB I7 4G 4G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XL035UUS Notebook IP 320-15IKB I5 8G 4G 256G 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XL003HUS Notebook IP 320-15IKB I3 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XL0006US Notebook IP 320-15IKB I5 4G 4G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XL000FUS Notebook IP 320-15IKB I7 16G 2T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XL03HYUS Notebook IP 320-15IKB I7 4G 4G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XL03CCUS Notebook IP 320-15IKB I3 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XL03CBUS Notebook IP 320-15IKB I5 4G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XL03JBUS Notebook IP 320-15IKB I7 16G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XL03J1US Notebook IP 320-15IKB I7 16G 2T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XL03BQUS Notebook IP 320-15IKB I7 8G 4G 256G 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XL0005US Notebook IP 320-15IKB I3 2G 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XL02MRCF Notebook IP 320-15IKB I5 4G 4G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XL039KCF Notebook IP 320-15IKB I7 4G 4G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XL039JCF Notebook IP 320-15IKB I3 4G 500 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XL03J0US Notebook IP 320-15IKB I3 4G 500 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XL03MEUS Notebook IP 320-15IKB I7 16G 2T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XM00E6US Notebook IP 320-17IKB I5 4G 4G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XM00JJUS Notebook IP 320-17IKB I3 4G 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XM00CAUS Notebook IP 320-17IKB I7 4G 4G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XM00JLUS Notebook IP 320-17IKB I7 4G 4G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XM0000US Notebook IP 320-17IKB I5 4G 4G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XM0002US Notebook IP 320-17IKB I7 16G 2T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XM0006US Notebook IP 320-17IKB I7 16G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XM00F0US Notebook IP 320-17IKB I3 4G 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XM00GRUS Notebook IP 320-17IKB I5 4G 4G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XM0001US Notebook IP 320-17IKB I3 2G 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XM0008US Notebook IP 320-17IKB I5 4G 4G 1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XM00CECF Notebook IP 320-17IKB I7 4G 4G 1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 2 CDX-0006C.0002
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor LENOVO 80XM0098CF Notebook IP 320-17IKB I3 2G 4G 1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XN000AUS Notebook IP 320-15IKB TOUCH I32G4G1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XN0002US Notebook IP 320-15IKB TOUCH I7 16G2T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XN0009US Notebook IP 320-15IKB TOUCH I58G4G1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XN000MUS Notebook IP 320-15IKB TOUCH I7 4G 4G 1T Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XN0008US Notebook IP 320-15IKB TOUCH I78G4G1T 10H Notebook i7-7500U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80XN0003US Notebook IP 320-15IKB TOUCH I54G4G1T 10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XN0004US Notebook IP 320-15IKB TOUCH I32G4G1T 10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XN000CCF Notebook IP 320-15IKB TOUCH I5 4G4G1T10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XN000BCF Notebook IP 320-15IKB TOUCH I3 2G4G1T10H Notebook i3-7100U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 80XN000DCF Notebook IP 320-15IKB TOUCH I5 8G4G1T10H Notebook i5-7200U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80XR017EUS Notebook IP 320-15IAP N3450 4G 500 10H Notebook N3450 1273 14nm APOLLO LAKE INTEL(R) CELERON® 80XR00A7US Notebook IP 320-15IAP N4200 4G 1T 10H Notebook N4200 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) 80XR017DUS Notebook IP 320-15IAP N4200 4G 1T 10H Notebook N4200 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) 80XR00AGUS Notebook IP 320-15IAP N3350 4G 1T 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 80XR017FUS Notebook IP 320-15IAP N4200 4G 1T 10H Notebook N4200 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) 80XR00AKUS Notebook IP 320-15IAP N3350 4G 1T 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 80XR00AJUS Notebook IP 320-15IAP N3350 4G 1T 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 80XR00AMUS Notebook IP 320-15IAP N4200 4G 1T 10H Notebook N4200 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) 80XR00AHUS Notebook IP 320-15IAP N3350 4G 1T 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 80XR00WHUS Notebook IP 320-15IAP N3350 4G 1T 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 80XR00WGUS Notebook IP 320-15IAP N4200 4G 1T 10H Notebook N4200 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) 80XR00ALUS Notebook IP 320-15IAP N4200 4G 1T 10H Notebook N4200 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) 80XR00ANUS Notebook IP 320-15IAP N4200 4G 1T 10H Notebook N4200 1273 14nm APOLLO LAKE INTEL(R) PENTIUM(R) 80Y7CTO1WW ASSEMBLY Lenovo YOGA 920-13IKB Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y70063US Notebook YG 920-13IKB I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 80Y70062US Notebook YG 920-13IKB I7 16G 1TB 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y70064US Notebook YG 920-13IKB I7 8G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y70066US Notebook YG 920-13IKB I7 16G 1TB 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y70010US Notebook YG 920-13IKB I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y7000WUS Notebook YG 920-13IKB I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y70074US Notebook YG 920-13IKB I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y7002SUS Notebook YG 920-13IKB I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y70012US Notebook YG 920-13IKB I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y700FNUS Notebook YG 920-13IKB I7 16G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y7006JCF Notebook YG 920-13IKB I7 8G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y8CTO1WW ASSEMBLY Lenovo YOGA 920-13IKB Glass Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y8000UUS Notebook YG 920 Glass I7 16G 1TB 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80Y8S00000 Yoga 920 SW Glass-BBY Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YYCTO1WW ASSEMBLY Lenovo Y520-15IKBM Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YY0060US Notebook LN Y520-15IKBM I7 16 2T 256 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YY003PUS Notebook LN Y520-15IKBM I7 8G 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YY009PUS Notebook LN Y520-15IKBM I7 16G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YY009NUS Notebook LN Y520-15IKBM I7 8G 1T 128G10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YY0074US Notebook LN Y520-15IKBM I7 16G 256G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YY0009US Notebook LN Y520-15IKBM I7 16 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YY0090US Notebook LN Y520-15IKBM I7 8G 1T 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YY003TCF Notebook LN Y520-15IKBM I7 8G 1T 128 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YYX005US 80YY0074US REFURB MTM Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 80YYX006US 80YY0074US S&D MTM Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81A400BFUS Notebook IP 120S-11IAP N3350 2G 64 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 81A400BGUS Notebook IP 120S-11IAP N3350 2G 64 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 81A40025US Notebook IP 120S-11IAP N3350 2G 32 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 81A5006SUS Notebook IP 120S-14IAP N3350 4G 64 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 81A5001UUS Notebook IP 120S-14IAP N3350 2G 32 10H Notebook N3350 1273 14nm APOLLO LAKE INTEL(R) CELERON(R) 3 CDX-0006C.0003
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor LENOVO 81A70001US Notebook IP FLEX 6-11IGM N5000 4G128 10H Notebook N5000 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER 81A70006US Notebook IP FLEX 6-11IGM N5000 4G 64 10S Notebook N5000 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER 81A70002US Notebook IP FLEX 6-11IGM N4000 2G 64 10H Notebook N4000 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) 81A70005US NB IP FLEX 6-11IGM N4000 4G 64 10S Notebook N4000 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) 81A7000AUS Notebook IP FLEX 6-11IGM N5000 4G 64 10S Notebook N5000 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER 81A7000BUS NB IP FLEX 6-11IGM N5000 4G 64 10S Notebook N5000 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER 81AC0006US Notebook IP 720S-15IKB I7 8G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81AC0008US Notebook IP 720S-15IKB I5 8G 256G 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81AC003EUS Notebook IP 720S-15IKB I5 8G 256G 10P Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81AC002KUS Notebook IP 720S-15IKB I7 8G 512G 10P Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81AC0003US Notebook IP 720S-15IKB I5 8G 256G 10H Notebook i5-7300HQ 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BD001NUS Notebook IP 720S-14IKB I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BD001QUS Notebook IP 720S-14IKB I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BD001PUS Notebook IP 720S-14IKB I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BD000TUS Notebook IP 720S-14IKB I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BD000SUS Notebook IP 720S-14IKB I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BF001JUS Notebook IP 520-15IKB I5 4G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BF001KUS Notebook IP 520-15IKB I7 16G 1T 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BF00A1US Notebook IP 520-15IKB I5 8G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BG008AUS Notebook IP 320-15IKB I5 4G 4G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BG001AUS Notebook IP 320-15IKB I5 4G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BH0001US Notebook IP 320-15IKB Touch I58G4G1T10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BH0000US Notebook IP 320-15IKB Touch I7 8G4G1T10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BH0003US Notebook IP 320-15IKB TouchI54G4G1T10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BHX001US 81BH0000US REFURB MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BHX003US 81BH0000US S&D MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BHX002US 81BH0001US REFURB MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BJ0006US Notebook IP 320-17IKB I7 16G 1T 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BL009GUS Notebook IP 520S-14IKB I5 8G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BL009EUS Notebook IP 520S-14IKB I7 8G 1T 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BL009FUS Notebook IP 520S-14IKB I7 8G 1T 128G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BL00CUUS Notebook IP 520S-14IKB I5 8G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BN000AUS Notebook IP 320S-14IKB I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BQ000EUS Notebook IP 320S-15IKB I5 8G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BQ000DUS Notebook IP 320S-15IKB I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BV002FUS Notebook IP 720S-13IKB I7 8G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BV002GUS Notebook IP 720S-13IKB I7 8G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BV002HUS Notebook IP 720S-13IKB I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BV002EUS Notebook IP 720S-13IKB I7 8G 1TB 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BV008KUS Notebook IP 720S-13IKB I7 8G 1TB 10P Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81BV008FUS Notebook IP 720S-13IKB I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81BV002CUS Notebook IP 720S-13IKB I7 8G 1TB 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C3005RUS Notebook YG 720-13IKB I7 8G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C3005QUS Notebook YG 720-13IKB I7 16G 1TB 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C3005PUS Notebook YG 720-13IKB I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C3005SUS Notebook YG 720-13IKB I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81C3000LUS Notebook YG 720-13IKB I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81C300C6US Notebook YG 720-13IKB I7 16G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C9000EUS Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81C90004US Notebook IP FLEX 5-1470 I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C90009US Notebook IP FLEX 5-1470 I5 8G 128G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81C9000CUS Notebook IP FLEX 5-1470 I5 8G 128G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81C9000FUS Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81C9000JUS Notebook IP FLEX 5-1470 I7 8G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C9000HUS Notebook IP FLEX 5-1470 I7 16G1T512G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 4 CDX-0006C.0004
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor LENOVO 81C9000GUS Notebook IP FLEX 5-1470 I7 16G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C9000DUS Notebook IP FLEX 5-1470 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81C9000KUS Notebook IP FLEX 5-1470 I7 16G1T256G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81C9X002US 81C9000EUS S&D MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81C9X001US 81C9000EUS REFURB MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA000GUS Notebook IP FLEX 5-1570 I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA000JUS Notebook IP FLEX 5-1570 I5 8G 500 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA000HUS Notebook IP FLEX 5-1570 I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA001QUS Notebook IP FLEX 5-1570 I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA000KUS Notebook IP FLEX 5-1570 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA000CUS Notebook IP FLEX 5-1570 I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA000PUS Notebook IP FLEX 5-1570 I58G1T256G10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA0008US Notebook IP FLEX 5-1570 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA000UUS Notebook IP FLEX 5-1570 I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA000BUS Notebook IP FLEX 5-1570 I7 16G1T256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA001RUS Notebook IP FLEX 5-1570 I3 8G 128G 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81CA001SUS Notebook IP FLEX 5-1570 I7 8G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA0013US Notebook IP FLEX 5-1570 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA000RUS Notebook IP FLEX 5-1570 I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA0017US Notebook IP FLEX 5-1570 I7 16G1T512G10P Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA000XUS Notebook IP FLEX 5-1570 I7 16G1T256G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA001KUS Notebook IP FLEX 5-1570 I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA001TUS Notebook IP FLEX 5-1570 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA000DUS Notebook IP FLEX 5-1570 I7 16G1T256G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA0009US Notebook IP FLEX 5-1570 I5 8G 1T128G10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA000TUS Notebook IP FLEX 5-1570 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA000AUS Notebook IP FLEX 5-1570 I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA000VUS Notebook IP FLEX 5-1570 I7 16G1T256G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA0007US Notebook IP FLEX 5-1570 I5 8G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA0001US Notebook IP FLEX 5-1570 I7 16G 1T256G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA000YUS Notebook IP FLEX 5-1570 I7 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA0010US Notebook IP FLEX 5-1570 I5 8G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA0000US Notebook IP FLEX 5-1570 I5 8G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CAX018US 81CA000RUS REFURB MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA0018US Notebook IP FLEX 5-1570 I7 16G 512G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CAX022US 81CA000RUS S&D MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA0016US Notebook IP FLEX 5-1570 I7 16G1T256G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CAX006US 81CA000JUS REFURB MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CAX037US 81CA001KUS REFURB MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CAX039US 81CA001KUS S&D MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CAX032US 81CA000XUS REFURB MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CAX028US 81CA0017US REFURB MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CAX034US 81CA000XUS S&D MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CAX038US 81CA001TUS REFURB MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CAX040US 81CA001TUS S&D MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81CA0011US Notebook IP FLEX 5-1570 I7 16G1T256G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CA000FUS Notebook IP FLEX 5-1570 I7 8G 256G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CR0005US Notebook IP 720S T-15IKB I7 16G 1TB 10P Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CR0006US Notebook IP 720S T-15IKB I7 16G 512G 10P Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CR0002US Notebook IP 720S T-15IKB I7 16G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CR0007US Notebook IP 720S T-15IKB I7 16G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CR0003US Notebook IP 720S T-15IKB I7 16G 1TB 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81CR0004US Notebook IP 720S T-15IKB I7 16G 512G 10H Notebook i7-7700HQ 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DE01M2US Notebook IP 330-15IKB I5 4G 4G 1T 16G10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DE01KRUS Notebook IP 330-15IKB I3 4G 1T 16G 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 5 CDX-0006C.0005
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor LENOVO 81DE0085US Notebook IP 330-15IKB I3 4G 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE017BUS Notebook IP 330-15IKB I3 4G 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE0044US Notebook IP 330-15IKB I3 2G 4G 1T 10H Notebook i3-7020U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE0045US Notebook IP 330-15IKB I5 4G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DE01P3US Notebook IP 330-15IKB I3 2G 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE0026US Notebook IP 330-15IKB I3 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE0025US Notebook IP 330-15IKB I7 16G 1T 16G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DE00L8US Notebook IP 330-15IKB I3 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE00LAUS Notebook IP 330-15IKB I3 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE00T1US Notebook IP 330-15IKB I3 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE00LBUS Notebook IP 330-15IKB I5 4G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DE00T0US Notebook IP 330-15IKB I3 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE00L0US Notebook IP 330-15IKB I5 4G 4G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DE00LCUS Notebook IP 330-15IKB I3 4G 4G 128G 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DE0043US Notebook IP 330-15IKB I7 8G 4G 1T 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DE01THUS Notebook IP 330-15IKB I5 4G 4G 256G 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DE0029US Notebook IP 330-15IKB I5 4G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DJ0007US Notebook IP 330-15IKB Touch I3 2G4G1T10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DJ0006US Notebook IP 330-15IKB Touch I5 8G4G1T10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DJ0002US Notebook IP 330-15IKB Touch I5 8G4G1T10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DJ0004US Notebook IP 330-15IKB Touch I7 8G4G1T10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DJ0000US Notebook IP 330-15IKB Touch I7 16G 1T10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DJ0003US Notebook IP 330-15IKB Touch I5 4G4G1T10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DJ000AUS Notebook IP 330-15IKB Touch I3 4G4G2T10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DJ0009CF Notebook IP 330-15IKB Touch I5 8G4G1T10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DJ0008US Notebook IP 330-15IKB TouchI716G1T16G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DJX003US 81DJ0002US S&D MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DJX009US 81DJ0004US REFURB MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DJX001US 81DJ0002US REFURB MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DJX010US 81DJ0004US S&D MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DJ000CUS Notebook IP 330-15IKB TouchI716G1T16G10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DJ000DUS Notebook IP 330-15IKB Touch I5 4G4G1T10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DK003UUS Notebook IP 330-17IKB I3 2G 4G 2T 10H Notebook I3-7020U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DM0002US Notebook IP 330-17IKB I3 2G 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DM001UUS Notebook IP 330-17IKB I5 4G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DM000LUS Notebook IP 330-17IKB I5 8G 4G 2T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DM000MUS Notebook IP 330-17IKB I3 2G 4G 2T 10H Notebook I3-7020U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DM000PUS Notebook IP 330-17IKB I7 8G 4G 2T 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DM008MUS Notebook IP 330-17IKB I3 2G 4G 2T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DM0004US Notebook IP 330-17IKB I5 8G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81DM0005US Notebook IP 330-17IKB I7 16G 1T 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DM0007US Notebook IP 330-17IKB I7 8G 4G 1T 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DM004VCF Notebook IP 330-17IKB I3 2G 4G 1T 10H Notebook i3-8130U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81DM0001US Notebook IP 330-17IKB I7 16G 1T 16G 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DMX009US 81DM0005US REFURB MTM Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81DMX007US 81DM0004US REFURB MTM Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81FK009UUS Notebook IP 330-15ICH I7 8G 4G 1T 16G10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FK0002US Notebook IP 330-15ICH I5 4G 4G 1T 10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81FK0008US Notebook IP 330-15ICH I7 16G 1T 128G 10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FK0007US Notebook IP 330-15ICH I7 8G 4G 1T 10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FK0000US Notebook IP 330-15ICH I5 4G 4G 1T 10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81FK0001US Notebook IP 330-15ICH I7 16G 1T 10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FK009VUS Notebook IP 330-15ICH I5 4G 4G 1T 16G10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81FK009TUS Notebook IP 330-15ICH I7 16G 1T 16G 10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FK00ECUS Notebook IP 330-15ICH I5 4G 4G 1T128G10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 6 CDX-0006C.0006
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor LENOVO 81FK00DBUS Notebook IP 330-15ICH I5 4G 4G 2T 10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81FL006FUS Notebook IP 330-17ICH I7 8G 4G 1T 16G10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FL0003US Notebook IP 330-17ICH I5 4G 4G 1T 10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81FL0004US Notebook IP 330-17ICH I7 16G 1T 128G 10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FL0005US Notebook IP 330-17ICH I7 8G 4G 1T 10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FL0066US Notebook IP 330-17ICH I7 8G 4G 1T 16G10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FL0095US Notebook IP 330-17ICH I7 8G 4G 1T 16G10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FL0000US Notebook IP 330-17ICH I7 16G 1T 10H Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81FL0002US Notebook IP 330-17ICH I5 4G 4G 1T 10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81FL0001US Notebook IP 330-17ICH I5 4G 4G 1T 10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81FLX007US 81FL0066US REFURB MTM Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81G20086US Notebook IP 330-14IKB I3 4G 4G 1T 10H Notebook i3-7020U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 81G20085US Notebook IP 330-14IKB I5 4G 4G 1T 10H Notebook i5-8250U 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 81G20084US Notebook IP 330-14IKB I7 8G 4G 1T 10H Notebook i7-8550U 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 81HD0003US Notebook LN LegionY730-15ICHI716G1T12810 Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81HD000NUS Notebook LN LegionY730-15ICHI58G1T16G10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81HD000PUS Notebook LN LegionY730-15ICHI716G2T25610 Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81HDCTO1WW ASSEMBLY Lenovo Legion Y730-15ICH Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81HD001SUS Notebook LN LegionY730-15ICHI58G1T16G10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81HD001TUS Notebook LN LegionY730-15ICHI516G1T25610 Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81HG0004US Notebook LN LegionY730-17ICHI716G1T12810 Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81HGCTO1WW ASSEMBLY Lenovo Legion Y730-17ICH Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81HG001PUS Notebook LN LegionY730-17ICHI716G1T25610 Notebook i7-8750H 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 81HG000TUS Notebook LN LegionY730-17ICHI58G1T16G10H Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81HG001HUS Notebook LN LegionY730-17ICHI516G1T12810 Notebook i5-8300H 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 81SQ000BUS NB IP FLEX-14IWL I5 4G 4G 512G 10H Notebook i5-8265U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I5 81SQ0001US NB IP FLEX-14IWL I5 4G 4G 512G 10H Notebook i5-8265U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I5 81SQ0003US Notebook IP FLEX-14IWL I7 4G 4G 512G 10H Notebook i7-8565U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 81SQ0008US Notebook IP FLEX-14IWL I7 16G 512G 10H Notebook i7-8565U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 81SQ0000US NB IP FLEX-14IWL I5 4G 4G 256G 10H Notebook i5-8265U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I5 81SQ000MUS Notebook IP FLEX-14IWL I7 4G 4G 256G 10H Notebook i7-8565U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 81SR000BUS Notebook IP FLEX-15IWL I7 4G 4G 512G 10H Notebook i7-8565U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 81SR000FUS Notebook IP FLEX-15IWL I7 16G1TB512G10H Notebook i7-8565U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 81SR000DUS Notebook IP FLEX-15IWL I7 16G 512G 10H Notebook i7-8565U 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 4XG0G89074 CPU_BO LTS RD350 XEON E5-2630 V4 SERVER Option 1272 14nm BROADWELL INTEL(R)XEON(R) 4XG0G89078 CPU_BO LTS TD350 XEON E5-2620 V4 SERVER Option 1272 14nm BROADWELL INTEL(R)XEON(R) 4XG0G89079 CPU_BO LTS RD350 XEON E5-2620 V4 SERVER Option 1272 14nm BROADWELL INTEL(R)XEON(R) 4XG0G89080 CPU_BO LTS RD450 XEON E5-2620 V4 SERVER Option 1272 14nm BROADWELL INTEL(R)XEON(R) 4XG0G89090 CPU_BO LTS RD450 XEON E5-2603 V4 SERVER Option 1272 14nm BROADWELL INTEL(R)XEON(R) 4XG0G89093 CPU_BO LTS TD350 Xeon E5-2623 v4 SERVER Option 1272 14nm BROADWELL INTEL(R)XEON(R) 4XG0G89094 CPU_BO LTS RD350 Xeon E5-2623 v4 SERVER Option 1272 14nm BROADWELL INTEL(R)XEON(R) 70TT0025UX SERVER TS TS460 E31240V6 RAID520I Enterprise Product Group 1272 14nm KABY LAKE INTEL(R)XEON(R) 70TE0011UX Server TS RS160 E31240V6 121i SRV 1272 14nm KABY LAKE INTEL(R)XEON(R) 70TG001SUX Server TS RS160 E31230V6 121i SRV 1272 14nm KABY LAKE INTEL(R)XEON(R) 70TT0020UX Server TS TS460 E31230V6 121i Enterprise Product Group 1272 14nm KABY LAKE INTEL(R)XEON(R) 70UB000AUX Server TS TS150 E31225V6 121i Enterprise Product Group 1272 14nm KABY LAKE INTEL(R)XEON(R) 7X02CTO1WW ThinkSystem SR630 - 3yr Warranty SRV 1272 14nm SKYLAKE INTEL(R) XEON(R) PLATINUM 9532EOU Flex System x240 M5 Compute Node SRV 1272 14nm BROADWELL INTEL(R)XEON(R) 3633KTU LENOVO SYSTEM X3250 M6 E3-1270 M1215 SRV 1272 14nm KABY LAKE INTEL(R)XEON(R) 3633KSU LENOVO SYSTEM X3250 M6 E3-1240 M1215 SRV 1272 14nm KABY LAKE INTEL(R)XEON(R) 7Y46CTO1WW ThinkSystem ST250 - 1yr Warranty ThinkSystem 1272 14nm COFFEE LAKE INTEL(R)XEON(R) 7X83XV1T00 Lenovo ThinkAgile HX3320 6148x2.0 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X06TD3800 ThinkSystem SR650 6140x2 32GBx24 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7Y94S0MR00 ThinkAgile VX 2U Node 6130x2 64GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X02S4C400 ThinkSystem SR630 6130x2 32GBx24 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7 CDX-0006C.0007
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor LENOVO 7X83S0R800 Lenovo ThinkAgile HX3320 5120x2 16GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X02S6F200 ThinkSystem SR630 5120x2 32GBx8 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7XG7A05536 SR630 Xeon 5118 12C/105W/2.3GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X06A05XNA ThinkSystem SR650 5118 32G ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X10100QNA ThinkSystem ST550 4110 32GB ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7Y37S06K00 ThinkSystem SR670 5118x2 32GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X84S0WW00 Lenovo ThinkAgile HX7520 6150x2 64GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7Y37S29S00 ThinkSystem SR670 6142x2.0 32GBx12.0 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X06XT7G00 ThinkSystem SR650 6136x2 16GBx24 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X83S1G000 Lenovo ThinkAgile HX3320 6136x2 32GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7XG7A05590 SR650 Xeon 6126 12C/125W/2.6GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X84S0CV00 Lenovo ThinkAgile HX5520 6126x2 16GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X06U1EB00 ThinkSystem SR650 6126x2 16GBx8 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X06A040NA ThinkSystem SR650 6134 32GB SRV 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X06TX5100 ThinkSystem SR650 6134x2 32GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7XG7A05605 SR650 Xeon 6134 8C/130W/3.2GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X02A01LNA ThinkSystem SR630 5115x1 16Gx1 SRV 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7XG7A05551 SR630 Xeon 5115 10C/85W/2.4GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) GOLD 7X02A04JNA ThinkSystem SR630 4116x1 32Gx1 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7XG7A05532 SR630 Xeon 4116 12C/85W/2.1GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X10A02PNA ThinkSystem ST550 4116 32GB ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4XG7A07212 ST550 Xeon Silver 4116 12C/85W/2.1GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4XG7A07227 SR570 Xeon 4116 12C/85W/2.1GHz DCG SERVER OPTIONS HIGH VOLUME 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X09CTO1WW Server SP: ThinkSystem ST550 - 1yr Warra Enterprise Product Group 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7Y89S0TM00 ThinkAgile HX1321 Node 4114 16GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X83S1GH00 Lenovo ThinkAgile HX3320 4114x2 16GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7Y89S0UN00 ThinkAgile HX1321 Node 4114 32GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X06UT8900 ThinkSystem SR650 4114x2 32GBx24 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X06TH0A00 ThinkSystem SR650 4114x2 16GBx4 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7XG7A05575 SR650 Xeon 4110 8C/85W/2.1GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X10A028NA ThinkSystem ST550 4110 16G ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7Y03A02BNA THINKSYSTEM SR570 SERVER 4110 16G ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X02A03UNA ThinkSystem SR630 4110x1 16Gx1 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4XG7A07215 ST550 Xeon Silver 4110 8C/85W/2.1GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X10100NNA ThinkSystem ST550 4110 16GB ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X99A03DNA ThinkSystem SR590 Server 4110 16G ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X04W9TE00 ThinkSystem SR550 4110x1.0 16GBx1.0 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X02T6BT00 ThinkSystem SR630 4110x2.0 16Gx4.0 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4XG7A07263 SR590 Xeon 4110 8C/85W/2.1GHz DCG SERVER OPTIONS HIGH VOLUME 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 4XG7A07195 SR550 Xeon 4110 8C/85W/2.1GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X04A04YNA ThinkSystem SR550 4110 16G ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7Y89S0RT00 HX2321 Node 3YR 4110x2 32GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X83S0D200 Lenovo ThinkAgile HX1320 4110 8GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X04A057NA ThinkSystem SR550 4110 16G ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7Y03S0CT00 ThinkSystem SR570 4110x2.0 16GBx2.0 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X08SGTE00 ThinkSystem SR530 4110 16GBx4 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X83S24T00 Lenovo ThinkAgile HX3320 4110x2 16GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X99T99U00 ThinkSystem SR590 4110 16GB ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X06TM7R00 ThinkSystem SR650 4110 16GBx12 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7X02S32N00 ThinkSystem SR630 4110x2 16GBx6 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) SILVER 7Y03A02JNA ThinkSystem SR570 Server 3106 16G ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) BRONZE 4XG7A07218 ST550 Xeon Bronze 3106 8C/85W/1.7GHz SERVER Option 1272 14nm SKYLAKE INTEL(R) XEON(R) BRONZE 7X08S3VG00 ThinkSystem SR530 3104x1.0 16Gx4.0 ThinkSystem 1272 14nm SKYLAKE INTEL(R) XEON(R) BRONZE 7Y46A002NA ThinkSystem ST250 E-2174G 8GB ThinkSystem 1272 14nm COFFEE LAKE INTEL(R)XEON(R) 7Y49A01CNA ThinkSystem ST50 Server E-2144G 8GB ThinkSystem 1272 14nm COFFEE LAKE INTEL(R)XEON(R) 8 CDX-0006C.0008
MATERIAL NUMBER PRODUCT DESCRIPTION PRODUCT TYPE PROCESSOR # PROCESS CODE PROCESS NODE Architecture Processor LENOVO 7Y46A019NA THINKSYSTEM ST250 E-2136 8GB ThinkSystem 1272 14nm COFFEE LAKE INTEL(R)XEON(R) 7Y51S0HB00 ThinkSystem SR250 E-2136 16GBx4 ThinkSystem 1272 14nm COFFEE LAKE INTEL(R)XEON(R) 7Y51S0PJ00 ThinkSystem SR250 E-2136 16GBx2 ThinkSystem 1272 14nm COFFEE LAKE INTEL(R)XEON(R) 7Y51S05E00 ThinkSystem SR250 E-2136 16GB ThinkSystem 1272 14nm COFFEE LAKE INTEL(R)XEON(R) 7Y49A013NA ThinkSystem ST50 Server E-2124G 8GB ThinkSystem 1272 14nm COFFEE LAKE INTEL(R)XEON(R) 9 CDX-0006C.0009
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND A0E-N305015-I06 942602 DUAL CORE N3050 911-7890-001 MB 1273 14nm BRASWELL INTEL(R) CELERON(R) A0F-N315015-I06 942600 QUAD CORE N3150 911-7890-103 MB 1273 14nm BRASWELL INTEL(R) CELERON(R) A0F-N316015-I06 947023 QUAD CORE N3160 911-7890-104 MB 1273 14nm BRASWELL INTEL(R) CELERON® A0E-N370015-I06 942599 QUAD CORE N3700 9S6-AC1611-025 AIO 1273 14nm BRASWELL INTEL(R) PENTIUM(R) A0E-N371015-I06 947020 QUAD CORE N3710 9S6-AC1611-029 AIO 1273 14nm BRASWELL INTEL(R) PENTIUM(R) A0E-N371015-I06 947020 QUAD CORE N3710 9S6-B12011-056 DT 1273 14nm BRASWELL INTEL(R) PENTIUM(R) A0E-N371015-I06 947020 QUAD CORE N3710 9S6-AE9211-018 AIO 1273 14nm BRASWELL INTEL(R) PENTIUM(R) A0F-N316015-I06 947023 QUAD CORE N3160 9S6-AC1611-024 AIO 1273 14nm BRASWELL INTEL(R) CELERON(R) A0F-N316015-I06 947023 QUAD CORE N3160 9S6-AA8B11-048 AIO 1273 14nm BRASWELL INTEL(R) CELERON(R) A0B-5010U15-I06 939363 DUAL CORE I3-5010U 939-9A69-002 Server BB 1272 14nm BROADWELL INTEL(R) CORE(TM) I3 A0E-G456000-I06 952994 DUAL CORE G4560 9S6-AAC111-021 AIO 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) A0B-5005U35-I06 940707 DUAL CORE i3-5005U 936-B09611-062 DT BB 1272 14nm BROADWELL INTEL(R) CORE(TM) I3 A0B-5005U35-I06 940707 DUAL CORE i3-5005U 936-B09612-004 DT BB 1272 14nm BROADWELL INTEL(R) CORE(TM) I3 A0D-5950H15-I06 943431 QUAD CORE i7-5950HQ 9S7-181212-263 NB 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 A0D-5500U15-I06 939360 DUAL CORE i7-5500U 9S6-B09611-251 DT 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 A13-2220125-I06 939362 DUAL CORE i5-5200U 9S6-B09611-225 DT 1272 14nm BROADWELL INTEL(R) CORE(TM) I5 A13-2220125-I06 939362 DUAL CORE i5-5200U 9S9-9A75-004 Server 1272 14nm BROADWELL INTEL(R) CORE(TM) I5 A13-2220125-I06 939362 DUAL CORE i5-5200U 939-9A75-003 Server BB 1272 14nm BROADWELL INTEL(R) CORE(TM) I5 A0D-5700H15-I06 943450 QUAD CORE i7-5700HQ 9S7-16J212-453 NB 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 A0D-5700H15-I06 943450 QUAD CORE i7-5700HQ 9S7-16H512-606 NB 1272 14nm BROADWELL INTEL (R) CORE (TM) I7 A0H-2176G00-I06 963450 6 CORE E-2176G 9S7-17A512-018 NB 1272 14nm COFFEE LAKE INTEL(R)XEON(R) A0H-2176M05-I06 963717 6 CORE E-2176M 9S7-17C532-293 NB 1272 14nm COFFEE LAKE INTEL(R)XEON(R) A0H-2176M05-I06 963717 6 CORE E-2176M 9S7-17C532-294 NB 1272 14nm COFFEE LAKE INTEL(R)XEON(R) A0H-2176M05-I06 963717 6 CORE E-2176M 9S7-17C632-200 NB 1272 14nm COFFEE LAKE INTEL(R)XEON(R) A0H-2176M05-I06 963717 6 CORE E-2176M 9S7-16P632-280 NB 1272 14nm COFFEE LAKE INTEL(R)XEON(R) A0K-9900K00-I06 983354 8 CORE i9-9900K 9S6-B92621-002 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-9900K00-I06 983354 8 CORE i9-9900K 9S6-B91641-270 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-9900K00-I06 983354 8 CORE i9-9900K 9S6-B92631-054 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-9900K00-I06 983354 8 CORE i9-9900K 9S6-B92631-251 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-9900K00-I06 983354 8 CORE i9-9900K 9S6-B92631-253 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-9900K00-I06 983354 8 CORE i9-9900K 9S6-B92631-062 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0C-8400000-I06 960619 6 CORE i5-8400 9S7-1T3111-023 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8400000-I06 960619 6 CORE i5-8400 9S6-B91531-459 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8400000-I06 960619 6 CORE i5-8400 9S6-B92011-005 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8400000-I06 960619 6 CORE i5-8400 9S6-B92011-225 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8400000-I06 960619 6 CORE i5-8400 9S6-B92011-236 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8600K00-I06 960620 6 CORE i5-8600K 9S6-B91314-067 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8600K00-I06 960620 6 CORE i5-8600K 9S6-B91314-234 DT 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-1T3111-022 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-1T3131-060 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-1T3131-061 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-1T3131-059 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-1T3131-080 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 MSI 1 CDX-0007C CDX-0007C.0001
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-8700000-I06 960618 6 CORE i7-8700 9S7-1T3111-215 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-1T3131-208 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B90721-230 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92011-003 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91621-208 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91621-204 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91531-242 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 936-B92011-012 DT BB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 936-B92011-009 DT BB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92011-238 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91621-201 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B90721-223 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92012-002 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91531-457 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92011-004 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91621-040 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B90721-224 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91621-097 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B90721-232 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92011-202 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92011-237 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91531-458 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-17A512-005 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-17A512-008 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-17A512-007 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-17A512-006 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91711-030 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-091 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91621-095 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91611-007 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91621-093 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91711-027 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-069 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-084 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-086 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91621-094 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-074 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91711-068 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91611-006 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-085 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91711-028 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91711-065 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-233 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 2 CDX-0007C.0002
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-062 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91711-036 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-073 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92011-001 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91314-204 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 936-B92011-010 DT BB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91621-039 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B90721-233 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-16Q211-278 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-16Q211-287 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92621-021 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92621-003 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91611-008 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91711-029 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-13S NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-12S NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-09S NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-14S NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-17A311-267 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-17A311-269 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16Q211-276 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16Q211-274 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16JF42-200 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16R112-409 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16R112-249 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-17C612-239 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-16Q211-279 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-16Q211-286 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A311-08S NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-17C612-201 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A311-07S NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-446 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-664 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-077 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16JE32-016 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16JE32-057 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16JE32-061 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-499 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-444 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-069 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-627 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-657 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16R112-223 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 3 CDX-0007C.0003
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-221 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P732-209 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-17C722-028 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16JF42-042 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16JF42-260 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16JF42-275 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16R112-065 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16P612-071 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8300H05-I06 963720 QUAD CORE i5-8300H 9S7-16R312-030 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8400H05-I06 963721 QUAD CORE i5-8400H 9S7-16Q211-275 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8400H05-I06 963721 QUAD CORE i5-8400H 9S7-17A311-268 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8400H05-I06 963721 QUAD CORE i5-8400H 9S7-17A311-266 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0C-8400H05-I06 963721 QUAD CORE i5-8400H 9S7-16Q211-273 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17E112-055 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-418 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-412 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-282 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-031 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-421 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C512-012 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C512-676 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C512-456 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C512-641 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-803 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-077 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-439 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-602 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-609 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-017 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-024 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-030 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-056 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-055 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K622-018 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-448 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-456 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-663 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-012 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-011 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-605 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-013 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-438 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16L411-047 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 4 CDX-0007C.0004
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16L411-048 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q312-020 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-067 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-809 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-447 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-066 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-210 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-448 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-805 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-413 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-032 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-425 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16L411-046 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16L411-052 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K622-019 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K622-046 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K622-045 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-179E33-007 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17B512-045 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17B512-012 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P622-626 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P622-033 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P622-485 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P622-041 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P622-807 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-053 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-405 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-068 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-054 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-037 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-406 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-283 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-268 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-245 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-259 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q213-450 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q213-441 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q312-073 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q312-021 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JE32-015 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JE32-056 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-603 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-493 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 5 CDX-0007C.0005
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-672 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-447 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-025 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-010 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-626 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-609 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-014 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-179F43-011 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q213-442 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-16L411-061 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-181612-014 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-181612-027 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-181612-016 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-17A311-057 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-17A311-056 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-17A311-275 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-17A311-273 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-16K731-040 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-16K631-034 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-16K731-039 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-428 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JF42-035 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C632-077 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C632-281 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C632-078 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-243 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-291 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-045 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-244 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-051 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-270 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C532-606 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C532-258 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C532-292 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C532-605 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JF42-034 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JF31-037 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JF42-205 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C632-076 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C632-273 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-277 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-047 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-050 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 6 CDX-0007C.0006
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R112-007 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R112-222 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R112-088 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R112-066 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R112-248 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R112-264 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R112-410 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C622-001 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C622-403 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-445 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-076 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-625 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-238 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-239 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-624 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17B712-052 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17B712-064 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17B712-051 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K512-010 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K512-040 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K512-046 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K512-047 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K512-009 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-235 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-621 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-623 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-233 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-234 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-620 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q221-431 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P532-639 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P532-673 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P532-629 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-064 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-063 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-059 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C512-672 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C512-013 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17B712-016 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17B712-014 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-055 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-058 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-274 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 7 CDX-0007C.0007
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-276 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JE22-058 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-615 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-209 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-636 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-443 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-806 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-015 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-016 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-442 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-065 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P612-068 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-16Q221-615 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-16Q221-476 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A311-071 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A311-272 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A311-277 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A311-093 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A311-094 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P722-052 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q411-004 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q411-007 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P732-054 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17E212-049 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q411-005 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P722-053 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17E212-050 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A611-015 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A611-013 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q411-006 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P722-051 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C722-010 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17G111-091 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17G111-089 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-436 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16L511-032 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16L511-033 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A611-011 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17G111-204 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-042 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17G111-203 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B91641-273 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B91641-272 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 8 CDX-0007C.0008
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-040 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17G111-202 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-201 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K722-021 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P522-202 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C612-408 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K622-022 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P622-048 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-073 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-074 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q213-449 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-060 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-291 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-290 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P632-292 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P722-012 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17E212-021 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P622-824 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P732-013 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K512-064 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17E212-048 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-17A611-012 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-251 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-248 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-181612-035 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-249 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700K00-I06 960617 6 CORE i7-8700K 9S6-B91314-243 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C622-434 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B91641-271 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-267 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B91641-274 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A611-014 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JF42-276 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-041 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-805 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-252 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17G111-093 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q412-253 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17E212-022 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-250 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91911-051 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-080 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JE32-018 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 9 CDX-0007C.0009
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JF42-041 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P732-014 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16K512-033 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91314-252 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17E212-023 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S7-17A522-069 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92011-411 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R112-252 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17B712-026 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C512-077 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B92631-055 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16R312-029 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P512-226 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B92011-406 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q411-002 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B91318-278 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-9700K00-I06 983355 8 CORE i7-9700K 9S6-B91318-279 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16P622-823 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C622-437 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C512-078 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-079 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8850H05-I06 963719 6 CORE i7-8850H 9S7-17A311-039 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-059 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C622-041 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0K-8950H05-I06 975241 6 CORE i9-8950HK 9S7-16Q221-622 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I9 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C522-081 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17A311-040 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 607-17B71-02S NB-MB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0C-8400000-I06 960619 6 CORE i5-8400 9S7-1T3111-216 NB 1272 14nm COFFEE LAKE INTEL(R) CORE(TM) I5 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C622-040 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16JF42-259 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17G111-205 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-17C632-209 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8750H05-I06 963718 6 CORE i7-8750H 9S7-16Q211-271 NB 1272 14nm COFFEE LAKE INTEL(R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S7-17A512-026 NB 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0D-8700000-I06 960618 6 CORE i7-8700 9S6-B91314-230 DT 1272 14nm COFFEE LAKE INTEL (R) CORE (TM) I7 A0F-N400005-I06 961640 DUAL CORE N4000 9S6-AAC211-005 AIO 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) A0F-N400005-I06 961640 DUAL CORE N4000 9S6-AAC211-007 AIO 1273 14nm GEMINI LAKE INTEL(R) CELERON(R) A0E-N500005-I06 961638 QUAD CORE N5000 9S6-AAC211-025 AIO 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER A0E-N500005-I06 961638 QUAD CORE N5000 9S6-AAC211-008 AIO 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER A0E-N500005-I06 961638 QUAD CORE N5000 9S6-AAC211-006 AIO 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER A0E-N500005-I06 961638 QUAD CORE N5000 9S6-B17111-010 DT 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER A0E-N500005-I06 961638 QUAD CORE N5000 9S6-B17111-011 DT 1273 14nm GEMINI LAKE INTEL(R) PENTIUM(R) SILVER 10 CDX-0007C.00010
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0B-7100000-I06 954033 DUAL CORE i3-7100 9S6-AC1711-212 AIO 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0B-7100000-I06 954033 DUAL CORE i3-7100 9S6-AAC111-028 AIO 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0B-7100000-I06 954033 DUAL CORE i3-7100 9S6-AAC111-029 AIO 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0B-7100000-I06 954033 DUAL CORE i3-7100 9S6-AAC111-002 AIO 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0B-7100000-I06 954033 DUAL CORE i3-7100 9S6-AC1711-087 AIO 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0B-7100000-I06 954033 DUAL CORE i3-7100 9S6-AAC111-053 AIO 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0B-7100000-I06 954033 DUAL CORE i3-7100 9S6-AAC111-052 AIO 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0B-7100000-I06 954033 DUAL CORE i3-7100 9S6-AC1711-083 AIO 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0C-7200U25-I06 953353 DUAL CORE i5-7200U 9S6-AEC113-009 AIO 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7200U25-I06 953353 DUAL CORE i5-7200U 936-B15921-020 DT BB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7200U25-I06 953353 DUAL CORE i5-7200U 936-B15921-033 DT BB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7200U05-I06 951957 DUAL CORE i5-7200U 9S7-16J712-058 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7200U05-I06 951957 DUAL CORE i5-7200U 9S7-179773-026 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7200U05-I06 951957 DUAL CORE i5-7200U 936-B14211-006 DT BB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7200U25-I06 953353 DUAL CORE i5-7200U 939-9A95-005 IPS-BB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0H-E315025-I06 952951 QUAD CORE E3-1505MV6 9S7-16H812-675 NB 1272 14nm KABY LAKE INTEL(R)XEON(R) A0H-E315025-I06 952951 QUAD CORE E3-1505MV6 9S7-17A131-687 NB 1272 14nm KABY LAKE INTEL(R)XEON(R) A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16J962-265 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16J962-1407 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16J962-2011 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16P112-228 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16J962-407 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16J962-624 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16M312-010 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16J942-285 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16JD21-093 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7300H05-I06 952959 QUAD CORE i5-7300HQ 9S7-16JD21-280 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-020 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-258 DT 1273 14nm KABY LAKE INTEL(R) CORE(TM) I6 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-242 DT 1274 10nm KABY LAKE INTEL(R) CORE(TM) I7 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-274 DT 1275 10nm KABY LAKE INTEL(R) CORE(TM) I8 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-053 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I9 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-268 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I10 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-091 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I11 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-028 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I12 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B09031-264 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I13 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-AE9311-069 AIO 1272 14nm KABY LAKE INTEL(R) CORE(TM) I14 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-AE9311-054 AIO 1272 14nm KABY LAKE INTEL(R) CORE(TM) I15 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90111-224 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I16 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-047 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I17 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B91011-020 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I18 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-261 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I19 A0C-7400010-I06 952986 QUAD CORE i5-7400 9S6-B90611-086 DT 1272 14nm KABY LAKE INTEL(R) CORE(TM) I20 11 CDX-0007C.00011
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0C-8250U05-I06 959160 QUAD CORE i5-8250U 9S7-14B121-060 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0C-8250U05-I06 959160 QUAD CORE i5-8250U 9S7-14B141-064 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0E-G456000-I06 952994 DUAL CORE G4560 9S6-AAC111-026 AIO 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) A0C-8250U05-I06 959160 QUAD CORE i5-8250U 9S7-14B141-269 NB 1272 14nm KABY LAKE INTEL(R) CORE(TM) I5 A0F-G393000-I06 954043 DUAL CORE G3930 9S6-AAC111-023 AIO 1272 14nm KABY LAKE INTEL(R) CELERON(R) A0F-G393000-I06 954043 DUAL CORE G3930 9S6-AAC111-027 AIO 1272 14nm KABY LAKE INTEL(R) CELERON(R) A0B-7100U05-I06 951959 DUAL CORE i3-7100U 936-B14211-007 DT BB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0D-7500U05-I06 951958 DUAL CORE i7-7500U 936-B14211-005 DT BB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7500U05-I06 951958 DUAL CORE i7-7500U 9S7-16JA11-013 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7500U05-I06 951958 DUAL CORE i7-7500U 9S7-16JA11-002 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7500U05-I06 951958 DUAL CORE i7-7500U 9S7-16JA21-017 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-077 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90111-217 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-037 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B09031-281 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91511-008 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-073 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91521-071 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91521-088 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B09031-267 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90611-089 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91511-021 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90611-271 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90611-405 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-063 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91511-007 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90111-215 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-062 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90612-096 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90611-202 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90611-018 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90111-216 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-058 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91521-252 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90611-217 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90611-267 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90612-070 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91521-036 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91521-070 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B91511-006 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-013 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-057 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90611-090 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 12 CDX-0007C.00012
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-078 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90612-272 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B90711-036 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700010-I06 953004 QUAD CORE i7-7700 9S6-B09031-246 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K222-10S NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179993-402 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1067 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179C11-053 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179C11-001 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179C11-062 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179C11-079 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179C11-068 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B412-009 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J911-059 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179577-1083 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179577-1082 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179577-1091 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179577-1032 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179577-1093 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179577-1210 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179C11-080 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1896 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBC2-1029 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBC2-1038 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A121-1006 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A121-1226 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A121-693 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-178541-448 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-178554-638 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-178554-639 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799E5-1097 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799E5-1440 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799E5-1463 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799E5-863 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799E5-1227 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799E5-1218 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799E5-699 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBA1-837 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBA1-1061 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBA1-836 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBB2-1008 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBC2-873 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB92-1264 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 13 CDX-0007C.00013
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBC2-877 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBE2-1044 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JBE2-1048 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J932-264 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179941-030 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB12-466 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179B93-281 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16L231-239 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16L231-240 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16L231-238 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179BC3-677 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799B3-622 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799B3-615 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-250 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-298 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-402 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-066 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-045 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-249 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-256 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-003 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C312-008 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C312-023 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A211-215 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179B93-284 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179BCC-651 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179BCC-848 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179BCC-668 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179BCC-650 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-625 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-056 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B112-223 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B112-224 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B112-441 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B112-466 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B112-444 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B112-225 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A211-214 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-14A332-069 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-14A332-210 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-620 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-2027 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-2013 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 14 CDX-0007C.00014
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-2631 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1645 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-2089 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1273 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1408 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1427 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1646 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-2070 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1096 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB12-822 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB12-659 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JD21-001 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JD21-279 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16M312-008 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179947-027 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB92-661 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB92-653 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799C9-666 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-001 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-202 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-212 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-096 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-213 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-075 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB82-644 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB12-694 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799B3-621 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799B3-667 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9C2-1045 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799D3-1250 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799D3-1214 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J572-1862 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J572-1861 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799D3-1213 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179B11-416 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179B11-418 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179B11-665 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0F-3865U05-I06 953360 DUAL CORE 3865U 936-B15921-019 DT BB 1272 14nm KABY LAKE INTEL(R) CELERON(R) A0F-3865U05-I06 953360 DUAL CORE 3865U 9S6-AEC113-025 AIO 1272 14nm KABY LAKE INTEL(R) CELERON(R) A0F-3865U05-I06 953360 DUAL CORE 3865U 9S6-AEC113-026 AIO 1272 14nm KABY LAKE INTEL(R) CELERON(R) A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179B11-865 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J572-1833 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J572-1828 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 15 CDX-0007C.00015
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J572-1832 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-021 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-002 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K332-024 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K322-066 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K332-023 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K412-016 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179941-658 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179941-096 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179B11-471 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K232-280 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K222-610 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K222-467 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K232-290 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P112-215 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-002 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K412-060 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K412-061 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0E-4415U05-I06 953359 DUAL CORE 4415U 9S6-B15921-019 DT 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) A0E-4415U05-I06 953359 DUAL CORE 4415U 9S6-AEC113-023 AIO 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) A0E-4415U05-I06 953359 DUAL CORE 4415U 9S6-AEC113-024 AIO 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K412-062 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B312-089 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B312-001 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B312-033 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17B312-060 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9I2-1452 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9I2-2096 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9I2-2025 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9I2-2088 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-067 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17C112-252 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB42-463 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179985-028 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9C2-1046 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9F1-1095 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9B2-2223 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JB42-408 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K212-228 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K222-294 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K212-275 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K212-674 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K222-293 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 16 CDX-0007C.00016
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K212-230 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K212-252 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K212-229 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K222-401 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A121-1005 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A121-1039 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A121-865 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-17A121-887 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16P312-008 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9B2-2076 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K312-001 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K322-206 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K312-034 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K312-078 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K322-063 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JC12-034 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JC12-003 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7920H05-I06 952952 QUAD CORE i7-7920HQ 9S7-181542-253 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7920H05-I06 952952 QUAD CORE i7-7920HQ 9S7-181542-252 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7920H05-I06 952952 QUAD CORE i7-7920HQ 9S7-181542-213 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7920H05-I06 952952 QUAD CORE i7-7920HQ 9S7-181542-212 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7920H05-I06 952952 QUAD CORE i7-7920HQ 9S7-16K222-407 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16JC12-041 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179BB3-473 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J932-055 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-179BC3-670 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7920H05-I06 952952 QUAD CORE i7-7920HQ 9S7-16K322-040 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-1799A8-444 NB-BB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K232-297 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K332-067 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J9B2-1428 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16J962-1227 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-178541-450 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-16K412-253 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700H05-I06 952957 QUAD CORE i7-7700HQ 9S7-14A332-072 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91211-014 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91312-013 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91312-016 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91211-052 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91312-052 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91312-012 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91312-015 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91312-028 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 17 CDX-0007C.00017
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91211-022 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S6-B91211-024 DT 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7700K10-I06 953006 QUAD CORE i7-7700K 9S7-1T1122-243 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0F-3865U05-I06 953360 DUAL CORE 3865U 9S6-AEC113-056 AIO 1272 14nm KABY LAKE INTEL(R) CELERON(R) A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A211-205 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A211-028 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A211-082 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A211-083 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A211-202 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-480 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-423 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0E-4415U05-I06 953359 DUAL CORE 4415U 9S6-AEC113-055 AIO 1272 14nm KABY LAKE INTEL(R) PENTIUM(R) A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-479 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-1T2111-067 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-1T2111-088 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-823 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-1038 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-1024 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-872 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-1095 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0B-7100U25-I06 953354 DUAL CORE i3-7100U 936-B15921-030 DT-BB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I3 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-1216 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-1084 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-858 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-867 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-1097 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-866 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A131-648 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A131-1205 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A131-1211 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-425 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-181542-266 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-17A121-426 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-1T2111-239 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-7820H05-I06 952955 QUAD CORE i7-7820HK 9S7-1T2111-251 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-8550U05-I06 959163 QUAD CORE i7-8550U 9S7-14B121-270 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-8550U05-I06 959163 QUAD CORE i7-8550U 9S7-14B121-059 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0D-8550U05-I06 959163 QUAD CORE i7-8550U 9S7-14B212-074 NB 1272 14nm KABY LAKE INTEL (R) CORE (TM) I7 A0F-3865U05-I06 953360 DUAL CORE 3865U 9S6-A61611-036 AIO 1272 14nm KABY LAKE INTEL(R) CELERON(R) A0B-6100010-I06 945208 DUAL CORE i3-6100 9S6-AC1711-035 AIO 1272 14nm SKYLAKE INTEL (R) CORE (TM) I3 A0H-E315015-I06 944366 QUAD CORE E3-1505MV5 9S7-16H812-258 NB 1272 14nm SKYLAKE INTEL(R)XEON(R) A0H-E315015-I06 944366 QUAD CORE E3-1505MV5 9S7-178212-400 NB 1272 14nm SKYLAKE INTEL(R)XEON(R) A0H-E315015-I06 944366 QUAD CORE E3-1505MV5 9S7-178212-423 NB 1272 14nm SKYLAKE INTEL(R)XEON(R) 18 CDX-0007C.00018
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0C-6300H15-I06 944367 QUAD CORE i5-6300HQ 9S7-179675-001 NB 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6300H15-I06 944367 QUAD CORE i5-6300HQ 9S6-AEA111-041 AIO 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6300H15-I06 944367 QUAD CORE i5-6300HQ 9S6-AEA111-049 AIO 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6300H15-I06 944367 QUAD CORE i5-6300HQ 9S7-16J622-047 NB 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6300H15-I06 944367 QUAD CORE i5-6300HQ 9S7-179586-696 NB 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6400020-I06 947207 QUAD CORE i5-6400 9S6-B90611-009 DT 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6400020-I06 947207 QUAD CORE i5-6400 9S6-B90611-008 DT 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6400020-I06 947207 QUAD CORE i5-6400 9S6-B90111-070 DT 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6400020-I06 947207 QUAD CORE i5-6400 9S6-AF1C11-026 AIO 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6400020-I06 947207 QUAD CORE i5-6400 9S6-AE9311-022 AIO 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0C-6400020-I06 947207 QUAD CORE i5-6400 9S6-B90111-050 DT 1272 14nm SKYLAKE INTEL(R) CORE(TM) I5 A0E-G440010-I06 943908 DUAL CORE G4400 9S6-AA7811-058 AIO 1272 14nm SKYLAKE INTEL(R) PENTIUM(R) A0D-6700010-I06 943465 QUAD CORE i7-6700 9S6-B90111-093 DT 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700010-I06 943465 QUAD CORE i7-6700 9S6-B90111-208 DT 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700010-I06 943465 QUAD CORE i7-6700 9S6-B90111-209 DT 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700010-I06 943465 QUAD CORE i7-6700 9S6-B90111-061 DT 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700020-I06 947202 QUAD CORE i7-6700 9S7-1T1111-028 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700K10-I06 943463 QUAD CORE i7-6700K 9S6-B90311-018 DT 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700K20-I06 947200 QUAD CORE i7-6700K 9S7-1T1112-091 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700K20-I06 947200 QUAD CORE i7-6700K 9S7-1T1112-096 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700K20-I06 947200 QUAD CORE i7-6700K 9S7-1T1111-002 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700K10-I06 943463 QUAD CORE i7-6700K 9S6-B90511-032 DT 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700K10-I06 943463 QUAD CORE i7-6700K 9S6-B90511-033 DT 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700K20-I06 947200 QUAD CORE i7-6700K 9S7-1T1111-029 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-178211-219 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-181412-012 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-178312-245 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-177514-202 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-175B12-003 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16JB42-218 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16JB42-248 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S6-AEA211-014 AIO 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16H712-002 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-17B112-016 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-17B112-033 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-17B112-025 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16JB12-001 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16L221-087 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16L221-078 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16L221-005 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-178312-219 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-178312-258 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-181512-023 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 19 CDX-0007C.00019
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-181512-055 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-17A111-058 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-17A111-202 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-17A111-226 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-17A111-060 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-17A111-200 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-17A111-017 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-181412-002 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-181412-274 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-1T2111-007 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-178344-030 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-178211-408 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-1T2111-02S NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-178233-805 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-1T2111-006 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6820H25-I06 944356 QUAD CORE i7-6820HK 9S7-17A111-201 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6920H15-I06 944371 QUAD CORE i7-6920HQ 9S7-178311-041 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16J562-1446 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16JB12-650 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16JB12-086 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16J512-004 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-179441-070 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16K212-422 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16K212-001 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16K212-034 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16K212-021 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16K212-469 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-179541-003 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-179B11-009 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-179B11-010 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6920H15-I06 944371 QUAD CORE i7-6920HQ 9S7-178312-218 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6920H15-I06 944371 QUAD CORE i7-6920HQ 9S7-178312-260 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6920H15-I06 944371 QUAD CORE i7-6920HQ 9S7-181412-257 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178211-034 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178211-831 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16J412-233 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-14A312-006 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178511-063 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16K212-041 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16J512-203 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178511-033 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16JB12-021 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178511-032 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 20 CDX-0007C.00020
COMPONENT NAME MMID CPU TYPE MSI ITEM # Product Type PROCESS CODE PROCESS NODE ARCHITECTURE BRAND MSI A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178533-031 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178511-015 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-16H712-053 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178211-1252 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-178511-076 NB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0D-6700H15-I06 944368 QUAD CORE i7-6700HQ 9S7-179441-033 NB-BB 1272 14nm SKYLAKE INTEL (R) CORE (TM) I7 A0C-8265U15-I06 982921 QUAD CORE i5-8265U 9S7-14B321-200 NB 1272 14nm WHISKEY LAKE INTEL (R) CORE (TM) I5 A0C-8265U15-I06 982921 QUAD CORE i5-8265U 9S7-16S111-099 NB 1272 14nm WHISKEY LAKE INTEL (R) CORE (TM) I5 A0C-8265U15-I06 982921 QUAD CORE i5-8265U 9S7-16S111-200 NB 1272 14nm WHISKEY LAKE INTEL (R) CORE (TM) I5 A0D-8565U05-I06 982918 QUAD CORE i7-8565U 9S7-16S111-008 NB 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 A0D-8565U05-I06 982918 QUAD CORE i7-8565U 9S7-16S111-085 NB 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 A0D-8565U05-I06 982918 QUAD CORE i7-8565U 9S7-16S111-091 NB 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 A0D-8565U05-I06 982918 QUAD CORE i7-8565U 9S7-16S211-018 NB 1272 14nm WHISKEY LAKE INTEL(R) CORE(TM) I7 21 CDX-0007C.00021
CERTAIN INTEGRAGTED CIRCUITS AND PRODUCTS CONTAINING THE SAME Inv. No. 337-TA-1148 PUBLIC CERTIFICATE OF SERVICE I, Lisa R. Barton, hereby certify that the attached INITIAL DETERMINATION has been served via EDIS upon the Commission Investigative Attorney, John Shin, Esq., and the following parties as indicated, on 6/16/2020. Lisa R. Barton, Secretary U.S. International Trade Commission 500 E Street, SW, Room 112 Washington, DC 20436 On Behalf of Complainant Tela Innovations, Inc.: William D. Belanger, Esq. PEPPER HAMILTON LLP 125 High Street 19th Floor, High Street Tower Boston, MA 02110-2736 Email: belangew@pepperlaw.com ☐ Via Hand Delivery ☐ Via Express Delivery ☐ Via First Class Mail ☒ Other: Email Notification of Availability to Download On Behalf of Respondents Acer, Inc., Acer America Corp., Asustek Computer Inc., Asus Computer International, Intel Corporation, Lenovo Group Ltd., Lenovo (United States) Inc., Micro-Star International Co., Ltd., and MSI Computer Corp.: Todd M. Friedman, Esq. KIRKLAND & ELLIS LLP 601 Lexington Avenue New York, New York 10022 Email: tfriedman@kirkland.com ☐ Via Hand Delivery ☐ Via Express Delivery ☐ Via First Class Mail ☒ Other: Email Notification of Availability to Download
1 a UNITED STATES INTERNATIONAL TRADE COMMISSION Washington, D.C. In the Matter of CERTAIN INTEGRATED CIRCUITS AND Inv. No. 337-TA-1148 PRODUCTS CONTAINING THE SAME ORDER NO. 34: CONSTRUING TERMS OF THE ASSERTED CLAIMS V (October 2, 2019)
TABLE OF CONTENTS ~ INTRODUCTION ....................................................... ..'...................................................... .. 1 RELEVANT LAW .............................................................................................................. ..2 LEVEL OF ORDINARY SKILL ........................................................................................ ..7 THE ASSERTED PATENTS .............................................................................................. ..8 A. Technical Background ............................................................................................. ..9 B. The Asserted Claims .............................................................................................. .. 11 CLAIM CONSTRUCTION ............................................................................................... ..47 A. Construction of the Agreed-Upon Claim Term ..................................................... ..47 B. Construction of the Disputed Claim Tenns .............................................................48 1. “linear [conductive segment(s) / conductive structure(s)]’.’....................... ..48 2. “gate electrode” .......................................................................................... ..50 3. “gate electrode feature(s) / gate structure(s)” ............................................ ..53 4. “diffusion region(s)” .............................................................................. ..55 5. “[gate horizontal / first-metal vertical grid]; [secon'd-metal horizontal] grid; [contact vertical] grid; [third-metal vertical] grid; [diffusion contact] grid” 56 6. “[gate / metal / contact] gridline(s)” .......................................................... ..59 7. “contact structure(s) / gate contact structure(s)” ........................................ ..60 8. “gate pitch” ................................................................................................ ..61 9. “each first-metal structure in the region having at least one adjacent first metal structure positioned next to each of its sides in accordance with a y coordinate spacing of less than or equal to 193 nanometers” .................... ..62 » 10. “wherein each second-metal structure in the region is positioned next to at ' least one other second-metal structure on a first side in accordance with a second-metal pitch and is positioned next to at least one other second-metal structure on a second side in accordance with the second-metal pitch” ......67 11. “each third-metal structure in the region having at least one adjacent third metal structure positioned next to each of its sides in accordance with a y coordinate spacing of less than or equal to 193 nanometers” .................... ..69
I. INTRODUCTION ' This investigation was instituted by the Commission on March 15, 2019 to determine whether certain tri-gate integrated circuits and products which contain such circuits infringe U.S. Patent Nos. 7,943,966 (“the ’966 patent”), 7,948,012 (“the ’012 patent”), 10,141,334 (“the ’334 patent”), 10,141,335 (“the ’335 patent”), and 10,186,523 (“the ’523 patent”) (altogether, “the Asserted Patents’_’).See 84 Fed. Reg. 9558-9 (Mar. 15, 2019). On October 2, 2019, however, the \ ‘966 and .‘0l2 patents were terminated from the investigation. (Order No. 33.) The complainant is Tela Innovations, Inc. (“Tela” or “Complainant”). The respondents are Acer, Inc., Acer America Corporation, AsusTek Computer Inc., Asus Computer International, Intel Corporation, Lenovo Group Ltd., Lenovo (United States) Inc., Micro-Star International Co., Ltd., and MSI Computer Corp. (together, “Respondents”). The Commission Investigative Staff (“Staff”) is alsoa participant (all collectively, “the Parties”). Pursuant to Grormd Rule 8, a Markman hearing was held July 17, 2019, regarding the interpretation of certain terms of the patent at issue. Prior to the hearing, the Parties filed a joint claim construction chart setting forth a limited set of terms to be construed, with an updated joint chart after the hearing (EDIS Doc. ID 683388; see Order No. 24). Tela and Respondents filed initial and rebuttal claim construction briefs,‘ wherein each party offered its construction for the claim 1 The briefs and amended chart submitted by the Parties are referred to hereafter as: CIMB l Complainant’s Corrected Initial Markman Brief CRMB I Complainant’s Rebuttal Markman Brief RIMB | Respondents’ Initial Markman Brief RRMB I Respondents’ Rebuttal Markman Brief SMB | Staff‘ s Markman Brief , JC | Updated Joint Claim Construction Chart Hr’g Tr. | Markman hearing transcript Tutorial | Joint Technology Tutorial i Comp. Tutorial | Complainanfs Technology Tutorial Resp. Tutorial | Respondents’ Technology Tutorial l
terms in dispute,‘along with support for its proposed interpretation. The Staff filed a single brief. Further, per my request, the Parties prepared and filed a joint tutorial on the technology at issue (EDIS Doc. ID 680838), as well as their own individualized tutorials (EDIS Doc. IDs 682967, 682993). II. RELEVANT LAW “An infringement analysis entails two steps. The first step is determining the meaning and scope of the patent claims asserted to be infringed. The second step is comparing the properly construed claims to the device accused of infringing.” Markman v. WestviewInstruments, Inc., 52 F.3d 967, 976 (Fed. Cir. 1995) (en banc) (internal citations omitted), afl’d, 517 U.S. 370 (1996). Claim construction is a “matter of law exclusively for the court.” Id. at 970-71. “The construction of claims is simply a way of elaborating the normally terse claim language in order to understand and explain, but not to change, the scope of the claims.” Embrex, Inc. v. Serv. Eng’g C0rp., 216 F.3d 1343, 1347 (Fed. Cir. 2000). Claim construction focuses on the intrinsic evidence, which consists of the claims themselves, the specification, and the prosecution history. See Phillips v. AWH Corp, 415 F.3d 1303, 1314 (Fed. Cir. 2005) (en bane); see also Markman, 52 F.3d at 979. As the Federal Circuit in Phillips explained, courts must analyze each of these components to determine the “ordinary and customary meaning of a claim tenn” as understood by a person of ordinary skill in the art at the time of the invention. 415 F.3d at 1313. “Such intrinsic evidence is the most significant source of the legally operative meaning of disputed claim language.” Bell Atl. Network Servs., Inc. v. Covad C0mmc’ns Grp., Inc., 262 F.3d 1258, 1267 (Fed. Cir. 2001). “It is a ‘bedrock principle’ of patent law that ‘the claims of a patent define the invention to which the patentee is entitled the right to exclude.”’ Phillips, 415 F.3d at 1312 (quoting Innova/Pure Water, Inc. v. Safari Water Filtration Sys., 1nc., 381 F.3d 1111, 1115 (Fed. Cir. 2004)). “Quite apart 2
from the written description and the prosecution history, the claims themselves provide substantial guidance as to the meaning of particular claims terms.” Id. at 1314; see also Interactive Gift Express, Inc. v. Compuserve Inc., 256 F.3d 1323, 1331 (Fed. Cir. 2001) (“In construing claims, the analytical focus must begin and remain centered on the language of the claims themselves, for it is that language that the patentee chose to use to ‘particularly point [ ] out and distinctly claim [ ] the subject matter'which the patentee regards as his invention.”). The context in which a term is used in an asserted claim can be “highly instructive.” Phillips, 415 F.3d at 1314. Additionally, other claims in the same patent, asserted or unasserted, may also provide guidance as to the meaning of a claim tenn. Id. “Courts do not rewrite claims; instead, we give effect to the terms chosen by the patentee.” K-2 Corp. v. Salomon S.A., 191 F.3d 1356, 1364 (Fed. Cir. 1999). . The specification “is always highly relevant to the claim construction analysis. Usually it is dispositive; it is the single best guide to the meaning of a disputed term.” Phillips, 415 F.3d at 1315 (quoting Vitronics Corp. v. Conceptronic, Inc. , 90 F.3d 1576, 1582 (Fed. Cir. 1996)). “[T]he specification may reveal a special definition given to a claim term by the patentee that differs from the meaning it would otherwise possess. In such cases, the inventor’s lexicography govems.” Id. at 1316. “In other eases, the specification may reveal an intentional disclaimer, or disavowal, of claim scope by the inventor.” Id. As a general rule, however, the particular examples or embodiments discussed in the specification are not to be read into the claims as limitations. _1d.at 1323. In the end, “[t]he construction that stays true to the claim language and most naturally aligns with the patent’s description of the invention will be the correct construction.” Id. at 1316 (quoting Renishaw PLC v. Marposs S0cieta' per Azioni, 158 F.3d 1243, 1250 (Fed. Cir. 1998)). In addition to the claims and the specification, the prosecution history should be examined, if in evidence. Phillips at 1317; see Liebel-Flarsheim C0. v. Medrad, Inc., 358 F.3d 898, 913 (Fed. Cir. 2004). The prosecution history can “often inform the meaning of the claim language by 3 .
demonstrating how the inventor understood the invention and whether the inventor limited the invention in the course of prosecution, making the claim scope narrower than it would otherwise be.” Phillips, 415 F.3d at 1317; see Chimie v. PPG Indus. Inc., 402 F.3d 1371, 1384 (Fed. Cir. 2005) (“The purpose of consulting the prosecution history in construing a claim is to exclude any interpretation that was disclaimed during prosecution.”). When the intrinsic evidence does not establish the meaning of a claim, then extrinsic evidence (i.e., all evidence external to the patent and the prosecution history, including dictionaries, inventor testimony, expert testimony, and leamed treatises) may be considered. Phillips, 415 F.3d at 1317. Extrinsic evidence is generally viewed as less reliable than the patent itself and its prosecution history in determining how to define claim terms. Id. “The court may receive extrinsic evidence to educate itself about the invention and the relevant technology, but the court may not use extrinsic evidence to arrive at a claim construction that is clearly at odds with the construction mandated by the intrinsic evidence.” Elkay Mfg. C0. v. Ebco Mfg. C0., 192 F.3d 973, 977 (Fed. Cir. 1999). ~ If, after a review of the intrinsic and extrinsic evidence, a claim term remains ambiguous, the claim should be construed so as to maintain its validity. Phillips, 415 F.3d at 1327. Claims, however, cannot be judicially rewritten in order to fulfill the axiom of preserving their validity. See Rhine v. Casio, Inc., 183 F.3d 1342, 1345 (Fed. Cir. 1999). Thus, “if the only claim construction that is consistent with the claim’s language and the written description renders the claim invalid, then the axiom does not apply and the claim is simply invalid.” Id. V The construction of a claim term is generally guided by its ordinary meaning. However, courts may deviate from the ordinary meaning when: (1) “the intrinsic evidence shows that the patentee distinguished that term from prior art on the basis of a particular embodiment, expressly disclaimed subject matter, or described a particular embodiment as important to the invention”; or 1 4
1 (2) “the patentee acted as his own lexicographer and clearly set forth a definition of the disputed claim term in either the specification or prosecution history.” Edwards Lzfesciences LLC v. Cook Inc., 582 F.3d 1322, 1329 (Fed. Cir. 2009); see also GE Lighting S0ls., LLC v. AgiLight, Inc., 750 F.3d 1304, 1309 (Fed. Cir. 2014) (“the specification and prosecution history only compel departure from'the plain meaning in two instances: lexicography and disavowalf’); Omega Eng ’g, Inc, v. Raytek C0rp., 334 F.3d 1314, 1324 (Fed. Cir. 2003) (“[W]here the patentee has unequivocally disavowed a certain meaning to obtain his patent, the doctrine of prosecution disclaimer attaches and narrows the ordinary meaning of the claim congruent with the scope of the surrender.”); Rheox, Inc. v. Entact, Inc., 276 F.3d 1319, 1325 (Fed. Cir. 2002) (“The prosecution history limits the interpretation of claim terms so as to exclude any interpretation that was disclaimed during prosecution”). Nevertheless, there is a “heavy presumption that a claim term carries its ordinary and customary meaning.” CCS Fitness, Inc. v. Brunswick C0rp., 288 F.3d 1359, 1366 (Fed. Cir. 2002) (citations omitted). The standard for deviating from the plain and ordinary meaning is “exacting” and requires “a clear and unmistakable disclaimer.” Thorner v. Sony Computer Entm ’t Am. LLC, 669 F.3d 1362, 1366-67 (Fed. Cir. 2012); see Epistar Corp. v. Int ’l Trade Comm ’n, 566 F.3d -1321, 1334 (Fed. Cir. 2009) (requiring “expressions of manifest exclusion’ or restriction, representing a clear disavowal of claim scope” to deviate from the ordinary meaning) (citation omitted). As the Federal Circuit has explained, “[w]e do not read limitations from the specification into claims; we do not redefine words. Only the patentee can do that.” Thorner, 669 F.3d at 1366. A claim must also be definite. Pursuant to 35 U.S.C. § 112, second paragraph: “The specification shall conclude withlone or more claims particularly pointing out and distinctly claiming the subject matter which the applicant regards as his invention.” 35 U.S.C. § 112, 1]2. In Nautilus, Inc. v. Biosig Instruments, Inc. , 134 S. Ct. 2120, 2129 (2014), the Supreme Court held that § 112,1]2 requires “that a patent’s claims, viewed in light of the specification and prosecution history ' 5
, . infonn those skilled in the art about the scope of the invention with reasonable certainty.” A claim is required to “provide objective boundaries for those of skill in the art,” and a claim term is indefinite if it “might mean several different things and no informed and confident choice is among the contending definitions.” Interval Licensing LLC _v.AOL, Inc., 766 F.3d 1364, 1371 (Fed. Cir. 2014). A patent claim that is indefinite is invalid. 35 U.S.C. § 282(b)(3)(A). Courts are not required to construe every claim limitation of an asserted patent." See O2 Micro Intern. Ltd. v. Beyond Innovation Technology Co., 521 F.3d 1351, 1362 (Fed. Cir. 2008) (citations omitted); Vanderlande Indus. Nederland BV v. Int ’l Trade Comm ’n, 366 F.3d 1311, 1323 (Fed. Cir. 2004) (noting that the administrative law judge need-only construe disputed claim terms). Rather, “claim construction is a matter of resolution of disputed meanings and technical scope, to clarify and when necessary to explain what the patentee covered by the claims.” Id. at 1362 (quoting U.S. Surgical Corp. v. Ethicon, Inc., 103 F.3d 1554, 1568 (Fed. Cir. 1997)); see also Embrex, 216 F.3d at 1347 (“The construction of claims is simply a way of elaborating the nonnally terse claim language in order to Lmderstandand explain, but not to change, the scope of the claims.”) (citation omitted). ' In addition, “[a] determination that a claim term ‘needs no construction’ or has the ‘plain and ordinary meaning’ may be inadequate when a term has more than one ‘ordinary’ meaning or when reliance on a term‘s ‘ordinary’ meaning does not resolve the parties’ dispute.” 02 Micro, 521 F.3d at 1361. Claim construction, however, is not an “obligatory exercise in redundancy.” U.S. Surgical Corp., 103 F.3d at 1568. “[M]erely rephrasing or paraphrasing the plain language of a claim by substituting synonyms does not represent genuine claim construction.” C.R. Bard, Inc. v. U.S. Surgical Corp, 388 F.3d 858, 863 (Fed. Cir. 2004). 6
III. LEVEL OF ORDINARY SKILL Respondents’ opening brief offers no description of the person of ordinary skill in this art. (See generally RIMB.) An expert declaration attached to the brief, however, offers the following: In my opinion, with respect to the Asserted Patents, a person of / ordinary skill in the art would have had the equivalent of a bachelor’s degree in electrical engineering, physics, or materials science and at least three years of experience in semiconductor integrated circuit design, layout, and/or fabrication. Additional graduate education could substitute for professional experience, while significant experience in the field might substitute for formal education. (RIMB, Ex. 6 at 1]29.) The Staff offers the following definition: _ The Staff submits that one of ordinary skill in the field of semi conductor design and manufacturing, as related to the Asserted Patents, would have at least a Bachelor of Science degree in electrical or computer engineering or a related field and two to three years of practical experience, such as with semi-conductor design and/or manufacturing, or in lieu of practical experience at least a Master’s degree in electrical or computer engineering or a related field. All of the Asserted Patents relate back to the same provisional application, No. 60/781,288, which was filed on March 9, 2006. The time period for the state of the art is, therefore, around 2006. i (SMB at 5.) These proposed levels of skill are substantially similar. Tela initially proposed a level of skill in the art which was not pertinent, and later submitted a corrected brief with a more helpful proposal, although Tela never moved for leave to file it. In any event, Tela’s corrected proposed definition is substantially similar to the other parties’. (CIMB at 13.) Based on the technology and industry behind semiconductor integrated circuits at the 45 193 mn scale, at least three years of experience, as opposed to two, is an appropriate minimum for a person with only a bachelor’s degree. The expected undergraduate majors for one of ordinary skill working in hardware, as opposed to software or more theoretical fields, would be electrical P 7
engineering and computer engineering. Physics and materials science might be appropriate, but those disciplines provide less practical experience in design, layout work, and fabrication. And although experience can substitute for education, and education for experience, at least some practical experience would normally be required in a field focused on design and fabrication, even for a person with a master’s degree. On balance, a person having ordinary skill in the art at the time of invention would have: (1) a bachelor’_sdegree in electrical engineering or computer engineering with at least three years of experience in the field of semiconductor layout technology and integrated circuit design; (2) a master’s degree in electrical engineering or computer engineering with at least two years of experience in the same field; (3) a bachelor’s degree in physics or materials science with at least five years of experience in the same field; or (4) a comparable combination of education and experience. » IV. THE ASSERTED PATENTS The ’334 patent, entitled “Semiconductor Chip Including Region Having Rectangular Shaped Gate Structures and First-Metal Structures,” was issued on November 27, 2018 to Scott T. Becker and Michael C. Smayling. The ’334 patent reports assigmnent on its face to Tela Innovations, Inc. The ’335 patent, entitled “Semiconductor Cip [sic] Including Region Having Rectangular Shaped Gate Structures and First Metal Structures,” was issued on November 27, 2018 to Scott T. Becker and Michael C. Smayling. The ’335 patent reports an assigmnent on its face to Tela Innovations, Inc. ' The ’523 patent, entitled “Semiconductor Chip Having Region Including Gate Electrode Features Formed in Part from Rectangular Layout Shapes on Gate Horizontal Grid and First-Metal Structures Formed in part from Rectangular Layout Shapes on at least Eight First-Metal Gridlines 8 .
of First-Metal Vertical Grid,” was issued on January 22,‘2019 to Scott T. Becker and Michael C. Smayling. The ’523 patent reports an assignment on its face to Tela Innovations, Inc. All three of the Asserted Patents issued from continuation applications, which claim priority to a series of previous continuation applications, with anultimate claim of priority to Provisional Application No. 60/781,288, filed on March 9, 2006. All Asserted Patents therefore essentially share a common specification. (CIMB at 10 n.1; RIMB at 4 n.2.) A. Technical Background _ ' A semiconductor is a material that has electrical conductivity properties falling between that of a conductor and an insulator. (Tutorial at 2.) These conductive properties may be changed with the addition of impurities. (Id. at 6.) The addition of different types of impurities results in two different types of semiconductor, known as p-type and n-type. (Id.) P-type and n-type semiconductors can be used with other materials to construct transistors. (Tutorial at 10-13.) The relevant transistor here is a complementary metal oxide semiconductor, or CMOS. (Id. at 11, 14.) A CMOS transistor is made of four basic components: (1) a body made of one type of semiconductor; (2) a source region made of the other type of semiconductor; (3) a drain region also made of the other type of semiconductor; (4) a gate made of metal and an oxide, where the gate oxide functions as an insulator by separating the gate metal from the other components. (Id. at 10-14.) The source region and the drain region together constitute the diffusion region? (’523 patent at 9:35-42 (“diffusion regions 203 represent selected regions of the base substrate 201 within which impurities are introduced” and “diffusion contacts 205 are defined to enable connection between source and drain diffusion regions 203”).) 2 Although this term is construed below with regard to positioning and the nature of the substrate, the Parties do not dispute that the source and drain regions together form the diffusion region. (SMB at 36.) 9
VVhena voltage is applied to the gate an electric field is formed under it, causing a conductive channel connecting the source and drain to either appear or disappear, depending on the voltage and the type of _semiconductorused to fonn the source and drain. (Tutorial at 10-16.) As a result, current can be made to either flow or not flow from source to drain, and the transistor in effect acts as an on/off switch. (Id. at 10, 13.) Logic circuits using this switching effect may be formed by connecting many transistors together. (Tutorial at 10; Resp. Tutorial at 3-6.) A set of such circuits disposed on a semiconductor substrate is called an integrated circuit, or chip. (Tutorial at 2.) A silicon wafer is the substrate material for a CMOS chip. (Id. at 17.) 1The circuitry on a CMOS chip is formed through a multi-stage process, including layout, in which the size, shape, and spacing of the chip’s features are specified, followed.by photolithography. (Tutorial at 17, 19; see RIMB, Ex. 6 at 6 (“A layout represents the size, shape, and spacing gnlidelines for a given layer in a transistor”); Comp. Tutorial at 2"(describing “Layout & Simulation” as occurring before “Fabrication & Verification”).) In photolithography, a material called photoresist is deposited on the wafer. (Id. at 17.) Photoresist tuidergoes chemical changes when exposed to light. (Id. at 19.) In one embodiment of the photolithography process, a pattern of opaque chrome material is placed on transparent quartz glass to form a photomask corresponding to at least a portion of the layout. (Id. at 18.) The photomask is placed over the wafer, ultraviolet light is shined through it, and the underlying photoresist chemically changes to match the photomask’s pattern. _(Id.) Application of a solvent then removes some of the photoresist, leaving the remaining photoresist in either a positive or negative pattern (depending on the photoresist) matching that of the photomask. (Id. at 18-19.) Further processing can then be used to build features on the wafer; for example, in areas where photoresist has been removed, material may be added by deposition or removed by etching. (Tutorial at 19; Comp. Tutorial at 15-28.) Repeated application of photolithography and additional 10
processing results in a “stack of layers” on the wafer. (’523 patent at 9:14-15; see generally ’523 patent at Fig. 2.) Within these layers, the various features forming the integrated circuit include gates, gate electrodes, source and drain contacts, and other elements, all of which “enable . . . the desired circuit connectivity.” (Id. at 9:56-57; see generally id. at 9:30-49.) The density of circuitry can be increased by reducing feature size. (Tutorial at 20.) Historically, feature size has been shrinking, and in many cases features are smaller than the 1 wavelength of the light used for photolithography. (Id.) Because of the small feature size, interference patterns are generated during fabrication as shapes on the photomask interact with the light. (’523 patent at 4:16-17.) These interference pattems cause the fabricated feature shape to deviate fiom the designed feature shape, so much so that failure may result. (Id. at 4:22-24.) In particular, when “two-dimensionally varying features are located in neighboring proximity to each other, the light used to expose the features will interact in a complex and generally unpredictable manner,” and may result in, for instance, “layout feature shape distortion.” (’523 patent at 7:41-44, 8:25.) Although “[c]orrection methodologies” exist to solve this problem, “semiconductor product yield is reduced as a result of . . . two-dimensionally varying features disposed in proximity to each other.” (Id. at 4:24, 8:17-21.) The patents in suit claim a new such methodology focused on “topology,” or feature shape. (Id. at 7:36-37.) Specifically, the patents in suit assert that “layout feature shape enhancement can be realized if the layout feature shapes are rectangular, near the same size, and are oriented in the same direction.” (Id. at 9:8-9.) B. The Asserted Claims ' The ’334 patent has 30 claims. As of the date ofthis order, claims 1, 2, 5, 6, 9, 11, 15, 20, 24, 29, and 30 are asserted in this investigation, either as infringed or under the domestic industry ll
3 technical prong. The asserted claims read as follows (with the first instance of the agreed-upon terms ll’1italics and the first instance of the disputed terms highlighted in bold): A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, the gate structures positioned in accordance with a gate horizontal grid that includes at least sevengate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a vw'dthof less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate structure positioned thereon, wherein each pair of gate structures that are positioned in an end-to-end manner are separated by a line end-to line end gap of less than or equal to about 193 nanometers, wherein at least one gate structure within the region is a first-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region isa second-transistor-type-only gate structure that fonns at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region; Claims 7, 10, 22, and 23 are not listed as asserted in the Notice of Investigation, 84 Fed. Reg. 9559 but they are implicated by dependent claims 9, l 1, and 24, which are asserted. 12
a first-metal layer formed above top surfaces of the gate structures within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate structures, the first-metal layer separated from the top surfaces of the gate structures by at least one insulator material, adjacent metal layers in the stack of metal layers separated by at least one insulator material, wherein the first-metal layer includes first-metal structures positioned in accordance with a first-metal vertical grid, the first-metal vertical grid including at least eight first-metal gridlines, each first-metal structure in the region having a substantially rectangllar shape and positioned to extend lengthwise in an x direction in a substantially centered manner on an associated first-metal gridline, each first-metal structure in the region having at least one adjacent first-metal structure positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers, wherein each pair of first-metal structures that are positioned in an end-to-end manner are separated by a line end-to line end gap of less than or equal to about 193 nanometers; and at least six contact structures fonned within the region of the semiconductor chip, wherein at least six gate structures within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six contact structures, each of the at least six contact structures having a substantially rectangular shape with a corresponding length greater than a corresponding width and with the corresponding length oriented in the x-direction, each of the at least six contact structures positioned and sized to overlap both edges of the top surface of the gate structure to which it is in physical and electrical contact, 13
/ wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form part of a logic circuit, wherein the logic circuit includes electrical connections that collectively include first-metal structures positioned on at least five of the at least eight first-rnetal gridlines. 2. The semiconductor chip as recited in claim 1, wherein the region includes a second metal layer including second-metal structures positioned in accordance with a second-metal horizontal grid, the second-metal horizontal grid including at least eight second-metal gridlines, each second-metal structLu'ein the region having at least one adjacent second metal structure positioned next to each of its sides in accordance with an x-coordinate 3 spacing of less than or equal to 193 nanometers, each second-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in the y \ direction in a substantially centered manner along an associated second-metal gridline, wherein at least eight of the at least eight second-metal gridlines have at least one second metal structure positioned thereon, wherein each pair of second-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap, wherein the \ second-metal layer is positioned second in the stack of metal layers counting upward from the top surfaces of the gate structures. < 5. The semiconductor chip as recited in claim 2, wherein the at least six contact 1 structures are positioned in accordance with a contact vertical grid, the contact vertical grid including contact gridlines extending in the x-direction, each of the at least six contact structures positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated contact gridline, and at least two of the at least six contact 14
structures positioned to also extend lengthwise in the x-direction in a substantially centered manner along a corresponding first-metal gridline. 6. The semiconductor chip as recited in claim 2, wherein each second-metal structure in the region is positioned next to at least one other second-metal structure on a first side in accordance with a second-metal pitch and is positioned next to at least one other second-metal structure on a second side in accordance with the second-metal pitch, wherein the second-metal pitch is measured in the x-direction and is equal to the gate pitch. 7. The semiconductor chip as recited in claim 6, wherein each second-metal structure in the region has a substantially equal width as measured in the x-direction. 9. The semiconductor chip as recited in claim 7, wherein the region has a size of 1930 nanometers as measured in the x-direction and a size of 1930 nanometers as measured in the y-direction. » 10. The semiconductor chip as recited in claim 7, wherein the region includes a third metal layer including third-metal structures positioned in accordance with a third-metal vertical grid, the third-metal vertical grid including at least eight third-metal gridlines, each third-metal structure in the region having at least one adjacent third-metal structure positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers, each third-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated third-metal gridline, wherein at least eight of the at least eight third-metal gridlineshave at least one third-metal structure positioned thereon, wherein each pair of third-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap, wherein the third-metal layer is 15
positioned third in the stack of metal layers counting upward from the top surfaces of the gate structures. » 11. The semiconductor chip as recited in claim 10, wherein each second-metal structure in the region is positioned next to at least one other second-metal structure » on a first side in accordance with a second-metal pitch and is positioned next to at least one other second-metal structure on a second side in accordance with the second-metal pitch, wherein the second-metal pitch is measured in the x-direction and is equal to the gate pitch. 1 15. The semiconductor chip as recited in claim 1, wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of at least one transistor within the region of the semiconductor chip has a substantially rectangular shape. 20. The semiconductor chip as recited in claim 1, wherein the region includes a second metal layer including second-metal structures positioned in accordance witha second-metal horizontal grid, the second-metal horizontal grid including at least eight second-metal gridlines, each second-metal structure in the region having at least one adjacent second metal structure positioned next to each of its sides in accordance with an x-coordinate spacing of less than or equal to 193 nanometers, each second-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in the y direction in a substantially centered manner along an associated second-metal gridline, wherein at least eight of the at least eight second-metal gridlines have at least one second metal structure positioned thereon, wherein each pair of -second-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap, wherein the 16
second-metal layer is positioned second in the stack of metal layers counting upward from the top surfaces of the gate structures, J wherein the region includes a third-metal layer including third-metal structures positioned in accordance with a third-metal vertical grid, the third-metal vertical grid including at least eight third-metal gridlines, each third-metal structure in the region having at least one adjacent third-metal’ structure positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers, each third-metal structure in the third-metal layer having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated third-metal gridline, wherein at least eight of the at least eight third-metal gridlines have at least one third-metal structure positioned thereon, wherein each pair of third-metal structures that are positioned in an end-to-end manner are separated by a line end-to line end gap, wherein the third-metal layer is positioned third in the stack of metal layers upward from the top surfaces of the gate structures. , 22. The semiconductor chip as recited in claim 20, wherein the at least four transistors of the first transistor type include a first transistor of the first transistor type, wherein the at least four transistors of the second transistor type include a first transistor of the second transistor type, wherein a gate structure forming a gate electrode of the first transistor of the first transistor type is positioned on a given gate gridline, wherein a gate structure forming a gate electrode of the first transistor of the second transistor type is also positioned on the given gate gridline, wherein no other transistor is positioned on the given gate gridline between the gate structures that form the gate electrodes of the first transistor of the first transistor type and the first transistor of the second transistor type, » 17
wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein a diffusion region of the first transistor of the first transistor type is electrically connected to a diffusion region of the first transistor of the second transistor type, wherein the at least six contact structures include a contact structure substantially centered in the x-direction on the given gate gridline at a location between the diffusion regions of the first transistor of the first transistor type and the first transistor of the second transistor type. 23. The semiconductor chip as recited in claim 22, wherein an electrical connection between the diffusion region of the first transistor of the first transistor type and the diffusion region of the first transistor of the second transistor type includes at least one first metal structure and at least one second-metal structure. 24. The semiconductor chip as recited in claim 23, wherein the gate electrode of the first transistor of the first transistor type is electrically cormected to the gate electrode of the first transistor of the second transistor type. 29. A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, the gate structures positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate structure positioned thereon, wherein each pair of gate 1 as
structures that are positioned in an end-to-end manner are separated by a line end—to line end gap of less than or equal to about 193 nanometers, wherein at least one gate structure within the region is a first-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures Within the region; ' a number of contact structures fonned within the region of the semiconductor chip, /wherein each gate structure that forms any transistor gate electrode within the region has a respective top surface in physical and electrical contact with a corresponding contact structure having a substantially rectangular shape, wherein each contact structure that contacts a given gate structure that forrns any transistor gate electrode does not contact another gate structure, wherein each contact structure having a corresponding length greater than or equal to a corresponding width is oriented to have its_corresponding length extend in an x direction, wherein each contact structure that contacts a corresponding gate structure is positioned to overlap at least one edge of the corresponding gate structure, wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that fonns part of any transistor within the region has a substantially rectangular shape, l 7
wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively fonn a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein the at least four transistors of the first transistor type include a first transistor of the first transistor type, wherein the at least four transistors of the second transistor type include a first transistor of the second transistor type, wherein a first gate structure forms both a gate electrode of the first transistor of the first transistor type and a gate electrode of the first transistor of the second transistor type. A semiconductor chip, comprising: gate structures formed within a region of the semiconductorchip, the gate structures positioned in accordance vw'tha gate horizontal grid that includes a number of gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each gate structure in the region having a substantially rectangular shape with a width of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate structure positioned thereon, wherein each pair of gate structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers, wherein at least one gate structure within the region is a first-transistor-type-only gate 20
structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not fonn a gate electrode of a transistor of the first transistor type, wherein a total ntnnber of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region; . a number of contact structures fonned within the region of the semiconductor chip, wherein each of at least six gate structures within the region has a respective top surface in physical and electrical contact with a corresponding contact stmcture having a substantially rectangular shape, wherein each contact structure is centered in an x-direction on the gate structure with which it physical contacts, wherein each contact structure that has the substantially rectangular shape has a corresponding length greater than or equal to a corresponding width and is oriented to have its corresponding length extend in an x-direction, wherein each corresponding contact structure is in physical contact with only one gate structure, wherein each corresponding contact structure is positioned to overlap at least one edge of the gate structure contacted by the corresponding contact structure, wherein each transistor within the region is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of any transistor within the region has a substantially rectangular shape, wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a 21
portion of a multiplexer or a portion of a latch, wherein at least one first-transistor type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein both a gate electrode of a transistor of a first transistor type and a gate electrode of a transistor of a second transistor type are formed by a same gate structure within the region. i The ’335 patent has 30 claims. As of the date of this order, claims 1, 2, 5, 6, 9, 11, l5, 20, 24, 29, and 30 are asserted in this investigation, either as infringed or under the domestic industry technical prong/l The asserted claims read as follows (with the first instance of the agreed-upon terms in italics and the first instance of the disputed terms highlighted in bold): 1. A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, the gate structures formed in part based on corresponding gate structure layout shapes used as an input to a lithography process, the gate structure layout shapes positioned in accordance with a gate horizontal grid, the. gate horizontal grid including at least seven gate gridlines, each gate structure layout shape having a substantially rectangular shape and positioned to extend lengthwise in a y-direction in a substantially centered manner along an associated gate gridline, each gate gridline having at least one gate structure layout shape positioned thereon, wherein adjacently positioned ones of the gate structures are separated from each other by a gate pitch 4 Claims 7, 10, 22, and 23 are not listed as asserted in the Notice of Investigation, 84 Fed. Reg. 9559, but they are implicated by dependent claims 9, ll, and 24, which are asserted. 22
1 of less than or equal to about 193 nanometersaeach of the gate structures having a width of less than or equal to about 45 nanometers, wherein each pair of the gate structures that are positioned in and end-to-end manner are separated from each other by a line end-to-line end gap of less than or equal to about 193 nanometers; a first-metal layer formed above top surfaces of the gate structures within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward fiom top surfaces of the gate structures, the first-metal layer separated from the top surfaces of the gate structures by at least one insulator material, adjacentimetal layers in the stack of metal layers separated by at least one insulator material, wherein the first-metal layer includes first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, the first-metal structure layout shapes positioned in accordance with a first-metal vertical grid, the first-metal vertical grid including at least eight first-metal gridlines, each first-metal structure layout shape having a substantially rectangular shape and positioned to extend lengthwise in an x-direction in a substantially centered manner on an associated first-metal gridline, each of the first-metal structures having at least one adjacent first-metal structure positioned next \ to each of its sides at a y-coordinate spacing of less than or equal to 193 nanometers, wherein each pair of the first-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers; " at least six contact structures fonned within the region of the semiconductor chip, the at least six contact structures fonned in part utilizing corresponding at least six contact structure layout shapes as an input to a lithography process, the at least 23
six contact structures formed in physical and electrical contact with corresponding ones of at least six of the gate structures, each of the at least six contact structure layoutshapes having a substantially rectangular shape and a corresponding length greater than a corresponding width and with the corresponding length oriented in the x-direction, each of the at least six contact structure layout shapes positioned and sized to form its corresponding contact structure to overlap both edges of the top surface of the gate structure to which it is in physical and electrical contact, wherein at least one gate structure within the region is a first-transistor-type only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, wherein a total nmnber of first-transistor-type only gate structures within the region is equal to a total nmnber of second-transistor type-only gate structures within the region, wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form part of a logic circuit. 2. The semiconductor chip as recited in claim 1, wherein the region includes a second metal layer including second-metal structures fonned in part based on corresponding second-metal structure layout shapes used as an input to a lithography process, the second metal structure layout shapes positioned in accordance with a second-metal horizontal grid, the second-metalhorizontal grid including at least eight second-metal gridlines, each second-metal structure layout shape in the region having a substantially rectangular shape 24
and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated second-metal gridline, wherein at least eight of the at least eight second metal gridlines have at least one second-metal structure layout shape positioned thereon, wherein each of the second-metal stnlctures has at least one adjacent second-metal structure positioned next to each of its sides at an x-coordinate spacing of less than or equal to 193 nanometers, wherein each pair of the second-metal structures that are positioned in an end to-end manner are separated by a line end-to-line end gap, wherein the second-metal layer is positioned second in the stack of metal layers counting upward from the top surfaces of the gate structures. _ 5. The semiconductor chip as recited in claim 2, wherein the at least six contact structure layout shapes are positioned in accordance with a contact vertical grid, the contact vertical grid including contact gridlines extending in the x-direction, each of the at least six contact structure layout shapes positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated contact gridline, and at least two of the at least six contact structure layout shapes positioned to also extend lengthwise in the x direction in a substantially centered manner along an associated first-metal gridline. 6. The semiconductor chip as recited in claim 2, wherein each second-metal structure layout shape in the region is positioned next to at least one other second-metal structure layout shape on a first side in accordance with a second-metal pitch and is positioned next to at least one other second-metal structure layout shape on a second side in accordance with the second-metal pitch, wherein the second-metal pitch is measured in the x-direction and is equal to the gate pitch. 7. The semiconductor chip as recited in claim 6, wherein each second-metal structure layout shape in the region has a substantially equal width as measured in the x-direction. 25
9. The semiconductor chip as recited in claim 7, wherein the region has a size of 1930 nanometers as measured in the x-direction and a size of 1930 nanometers as measured in the y-direction. 10. The semiconductor chip as recited in claim 7, wherein the region includes a third metal layer including third-metal structures formed in part based on corresponding third metal structure layout shapes used as an input to a lithography process, the third-metal structure layout shapes positioned in accordance with a third-metal vertical grid, the third metal vertical grid including at least eight third-metal gridlines, each third-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated third metal gridline, wherein at least eight of the at least eight third-metal gridlines have at least one third-metal structure layout shape positioned thereon, wherein each third-metal structure in the region has at least one adjacent third-metal structure positioned next to each of its sides at a y-coordinate spacing of less than or equal to 193 nanometers, wherein each pair of the third-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap, wherein the third-metal layer is positioned third in the stack of metal layers counting upward from the top surfaces of the gate structures. 11. The semiconductor chip as recited in claim 10, wherein each second-metal structure layout shape in the region is positioned next to at least one other second-metal structure layout shape on a first side in accordance with a second-metal pitch and is positioned next to at least one other second-metal structure layout shape on a second side in accordance with the second-metal pitch, wherein the second-metal pitch is measured in the x-direction and is equal to the gate pitch. 26
15. The semiconductor chip as recited in claim l, wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein each diffusion region that forms part of at least one transistor within the region of the semiconductor chip has a substantially rectangular shape. ' 20. The semiconductor chip as recited in claim 1, wherein the region includes a second metal layer including second-metal structures formed in part based on corresponding second-metal structure layout shapes used as an input to a lithography process, the second metal structure layout shapes positioned in accordance with a second-metal horizontal grid, the second-metal horizontal grid including at least eight second-metal gridlines, each second-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated second-metal gridline, wherein at least eight of the at least eight second metal gridlines have at least one second-metal structure layout shape positioned thereon, wherein each second-metal structure in the region has at least one adjacent second-metal structure positioned next to each of its sides at an x-coordinate spacing of less than or equal to 193 nanometers, wherein each pair of the second-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap, wherein the second-metal layer ispositioned second in the stack of metal layers counting upward from the top surfaces of the gate structures, wherein the region includes a third-metal layer including third-metal structures formed in part based on corresponding third-metal structure layout shapes used as an input to a lithography process, the third-metal structure layout shapes positioned in accordance with a third-metal vertical grid, the third-metal vertical grid including at least eight third-metal gridlines, each third-metal structure layout shape 27
in the third-metal layer having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated third-metal gridline, wherein at least eight of the at least eight third-metal gridlines have at least one third#metal structure layout shape positioned thereon, wherein each third-metal structure in the region has at least one adjacent third-metal structure positioned next to each of its sides at a y-coordinate spacing of less than or equal to 193 nanometers, wherein each pair of the third-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap, wherein the third-metal layer is positioned third in the stack of metal layers counting upward from the top surfaces of the gate structures. 22. The semiconductor chip as recited in claim 20, wherein the at least four transistors of the first transistor type include a first transistor of the first transistor type, wherein the at least four transistors of the second transistor type include a first transistor of the second transistor type, wherein a gate structure that forms a gate electrode of the first transistor of the first transistor type and a gate structure that forms a gate electrode of the first transistor of the second transistor type are fonned to extend lengthwise along a same line, wherein no other transistor is positioned on the same line between the gate structures that fonn the gate electrodes of the first transistor of the first transistor type and the first transistor of the second transistor type, _ ' wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein a diffusion region of the first transistor of the first transistor type is electrically connected to a diffusion region of the first transistor of the second transistor type, \ 28
wherein the at least six contact structures include a contact structure substantially centered in the x-direction on the same line at a location between the diffusion regions of the first transistor of the first transistor type and the first transistor of the second transistor type. Z3. The semiconductor chip as recited in claim 22, wherein an electrical cormection between the diffusion region of the first transistor of the first transistor type and the l diffusion region of the first transistor of the second transistor type includes at least one first metal structure and at least one second-metal structure. 24. The semiconductor chip as recited in claim 23, wherein the gate electrode of the first transistor of the first transistor type is electrically connected to the gate electrode of the first transistor of the second transistor type. 29. A semiconductor chip, comprising: t gate structures formed within a region of the semiconductor chip, the gate structures formed in part based on corresponding gate structure layout shapes used as an input to a lithography process, the gate structure layout shapes positioned in accordance with a gate horizontal grid that includes at least seven gate gri/dlines, each gate structure layout shape having a substantially rectangular shape and positioned to extend lengthwise in a y-direction in _asubstantially centered manner along an associated gate gridline, each gate gridline having at least one gate structure layout shape positioned thereon, wherein adjacently positioned ones of the gate structures are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each of the gate structures having a vsddthof less than or equal to about 45 nanometers, wherein each pair of the gate structures that are positioned in an end-to-end mamier are separated from each other by a line end-to-line end gap of less than or equal to about 193 nanometers, wherein at least one gate structure within L7
the region is a first-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type, wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures VVltl'1iI1l;l’16 region, wherein each gate structure that fomis any transistor gate electrode within the region has a respective top surface in physical and electrical contact with a corresponding contact structure formed in part based on a corresponding contact structure layout shape having a substantially rectangular shape, wherein each contact structure that contacts a given gate structure that fonns any transistor gate electrode does not contact another gate structure, wherein each contact structure layout shape has a corresponding length greater than or equal to a corresponding width and is oriented to have its corresponding length extend in an x-direction, wherein each contact structure that contacts a corresponding gate structure has its corresponding contact structure layout shape positioned to overlap at least one edge of the gate structure layout shape of the corresponding gate structure, wherein the region includes at least four transistors of the frst transistor type and at least four transistors of the second transistor type that collectively fonn a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type JU
30. only gate structure within the region is included within the portion of the multiplexer or the portion of the latch. A semiconductor chip, comprising: gate structures formed within a region of the semiconductor chip, the gate structures formed in part based on corresponding gate structure layout shapes used as an input to a lithography process, the gate structure layout shapes positioned in accordance with a gate horizontal grid that includes a number of gate gridlines, each gate structure layout shape having a substantially rectangular shape and positioned to extend lengthwise in a y-direction in a substantially centered mamier along an associated gate gridline, each gate gridline having at least one gate structure layout shape positioned thereon, wherein adjacently positioned ones of the gate structures are separated from each other by a gate pitch of less than or equal to about 193 nanometers, each of the gate structures having a width of less than or equal to about 45 nanometers, wherein each pair of the gate structures that are positioned in an end-to-end manner are separated from each other by a line end-to-line end gap of less than or equal to about 193 nanometers, wherein at least one gate structure within the region is a first-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor ofa second transistor type, wherein at least one gate structure within the region is a second-transistor-type-only gate structure that forms at least one gate electrode of at least one transistor of the second transistor type and does not fonn a gate electrode of a transistor of the first transistor type, wherein a total number of first-transistor-type-only gate structures within the region is equal to a total number of second-transistor-type-only gate structures within the region, 3 l
wherein each of at least six gate structures within the region has a respective top surface in physical and electrical contact with a corresponding at least six contact structures that are formed in part based on corresponding contact structure layout shapes having a substantially rectangular shape, wherein each of the at least six contact structures is in physical contact with only one corresponding gate structure, wherein each contact structure layout shape of the at least six contact structures is centered in an x-direction on the gate structure layout shape of the gate structure with which it physical contacts, wherein each contact structure layout shape of the at least six contact structures has a corresponding length greater than or equal to a corresponding width and is oriented to have its corresponding length extend in an x direction, wherein each contact structure of the at least six contact structures has its contact structure layout shape positioned to overlap at least one edge of the gate structure layout shape of the gate structure that is contacted by the contact structure, , wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least one first-transistor type-only gate structure within the region is included within the portion of the multiplexer or the portion of the latch, wherein at least one second-transistor-type only gate structure within the region is included within the portion of the multiplexer or the portion of the latch. _ The 523 patent has 28 claims. As of the date of this order, claims 1-12, l4-20, 22-24, and 26-28 are asserted in this investigation, either as infringed or under the domestic industry technical 32
5 prong. The asserted claims read as follows (with the first instance of the agreed-upon terms in italics and the first instance of the disputed terms highlighted in bold): ' 5 A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, A the gate electrode features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process, the gate electrode feature layout shapes positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein all gate gridlines extend in a y direction, wherein adjacent gate giidlines are separated from each other by a gate pitch, each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon, wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of a first transistor type and does not fonn a gate electrode of a transistpr of a second transistor type, whereinat least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type; at least six gate contact structures fonned within the region of the semiconductor chip, the at least six gate contact structures fonned in part utilizing Claim 25 is not listed as asserted in the Notice of Investigation, 84 Fed. Reg. 9559, but it is implicated by dependent claim 26, which is asserted. ‘ 33
J corresponding at least six gate contact structure layout shapes as an input to a lithography process, wherein at least six gate electrode features within the region have a respective top surface in physical and electrical contact with a corresponding one of the at least six gate contact structures, each of the at least six gate contact structure layout shapes having a substantially rectangular shape with a corresponding length greater than a corresponding width and with the corresponding length oriented in an x-direction, each of the at least six gate contact structure layout shapes positioned and sized to overlap both edges of the gate electrode feature layout shape corresponding to the gate electrode feature to which it is in physical and electrical contact; and ' a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, wherein the first-metal layer includes first metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, wherein the first-metal structure layout shapes are positioned in accordance with a first-metal vertical grid, the first metal vertical grid including at least eight first-metal gridlines, wherein all first-metal gridlines extend in the x-direction, wherein at least eight of the at least eight first metal gridlines have at least one first-metal structure layout shape positioned thereon, each first-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner on an associated first-metal gridline, 34
wherein the region includes at least four transistors of the first transistor type and at least four transistors of the second transistor type that collectively fonn part of a logic circuit, wherein electrical connections within the logic circuit collectively include at least five first-metal structures corresponding to at least five first-metal structure layout shapes respectively positioned on at least five different first-metal gridlines, wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein some diffusion regions within the region of the semiconductor chip are physically and electrically contacted by at least one diffusion contact structure, the at least one diffusion contact structure formed in part utilizing corresponding at least one diffusion contact structure layout shape as an input to a lithography process, each diffusion contact structure layout shape within the region positioned in a substantially centered marmer along an associated diffusion contact gridline of a diffusion contact grid, the diffusion contact grid having a diffusion contact gridline-to-diffusion contact gridline spacing measured in the x-direction equal to the gate pitch. The semiconductor chip as recited in claim l, further comprising: a second-metal layer formed above the first-metal layer within the region of the semiconductor chip, the second-metal layer positioned second in the stack of metal layers counting upward from top surfaces of the gate electrode features, the second-metal layer separated from the first-metal layer by at least one insulator material, the second-metal layer including second-metal structures formed in part based on corresponding second-metal structure layout shapes used as an input to 11 lithography process, the second-metal layer layout shapes positioned in accordance 35
with a second-metal horizontal grid, the second-metal horizontal grid including at least eight second-metal gridlines, wherein all second-metal gridlines extend in the y-direction, wherein at least eight of the at least eight second-metal gridlines have at least one second-metal structure layout shape positioned thereon, each second-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated second-metal gridline, wherein some second-metal structures within the region are electrically connected to at least one first-metal structure within the region tluough at least one first-metal-to-second-metal via structure, each first-metal-to-second-metal via structure within the region formed in part based on corresponding first-metal-to second-metal via structure layout shape used as an input to a lithography process, each first-metal-to-second-metal via structure layout shape within the region positioned in a substantially centered manner along an associated second-metal gridline. 3. The semiconductor chip as recited in claim 2, wherein each first-metal structure layout shape in the region has a width measured in the y-direction that is either a first width or a second width, the second width different than the first width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the first width, the first-metal layer including at least one first-metal structure formed in part by a first-metal layout shape that has the second width. 4. The semiconductor chip as recited in claim 3, wherein at least one gate electrode feature within the region that forms at least one gate electrode of at least one transistor of the first transistor type and does not fonn a gate electrode of a transistor of the second 36
transistor type is electrically connected to at least one gate electrode feature within the region that forms at least one gate electrode of at least one transistor of the second transistor type and does not fonn a gate electrode of a transistor of the first transistor type through an electrical connection that includes at least one first-metal structure and at least one second metal structure. 5. The semiconductor chip as recited in claim 2, wherein the at least six gate contact structure layout shapes‘are positioned in accordance with a contact vertical grid, the contact vertical grid including contact gridlines extending in the x-direction‘,each of the at least six gate contact structure layout shapes positioned to extend lengthwise in the x direction in a substantially centered manner along an associated contact gridline, and at least two of the at least six gate contact structure layout shapes positioned to also extend lengthwise in the x-direction in a substantially centered mamier along a corresponding first metal gridline. 6. The semiconductor chip as recited in claim 2, wherein each first-metal structure layout shape in the region has a width measured in the y-direction that is one of a plurality of widths, the plurality of Widths including a first width and a second width, the first width smaller than the second width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the first width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the second width, wherein each first-metal-to-second-metal via structure that contacts a first-metal structure formed in part by a first-metal structure layout shape having the first width is formed at least in by a first-metal-to-second-metal via structure layout shape that is intersected by a corresponding first-metal gridline. 37
7. The semiconductor chip as recited in claim 6, wherein each first-metal-to-second metal via structure layout shape is intersected by a corresponding first-metal gridline. 8. The semiconductor chip as recited in claim 2, wherein adjacent second-metal gridlines are separated from each other by a second-metal pitch, the second-metal pitch equal to the gate pitch, the second-metal horizontal grid aligned with the diffusion contact grid. 9. The semiconductor chip as recited in claim 8, wherein all second-metal structure layout shapes in the region of the semiconductor chip have a same width as measured in the x-direction. 10. The semiconductor chip as recited in claim 9, further comprising: i a third-metal layer fonned above the second-metal layer within the region of the semiconductor chip, the third-metal layer positioned third in the stack of metal layers counting upward from top surfaces of the gate electrode features, the third metal layer separated from the second-metal layer by at least one insulator material, the third-metal layer including third-metal structures formed in part based on corresponding third-metal structure layout shapes used as an input to a lithography process, the third-metal layer layout shapes positioned in accordance with a third metal vertical grid, the third-metal vertical grid including at least eight third-metal gridlines, wherein all third-metal gridlines extend in the X-direction,wherein at least eight of the at least eight third-metal gridlines have at least one third-metal structure layout shape positioned thereon, each third-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated third-metal giidline, 38
wherein some third-rnetal structures within th_e region are electrically connected to at least one second-metal structure within the region through at least one second-metal-to-third-metal via structure: each second-metal-to-third-metal via structure within the region formed in part based on corresponding second-metal-to third-metal via structure layout shape used as an input to a lithography process, wherein at least one second-metal-to-third-metal via structure layout shape within the region is positioned in a substantially centered manner along an associated third metal gridline. ll. The semiconductor chip as recited in claim 10, wherein each second-metal-to-third metal via structure layout shape is intersected by a corresponding second-metal gridline. 12. The semiconductor chip as recited in claim 10, wherein each second-metal structure layout shape in the region is positioned next to at least one other second-metal structure layout shape on a first side at a second-metal pitch and is positioned next to at least one other second-metal structure layout shape on a second side at the second-metal pitch, wherein the second-metal pitch is measured in the x-direction and is equal to the gate pitch. 14. The semiconductor chip as recited in claim 1, wherein at least one of the at least six gate contact structures is in physical and electrical contact with, and is substantially centered in the x-direction on, a gate electrode feature within the region that forms at least one gateelectrode of at least one transistor of the first transistor type and that does not form a gate electrode of a transistor of the second transistor type. 15. The semiconductor chip as recited in claim l, wherein each of the at least six gate contact structure layout shapes is intersected by a corresponding gate gridline. 16. The semiconductor chip as recited in claim 1, wherein the first-metal layer includes at least eight first-metal structure layout shapes positioned on four first-metal layer 39
gridlines such that a different two of the at least eight first-metal structure layout shapes is positioned on each of the four first-metal layer gridlines, wherein each of the at least eight first-metal structure layout shapes is positioned next to and spaced apart from at least one other first-metal structure layout shape at a first-metal pitch. ' 17. The semiconductor chip as recited in claim 1, wherein the at least eight of the at least eight first-metal gridlines that have at least one first-metal structure layout shape positioned thereon are spaced at a first-metal pitch. 18. The semiconductor chip as recited in claim 1, further comprising: a second-metal layer formed above the first-metal layer within the region of the semiconductor chip, the second-metal layer positioned second in the stack of metal layers counting upward from top surfaces of the gate electrode features, the second-metal layer separated from the first-metal layer by at least one insulator \ material, the second-metal layer including second-metal structures fonned in part based on corresponding second-metal structure layout shapes used as an input to a lithography process, the second-metal structure layout shapes positioned in accordance with a second-metal horizontal grid, the second-metal horizontal grid including at least eight second-metal gridlines, wherein all second-metal gridlines extend in the y-direction, wherein at least eight of the at least eight second-metal gridlines have at least one second-metal structure layout shape positioned thereon, each second-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the y-direction in a substantially centered manner along an associated second-metal gridline; and a third-metal layer formed above the second-metal layer within the region of the semiconductor chip, the third-metal layer positioned third in the stack of metal 40
layers counting upward from top surfaces of the gate electrode features, the third metal layer separated from the second-metal layer by at least one insulator material, the third-metal layer including third-metal structures formed in part based on corresponding third-metal structure layout shapes used as an input to a lithography r process, the third-metal structure layout shapes positioned in accordance with a third metal vertical grid, the third-metal vertical grid including at least eight third-metal gridlines, wherein all third-metal gridlines extend in the x-direction, wherein at least eight of the at least eight third-metal gridlines have at least one third-metal structure layout shape positioned thereon, each third-metal structure layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in the x-direction in a substantially centered manner along an associated third-metal gridline. 19. The semiconductor chip as recited in claim 18, wherein each first-metal structure layout shape in the region has a width measured in the y-direction that is one of a plurality of widths, the plurality of widths including a first width and a second width, the first width smaller than the second width, the first-metal layer including at least one first-metal structure fonned in part by a first-metal structure layout shape that has the first width, the first-metal layer including at least one first-metal structure formed in part by a first-metal structure layout shape that has the second width, wherein each first-metal-to-second-metal via structure that contacts a first-metal structure formed in part by a first-metal structure layout shape having the first width is formed at least in part by a first-metal-t0-second-metal via structure layout shape that is intersected by a corresponding first-metal gridline. 20. The semiconductor chip as recited in claim 18, wherein some third-metal structures within the region are electrically connected to at least one second-metal structure within the 41 ' ,
region throughat least one second-metal-to-third-metal via structure, each second-metal-to third-metal via structure formed at least in part by a second-metal-to-third-metal via structure layout shape that is intersected by a corresponding second-metal gridline. 22. The semiconductor chip as recited in claim 18, wherein the at least four transistors of the first transistor type include a first transistor of the first transistor type, wherein the at least four transistors of the second transistor type include a first transistor of the second transistor type, wherein a gate electrode feature layout shape used to form a gate electrode feature that forms a gate electrode of the first transistor of the first transistor type and a gate electrode feature layout shape used to form a gate electrode feature that forms a gate electrode of the first transistor of the second transistor type are positioned to extend lengthwise along a same gate gridline, wherein no other transistor is positioned on the same gate gridline between the gate electrode feature layout shapes used to form the gate electrode features that form the gate electrodes of the first transistor of the first transistor type and the first transistor of the second transistor type, l wherein each transistor within the region of the semiconductor chip is formed in part by a corresponding diffusion region, wherein a diffusion region of the first transistor of the first transistor type is electrically connected to a diffusion region of the first transistor of the second transistor type, wherein the at least six gate contact structure layout shapes include a gate contact structure layout shape substantially centered in the x-direction on the sanie gate gridline at a location between the diffusion regions of the first transistor of the first transistor type and the first transistor of the second transistor type, _ wherein an electrical connection between the diffusion region of the first transistor of the first transistor type and the"diffusion region of the first transistor of 42 \
the second transistor type includes at least one first-metal structure and at least one second-metal structure, wherein the at least four transistors of the first transistor type and the at least four transistors of the second transistor type within the region collectively form part of an inverting two-to-one multiplexer. 23. The semiconductor chip as recited in claim 22, wherein adjacent second-metal gridlines are separated from each other by a second-metal pitch, the second-metal pitch equal to the gate pitch, the second-metal horizontal grid aligned with the diffusion contact grid. - 4 24. The semiconductor chip as recited in claim 23, wherein all second-metal structure layout shapes in the region of the semiconductor chip have a same width as measured in the x-direction. 25. The semiconductor chip as recited in claim 1, wherein the at least four transistors of the first transistor type are collectively separated from the at least four transistors of the second transistor type by an inner region that does not include another transistor. 26. The semiconductor chip as recited in claim 25, wherein at least one of the at least six gate contact structure layout shapes is positioned over the imier region and fonns a gate contact structure that is in physical and electrical contact with, and is substantially centered in the X-directionon, a gate electrode feature within the region that forms at least one gate electrode of at least one transistor. 27. _ A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, the gate electrode features formed in pan based on corresponding gate electrode feature layout shapes used as an input to a lithography process, the gate electrode ‘L3
1 feature layout shapes positioned in accordance with a gate horizontal grid that includes at least seven gate gridlines, wherein adjacent gate gtidlines are separated from each other by a gate pitch, each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in a y direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon, wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that fonns at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of the second transistor type and does not form a gate electrode of a transistor of the first transistor type; p a number of gate contact structures fonned within the region of the semiconductor chip, the gate contact structures fonned in part utilizing corresponding gate contact structure layout shapes as an input to a lithography process, wherein each gate electrode feature that forms any transistor gate electrode within the region has a respective top surface in physical and electrical contact with a corresponding gate contact structure formed at least in part from a gate contact structure layout shape having a substantially rectangular shape, wherein each gate contact structure that contacts a given gate electrode feature that forms any transistor gate electrode does not contact another gate electrode feature, wherein any gate contact structure layout shape that has a corresponding length greater than or equal 44
to a-corresponding width is oriented to have its corresponding length extend in an x direction; and I a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, the first-metal layer including first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, wherein each transistor within the region is fonned in part by a corresponding diffusion region, each dlffl1Si0!1region formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process, wherein each diffusion region that fonns part of any transistor within the region is formed at least in part by a corresponding diffusion region layout shape that has a substantially rectangular shape, wherein the region includes at least four transistors of the first transistor type and at least. four transistors of the second transistor type that collectively form a portion of a multiplexer or a portion of a latch, wherein at least two first-metal structures form portions of one or more electrical connections within the multiplexer or the latch. A semiconductor chip, comprising: gate electrode features formed within a region of the semiconductor chip, the gate electrode-features formed in part based on corresponding gate electrode feature layout shapes used as an input to a lithography process, the gate electrode 45 a
feature layout shapes positioned in accordance with a gate horizontal grid that includes a number of gate gridlines, wherein adjacent gate gridlines are separated from each other by a gate pitch, each gate electrode feature layout shape in the region having a substantially rectangular shape and positioned to extend lengthwise in a y direction in a substantially centered manner along an associated gate gridline, wherein each gate gridline has at least one gate electrode feature layout shape positioned thereon, wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type, wherein at least one gate electrode feature layout shape within the region corresponds to a gate electrode feature that forms at least one gate electrode of at least one transistor of the second transistor type and does not fonn a gate electrode of a transistor of the first transistor type; a number of gate contact structures formed within the region of the semiconductor chip, the gate contact structures formed in part utilizing corresponding gate contact structure layout shapes as an input to a lithography process, wherein each of at least six gate electrode features within the region has a respective top surface in physical and electrical contact with a corresponding gate contact structure formed at least in part from a gate contact structure layout shape having a substantially rectangular shape, wherein each gate contact structure is centered in an x-direction on the gate electrode feature with which it physical contacts, wherein each gate contact structure layout shape that has the substantially rectangular shape has a corresponding length greater than or equal to a corresponding width and is oriented to have its corresponding length extend in the x-direction, 46
wherein each of the number of gate contact structures is in physical contact with only one of any of the gate electrode features; and ' ' a first-metal layer formed above top surfaces of the gate electrode features within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate electrode features, the first-metal layer separated from the top surfaces of the gate electrode features by at least one insulator material, the first-metal layer including at least two first-metal structures formed in part based on corresponding first-metal structure layout shapes used as an input to a lithography process, the at least two first-metal structures forming portions of one or more electrical connections within the region of the semiconductor chip, wherein each transistor within the region is formed in part by a corresponding diffusion region, each diffusionregion formed in part utilizing a corresponding diffusion region layout shape as an input to a lithography process, wherein each diffusion region that forms part of any transistor within the region is formed at least in part by a corresponding diffusion region layout shape that has a substantially rectangular shape. CLAIM CONSTRUCTION A Construction of the Agreed-Upon Claim Term Prior to the Markman hearing, the Parties reached agreement regarding the construction of one term lI1the asserted claims: C . ' Claim Term Present in Asserted Claims Agreed Construction “a lithography process” ’335 Patent at claims 1, 2, 10, 'Plain and ordinary meaning; 20, 29, 30 i.e., “a process by which a pattem is imprinted on a resist 47"
’523 Patent at claims 1, 2, 10, or semiconductor wafer using 18, 27, 28 light as a mask” (JC, App’x A at 1.) V B. Construction of the Disputed Claim Terms 1. “linear [conductive segment(s) I conductive structure(s)]” As shown in the chart below, this term is found in the claim language of the now terminated ’966 and ’012 patents; however, it is not fotmd in the claim language of the remaining Asserted Patents. In its motion to terminate, Tela contends that this term no longer needs to be construed. (EDIS Doc. ID 688619.) Respondents and the Staff, however, contend that the claim language still needs to be construed because the term applies even to the claims of the remaining Asserted Patents. (EDIS Doc. IDs 689665, 689247; see RRMB at 14-15; SMB at 19-22.) The Parties proposed the following constructions: Claims Relevant ’966 patent at claims 2, 3, 6, 7, 9-12, 21-23, 25-27, 29-30, 32-33 ’0l2 patent at claims 2-4, 6-8, ll-16, 18-21, 23-28, 31-35 Tela Respondents Staff linear: “a 3D conductive structure having a rectangular shape of a given width defined in a plane parallel to a top surface of the substrate and defined to have a length that extends in one direction” linear conductive segment / linear: “having a consistent vertical cross-section shape and extending in a single direction over the substrate” linear conductive segment(s) / linear conductive structure: linear conductive structures: No further construction required beyond the ‘ construction of “linear.” Plain and ordinary meaning. no additional construction needed beyond “linear” “linear-shaped feature(s), in a ' given layer, that is a 3-D conductive structure characterized as having a consistent vertical cross section shape and extending straight without bends in a single lengthwise direction over the substrate, and having a 2-D rectangular shape of a given width defined in a plane parallel to atop surface of the substrate” (JC, App’x A at 2-4.) 48
/ ' ~ ' Respondents and the Staff advance five basic arguments for why this term should be read into claims that do not explicitly contain it. First, Respondents and the Staff point out that Tela initially proposed a construction of another claim term (“gate pitch”) which seemingly incorporated this term, but later “reneged from its own construction.” (RIMB at 23; see SMB at 20.) This point would be more persuasive had Tela changed its position after the completion of, or in the midst of, briefing on claim construction. Instead, Tela changed its position before it had to commit to a position, and the argument is essentially beside the point. 1 ' Second, the Staff correctly observes that the specification emphasizes the importance of all chip features above the diffusion region possessing “linear” shapes. (SMB at 19 (quoting ’523 patent at 10:4-5 (“in each layer other than the diffusion region layer 203, only linear-shaped features are allowed”) (emphasis omitted)).) But there is generally no language in the claims corresponding to “linear,” so it is improper to import that limitation from the specification. Evenia large number of references to the importance of linearity—the Staff counts over 50 such references—are not alone enough to justify limiting the claims as the Staff proposes. (SMB at 19-20.) And even assuming that the patentees acted as their own lexicographers, as the Staff contends, that lexicography at most defines the term “linear,” which, again, is not found in the remaining claims in suit. (SMB at 14.) Third, Respondents argue for the term’s general applicability based on the prosecution history of the ’523 patent, which includes the following statement: “[t]he gate structures are defined as rectangular-shaped, i.e., linear shaped, features extending in a parallel relationship across the dynamic array in the second reference direction (y).” (RIMB at 22 (quoting RIMB, Ex. 18 at 17 (emphasis omitted)).) This argument has two defects. First, even though the ’523 patent shares a specification with the ’334 and ’335 patents, that the patentee’s representation applies to the former patent does not necessarily mean that it also applies to the latter two patents, which both issued (49
before the ’523 patent. Second, the representation appears to be gratuitous; nothing in the _ D prosecution history suggests that it was necessary for allowance, or intended as a disclaimer. Fourth, Respondents contend that where the remaining claims in suit use the term “rectangular,” that tenn should be read as “linear.” (RRMB at 14.) Certainly the tenn “rectangular” is found throughout the claims of the ’334, ’335, and ’523 patents, and applies to various claimed features. (E.g., ’523 patent at 24:61 (“gate electrode feature”), 31:15 (“gate contact structure”), 32:56 (“diffusion region layout shape”).) But there is no evidence the patentees acted as their own lexicographers in connection with the term “rectangular,” and as explained above, the prosecution history does not mandate any deviation from the terrn’s plain and ordinary meaning. Most importantly, even assuming that the term “linear” is defined by the specification—narnely, “having a consistent vertical cross-section shape and extending in a single direction over the substrate”—the plain and ordinary meaning of “rectangular” is unquestionably different and simpler. (’523 patent at 10:7-8.) p V Fifih, Respondents argue that in a parallel litigation before the United States District Court for the Northem District of California, the court’s tentative claim construction “illustrate[s] that construing ‘linear’ is required to define the scope” of other claim terms. (EDIS Doc. ID 689665 at 2.) But again, there is generally no language in the claims of the remaining Asserted Patents corresponding to “linear,” and in any event the District Court’s claim construction is not binding in this investigation. Accordingly, “linear [conductive segment(s) / conductive stmcture(s)]” is not an element of any claim of the remaining Asserted Patents, and is therefore not construed. 2. “gate electrode” The Parties disagree on the proper claim construction and have proposed the following constructions: 50
Relevant ’334 patent at claims 1, 22, 24, 29, 30 Claims ’335 patent at claims 1, 22, 24, 29, 30 ’523 patent at claims 1, 2, 4, 10, 14, 18-22, 26-28 _ Tela 9 ' Respondents Staff “portion of linear conductive “a portion of a conductive “portion of a linear-shaped segment (’966 and ’0l2 shape in the gate layer that feature in the gate electrode Patents) /gate structure (’334 extends over and parallel with layer that is used to control and ’335 Patents) / gate a diffusion region to form a the flow of electrical current electrode feature (’523 Patent) transistor gate” between the source and drain used to control the flow of diffusion regions of a electrical current between the ‘ transistor” source and drain regions of a transistor” (JC, App’x A at 5-6.) References to gates, components of gates, and the structure of gates varies between the Asserted Patents. In the ’334 and ’335 patents, the claims use the term “gate structure” in reference to an element that, in some instances, forms a “gate electrode.” (E.g., ’334 patent at 30:18-19; ’335 patent at 31:4.) Inthe ’523 patent, by contrast, the claims use the tenn “gate electrode feature,” seemingly in reference to the same element, because it “forms at least one gate electrode.” (E.g., ’523 patent at 24:67-25:1.) The specification uses the tenns “gate electrode” and “gate electrode feature,” as well as “gate electrode track,” but not “gate structure.” (E.g., ’523 patent at 9:43-45 (“gate electrode features 207 are defined above the diffusion regions 203 to form transistor gates”); 15:9-12 (“the gate electrode tracks extend over the substrate . . . the gate electrodes may extend through the boundaries at the top and bottom of the cells”).) The Parties apparently agree, at least implicitly, that “gate structure” and “gate electrode feature” areisynonymous, and this is supported by the intrinsic evidence. (CIMB at 24; RJMB at 21; SMB at 22 & n.11.) Although a gate is made of two parts, a metal and an oxide, and the oxide necessarily is not itself an electrode (because it does not conduct electricity), both the metal part of 51
the gate alone and the metal/oxide combination could be considered electrodes. (See Tutorial at ll 13.) So I find that the terms “gate electrode feature,” “gate structure,” and “gate electrode track” all refer to the same structure, which forpresent purposes I call the “gate electrode feature.” So understood, the parties further agree that for a “gate electrode feature” to carry out its principal function, that is, to form a transistor gate, at least a portion of it must extend over a diffusion region and control the cun'ent flowing between the source and drain. (CIMB at 28-29; RIMB at 26; SMB at 27.) This is supported by the specification. (’523 patent at 9:43-45 (“gate electrode features 207 are defined above the diffusion regions 203 to fonn transistor gates).) So a “gate electrode” is simply that portion of a “gate electrode feature” which actually forms a transistor gate; it is redundant to add limitations conceming sotuce, drain, and diffusion region. Respondents and the Staff urge a construction limiting the “gate electrode” to a particular shape—for Respondents, a conductive shape, and for the Staff, a linear shape. <Respondents also argue for a construction limiting the “gate electrode” to a “gate layer” parallel with the diffusion region. And the Staff advances a construction limiting the “gate electrode” to a gate electrode layer. These requirements are inappropriate because they are not even arguably within the plain and ordinary meaning of a “gate electrode.” Although the specification refers to a “gate electrode layer,” nothing in the claim language suggests that the “gate electrode” is limited to such a layer. (’523 patent at 14:20.) The term “gate layer” is mentioned nowhere in the intrinsic evidence, and the term is therefore ambiguous. And the tenn “linear” does not apply to “gate electrode,” nor does the claim language suggest that a “gate electrode” must be some other shape. i ' Accordingly, “gate electrode” is construed as “that portion of a gate electrode feature that fonns a transistor gate.” ’ 52
/ 3. “gate electrode feature(s) / gate structure(s)” " The Parties disagree on the proper claim construction and have proposed the following constructions: t A Relevant ’334 patent at claims 1, 2, 4, 10, 20, 22, 29, 30 Claims ’335 patent at claims l, 2, 4, 10, 20, 22, 29, 30 ’523 patent at claims 1, 2, 4, 10, 14, 18, 22, 26-28 Tela I Respondents I Staff “feature that can form a “linear-shaped feature “linear/-shapedfeature that can gate(s) of a transistor(s) comprising a gate(s) of a form a gate(s) of a defined below the gate transistor(s) or a dummy gate?’ transistor(s) defined below contact” the gate contact layer” (JC, App’x A at 4-5.) l A As reflected in’the table above, and as stated by Tela, the principal interpretive dispute. “appears to be whether the claimed ‘gate electrode feature’ and ‘gate structure’ require a. ‘linear shaped feature’ as interpreted by Respondents and Staff." (CIMB at 24.) As explained above, the term is inapplicable. _ Tela and the Staff further contend that the “gate electrode features” and “gate structures” must be below the “gate contact” or “gate contact layer.” Tela justifies this limitation in light of claim language requiring it. (See CIMB at 25-26 (citing ’523 patent at cl. 1; ’334 patent at cl. l; ’335 patent at cl. 1)) and Figure 2 of the ’334, ’335, and ’523 patents (see id. at 26 (citing ’334 patent at Fig. 2).) The Staff justifies the limitation by reference to Figure 2 of the specification. (SMB at 23.) I disagree that these details should be part of the construction primarily because, as Tela acknowledges, the presence of electrode contacts positioned above the “gate electrode features” or “gate structures” is already recited in the claims. (See CIMB at 25-26.) To place it within the construction of “gate electrode features” or “gate structures” is therefore redundant. Moreover, it is improper to import a limitation from the specification (such as that shown in Figure 2) into the 53 ‘
claims without better support for that importation. Kara Tech. Inc. v. Stamps.com 1nc., 582 F.3d 1341, 1348 (Fed. Cir. 2009) (“The patentee is entitled to the full scope of his claims, and we will not limit him to his preferred embodiment or import a limitation from the specification into the claims.”). " Lastly, the Parties dispute the proper method for capturing the fact that a “gate electrode feature” or “gate structure” does not necessarily have to act as a transistor gate at every, or even any, point along its length. For example, “Respondents’ construction recites that the claimed feature comprises a gate or a dummy gate; Tela and Staff appear to attempt to capture the same concept 5” using the language ‘can form a gate. (RIMB at 21.) The construction of “gate electrode” is helpful here. As noted, a “gate electrode” is “that portion of a gate electrode feature that forms a transistor gate.” It follows that a “gate electrode feature” that does not fonn a transistor gate at any point ’ g along its length is a dummy gate, that is, one that is designed to form a gate but does not. _ It further follows that a feature or structure that forms a transistor gate over some but not all of its length is a feature that “can fonn” a transistor gate, and does, as Tela and the Staff contend. Respondents’ proposed construction, by using the term of art “comprising,” succinctly characterizes 65 >7 this aspect of the element. (RIMB at 24.) Specifically, a feature that comprises a transistor gate is a feature that fonns a transistor gate over at least some of its length. However, in light of the withdrawal of the ’966 and ’0l2 patents, the definition of a dummy gate is otherwise moot. The_’966 and ’0l2 patents include claims covering dummy gates, that is, gate electrode features that do not fonn a transistor gate any point along their lengths. (’966 patent at 27:66-67; ’0l2 patent at 33:19-20.) The ’334, ’335, and ’523 patents do not, however; every claim of these patents reciting the limitation “gate electrode feature that . . . does not form a gate electrode” is accompanied by the limitation “forms at least one gate electrode” of the other transistor type. For instance, claim l of the ’523 patent recites: “a gate electrode feature that forms at least 54
one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode of a transistor of a second transistor type.” (’523 patent at 24:67-25:3.) Therefore, every claimed “gate electrode feature” in suit that can form a transistor gate actually does, and the dispute over how to precisely define a “gate electrode feature” that does not fonn a transistor gate at all need not be resolved. Accordingly, a “gate electrode feature” or “gate structure” is construed as a “feature comprising a transistor gate.” 4. “diffusion region(s)” 1 The Parties disagree on the proper claim construction and have proposed the following constructions: Relevant ’334 patent at claims 15, 22, 23, 29, 30 Claims ’335 patent at claims l5, 22, 23 ’523 patent at claims 1, 22, 27, 28 Tela I Respondents I Staff “selected portions of the “selected portions of the “selected portion(s) defined in substrate within which substrate within which the base substrate located " impurities have been impurities have been below the gate electrode introduced to form the source introduced to form the source layer within which impurities or drain of a transistor” or drain of a transistor” are introduced in order to form the source and/or drain of a transistor” (JC, App’x A at 10-12.) 4 _ As shown in the above table, Tela and the Respondents agree on this term, with the Staff offering a modified construction that adds two requirements: (1) the referenced substrate is the “base” substrate; and (2) such substrate is below the gate electrode layer. The Staff supports adding these details because the specification states that “[d]iffusion regions 203 are defined in the base substrate 201,” and “gate electrode features 207 are defined above the diffusion regions 203 to fonn 55
transistor gates.” (’523 patent at 9:33-45.) But calling the substrate “base” is redundant; there is only one substrate, so it is necessarily the “base substrate.” And the term “diffusion region” by itself is not accompanied in the claims by any particular layer requirement, so there is no reason to import such a requirement from the specification into the claims. The remaining proposed construction is otherwise supported by the specification and sufficiently tied to the plain and ordinary meanings of “diffusion” and “region.” (’523 patent at 9:35-42 (“diffusion regions 203 represent selected regions of the base substrate 201 within which impurities are introduced” and “diffusion contacts 205 are defined to enable connection between source and drain diffusion regions 203”).) Accordingly, “diffusion region(s)” is construed as “selected portions of the substrate within which impurities have been introduced to form the source or drain of a transistor.” 5. “[gate horizontal / first-metal vertical grid]; [second-metal horizontal] grid; [contact vertical] grid; [third-metal vertical] grid; [diffusion contact] grid” _ The Parties disagree on the proper claim construction and have proposed the following constructions: ' Relevant ’334 patent at claims 1, 2, 5, 10, 20, 22, 29, 30 Claims ’335 patent at claims 1, 2, 5, 10, 20, 29, 30 ’523 patent at claims 1, 2, 5-8, 10, 11, 15-20, 22, 23, 27, 28 Tela ' Respondents I Staff “virtual projected “projected grid used during projected grid used during gridlines alongwhich [gate fabrication of a given layer fabrication of a given layer /metal / contact] features are along which [gate / metal / along which [gate / metal / defined” contact] linear-shaped features contact] linear-shaped features ' are formed” are formed” (JC, App’x A at 12-13.) , 56
\ As reflected in the table above, one of the Parties’ disputes over the term “grid,” with its various modifiers, again concems the requirement of “linear-shaped features.” And again, the limitation is inapplicable. I ‘ A second dispute is over how the grid must be “projected,” although the Parties agree that such a projection is required. The Staff argues that the grid is “an actual projection of a grid,” while Tela argmesthat the grid projection is virtual. (SMB at 37 (emphasis omitted); CIMB at 40; CRMB at 20.) The Staff cites one passage of the specification: “the base grid is projected in a substantially consistent manner with respect to position on each layer of the dynamic array, thus facilitating accurate feature stacking and alignment.” (Id. at 37-38 (citing ’334 patent at 13:9-13).) But in the preceding sentence the specification makes clear that the grid is “not physically definedas part of the dynamic array,” and instead “can be considered as a projection on each layer of the dynamic array.” (’334 patent at 13:7-9.) It may be true that, just as a “movie projected on a screen is not physically a part of the screen,” an actual projection of a grid during fabrication is also not physically part of the dynamic array, but this observation from Respondents sheds no light on whether the specification requires an actual projection. (RRMB at 23.) ’ More to the point, it is what the claims require that controls here, but the claims do not even require a projection, actual or virtual. And in the ’335 and ’523 patents, where “grid” is used, the claims typically refer to “layout,” and in many instances to “layout shapes used as an input to a lithography process.” (E.g., ’335 patent at 30:5-6; ’523 patent at 24:54-56.) The term “layout” by If itself, and especially combined with “input to a lithography process,” suggests that if the grid is “projected” if at all, it is not actually projected onto a wafer. (See ’523 patent at 8:8-9 (“addition of margin in the set of design rules assists with the layout portions”).) The claims of the ’334 patent are even less specific, because they typically refer to “gate structures positioned in accordance with a . . . grid,” with no limitation on how that is achieved. (E.g., ’334 patent at 30:4-5.) . 57
)
In short, the claims (as opposed to the specification) do not require projection of a “grid”
and do not require such projection to be either virtual or actual. Nonetheless, because the Parties
agree that the “grid” is projected, and this requirement is supported by the specification, it will be
incorporated into the term’s construction. ("S23 patent at 11:18-19 (“the base grid can be
considered as a projection on each layer of the dynamic array”).)
The third dispute between the Parties pertains to when the grid is used, specifically, whether
during design or fabrication; this dispute overlaps with the Parties’ dispute over the construction of
“gridline(s).” (RIMB at 41 (“[t]he first dispute (formed vs. defined) is addressed below in the
context of the ‘gridlines’ term”); CRMB at 22.) Nothing in the claim language explicitly addresses
this issue, but again, in the ’335 and ’523 patents, where “grid” is used the claims typically refer to
“layout,” and in many instances to “layout shapes used as an input to a lithography process,” where
the “layout shapes are positioned in accordance with a . . . grid.” (E.g., ’335 patent at 30:5-8; ‘523
patent at 24:54-56.) The various features are then “formed in part based on [the] layout shapes.”
(E.g., ’335 patent at 30:4-5; ’523 patent at 24:52-54.) That the claims require positioning the shapes,
as opposed to the features, and then forming the features based on the shapes, implies that the “grid”
is used during the layout process, that is, before fabrication. This is consistent with the layout stage
of integrated circuit manufacturing described by Respondents’ expert. (See RIMB, Ex. 6 at 6 (“A
layout represents the size, shape, and spacing guidelines for a given layer in a transistor”); see also
Comp. Tutorial at 2 (describing “Layout & Simulation” as occurring before “Fabrication &
Verification”).) Nothing in the claim language, however, bars the grid from also being used during
fabrication or any other stage in the manufacturing process.
In the ’334 patent, by contrast, the claims do not include the word “layout” at all. Instead,
the various claimed “structures” must be “positioned,” either “in accordance with a . . . grid,” or
“on . . . gridlines,” or “along a . . . gridline.” (E.g., ‘334 patent at 30:4-5, 31:4-5, 31:43-48.) As
58 iI Respondents point out, the prosecution history is to similar effect. (RIMB at 43-44 (quoting RIMB, Ex. 20 at 24).) In response, Tela argues that formation of a structure is not the same as placement, or positioning of shapes. (CRMB at 21-22.) I disagree. “Positioning” a “structure,” as opposed to a shape, is most naturally understood as building or forming a structure in a particular location. Therefore, in the ’334 patent the “grid” is used, that is, projected, during fabrication. Nothing in the claim language bars the grid from also being used during layout or any other stage of the manufacturing process, however. _ u Lastly, the parties do not dispute the meaning of “grid” beyond these three disagreements, so the term will not otherwise be construed. Accordingly, for the ’335 and ’523 patents, “grid” isiconstrued as “projected gridlines used at least during the layout stage of integrated circuit manufacturing,” and for the ’334 patent, “grid” is construed as “projected gridlines used at least during the fabrication stage of integrated circuit manufacturing.” 6. f‘[gate./ metal I contact] gridline(s)” The Parties disagree on the proper claim construction and have proposed the following constructions: . . Relevant ’334 patent at.claims 1, 2, 5, 10, 20, 22, 29, 30 Claims ' ’335 patent at claims 1, 2, 5, 10, 20,29, 30 ‘ ’523 patent at claims 1, 2, 5-8, ll), 11, 15-20, 22, 23, 27, 28 Tela I Respondents Staff “virtual projected lines along “gridline(s) along which [gate “projected lines on a which [gate/metal/contact] / metal / contact] structures corresponding grid used features are defined” are formed”, during fabrication along which [gate / metal / I contact] linear-shaped features are fonned” 59
(JC, App’x A at 13-14.) All of the Parties’ disputes over this term are addressed above, in construing the term “grid.” The plain and ordinary meaning of “gridline” is otherwise simply one of the lines making up a “grid.” I - Accordingly, “gridline” is construed as “one of the lines making up a grid.” 7. “contact structure(s) / gate contact structure(s)” ' -The Parties disagree on the proper claim construction and have proposed the following constructions: Relevant ’334 patent at claims 1, 5, 22, 29, 30 Claims ’335 patent at claims 1, 5, 22, 29, 30 ’523 patent at claims 1, 5, 14, 15, 22, 26-28 Tela Respondents Staff “linear conductive structure(s) in a gate contact layer above and separate from the gate layer and below and separate from interconnect layers” “a structure that passes through an insulator to enable connection of the gate electrode feature to the overlying metal conduction lines” - “linear-shaped feature, separate from a gate electrode feature, that enables connection of the gate electrode feature to the overlying metal conduction lines, where the linear-shaped feature is oversized in the direction perpendicular to the gate electrode feature and is located above the gate electrode layer” ~ (JC, App’x A at 7-9.) . As with the other disputed claim terms, to the extent a “contact structure” or “gate contact structure” must be linear, the limitation is inapplicable. In any event, these features are less likely to possess the “linear-shaped” limitation because the claim language -defines their. shapes. 60
(E.g., ’334 patent at 30:59-64 (“a substantially rectangular shape . . . positioned and sized to overlap both edges” of the associated gate structure); ‘532 patent at 25:19-24 (same).) Indeed, the claim language is generally inconsistent with all three proposed constructions. _Forexample, nothing in the claim language requires passage through an insulator, as Tela proposes. The only insulator-related limitation in the claims relevant to these claim terms is that the first-metal layer must be “separated from the top surfaces of the gate electrode features by at least one insulator material.” (’523 patent at 25:31-33; see ’335 patent at 30:27-29.) And the function of a “contact structure” is to connect a gate and the overlying metal conduction lines, as both Tela and the Staff indicate in their proposed constructions, but neither that function nor a structure that would perform that function is recited in the claim language. The Staff”s proposed limitation that the “contact structure” be “oversized” is already captured by the “overlap both edges” language, and therefore redtmdant. (’335 patent at 30:61; ’532 patent at 25:23-24.) The limitation proposed by Respondents and the Staff, that the “contact structure” be “in a gate contact layer” or “located above the gate electrode layer” is already captured by the requirement that the “top surface” of the “gate electrode features” be “in physical and electrical contact” with the “contact structures,” and is also redundant. (’532 patent at 25:14-18; see ’335 patent at 30:60-63 (the “contact structure” must “overlap both edges of the top surface”).) Accordingly, because none of the Parties’ proposed constructions are supported by the claim language, I decline to construe the term “contact structure” or “gate contact structure” at present. " 8. “gate pitch” The Parties disagree on the proper claim construction and have proposed the following constructions: Relevant ’334 patent at claims 1, 6,11, 29, 30 Claims ’335 patent at claims 1, 6, 11, 29, 30 61
’523 patent at claims 1, 8, 12, 23, 27, 28 Tela T Respondents Staff “center-to-center separation “center-to-center separation “center-to-center separation distance between adjacent distance between adjacent distance between adjacent gate features” linear-shaped gate linear-shaped gate features” features” (JC, App’X A at 15-16.) The Parties’ proposed constructions are identical, except that Respondents and the Staff add the requirement that the “adjacent . . . gate features” be “linear-shaped.” As noted, this limitation is inapplicable. The proposed construction is otherwise supported by the specification and sufficiently reflects the term’s plain and ordinary meaning. (’523 patent at 8:61 (“pitch” refers to “layout feature spacing”); 17:52 (“pitch (center-to-center spacing)”).) . Accordingly, “gate pitch” is construed as ‘icenter-to-center separation distance between adjacent gate features.” 9. “eachfirst-metal structure in the region having at least one adjacent first metal structure positioned next to each of its sides in accordance with a y coordinate spacing of less than or equal to 193 nanometers” The Parties disagree on the proper claim construction and have proposed thefollowing constructions: . Relevant ’334 patent at claim 1 ' Claims _ J ’335 patent at claim 1 Tela Respondents Staff Plain and ordinary meaning. Indefinite. Indefinite. (JC, App’x A at 16-17.) Unlike the previous terms, here, Respondents and the Staff contend the limitation “each first metal structure in the region having at least one adjacent first-metal stmcture positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers” is 62 ~
»
indefinite because one of ordinary skill in the art would not be able to ascertain its scope with
reasonable certainty. (RIMB at 49 (citing Nautilus, 572 U.S. at 910); SIMB at 42-43.) Central to
this claim are two premises: (1) that “all of the first-metal structures in the region have adjacent
first-metal structures on both of their sides”; but (2) “there are necessarily two first-metal
structures—at the edges of the region—that only have another first-metal structure adjacent to one
of their sides.” (RIMB at 49 (emphasis in original); see SMB at 44-45.) Respondents reason, “‘each
first-metal structure in the region has at least one adjacent first-metal structure positioned next to
each of its sides’ is thus seemingly impossible to satisfy.” (Id. at 49-50; see SMB at 44-45.)
Respondents use the following demonstrative to show this point, explaining “blue shapes have
shapes next to both of their sides; but the yellow highlighted shapes at the edge of the region cannot”:
t . - e V A ~ “TIT V *_»“"‘t;~L;-.:;};j§15§§;~i?$*{¢h=#¥:1t&%¢§éi§I
I’ - W I W W 5,7,1” 1:‘ 7-'1.>~»<'~r5'-_’<1'31»%_1§-:{~\#,:¢§v~';r<. *3
f_'_ T"~’?W”""77” -'1:
. ~~ w..".-<-‘.~.~._'~:- '1: V‘
7* ' » ' ‘*1’.-\l‘<".*:§¢'-‘5,;'5-*"‘J,r.~r:w"‘W"*“'-1».
(RIMB at 49-50.)
Respondents’ logic actually require a third, unspoken premise—that the “adjacent first-metal
structure(s)” recited in the limitation (shown in yellow above) must also be in the “region.”
Importantly, this premise distinguishes claim 1 of the ’335 patent from claim I of the ’334 patent.
The introduction of the “region” claim term, and “first-metal layer” term, along with the full
limitation at issue here reads:
_ l. A semiconductor chip, comprising:
gate structures formed within a r_egi0nof the semiconductor chip
63_ ) a first-metal layer formed above top surfaces of the gate structures within the region of the semiconductor chip, the first-metal layer positioned first in a stack of metal layers counting upward from top surfaces of the gate structures, the first-metal layer separated from the top surfaces of the gate structures by at least one insulator material, adjacent metal layers in the stack of metal layers separated by at least one insulator material, wherein the first-metal layer includes first metal structures positioned in accordance with a first-metal vertical grid, the first-metal vertical grid including at least eight first-metal gridlines, each first-metal structure in the region having a substantially rectangular shape and positioned to extend lengthwise in an x-direction in a substantially centered manner on an associated first-metal gridline, eachfirst-metal structure in the region having at least one aajacent first-metal structure positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers, wherein each pair of first-metal structures that are positioned in an end-to-end manner are separated by a line end-to-line end gap of less than or equal to about 193 nanometers; and (’334 patent at cl. 1 (emphasis added); see ’335 patent at cl. 1.) As recited in this excerpt, the term “region” is not itself specified as beginning or ending at any point. It merely denotes some subsection or portion of the overall “semiconductor chip.” As additionally recited, there are “gate structures” within this region, but the “first-metal layer” is not recited as existing entirely within the region—all that is stated is that the layer is “formed above the top surfaces” of those gate structures (which happen to exist within the unspecified “region”). Thus, when claim 1of the ’334 patent and claim l of the ’335 patent later introduce “wherein the first-metal layer includes first-metal structures,” there is no reason to understand these first metal structures as necessarily being within the “region.” They are simply part of the “first-metal layer” which itself is so far only defined as existing “above the top surfaces” of the gate electrodes within the region. Therefore, at this point in the claim language, the recited “first metal structures” may be inside or outside the “region.” Contrary to the contentions of Respondents and the Staff, there is no further language requiring all “first-metal structures” to be within the “region.” Rather, 64
the claim only recites “each first-metal structure in the region.” (’334 patent at cl. 1 (emphasis added).) I understand this language to simply mean that at least one first-metal structure must be in the region. The challenged limitation—“each first-metal structure in the region having at least one adjacent first-metal structure positioned next to each of its sides”—actually only exists in claim 1 of the ’334 patent. The similar phrasing in claim 1 of the "335 patent importantly leaves out “in the region”: V each first-metal structure in the region having at least one adjacent first-metal structure positioned next to each of its sides . . . . (’334 patent at cl. 1); each of the first-metal structures having at least one adjacent first metal structure positioned next to each of its sides . . . . (’335 patent at cl. 1). Thus, these limitations must be evaluated separately. The most natural reading of “in the region” is that only those first-metal structures “in the region” must have additional first-metal structures on either side. Additional structures may themselves be outsiiie of the region, and need not have adjacent structures next to both sides. This point can be illustrated with a modified version of Respondents’ demonstrative, again using blue for first-metal structures in the “region” and yellow for first-metal structures which are not in the “region”: ’ , 1 l ”f’“”"_;,_ ___ _u u*__; _;; u V K,t ,_., "J f , /_._. ,_ As * ,., -,.»._._..m__ 2,, >~~»~<~ ; i;;_'_:A/1My_ W W _ _ H 1 I L ______ ; Cm;.a,.It.;t___uM..§.l 'J’>~v4\'Y‘<(§@‘; gall; 3\" T:'f_lTfT “'“““'”"'”" T MT WT“ T ""'““1““"“""“‘Q“_“'“f“'“'“1'“;"_j§ f"f’;" ff? 65
There is nothing incompatible with thisreading and the intrinsic evidence, nor with Apple Inc. v. Samsung Elecs. C0., 695 F.3d 1370, 1378 (Fed. Cir. 2012) cited by Respondents and the Staff (see RIMB at 49; SMB at 44), as the “each” in “each first-metal structure in the region having at least 1 one adjacent . . .” is fully honored. Respondents and the Staff have pointed to no intrinsic evidence to show otherwise. (See RIMB at 49-50; RRMB at 25-26; SMB at 42-47.) Accordingly, for the limitation as found in claim l of the ’334 patent, I find “each first-metal structure in the region having at least one adjacent first-metal structure positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers” is not indefinite. And because there is otherwise no dispute over the limitation, I further find that it possesses its plain and ordinary meaning. However, the challenged limitation as it appears in the ’335 patent does not use the “in the region” modifier. All first-metal structures, regardless of their location as inside or outside the “region,” must necessarily have additional first-metal structures on either side. For the exact reasons explained by Respondents and the Staff, I find this requirement cannot possibly be met, that is, the outermost first-metal structures cannot have an additional first-metal structure on both sides. Tela’s argument to the contrary is not persuasive. That argument is rooted in the idea that “the person [oi] ordinary skill inthe art would understand that this spacing requirement ends at the botmds of the region as illustrated, for example, in Figure 8A.” (CIMB at 48-49 (citing CIMB, Ex. 7 at 111]92-93).) But Tela’s cited support is limited to its expert’s declaration, which is wholly conclusory on this point: 92. [Reciting challenged limitations] 93. I disagree that a person of ordinary skill in the art would not ' be able to understand with reasonable certainty, the bounds of these claim elements. It is well understood in the art that any region of an integrated circuit is finite in size, and as such it will have a boundary. A person of ordinary skill in the art, reading the specification would 66
understand that the claim elements are directed to placing a metal 1 structures on each metal gridline in the region. As described in the Asserted Patents, placing the features on each metal gridline in the region helps with manufacturability of the features. (CIMB, Ex. 7 at 111]92-93.) Certainly “any region . . . will have a boundary,” but there is no reason to think a person of ordinary skill would have understood this limitation to be limited in the way Tela contends, because the “in the region” language is omitted from the ’335 patent. In re Skvorec, 580 F.3d 1262, 1267 (Fed. Cir. 2009) (“The Board erred in holding that some wire legs need not have an offset, when the claims state that each wire leg has an offset”); Solomon v. Kimberly-Clark C0rp., 216 F.3d 1372, 1379 (Fed. Cir. 2000) (“[W]hat the patentee subjectively intended his claims to mean is largely irrelevant to the claim's objective meaning and scope”). Accordingly, for the limitation as found in claim 1 of the ’335 patent, I find “each first-metal structure having at least one adjacent first-metal structure positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers” is clearly, convincingly, and necessarily indefinite. _ 10. “wherein each second-metal structure in the region is positioned next to at least one other second-metal structure on a first side in accordance with a . ‘second-metal pitch and is positioned next to at least one other second-metal structure on a second side in accordance with the second-metal pitch” The Parties disagree on the proper claim construction and have proposed the following constructions: Relevant ’334 patent at claims 6, ll Claims ’335 patent at claims 6, ll ’523 patent at claim 12 Tela . I Respondents Stafl' 7 Plain and ordinary meaning. Indefinite. Indefinite. (JC, App’x A at 17-18.) 67
The Parties brief the indefiniteness of this temi along with, and on the same grounds as, “each first-metal structure [in the region] having at least one adjacent first-metal structure positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers” discussed above. Unlike those limitations, all three of the ’334 patent, ’335 patent, and ’523 patent are the same in that they all use the “in the region” language to describe which “second-metal structure(s)” must have additional second-metal structures on either side. (’334 patent at cls. 6, ll; ’335 patent at cls. 6, ll; ’523 patent at cl. l2.)6 Despite this “in the region” language, however, I find the limitation indefinite for the same logical reason as claim 1 of the ’335 patent. As noted above, each of the ‘334 patent, ’335 patent, and ’523 patent introduce the “second-metal layer” which the “second-metal structure(s)” are a part of, as being included “within” the “region”: 2. The semiconductor chip asrrecited in claim 1, wherein the region includes a second-metal layer including second-metal structures . . . ~. (’334 patent at cl. 2); 2. The semiconductor chip as recited in claim 1, wherein the region includes a second-metal layer including second-metal structures . . . . (’335 patent at cl. 2); 2. The semiconductor chip as recited in claim 1, further comprising: a second-metal layer formed above the first-metal layer within the region of the semiconductor chip . . . . (’523 patent at cl. 2). . Given that the “second-metal layer” is defined as being within the “region,” it logically follows that all of the “second-metal structure(s)” are also within the “region.” Thus, although these 6 The ’335 patent and ’523 patent’s use of “second-metal structure layout shape” (’335 patent at cls. 6, ll; ’523 patent at cl. 12) instead of “sec0nd-metal structure” as in the ’334 patent (’334 patent at cls. 6, ll) does not affect the indefiniteness analysis. i t 68
challenged limitations include “in the region,” as in claim l of the ’334 patent, the language is to the same effect as claim 1 of the ’335 patent: all “second-metal structure(s)” must be within the “region” and have additional second-metal structures on either side, and those additional second metal structures must be within the “region” and have additional second-metal structures on either side, ad infinitum. This is, of course,_an impossibility. Accordingly, I find “wherein each second-metal structure in the region is positioned next to at least one other second-metal structure on a first side in accordance with a second-metal pitch and is positioned next to at least one other second-metal structure on a second side in accordance with the second-metal pitch” is clearly, convincingly, and necessarily indefinite. 11. “each third-metal structure in the region having at least one adjacent u third-metal structure positioned next to each of its sides in accordance with . a y-coordinate spacing of less than or equal to 193 nanometers” The Parties disagree on the proper claim construction and have proposed the following constructions: Relevant ’334 patent at claims 10, 20 Claims ’33S patent at claims 10, 20 Tela Respondents Staff Plain and ordinary meaning. Indefinite. Indefinite. (JC, App’x A at 18-19.) V The Parties brief the indefiniteness of this term along with, and on the same grounds as, the previous two limitations.7 As with the limitation concerning “second-metal structure(s)” within a “second-metal layer,” the ’334 and ’335 patents introduce “third-metal structure(s)” as within a “third-metal layer” which is itself introduced as included “within” the “region”: 7 The ’335 patcnt’s use of “third-metal structure layout shape” (’335 patent at cls. 10, 20) instead of “third-metal structure” as in the ’334 patent (’334 patent at cls. 10, 20) does not affect the indefiniteness analysis. 69 '/
10. The semiconductor chip as recited in claim 7, wherein the region‘ includes a third-metal layer including third-metal structures . . . . (’334 patent at cl. 10); i 20. The semiconductor chip as recited in claim l . . . . wherein the region includes a third-metal layer including third-metal structures . . (’334 patentat cl. 20); 10. The semiconductor chip as recited in claim 7, wherein the region includes a third-metal layer including third-metal structures . . . . (’335 patent at cl. 10); 20. The semiconductor chip as recited in claim 1 . . . . wherein the region includes a third-metal layer including third-metal structures . . (’335 patent at cl. 20). Like the “second-metal structure(s)” limitation, the ’334 patent and ’335 patent each use the “in the region” language to describe which “third-metal structure(s)” must have additional second metal structures on either side. (’334 patent at cls. 10, 20; ’335 patent at cls. 10, 20.) Despite this “in the region” language, the limitation is indefinite for the same reasons as above: given that the “third-metal layer” is defined as being within the “region,” it follows that all of the “third-metal structure(s)” are also within the “region.” Thus, the same impossible effect is required——a1l “third metal structure(s)” must have additional third-metal structures on either side and within the “region.” 70
Accordingly, I find “each third-metal structure in the region having at least one adjacent third-metal structure positioned next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers” is clearly, convincingly, and necessarily indefinite. so ORDERED. “ _ MC/\»~»4€/LCameron Elliot Administrative Law Judge 71
CERTAIN INTEGRATED CIRCUITS AND PRODUCTS CONTAINING THE SAME V , INV. NO. 337-TA-1148 PUBLIC CERTIFICATE OF SERVICE l, Lisa R. Barton, hereby certify that the attached Order N0. 34 has been served by hand upon the Commission Investigative Attomey Jolm Shin, Esq., and the following parties as indicated, on 0t:J_u 22019 y . Lisa R. Barton, Secretary ' U.S. Intemational Trade Commission 500 E Street SW, Room ll2A Washington, DC 20436 FOR COMPLAINANT TELA INNOVATIONS, INC. William Belanger, Esq. 4 ( ) 'a Hand Delivery PEPPER HAMILTON, LLP ( Express Delivery Hamilton Square (,';)’Via First Class Mail 19"‘Floor, High Street Tower ( ) Other: Boston, MA 02110 _ FOR RESPONDENT ACER, INC., ACER AMERICA CORPORATION, ASUSTEK COMPUTER INC., ASUS COMPUTER INTERNATIONAL, INTEL CORPORATION, LENOVO GROUP LTD., LENOVO (UNITED STATES) INC., MICRO-STAR < INTERNATIONAL CO., LTD. & MSI COMPUTER CORP. ' ToddM.Friedman,P.C. (Hand DeliveryI KIRKLAND & ELLIS LLP ( )1, xpress Delivery _ 601 Lexington Avenue (<j/)‘Via First Class Mail New York, NY 10022 ( ) Other:
2 printed pages contain little extracted OCR body text; searchable legal-body completeness has not been established for those pages.
OCR transcription for search; preserved printed pages are authoritative
In the Matter of
CERTAIN INTEGRATED CIRCUITS AND
PRODUCTS CONTAINING THE SAME
Investigation No. 337-TA-1148
Publication 5287 March 2022
U.S. International Trade Commission
| ;
| : ange
7 CTT
Washington, DC 20436
U.S. International Trade Commission
COMMISSIONERS
Jason E. Kearns, Chair
Randolph J. Stayin, Vice Chair
David S. Johanson, Commissioner
Rhonda K. Schmidtlein, Commissioner
Amy A. Karpel, Commissioner
Address all communications to
Secretary to the Commission
United States International Trade Commission
Washington, DC 20436
U.S. International Trade Commission
Washington, DC 20436
www.usitc.gov
In the Matter of
CERTAIN INTEGRATED CIRCUITS AND
PRODUCTS CONTAINING THE SAME
Investigation No. 337-TA-1148
Publication 5287 March2022
UNITED STATES INTERNATIONAL TRADE COMMISSION
Washington, D.C.
In the Matter of
CERTAIN INTEGRATED CIRCUITS
AND PRODUCTS CONTAINING THE
SAME
Investigation No. 337-TA-1148
NOTICE OF A COMMISSION DETERMINATION TO REVIEW IN PART A
FINAL INITIAL DETERMINATION FINDING NO VIOLATION OF SECTION 337
AND, ON REVIEW, TO AFFIRM THE FINDING OF NO VIOLATION;
TERMINATION OF THE INVESTIGATION
AGENCY: U.S. International Trade Commission.
ACTION: Notice.
SUMMARY: Notice is hereby given that the U.S. International Trade Commission has
determined to review in part the final initial determination (‘‘ID’’) issued by the presiding
administrative law judge (‘‘ALJ’’) on May 22, 2020, finding no violation of section 337 in the
above-referenced investigation and, on review, to affirm the finding of no violation. The
investigation is terminated.
FOR FURTHER INFORMATION CONTACT: Michael Liberman, Esq., Office of the
General Counsel, U.S. International Trade Commission, 500 E Street, SW, Washington, D.C.
20436, telephone (202) 205-2392. Copies of non-confidential documents filed in connection
with this investigation may be viewed on the Commission’s electronic docket (EDIS) at
https://edis.usitc.gov. For help accessing EDIS, please email EDIS3Help@usitc.gov. General
information concerning the Commission may also be obtained by accessing its Internet server at
https://www.usitc.gov. Hearing-impaired persons are advised that information on this matter
can be obtained by contacting the Commission’s TDD terminal on (202) 205-1810.
SUPPLEMENTARY INFORMATION: On March 15, 2019, the Commission instituted Inv.
No. 337-TA-1148, Certain Integrated Circuits and Products Containing the Same under section
337 of the Tariff Act of 1930, as amended, 19 U.S.C. 1337 (“section 337”), based on a complaint
filed by Tela Innovations, Inc. of Los Gatos, California (“Tela”). 84 FR 9558-59 (Mar. 15,
2019). The complaint alleges a violation of section 337 by reason of infringement of certain
claims of U.S. Patent Nos. 7,943,966 (“the ’966 patent”); 7,948,012 (“the ’012 patent”);
10,141,334 (“the ’334 patent”); 10,141,335 (“the ’335 patent”); and 10,186,523 (“the ’523
patent”). The complainant also alleges the existence of a domestic industry. The notice of
investigation names as respondents Acer, Inc. of New Taipei City, Taiwan; Acer America
2
Corporation of San Jose, California; AsusTek Computer Inc. of Taipai, Taiwan; Asus Computer
International of Fremont, California; Intel Corporation of Santa Clara, California; Lenovo Group
Ltd. of Beijing, China; Lenovo (United States) Inc. of Morrisville, North Carolina; Micro-Star
International Co., Ltd. of New Taipei City, Taiwan; and MSI Computer Corp. of City of
Industry, California (collectively, “Respondents”). Id. at 9559. The Commission’s Office of
Unfair Import Investigations (“OUII”) is also named as a party in this investigation. Id.
The Commission has previously terminated the investigation as to the ’966, ’012 and
’335 patents, and as to certain claims of the ’334 and ’523 patents. See Order No. 33 (Oct. 2,
2019), unreviewed by Notice (Oct. 22, 2019); Order No. 36 (Oct. 23, 2019), unreviewed by
Notice (Nov. 15, 2019); and Order No. 44 (Jan. 6, 2020), unreviewed by Notice (Feb. 3, 2020).
On May 22, 2020, the ALJ issued his “Initial Determination on Violation of Section 337
and Recommended Determination on Remedy and Bond” (“ID/RD”) finding that there is no
violation of section 337 in the importation into the United States, the sale for importation, or the
sale within the United States after importation of certain integrated circuits and products
containing the same, in connection with the asserted claims of the ’334 and ’523 patents, and that
a domestic industry in the United States that practices or exploits the asserted patents does not
exist.
The ID finds that Respondents directly infringe claims 1, 2, and 5 of the ’334 patent, and
that claims 1, 2, 5, and 15 of the ’334 patent have been shown to be invalid. The ID also finds
that Tela’s licensee has not been shown to practice any claims of the ’334 patent, and that the
domestic industry requirement is not satisfied with respect to the ’334 patent. The ID finds that
there is no violation of section 337 with respect to the ’334 patent.
The ID further finds that Respondents directly infringe claims 1-11, 14-20, 25, and 26 of
the ’523 patent, and that no claims of the ’523 patent have been shown to be invalid. The ID
also finds that Tela’s licensee has not been shown to practice any claims of the ’523 patent, and
that the domestic industry requirement is not satisfied with respect to the ’523 patent. The ID
finds that there is no violation of Section 337 with respect to the ’523 patent.
All the parties to the investigation filed petitions for review of various portions of the
ID. On June 8, 2020, OUII filed a petition seeking review of the ID’s determination not to
analyze whether the asserted domestic industry claims are invalid and, contingently, seeking
review of the ID’s infringement findings. Also on June 8, 2020, Respondents filed a petition
contingently seeking review of the ID’s infringement and validity findings.
On June 11, 2020, Tela filed a petition seeking review of the ID’s findings concerning
the validity and the technical prong of the domestic industry requirement. Tela also seeks
contingent review of the ID’s infringement findings and the ID’s finding that Intel’s 45 nm
process is prior art under 35 U.S.C. 102(g)(2). In addition, Tela seeks review of Order No. 30
(Sept. 4, 2019), which granted-in-part Tela’s motion for leave to supplement its contention
interrogatory responses.
3
On June 18, 2020, the parties filed responses to the various petitions.
Having examined the record in this investigation, including the final ID, the petitions for
review, and the responses thereto, the Commission has determined to review the ID in part to
correct a legal error in the ID’s domestic industry findings. On review, the Commission has
determined to strike the paragraph relating to the ’334 patent on pages 101-102 of the ID and
certain sentences relating to the ‘523 patent on page 168 of the ID. The Commission takes no
position on the issue of whether the asserted domestic industry claims, i.e., claims 29-30 of the
’334 patent and claims 27-28 of the ’523 patent, are invalid. See Beloit Corp. v. Valmet Oy,
742 F.2d 1421, 1423 (Fed. Cir. 1984).
The Commission has also determined to review the ID in part on the issue of whether
Tela satisfied the economic prong of the domestic industry requirement, see ID at 185-188, and
to take no position on this issue. See Beloit, 742 F.2d at 1423.
The Commission has determined not to review the remainder of the ID, including the
ID’s finding of no violation of section 337 in this investigation. The Commission has also
determined not to review Order No. 30.
The investigation is terminated.
The Commission vote for this determination took place on September 23, 2020.
The authority for the Commission’s determination is contained in section 337 of the
Tariff Act of 1930, as amended, 19 U.S.C. 1337, and in Part 210 of the Commission’s Rules of
Practice and Procedure, 19 CFR part 210.
By order of the Commission.
Lisa R. Barton
Secretary to the Commission
Issued: September 23, 2020
CERTAIN INTEGRAGTED CIRCUITS AND PRODUCTS
CONTAINING THE SAME
Inv. No. 337-TA-1148
CONFIDENTIAL CERTIFICATE OF SERVICE
I, Lisa R. Barton, hereby certify that the attached NOTICE has been served via EDIS
upon the Commission Investigative Attorney, John Shin, Esq., and the following parties as
indicated, on 9/23/2020.
Lisa R. Barton, Secretary
U.S. International Trade Commission
500 E Street, SW, Room 112
Washington, DC 20436
On Behalf of Complainant Tela Innovations, Inc.:
☐ Via Hand Delivery
☐ Via Express Delivery
☐ Via First Class Mail
☒ Other: Email Notification
of Availability to Download
William D. Belanger, Esq.
TROUTMAN PEPPER HAMILTON SANDERS LLP
125 High Street
19th Floor, High Street Tower
Boston, MA 02110-2736
Email: William.Belanger@troutman.com
On Behalf of Respondents Acer, Inc., Acer America Corp.,
Asustek Computer Inc., Asus Computer International, Intel
Corporation, Lenovo Group Ltd., Lenovo (United States) Inc.,
Micro-Star International Co., Ltd., and MSI Computer Corp.:
Todd M. Friedman, Esq.
KIRKLAND & ELLIS LLP
601 Lexington Avenue
New York, New York 10022
Email: tfriedman@kirkland.com
☐ Via Hand Delivery
☐ Via Express Delivery
☐ Via First Class Mail
☒ Other: Email Notification
of Availability to Download
PUBLIC VERSION
1
UNITED STATES INTERNATIONAL TRADE COMMISSION
Washington, D.C.
In the Matter of
CERTAIN INTEGRATED CIRCUITS
AND PRODUCTS CONTAINING THE
SAME
Investigation No. 337-TA-1148
COMMISSION OPINION
The Commission has determined that there has been no violation of section 337 of the
Tariff Act of 1930, as amended, 19 U.S.C. § 1337 (“section 337”) in this investigation with
respect to U.S. Patent Nos. 7,943,966 (“the ’966 patent”); 7,948,012 (“the ’012 patent”);
10,141,335 (“the ’335 patent”); 10,186,523 (“the ’523 patent”); and 10,141,334 (“the ’334
patent”) (collectively, “the Asserted Patents”). This opinion sets forth the Commission’s
reasoning in support of the Commission’s determination. In addition, the Commission adopts the
findings in the ID that are not inconsistent with this opinion.
I. BACKGROUND
A. Procedural History
The Commission instituted this investigation under section 337 on March 15, 2019, based
on a complaint filed by Tela Innovations, Inc. of Los Gatos, California (“Tela”). 84 Fed. Reg.
9558-59 (Mar. 15, 2019). The complaint alleges a violation of section 337 by reason of
infringement of certain claims of the ’966 patent, the ’012 patent, the ’335 patent, the ’523 patent,
and the ’334 patent. The notice of investigation names as respondents Acer, Inc. of New Taipei
City, Taiwan; Acer America Corporation of San Jose, California (together, “Acer”); AsusTek
PUBLIC VERSION
2
Computer Inc. of Taipai, Taiwan; Asus Computer International of Fremont, California (together,
“Asus”); Intel Corporation of Santa Clara, California (“Intel”); Lenovo Group Ltd. of Beijing,
China; Lenovo (United States) Inc. of Morrisville, North Carolina (together, “Lenovo”); Micro-
Star International Co., Ltd. of New Taipei City, Taiwan; and MSI Computer Corp. of City of
Industry, California (together, “MSI”), (all respondents collectively, “Respondents”). Id. at 9559.
The Commission’s Office of Unfair Import Investigations is also named as a party in this
investigation. Id.
The Commission subsequently terminated the investigation as to all asserted claims of the
’966, ’012, and ’335 patents, as well as to certain claims of the ’334 patent and the ’523 patent.
See Order No. 33 (Oct. 2, 2019), unreviewed by Notice (Oct. 22, 2019); Order No. 36 (Oct. 23,
201), unreviewed by Notice (Nov. 15, 2019); Order No. 45, unreviewed by Notice (Feb. 3, 2020).
At the hearing, Tela asserted claims 1, 2, 5, and 15 of the ’334 patent and claims 1-11, 14-20, 25,
and 26 of the ’523 patent against the accused products. For the technical prong of the domestic
industry requirement, Tela argued that the domestic industry products practiced claims 29-30 of
the ’334 patent and claims 27-28 of the ’523 patent. ID at 5.
On July 17, 2019, the ALJ held a Markman hearing and, on October 2, 2019, issued Order
No. 34 (“the Markman Order”), construing certain claim terms of the patents at issue. Order No.
34 (July 17, 2019).
On August 19, 2019, complainant Tela moved for leave to supplement its contention
interrogatory responses concerning infringement, domestic industry, and the public interest. On
August 28, 2019, Respondents and the Commission’s investigative attorney (“the IA”) filed
responses opposing the motion in part. On September 4, 2019, the ALJ issued Order No. 30,
PUBLIC VERSION
3
which partly granted and partly denied Tela’s motion. Order No. 30 (Sep. 4, 2019).1
The evidentiary hearing took place on December 9-13, 2019. On May 22, 2020, the ALJ
issued the final ID finding that there is no violation of section 337 in the importation into the
United States, the sale for importation, or the sale within the United States after importation of
certain integrated circuits and products containing the same, in connection with the remaining
asserted claims of the ’334 and ’523 patents. ID at 204. In particular, the ID finds no domestic
industry with respect to either patent. The ID’s findings are summarized in the following table:
Asserted
Patent
ID’s Infringement
Findings Per Claim
ID’s Domestic Industry
Findings Per Claim
ID’s Validity
Findings Per Claim
The ’334
patent
1, 2, 5 – directly infringed
15 – not infringed
29, 30 – not practiced 1, 2, 5, 15 – shown to be
invalid
29, 30 – the validity is not
addressed 2
The ’523
patent
1-11, 14-20, 25, 26 –
directly infringed
27, 28 – not practiced 1-11, 14-20, 25, 26 – not
shown to be invalid
27, 28 – the validity is not
addressed 3
See ID at 5, 101, 168, 188.
Tela filed a petition for review of various portions of the ID and Order No. 30.4 The IA
1 For a detailed procedural history, see ID at 1-3.
2 See discussion infra at III.
3 See discussion infra at III.
4 See Complainant Tela Innovations, Inc’s Corrected Petition and Contingent Petition for Review
(June 11, 2020) (“ComplPet”).
PUBLIC VERSION
4
likewise filed a petition for review of the ID in part.5 Respondents filed a contingent petition for
review.6 The parties also filed responses to the various petitions.7
B. Semiconductor Chip Technology and the Asserted Patents
The technology at issue relates to the design and manufacture of semiconductor chips with
lithographic and epitaxial processes. ID at 5, 68. A semiconductor is a material that has electrical
conductivity properties falling between that of a conductor and an insulator. ID at 5-6 (citing
Joint Technology Tutorial (“JTT”) at 2). The relevant transistor in the present investigation is a
complementary metal oxide semiconductor, or CMOS. Id. (citing JTT at 11, 14). A CMOS
transistor consists of four basic components: (1) a body; (2) a source region made of one type of
semiconductor; (3) a drain region also made of that type of semiconductor; and (4) a gate made of
metal and an oxide, where the gate oxide functions as an insulator by separating the gate metal
from the other components. Id. (citing JTT at 10-14). The circuitry on a CMOS chip is formed
through a multi-stage process, including layout, in which the size, shape, and spacing of the chip’s
features are specified, followed by photolithography. Id. at 6-7 (citing JTT at 17, 19;
Respondents’ Initial Claim Construction Brief, Ex. 6 at 6.). Further processing can then be used
to build features on the wafer. The parties’ experts provided lengthy overviews of the technology.
5 See Petition of the Office of Unfair Import Investigations for Review-in-Part of the Initial
Determination on Violation of Section 337 (June 8, 2020) (“IAPet”).
6 See Respondents’ Contingent Petition for Review of The Initial Determination (June 8, 2020)
(“RespPet”).
7 See Complainant Tela Innovations, Inc.’s Response to Respondents’ and Staff’s Petitions for
Review of The Initial Determination (June 18, 2020) (“ComplResp”); Response of The Office of
Unfair Import Investigations to The Private Parties’ Petitions for Review of The Final Initial
Determination On Violation Of Section 337 (June 18, 2020) (“IAResp”); Respondents’
Opposition to Complainant’s Petition for Review of The Initial Determination (June 18, 2020)
(“RespResp”).
PUBLIC VERSION
5
See generally CX-1144C (Foty WS) at Q/A 46-135; RX-14C (Subramanian WS) at Q/A 15-69.
The ’334 patent is entitled “Semiconductor Chip Including Region Having Rectangular-
Shaped Gate Structures and First-Metal Structures.” ’334 patent. The ’334 patent issued on
November 27, 2018. Id.
The ’523 patent is entitled “Semiconductor Chip Having Region Including Gate Electrode
Features Formed in Part From Rectangular Layout Shapes on Gate Horizontal Grid and First-
Metal Structures Formed in Part From Rectangular Layout Shapes on at Least Eight First-Metal
Gridlines of First-Metal Vertical Grid.” ’523 patent. The application leading to the ’523 patent
was filed on August 31, 2018, and claims priority, through a series of intervening continuation
applications, to a provisional application, 60/781,288, filed on March 9, 2006. Id. The ’523
patent issued on January 22, 2019.
The remaining Asserted Patents both relate to the design and manufacture of integrated
circuits forming semiconductor chips. The ’334 patent focuses on the shape and fabrication of
“structures” on the resulting chip, see, e.g., ’334 patent at claim 1, while the ’523 patent focuses
on the “layout shapes” used as an input to a lithography process during fabrication of the chip,
see, e.g., ’523 patent at claim 1. These patents aim to address the manufacturing problems created
by the “lithographic gap,” which is the “difference between the minimum feature size and the
wavelength of light used in the photolithography process.” ’523 patent at 4:11-13.
C. Accused Products
The accused products in this investigation are integrated circuits – central processing units
(“CPUs”) and chipsets – fabricated with respondent Intel’s 14 nm and 10 nm manufacturing
PUBLIC VERSION
6
processes, 8 and desktops, laptops, motherboards, and other computers manufactured and sold by
respondents Acer, Asus, Lenovo, and MSI9 containing those integrated circuits. ID at 10 (citing
CIB at 8-9). The ID notes that the individual part and model numbers are too numerous to be
reproduced in the ID but are listed in demonstratives to Tela’s expert’s testimony and attached to
the ID as Appendix A. Id. (citing CX-1144C at Q/A 7- 11; CDX-0003; CDX-0004; CDX-0005;
CDX-0006; CDX-0007). All of the products listed in these demonstratives are referred to as the
“Accused Products.” The 14 nm products listed in CDX-0003 from respondent Intel will be
referred to as the “Intel 14 nm Products,” and the 10 nm products will be referred to as the “Intel
10 nm Products.” See id.
The ID further notes that Tela’s expert, Dr. Foty, and Respondents’ expert, Dr.
Subramanian, have provided demonstratives associating subsets of the Intel 14 nm Products and
Intel 10 nm Products with certain “cells”10 used in Tela’s infringement case. Id. These subsets,
along with their associated cells, are listed below:
Intel 14 nm Products
Product Family/Architecture Associated Cells
Broadwell;
Sky Lake;
[[ ]]
[[ ]]
8 The 14 nm and 10 nm manufacturing processes refer to the processes of making integrated
circuits with certain characteristics, referred to as 14 nm and 10 nm products, respectively. See
CX-1144C (Foty) at Q/A 7-11, 190, 606-614, 1881-1887, 1891-1892, 2358, 2401.
9 See supra at I.A.
10 “Typically the layout of an integrated circuit is constructed from smaller layout blocks called
cells, which correspond to the layout of a particular function. An example of a cell is a flip-flop,
which is a common element in an integrated circuit for storing data.” CX-1144 (Foty) at Q/A
107.
PUBLIC VERSION
7
Intel 14 nm Products
Product Family/Architecture Associated Cells
Kaby Lake;
Coffee Lake
[[ ]]
Cascade Lake [[ ]]
Goldmont;
Goldmont Plus
[[ ]]
[[ ]]
[[ ]]
Ice Lake Chipset;
Cannon Lake Chipset
[[ ]]
Intel 10 nm Products
Product Family/Architecture Associated Cells
Ice Lake; Cannon Lake [[ ]]
[[ ]]
[[ ]]
ID at 10-11 (citing CDX-0012C at *25-26; RDX-0016C at *37-39).
D. Domestic Industry (“DI”) Products
The domestic industry products in this investigation are integrated circuits, more
specifically, 14 nm Exynos computer processors, made for mobile devices. ID at 8 (citing CIB at
9). Tela’s licensee, Samsung Austin Semiconductor (“SAS”), performs front-end wafer
fabrication in Austin, Texas. Id.; ComplPet at 30-32. Tela explains that these 14 nm Exynos
processors are “fabricated using a version of Samsung’s11 14 nm process technology –
11 Hereinafter, “Samsung” stands for Samsung Electronics Co., Ltd. ID at 177.
PUBLIC VERSION
8
LN14LPEM (14LPE), LN14LPPM (14LPP), or LN14LPCM (14LPC).” ID at 8 (citing CIB at 10
(citing CX-1144C at Q/A 1618-1622, 2692-1693; CX-0033C at 9; CX-1228C at 52:12-54:7)).
The particular processors made by each of these processes and relied on by Tela to satisfy the
technical prong of the domestic industry requirement, are listed below:
Tela’s “DI Products”
Code Name Fab Part ID Brand Name Process
Technology
[[ ]] S5E7420 Exynos 7 Octa (7420) Mobile Processor 14LPE
[[ ]] S5E8890 Exynos 8 Octa (8890) Mobile Processor 14LPP
[[ ]] S5E8890 Exynos 8 Octa (8890) Mobile Processor 14LPP
[[ ]] S5E7880 Exynos 7880 Mobile Processor 14LPP
[[ ]] S5E7570 Exynos 7 Quad (7570) Mobile Processor 14LPC
[[ ]] S5E7870 Exynos 7 Octa (7870) Mobile Processor 14LPC
[[ ]] S5E7883 Exynos 7883 Mobile Processor 14LPC
Id. at 9 (citing CIB at 10) (internal citations omitted). These processors are referred together as
the “DI Products.”12
12 In Order No. 30, the ALJ denied Tela’s belated request to supplement its contention
interrogatory responses; Tela had sought to add five Qualcomm processors to the DI Products.
See Order No. 30 at 1-2. Tela now urges the Commission to reverse Order No. 30 and to consider
the Qualcomm processors in its technical and economic prong analyses. See generally ComplPet
at 46-60. The Commission declines Tela’s request because Order No. 30 reflects a reasonable
exercise of judicial discretion. Further, Order No. 30 appropriately considers the moving party’s
diligence and the prejudice to the non-moving party, which comports with similar orders. See,
e.g., Certain Semiconductor Devices, Semiconductor Device Packages, and Products Containing
Same, Inv. No. 337-TA-1010, Order No. 58 at 3 (Jan. 17, 2017) (assessing the complainant’s
diligence and the prejudice to the respondent); Certain Microelectromechanical Systems (“MEMS
Devices”) and Products Containing the Same, Inv. No. 337-TA-876, Order No. 49 at 2 (Dec. 13,
2013) (finding that the respondent’s lack of diligence undermined its ability to show good cause
PUBLIC VERSION
9
Tela’s evidentiary presentation regarding the economic prong of the domestic industry
requirement and discussion of the relied upon investments is based on a separate, three-tiered
classification of the DI Products, to accommodate situations in which less than all of them satisfy
technical prong. Id. The tiers are as follows:
Tela’s Economic Prong Groups
Group 1 [[ ]] (7420)
Group 2 Group 1 + [[ ]] (8890), [[ ]] (8890), [[ ]] (7880)
Group 3 Group 1 + Group 2 + [[]] (7570) + [[ ]] (7870) + [[ ]] (7883)
Id. (citing CIB at 160; RIB at 172-173).
II. STANDARD ON REVIEW
Under Commission Rule 210.43, the Commission will review an ID where it appears
that –
(1) a finding or conclusion of material fact is clearly erroneous;
(2) a legal conclusion is erroneous, without governing precedent, rule or
law, or constitutes an abuse of discretion; or
(3) the determination is one affecting Commission policy.
19 C.F.R. § 210.43.
The Commission may review an ID on the basis of a petition for review or on its own
initiative. 19 C.F.R. §§ 210.43, 210.44. The party seeking review is required to specify the issues
for which review is sought. Any issue that is not raised in the petition is deemed to have been
abandoned and may be disregarded by the Commission, unless the Commission determines to
for supplementing an interrogatory response). Accordingly, the Commission has not included the
Qualcomm processors in the DI products.
PUBLIC VERSION
10
review the issue on its own initiative. Commission review will encompass those issues for which
at least one participating Commissioner votes to review. Id.
Commission review of an initial determination is limited to the issues set forth in the
notice of review and all subsidiary issues therein. Certain Bar Clamps, Bar Clamp Pads, and
Related Packaging Display and Other Materials, Inv. No. 337-TA-429, Comm’n Op. at 3 (Jan. 4,
2001). Once the Commission determines to review an initial determination, its review is de novo.
Certain Polyethylene Terephthalate Yarn and Products Containing Same, Inv. No. 337-TA-457,
Comm’n Op. at 9 (Jun. 18, 2002). Upon review the “Commission has ‘all the powers which it
would have in making the initial determination,’ except where the issues are limited on notice or
by rule.” Certain Flash Memory Circuits and Products Containing Same, Inv. No. 337-TA-382,
Comm’n Op. on the Issues Under Review and on Remedy, the Public Interest, and Bonding at 9-
10 (Jun. 2, 1997), USITC Pub. 3046 (July 1997) (quoting Certain Acid-Washed Denim Garments
and Accessories, Inv. No. 337-TA-324, Comm’n Op. at 5 (Nov. 1992)).
On review, “the Commission may affirm, reverse, modify, set aside or remand for further
proceedings, in whole or in part, the initial determination of the administrative law judge. In
addition, the Commission may take no position on specific issues or portions of the initial
determination of the administrative law judge. The Commission may also make any findings or
conclusions that in its judgment are proper based on the record in the proceeding.” 19 C.F.R.
§ 210.45.
III. ANALYSIS
While analyzing invalidity and other defenses raised by Respondents, the ID declines to
analyze respondents’ arguments concerning the invalidity of the asserted domestic industry
PUBLIC VERSION
11
claims.13 See ID at 101, 168. The IA sought review of the ID in part, arguing that the ID’s
decision not to analyze whether the asserted DI claims are invalid is a legal error. IAPet at 17.
The Commission has determined to review the ID in part on this issue.
The ID states:
Before turning to the[] merits [of various invalidity and unenforceability
theories for the 334 patent], however, a few preliminary points are warranted.
Two of the disputed claims, 29 and 30, are pertinent only to the technical prong
of domestic industry. See RIB at 74-75; SIB at 83-84. In general, however, it is
“Commission practice not to couple an analysis of domestic industry to a validity
analysis.” Certain Soft-Edged Trampolines and Components Thereof, Inv. No.
337-TA-908, Comm’n Op. at 53 (May 1, 2015). Indefiniteness is the only basis
for invalidity that bears on whether the technical prong is met, because
indefiniteness “ma[kes] it impossible for the complainant to demonstrate whether
a patent claim [is] practiced.” Certain Silicon Microphone Packages and
Products Containing the Same, Inv. No. 337-TA-695, Notice at 3 (Jan. 21, 2011).
But indefiniteness is not one of the asserted grounds of invalidity of these two
claims. See RIB at 74-75; SIB at 83-84. Therefore, whether claims 29 and 30 of
the 334 patent are invalid is not relevant, and the parties’ dispute over these
claims need not be resolved or otherwise addressed.
ID at 101-102. See also id. at 168 (“Claim 27 [of the ’523 patent] is pertinent only to the
technical prong of domestic industry. See RIB at 148; SIB at 83-84. Thus, because indefiniteness
is not an asserted ground of invalidity of claim 27, the parties’ dispute over that claim need not be
resolved or otherwise addressed.”) (citing Silicon Microphone Packages, Inv. No. 337-TA-695,
Notice at 3).
We find that the ID’s determination that the parties’ dispute over validity of the asserted
DI claims “need not be resolved or otherwise addressed” is legally erroneous. See ID at 102.
While the ID correctly notes that it is “Commission practice not to couple an analysis of domestic
industry to a validity analysis,” ID at 101, this statement, correctly interpreted, indicates that a
13 As noted previously, the asserted DI claims are: claims 29-30 of the ‘334 patent and claims 27-
28 of the ’523 patent.
PUBLIC VERSION
12
technical prong analysis and a validity analysis coexist and one does not affect, or preclude, the
other.
Commission precedent supports this interpretation. Where the technical prong is otherwise
met because the DI claims read on the DI products, but the DI claims are invalid, there can be no
violation because the domestic industry articles are not protected by the patent. See 19 U.S.C.
§ 1337(a)(2) (the DI articles must be “protected by the patent”). Thus, as the IA correctly points
out, “the Trampolines line of cases merely clarifies that even if a domestic industry claim is
invalid, such an invalidity finding does not preclude a finding that the complainant’s domestic
industry article has otherwise met the technical prong of the domestic industry requirement[,]”
i.e., by finding that the asserted DI products meet the limitations of the relevant claims. IAPet at
19.14 In short, the question of whether the DI claims are valid is a separate question argued by the
parties that the ID should have addressed.
We therefore strike the paragraph quoted above, see ID at 101-102, and the following
sentences relating to the ’523 patent:
Claim 27 is pertinent only to the technical prong of domestic industry.
See RIB at 148; SIB at 83-84. Thus, because indefiniteness is not an asserted
ground of invalidity of claim 27, the parties’ dispute over that claim need not be
14 The IA’s petition cites, inter alia, Certain Silicon Microphone Packages and Products
Containing the Same, Inv. No. 337-TA-695, USITC Pub. No. 4293, Notice at 3 (Jan. 21, 2011)
(“The Commission has determined to review and vacate the ID’s conclusion that the technical
prong of the domestic industry requirement, 19 U.S.C. § 1337(a)(2) & (a)(3), is not met where all
the asserted patent claims are found invalid. It is Commission practice not to couple an analysis
of domestic industry to a validity analysis.”) (citation omitted); and Certain Infotainment Systems,
Components Thereof, and Automobiles Containing the Same, Inv. No. 337-TA-1119, Comm. Op.
at 27-44 (April 30, 2020)). See IAPet at 19-20. See also Certain Microlithographic Machines
and Components Thereof, Inv. 337-TA-468, Initial Determination at 68, 447 (Jan. 29, 2003)
(finding that the technical prong of the domestic industry requirement is satisfied with respect to
the claims that were found to be invalid), unreviewed by Notice (March 17, 2003).
PUBLIC VERSION
13
resolved or otherwise addressed. Silicon Microphone Packages, Inv. No. 337-
TA-695, Notice at 3.
ID at 168.15
We note Tela’s assertion that “[d]espite requesting that the Commission review the ID’s
determinations regarding obviousness of the ʼ523 DI claims, the Staff did not assert obviousness
as to any DI claim before the ALJ. (ID at 168; SIB at 113-14.) Staff thus waived any arguments
that the DI claims of the ʼ523 Patent are obvious.” ComplResp at 46. Tela’s assertion, however,
does not warrant a finding of waiver. The IA petitions for review of the ID’s alleged legal errors
unrelated to the merits of the underlying invalidity contentions regarding the DI claims, and,
therefore, the IA is permitted to petition for review of the question of whether the ID made a legal
error in its analysis to conclude that the parties’ invalidity dispute need not be addressed. See
IAPet at 21; accord Myco Industries, Inc. v. BlephEx, LLC, 955 F.3d 1, 11 n.4 (Fed. Cir. 2020)
(“‘While a party can waive his or her ability to appeal a ruling for failure to object, there can be
no waiver here of the Judge’s duty to apply the correct legal standard.’”) (quotations omitted);
GPNE Corp. v. Apple Inc., 830 F.3d 1365, 1372 (Fed. Cir. 2016) (“In general, ‘litigants waive
their right to present new claim construction disputes if they are raised for the first time after
trial.’ . . . [T]his is not what happened here.”) (internal citations omitted).
Accordingly, we find that the ID legally erred in concluding that a validity analysis does
not need to be performed for claims that pertain only to the technical prong of the domestic
15 We note that, in addition, the above two sentences appear to contain a clerical error and were
likely meant to read as follows: “Claims 27 and 28 are pertinent only to the technical prong of
domestic industry. . . . Thus, because indefiniteness is not an asserted ground of invalidity of
claims 27 and 28, the parties’ dispute over these claims need not be resolved or otherwise
addressed.” See ID at 168; see also IAPet at 18 n. 4. The Commission’s decision to strike the
above two sentences, however, renders this issue moot.
PUBLIC VERSION
14
industry requirement. However, the ID found no violation of section 337 because Tela does not
practice the asserted DI claims with respect to either the ’334 or ’523 patents. See ID at 188-89.
The Commission has determined not to review the finding concerning the technical prong of the
domestic industry requirement. In light of this determination, there is no need for the
Commission in this instance to resolve whether the asserted DI claims (i.e., claims 29-30 of the
’334 patent and claims 27-28 of the ’523 patent) are valid because this issue will not affect the
ultimate determination that there is no violation of section 337. Accordingly, the Commission
takes no position on the issue of whether claims 29-30 of the ’334 patent and claims 27-28 of the
’523 patent are valid. See Beloit Corp. v. Valmet Oy, 742 F.2d 1421, 1423 (Fed. Cir. 1984).
The Commission has also determined to review the ID in part on the issue of whether Tela
satisfied the economic prong of the domestic industry requirement, see ID at 185-188, and to take
no position on this issue. See Beloit, 742 F.2d at 1423.
IV. CONCLUSION
For the reasons set forth herein, the Commission determines that complainant Tela has not
established a violation of section 337 by Respondents with respect to the asserted claims of the
’334 and ’523 patents. Accordingly, the investigation is terminated with a finding of no violation
of section 337.
By order of the Commission.
Lisa R. Barton
Secretary to the Commission
Issued: December 30, 2020
CERTAIN INTEGRAGTED CIRCUITS AND PRODUCTS
CONTAINING THE SAME
Inv. No. 337-TA-1148
PUBLIC CERTIFICATE OF SERVICE
I, Lisa R. Barton, hereby certify that the attached OPINION, COMMISION has
been served via EDIS upon the Commission Investigative Attorney, John Shin, Esq., and
the following parties as indicated, on December 30, 2020.
Lisa R. Barton, Secretary
U.S. International Trade Commission
500 E Street, SW, Room 112
Washington, DC 20436
On Behalf of Complainant Tela Innovations, Inc.:
William D. Belanger, Esq.
TROUTMAN PEPPER HAMILTON SANDERS LLP
125 High Street
19th Floor, High Street Tower
Boston, MA 02110-2736
Email: William.Belanger@troutman.com
☐ Via Hand Delivery
☐ Via Express Delivery
☐ Via First Class Mail
☒ Other: Email Notification
of Availability to Download
On Behalf of Respondents Acer, Inc., Acer America Corp.,
Asustek Computer Inc., Asus Computer International, Intel
Corporation, Lenovo Group Ltd., Lenovo (United States) Inc.,
Micro-Star International Co., Ltd., and MSI Computer Corp.:
Todd M. Friedman, Esq.
KIRKLAND & ELLIS LLP
601 Lexington Avenue
New York, New York 10022
Email: tfriedman@kirkland.com
☐ Via Hand Delivery
☐ Via Express Delivery
☐ Via First Class Mail
☒ Other: Email Notification
of Availability to Download
UNITED STATES INTERNATIONAL TRADE COMMISSION
Washington, D.C.
In the Matter of
CERTAIN INTEGRATED CIRCUITS
AND PRODUCTS CONTAINING THE
SAME
Inv. No. 337-TA-1148
INITIAL DETERMINATION ON VIOLATION OF SECTION 337 AND
RECOMMENDED DETERMINATION ON REMEDY AND BOND
Administrative Law Judge Cameron Elliot
(May 22, 2020)
Pursuant to the Notice of Investigation and Rule 210.42(a) of the Rules of Practice and
Procedure of the United States International Trade Commission, this is my Initial Determination
in the matter of Certain Integrated Circuits and Products Containing the Same, Investigation No.
337-TA-1148.
i
TABLE OF CONTENTS Page
I. INTRODUCTION............................................................................................................. 1
A. Procedural Background ............................................................................................1
B. The Parties ...............................................................................................................3
C. The Asserted Patents and Claims.............................................................................5
D. Products at Issue ......................................................................................................8
1. Domestic Industry Products .........................................................................8
2. Accused Products .......................................................................................10
II. STANDARDS OF LAW ................................................................................................. 11
A. Standing .................................................................................................................11
B. Claim Construction ................................................................................................11
C. Infringement ...........................................................................................................15
D. Domestic Industry ..................................................................................................16
1. Technical Prong .........................................................................................16
2. Economic Prong .........................................................................................17
E. Invalidity ................................................................................................................18
1. 35 U.S.C. § 102 ..........................................................................................18
2. 35 U.S.C. § 103 ..........................................................................................19
3. 35 U.S.C. § 112 ..........................................................................................21
III. IMPORTATION AND JURISDICTION ..................................................................... 23
IV. U.S. PATENT NO. 10,141,334 ....................................................................................... 24
A. Level of Ordinary Skill in the Art ..........................................................................24
B. Claims-at-Issue ......................................................................................................24
C. Claim Construction ................................................................................................29
D. Infringement ...........................................................................................................30
1. Claim 1 .......................................................................................................31
a. Gate structures positioned in accordance with a gate horizontal
grid .................................................................................................33
b. First-metal structures positioned in accordance with a first-
metal vertical grid ..........................................................................41
c. Each gate gridline has at least one gate structure positioned
thereon............................................................................................48
ii
d. Contact Structures ..........................................................................59
e. Each of the at least six contact structures positioned and sized
to overlap both edges of the top surface of the gate structure to
which it is in physical and electrical contact .................................61
2. Claim 2 .......................................................................................................66
3. Claim 5 .......................................................................................................67
4. Claim 15 .....................................................................................................67
a. Diffusion Region ............................................................................67
b. Substantially rectangular shape......................................................80
E. Domestic Industry – Technical Prong....................................................................81
1. Product Representativeness .......................................................................81
2. Disputed Claims .........................................................................................91
a. Claim 29 .........................................................................................91
b. Claim 30 .........................................................................................99
F. Validity and Other Defenses ................................................................................101
1. 35 U.S.C. § 112, ¶ 1 (Written Description) .............................................108
2. 35 U.S.C. § 112, ¶ 1 (Enablement) ..........................................................110
3. Intel 14nm Products .................................................................................116
4. Kitabayashi in combination with Intel 45nm Products ............................116
5. Becker, and Becker in combination with Greenway ...............................124
6. Secondary Considerations........................................................................126
7. Covenant Not to Sue ................................................................................127
V. U.S. PATENT NO. 10,186,523 ..................................................................................... 128
A. Level of Ordinary Skill in the Art ........................................................................128
B. Claims-at-Issue ....................................................................................................129
C. Claim Construction ..............................................................................................138
D. Infringement .........................................................................................................139
1. Undisputed Claims ...................................................................................140
2. Disputed Claims .......................................................................................140
a. Gate electrode features formed in part based on corresponding
gate electrode feature layout shapes used as an input to a
lithography process ......................................................................142
iii
b. Gate electrode feature layout shapes positioned in accordance
with a gate horizontal grid ...........................................................150
c. First-metal structure layout shapes are positioned in accordance
with a first-metal vertical grid......................................................151
d. Each gate gridline has at least one gate electrode feature layout
shape positioned thereon ..............................................................154
e. At least six gate contact structures formed within the region of
the semiconductor chip . . . wherein at least six gate electrode
features within the region have a respective top surface in
physical and electrical contact with a corresponding one of the
at least six gate contact structures ................................................155
f. Diffusion region ...........................................................................156
g. Diffusion contact structure ...........................................................157
E. Domestic Industry – Technical Prong..................................................................159
1. Product Representativeness .....................................................................159
2. Disputed Claims .......................................................................................159
a. Claim 27 .......................................................................................160
b. Claim 28 .......................................................................................166
F. Validity ................................................................................................................168
VI. DOMESTIC INDUSTRY - ECONOMIC PRONG ................................................... 176
A. Qualifying Expenditures ......................................................................................177
B. “Significant” or “Substantial” ..............................................................................182
VII. CONCLUSIONS OF LAW .......................................................................................... 188
VIII. RECOMMENDED DETERMINATION ON REMEDY AND BOND ................... 190
A. Limited Exclusion Order......................................................................................191
B. Cease and Desist Order ........................................................................................194
C. Bond .....................................................................................................................195
D. Public Interest ......................................................................................................196
1. Public Health and Welfare .......................................................................196
2. Competitive Conditions in the United States Economy ..........................199
3. Production of Like or Directly Competitive Articles in the United
States ........................................................................................................200
iv
4. Effect upon United States Consumers .....................................................200
5. Conclusion ...............................................................................................201
IX. INITIAL DETERMINATION AND ORDER ........................................................... 203
v
TABLE OF ABBREVIATIONS
CDX Complainant’s Demonstrative Exhibit
CIB Complainant’s Revised Initial Post-Hearing Brief
CPB Complainant’s Pre-Hearing Brief
CPX Complainant’s Physical Exhibit
CRB Complainant’s Reply Post-Hearing Brief
CX Complainant’s Exhibit
Dep. Tr. Deposition Transcript
Hr’g Tr. Hearing Transcript
JX Joint Exhibit
RDX Respondents’ Demonstrative Exhibit
RIB Respondents’ Initial Post-Hearing Brief
RPB Respondents’ Pre-Hearing Brief
RPX Respondents’ Physical Exhibit
RRB Respondents’ Reply Post-Hearing Brief
RX Respondents’ Exhibit
SDX Commission Investigative Staff’s Demonstrative Exhibit
SIB Commission Investigative Staff’s Initial Post-Hearing Brief
SPB Commission Investigative Staff’s Pre-Hearing Brief
SPX Commission Investigative Staff’s Physical Exhibit
SRB Commission Investigative Staff’s Reply Post-Hearing Brief
SX Commission Investigative Staff’s Exhibit
1
I. INTRODUCTION
A. Procedural Background
Complainant Tela Innovations, Inc. (“Tela” or “Complainant”) filed the complaint
underlying this Investigation on December 19, 2018, amended the complaint on February 7, 2019,
and filed supplements to the amended complaint on February 13, 2019 and February 26, 2019.
The amended complaint alleged respondents Acer, Inc., Acer America Corporation, AsusTek
Computer Inc., Asus Computer International, Intel Corporation, Lenovo Group Ltd., Lenovo
(United States) Inc., Micro-Star International Co., Ltd., and MSI Computer Corp. (altogether,
“Respondents”) import or sell in connection with an importation certain products that infringe one
or more claims of U.S. Patent Nos. 7,943,966 (“the 966 patent”), 7,948,012 (“the 012 patent”),
10,141,334 (“the 334 patent”), 10,141,335 (“the 335 patent”), and 10,186,523 (“the 523 patent”).
By publication of a notice in the Federal Register on March 15, 2019, the U.S. International
Trade Commission ordered that:
Pursuant to subsection (b) of section 337 of the Tariff Act of 1930, as
amended, an investigation be instituted to determine whether there is a
violation of subsection (a)(1)(B) of section 337 in the importation into the
United States, the sale for importation, or the sale within the United States
after importation of products identified in paragraph (2) by reason of
infringement of one or more of claims 2, 32, and 33 of the ’966 patent;
claims 2, 27, and 28 of the ’012 patent; claims 1, 2, 5, 6, 9, 11, 15, 20, and
24 of the ’334 patent; claims 1, 2, 5, 6,9, 11, 15, 20, and 24 of the ’335
patent; and claims 1-12, 14-20, 22-24, and 26 of the '523 patent, and whether
an industry in the United States exists as required by subsection (a)(2) of
section 337[.]
43 Fed. Reg. 9559 (Mar. 15, 2019). On April 3, 2019, I set a target date of August 14, 2020 for
completion of this investigation via initial determination. Order No. 4. Also on April 3, 2019, I
set a Markman hearing date of July 8 and July 10, 2019 and the evidentiary hearing for December
9-13, 2019. Order No. 5. On April 11, 2019, at the request of the parties, the Markman hearing
was moved to July 15 and July 17, 2019. Order No. 6.
2
On July 17, 2019, I held a technology tutorial and Markman hearing, and on October 2,
2019, issued Order No. 34, construing certain claim terms of the patents at issue.
On July 29, 2019, Respondents moved for summary determination of invalidity due to lack
of written description and enablement (Motion No. 1148-024) which was denied on August 20,
2019 with Order No. 27.
On September 19, 2019, Tela moved to terminate the investigation with respect to all
asserted claims of the 966 and 012 patents (Motion No. 1148-033), which was granted via initial
determination on October 2, 2019 with Order No. 33.
On October 8, 2019, Respondents moved for summary determination of invalidity due to
indefiniteness (Motion No. 1148-035) based on certain findings made in Order No. 34, but
Respondents withdrew the motion on October 22, 2019 in light of Tela’s co-pending motion to
terminate the pertinent claims and patent from the investigation (Motion No. 1148-037). I granted
Tela’s motion via initial determination on October 23, 2019 with Order No. 36, which terminated
the investigation as to all asserted claims of the 335 patent, claims 6, 11, and 20 of the 334 patent,
and claim 12 of the 523 patent.
Also on October 8, 2019, Tela moved for summary determination that it satisfies the
economic prong of domestic industry (1148-036). I denied Tela’s motion on November 4, 2019
with Order No. 38, but treated certain facts as established under Commission Rule 210.18(e)
related to this issue and discussed further below.
The evidentiary hearing took place over December 9-13, 2019. Following the hearing, on
January 3, 2020, Tela moved to terminate the investigation in part as to claims 9 and 24 of the 334
patent, and claims 22-24 of the 523 patent (Motion No. 1148-054). I granted Tela’s motion via
initial determination on January 6, 2020 with Order No. 45. As of the date of this initial
3
determination, no motions are pending, and only the 334 patent and 523 patent remain asserted
(hereafter, “the Asserted Patents”).
Pursuant to the procedural schedule, the parties submitted initial and reply post-hearing
briefs on January 6, 2020 and January 17, 2020, respectively. Finally, on February 19, 2020, I
extended the target date by six weeks via initial determination with Order No. 47 due in part to the
volume of contested issues in this investigation.
B. The Parties
Complainant Tela Innovations, Inc. is a United States corporation organized and existing
under the laws of Delaware and having its principal place of business in Los Gatos, California.
CPB at 7. Tela conducts engineering, research, and design related to integrated circuit design in
areas such as performance, area, power consumption, and manufacturability characteristics. See
id.
Respondent Intel Corporation (“Intel”) is a corporation organized and existing under the
laws of Delaware and having its principal place of business in Santa Clara, California. RIB at 5.
Intel is a historically significant entity in the semiconductor industry with offices worldwide,
developing and selling, among other things, central processing units and other processors for
personal and server-level computers. See generally id.
Respondent Acer, Inc. is a foreign corporation organized and existing under the laws of
Taiwan and having a principal place of business in New Taipei City 221, Taiwan. RIB at 5. Acer,
Inc. designs and sells, among other things, personal computers containing Intel processors. See
id. at 7. Respondent Acer America Corporation is a corporation organized and existing under the
laws of California and having a principal place of business in San Jose, California. Id. at 5. Acer
America Corporation is a subsidiary of Acer, Inc. (together, “Acer”). Id.
4
Respondent ASUSTek Computer, Inc. is a foreign corporation organized and existing
under the laws of Taiwan and having a principal place of business in Beitou District Taipei 112,
Taiwan. RIB at 5. ASUSTek Computer, Inc. designs and sells, among other things, personal
computers containing Intel processors. See id. at 7. Respondent ASUS Computer International is
a corporation organized and existing under the laws of California and having a principal place of
business in Freemont, California. Id. at 5. ASUS Computer International is a subsidiary of
ASUSTek Computer, Inc. (together, “ASUS”). Id.
Respondent Lenovo Group Ltd. is a foreign corporation organized and existing under the
laws of China and having a principal place of business in Beijing, China. RIB at 6. Lenovo Group
Ltd. designs and sells, among other things, personal computers containing Intel processors. See
id. at 7. Respondent Lenovo (United States) Inc. is a corporation organized and existing under the
laws of Delaware and having a principal place of business in Morrisville, North Carolina. Id. at
6. Lenovo (United States) Inc. is an “indirect subsidiary” of Lenovo Group Ltd. (together,
“Lenovo”). Id.
Respondent Micro-Star International Co., Ltd. is a foreign corporation organized and
existing under the laws of Taiwan and having a principal place of business in New Taipei City
235, Taiwan. RIB at 6. Micro-Star International Co., Ltd. designs and sells, among other things,
personal computers containing Intel processors. See id. at 7. Respondent MSI Computer Corp. is
a corporation organized and existing under the laws of California and having a principal place of
business in City of Industry, California. Id. at 6. MSI Computer Corp. is a subsidiary of Micro-
Star International Co., Ltd. (together, “MSI”). Id.
5
C. The Asserted Patents and Claims
The Asserted Patents relate to semiconductor chips with gate structures and other feature
layers arranged in a grid. The following claims are at issue in this investigation:
Asserted Patent Infringement
Claims
Domestic Industry
Claims
10.141,334 1, 2, 5, 15 29, 30
10,186,523 1-11, 14-20, 25, 26 27, 28
See CIB at 11, 66, 101, 135. 1
The 334 patent is entitled, “Semiconductor Chip Including Region having Rectangular-
Shaped Gate Structures and First-Metal Structures.” JX-0003 (also cited herein as “334 patent”).
The application leading to the 334 patent was filed on August 28, 2017, and claims priority,
through a series of intervening continuation applications, to a provisional application, 60/781,288,
filed on March 9, 2006. Id. The 334 patent issued on November 27, 2018. Id.
The 523 patent is entitled, “Semiconductor Chip having Region including Gate Electrode
Features Formed in part from Rectangular Layout Shapes on Gate Horizontal Grid and First-Metal
Structures Formed in part from Rectangular Layout Shapes on at Least Eight First-Metal Gridlines
of First-Metal Vertical Grid.” JX-0005 (also cited herein as “523 patent”). The application leading
to the 523 patent was filed on August 31, 2018, and claims priority, through a series of intervening
continuation applications, to a provisional application, 60/781,288, filed on March 9, 2006. Id.
The 523 patent issued on January 22, 2019.
By way of background, a semiconductor is a material that has electrical conductivity
properties falling between that of a conductor and an insulator. Joint Technology Tutorial, EDIS
1 Tela does not identify claim 25 as infringed, but it is implicated by asserted dependent
claim 26.
6
Doc. ID 680838 at 2 (“JTT”). These conductive properties may be changed with the addition of
impurities. Id. at 6. The addition of different types of impurities results in two different types of
semiconductor, known as p-type and n-type. Id.
P-type and n-type semiconductors can be used with other materials to construct transistors.
JTT at 10-13. The relevant transistor here is a complementary metal oxide semiconductor, or
CMOS. Id. at 11, 14. A CMOS transistor is made of four basic components: (1) a body; (2) a
source region made of one type of semiconductor; (3) a drain region also made of that type of
semiconductor; and (4) a gate made of metal and an oxide, where the gate oxide functions as an
insulator by separating the gate metal from the other components. Id. at 10-14. The source region
and the drain region together constitute the diffusion region. 523 patent at 9:35-42 (“diffusion
regions 203 represent selected regions of the base substrate 201 within which impurities are
introduced” and “diffusion contacts 205 are defined to enable connection between source and drain
diffusion regions 203”).
When a voltage is applied to the gate an electric field is formed under it, causing a
conductive channel connecting the source and drain to either appear or disappear, depending on
the voltage and the type of semiconductor used to form the source and drain. JTT at 10-16. As a
result, current can be made to either flow or not flow from source to drain, and the transistor in
effect acts as an on/off switch. Id. at 10, 13. Logic circuits using this switching effect may be
formed by connecting many transistors together. See JTT at 10. A set of such circuits disposed
on a semiconductor substrate is called an integrated circuit, or chip. Id. at 2. A silicon wafer is
the substrate material for a CMOS chip. Id. at 17.
The circuitry on a CMOS chip is formed through a multi-stage process, including layout,
in which the size, shape, and spacing of the chip’s features are specified, followed by
7
photolithography. JTT at 17, 19; see Respondents’ Initial Claim Construction Brief, EDIS Doc.
ID 678284, Ex. 6 at 6 (“A layout represents the size, shape, and spacing guidelines for a given
layer in a transistor”). In photolithography, a material called photoresist is deposited on the wafer.
JTT at 17. Photoresist undergoes chemical changes when exposed to light. Id. at 19. In one
embodiment of the photolithography process, a pattern of opaque chrome material is placed on
transparent quartz glass to form a photomask corresponding to at least a portion of the layout. Id.
at 18. The photomask is placed over the wafer, ultraviolet light is shined through it, and the
underlying photoresist chemically changes to match the photomask’s pattern. Id. Application of
a solvent then removes some of the photoresist, leaving the remaining photoresist in either a
positive or negative pattern (depending on the photoresist) matching that of the photomask. Id. at
18-19.
Further processing can then be used to build features on the wafer; for example, in areas
where photoresist has been removed, material may be added by deposition or removed by etching.
See JTT at 19. Repeated application of photolithography and additional processing results in a
“stack of layers” on the wafer. 523 patent at 9:14-15; see generally 523 patent at Fig. 2. Within
these layers, the various features forming the integrated circuit include gates, gate electrodes,
source and drain contacts, and other elements, all of which “enable . . . the desired circuit
connectivity.” Id. at 9:56-57; see generally id. at 9:30-49.
The density of circuitry can be increased by reducing feature size. JTT at 20. Historically,
feature size has been shrinking, and in many cases features are smaller than the wavelength of the
light used for photolithography. Id. Because of the small feature size, interference patterns are
generated during fabrication as shapes on the photomask interact with the light. 523 patent at 4:16-
8
17. These interference patterns cause the fabricated feature shape to deviate from the designed
feature shape, so much so that failure may result. Id. at 4:22-24.
In particular, when “two-dimensionally varying features are located in neighboring
proximity to each other, the light used to expose the features will interact in a complex and
generally unpredictable manner,” and may result in, for instance, “layout feature shape distortion.”
523 patent at 7:41-44, 8:25. Although “[c]orrection methodologies” exist to solve this problem,
“semiconductor product yield is reduced as a result of . . . two-dimensionally varying features
disposed in proximity to each other.” Id. at 4:24, 8:17-21. The Asserted Patents claim a new such
methodology focused on “topology,” or feature shape. Id. at 7:36-37. Specifically, the Asserted
Patents themselves assert that “layout feature shape enhancement can be realized if the layout
feature shapes are rectangular, near the same size, and are oriented in the same direction.” Id. at
9:8-9. It stands undisputed that Tela is the owner of the Asserted Patents. CIB at 155 (citing JX-
0008; JX-0010; CX-1148C at Q/A 6-9), 11 (citing JX-0003; JX-0005; JX-0013; JX-0015); see
generally RIB; SIB.
D. Products at Issue
1. Domestic Industry Products
The domestic industry products in this investigation are integrated circuits; more
specifically, 14nm Exynos computer processors, made for mobile devices. CIB at 9. These
processors are made by Samsung Austin Semiconductor (“SAS”) in the United States. Tela
explains how these 14nm Exynos processors are “fabricated using a version of Samsung’s 14nm
process technology—LN14LPEM (14LPE), LN14LPPM (14LPP), or LN14LPCM (14LPC).” Id.
at 10 (citing CX-1144C at Q/A 1618-1622, 2692-1693; CX-0033C at *9; CX-1228C at 52:12-
54:7). The particular processors made by each of these processes, and relied on by Tela for
satisfaction of domestic industry, are listed below:
9
Tela’s “DI Products”
Code Name Fab Part ID Brand Name 14nm Process
Technology
S5E7420 Exynos 7 Octa (7420) Mobile Processor 14LPE
S5E8890 Exynos 8 Octa (8890) Mobile Processor 14LPP
S5E8890 Exynos 8 Octa (8890) Mobile Processor 14LPP
S5E7880 Exynos 7880 Mobile Processor 14LPP
S5E7570 Exynos 7 Quad (7570) Mobile
Processor
14LPC
S5E7870 Exynos 7 Octa (7870) Mobile Processor 14LPC
S5E7883 Exynos 7883 Mobile Processor 14LPC
CIB at 10 (citing, inter alia, CX-0033C at *9; CX-1145C at Q/A 32-40; CX-1144C at Q/A 2619-
2629, 2692-2693); see CX-0629; CX-0630; CX-0631; CX-0632; CX-0633; CX-1230. These
processors will be referred together in this initial determination as the “DI Products.” Further,
Tela’s presentation of economic prong domestic industry and discussion of significant investment
is based on a separate, three-tiered classification of the DI Products, to accommodate situations in
which less than all of them satisfy technical prong. The tiers are as follows:
Tela’s Economic Prong Groups
Group 1 (7420)
Group 2 Group 1 +
Group 3 Group 1 + Group 2 +
CIB at 160; see RIB at 172-173.
10
2. Accused Products
The accused products in this investigation are integrated circuits—both CPUs and
chipsets—fabricated on respondent Intel’s 14nm and 10nm manufacturing processes, and also
desktops, laptops, motherboards, and other computers manufactured and sold by respondents Acer,
Asus, Lenovo, and MSI containing those integrated circuits. CIB at 8-9. The individual part and
model numbers are too numerous to reproduce here but are listed in demonstratives to Tela’s
expert’s testimony and attached to this initial determination as Appendix A. CX-1144C at Q/A 7-
11; CDX-0003; CDX-0004; CDX-0005; CDX-0006; CDX-0007. All of the products listed in
these demonstratives will be referred to in this initial determination as the “Accused Products”;
while the 14nm products listed in CDX-0003 from respondent Intel will be referred to as the “Intel
14nm Products” and the 10nm products will be referred to as the “Intel 10nm Products.”
Further, Tela’s expert, Dr. Foty, and Respondents’ expert, Dr. Subramanian, have provided
demonstratives associating subsets of the Intel 14nm Products and Intel 10nm Products with
certain “cells” used in Tela’s infringement case. These subsets, along with their associated cells,
are listed below:
Intel 14nm Products
Product Family/Architecture Associated Cells
Broadwell;
Sky Lake;
Kaby Lake;
Coffee Lake
Cascade Lake
Goldmont;
Goldmont Plus
11
Ice Lake Chipset;
Cannon Lake Chipset
Intel 10nm Products
Product Family/Architecture Associated Cells
Ice Lake;
Cannon Lake
See CDX-0012C at *25-26; RDX-0016C at *37-39.
II. STANDARDS OF LAW
A. Standing
Commission Rule 210.12 states in relevant part “[f]or every intellectual property based
complaint (regardless of the type of intellectual property involved), [the complaint must] include
a showing that at least one complainant is the owner or exclusive licensee of the subject intellectual
property.” 19 C.F.R. § 210.12(a)(7). In determining whether this rule is met, the Commission
looks to the standing requirement used by courts in patent infringement cases. Certain Audio
Processing Hardware, Software, and Products Containing the Same, Inv. No. 337-TA-1026,
Comm’n Op. at 9 (April 18, 2018) (citations omitted).
B. Claim Construction
“The construction of claims is simply a way of elaborating the normally terse claim
language in order to understand and explain, but not to change, the scope of the claims.” Embrex,
Inc. v. Serv. Eng'g Corp., 216 F.3d 1343, 1347 (Fed. Cir. 2000). Although most of the disputed
12
claim terms were construed in an earlier order, some of the issues presented below are only
resolvable with additional claim construction.
Claim construction focuses on the intrinsic evidence, which consists of the claims
themselves, the specification, and the prosecution history. See Phillips v. AWH Corp., 415 F.3d
1303, 1314 (Fed. Cir. 2005) (en banc); see also Markman v. Westview Instr., Inc., 52 F.3d 967,
979 (Fed. Cir. 1995) (en banc). As the Federal Circuit in Phillips explained, courts must analyze
each of these components to determine the “ordinary and customary meaning of a claim term” as
understood by a person of ordinary skill in art at the time of the invention. 415 F.3d at 1313.
“Such intrinsic evidence is the most significant source of the legally operative meaning of disputed
claim language.” Bell Atl. Network Servs., Inc. v. Covad Commc'ns Grp., Inc., 262 F.3d 1258,
1267 (Fed. Cir. 2001).
“It is a ‘bedrock principle’ of patent law that ‘the claims of a patent define the invention to
which the patentee is entitled the right to exclude.”’ Phillips, 415 F.3d at 1312 (quoting
Innova/Pure Water, Inc. v. Safari Water Filtration Sys., Inc., 381 F.3d 1111, 1115 (Fed. Cir.
2004)). “Quite apart from the written description and the prosecution history, the claims
themselves provide substantial guidance as to the meaning of particular claims terms.” Id. at 1314;
see Interactive Gift Express, Inc. v. Compuserve Inc., 256 F.3d 1323, 1331 (Fed. Cir. 2001) (“In
construing claims, the analytical focus must begin and remain centered on the language of the
claims themselves, for it is that language that the patentee chose to use to ‘particularly point [ ] out
and distinctly claim [ ] the subject matter which the patentee regards as his invention.”). The
context in which a term is used in an asserted claim can be “highly instructive.” Phillips, 415 F.3d
at 1314. Additionally, other claims in the same patent, asserted or unasserted, may also provide
guidance as to the meaning of a claim term. Id. “Courts do not rewrite claims; instead, we give
13
effect to the terms chosen by the patentee.” K-2 Corp. v. Salomon S.A., 191 F.3d 1356, 1364 (Fed.
Cir. 1999). “[T]he specification ‘is always highly relevant to the claim construction analysis.
Usually it is dispositive; it is the single best guide to the meaning of a disputed term.’” Phillips,
415 F.3d at 1315 (quoting Vitronics Corp. v. Conceptronic, Inc., 90 F.3d 1576, 1582 (Fed. Cir.
1996)). “[T]he specification may reveal a special definition given to a claim term by the patentee
that differs from the meaning it would otherwise possess. In such cases, the inventor’s
lexicography governs.” Id. at 1316.
In addition to the claims and the specification, the prosecution history should be examined,
if in evidence. Phillips, 415 F.3d at 1317; see Liebel-Flarsheim Co. v. Medrad, Inc., 358 F.3d 898,
913 (Fed. Cir. 2004). The prosecution history can “often inform the meaning of the claim language
by demonstrating how the inventor understood the invention and whether the inventor limited the
invention in the course of prosecution, making the claim scope narrower than it would otherwise
be.” Phillips, 415 F.3d at 1317; see Chimie v. PPG Indus. Inc., 402 F.3d 1371, 1384 (Fed. Cir.
2005) (“The purpose of consulting the prosecution history in construing a claim is to exclude any
interpretation that was disclaimed during prosecution.”).
When the intrinsic evidence does not establish the meaning of a claim, then extrinsic
evidence (i.e., all evidence external to the patent and the prosecution history, including
dictionaries, inventor testimony, expert testimony, and learned treatises) may be considered.
Phillips, 415 F.3d at 1317. Extrinsic evidence is generally viewed as less reliable than the patent
itself and its prosecution history in determining how to define claim terms. Id. “The court may
receive extrinsic evidence to educate itself about the invention and the relevant technology, but the
court may not use extrinsic evidence to arrive at a claim construction that is clearly at odds with
14
the construction mandated by the intrinsic evidence.” Elkay Mfg. Co. v. Ebco Mfg. Co., 192 F.3d
973, 977 (Fed. Cir. 1999).
The construction of a claim term is generally guided by its ordinary meaning. However,
courts may deviate from the ordinary meaning when: (1) “the intrinsic evidence shows that the
patentee distinguished that term from prior art on the basis of a particular embodiment, expressly
disclaimed subject matter, or described a particular embodiment as important to the invention;” or
(2) “the patentee acted as his own lexicographer and clearly set forth a definition of the disputed
claim term in either the specification or prosecution history.” Edwards Lifesciences LLC v. Cook
Inc., 582 F.3d 1322, 1329 (Fed. Cir. 2009); see GE Lighting Sols., LLC v. AgiLight, Inc., 750 F.3d
1304, 1309 (Fed. Cir. 2014) (“the specification and prosecution history only compel departure
from the plain meaning in two instances: lexicography and disavowal.”); Omega Eng’g, Inc, v.
Raytek Corp., 334 F.3d 1314, 1324 (Fed. Cir. 2003) (“[W]here the patentee has unequivocally
disavowed a certain meaning to obtain his patent, the doctrine of prosecution disclaimer attaches
and narrows the ordinary meaning of the claim congruent with the scope of the surrender.”); Rheox,
Inc. v. Entact, Inc., 276 F.3d 1319, 1325 (Fed. Cir. 2002) (“The prosecution history limits the
interpretation of claim terms so as to exclude any interpretation that was disclaimed during
prosecution.”). Nevertheless, there is a “heavy presumption that a claim term carries its ordinary
and customary meaning.” CCS Fitness, Inc. v. Brunswick Corp., 288 F.3d 1359, 1366 (Fed. Cir.
2002) (citations omitted). The standard for deviating from the plain and ordinary meaning is
“exacting” and requires “a clear and unmistakable disclaimer.” Thorner v. Sony Computer Entm’t
Am. LLC, 669 F.3d 1362, 1366-67 (Fed. Cir. 2012); see Epistar Corp. v. Int’l Trade Comm’n, 566
F.3d 1321, 1334 (Fed. Cir. 2009) (requiring “expressions of manifest exclusion or restriction,
15
representing a clear disavowal of claim scope” to deviate from the ordinary meaning) (citation
omitted).
C. Infringement
“An infringement analysis entails two steps. The first step is determining the meaning and
scope of the patent claims asserted to be infringed. The second step is comparing the properly
construed claims to the device accused of infringing.” Markman, 52 F.3d at 976.
A patentee may prove infringement either literally or under the doctrine of equivalents.
Infringement of either sort must be proven by a preponderance of the evidence. SmithKline
Diagnostics, Inc. v. Helena Labs. Corp., 859 F.2d 878, 889 (Fed. Cir. 1988). A preponderance of
the evidence standard “requires proving that infringement was more likely than not to have
occurred.” Warner-Lambert Co. v. Teva Pharm. USA, Inc., 418 F.3d 1326, 1341 n.15 (Fed. Cir.
2005).
Literal infringement, a form of direct infringement, is a question of fact. Finisar Corp. v.
DirecTV Group, Inc., 523 F.3d 1323, 1332 (Fed. Cir. 2008). “To establish literal infringement,
every limitation set forth in a claim must be found in an accused product, exactly.” Microsoft
Corp. v. GeoTag, Inc., 817 F.3d 1305, 1313 (Fed. Cir. 2016) (quoting Southwall Techs., Inc. v.
Cardinal IG Co., 54 F.3d 1570, 1575 (Fed. Cir. 1995). If any claim limitation is absent, there is
no literal infringement of that claim as a matter of law. Bayer AG v. Elan Pharm. Research Corp.,
212 F.3d 1241, 1247 (Fed. Cir. 2000).
Doctrine of equivalents is also a form of direct infringement. One rubric for evaluating if
a claimed feature is not literally, but nonetheless equivalent to, a claimed feature is known as the
function-way-result test. Under this test, the accused feature is equivalent to the claim limitation
when “it performs substantially the same function in substantially the same way to obtain the same
16
result.” Duncan Parking Techs., Inc. v. IPS Grp., Inc., 914 F.3d 1347, 1362 (Fed. Cir. 2019)
(quoting Graver Tank & Mfg. Co. v. Linde Air Prods. Co., 339 U.S. 605, 608 (1950)). Another
test is known as the insubstantial differences test, where “[a]n element in the accused device is
equivalent to a claim limitation if the only differences between the two are insubstantial.” Voda
v. Gordia Corp., 536 F.3d 1311, 1139 (Fed. Cir. 2008). The Supreme Court has further instructed,
“the proper time for evaluating equivalency . . . is at the time of infringement, not at the time the
patent was issued.” Warner-Jenkinson Co., Inc. v. Hilton Davis Chem. Co., 520 U.S. 17, 37
(1997).
D. Domestic Industry
In an investigation based on a claim of patent infringement, Section 337 requires that an
industry in the United States, relating to the articles protected by the patent, exist or be in the
process of being established. 19 U.S.C. § 1337(a)(2). Under Commission precedent, the domestic
industry requirement has been divided into (i) a “technical prong” (which requires articles covered
by the asserted patent) and (ii) an “economic prong” (which requires certain levels of activity with
respect to the protected articles or patent itself). See Certain Video Game Systems and Controllers,
Inv. No. 337-TA-743, Comm’n Op. at 6-7 (April 14, 2011) (“Video Game Systems”).
1. Technical Prong
The technical prong of the domestic industry requirement is satisfied when the complainant
in a patent-based section 337 investigation establishes that it is practicing or exploiting the patents
at issue. See 19 U.S.C. §§ 1337 (a)(2), (3); Certain Microsphere Adhesives, Process for Making
Same and Prods. Containing Same, Including Self-Stick Repositionable Notes, Inv. No. 337-TA-
366, Comm’n Op. at 8 (U.S.I.T.C. Jan. 16, 1996). “In order to satisfy the technical prong of the
domestic industry requirement, it is sufficient to show that the domestic industry practices any
claim of that patent, not necessarily an asserted claim of that patent.” Certain Ammonium
17
Octamolybdate Isomers, Inv. No. 337-TA-477, Comm’n Op. at 55 (U.S.I.T.C. Aug. 28, 2003).
Historically, the Commission permits the complainant’s products, and those of its licensees, to be
considered for technical prong purposes. See Certain Magnetic Tape Cartridges and Components
Thereof, Inv. No. 337-TA-1058, Comm’n Op. at 28-29 (April 9, 2019).
The test for claim coverage for the purposes of the technical prong of the domestic industry
requirement is the same as that for infringement. See Certain Doxorubicin and Preparations
Containing Same, Inv. No. 337-TA-300, Initial Determination at 109 (U.S.I.T.C. May 21, 1990),
aff’d, Views of the Commission at 22 (U.S.I.T.C. Oct. 31, 1990); Alloc, Inc. v. Int’l Trade Comm’n,
342 F.3d 1361, 1375 (Fed. Cir. 2003). “First, the claims of the patent are construed. Second, the
complainant’s article or process is examined to determine whether it falls within the scope of the
claims.” Certain Doxorubicin and Preparations Containing Same, Inv. No. 337-TA-300, Initial
Determination at 109. As with infringement, the technical prong of the domestic industry can be
satisfied either literally or under the doctrine of equivalents. Certain Dynamic Sequential Gradient
Devices and Component Parts Thereof, Inv. No. 337-TA-335, ID at 44, Pub. No. 2575 (U.S.I.T.C.
May 15, 1992). In short, the patentee must establish by a preponderance of the evidence that the
domestic product practices one or more claims of the patent.
2. Economic Prong
The “economic prong” of the domestic industry requirement is satisfied when there exists
in the United States, in connection with products practicing at least one claim of the patent at issue:
(A) significant investment in plant and equipment; (B) significant employment of labor or capital;
or (C) substantial investment in its exploitation, including engineering, research and development,
and licensing. 19 U.S.C. § 1337(a)(3). Establishment of the “economic prong” is not dependent
on any “minimum monetary expenditure” and there is no need for complainant “to define the
industry itself in absolute mathematical terms.” Certain Stringed Musical Instruments and
18
Components Thereof, Inv. No. 337-TA-586, Comm’n Op. at 25-26 (May 16, 2008) (“Stringed
Instruments”). However, a complainant must substantiate the significance of its activities with
respect to the articles protected by the patent. Certain Printing and Imaging Devices and
Components Thereof, Inv. No. 337-TA-690, Comm’n Op. at 30 (Feb. 17, 2011) (“Imaging
Devices”). Further, a complainant can show that its activities are significant by showing how those
activities are important to the articles protected by the patent in the context of the company’s
operations, the marketplace, or the industry in question. Id. at 27-28. That significance, however,
must be shown in a quantitative context. Lelo Inc. v. Int’l Trade Comm’n, 786 F.3d 879, 886 (Fed.
Cir. 2015). The Federal Circuit noted that when the ITC first addressed this requirement, it found
the word “‘significant’ denoted ‘an assessment of the relative importance of the domestic
activities.’” Id. at 883-4 (internal citation omitted) (emphasis added). In general, “[t]he purpose
of the domestic industry requirement is to prevent the ITC from becoming a forum for resolving
disputes brought by foreign complainants whose only connection with the United States is
ownership of a U.S. patent.” Certain Battery-Powered Ride-On Toy Vehicles, Inv. No. 337-TA-
314, USITC Pub. No. 2420, Initial Determination at 21 (Aug. 1991).
E. Invalidity
1. 35 U.S.C. § 102
Pursuant to 35 U.S.C. § 102, a patent claim is invalid as anticipated if:
(a) the invention was known or used by others in this country, or patented
or described in a printed publication in this or a foreign country, before the
invention thereof by the applicant;
(b) the invention was patented or described in a printed publication in this
or a foreign country or in public use or on sale in this country, more than
one year prior to the date of the application for patent in the United States;
(e) the invention was described in (1) an application for patent, published
under section 122(b), by another filed in the United States before the
invention by the applicant for patent or (2) a patent granted on an application
19
for patent by another filed in the United States before the invention by the
applicant for patent;”
(g)(2) before such person’s invention thereof, the invention was made in
this country by another inventor who had not abandoned, suppressed, or
concealed it.
35 U.S.C. § 102 (pre-AIA). “A patent is invalid for anticipation if a single prior art reference
discloses each and every limitation of the claimed invention. Moreover, a prior art reference may
anticipate without disclosing a feature of the claimed invention if that missing characteristic is
necessarily present, or inherent, in the single anticipating reference.” Schering Corp. v. Geneva
Pharm., Inc., 339 F.3d 1373, 1377 (Fed. Cir. 2003) (citations omitted); see Santarus, Inc. v. Par
Pharm., Inc., 694 F.3d 1344, 1354 (Fed. Cir. 2012). “A century-old axiom of patent law holds
that a product ‘which would literally infringe if later in time anticipates if earlier.’” Upsher-Smith
Labs., Inc. v. Pamlab, L.L.C., 412 F.3d 1319, 1322 (Fed. Cir. 2005) (citing Schering Corp., 339
F.3d at 1322).
2. 35 U.S.C. § 103
Section 103 of the Patent Act states:
A patent may not be obtained though the invention is not identically
disclosed or described as set forth in section 102 of this title, if the
differences between the subject matter sought to be patented and the prior
art are such that the subject matter as a whole would have been obvious at
the time the invention was made to a person having ordinary skill in the art
to which said subject matter pertains. Patentability shall not be negated by
the manner in which the invention was made.
35 U.S.C. § 103(a) (pre-AIA). “Obviousness is a question of law based on underlying questions
of fact.” Scanner Techs. Corp. v. ICOS Vision Sys. Corp. N.V., 528 F.3d 1365, 1379 (Fed. Cir.
2008). The underlying factual determinations include: “(1) the scope and content of the prior art,
(2) the level of ordinary skill in the art, (3) the differences between the claimed invention and the
prior art, and (4) objective indicia of non-obviousness.” Id. (citing Graham v. John Deere Co. of
20
Kansas City, 383 U.S. 1, 17-18 (1966)). These factual determinations are often referred to as the
“Graham factors.”
The critical inquiry in determining the differences between the claimed invention and the
prior art is whether there is a reason to combine the prior art references. KSR Int’l Co. v. Teleflex
Inc., 550 U.S. 398, 418-21 (2007). In KSR, the Supreme Court rejected the Federal Circuit’s rigid
application of the teaching-suggestion-motivation test. While the Court stated that “it can be
important to identify a reason that would have prompted a person of ordinary skill in the relevant
field to combine the elements in the way the claimed new invention does,” it described a more
flexible analysis:
Often, it will be necessary for a court to look to interrelated teachings of
multiple patents; the effects of demands known to the design community or
present in the marketplace; and the background knowledge possessed by a
person having ordinary skill in the art, all in order to determine whether
there was an apparent reason to combine the known elements in the fashion
claimed by the patent at issue . . . . As our precedents make clear, however,
the analysis need not seek out precise teachings directed to the specific
subject matter of the challenged claim, for a court can take account of the
inferences and creative steps that a person of ordinary skill in the art would
employ.
Id. at 418. Since KSR, the Federal Circuit has announced that, where a patent challenger contends
that a patent is invalid for obviousness based on a combination of prior art references, “the burden
falls on the patent challenger to show by clear and convincing evidence that a person of ordinary
skill in the art would have had reason to attempt to make the composition or device . . . and would
have had a reasonable expectation of success in doing so.” PharmaStem Therapeutics, Inc. v.
ViaCell, Inc., 491 F.3d 1342, 1360 (Fed. Cir. 2007); see KSR, 550 U.S. at 399 (“The proper
question was whether a pedal designer of ordinary skill in the art, facing the wide range of needs
created by developments in the field, would have seen an obvious benefit to upgrading Asano with
a sensor.”).
21
In addition to demonstrating that a reason exists to combine prior art references, the
challenger must demonstrate that the combination of prior art references discloses all of the
limitations of the claims. Hearing Components, Inc. v. Shure Inc., 600 F.3d 1357, 1373-4 (Fed.
Cir. 2010) (abrogated on other grounds by Nautilus, Inc. v. Biosig Instruments, Inc., 134 S.Ct.
2120 (2014)) (upholding finding of non-obviousness based on the fact that there was substantial
evidence that the asserted combination of references failed to disclose a claim limitation); Velander
v. Garner, 348 F.3d 1359, 1363 (Fed. Cir. 2003) (explaining that a requirement for a finding of
obviousness is that “all the elements of an invention are found in a combination of prior art
references”).
An obviousness determination should also include a consideration of “secondary
considerations” such as “commercial success, long felt but unsolved needs, failure of others, etc.,
might be utilized to give light to the circumstances surrounding the origin of the subject matter
sought to be patented.” Graham, 338 U.S. at 17-18. “For [such] objective evidence to be accorded
substantial weight, its proponent must establish a nexus between the evidence and the merits of
the claimed invention.” In re GPAC Inc., 57 F.3d 1573, 1580 (Fed. Cir. 1995); see Merck & Cie
v. Gnosis S.P.A., 808 F.3d 829, 837 (Fed. Cir. 2015). “Where the offered secondary consideration
actually results from something other than what is both claimed and novel in the claim, there is no
nexus to the merits of the claimed invention.” In re Huai-Hung Kao, 639 F.3d 1057, 1068 (Fed.
Cir. 2011).
3. 35 U.S.C. § 112
Pursuant to 35 U.S.C. § 112, a patent claim is invalid for lack of written description if the
patent’s specification fails to “reasonably convey[] to those skilled in the art that the inventor had
possession of the claimed subject matter as of the filing date.” Ariad Pharm., Inc. v. Eli Lilly &
Co., 598 F.3d 1336, 1351 (Fed. Cir. 2010) (en banc). “[T]he test requires an objective inquiry into
22
the four corners of the specification from the perspective of a person of ordinary skilled in the art”
(id.), and “the level of detail required to satisfy the written description requirement varies
depending on the nature and scope of the claims and on the complexity and predictability of the
relevant technology” (id. (citing Capon v. Eshar, 418 F.3d 1349, 1357-58 (Fed. Cir. 2005))).
Additionally, under 35 U.S.C. § 112, a patent claim is invalid for indefiniteness if “its
claims, read in light of the specification delineating the patent, and the prosecution history, fail to
inform, with reasonable certainty, those skilled in the art about the scope of the invention.”
Nautilus, 134 S. Ct. at 2124. Indefiniteness can result from a single claim covering both an
apparatus and a method of use of that apparatus, as “a manufacturer or seller of the claimed
apparatus would not know from the claim whether it might also be liable for contributory
infringement because a buyer or user of the apparatus later performs the claimed method using the
apparatus.” IPXL Holdings v. Amazon.com, 430 F.3d 1377, 1384 (Fed. Cir. 2005); see
UltimatePointer, L.L.C. v. Nintendo Co., 816 F.3d 816, 826 (Fed. Cir. 2016) (holding these types
of claims may make it “unclear whether infringement . . . occurs when one creates an infringing
system, or whether infringement occurs when the user actually uses the system in an infringing
manner”) (citation omitted). “[A]pparatus claims are not necessarily indefinite for using functional
language,” however, as in, for example, means-plus-function formatted claims. MasterMine
Software, Inc. v. Microsoft Corp., 874 F.3d 1307, 1313 (Fed. Cir. 2017) (citing Microprocessor
Enhancement Corp. v. Tex. Instruments Inc., 520 F.3d 1367, 1375 (Fed. Cir. 2008)). Another
example may be when the claim merely recites “that the system ‘possesses the recited structure
which is capable of performing the recited functions.’” Id. at 1315-16 (quoting Microprocessor
Enhancement, 520 F.3d at 1375). Overall, “the written description is key to determining whether
a term of degree is indefinite.” Guangdong Alison Hi-Tech Co. v. Int’l Trade Comm’n, 936 F.3d
23
1353, 1361 (Fed. Cir. 2019) (citing Sonix Tech. Co. v. Publ’ns Int’l, Ltd., 844 F.3d 1370, 1378
(Fed. Cir. 2017)) (emphasis in original).
Further, under 35 U.S.C. § 112, a patent specification must contain a description “of the
manner and process of making and using” the invention. 35 U.S.C. § 112. This is referred to as
the enablement requirement, and a patent claim is sufficiently enabled only when the specification
teaches “those skilled in the art how to make and use the full scope of the claimed invention without
undue experimentation.” Genentech, Inc. v. Novo Nordisk, A/S, 108 F.3d 1361, 1365 (Fed. Cir.
1997). To determine whether the specification leaves a person of ordinary skill to perform undue
experimentation, the Federal Circuit has identified the following factors to consider: (1) the
quantity of experimentation necessary; (2) the amount of direction or guidance presented; (3) the
presence or absence of working examples; (4) the nature of the invention; (5) the state of the prior
art; (6) the relative skill of those in the art; (7) the predictability or unpredictability of the art; and
(8) the breadth of the claims. In re Wands, 585 F.2d 731, 737 (Fed. Cir. 1988). “[I]t is not
necessary that a court review all the Wands factors to find a disclosure enabling. They are
illustrative, not mandatory.” Amgen, Inc. v. Chugai Pharm. Co., Ltd., 927 F.2d 1200, 1213 (Fed.
Cir. 1991).
III. IMPORTATION AND JURISDICTION
In its initial post-hearing brief, Tela asserts that “Respondents do not deny that they make
the Accused Products over which the Commission has in rem jurisdiction.” CIB at 10. Tela notes
that respondent Intel stipulated that it imports, sells for importation, and sells after importation into
the United States various generations of its portion of the Accused Products (see id. at 11 (citing
JX-0017C; CDX-0003C)) and argues the other respondents also import, sell for importation, or
sell after importation, their respective Accused Products. Respondents do not dispute the
Commission’s jurisdiction over this investigation or that the requisite importation or sales in
24
connection with importation of their respective Accused Products has taken place. See RIB at 13.
Accordingly, the importation requirement under 19 U.S.C. § 1337(a)(1)(B) is satisfied, and the
Commission has in rem jurisdiction over the Accused Products.
IV. U.S. PATENT NO. 10,141,334
A. Level of Ordinary Skill in the Art
In Order No. 34, I determined that a person having ordinary skill in the art of the 334 patent
at the time of invention “would have: (1) a bachelor’s degree in electrical engineering or computer
engineering with at least three years of experience in the field of semiconductor layout technology
and integrated circuit design; (2) a master’s degree in electrical engineering or computer
engineering with at least two years of experience in the same field; (3) a bachelor’s degree in
physics or materials science with at least five years of experience in the same field; or (4) a
comparable combination of education and experience.” Order No. 34 at 8. The parties do not
challenge this determination (see RIB at 15; SIB at 24; see generally CIB; CRB; RRB; SRB), and
it is applied throughout this initial determination.
B. Claims-at-Issue
Claims 1, 2, 5, 15, 29, and 30 of the 334 patent are at issue in this investigation, either
through allegations of infringement or of the domestic industry technical prong. See CIB at 11,
66. These claims are reproduced below along with additional claim limitation identifiers:
1. [1a] A semiconductor chip, comprising: gate structures formed within a
region of the semiconductor chip,
[1b] the gate structures positioned in accordance with a gate horizontal grid
that includes at least seven gate gridlines, wherein adjacent gate gridlines
are separated from each other by a gate pitch of less than or equal to about
193 nanometers, each gate structure in the region having a substantially
rectangular shape with a width of less than or equal to about 45 nanometers
and positioned to extend lengthwise in a y-direction in a substantially
centered manner along an associated gate gridline,
25
[1c] wherein each gate gridline has at least one gate structure positioned
thereon, wherein each pair of gate structures that are positioned in an end-
to-end manner are separated by a line end-to-line end gap of less than or
equal to about 193 nanometers,
[1d] wherein at least one gate structure within the region is a first-transistor-
type-only gate structure that forms at least one gate electrode of at least one
transistor of a first transistor type and does not form a gate electrode of a
transistor of a second transistor type, wherein at least one gate structure
within the region is a second-transistor-type-only gate structure that forms
at least one gate electrode of at least one transistor of the second transistor
type and does not form a gate electrode of a transistor of the first transistor
type,
[1e] wherein a total number of first-transistor-type-only gate structures
within the region is equal to a total number of second-transistor-type-only
gate structures within the region;
[1f] a first-metal layer formed above top surfaces of the gate structures
within the region of the semiconductor chip, the first-metal layer positioned
first in a stack of metal layers counting upward from top surfaces of the gate
structures, the first-metal layer separated from the top surfaces of the gate
structures by at least one insulator material, adjacent metal layers in the
stack of metal layers separated by at least one insulator material,
[1g] wherein the first-metal layer includes first-metal structures positioned
in accordance with a first-metal vertical grid, the first-metal vertical grid
including at least eight first-metal gridlines, each first-metal structure in the
region having a substantially rectangular shape and positioned to extend
lengthwise in an x-direction in a substantially centered manner on an
associated first-metal gridline,
[1h] each first-metal structure in the region having at least one adjacent first-
metal structure positioned next to each of its sides in accordance with a y-
coordinate spacing of less than or equal to 193 nanometers, wherein each
pair of first-metal structures that are positioned in an end-to-end manner are
separated by a line end-to-line end gap of less than or equal to about 193
nanometers; and
[1i] at least six contact structures formed within the region of the
semiconductor chip, wherein at least six gate structures within the region
have a respective top surface in physical and electrical contact with a
corresponding one of the at least six contact structures,
[1j] each of the at least six contact structures having a substantially
rectangular shape with a corresponding length greater than a corresponding
width and with the corresponding length oriented in the x-direction, each of
26
the at least six contact structures positioned and sized to overlap both edges
of the top surface of the gate structure to which it is in physical and electrical
contact,
[1k] wherein the region includes at least four transistors of the first transistor
type and at least four transistors of the second transistor type that
collectively form part of a logic circuit, wherein the logic circuit includes
electrical connections that collectively include first-metal structures
positioned on at least five of the at least eight first-metal gridlines.
2. [2a] The semiconductor chip as recited in claim 1, wherein the region
includes a second-metal layer including second-metal structures positioned
in accordance with a second-metal horizontal grid, the second-metal
horizontal grid including at least eight second-metal gridlines,
[2b] each second-metal structure in the region having at least one adjacent
second-metal structure positioned next to each of its sides in accordance
with an x-coordinate spacing of less than or equal to 193 nanometers, each
second-metal structure in the region having a substantially rectangular
shape and positioned to extend lengthwise in the y-direction in a
substantially centered manner along an associated second-metal gridline,
[2c] wherein at least eight of the at least eight second-metal gridlines have
at least one second-metal structure positioned thereon, wherein each pair of
second-metal structures that are positioned in an end-to-end manner are
separated by a line end-to-line end gap,
[2d] wherein the second-metal layer is positioned second in the stack of
metal layers counting upward from the top surfaces of the gate structures.
. . . .
5. The semiconductor chip as recited in claim 2, wherein the at least six
contact structures are positioned in accordance with a contact vertical grid,
the contact vertical grid including contact gridlines extending in the x-
direction, each of the at least six contact structures positioned to extend
lengthwise in the x-direction in a substantially centered manner along an
associated contact gridline, and at least two of the at least six contact
structures positioned to also extend lengthwise in the x-direction in a
substantially centered manner along a corresponding first-metal gridline.
. . . .
15. The semiconductor chip as recited in claim 1, wherein each transistor
within the region of the semiconductor chip is formed in part by a
corresponding diffusion region, wherein each diffusion region that forms
part of at least one transistor within the region of the semiconductor chip
has a substantially rectangular shape.
27
. . . .
29. [29a] A semiconductor chip, comprising: gate structures formed within
a region of the semiconductor chip, the gate structures positioned in
accordance with a gate horizontal grid that includes at least seven gate
gridlines, wherein adjacent gate gridlines are separated from each other by
a gate pitch of less than or equal to about 193 nanometers, each gate
structure in the region having a substantially rectangular shape with a width
of less than or equal to about 45 nanometers and positioned to extend
lengthwise in a y-direction in a substantially centered manner along an
associated gate gridline, wherein each gate gridline has at least one gate
structure positioned thereon,
[29b] wherein each pair of gate structures that are positioned in an end-to-
end manner are separated by a line end-to-line end gap of less than or equal
to about 193 nanometers,
[29c] wherein at least one gate structure within the region is a first-
transistor-type-only gate structure that forms at least one gate electrode of
at least one transistor of a first transistor type and does not form a gate
electrode of a transistor of a second transistor type, wherein at least one gate
structure within the region is a second-transistor-type-only gate structure
that forms at least one gate electrode of at least one transistor of the second
transistor type and does not form a gate electrode of a transistor of the first
transistor type,
[29d] wherein a total number of first-transistor-type-only gate structures
within the region is equal to a total number of second-transistor-type-only
gate structures within the region;
[29e] a number of contact structures formed within the region of the
semiconductor chip, wherein each gate structure that forms any transistor
gate electrode within the region has a respective top surface in physical and
electrical contact with a corresponding contact structure having a
substantially rectangular shape, wherein each contact structure that contacts
a given gate structure that forms any transistor gate electrode does not
contact another gate structure, wherein each contact structure having a
corresponding length greater than or equal to a corresponding width is
oriented to have its corresponding length extend in an x-direction, wherein
each contact structure that contacts a corresponding gate structure is
positioned to overlap at least one edge of the corresponding gate structure,
[29f] wherein each transistor within the region is formed in part by a
corresponding diffusion region, wherein each diffusion region that forms
part of any transistor within the region has a substantially rectangular shape,
28
[29g] wherein the region includes at least four transistors of the first
transistor type and at least four transistors of the second transistor type that
collectively form a portion of a multiplexer or a portion of a latch, wherein
at least one first-transistor-type-only gate structure within the region is
included within the portion of the multiplexer or the portion of the latch,
wherein at least one second-transistor-type-only gate structure within the
region is included within the portion of the multiplexer or the portion of the
latch,
[29h] wherein the at least four transistors of the first transistor type include
a first transistor of the first transistor type, wherein the at least four
transistors of the second transistor type include a first transistor of the
second transistor type, wherein a first gate structure forms both a gate
electrode of the first transistor of the first transistor type and a gate electrode
of the first transistor of the second transistor type.
30. [30a] A semiconductor chip, comprising: gate structures formed within
a region of the semiconductor chip, the gate structures positioned in
accordance with a gate horizontal grid that includes a number of gate
gridlines, wherein adjacent gate gridlines are separated from each other by
a gate pitch of less than or equal to about 193 nanometers, each gate
structure in the region having a substantially rectangular shape with a width
of less than or equal to about 45 nanometers and positioned to extend
lengthwise in a y-direction in a substantially centered manner along an
associated gate gridline, wherein each gate gridline has at least one gate
structure positioned thereon,
[30b] wherein each pair of gate structures that are positioned in an end-to-
end manner are separated by a line end-to-line end gap of less than or equal
to about 193 nanometers,
[30c] wherein at least one gate structure within the region is a first-
transistor-type-only gate structure that forms at least one gate electrode of
at least one transistor of a first transistor type and does not form a gate
electrode of a transistor of a second transistor type, wherein at least one gate
structure within the region is a second-transistor-type-only gate structure
that forms at least one gate electrode of at least one transistor of the second
transistor type and does not form a gate electrode of a transistor of the first
transistor type,
[30d] wherein a total number of first-transistor-type-only gate structures
within the region is equal to a total number of second-transistor-type-only
gate structures within the region;
[30e] a number of contact structures formed within the region of the
semiconductor chip, wherein each of at least six gate structures within the
region has a respective top surface in physical and electrical contact with a
29
corresponding contact structure having a substantially rectangular shape,
wherein each contact structure is centered in an x-direction on the gate
structure with which it physical contacts,
[30f] wherein each contact structure that has the substantially rectangular
shape has a corresponding length greater than or equal to a corresponding
width and is oriented to have its corresponding length extend in an x-
direction, wherein each corresponding contact structure is in physical
contact with only one gate structure, wherein each corresponding contact
structure is positioned to overlap at least one edge of the gate structure
contacted by the corresponding contact structure,
[30g] wherein each transistor within the region is formed in part by a
corresponding diffusion region, wherein each diffusion region that forms
part of any transistor within the region has a substantially rectangular shape,
[30h] wherein the region includes at least four transistors of the first
transistor type and at least four transistors of the second transistor type that
collectively form a portion of a multiplexer or a portion of a latch, wherein
at least one first-transistor-type-only gate structure within the region is
included within the portion of the multiplexer or the portion of the latch,
wherein at least one second-transistor-type-only gate structure within the
region is included within the portion of the multiplexer or the portion of the
latch,
[30i] wherein both a gate electrode of a transistor of a first transistor type
and a gate electrode of a transistor of a second transistor type are formed by
a same gate structure within the region.
See 334 patent at cls. 1, 2, 5, 15, 29, 30 (annotated).
C. Claim Construction
As part of the Markman process, the following terms of the 334 patent were construed,
either as agreed between the parties or as determined by Order No. 34:
Claim Term Construction
“gate electrode” “that portion of a gate electrode feature that forms
a transistor gate”
“gate electrode feature(s)” / “gate
structure(s)”
“a feature comprising a transistor gate”
“diffusion region(s)” “selected portions of the substrate within which
impurities have been introduced to form the
source or drain of a transistor”
30
“[gate horizontal / first-metal vertical grid];
[second-metal horizontal] grid; [contact
vertical] grid; [third-metal vertical] grid;
[diffusion contact] grid”
“projected gridlines used at least during the
fabrication stage of integrated circuit
manufacturing”
“[gate / metal / contact] gridline(s)” “one of the lines making up a grid”
“gate pitch” “center-to-center separation distance between
adjacent gate features”
See generally Order No. 34 at 52, 55, 56, 59, 60, 62. Notably, for the reasons expressed in Order
No. 34, “contact structure(s)” and “gate contact structure(s)” were not construed. Id. at 61. The
parties do not now explicitly identify these terms, or any others, as requiring construction. See
RIB at 15-16; SIB at 23-24; see generally CIB; CRB; RRB; SRB. Thus, the scope of “contact
structure(s)” and “gate contact structure(s)” are addressed below in the infringement and validity
determinations to the extent required.
D. Infringement
According to Tela’s post-hearing briefing, the use, manufacture, or sale of the following
Accused Products, and those computer products containing the same, are alleged to infringe the
asserted claims of the 334 patent:
Claims Accused Products Alleged to Infringe
1, 2, 5, 15 Intel 14nm Products
1, 2, 5, 15 Intel 10nm Products
See CIB at 11. Of these claims, claim 1 is independent and claims 2, 5, and 15 depend from it.
Respondents contest Tela’s claims of infringement under claims 1 and 15. See RIB at 16-
49; RRB at 3-27. The Staff contests infringement under these claims, along with claims 2 and 5.
31
See SIB at 45. For the reasons discussed below, Tela has not shown infringement by any of the
Intel 10nm Products under any of the Asserted Claims. Tela has shown infringement for the
Broadwell, Skylake, Kaby Lake, Coffee Lake, and Cascade Lake models of Intel 14nm Products
under claims 1, 2, and 5. No Accused Products have been shown to infringe claim 15.
1. Claim 1
For reference, claim 1 of the 334 patent requires:
1. [1a] A semiconductor chip, comprising: gate structures formed within a
region of the semiconductor chip,
[1b] the gate structures positioned in accordance with a gate horizontal grid
that includes at least seven gate gridlines, wherein adjacent gate gridlines
are separated from each other by a gate pitch of less than or equal to about
193 nanometers, each gate structure in the region having a substantially
rectangular shape with a width of less than or equal to about 45 nanometers
and positioned to extend lengthwise in a y-direction in a substantially
centered manner along an associated gate gridline,
[1c] wherein each gate gridline has at least one gate structure positioned
thereon, wherein each pair of gate structures that are positioned in an end-
to-end manner are separated by a line end-to-line end gap of less than or
equal to about 193 nanometers,
[1d] wherein at least one gate structure within the region is a first-transistor-
type-only gate structure that forms at least one gate electrode of at least one
transistor of a first transistor type and does not form a gate electrode of a
transistor of a second transistor type, wherein at least one gate structure
within the region is a second-transistor-type-only gate structure that forms
at least one gate electrode of at least one transistor of the second transistor
type and does not form a gate electrode of a transistor of the first transistor
type,
[1e] wherein a total number of first-transistor-type-only gate structures
within the region is equal to a total number of second-transistor-type-only
gate structures within the region;
[1f] a first-metal layer formed above top surfaces of the gate structures
within the region of the semiconductor chip, the first-metal layer positioned
first in a stack of metal layers counting upward from top surfaces of the gate
structures, the first-metal layer separated from the top surfaces of the gate
structures by at least one insulator material, adjacent metal layers in the
stack of metal layers separated by at least one insulator material,
32
[1g] wherein the first-metal layer includes first-metal structures positioned
in accordance with a first-metal vertical grid, the first-metal vertical grid
including at least eight first-metal gridlines, each first-metal structure in the
region having a substantially rectangular shape and positioned to extend
lengthwise in an x-direction in a substantially centered manner on an
associated first-metal gridline,
[1h] each first-metal structure in the region having at least one adjacent first-
metal structure positioned next to each of its sides in accordance with a y-
coordinate spacing of less than or equal to 193 nanometers, wherein each
pair of first-metal structures that are positioned in an end-to-end manner are
separated by a line end-to-line end gap of less than or equal to about 193
nanometers; and
[1i] at least six contact structures formed within the region of the
semiconductor chip, wherein at least six gate structures within the region
have a respective top surface in physical and electrical contact with a
corresponding one of the at least six contact structures,
[1j] each of the at least six contact structures having a substantially
rectangular shape with a corresponding length greater than a corresponding
width and with the corresponding length oriented in the x-direction, each of
the at least six contact structures positioned and sized to overlap both edges
of the top surface of the gate structure to which it is in physical and electrical
contact,
[1k] wherein the region includes at least four transistors of the first transistor
type and at least four transistors of the second transistor type that
collectively form part of a logic circuit, wherein the logic circuit includes
electrical connections that collectively include first-metal structures
positioned on at least five of the at least eight first-metal gridlines.
334 patent at cl. 1 (annotated). Several disputes exist between the parties concerning whether Tela
has sufficiently shown the Accused Products meet various limitations of the claim. These are
addressed below. In view of the testimony of Dr. Foty that the Accused Products meet those
remaining limitations which are not in dispute, the Accused Products have been shown to meet
them as alleged. See CX-1144C at Q/A 1460-1648, 2395-2525 2 ; CIB at 11-52.
2 Starting at Q/A 1853, the question and answer numbering of Dr. Foty’s witness statement
(CX-1144C) becomes disjointed, and then again at Q/A 2549, and then again at Q/A 2606. Out
of an abundance of caution, citations in this initial determination to a particular numbered question
33
a. Gate structures positioned in accordance with a gate horizontal
grid
First, Respondents and Staff dispute that “gate structures positioned in accordance with a
gate horizontal grid” is met in the Intel 14nm Products and the Intel 10nm Products. RIB at 16-
19, 46; SIB at 27-32. Order No. 34 construed “grid” as it is used in this limitation as “projected
gridlines used at least during the fabrication stage of integrated circuit manufacturing.” Order No.
34 at 59.
Tela contends, generally, that the limitation is met in the Accused Products because Intel
utilizes a “1-D gridded approach” with “relevant layouts for the accused 14nm and 10nm Intel
products [that] specify the size, shape, and spacing of gate structures so that those gate structures,
when formed, have a substantially rectangular shape and are positioned in accordance with a gate
horizontal grid as claimed” and “the claimed gate horizontal grid is, in fact, used (or ‘projected’)
during manufacturing of the Intel 14nm and 10nm products pursuant to the ALJ’s construction.”
See CIB at 12-13. Specifically, Tela argues “projected” in this construction “merely means that
the grid is used to define the position of various features during the fabrication stage ‘with no
limitation on how that is achieved.’” Id. (citing Order No. 34 at 58; 334 patent at 30:4-5; 523
patent at 11:18-19). For both the Intel 14nm Products and the Intel 10nm Products, Tela argues
that one fabrication step involves “
” Id. at 15 (citing CX-1144C at Q/A 390-391; CPX-
0410C; JX-0210C at *87), 19 (citing CX-1144C at Q/A 414-419, 427; CPX-0030C). In its reply
brief, Tela explains:
and answer should be interpreted to apply to both the question bearing that number and the answer
bearing that number.
34
Intel uses the gate grid in these further processing steps by
(CX-1144C (Foty) at Q/A 417-
418; RX-0008C (Auth) at Q/A 103-105; Tr. (Auth) at 686:2-690:8
752:2-753:10
The fact that
one step of the fabrication stage allegedly does not use the grid does not
preclude infringement, particularly where other parts of the fabrication
stage do. See Tate Access Floors v. Maxcess Techs., 222 F.3d 958, 970 (Fed.
Cir. 2000) (“[O]ne cannot avoid infringement merely by adding elements if
each element recited in the claims is found in in the accused device.”).)
CRB at 4.
Tela provides the following SEM image of an Intel 14nm Product as evidencing the “grid”:
JX-0210C at *87; see CIB at 16. Intel asserts “[a] simple, visual inspection of the layouts and
resulting semiconductor shows that these features are formed along gridlines.” CRB at 2 (citing
JX-210C at *87).
35
Tela views Respondents’ expert, Dr. Subramanian, as “tacitly admit[ing]” the “structures
positioned in accordance with a gate horizontal grid” aspect of the limitation is met (CIB at 13
(citing Hr’g Tr. at 876:3-877:8)), although he also contends that “use of the word ‘projected’
changes that ordinary meaning and the scope of the claims”—an opinion Tela urges should be
rejected as contrary to basic principles of claim construction (id.). Tela contends “[n]othing in the
ALJ’s construction of ‘grid’ requires a lithographic projection of gridlines [during fabrication].”
CRB at 2 (citing Order No. 34 at 57), 4.
Respondents contend the limitation is not met in the Intel 14nm Products because “Tela’s
expert, Dr. Foty, offered no opinion in his witness statement or at the hearing regarding how any
alleged gate grid is used during fabrication.” RIB at 16. Respondents specify that “the ALJ’s
construction of ‘grid’ is not directed to lines arbitrarily drawn after the fact on layout files or the
final chip. For the ’334 patent the grid must be used during fabrication.” Id. at 16-17 (emphasis
in original). This is not done in either the Intel 14nm Products or Intel 10nm Products,
Respondents argue, because “[a]ll the evidence in the record of projection during fabrication
comes in the context of lithography . . . [yet]
in 14nm and 10nm process nodes. See id. at 17
(citing Hr’g Tr. at 424:19-425:9, 881:13-882:3; RX-0014C at Q/A 200-203, 299-303, 346-353;
RX-0008C at Q/A 106, 110), 18 (citing RX-0008C at Q/A 119; RX-0012C at Q/A 18), 46 (citing
RX-0014C at Q/A 408, 388-393); RRB at 4 (citing RX-0008C at Q/A101-107; RX-0014C at Q/A
300, 356-357; Hr’g Tr. at 283:14-284:3). Respondents add, “Tela also does not dispute that during
fabrication, the centerlines of the gates are determined not according to any pre-existing grid, but
by ” RRB at 3 (citing Hr’g Tr. at 283:14-
284:3).
36
Further, while lithography is used by Intel to form the structures, Respondents
explain these are “not the gates themselves [but]
that actually form the gate shapes.” Id. at 17 (citing
RX-0014C at Q/A 309-310; RDX-0016C at *149). Respondents claim it is undisputed these
do not fall along the alleged “gate gridlines.” Id. at 18 (citing RX-0014C at Q/A
405-410). Regardless, Respondents caution that in discussing these structures, Tela is attempting
to contravene Order No. 42—an order denying Respondents’ motion in limine but issued with the
understanding that Tela would not be presenting an infringement case which treated the
structures as the “grid” in the 334 patent. RRB at 5-6 (citing, inter alia, Order No. 42
at 2).
The Staff agrees with Respondents’ positions on this limitation. See SIB at 29 (“Tela
improperly vies the claimed ‘grid’ as only requiring similar end result structure/functionality for
the ‘gate structures,’ thereby contradicting the ALJ’s claim construction of ‘grid,’ which requires
a specific process limitation.”), 31 (“Intel uses a new technique known as
but not the gates
themselves. . . . it is undisputed that these shapes do not fall along the alleged
‘gate gridlines’ or otherwise correspond to the supposed ‘gate grid.’”); see generally SIB at 27-32;
SRB at 4-8.
This limitation is met in the Accused Products. In short, Respondents’ and Staff’s position
is based in the “projected” portion of Order No. 34’s construction—“projected gridlines used at
least during the fabrication stage of integrated circuit manufacturing”—and sees the absence of an
actual, observable, emission of light (or other energy/substance) in the fabrication of the Accused
Products as grounds for non-infringement. See, e.g., Hr’g Tr. at 876:20-877:1 (“With respect to
37
the gate, I have not offered an opinion for non-infringement, with respect to the gridlines, for the
purposes of the design rule analysis. However, I have offered the opinion that it is clear that there
is no use of gate gridlines consistent with the claims with respect to the projection requirements
associated therewith.”), 878:2-23 (“With respect to the second part of the answer, where I was
referring to fabrication, it would be you actually have a gate gridline projected during the
fabrication process. So for example, if you’re talking about lithography, I would expect gridlines
to be lithographically projected. And that is not the case in the accused products.”). This is not
the meaning of the ordered construction: “[i]n short, the claims (as opposed to the specification)
do not require projection of a ‘grid’ and do not require such projection to be either virtual or
actual.” Order No. 34 at 58. Further, as explained, the term “projected” was only put into the
ordered construction because all parties incorporated it into their respective proposed
constructions, and the term did appear at least once in the shared specification of the Asserted
Patents. See id. at 56 (citing 523 patent at 11:18-19).
The clearest use of the term “projected” in the specification refers to “grid” in a virtual, or
conceptual, sense:
FIG. 3A is an illustration showing an exemplary base grid to be projected
onto the dynamic array to facilitate definition of the restricted topology, in
accordance with one embodiment of the present invention. The base grid
can be used to facilitate parallel placement of the linear-shaped features in
each layer of the dynamic array at the appropriate optimized pitch. Although
not physically defined as part of the dynamic array, the base grid can be
considered as a projection on each layer of the dynamic array. Also, it
should be understood that the base grid is projected in a substantially
consistent manner with respect to position on each layer of the dynamic
array, thus facilitating accurate feature stacking and alignment.
334 patent at 13:1-13. Notably, there is no mention in either patent of what kind of equipment, or
when in the tightly controlled fabrication process, an actual, observable emission of a grid would
occur, or that it would even facilitate the act of positioning gate structures. See generally 334
38
patent; 523 patent. Obviously, the Accused Products and the like are not handmade, where
projections of light would be used as guides for a human operator and their work tool.
Additionally, the patent discusses “defin[ing]” the grid with consideration for light
interaction effects (effects that can be mathematically characterized by a “sinc function”) such that
“the spacing between gridpoints enables alignment of peaks in the sinc functions describing the
light energy projected upon neighboring gridpoints.” 334 patent at 13:33-45. Yet there is no
discussion of how the light from a “projected” grid—if any—is also taken into account. In sum,
the specification does not support interpreting the “grid” as an actual, observable projection of
light.
Despite this, Respondents suggest that in a plain and ordinary sense—and for those skilled
in the art—actual, observable projections of grids are used in “various” ways in processor
fabrication, but that Intel simply does not use those techniques. Respondents state:
Indeed, the unrebutted fact testimony of Intel witnesses is that Intel does not
project any gridlines during fabrication. RX-0008C (Auth) at Q/A 119; RX-
0012C (Kelleher) at Q/A 18. Dr. Subramanian likewise testified that
projected gridlines can be used during fabrication in various ways, but that
Intel’s fabrication process does not use those techniques. RX-0014C
(Subramanian) at Q/A 192-197; Tr. (Subramanian) at 881:13-882:3 (“I am
interpreting projected for use during fabrication to simply mean that there
are gridlines that are available, and are actually used during fabrication. And
that is not the case.”).
RIB at 18 (emphasis added). But the citation Respondents use to justify these “various” (i.e., more
than one) ways is the testimony of their expert, who was asked, “[h]ow might gridlines be
projected?” RX-0014C at Q/193. And Dr. Subramanian, an expert in the field (see RX-0007C at
Q/A 8-14), only observed that the 523 patent “claims at column 11, lines 19-23 that ‘the base grid
is projected in a substantially consistent manner with respect to position on each layer of the
39
dynamic array, thus facilitating accurate feature stacking and alignment’” (RX-0014C at Q/A
193). 3
This is far from evidence that “projected gridlines can be used during fabrication in various
ways,” and the quoted intrinsic evidence (523 patent at 11:19-23) is not even a statement on “ways”
in which projected gridlines are used. Rather, it is a statement on the benefits of consistent
“projection”—i.e., the facilitation of accurate feature alignment within the integrated circuit’s
many layers.
Dr. Subramanian’s invalidity opinions reinforce the conclusion that actual, observable
emissions of grids to facilitate gate placement during fabrication are not real processes. For the
Intel 45nm Product prior art reference, Dr. Subramanian admits that no such projection takes place
and so the limitation can only be taught if Tela’s infringement theory succeeds:
Under the Court’s construction of “gate horizontal grid” and “gate
gridlines,” there must be a projected grid used during the fabrication stage
of integrated circuit manufacturing. There is no such grid projected during
fabrication. However, under Tela’s infringement theory, any lines along
which the structures corresponding to poly are defined are gridlines. Under
this theory, Intel’s 45nm products’ gate structures are positioned in
accordance with a gate horizontal grid that includes at least seven gate
gridlines.
RX-0014C at Q/A 385. For the Becker prior art reference, however, Dr. Subramanian asserts there
is an explicit disclosure of a virtual grid which satisfies Order No. 34:
Becker describes at paragraphs [0050] to [0052] and [0066] that a base grid
facilitates parallel placements of the features that would include the
polysilicon features on 1403A to 1403G. Becker describes at paragraph
[0050] that the base grid is not a physical part of the dynamic array, so a
3 Additionally, although not cited by Respondents, Dr. Subramanian’s other testimony was
inconsistent regarding gridline projection. He testified “[i]f I was looking specifically at the
lithographic process, for example, one way to get gridlines during a lithographic process would be
to project it through the mask.” Hr’g Tr. at 881:21-24. But he also admitted this is not really
something that is done: “[t]hat is not done in the accused products. And in fact, there are no ways
that I am aware of, or that have been cited by Tela, that would establish that that is the case, that
there are gridlines used during fabrication.” Id. at 881:24-882:3 (emphasis added).
40
POSITA would understand it is virtual. Further, Becker describes in that
same paragraph that the base grid would be understood as a projection on
each layer to facilitate accurate fabrication of features. For those reasons,
the [] base grid satisfies the Court’s construction of “gate grid” and
“gridlines.”
Id. at Q/A 848. But this latter position is in conflict with his opinions on the Intel 14nm Products,
Intel 10nm Products, and Intel 45nm Product, to the effect that such virtual grids do not meet the
ordered construction. See RX-0014C at Q/A 837-842. And Respondents take a similar
inconsistent position in connection with invalidity. See, e.g., RIB at 112-113 (stating “Tela does
not dispute that Becker renders obvious each and every limitation of the ’334 patent” and “it
expressly discloses all elements, except for certain claimed ranges and spacings . . . .”).
In sum, the record does not support finding that “projected” gridlines need be anything
more than virtual, conceptual lines which “gate structures are positioned in accordance with.” 334
patent at cl. 1. No actual, observable projections are required. In fact, Dr. Subramanian’s
explanation of “projected” at the hearing is not necessarily inconsistent with this conclusion. See
Hr’g Tr. at 881:13-20 (“Q. And so you’re interpreting projection to require an actual projection
by projecting and moving onto a screen. Is that true? A. No. You asked me to provide an
example, and I gave an example. I am interpreting projected for use during fabrication to simply
mean that there are gridlines that are available, and are actually used during fabrication.”).
So “projected,” a term not found in claim 1 but incorporated into that claim’s construction,
includes virtual or conceptual lines, and the parties have waded into a construction of the
construction, which the Commission disfavors. See Certain Automated Teller Machines, ATM
Modules, Components Thereof, and Products Containing the Same, Inv. No. 337-TA-972,
Comm’n Op. at 6 (Jan. 30, 2017) (“We find the claim constructions on review to be both more
complicated, and less clear, than the claim terms themselves. Instead of focusing on interpreting
the claim language, the parties invited the ALJ to construe the constructions, and then to construe
41
the constructions of the constructions. Doing so caused the constructions to lose sight of the claim
language itself.”). In any event, Dr. Foty persuasively testified how the gate structures in the
Accused Products are “positioned in accordance with a gate horizontal grid that includes at least
seven gridlines,” where a grid is actual or virtual projected gridlines used at any point in the
fabrication of an integrated circuit. In particular, the cited layout files for the Accused Products
show the (CDX-0009C at *8-13; CDX-0011C at *7-9) and teardown
imagery shows the same (CDX-0009C at *20; CDX-0010C at *9). It does not matter that the
virtual gridlines are only observable after gate creation and through controlling the
to create the transistor gates. See RRB at 3. Intel
documentation shows this arrangement, or positioning, was “in accordance” with a planned layout
(i.e., not happenstance). See CX-1144C at Q/A 686 (citing CX-0661C at -56472, 56460), 1912-
1915 (citing CX-0135 at -13, -23; CPX-042 at -1512). Thus, the limitation is met in all Accused
Products.
b. First-metal structures positioned in accordance with a first-
metal vertical grid
Second, Respondents and Staff dispute whether “first-metal structures positioned in
accordance with a first-metal vertical grid” is met in the Intel 14nm Products and Intel 10nm
Products. RIB at 19-20, 46; SIB at 27-32.
For this limitation, Tela contends the “M0 layer” in the Intel 14nm Products and the “M0
layer” in the Intel 10nm Products both include structures positioned “using a 1-D gridded
approach” in satisfaction of the claims; where “M0” “refers to the first metal interconnect layer
above the gates.” CIB at 32, 34. Tela primarily relies on Intel’s design rules as evidence of the
“1-D gridded approach” (id. at 32-37 (citing, inter alia, CX-1144C at Q/A 330-367, 438-440, 889-
891, 1540-1570, 2034-2036, 2456-2470; RX-0008C at Q/A 145; CPX-0497C; CPX-0341C; CPX-
42
0097C)) in addition to “SEM images of the M0 interconnects” (id. at 34 (citing CX-1144C at Q.A
901-904, 1558; CDX-0008C at *68), 37 (citing CX-1144C at Q/A 2027-2030, 2462-2463; CDX-
0010C at *36)). As one example, Tela argues the design rules specify
Id. at 33
(citing, inter alia, CX-1144C at Q/A 270, 330, 709; CPX-0497C at *780-781), 35 (citing, inter
alia, CX-1144C at Q/A 270, 367, 709; CPX-0097C at *5851-5856).
Tela views Respondents’ non-infringement position as “premised upon a fixed pitch
requirement” for any claimed “grid.” See CIB at 38. Tela contends this cannot be correct, in part
under principles of claim differentiation and the language of dependent claim 19, which recites
“each first metal structure positioned on any first-metal gridline within the region is positioned
next to and spaced apart from at least one other first-metal structure in accordance with a fixed
pitch.” Id. at 38-39 (citing 334 patent at cl. 19; Hr’g Tr. at 808:14-809:6, 812:16-20). Tela adds
that Respondents’ presentation of M0 layouts next to each other with varying line widths
juxtaposes images that are not meant to be viewed together and not otherwise in conflict with the
claims. See id. at 39 (citing RPB at 22; Hr’g Tr. at 681:19-25); CRB at 11. To the extent
Respondents argue there is no “projected” grid in connection with fabrication of the first-metal
layer, Tela incorporates its discussion of this issue in the “gate structures” limitation. CRB at 9.
In their initial brief, Respondents rely on their discussion of the same limitation in the
context of the 523 patent and summarize:
Intel’s is not gridded, nor are any Metal-
0 structures positioned in accordance with a grid. Moreover, as with the gate
grid limitation discussed above, Tela’s expert offers no opinion at all
regarding how any alleged first-metal grid is used during fabrication (as
opposed to Tela’s expert drawing alleged gridlines after the fact on layout
shapes or the final structures).
43
RIB at 20. In the 523 patent discussion, Respondents first discuss an emphasis on placing features
at an “optimized pitch.” Id. at 132 (citing 523 patent at 11:14-17, 11:39-47, 15:21-35, Fig. 3A;
RX-0014C at Q/A 211-218). Respondents then acknowledge
but stress the “metal-0” layer (that which is accused of being
the “first-metal” layer in the claim) is not and its layout is left to designers. RIB at 134-135 (citing,
inter alia, RPX-1990C at *059, 076; RPX-1991C at *100, 120; RX-0008C at Q/A 139-143; Hr’g
Tr. at 723:22-726:8), 143. Respondents contend “[i]n other words, in the Metal-0 layers, there is
no defined ‘grid’ that shapes must be positioned in accordance with—whether uniform pitch or
otherwise [because]
” Id. at 135-136 (citing RX-0008C at
Q/A 128-129; Hr’g Tr. at 722:4-21); see id. at 136 (“
”),
136-137 (“because Intel does not define any ‘JULG¶ʊUHJXODURULUUHJXODUʊIRUWKH0HWDO-0 shapes
to be positioned in accordance with, the Accused Products do not meet the claimed requirement
that the ‘first-metal structure layout shapes are positioned in accordance with a …grid.’”), 138
(“Dr. Foty also attempts to rely on Intel layout files for Metal-0, such as the following, which
”), 139 (“these lines—added after-the-fact
by Tela’s expert—are not used by Intel.”). Respondents summarize:
As discussed above, the claim requires that there be a “first-metal vertical
grid,” with layout shapes “positioned in accordance with” that grid and,
more specifically, “positioned to extend … in a substantially centered
manner along” an associated gridline. However, instead of opining that
there was a grid and that, during layout, Intel positioned shapes in
accordance with it, Dr. Foty opined, in effect, that there were shapes and
that an (irregular) grid could be drawn in accordance with those shapes after
44
layout. His ex-post analysis inverts the claim language, getting it backward.
RX-0014C (Subramanian) at Q/A 216-20; Tr. (Subramanian) at 806:5-17.
RIB at 140.
Respondents also incorporate their argument regarding gridlines that are “projected” as
discussed with the prior limitation, “gate structures positioned in accordance with gate horizontal
grid,” noting “Intel does not project or otherwise use any such grid to position the Metal-0 layout
shapes, [therefore] the Accused Products do not satisfy the ALJ’s construction.” RIB at 141 (citing
RX-0014C at Q/A216-218; Hr’g Tr. at 723:9-15).
In their reply brief, Respondents contend Tela’s expert, Dr. Foty, inappropriately relies
only on layout drawings for this limitation, which are only relevant to the 523 patent under the
constructions contained in Order No. 34. See RRB at 10-11 (citing CX-1144C at Q/A 2457-2467)).
In this way, Respondents argue any allusion to used during fabrication to
meet this limitation are untimely and should be ignored under Ground Rule 13.1. See id.
The Staff’s discussion of this limitation is incorporated into its discussions of “gate
structures” and “grid” summarized above, and aligns with Respondents. See SIB at 27-34; SRB
at 4-8.
The limitation is met. Much of the parties’ dispute has been resolved with the prior
limitation “gate structures positioned in accordance with a gate horizontal grid.” Namely, no
actual, observable projection of a grid is required, and the positioning of structures according to a
documented plan indicates the positioning is “in accordance with” (i.e., not happenstance).
Respondents’ additional point that “grid” is not met by the Metal-0 (M0) structures because
there are no “gridding rules” which Intel designers must abide by (see RIB at 135-137) is not
accurate. Respondents do not challenge that Intel’s design rules require
45
See CIB at 33, 35-36; see, e.g., CX-1144C at Q/A 329-333, 358-367; CDX-0012C
at *17 (citing CPX-0377C at -780); CPX-0497 at -780-781; Hr’g Tr. at 724:9-22; RPX-1991C at
120; RPX-0776C at 567. These are certainly rules, and their implementation results in the
and teardown imagery of the
Accused Products, i.e., a first-metal “grid.” This makes certain testimony from Intel witness
—not credible. RIB at 141 (citing Hr’g Tr. at 722:1-732:7).
The fact that the rules for the metal-0 structures allow
does not defeat infringement as Respondents
contend. See RIB at 138-141, 143; RRB at 11. The intrinsic evidence does not support reading
this characteristic into a construction of “grid” under principles of claim differentiation.
Specifically, claim 19, dependent on claim 1, explicitly requires a single, fixed pitch for the first-
metal structures. See 334 patent at cl. 19 (“The semiconductor chip as recited in claim 1, wherein
each first-metal structure positioned on any first-metal gridline within the region is positioned next
to and spaced apart from at least one other first-metal structure in accordance with a fixed pitch.”).
Claims 13 and 18 are similar. See 334 patent at cls. 13 (“The semiconductor chip as recited in
claim 2, wherein each first-metal structure in the region is positioned next to at least one other
first-metal structure on a first side in accordance with a first-metal pitch and is positioned next to
at least one other first-metal structure on a second side in accordance with the first-metal pitch”),
18 (“The semiconductor chip as recited in claim 1, wherein each of at least four of the first-metal
gridlines has at least two first-metal structures positioned thereon within the region, wherein each
46
of the at least two first-metal structures positioned on the at least four of the first-metal gridlines
is positioned next to and spaced apart from at least one other first-metal structure in accordance
with a fixed pitch.”). Curtiss-Wright Flow Control Corp. v. Velan, Inc., 438 F.3d 1374, 1380
(Fed. Cir. 2006) (“‘[C]laim differentiation’ refers to the presumption that an independent claim
should not be construed as requiring a limitation added by a dependent claim.”). This
differentiation between claim 1, which does not explicitly require a fixed pitch, and other claims,
which do, is not automatically dispositive but does weaken Respondents’ reliance on the
specification, which emphasizes structures placed at an “optimized pitch.” Interactive Gift
Express, 256 F.3d at 1331 (“In construing claims, the analytical focus must begin and remain
centered on the language of the claims themselves, for it is that language that the patentee chose
to use to ‘particularly point [ ] out and distinctly claim [ ] the subject matter which the patentee
regards as his invention.”). Thus, irregular centerline-to-centerline distances between first-metal
structures (i.e., non-uniform pitch) cannot be a ground for non-infringement under claim 1. Indeed,
Dr. Subramanian admitted at the hearing that fixed pitch was not a requirement. Hr’g Tr. at
808:18-809:5 (discussing similar limitation in 523 patent), 812:16-813:24 (discussing same).
Correspondingly, the fact that the rules, allowing for
(see RIB at 136; RRB at 72-
73, 75) is not cause for concern, either. There is no restriction in the claims themselves, or that
can be read in from the specification, that would limit where the grid is located. Indeed, the 334
patent discloses and illustrates that gridding systems may vary in different regions. 334 patent at
Fig. 3B, 13:26-32. Regardless, the analysis here must be focused on the actual products at issue
and not the full gamut of allowable designs under Intel’s rulebook.
47
Images of the Accused Products demonstrate that the pertinent structures are “positioned
in accordance with a first-metal vertical grid”; the upper two images relate to the Intel 14nm
Products and the lower to the Intel 10nm Products:
CRB at 8 (citing JX-210C at *84; CPX-0100C at -2152);
CDX-0010C at *40, 39. As shown, the “first-metal” structures are positioned in a linear and
parallel fashion. Thus, they are positioned in the 334 patent’s “grid,” albeit
which distinguishes them from the gate structures discussed above. And the arrangement is
intentional (i.e., not happenstance) so the arrangement satisfies the “in accordance with”
requirement. Accordingly, the Accused Products meet this limitation.
48
c. Each gate gridline has at least one gate structure positioned
thereon
Third, Respondents and Staff dispute whether “each gate gridline has at least one gate
structure positioned thereon” is met in the Intel 10nm Products, while only Respondents challenge
the limitation in the Intel 14nm Products. RIB at 20-22, 46-48; SIB at 35-39.
For this limitation, Tela refers to its discussion of “gate structures positioned in accordance
with a gate horizontal grid” and adds, for all Accused Products, that when more than one gate
structure is positioned on a given gate gridline in the region, the end-to-end separation is always
less than or equal to 193 nanometers, as required by claim 1. CIB at 24 (citing, inter alia, CX-
1144C at Q/A 724, 1492-1506, 1930, 2419-2423; CDX-0009C at *14-20; CDX-0011C at *10-12).
Further, Tela contends the Intel 14nm Products’ use of
on some
gridlines does not defeat infringement, as Tela has:
[I]dentified regions that include seven gate gridlines, each with at least one
transistor gate positioned on each gridline. For example,
each include a region that includes seven gate
gridlines, with each gate gridline having at least one transistor gate
positioned thereon.
CIB at 25; CRB at 14, 16. Regardless, Tela contends that embodiments within the 334 patent
show regions with non-dummy gate structures on six of seven lines, demonstrating that dummy
gates can constitute “gate structures” required for this limitation. Id. at 26 (citing 334 patent at
Fig. 5); CRB at 16. Tela claims that
are properly considered as dummy gates and thus meet the
construction for “gate structures” in the same way. CRB at 17 (citing, inter alia, CX-1144C at
Q/A 583-584).
49
Tela also disputes that it has in any way been inconsistent with its identification of regions
and gridlines across claim elements. See id. at 25-26. In its reply brief, Tela discusses the 14nm
in particular, and alleges Respondents “identify a portion that was not relied
on by Tela or Dr. Foty,” noting that Tela instead “identified an infringing portion of the same cell
with seven gate gridlines, each with at least one transistor gate positioned thereon (annotated in
red)”:
CRB at 14. For the Intel 10nm Products, Tela again contends Respondents identify a different set
of gridlines than what it relied on for proving up the limitation:
50
CRB at 15. In sum, Tela takes the position:
It is black letter law that “[t]he addition of features does not avoid
infringement, if all the elements of the patent claims have been adopted.”
Northern Telecom, Inc. v. Datapoint Corp., 908 F.2d 931, 945 (Fed. Cir.
1990). The fact that Respondents identified seven gate gridlines that
allegedly do not infringe under their interpretation of “gate structure”
elsewhere in the cell does not avoid the seven gate gridlines within the Intel
14nm Products that infringe, even under Respondents’ interpretation
requiring transistor gates on each gate gridline.
Id. at 14-15; see id. at 16 (“In other words, if the identified region includes seven gate gridlines
where adjacent gate gridlines are separated by a gate pitch, then the claim is met. An eighth gridline
that does not meet the claims is immaterial.”).
In opposition, Respondents contend “[t]he claim term ‘gate structure’ has been construed
to mean ‘feature comprising a transistor gate.’ But the alleged grids include multiple gridlines
with no transistor gate positioned thereon.” RIB at 20. For the Intel 14nm Products, Respondents
argue “[f]or every 14nm cell Dr. Foty identifies, there is an alleged gridline that Dr. Foty numbers
and relies on, but that do not form transistor gates.” Id. at 21-22 (citing
RX-0014C at Q/A 242-245; CDX-0008C at *16-21; CDX-0009C at *14-20); RRB at 8-9 (“None
51
of the regions identified by Dr. Foty has a transistor gate on each gridline”). For the Intel 10nm
Products, Respondents argue they use Id. at 20.
This technique results in
Id. at 47-48 (citing RX-0014C at Q/A 233-234; CPX-0235C at *579; RPX-1704C; RPX-1708C).
Respondents view Tela’s attempt to use as “gate structures” as improperly rearguing
claim construction and as otherwise not supported by the specification. RRB at 9-10.
Additionally, for these products, as opposed to the Intel 14nm Products, Respondents argue
Tela has inconsistently identified what the claimed “region” is across different limitations and
improperly excluded gridlines that are otherwise present in the “region” which do not contain gate
structures, all in an attempt to avoid non-infringement. See RIB at 48 (citing, inter alia, CDX-
0011C at *10, 11, 12, 17, 18; RX-0014C at Q/A 235-236, 243-245; RDX-0016C at *16; DCX-
0010C at *41).
As noted, the Staff finds this limitation is met by the Intel 14nm Products, but not for the
Intel 10nm Products. The Staff agrees with Tela that in the Intel 14nm Products,
which lie along a gridline, sufficiently qualify as “feature[s] comprising a transistor gate”:
52
The claim term “gate structure” has been construed to mean “feature
comprising a transistor gate.” (Order No. 34). On its face, the formal
construction does not explicitly allow for an inactive “dummy” transistor
gate to replace an active, working transistor gate. But the ALJ’s claim
construction considered the arguments by all parties that inactive, “dummy”
gates were permissible on gridlines based on the intrinsic evidence and thus
did not intend to exclude “dummy” gates, as no party argued for such a
narrow construction.
SIB at 35-36. The trenches used in the Intel 10nm Products, on the other hand, cannot be “gate
structures” according to the Staff, and the Staff relies on the same cell layout image as Respondents
(reproduced above) to show non-infringement. See id. at 36-38 (citing, inter alia, RX-0014C at
Q/A 233-234); SRB at 10-11. Further, Tela’s use of less than all gridlines in a “region” is
improper, according to Staff, because “if more than seven gate gridlines exist in a selected region,
then every gridline (not just seven) must be shown to have ‘at least one gate structure positioned
thereon.’” SRB at 9. Last, the Staff agrees with Respondents that Tela has inconsistently and
improperly identified the “region” across claim limitations, again citing the same evidence as
Respondents. See SIB at 39 (citing, inter alia, RX-0014C at Q/A 235-236, 243-245; RDX-0016C
at *16; CDX-0010C at *41).
Unlike some other disputes, resolution of this one depends upon the details of each of the
cells. For background, these include:
Intel 14nm Products Intel 10nm Products
See, e.g., CDX-0009C; CDX-0011C; CIB at App’x B.
53
Resolution of this dispute also requires addressing two claim construction issues. First,
Order No. 34 construed “gate structure” as a “feature comprising a transistor gate.” Order No. 34
at 55. Thus, a feature in an Accused Product that does not, somewhere along its length, function
as a transistor gate is not a “gate structure.” See Order No. 34 at 54. Although Respondents’ claim
construction briefs proposed use of the term “dummy gate” to describe such a feature, that
proposed term was not construed because “the dispute over how to precisely define a ‘gate
electrode feature’ that does not form a transistor gate at all” had been rendered moot by the
withdrawal of previously-asserted patents. Id. Although that dispute remains moot, because the
term “dummy gate” is not used in the 334 patent, a “gate structure” still must “form[] a gate
structure over at least some of its length,” and a feature that otherwise appears to qualify as a gate
structure, but does not because it does not form a transistor, will informally be referred to as a
“dummy gate.” Id.
Second, Tela contends that not all gate gridlines in a region must possess gate structures,
so long as at least seven gridlines with gate structures can be identified. See CRB at 16 (an eighth
gridline without a gate structure is “immaterial”). This is a question of claim construction that was
not addressed in Order No. 34. The briefing on this point is sparse; Tela’s only real argument is
that its proposed construction must be proper because otherwise the embodiments shown in figures
5 and 14 of the 334 patent would be excluded. See CRB at 16. But these figures do not themselves
match a host of other claim limitations, and patentees have the freedom to draft claims covering
different embodiments. See RRB at 9-10 (citing Intamin Ltd. v. Magnetar Techs. Corp., 483 F.3d
1328, 1337 (Fed. Cir. 2007)). Accordingly, the claim language “each gate gridline has at least one
gate structure positioned thereon” is accorded its plain and ordinary meaning: each gate gridline
within an identified region must have at least one gate structure positioned thereon.
54
Given these constructions, and with respect to the Intel 14nm Products, Respondents argue
“[f]or every 14nm cell Dr. Foty identifies, there is an alleged gridline that Dr. Foty numbers and
relies on, but that do not form transistor gates.” RIB at 22 (citing RX-
0014C at Q/A 242-245; CDX-0008C at *16-21; CDX-0009C at *14-20). Based on the numbered
annotations Dr. Foty provides and relies on to show how the limitation is met in each cell (see CX-
1144C at Q/A 1495-1500; CDX-0009C at *14-19), some of the gridlines do include
This is shown in the cells below where there is no yellow or green substrate region on both
sides of the orange structures (see, e.g., CX-1144C at Q/A 267-269; RX-0014C at Q/A 230) on a
numbered line:
55
56
Thus, these cells do not meet the limitation. The remaining cells for the Intel 14nm Products do
not suffer from this problem and therefore do meet the limitation; this conclusion applies to
(CDX-0009C at *15) and (CDX-0009C at *16).
Accordingly, the following cells from the Intel l4nm Products have not been shown to meet
this limitation: Dr. Foty’s
demonstratives indicate the latter three cells comprise the entirety of cells for the Goldmont,
Goldmont Plus, Ice Lake Chipset, and Cannon Lake Chipset products. CDX-0012C at *25-26.
Thus, the Accused Products including these models do not infringe. The remaining Intel 14nm
Products use one or both of so they meet the limitation.
With respect to the Intel 10nm Products, Respondents’ and the Staff’s argument that Intel’s
use of “results in lines without any gate
structures positioned thereon” (RIB at 47 (citing RX-0008C at Q/A 15; RX-0014C at Q/A 229-
57
331; RX-0157 at *10)) is not persuasive. Here, helpfully, Respondents and Dr. Subramanian are
more specific and provide demonstratives for each of the three 10nm cells, showing the pertinent
These demonstratives, however, do not match the gridlines Tela and Dr. Foty
identify and rely on to show the limitation is met (CX-1144C at Q/A 2420-2422 (citing CDX-
0011C at *10-12)) as shown below:
4 The demonstrative for this particular limitation for cell omits the
numerical annotations 1-9, but the identified gridlines are the same. See CDX-0011C at *10.
58
Tela’s identification of gridlines in the cell appears to include, and
See CDX-0011C at *7, 10; see also CDX-0012C at
*38 (citing CPX-0237C at *3). Thus, this cell may not meet the limitation, if the layout files are
taken at face value. But Dr. Auth and Dr. Subramanian testified unequivocally that the Intel 10nm
Products RX-0008C at Q/A 32, 135 (“
”); RX-0014C at Q/A 229-242; RX-0157
at *10. Therefore, what appears to be a must instead be a gate structure.
And although the image of this cell includes structures (on the right hand side) that, if considered
part of the claimed “region,” do not meet the claim limitation at issue, they are clearly not part of
the nine gridlines Dr. Foty identifies in his analysis; nothing in Dr. Foty’s testimony suggests that
the “region” he analyzes is the entirety of the cell. See CDX-0011C at *4, *7, *10; CX-1144C at
Q/A 2397 (the cell “shows a region of a semiconductor ship that includes gate structures,” which
have been “highlighted”). In other words, the dummy gates are extraneous to the claimed “at least
seven gate gridlines” and Dr. Foty was not inconsistent in his identification of the “region” across
59
different claim elements, as Respondents and the Staff assert. See RIB at 48; SIB at 39. On
balance, the totality of the evidence shows that the limitation is met in all of the Intel 10nm
Products.
d. Contact Structures
Fourth, Respondents tersely dispute whether “at least six contact structures” is met in the
Intel 10nm Products. See RIB at 40. The Staff alludes to the same dispute without specific
discussion. See SIB at 39, 42. No party disputes the limitation is met in the Intel 14nm Products.
For this limitation, Tela contends at least six gate contract structures are shown in
the layout files of the Intel 10nm Products “that extend over a single gate similar to Figure 7B of
the ’334 Patent . . . .” CIB at 43 (citing CX-1144C at Q/A 2482-2484). Tela explains that after
holes are patterned to expose the top surface of the gates, “[t]he
” Id. at 44 (citing CX-1144C at Q/A
315-320; RX-0014C at Q/A 167).
Tela views any argument that “contact structures” must be distinct from other claimed
“first-metal structures” as inconsistent with Intel documentation and contrary to guidance provided
in Order No. 34. CIB at 45 (citing Order No. 34 at 60-61); see CIB at 29 (citing, inter alia, CPX-
0232C at -2503; CPX-0030C at -1493; CX-1144C at Q/A 436). Tela argues there is “nothing in
the claims or the specification that requires the gate contact to be a separate structure or separately
formed from the metal interconnect structure to which it connects.” Id. at 31 (citing Cannon
Rubber Ltd. v. The First Years, Inc., 163 F. App’x 870, 877 (Fed. Cir. 2005)).
In opposition, Respondents argue “[i]nitially, the Accused 10nm Products do not include
the claimed contacts at least because the claims separately recite contact and first-metal structures,
but Dr. Foty does not identify any contact structure distinct from the first-metal structures.”
60
RIB at 40 (citing RX-0014C at Q/A 176). Respondents explain more specifically, “it is undisputed
that the
”
RRB at 11-12 (citing Hr’g Tr. at 312:8-21; RX-0008C at Q/A 160-163; RX-0014C at Q/A 170).
As noted, the Staff alludes to a similar dispute by identifying the specific claim language
“contact structures” as limitation 1[i] (SIB at 39) and then asserting limitation 1[i] is not met (id.
at 42), although its discussion focuses on a lack of “overlap.”
This claim element was not previously construed. See Order No. 34 at 61. The Federal
Circuit has held that separate claim elements do not necessarily require separate structures within
an accused device or the prior art when there is nothing in the claims or specification to suggest
such a restriction. See Powell v. Home Depot U.S.A., Inc., 663 F.3d 1221, 1231-32 (Fed. Cir.
2011); Linear Tech. Corp. v. Int’l Trade Comm’n, 566 F.3d 1049, 1055 (Fed. Cir. 2009) (“We
agree with the Commission's construction of ‘second circuit’ and ‘third circuit,’ defining the terms
broadly to not require entirely separate and distinct circuits. Indeed, there is nothing in the claim
language or specification that supports narrowly construing the terms to require a specific
structural requirement or entirely distinct ‘second’ and ‘third’ circuits. Rather, the ‘second’ and
‘third’ circuits must only perform their stated functions.”). Nothing in the 334 patent suggests
“contact structures” cannot be integral to or formed at the same time as the “first-metal structures,”
or that there would be an advantage to keeping them distinct. Respondents have certainly not
explained, with reference to either the claims or the specification, why the restriction is
appropriate. Therefore, this element is construed as including both structures integral to the first-
metal structures and separate from the first-metal structures, so long as they contact the gate
structures. And because the evidence shows that the structures, which are formed
61
the higher-up, linear “first-metal structures,” do contact the gate structures, they
qualify as contact structures. Accordingly, the limitation is met in the Intel 10nm Products.
e. Each of the at least six contact structures positioned and sized
to overlap both edges of the top surface of the gate structure to
which it is in physical and electrical contact
Fifth, Respondents and Staff dispute whether “each of the at least six contact structures
positioned and sized to overlap both edges of the top surface of the gate structure to which it is in
physical and electrical contact” is met in the Intel 10nm Products. RIB at 40-46; SIB at 39-42.
No party disputes the limitation is met in the Intel 14nm Products.
For this limitation, and the Intel 10nm Products in particular, Tela contends Intel’s design
rules “
” CIB at 47 (citing CPX-0341C at 5827-28; CX-1144C at Q/A
315-319, 1964, 1983, 2497-2498; CPX-0030C at 1493; CX-0662 at *7, 9). Tela adds:
An example of a overlapping both edges of the top surface
of the gate structure is illustrated in teardown images of an Intel 10nm
Product (Intel i3-8121U), which show a cross-section and top view of a
further confirming that this claim element is met. (CX-
1144C (Foty) at Q/A 1990-95, 2497-98; CDX-0010C.27-28.)
Id. More specifically, Tela argues “[n]othing in claim 1 requires the bottom surface of the contact
structure to overlap the edges of the top surface of the gate structure. And the
and as such
is ‘sized to overlap both edges of the top surface of the gate structure’ as required by the claims.”
CRB at 18. Tela shows this upper-edge overlap in the below images:
62
CRB at 49. Tela rejects a claim interpretation which would require “the bottom surface of the
contact that physically contacts the top of the gate must overlap the edges of the gate.” See id. at
49-50.
In opposition, Respondents argue its
RIB
at 41 (citing RX-0008C at Q/A 160, 161); RRB at 12. Thus, according to Respondents, there is
no overlap as shown in teardown images:
63
RIB at 42-43 (citing RX-0014C at Q/A 168; JX-0220 at *1). Respondents argue Tela’s reliance
on layout file shapes cannot overcome the actual structure of the fabricated device (see RIB at 43;
RRB at 12), and Tela’s expert admitted that the green-box annotations in a demonstrative showing
the required overlap between the first-metal layer and the gate structure were misleading (RIB at
44 (citing CDX-0010C at *28; Hr’g Tr. at 310:15-311:13, 305:9-313:1, 468:1-469:6)), as shown
below:
64
(RIB at 45). Respondents contend the top of the yellow “T” shape in the above image cannot
fulfill the requirement for “overlap” because “the claim language addresses overlap at the top
VXUIDFH RI WKH JDWHʊZKHUH WKH VWUXFWXUHV FRQWDFWʊQRW VRPH IODUH-out of a broader Metal-0
structure far above the contact interface, as Dr. Foty argues.” Id. (citing Hr’g Tr. at 312:22-313:1;
334 patent at 21:26-37). Respondents suggest Dr. Foty admitted at cross-examination that the
claimed concept addresses the interface between the top of the gate and the bottom of the contact
structure” (id. at 45-46 (citing Hr’g Tr. at 470:2-471:4)) and that the position was never properly
noticed by Tela (RRB at 13-14 (citing CX-1144C at Q/A 318, 2492-99)). The Staff concurs with
Respondents on all these points. See SIB at 39-42; SRB at 11-14.
Resolution of this dispute requires construction of claim language not previously
interpreted. Under a plain reading of the claim, and as supported by the specification, the “overlap”
must actually be at the interface between the gate structure and the contact structure. The claim
states “each of the at least six contact structures positioned and sized to overlap both edges of the
top surface of the gate structure to which it is in physical and electrical contact.” 334 patent at cl.
1. Clearly the emphasis here is on contact (hence the name “contact structures”) with the “top
65
surface” of the gate structure, i.e., the interface between two dissimilar materials. A person of
ordinary skill would surely understand the “overlap” to occur at this location, namely, the point of
contact. The specification reinforces this view, stating, “it should be appreciated that in the present
invention, the gate electrode contact 601 is oversized in the direction perpendicular to the gate
electrode feature 501 to ensure overlap between the gate electrode contact 601 and the gate
electrode feature 501.” Id. at 17:50-55. At the hearing, Dr. Foty acknowledged misalignment
between these two structures was a concern. See Hr’g Tr. at 470:2-471:1. Such misalignment can
be seen in, for example, the red annotation to teardown imagery of one of the DI Products:
CX-1144C at Q/A 2652 (citing CX-0684 at -56335-51 (annotated)). It is clear that overlap at the
point of interface would help ensure contact and alleviate misalignment between the structures.
Tela’s proposed T-shape for “overlap” would not do the same.
With this construction in mind, the evidence indisputably shows the limitation is not met
in the actual Intel 10nm Products. As Tela itself explains, after holes are patterned to expose the
top surface of the gates,
CIB at 44 (citing CX-1144C at Q/A 315-320; RX-0014C at Q/A 167).
66
Teardown imagery shows this results in coextensive (i.e., no overlap) contact at the interface
between the contact structure and the gate structure, as presented above. See, e.g., RX-0014C at
Q/A 168; JX-0220 at *1. Thus, the limitation is not met in the Intel 10nm Products.
2. Claim 2
For reference, claim 2 of the 334 patent requires:
2. [2a] The semiconductor chip as recited in claim 1, wherein the region
includes a second-metal layer including second-metal structures positioned
in accordance with a second-metal horizontal grid, the second-metal
horizontal grid including at least eight second-metal gridlines,
[2b] each second-metal structure in the region having at least one adjacent
second-metal structure positioned next to each of its sides in accordance
with an x-coordinate spacing of less than or equal to 193 nanometers, each
second-metal structure in the region having a substantially rectangular
shape and positioned to extend lengthwise in the y-direction in a
substantially centered manner along an associated second-metal gridline,
[2c] wherein at least eight of the at least eight second-metal gridlines have
at least one second-metal structure positioned thereon, wherein each pair of
second-metal structures that are positioned in an end-to-end manner are
separated by a line end-to-line end gap,
[2d] wherein the second-metal layer is positioned second in the stack of
metal layers counting upward from the top surfaces of the gate structures.
334 patent at cl. 2. Claim 2 is not identified as in dispute by Respondents. See generally RIB.
The Staff, however, asserts that claim 2’s recitation of “grid(s)” and “gridlines” invokes the same
grounds for non-infringement as discussed above in connection with claim 1. See SIB at 45.
Although it is unclear to which “grid” limitation of claim 1 the Staff refers—“gate horizontal grid”
or “first-metal grid”—as determined above the linear and parallel positioning of both
corresponding elements (gate and M0 layers) within the Accused Products satisfies “positioned in
accordance with a . . . grid.” With no other elements of claim 2 in dispute, the Accused Products
which infringe claim 1 have also been shown to meet the limitations of claim 2 by the testimony
of Dr. Foty. CX-1144C at Q/A 1651-1709, 2527-2567.
67
3. Claim 5
For reference, claim 5 of the 334 patent requires:
5. The semiconductor chip as recited in claim 2, wherein the at least six
contact structures are positioned in accordance with a contact vertical grid,
the contact vertical grid including contact gridlines extending in the x-
direction, each of the at least six contact structures positioned to extend
lengthwise in the x-direction in a substantially centered manner along an
associated contact gridline, and at least two of the at least six contact
structures positioned to also extend lengthwise in the x-direction in a
substantially centered manner along a corresponding first-metal gridline.
334 patent at cl. 5. Claim 5 is not identified as in dispute by Respondents. See generally RIB.
Again, though, the Staff asserts that claim 5’s recitation of “grid(s)” and “gridlines” invokes the
same grounds for non-infringement as discussed above in connection with claims 1 and 2. See
SIB at 45. And as with claims 1 and 2, although it is unclear from which of the two “grid”
limitations the Staff is incorporating its argument, the Accused Products which infringe claim 1
have also been shown to meet the limitations of claim 5 by the testimony of Dr. Foty. CX-1144C
at Q/A 1710-1730, 2568-2578.
4. Claim 15
Claim 15 of the 334 patent requires:
15. The semiconductor chip as recited in claim 1, wherein each transistor
within the region of the semiconductor chip is formed in part by a
corresponding diffusion region, wherein each diffusion region that forms
part of at least one transistor within the region of the semiconductor chip
has a substantially rectangular shape.
334 patent at cl. 15. Several disputes exist between the parties concerning whether Tela has
sufficiently shown the Accused Products meet the limitations of the claim.
a. Diffusion Region
First, Respondents and Staff dispute that the Intel 14nm Products or the Intel 10nm
Products have a “diffusion region.” RIB at 22-39, 49; SIB at 46-52.
68
Tela contends “[i]n the Intel 14nm Products, each transistor in the region is formed in part
by a corresponding diffusion region, as evidenced by the diffusion region layout shapes that define
the location of source and drain regions of the NMOS and PMOS transistors.” CIB at 56 (citing
CX-1144C at Q/A 253-263, 284-288, 392-393, 951-988, 1731-1749; JX-0210C at *218, 225;
CPX-0096C at 3554-3555). Tela explains “Intel uses a process
to form the source
or drain of a transistor.” Id. at 57 (citing CX-1144C at Q/A 255, 258-259, 953, 1731-1734; RPX-
1997 at 307, 319; RPX-2021 at 1048, 1060; Hr’g Tr. at 450:25-452:19; Hr’g Tr. at 450:25-252:19,
649:2-652:12). Tela continues:
(CX-1144C (Foty) at Q/A74; see
also Tr. (Foty) at 446:6-17.)
Id. Tela claims this meets Order No. 34’s construction for “diffusion region” as “selected portions
of the substrate within which impurities have been introduced to form the source or drain of a
transistor” because “the source and drain regions are heavily doped semiconductor regions
occupy[ing] a portion of the area or region specified by a corresponding diffusion layout shape.”
Id. (citing, inter alia, CX-1144C at Q/A 267, 972-974, 1354-1362). Tela argues “the construction
is silent as to how impurities are introduced” and suggests is one such
technique. CRB at 20 (citing CX-1144C at Q/A 61; Hr’g Tr. at 489:8-490:11), 21 (Hr’g Tr. at
237:8-238:3, 649:2-650:3); RX-1664C at 138:15-25), 22 (citing CX-1144C at Q/A 61). Tela
69
asserts that “if the source and drain regions were separate from the substrate, charge carriers would
not be able to flow from the source and drain regions, rendering the transistor inoperable.” CRB
at 22 (citing CX-1144C at Q/A 69-74).
Tela observes that contemporaneous Intel documents “
’” (CIB at
58 (citing Hr’g Tr. at 652:6-12, 654:3-12), 62 (citing CX-1144C at Q/A 127, 257, 267; CXP-
0497C; CPX-0341C; Hr’g Tr. at 450:8-451:14); see CRB at 19) and “[a]s recently as 2017,
’” (CRB at 212 (citing JX-0329 at *1, 3; Hr’g Tr. at 669:2-670:9)). Tela also
argues that after the source and drain regions are
” CIB at 58 (citing Hr’g Tr. at 454:8-24), 63; CRB at 23 (citing Hr’g Tr. at
452:20-454:7; RPX-1997C at 308; RPX-2021C at 1048, 1063).
Should these sources and drains not be found to literally meet “diffusion
region,” Tela contends they meet it under the doctrine of equivalents. See CIB at 60-61; CRB at
24-27. Tela claims the differences between Intel’s regions and “diffusion
regions” are both insubstantial and substantially the same in function, way, and result. See CIB at
60-61 (citing CX-1144C at Q/A 875-988), 63-66; CRB at 24-27. And Tela contends the Intel
10nm Products are created by the same process, and thus infringe for the same reasons as the Intel
14nm Products. See CIB at 58-59.
In its reply brief, Tela appears to challenge the notion that “diffusion region” is limited to
the exact structures which make up the source and drain of a transistor:
Respondents suggest that Dr. Foty’s reliance on the n-diffusion and p-
diffusion layout shapes is irrelevant to the ALJ’s construction of “diffusion
70
region” because it “refers to the source or drain of the transistor, not to a
layout shape.” (RIB at 29.) Respondents appear to suggest that the ALJ’s
construction requires an exact correspondence between the area where the
impurities are introduced and the area where the source and drain are
formed. (See id. at 29-30.) There is no such requirement. The ALJ defined
“diffusion region” as the portion (i.e. region or area) of the substrate where
impurities are introduced and source or drain regions are formed as a result.
(Order No. 34 at 56.) Respondents acknowledge that
and sources and drains are formed within those areas. (RIB at 30;
JX-0329.0001, 3; see also Tr. (Auth) at 669:2-670:9).) This establishes that
the ALJ’s construction of “diffusion region” is met.
CRB at 20-21.
In opposition, Respondents argue that cannot meet the construction for
“diffusion region” given in Order No. 34: “selected portions of the substrate within which
impurities have been introduced to form the source or drain of a transistor.” Put simply,
Respondents contend the substrate in the Accused Products
RIB at 22, 26 (citing, inter alia, RX-0014C at Q/A 90-93, 100; RPX-1997C at
*316-319; RX-0008C at Q/A 83), 31 (citing Hr’g Tr. 249:7-18, 661:16-17), 49. Respondents
provide the following two diagrams showing this difference:
(RIB at 24 (citing RDX-0016C at *44; RX-0014C at Q/A 83-85; RX-0008C at Q/A 59-60));
71
(id. at 25 (citing RX-0008C at Q/A 62-70; RPX-1997C at *316; Hr’g Tr. at 235:19-236:2, 241:10-
242:18)). Respondents also provide the following teardown image showing the bulbous shape of
the epitaxially grown material:
RIB at 32 (citing RX-0008C at Q/A 75; PRX-2021C; Hr’g Tr. at 743:3-10).
Respondents claim “[f]orming sources/drains by
—was a critical innovation.” RIB at 26.
Respondents explain the innovation was needed to enable Intel’s three-dimensional FinFET source
72
and drain structures because: 1)
See generally RIB at 26-29 (citing, inter alia, RX-0008C at
Q/A 62, 73-79; Hr’g Tr. at 254:2-5). For these technical reasons, Respondents argue, the
sources and drains cannot be deemed equivalent to or interchangeable with
“diffusion regions,” either. See RIB at 33-39 (citing, inter alia, Hr’g Tr. at 236:12-238:19, 253:6-
255:21, 737:16-742:3, 1114:15-19; RX-0008C at Q/A 75-83; RX-0014C at Q/A 117-118;
Freedman Seating Co. v. Am. Seating Co., 420 F.3d 1350, 1361 (Fed. Cir. 2005); Minebea Co. v.
Think Outside, Inc., 159 F. App’x 197, 204 (Fed. Cir. 2006)). Respondents claim “diffusion
region” is a “‘meaningful structural and functional limitation of the claim,’ and the doctrine of
equivalents cannot be used to erase it” (RIB at 35 (citing Conopco, Inc. v. May Dep’t Stores Co.,
46 F.3d 1556, 1562 (Fed. Cir. 1994))) and point out the regions are subject to
their own issued patent (id. at 38 (citing RX-0167; RX-0014C at Q/A 122-123; Festo Corp. v.
Shoketsu Kinzoku Kogyo Kabushiki Co., 493 F.3d 1368, 1379-80 (Fed. Cir. 2007)). Respondents
also contend the “doctrine of ensnarement” precludes application of the doctrine of equivalents for
this limitation, claiming that since they raised it as a defense, the burden lies with Tela to “propose
a hypothetical claim and prove that this claim did not ensnare the prior art”—a burden they have
not and cannot meet with no expert testimony on the subject. Id. (citing G. David Jang, M.D. v.
Bos. Sci. Corp., 872 F.3d 1275, 1287 (Fed. Cir. 2017)).
As to Tela’s evidence, Respondents argue n-diffusion and p-diffusion layout shapes cannot
meet the limitation, as the ordered construction refers to the source and drain of a transistor, which
73
the shapes are not—as acknowledged by Dr. Foty. RIB at 29-30 (citing Hr’g Tr. at 227:20-228:21).
Additionally, Respondents explain
and “does not indicate the actual use of diffusion in the layout shape area, and certainly
not that diffusion is used to form the sources/drains.” Id. at 30 (citing RX-0008C at Q/A 89-91).
Respondents also dispute Dr. Foty’s opinion that any material electrically connected to the
substrate can be considered “substrate” (see id. at 30-31) and argue his opinion is largely
conclusory (see RRB at 38-39 (citing CX-1144C at Q/A 976)).
Finally, Respondents address Tela’s theory of
with the following:
Tela raises a new argument for the first time in its Post-Hearing Brief that
Intel somehow infringes because it uses
Tela’s
attempt to argue infringement based on this hypothetical unintentional by-
product is neither timely nor credible, and it underscores the weakness of
Tela’s original theories. As a preliminary matter, because Tela did not raise
this infringement theory until its Post- Hearing Brief, the theory has been
waived. G.R. 13.1
RRB at 22. If the argument is not deemed waived, Respondents argue the unrebutted testimony
in the record is that no diffusion takes place. See id. at 23-24 (citing RX-0008C at Q/A 98; Hr’g
Tr. at 970:13-971:2).
The Staff agrees with Respondents’ non-infringement positions, in both the literal and
equivalence contexts. See SIB at 46-52, 56-58; SRB at 15-17, 18-20. The Staff summarizes,
“[s]imply put, process does not introduce
impurities into the substrate to form sources or drains” (SIB at 50), and views a lack of
interchangeability as precluding a finding of equivalence (SRB at 19).
74
The limitation is not literally met. The ordered construction for “diffusion region” is
“selected portions of the substrate within which impurities have been introduced to form the source
or drain of a transistor.” Order No. 34 at 56. The parties’ proposals for this term all included the
phrase “portions of the substrate” or “defined in the base substrate.” See id. at 55. Within all
Accused Products, Tela has identified the source and drain structures, located
along the fins created by FinFET processes, as the “diffusion region[s].” See CIB at 57 (“The
diffusion regions in the Intel 14nm Products meet the ALJ’s construction of ‘diffusion region.’
The source and drain regions in the Intel 14nm Products are ‘selected portions
of the substrate within which impurities have been introduced to form the source or drain of a
transistor . . . .”); see CRB at 19.
The record is clear, however, that the structures cannot fairly be
considered “substrate.” The parties’ experts both describe how these structures are first created
by
Dr. Foty testified:
The source and drain regions in the Intel 14nm and 10nm processors are
formed
CX-1144C at Q/A 255; see CX-1144C at Q/A 259, 392-393; CPX-0197C at -974-1043. Dr.
Subramanian testified:
Starting back at Intel’s
75
RX-0014C at Q/A 79; see RX-0014C at Q/A 87-97; RPX-2062C; RPX-2064C; RPX-1997C at -
298-319; RPX-2021C at -11-60. The is not a modification of existing
material through the introduction of impurities, as required by the claim. Dr. Auth credibly
explained that the “substrate” is simply that wafer material which is received from the wafer
manufacturer:
Q. Are Intel’s sources and drains a portion of the
substrate?
A. No. Our
as opposed to modifying
the substrate.
Q. Why don’t you consider to be a
portion of the substrate?
A. The substrate is the wafer we receive from the wafer manufacturer. Our
RX-0008C at Q/A 81-82. This is a point on which Tela witness Mr. Gandhi agreed. RX-1662C
at 103:17-22. Dr. Foty also described the growth as “a different way of creating a source/drain
that’s electrically connected to the substrate” (Hr’g Tr. at 254:14-21 (emphasis added)) as opposed
to the previously discussed means of modifying the substrate itself (see generally id. at 235:19-
254:13).
Tela offers a number of arguments as to why the should
still be considered “substrate” but none are persuasive. For
76
example, Tela characterizes the ” (CIB at 57 (emphasis
added)), but the cited expert testimony from Dr. Foty (id. (citing CX-1144C at Q/A 67-72, 393,
423)) never describes it as such. Tela also claims that the
(CIB at
57; CRB at 23), but this is not supported beyond the say-so of its expert (see id. (citing CX-1144C
at Q/A 393, 423; Hr’g Tr. at 446:6-17); see CX-1144C at Q/A 425) and it is apparently disputed
by Dr. Auth (RX-0008C at Q/A 80 (discussing ”)). Moreover,
As stated by
Dr. Subramanian, “the claim construction requires introducing impurities into the substrate, not
into a material that ‘matches’ the substrate.” RX-0014C at Q/A 107.
Relatedly, Tela’s claim that must be present “because
without it, charge carriers could [not] flow between the source and drain regions of the transistor,
rendering it inoperable” (CIB at 57; see CRB at 22 (citing CX-1144C at Q/A 74) is beside the
point. Even assuming this assertion is true, at most it implies that source and
drain regions have not that they are part
of that substrate.
Moreover, that “Intel’s technical witness and contemporaneous documents describe the
portion of the substrate where impurities have been introduced using
(CIB at 58; see CRB at 21-22) is immaterial. The source and drain regions,
in actuality, are , regardless of Intel’s own
terminology.
Lastly, Tela’s additional argument concerning a “
77
(see, e.g., CIB at 58), is particularly revealing. The theory, if true, would avoid the substrate
problem discussed above, because the “pre-existing portions of the fin” are indisputably substrate.
But this contention was not disclosed in Tela’s pre-hearing brief and has been waived under
Ground Rule 13.1. Compare CPB at 14, 36 (all mentions of ) with Hr’g Tr. at 452:20–
454:24. Moreover, there is no evidence that any causes the relevant
region of the substrate to “form the source or drain of a transistor,” as required by claim 15. Order
No. 34 at 56.
Accordingly, the Accused Products have not been shown to literally infringe because they
literally lack the required “diffusion region(s).”
The limitation has been shown under the doctrine of equivalents, however. Admittedly,
Dr. Foty’s testimony on equivalence under an “insignificant differences” test is insufficient. It
largely consists of generalities about processes that would allegedly be understood as
insignificantly different, only to conclude with “[t]he source and drain regions in the Intel 14nm
processor are highly doped n-type or p-type regions, which is the same as the source and rain
regions in a transistor fabricated using a standard CMOS process in 2005.” CX-1144C at Q/A
976. The opinion does not address on any technical level why those differences which might, and
did, preclude literal infringement are insignificant. Accordingly, equivalence is not proven under
this approach.
With respect to function-way-result analysis, Dr. Foty’s discussion is more substantial and,
ultimately, persuasive. As determined above, the Accused Products do not literally infringe
because their sources and drains are formed through the introduction of impurities via
—and not into substrate as the limitation requires. See RX-0014C at
Q/A 107, 119; RX-0008C at Q/A 65-71, 98. Thus, the issue is whether these latter sources and
78
drains, once created, are substantially the same in function, way, and result, as the former sources
and drains.
Dr. Foty has persuasively explained how the functions of each type of source and drain are
the same—to provide charge carriers in a transistor circuit. CX-1144C at Q/A 976. Respondents’
expert, Dr. Subramanian, seems to acknowledge this shared function but then focuses on
differences which are not material to the analysis, particularly the use of the
sources and drains in three sided-fin applications as opposed to planar layouts. RX-0014C at Q/A
118. Respondents’ briefing similarly focuses too narrowly on attributes of Intel’s epitaxially
grown structures that enable certain levels of performance, and then describes them as the
“function.” See RIB at 36 (“[t]he function of Intel’s sources/drains is to act as
sources/drains specifically for FinFET transistors and to achieve strained silicon”).
Dr. Foty has also persuasively explained how the ways the functions are achieved are the
same: “by including a other
than and in addition to those of the semiconductor material,” which are referred to as dopants or
impurities. CX-1144C at Q/A 976. Respondents’ witnesses agree such impurities are introduced
during (albeit not introduced into the substrate). See RX-0014C at Q/A 107, 119;
RX-0008C at Q/A 65-71. The record further shows these impurities are responsible for charge
carrier creation by leaving electron “holes” in P-type semiconductors and providing extra electrons
in N-type semiconductors. See CX-1144C at Q/A 69; RX-0014C at Q/A 119. Thus, the way
involves different structures but is substantially the same.
Lastly, Dr. Foty has sufficiently explained substantially the same results from the functions,
and ways of accomplishing those functions, between sources and drains formed from introducing
impurities into an epitaxial growth and sources and drains formed from introducing impurities into
79
a substrate—namely, a functioning transistor. CX-1144C at Q/A 976. Respondents’ emphasis on
the
(see RIB at 37; RRB at 17-
18) are all well taken; they lead to enhanced performance of the sources and drains, are no doubt
necessary for smaller process nodes, and perhaps are entitled to separate protection under the
patent laws. 5 Respondents call these “critical differences” (RIB at 39), yet none actually
differentiate the function of the as it pertains to the claimed invention (i.e., to
serve as source or drain), the way in which that function is accomplished (i.e., electron vacancies
due to first type of impurity, electron surplus due to second), or the result (functioning transistor)
from the ordered construction of “diffusion region.” Accordingly, the function-way-result test is
satisfied.
Nor is doctrine of equivalents infringement precluded under ensnarement. True, “the
burden of persuasion is on the patentee to establish . . . that the asserted scope of equivalency
would not ensnare the prior art.” DePuy Spine, Inc. v. Medtronic Sofamor Danek, Inc., 567 F.3d
1314, 1323-24 (Fed. Cir. 2009); see Intendis GMBH v. Glenmark Pharms. Inc., USA, 822 F.3d
1355, 1363 (Fed. Cir. 2016). But Respondents have a burden of production to identify the prior
art they contend is ensnared, and with sufficient specificity to identify what is in dispute. See
Intendis, 822 F.3d at 1363 (“prior art introduced by the accused infringer [must be] assessed”).
Respondents’ only effort to meet this burden is a single sentence in their opening brief, where they
assert that the doctrine of equivalents “would improperly ensnare the prior art, including Intel’s
prior art 45 nm process node.” RIB at 38. This is too vague to trigger Tela’s burden. It is also
5 It appears the patent granted to Intel that Respondents’ reference (RIB at 38 (citing RX-
0167)) focuses on features other than the mere fact of epitaxial deposition (see RX-0014C at Q/A
122 (citing RDX-0016C at *58; RX-0167 at cl. 4)).
80
not clear that the Intel 45nm Products would even be ensnared because they lack other elements
of the claim such as gate structures orthogonal to first-metal structures. See, e.g., RX-0007C at
Q/A 426, 610. Moreover, generation of a hypothetical claim, which Respondents contend Tela
must do, is not the only method of demonstrating non-ensnarement. See RIB at 38; see G. David
Jang, 872 F.3d at 1285 n.4 (“hypothetical claim analysis is not the only method” to evaluate
ensnarement).
Accordingly, the “diffusion region” limitation is met in the Accused Products under the
doctrine of equivalents.
b. Substantially rectangular shape
Second, Respondents and Staff allege that, should the Intel 14nm Products or the Intel
10nm Products have “diffusion region[s],” those regions have not been shown to have “a
substantially rectangular shape.” RIB at 39-40, 49; SIB at 52-56. This claim element was not
previously construed. See Order No. 34 at 48-50.
Tela’s position is that “[t]he identified regions have a substantially rectangular shape from
a layout or top down view. This is evidenced by a top view illustration presented in Dr. Foty’s
demonstratives at CDX-0009C pages 127-131.” CIB at 58 (citing Hr’g Tr. at 454:8-24; CX-1144C
at Q/A 758-765, 1734), 59 (citing CX-1144C at Q/A 2578-2589; CDX-0011C at *72-74). Tela
disputes that the “rectangular” shape can be evaluated from a side-perspective or vertical cross-
section, as Respondents contend. CRB at 27-28 (citing Order No. 34 at 50). Tela also criticizes
the Staff for alleging that, from a top-perspective, the source and drain regions are not rectangular.
See id. at 28 (citing SIB at 54).
The limitation is not met. As defined in Order No. 34 and explained above, the “diffusion
regions” of the claim must be a location within a substance (i.e., the substrate) where the
introduction of impurities causes the creation of a source or drain of a transistor. Even assuming
81
the constitute the diffusion region, there is no evidence they are
substantially rectangular from a top-perspective. See, e.g., CDX-0012C at *8; CDX-0009C at
*126-131. And Dr. Foty conceded he did not provide any opinions on this issue. Hr’g Tr. at
357:12-359:12, 389:13-391:22. Accordingly, this element is not satisfied by the Accused
Products, and claim 15 overall has not been shown to be infringed by the Accused Products.
E. Domestic Industry – Technical Prong
According to Tela’s post-hearing briefing, the construction or use of the DI Products
practices claims 29 and 30 of the 334 patent. See CIB at 66. For the reasons discussed below, I
find Tela has not shown by a preponderance of the evidence that the DI Products practice the
claims.
1. Product Representativeness
As noted above, the DI Products consist of multiple processors from non-party SAS, made
with varying processes designated LPE, LPP, and LPC. Tela explains Samsung’s 14LPP and
14LPC processes are more recent variants of Samsung’s 14nm FinFET process based on
Samsung’s 14LPE process (CIB at 69 (citing CX-1144C at q/A 2619-2622, 2684-2690; JX-0209;
CX-0686C at *17)) and yet “[t]he differences between 14LPE, 14LPP, and 14LPC are not material
to the technical prong analysis; the relevant features such as
are consistent between the three” (id. at 66 (citing CX-1144C at Q/A 2627)). In support,
Tela references, inter alia, a 14LPP (id. (citing CX-0728C at *9)), 14LPC
design manuals (id. at 67-68 (citing CX-1144C at Q/A 2663-2674, 2685)), and 14LPP
advertisements which mention a “lower cost option, ‘without design rule changes or performance
sacrifice’” (id. at 68 (citing CX-1614 at *1)).
Thus, according to Tela, “Samsung’s 14nm FinFET process variants are representative of
one another and individually and collectively show that the Exynos Products practice the ’334
82
Patent claims 29 and 30.” CIB at 69. Tela also claims, more specifically, that the particular logic
circuit it located within the Exynos 7420 model, and relies on for technical prong domestic
industry, is a 2:1 multiplexer and so common that it “is almost certainly found in the other Exynos
Products. Id. at 69-70 (citing, inter alia, CX-1144C at Q/A 2691, 2953-2965, 3272-3278; Hr’g
Tr. at 668:9-669:1). Tela observes that a similar
and argues Respondents and Staff ignore this industry practice of
repeating transistor arrangements. See id. at 70 (citing CPX-0094C at -3546; CPX-0091C at -
3533); see also CRB at 29-30 (citing CX-1144C at Q/A 2614-2694). Importantly, Tela takes the
position that “Dr. Foty confirmed that the relevant features to his analysis of the Exynos 7420 (e.g.,
rectangular gate shape, rectangular contacts, gate pitch) are found in the design rules for the
subsequent Samsung 14LPP and 14LPC processes.” CRB at 29-30 (citing CX-1144C at Q/A
2653-2694).
In its reply brief, Tela views Respondents’ and Staff’s arguments on this issue as
strawmen—i.e., immaterial to the claims—akin to discussions of fin height and voltage types.
CRB at 30 (citing RX-1144C at 2626-2629); JX-0209 at *3), 33 (“Respondents identify design
rules allowing But this too has no effect on the
technical prong claim analysis.”). Tela argues, “[t]ellingly, Respondents and Staff never directly
refute Dr. Foty’s analysis as to representativeness. Instead, they merely observe that that the design
rules allow without explaining how those rules are material to
the technical prong analysis.” Id. at 32. In one example, Tela refers to a
for Samsung’s “14nm processes” and argues that larger pitches, as Respondents suggest is
possible, “would result in a larger, slower, more expensive chip that no longer qualified as
‘14nm.’” Id.
83
Respondents and the Staff challenge this representativeness. RIB at 49-59; SIB at 59-65.
Respondents specifically note that besides the Exynos 7420, “Tela did not perform reverse
engineering or obtain any technical discovery from Samsung on the Other DI Products, 6 and
therefore Tela has no evidence that they actually practice the claims.” RIB at 49; see id. at 56
(discussing Samsung manuals come from
As to the particular logic circuit in the Exynos 7420 Tela has selected and claims is likely
present in all other DI Products, Respondents view it as just “one specific configuration of 22
transistors in a chip with over a billion transistors” (id. at 50) and allege “Dr. Foty makes no attempt
to show that this transistor configuration is present in any of the Other DI Products” (id. (citing
RX-0014C at Q/A 439-4509)). Respondents contend Dr. Foty was misleading when he claimed
to rely on SEM images for products other than the Exynos 7420 to determine physical layouts as
“[t]here is no such reverse engineering of the Other DI Products in the record.” See id. at 57 (citing
CX-1144C at Q/A 2629; RX-0014C at Q/A 497). Respondents emphasize that showing the
particular 22-transistor configuration from the Exynos 7420 is present in the other DI Products is
critical to certain claim elements, as opposed to claim elements which may be shown through
design manuals; claim elements such as “29(g), 29(h), 30(h), and 30(i) of the ’334 patent and
elements 27(m) and 28(m) of the ’523 patent.” RRB at 27-28.
As to the manufacturing processes 14LPE, 14LPP, and 14LPC, Respondents claim there is
actually a fourth process, 14LPU, and within each, several different
with “significant impact” on arrangement of transistors and structure
dimensions. See RIB at 50 (citing RX-0014C at Q/A 428; JX-0209 at 3), 55. At a more basic
6 Respondents designate the S5E8890, S5E7880, S5E7570, S5E7870, and S5E7883 as the
“Other DI Products.” RIB at 49.
84
level, Respondents argue the 14LPP and 14LPC design manuals Tela relies on “are ‘a set of
parameters that specify certain geometric and connectivity restrictions’—they do not specify the
actual design of the chip or configuration of the structures, which is what Tela must prove to show
that the claims are practiced.” Id. at 51 (citing RX-0014C at Q/A 438). Respondents allege
“Samsung has explicitly stated that its 14LPE process used to manufacture the Exynos 7420 has a
different “transistor structure” than the 14LPP process used for two of the other chips, and
Samsung has distinguished the 14LPP and 14LPC processes used for the Other DI Products as an
improvement over the LPE process.” Id. at 52 (citing RX-0014C at Q/A 452-454; RX-0146 at *2;
RX-0148 at *2). Respondents also point to different
in the 14LPP and 14LPC processes than are found in the Exynos 7420. Id. at 53
(citing RX-0014C at Q/A 461-466, 470-478; CX-0727C at 135, 146; CX-0726C at 165).
In their reply brief, Respondents criticize Tela’s use of news articles to supplement the
details found in the design manuals themselves (see RRB at 28-29) and observe that one article
which Tela quotes is actually a comparison between LPP and LPC, and not between either with
LPE (see id. at 29 (citing CX-1614 at *1)). Respondents also argue that the evidence regarding
commonality of 2:1 multiplexers was based on “Mr. Becker’s non-objective testimony, with no
foundation, especially as to Samsung chips.” Id. at 30 (citing Hr’g Tr. at 121:18-122:4).
Respondents state flatly “[t]here is no evidence that the specific multiplexer identified in the
Exynos 7420 was used in any of the Other DI Products” and add “[a] logic function by itself does
not practice the claims—the logic circuit must be implemented into a semiconductor chip in a
particular way.” Id. at 30 (citing RX-0014C at Q/A 501-507).
The Staff echoes many of Respondents’ points including the facts that “Tela did not obtain
any technical discovery—no documents and no testimony—from Samsung or SAS. For example,
85
Samsung and SAS (and relevant third party Qualcomm) did not produce design layout files, mask
layout files, or source code for any of the alleged DI Products” (SIB at 59; see id. at 61 (citations
omitted)), and “Dr. Foty did not obtain or reverse-engineer any of the Other DI Products—
consistent with his failure to obtain or personally reverse-engineer any of Intel’s Accused
Products—to provide any direct evidence for those newer semiconductor chips” (id. at 61). The
Staff, relying on testimony from Dr. Subramanian, claims “[t]he evidence shows that these three
processes are materially different and were released at different times” and the designs are “quite
different” as between the Exynos 7420 and other DI Products. SIB at 63 (citing RX-0014C at Q/A
435); SRB at 21 (citing RX-0014C at Q/A 435, 448-509). Thus, the Staff takes the position that
Tela and its expert, Dr. Foty, were not able to conduct a proper “representativeness” analysis and
cannot meet their burden here. SIB at 61.
Tela has not met its burden of showing representativeness. Certain LED Lighting Devices,
LED Power Supplies, and Components Thereof, Inv. No. 337-TA-1081, Comm’n Op., at 10 (July
23, 2019) (holding the complainant “must show by a preponderance of the evidence that the
products its expert analyzed are indeed representative of unanalyzed products.”) (citing Certain
Semiconductor Devices, Semiconductor Device Packages, and Products Containing Same, Inv.
No. 337-TA-1010, Order No. 77 (March 15, 2017)). Its collected evidence is of mixed nature and
circumstantial at best. Tela obtained and analyzed an actual Exynos 7420 chip, but no
corresponding LPE design rule document; and obtained LPP and LPC design rule documents for
the remaining DI Products, but no chips. CX-1144C at Q/A 2683 7 ; RX-0014C at Q/A 437; RDX-
0016C at *176. Thus, Tela claims both: that the LPP and LPC design rule documents apply to the
7 Dr. Foty refers to an Exynos 7240 throughout his testimony, which I understand should be
7420.
86
Exynos 7420, and that the identified transistor cell within the Exynos 7420 applies to products
made under LPP and LPC processes. See CIB at 67 (“In particular, the analysis is based on a
teardown of the Exynos 7420, teardown reports for the Exynos 7420, and design rules for
Samsung’s 14LPP and 14LPC processes. The two sets of design rules are substantially similar
and the teardown analysis establishes that the relevant features of the Exynos 7420 conforms to
both sets of design rules.”).
Tela has not sufficiently shown the latter of the two claims, i.e., that the particular cell it
identifies and relies on within the Exynos 7420 (CX-1144C at Q/A 2701, 3122) exists within the
other five models of DI Products. This is critical because there are claim limitations which require
an arrangement of transistors that would come from the chip designer’s chosen layout and not
guaranteed to be present under the design rules. RRB at 27-28; see CRB at 30 (“The purpose of
design rules is to tell layout designers what they can and cannot do – if the layouts fail to comply
with these rules, they cannot be manufactured.”). Respondents refer to limitations 29(g), 29(h),
30(h), and 30(i) of the 334 patent, reproduced below:
[29g] wherein the region includes at least four transistors of the first
transistor type and at least four transistors of the second transistor type that
collectively form a portion of a multiplexer or a portion of a latch, wherein
at least one first-transistor-type-only gate structure within the region is
included within the portion of the multiplexer or the portion of the latch,
wherein at least one second-transistor-type-only gate structure within the
region is included within the portion of the multiplexer or the portion of the
latch,
[29h] wherein the at least four transistors of the first transistor type include
a first transistor of the first transistor type, wherein the at least four
transistors of the second transistor type include a first transistor of the
second transistor type, wherein a first gate structure forms both a gate
electrode of the first transistor of the first transistor type and a gate electrode
of the first transistor of the second transistor type.
(334 patent at cl. 29);
87
[30g] wherein each transistor within the region is formed in part by a
corresponding diffusion region, wherein each diffusion region that forms
part of any transistor within the region has a substantially rectangular shape,
[30h] wherein the region includes at least four transistors of the first
transistor type and at least four transistors of the second transistor type that
collectively form a portion of a multiplexer or a portion of a latch, wherein
at least one first-transistor-type-only gate structure within the region is
included within the portion of the multiplexer or the portion of the latch,
wherein at least one second-transistor-type-only gate structure within the
region is included within the portion of the multiplexer or the portion of the
latch[.]
(id. at cl. 30). Considering it is the patentee’s choice where to define the claimed “region” within
an accused product, many other limitations could be added to this list including, for example,
“wherein each gate gridline has at least one gate structure positioned thereon” and “a total number
of first-transistor-type-only gate structures within the region is equal to a total number of second-
transistor-type-only gate structures within the region.” 334 patent at cl. 29. It is entirely unclear
how these limitations, as just two examples and in addition to those identified by Respondents,
could be shown merely by design rules as opposed to an actual fabricated design. Indeed, Dr. Foty
does not rely on design documents to show them. See CX-1144C at Q/A 3133, 3215-3218.
Moreover, in a discussion of gate contact structures, Tela actually emphasizes, and thereby
acknowledges, that the content of the LPP and LPC design manuals is not the basis for practicing
the claim. Rather, the basis is the actual circuit arrangement found in the Exynos 7420 and imputed
to the other chips:
Similarly, Respondents identify design rules allowing
But this too has no effect on the technical prong
claim analysis. The multiplexer identified by Dr. Foty does not include
(See, e.g., CDX-0013.14)
Respondents’ identification of a potential non-practicing structure does not
undermine Dr. Foty’s identification and analysis of a representative logic
circuit in Exynos 7420.
CRB at 33.
88
Dr. Foty’s opinion that the particular transistor arrangement is present in the other DI
Products is therefore little more than speculation. He starts with a general observation that the
semiconductor industry relies on cell libraries and jumps to the conclusion that the particular
Exynos 7420 region is “almost certain[ly]” in any other 14nm Exynos processor:
Q. How, if it all, do the SEM image that you reviewed relate to other
Exynos processors?
A. Based on my review of the SEM images, it is my understanding that the
Samsung Exynos 7240 was laid out using cells from a cell library. In the
industry, it is typical to reuse verified cell libraries at a given process node
– once it has been shown that the cell (as specified in the layout) can be
successfully manufactured with the desired performance characteristics. As
such, the circuits in the SEM images that I analyzed for the Exynos 7240
are almost certain to also be found in other Exynos processors manufactured
using Samsung’s 14nm process.
CX-1144C at Q/A 2692. Tela implies additional testimony explains the connection beyond
assertions of industry practice (see CRB at 29 (citing CX-1144C at Q/A 221-222, 2614-2694), 20
(“Respondents characterize the multiplexer cell as a ‘22-transitor arrangement’ and allege that
there is no evidence it is found in the other Exynos Products. . . . These allegations, however, are
controverted by the evidence of standard industry practice.”), 32-33 (citing CX-1144C at Q/A
2627, 2679-94)). But the testimony does not provide such additional support.
This is not enough on its own to satisfy Tela’s burden, and even if it was, the record
contains contradicting evidence. For example, Tela’s identification of cells in the Accused
Products shows that even with industry use of cell libraries (and the thousands of repetitions of
cells within a certain model (see CIB at 70)), not all cells within a single process node are
necessarily covered by the 334 patent’s claims. For instance: the
cells for certain Intel 14nm Products (Broadwell, Sky Lake, Kaby Lake,
Coffee Lake); the cell for just one of the Intel 14nm Products (Cascade Lake);
the cells for another group of Intel 14nm
89
Products (Goldmont, Goldmont Plus); and, finally, the cell for a last group (Ice
Lake Chipset; Cannon Lake Chipset), as in the table below:
Intel 14nm Products
Product Family/Architecture Associated Cells
Broadwell;
Sky Lake;
Kaby Lake;
Coffee Lake
Cascade Lake
Goldmont;
Goldmont Plus
Ice Lake Chipset;
Cannon Lake Chipset
See CDX-0012C at *25-26; RDX-0016C at *37-39. Under Dr. Foty’s reasoning on the DI
Products, just one cell from this set of six could be representative of all the Intel 14nm Products.
Clearly, however, this would not have sufficed as evidence of infringement.
Furthermore, Dr. Foty’s opinion is generally not as well supported for this topic. At one
point in his testimony, he states he “completely disagree[s]” with Dr. Subramanian’s opinions on
the materiality of Samsung’s 14nm process variants because, in part, he “was able to observe the
physical layout of the devices through the SEM images, and confirm my understanding as to how
those features are placed in view of the design rules.” CX-1144C at Q/A 2629. Yet in another
portion he only mentions the Exynos 7420 as a physical product received and looked into:
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Q. Did you analyze any particular Samsung Exynos products as part of your
consideration of the technical prong of domestic industry requirement?
A. Yes, in forming my opinions regarding the technical prong of the
domestic industry requirement, I analyzed the Samsung Exynos [7420]
processor.
Q. What is the Samsung Exynos [7420] processor?
A. The Samsung Exynos [7420] processor is a processor fabricated using
Samsung’s LPE Process.
Q. How did you perform your analysis of the Samsung [7420] processor?
A. I analyzed teardown images of a Samsung Exynos processor, such as
SEM images, which is fabricated using Samsung’s LPE process. I also
considered documents regarding the Samsung Exynos products such as the
design rules we discussed earlier.
CX-1144C at Q/A 2680-2682. On this point, Respondents argue, and Tela does not dispute, that
“Tela identifies—and its expert relies on—such images only for the Exynos 7420. . . . There is no
such reverse engineering of the Other DI Products in the record.” RIB at 57 (citing RX-0014C at
Q/A 497).
As to other evidence, Tela’s briefing refers to testimony on the extreme commonality of
2:1 multiplexers (CIB at 69; CRB at 30), but Respondents are persuasive when they note “a logic
function by itself does not practice the claims—the logic circuit must be implemented into a
semiconductor chip in a particular way. Indeed, there are a number of well-known ‘circuits’ that
implement a 2:1 multiplexer, as well as a number of known implementations of a 2:1 multiplexer
into a semiconductor chip that do not practice the DI claims” (RRB at 30-31 (citing, inter alia,
RX-0014C at Q/A 500-507); see Hr’g Tr. at 1018:14-1019:21). Dr. Foty has not even attempted
to refute this point.
In sum, the actual transistor arrangement within a chip is critical to satisfaction of the
claims. Tela has no direct evidence showing the identified transistor arrangement of the Exynos
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7420 is present in the other DI Products, however, and the circumstantial evidence regarding
industry practices is particularly weak.
Accordingly, Tela has not shown the Exynos 7420 is representative of the other DI
Products (S5E7570, S5E7870, S5E7880, S5E7883, and S5E8890) such that practice of the claims
of the Asserted Patents by the Exynos 7420 suffices for all. Nevertheless, the following discussion
of particular claim limitations assumes all products are represented by the Exynos 7420.
2. Disputed Claims
Respondents contest Tela’s alleged practice of claims 29 and 30. See RIB at 59-62. The
Staff takes the same position. SIB at 65-67. Tela has not shown practice of either claim.
a. Claim 29
For reference, claim 29 of the 334 patent requires:
29. [29a] A semiconductor chip, comprising: gate structures formed within
a region of the semiconductor chip, the gate structures positioned in
accordance with a gate horizontal grid that includes at least seven gate
gridlines, wherein adjacent gate gridlines are separated from each other by
a gate pitch of less than or equal to about 193 nanometers, each gate
structure in the region having a substantially rectangular shape with a width
of less than or equal to about 45 nanometers and positioned to extend
lengthwise in a y-direction in a substantially centered manner along an
associated gate gridline, wherein each gate gridline has at least one gate
structure positioned thereon,
[29b] wherein each pair of gate structures that are positioned in an end-to-
end manner are separated by a line end-to-line end gap of less than or equal
to about 193 nanometers,
[29c] wherein at least one gate structure within the region is a first-
transistor-type-only gate structure that forms at least one gate electrode of
at least one transistor of a first transistor type and does not form a gate
electrode of a transistor of a second transistor type, wherein at least one gate
structure within the region is a second-transistor-type-only gate structure
that forms at least one gate electrode of at least one transistor of the second
transistor type and does not form a gate electrode of a transistor of the first
transistor type,
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[29d] wherein a total number of first-transistor-type-only gate structures
within the region is equal to a total number of second-transistor-type-only
gate structures within the region;
[29e] a number of contact structures formed within the region of the
semiconductor chip, wherein each gate structure that forms any transistor
gate electrode within the region has a respective top surface in physical and
electrical contact with a corresponding contact structure having a
substantially rectangular shape, wherein each contact structure that contacts
a given gate structure that forms any transistor gate electrode does not
contact another gate structure, wherein each contact structure having a
corresponding length greater than or equal to a corresponding width is
oriented to have its corresponding length extend in an x-direction, wherein
each contact structure that contacts a corresponding gate structure is
positioned to overlap at least one edge of the corresponding gate structure,
[29f] wherein each transistor within the region is formed in part by a
corresponding diffusion region, wherein each diffusion region that forms
part of any transistor within the region has a substantially rectangular shape,
[29g] wherein the region includes at least four transistors of the first
transistor type and at least four transistors of the second transistor type that
collectively form a portion of a multiplexer or a portion of a latch, wherein
at least one first-transistor-type-only gate structure within the region is
included within the portion of the multiplexer or the portion of the latch,
wherein at least one second-transistor-type-only gate structure within the
region is included within the portion of the multiplexer or the portion of the
latch,
[29h] wherein the at least four transistors of the first transistor type include
a first transistor of the first transistor type, wherein the at least four
transistors of the second transistor type include a first transistor of the
second transistor type, wherein a first gate structure forms both a gate
electrode of the first transistor of the first transistor type and a gate electrode
of the first transistor of the second transistor type.
334 patent at cl. 29 (annotated). Several disputes exist between the parties concerning whether
Tela has sufficiently shown the DI Products meet various limitations of the claim. These are
addressed below. In view of the testimony of Dr. Foty that the DI Products practice those
remaining limitations which are not in dispute, the DI Products have been shown to practice them
as alleged. See CX-1144C at Q/A 3127-3290; CIB at 70-73.
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i. Gate structures positioned in accordance with a gate
horizontal grid
First, Respondents and Staff dispute that “gate structures positioned in accordance with a
gate horizontal grid” is met in the DI Products. RIB at 62; SIB at 65-67.
For this limitation, Tela alleges:
[T]he Samsung 14LPP and 14LPC design manuals specify
(CX-1144C (Foty) at Q/A 2786-96, 2823-25;
CX-0727C.117, 120, 128, 132-33; CX-0726C.137, 156, 161-62.) Teardown
analysis of the Exynos 7420 further show that the Exynos Products meet
this claim limitation. (CX-1144C (Foty) at Q/A 3128-35; CDX-0013C.47-
50; see also JX-0215.9-14.)
CIB at 70-71. In particular, Tela alleges Samsung’s use of results
in the positioning of gate structures in accordance with a grid, and provides the following teardown
image in support:
94
CRB at 35 (citing JX-0215 at *9). Tela claims “[t]his positioning and orientation is also consistent
with the requirements of the 14LPP and 14[LPC] design rules.” Id. (citing CX-1144C at Q/A
2642, 2671-2672, 2786-2793; CX-0726C at *156, 159, 177; CX-0727C at *128, 130, 146).
In opposition, Respondents argue “Tela . . . offers no documents, testimony, or any other
evidence describing Samsung’s fabrication stage at all, let alone establish that any such gridlines
were used during fabrication.” RIB at 62 (citing RX-0014C at Q/A 625-636); RRB at 33. The
Staff argues similar points, claiming “Tela offers no evidence of any grid or gridlines, projected
or otherwise, used during Samsung’s fabrication process, and has failed to prove that this limitation
is met for that reason alone.” See SIB at 66; SRB at 23. The Staff asserts no equivalence has been
shown, let alone alleged, for this element either. See SIB at 66-67; SRB at 23.
The limitation is met, under the same reasoning as applied to the Accused Products.
Teardown images of the Exynos 7420 provided by Dr. Foty, reproduced above and below, show
an unmistakable linear and parallel arrangement of gate structures:
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CDX-0013 at *47 (citing CX-0723C). The most reasonable inference to draw is that these
structures were positioned in accordance with a pre-planned grid (i.e., not happenstance) during
fabrication—despite Respondents’ and the Staff’s complaints over a lack of documentary or
testimonial evidence. The proof is in the final product. Further, as discussed above in connection
with the Accused Products, no actual, observable, projection of a grid is required. Accordingly,
the DI Products practice this limitation.
ii. Diffusion regions
Second, Respondents and the Staff dispute that the DI Products have any “diffusion
region[s].” RIB at 60; SIB at 67-71.
For this limitation, Tela notes that the Exynos Products use FinFET technology, and
“design manuals, for example, show that the Exynos Products include an
diffusion regions.” CIB at 72 (citing CX-1144C at
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Q/A 2931-2936; CX-0727C at *38, 138, 141; CX-0726C at *46, 168, 171). In its reply brief, Tela
highlights 14LPC and 14LPP design rules which, again, refer to the as a
diffused or diffusion region:
(CRB at 33 (citing CX-0726C at *46; CX-0727C at *38));
(id. (citing CX-0726C at *104; CX-0727C at *85)). Tela reasons, “[a]s such, a POSITA would
understand that source/drain regions in Exynos Products are diffusion regions.”
Id.
As with the Accused Products, and therefore
not “substrate” as literally required by the construction of “diffusion region.” It does appear,
however, that Tela asserts source/drain regions are diffusion regions” for the DI
Products under the doctrine of equivalents. See CRB at 33 (citing CRB at 19-28). And also as
with the Accused Products, the evidence supports this assertion, so the DI products practice this
limitation.
iii. Substantially rectangular shape
Third, Respondents and Staff argue that, should the DI Products have “diffusion region[s],”
they have not been shown to possess “a substantially rectangular shape.” RIB at 60-62; SIB at 67-
71.
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For this limitation, Tela alleges the as shown and referred to in Exynos Product
design manuals, CIB at 72
(citing CX-1144C at Q/A 2931-2936; CX-0727C at *38, 138, 141; CX-0726C at *46, 168, 171;
CX-1144C at Q/A 3255-3258; CDX-0013C at *61; JX-0215 at *11, 13, 15, 19, 21). Tela presents
the following image from the 14LPP design rules to “show substantially rectangular diffusion
regions”:
CRB at 34 (citing CX-0726C at *170; CX-0727C at *38; CDX-0013 at *61). Tela continues:
(See Tr.
(Subramanian) 1012:3-1013:8; Tr. (Auth) at 660:18-25.)
Id. Dr. Foty’s testimony relies similarly on layout shapes showing that “the
are rectangular”:
98
CX-1144C at Q/A 2934 (citing CX-0272 at -00141).
The limitation is not met. There is a clear discrepancy between the
Dr. Foty analyzes for the “substantially rectangular” requirement (CX-1144C at Q/A 2934),
and the more specific sources and drains Tela asserts meet the “diffusion region”
limitation (CRB at 33). This is problematic because only the source and drain
structures can meet Order No. 34’s construction of “diffusion region,” as discussed above with
respect to the Accused Products, and so it is those structures which must be “substantially
rectangular” from a top-perspective.
As Respondents suggest (RIB at 61), the likely reason for this discrepancy is that
undisputed teardown imagery of the Exynos 7420 shows the epitaxially grown source and drain
structures do not have a substantially rectangular shape from a top-perspective, as shown in the
bottom image below:
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(RIB at 60 (citing RX-0014C at Q/A 579); see JX-0215 at *15);
(CX-0684 at *26 (excerpted); CIB at 61 (citing RX-0014C at Q/A 580)). Accordingly, this
limitation is not practiced by the DI Products.
b. Claim 30
For reference, claim 30 of the 334 patent requires:
30. [30a] A semiconductor chip, comprising: gate structures formed within
a region of the semiconductor chip, the gate structures positioned in
accordance with a gate horizontal grid that includes a number of gate
gridlines, wherein adjacent gate gridlines are separated from each other by
a gate pitch of less than or equal to about 193 nanometers, each gate
structure in the region having a substantially rectangular shape with a width
of less than or equal to about 45 nanometers and positioned to extend
lengthwise in a y-direction in a substantially centered manner along an
associated gate gridline, wherein each gate gridline has at least one gate
structure positioned thereon,
[30b] wherein each pair of gate structures that are positioned in an end-to-
end manner are separated by a line end-to-line end gap of less than or equal
to about 193 nanometers,
[30c] wherein at least one gate structure within the region is a first-
transistor-type-only gate structure that forms at least one gate electrode of
at least one transistor of a first transistor type and does not form a gate
electrode of a transistor of a second transistor type, wherein at least one gate
structure within the region is a second-transistor-type-only gate structure
that forms at least one gate electrode of at least one transistor of the second
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transistor type and does not form a gate electrode of a transistor of the first
transistor type,
[30d] wherein a total number of first-transistor-type-only gate structures
within the region is equal to a total number of second-transistor-type-only
gate structures within the region;
[30e] a number of contact structures formed within the region of the
semiconductor chip, wherein each of at least six gate structures within the
region has a respective top surface in physical and electrical contact with a
corresponding contact structure having a substantially rectangular shape,
wherein each contact structure is centered in an x-direction on the gate
structure with which it physical contacts,
[30f] wherein each contact structure that has the substantially rectangular
shape has a corresponding length greater than or equal to a corresponding
width and is oriented to have its corresponding length extend in an x-
direction, wherein each corresponding contact structure is in physical
contact with only one gate structure, wherein each corresponding contact
structure is positioned to overlap at least one edge of the gate structure
contacted by the corresponding contact structure,
[30g] wherein each transistor within the region is formed in part by a
corresponding diffusion region, wherein each diffusion region that forms
part of any transistor within the region has a substantially rectangular shape,
[30h] wherein the region includes at least four transistors of the first
transistor type and at least four transistors of the second transistor type that
collectively form a portion of a multiplexer or a portion of a latch, wherein
at least one first-transistor-type-only gate structure within the region is
included within the portion of the multiplexer or the portion of the latch,
wherein at least one second-transistor-type-only gate structure within the
region is included within the portion of the multiplexer or the portion of the
latch,
[30i] wherein both a gate electrode of a transistor of a first transistor type
and a gate electrode of a transistor of a second transistor type are formed by
a same gate structure within the region.
334 patent at cl. 30 (annotated). The parties largely treat claim 30 the same as claim 29, as both
claims require “diffusion regions” with “a substantially rectangular shape,” along with “gate
structures positioned in accordance with a gate horizontal grid.” See CIB at 73-74; RIB at 60-62;
SIB at 65-71. For all of the same reasons discussed with respect to claim 29, Respondents and the
101
Staff dispute that claim 30 is practiced by the DI Products. As determined above the DI Products
do not practice claim 29. Accordingly, the DI Products have not been shown to practice claim 30.
F. Validity and Other Defenses
Respondents and the Staff identify and discuss the following invalidity and
unenforceability theories for the 334 patent:
Claims Theory
1, 2, 5, 15, 29, 30 Lack of written description 35 U.S.C. § 112, ¶ 1
1, 2, 5, 15, 29, 30 Lack of enablement under 35 U.S.C. § 112, ¶ 1
1, 2, 5, 15, 29, 30 Anticipated under 35 U.S.C. § 102(a), (b) by Intel’s
14nm Products
1, 2, 5, 15, 29, 30 Rendered obvious under 35 U.S.C. § 103 by
Kitabayashi (JX-0267) and/or Intel 45nm Products
1, 2, 5, 15, 29, 30 Rendered obvious under 35 U.S.C. § 103 by Becker
(RX-0027)
1, 2, 5, 15, 29, 30 Rendered obvious under 35 U.S.C. § 103 by Becker
(RX-0027) and Greenway (JX-0286)
1, 2, 5, 15, 29, 30 Unenforceable due to covenant not to sue
See generally RIB at 62-121; SIB at 71-95. These theories are addressed in order below.
Before turning to their merits, however, a few preliminary points are warranted. Two of
the disputed claims, 29 and 30, are pertinent only to the technical prong of domestic industry. See
RIB at 74-75; SIB at 83-84. In general, however, it is “Commission practice not to couple an
analysis of domestic industry to a validity analysis.” Certain Soft-Edged Trampolines and
Components Thereof, Inv. No. 337-TA-908, Comm’n Op. at 53 (May 1, 2015). Indefiniteness is
the only basis for invalidity that bears on whether the technical prong is met, because indefiniteness
102
“ma[kes] it impossible for the complainant to demonstrate whether a patent claim [is] practiced.”
Certain Silicon Microphone Packages and Products Containing the Same, Inv. No. 337-TA-695,
Notice at 3 (Jan. 21, 2011). But indefiniteness is not one of the asserted grounds of invalidity of
these two claims. See RIB at 74-75; SIB at 83-84. Therefore, whether claims 29 and 30 of the
334 patent are invalid is not relevant, and the parties’ dispute over these claims need not be
resolved or otherwise addressed.
An additional threshold matter is the priority date of the 334 patent. In their motion for
summary determination, Respondents argued that new matter had been added to the application
resulting in the 334 patent, and that the 334 patent is consequently not entitled to the priority date
Tela asserts. See Order No. 27 at 2. This argument was rejected because of the existence of
genuine issues of material fact. Id. at 3. Respondents and the Staff now seemingly renew this
argument. See RIB at 65; SIB at 73-74; JX-0003 at *3. Tela does not dispute that the 334 patent’s
grandparent application, U.S. Patent Application No. 14/711,731 (the “731 Application”), filed
on May 13, 2015, contained a paragraph not found in any earlier filing in the chain of applications,
but it characterizes that paragraph as “not new matter, but a recitation of the as-filed claims.” CRB
at 37; see CIB at 79; see also RX-0019 at *24-26; 334 patent at 5:49-7:24.
In general, “claims to subject matter in a later-filed application not supported by an
ancestor application . . . do not receive the benefit of the earlier application’s filing date.” Reiffin
v. Microsoft Corp., 214 F.3d 1342, 1346 (Fed. Cir. 2000). “Support” in this context means
compliance with the first paragraph of 35 U.S.C. § 112. Id. (citing 35 U.S.C. § 120). One
requirement of Section 112 is an adequate written description, meaning that the patent’s disclosure
“conveys to those skilled in the art that the inventor had possession of the claimed subject matter
as of the filing date.” Ariad Pharm., Inc. v. Eli Lilly & Co., 598 F.3d 1336, 1351 (Fed. Cir. 2010)
103
(en banc) (citing 35 U.S.C. § 112). And one way that claimed subject matter may be conveyed,
particularly for purposes of evaluating whether a disclosure contains “new matter,” is if the subject
matter is “inherently contained in the original application,” that is, if it is “necessarily [] present
in the original application’s specification such that one skilled in the art would recognize the
disclosure.” Schering Corp. v. Amgen Inc., 222 F.3d 1347, 1352 (Fed. Cir. 2001) (citation and
internal quotation omitted); TurboCare Div. of Demag Delavai Turbomachinery Corp. v. General
Electric Co., 264 F.3d 1111, 1119 (Fed. Cir. 2001) (citing 35 U.S.C. § 120).
The subject matter at issue comprises two claim limitations recited in claim 1, from which
claims 2, 5, and 15 depend: “a gate pitch of less than or equal to about 193 nanometers” and “gate
structure[s] . . . with a width of less than or equal to about 45 nanometers.” 334 patent at 30:7-11.
The 334 patent specification (disregarding the new paragraph) addresses pitch and width
dimensions in several places: “minimum feature sizes are approaching 45nm” (id. at 4:7-8);
“current feature sizes are as small as 65 nm and are expected to soon approach sizes as small as
45nm” (id. at 9:4-6); “in a 90 nm process technology, i.e., minimum feature size equal to 90 nm,
the gridpoint pitch . . . is about [240 nm]” (id. at 14:67-15:2; see also id. at 17:35, 21:54); “grid
spacing is [360 nm]” (id. at 17:16; see also id. at 17:32) “gate electrode track pitch is [360 nm]”
and “metal 2 track pitch” is either 240 nm or 270 nm (id. at 23:3-10); “metal 2 pitch of 280 nm”
and “[w]ith the via lithography issues removed . . . about 220 nm” (id. at 26:45-49); and “at 90
nm the metal 4 pitch is 280 nm” (id. at 29:11-12). That is, the smallest pitch mentioned in the 334
patent specification is 220 nm, and although a feature size of 45nm is referenced, it is entirely
aspirational. And the 2006 Provisional Application contains even fewer references to width and
pitch (see generally RX-1365), with 240 nm being the smallest pitch mentioned (id. at 12).
104
This is inadequate, even applying a broad understanding of “inherency.” No person of
ordinary skill would understand that the inventors of the 334 patent possessed the claimed subject
matter—a width of 45 nanometers and a pitch of 193 nanometers, much less smaller dimensions—
as of March 9, 2006, or at any time prior to May 13, 2015. The 45 nanometer width limitation is
supported only by a “mere wish or hope,” and the 193 nanometer pitch limitation is supported by
literally nothing at all. Nuvo Pharm. (Ireland) Designated Activity Co. v. Dr. Reddy’s Labs. Inc.,
923 1368, 1381 (Fed. Cir. 2019).
Tela’s arguments against this conclusion are unavailing. Tela principally contends that
the “disclosure of scalability combined with the established knowledge of a POSITA is more than
sufficient to meet the written description requirement.” CRB at 36 (citing Streck, Inc. v. Research
& Diagnostics Sys., 665 F.3d 1269, 1285 (Fed. Cir. 2012)). Certainly the written description
requirement may be satisfied, in appropriate cases, by the combination of a patent’s disclosure
and the knowledge of a skilled artisan, as Streck holds. 665 F.3d at 1285 (“in some instances, a
patentee can rely on information that is ‘well-known in the art’ to satisfy written description”)
(citation omitted). But Dr. Hook, one of Tela’s experts, did not examine the 334 patent’s
prosecution history for the purpose of evaluating the priority date. Hr’g Tr. at 1135:8-1136:23,
1215:6-1216:20. And the patent flatly states that “current feature sizes are as small as 65 nm and
are expected to soon approach sizes as small as 45nm.” 334 patent at 9:4-6. This is essentially
an acknowledgment that the inventors did not consider feature sizes of 45 nanometers to be a part
of their invention as of March 9, 2006, regardless of the disclosure and the knowledge of a skilled
artisan.
Nor does the disclosure of “scalability,” combined with a skilled artisan’s capacity to
create feature sizes of 65 nanometers, contribute anything meaningful to the analysis. The 334
105
patent states that “circuit chip area” is reduced by “approximately 50% every two years,” and that
this is achieved by “reducing the feature sizes between 25% and 30%.” 334 patent at 3:60-64.
But the patent is directed to “managing lithographic gap issues as technology continues to progress
toward smaller semiconductor device feature[] sizes,” not to actually achieving such smaller
feature sizes. Id. at 4:31-33; see CIB at 76 (the patent is “directed to a layout methodology for
use as semiconductor sizes continue to scale down”). The specification describes a layout
methodology which would seemingly apply where gate widths are 45 nanometers and gate pitches
are 193 nanometers, but it does not “teach[] how to scale gate layouts” to achieve those smaller
widths and pitches, or otherwise provide any indication that the inventors even believed that such
sizes were part of their invention. CIB at 77. That the “scaling has proven true in the industry,”
resulting in 2019 widths and pitches even smaller than 45 and 193 nanometers, respectively, does
not mean that the inventors had possession of such small widths and pitches in 2006, or believed
that those widths and pitches were a part of the invention. CRB at 36. In fact, although some of
the listed prior art references use the term “scalable” or the like, the 334 patent itself does not even
use the term “scalability.” E.g., JX-0003 at *12 (listing, inter alia, Baldi, et al., “A Scalable Single
Poly EPROM Cell for Embedded Memory Applications”).
Although not explicitly raised by Tela, there is evidence of the inventors’ conception and
reduction to practice pertaining specifically to the 2006 Provisional Application, and it is similarly
unhelpful. CIB at 100-101. Specifically, for purposes of establishing the date of conception, Tela
argues that the 2006 Provisional Application “discloses . . . features smaller than 45nm or 193 nm,
as claimed.” Id. at 101. But the evidence Tela relies on for this argument does not, in fact, support
it. Dr. Hook’s opinion that gate widths and pitches of less than 45 and 193 nanometers are so
“disclose[d]” is based on Figure 1 of the 2006 Provisional Application, which shows an expected
106
“feature size” of less than 45 nanometers beginning only some time after about 2012, and does
not even reference gate pitch. Compare CX-1231C at Q/A 405 with RX-1365 at *15 (Figure 1 of
the 2006 Provisional Application). And Mr. Becker’s rebuttal testimony about feature sizes
seems to be based entirely on hindsight: although he testified that at the time the 2006 Provisional
Application was filed, “minimum feature sizes” were “less than or equal to about 45nm process
technology,” the application itself states only that minimum feature sizes were “approaching
45nm.” CX-1233C at Q/A 39; RX-1365 at *4.
Tela also cites witness testimony to the effect that as of March 2006, “others in the industry
had fabricated” devices with gate widths of 10 nanometers. CRB at 36-37; see also CIB at 76-77.
Admittedly, Dr. Hook testified that “10 nm FinFET structures” had been described “in the early
2000’s,” and this does not appear to be genuinely disputed by Respondents. CX-1231C at Q/A
1761. But one exhibit cited as evidence for 10 nanometer FinFET structures, U.S. Patent No.
6,413,802, does not disclose any particular dimension size, and although Dr. Subramanian, one of
its co-inventors, testified that it had “gate features in the tens of nanometer range,” it also had a
gate pitch of 75,000 nanometers, not 80-100 nanometers, as Tela claims (see CIB at 76 (citing JX-
0271); Hr’g Tr. at 1007:5-17; CRB at 39 (citing JX-0302 at *47, which describes gates fabricated
in 2011 with widths of 22 nm and pitches of 80-100 nm)). Also, Dr. Hook’s testimony is based
in part on CX-1315, a document not admitted in evidence. CX-1231C at Q/A 1761. That is, it
may have been possible in 2006 to fabricate an individual transistor with a 10 nanometer gate
width, but Tela cites no evidence that an entire chip could be fabricated with 10 nanometer widths
and pitches of 193 nanometers or smaller, or, more to the point, that the inventors of the 334 patent
viewed such dimensions as a part of their invention. See Hr’g Tr. at 1007:5-17 (Dr. Subramanian
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opined that a person of ordinary skill in 2006 would not have been able to make “a semiconductor
chip with FinFET transistors”).
Tela further cites testimony that the dimensions recited in the 334 patent refer to feature
sizes “available in commercial products at that time.” CRB at 36-37 (citing CX-1233C at Q/A 40
(Becker)); see also CIB at 76-77. The specification does not distinguish between what was known
at the cutting edge of chip technology and what was commercially available, however; the
disclosure merely states that feature sizes “are approaching 45nm”—demonstrating that a gate
width of 10nm was simply not contemplated by the inventors except as an objective that might be
reached years in the future, without regard to commercial viability. 334 patent at 4:8; see also
334 patent at 9:5-6. And Mr. Becker’s testimony about feature sizes in 2006 being “less than or
equal to about 45nm process technology” is inconsistent with the 334 patent itself, which (like the
2006 Provisional Application) only states that minimum feature sizes were “approaching 45nm.”
CX-1233C at Q/A 39; 334 patent at 4:8. In fact, even as of 2010 the International Technology
Roadmap for Semiconductors (“ITRS”) implied that 24 nanometer structures were expected to
have known “[m]anufacturable solutions” by 2012, but that 10 nanometer structures were not.
JX-0302 at *47; Hr’g Tr. at 1117:2-1119:24; see Hr’g Tr. at 1266:1-23 (products described in the
ITRS with no known manufacturable solutions are “in research or early development phase”).
Lastly, the Examiner’s views on priority date, although not binding in this investigation,
warrant mention. Notices of Allowability and of Allowance issued on April 12, 2018, and what
is now the 334 patent received an issue date of June 5, 2018 as U.S. Patent No. 9,991,283. See
RX-0019 at *7548-7552, 7579. On May 25, 2018, however, the applicants filed an Information
Disclosure Statement containing a complaint, filed 10 days earlier in the United States District
Court for the Northern District of California, in which Respondent Intel Corp. sued Complainant
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Tela for a declaratory judgment of invalidity and noninfringement of claims of other patents
assigned to Tela, including patents previously asserted in this investigation. See id. at *7583-
7610. In response, an Examiner Interview took place on May 31, 2018, in which the Examiner
“suggest[ed] removing [the 45 nanometer width and 193 nanometer pitch] limitations from the
specification” because they were “new matter.” Id. at *7630. “No agreement was reached,”
however, and on August 8, 2018, the Examiner issued a “Corrected Notice of Allowability” that
found every claim “not entitled to the benefit of the prior application,” on the basis that the claimed
width and pitch ranges had “no antecedent basis” in the prior-filed application. Id. at *7630-
*7636. The applicants then traversed the notice of allowability and filed a declaration from Dr.
Sunil P. Khatri, who opined that the ancestors of the 731 Application, including the 2006
Provisional Application, contained “written description support” for the width and pitch ranges at
issue, essentially on the same basis Tela advances here. Id. at *7645-7659. The 334 patent
eventually issued on November 27, 2018; although Tela argues from this that the Examiner
“apparently agreed with Dr. Khatri,” there is no documentary evidence of such agreement beyond
the mere fact of issuance. Id. at *7660; CIB at 79.
In sum, the evidence demonstrates clearly and convincingly that the 334 patent’s disclosure
does not convey to those skilled in the art, either explicitly or inherently, that the inventors had
possession of the entire subject matter of claim 1 as of March 9, 2006. So the claims at issue,
claims 1, 2, 5, and 15, are only entitled to a priority date of May 13, 2015, the date the new matter
was added to the 731 Application,
1. 35 U.S.C. § 112, ¶ 1 (Written Description)
Neither Respondents nor the Staff advance any substantive argument that the written
description requirement is not satisfied by the 334 patent, in view of the 2015 priority date. They
argue only that: (1) the “2015 amendment adding the Claimed Ranges in ipsis verbis” is
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inadequate; and (2) the 2015 priority date is unavailable because the 731 Application was a
continuation, not a continuation-in-part. RIB at 65-66, 65 n.8; see SIB at 74-75. Neither argument
is persuasive.
As to the first argument, the case law is clear that simply reciting the claim language in the
specification is not enough to meet the written description requirement; the specification must
“described the claimed invention” and not merely state the claimed limitations. Enzo Biochem,
Inc. v. Gen-Probe Inc., 323 F.3d 956, 968 (Fed. Cir. 2002). But that is not the situation here. The
new matter is a long, detailed paragraph describing the ranges in dispute, as well as the rest of the
invention of claim 1 and its dependent claims. See 334 patent at 5:49-7:24. This is sufficient to
satisfy the written description requirement.
As to the second argument, Respondents and the Staff rely on TurboCare to argue that
“new [matter] introduced during prosecution without a CIP application must find written support
in the originally-filed application or else it is invalid.” RIB at 65 (citing 264 F.3d at 1119)
(emphasis omitted); see SIB at 75. In TurboCare, the applicant amended his specification during
prosecution in response to an indefiniteness rejection, and further added new claim 2. See 264
F.3d at 1117. The United States Court of Appeals for the Federal Circuit affirmed a summary
judgment of invalidity, holding that one new element of claim 2 was new matter because the
“original disclosure was [not] sufficiently detailed” to enable a skilled artisan to recognize that the
applicant had invented that claim. Id. at 1118-19. But it also noted, citing in part 35 U.S.C. § 120,
that “[b]ecause [the applicant] did not file a continuation-in-part application, he cannot rely on any
alternative filing date for his newly added claim . . . [so] claim 2 is invalid for an inadequate written
description.”
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Respondents and the Staff place too much reliance on this statement. The applicant in
TurboCare filed an application, and then amended it by adding new matter, in contravention of 35
U.S.C. § 120. Had the applicant instead added the new matter by filing a continuation-in-part
application, or presumably an entirely new original application, Section 120 would not have been
violated, and the filing date of new claim 2 would have been the priority date. In other words, the
obverse of the Federal Circuit’s dicta in TurboCare amounts to “had the applicant added new
matter by filing a later application, he would have received a later priority date, and new claim 2
would have satisfied the written description requirement.” That is essentially what happened here:
the applicants filed a new application containing new matter, and because all the claims in suit
possess the gate width and pitch ranges at issue, the priority date for all claims is the filing date of
the new application, May 13, 2015. Admittedly, the applicants here filed a continuation
application rather than a continuation-in-part, but the consequence of that is simply a later priority
date rather than invalidation. See Reiffin, 214 F.3d at 1346 (“claims to subject matter in a later-
filed application not supported by an ancestor application” receive a later priority date). Inasmuch
as the other cases on which Respondents rely interpret TurboCare differently, those cases are not
binding on me, and their interpretations are not persuasive. See RIB at 65 n.8.
Therefore, claims 1, 2, 5, and 15 of the 334 patent satisfy the written description
requirement of Section 112.
2. 35 U.S.C. § 112, ¶ 1 (Enablement)
As with the written description requirement, Respondents renew the enablement argument
that was previously rejected in the context of summary determination. See CIB at 68; Order No.
27 at 2. The crux of Respondents’ argument is that, “at the effective filing date of the patent, one
of ordinary skill in the art could not practice the[] full scope” of the ranges of gate width and pitch
recited in claim 1 of the 334 patent “without undue experimentation.” RIB at 68 (citing Wyeth
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and Cordis Corp. v. Abbott Labs., 720 F.3d 1380, 1384 (Fed. Cir. 2013)). The Staff agrees. SIB
at 76.
There is “significant overlap” between the written description and enablement
requirements of 35 U.S.C. § 112. Univ. of Rochester v. G.D. Searle & Co., Inc., 358 F.3d 916,
(Fed. Cir. 2004). In one respect pertinent here, however, they are significantly different: the
written description requirement is satisfied no matter how far the gate width and pitch ranges
extend below 45 and 193 nanometers, respectively, but enablement cannot be properly analyzed
without ascertaining the “full scope” of the claimed ranges. AK Steel Corp. v. Sollac and Ugine,
344 F.3d 1234, 1241 (Fed. Cir. 2003) (“an enablement inquiry typically begins with a construction
of the claims”). This is because the written description supports width and pitch ranges with no
lower bounds, but the written description may not enable them. See RIB at 68 and n.11; see also
SIB at 82.
So claim 1 must be construed to establish those lower bounds. As noted with respect to
infringement, there is no genuine dispute that the two lines of Accused Products possess gate
widths and pitches of 28 nanometers and 70 nanometers (for the Intel 14nm Products) and 22
nanometers and 54 nanometers (for the Intel 10nm Products). See CX-1144C at Q/A 275-280.
Nor is there a genuine dispute that the Samsung Exynos products possess a gate width of no more
than about 36 nanometers, and a gate pitch of about 78 nanometers. See id. at Q/A 3133-35. The
parties’ only contentions on constructions of the claimed ranges are therefore in connection with
invalidity.
Unfortunately, those contentions are not entirely clear. Respondents state that “there is a
(yet unknown) physical limit to how small gate widths and pitches can ultimately be.” RRB at 37
n.5. And they appear to contend, in reliance on the testimony of Tela’s expert, Dr. Hook, that
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“single-digit nanometer gate widths” and 40 nanometer gate pitches are within the scope of the
claims, although they do not explicitly assert that anything smaller qualifies. RRB at 34, 37. The
Staff takes a similar position. SIB at 77. Tela, also citing the testimony of Dr. Hook, contends
that the lower bound is “the limit of standard CMOS processing,” which it further specifies as gate
widths of 10 nanometers and gate pitches of 40 nanometers. CRB at 39 (internal quotation
omitted).
The parties therefore appear to agree that the lower bound for gate pitch is 40 nanometers;
there does not appear to be any relevant intrinsic evidence, and this dimension is supported by the
knowledge of a skilled artisan, as established by Dr. Hook. The parties do not agree on the lower
bound for gate width, although they are not far apart, and Tela and Respondents seemingly agree
that Dr. Hook’s testimony is authoritative regarding the knowledge of a POSITA. Dr. Hook
testified that a “7 nanometer node” is within the scope of the claimed range of gate width, although
he admitted it is “beyond today’s manufacturing” abilities. Hr’g Tr. at 1120:20-1122:9. So the
claimed ranges are construed as a gate width from about 45 nanometers to 7 nanometers and a
gate pitch from about 193 nanometers to 40 nanometers.
Much of the briefing on enablement presupposes a priority date of 2006 rather than 2015.
Nonetheless, Respondents argue in the alternative that the full scope of the claims cannot be
practiced “even today without undue experimentation.” RIB at 68. That argument is meritorious,
as consideration of the factors enumerated in In re Wands, 858 F.2d 731, 737 (Fed. Cir. 1988),
shows:
The quantity of experimentation necessary and the relative skill of those in the art. These
factors are related. Dr. Hook does not dispute that it takes the full-time effort of at least 1,000
engineers, 95% of whom have doctorates, and “billions” of dollars in research and development
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expenses, to reduce the scale of integrated circuit chips by a single process node. Hr’g Tr. at
1105:12-1106:13. This would indeed seem to be “the very definition of ‘undue experimentation.’”
RRB at 39. Although such labors are “commonplace” and “business as usual” for the
semiconductor industry, as Dr. Hook testified, they are surely far from “routine” within the
meaning of Wands. See CIB at 78. And although the level of ordinary skill in the art is neither
especially high nor especially low, the level of skill needed to achieve a reduction in scale, as
opposed to simply practicing the invention, is clearly well beyond the capabilities of a POSITA.
The amount of direction or guidance presented. Even considering the new matter added
in 2015, Dr. Hook is correct that the 334 patent is “silent on the process” of resolving the various
technical hurdles to scaling down chip size. Hr’g Tr. at 1111:20-25. Tela’s position, that the
disclosure of a standard CMOS process is adequate, is unpersuasive. CRB at 40-41. Describing
CMOS as a “standard” and “well-known” process provides no guidance whatsoever to a skilled
artisan about how to shrink chip size. The specification essentially just presupposes that any
technical hurdles in reducing gate width and pitch will eventually be overcome; that is, it leaves
entirely to someone else the task of solving the problems preventing a skilled artisan from
practicing the full scope of the invention.
The presence or absence of working examples and the state of the prior art. As noted in
analyzing the written description requirement, all the working examples in the specification
pertain to sizes larger than or equal to the claimed range. E.g., 334 patent at 9:4-16. Even the
new matter added in 2015 provides only a single working example possessing the upper bounds
of the claimed ranges. See id. at 6:38-46. And the state of the prior art was such that no working
examples of the smallest width and pitch would have existed as of 2015; again, Dr. Hook admitted
at the hearing that the lower bound of the claimed gate width is “beyond today’s manufacturing”
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abilities. Hr’g Tr. at 1121:18-1122:9. So Dr. Subramanian’s testimony that in 2016, after the
priority date, the lowest width and pitch combination commercially available was 22 and 70
nanometers, more than one process node greater than the lower bound of the claimed ranges,
stands unrebutted. See RX-0007C at Q/A 157.
The nature of the invention. As noted, during prosecution the Examiner specifically
suggested removing the 45 and 193 nanometer limitations from the claims, but the applicants
declined to do so, and instead traversed their own notice of allowability. See RX-0019 at *7630-
7659. This indicates that the applicants considered the feature ranges to be sufficiently important
to the invention that they needed to remain in that application, and in the descendant applications,
including the one that issued as the 334 patent. On the other hand, it is not clear why the applicants
believed this; Respondents suggest that it was because the applicants wished to avoid prior art,
but point to no evidence explicitly supporting such an inference. See RIB at 64. Moreover, the
“heart of the invention” appears to be the combination of various chip layers possessing rectilinear
features, and not the actual sizes of those features. E.g., 334 patent at 4:30-33 (“a solution is
needed for managing lithographic gap issues as technology continues to progress toward smaller
semiconductor device feature sizes”), 10:6-7 (the problem “stem[s] from variability introduced by
design-dependent unconstrained feature topologies”); Certain Multi-Stage Fuel Vapor Canisters
and Activated Carbon Components Thereof, Inv. No. 337-TA-1140, Final Initial Determination
at 168 (Jan. 28, 2020) (not reviewed in relevant part). So on balance, this factor weighs slightly
against a finding of undue experimentation.
The predictability or unpredictability of the art. This factor also weighs against a finding
of undue experimentation. Dr. Hook explained it succinctly: “you can do a pretty good job of
predicting that a bunch of engineers will arrive at a solution if you give them enough time and
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enough money.” Hr’g Tr. at 1125:18-1126:11. In fact, semiconductor design and fabrication is
so predictable an art that it has historically followed “Moore’s Law”—integrated circuits have
halved in area on average once every two years. See 334 patent at 3:59-61; CX-1231C at Q/A
1699.
The breadth of the claims. As of 2015 integrated circuits with gate widths and pitches well
below 45 and 193 nanometers, respectively, had been fabricated. E.g., JX-0302 at *47 (describing
a chip made in 2011 with 22 nm gate width and 80-100 nm gate pitch). But the claims are not
limited to what could be made and used in 2015; they include ranges with lower bounds beyond
what can be made and used even today. Hr’g Tr. at 1121:18-1122:9. Had the claimed ranges
been drafted with the knowledge of a skilled artisan in mind, the breadth of the ranges would
likely have been uncontroversial. But that is not the situation presented here, and the breadth of
the claims weighs against finding enablement.
In sum, the Wands factors are mixed. That the relevant art is predictable weighs against a
finding of undue experimentation, but, importantly, that predictability is achieved by tremendous
research and development efforts. And the nature of the invention also weighs against undue
experimentation, albeit only slightly. Otherwise, the Wands factors weigh in favor of finding that
undue experimentation would be needed to practice the full scope of the claims, down to the lower
bounds of the claimed ranges of gate width and pitch. Particularly significant is Dr. Hook’s
admission at the hearing that the lower bounds are both within the scope of the claims and not
manufacturable. See Hr’g Tr. at 1121:18-1122:9. So the “breadth of enablement in the patent
specification[] is not commensurate in scope with the claims.” Enzo-Biochem, Inc. v. Calgene,
Inc., 188 F.3d 1362, 1377 (Fed. Cir. 1999).
Therefore, claims 1, 2, 5, and 15 of the 334 patent are invalid for lack of enablement.
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3. Intel 14nm Products
Respondents contend that the asserted claims of the 334 patent are anticipated, but only by
the Intel 14nm Products. RIB at 75-76. As a threshold issue and more specifically, Respondents
contend that the “Broadwell” 14nm product is prior art to the 334 patent under 35 U.S.C. § 102(a)
and (b), assuming that patent’s priority date is May 13, 2015. Id. Tela presents no argument on
this point beyond its assertion that the 334 patent’s priority date is instead 2006. CRB at 42.
Intel publicly demonstrated the operation of the Broadwell chip, an Intel 14nm Product,
on September 10, 2013, at an Intel Developer Forum. See RX-0174 at *5-6. Based on the
transcript (RX-0174) and video (RX-0176) of that forum, Dr. Subramanian opines that the Intel
14nm Products were publicly disclosed no later than the date of the forum, in 2013. See RX-
0007C at Q/A 941. This qualifies as public use more than one year before the application date
under the pre-AIA version of 35 U.S.C. § 102(b). See Honeywell Int’l, Inc. v. Universal Avionics
Systems Corp., 488 F.3d 982, 998 (Fed. Cir. 2007) (“A barring public use requires a public use
more than one year before the patent filing date that employs a completed invention in public,
without confidentiality restrictions, and without permitted experimentation.”) (citing 35 U.S.C. §
102(b) (2002)); see also 35 U.S.C. § 102(a)(1) (2015) (post-AIA version of Section 102: “the
claimed invention was . . . in public use” more than one year “before the effective filing date”).
Therefore, the Broadwell 14nm Product is prior art to the 334 patent. As determined above,
the Broadwell 14nm Product infringes claims 1, 2, and 5, but not claim 15, of the 334 patent. Thus,
under the principle that an infringing product, if earlier, anticipates (see Upsher-Smith Labs., 412 ,
F.3d at 1322), claims 1, 2, and 5 of the 334 patent are invalid as anticipated, and claim 15 is not.
4. Kitabayashi in combination with Intel 45nm Products
Respondents contend it would have been obvious to a POSITA to combine the teachings
of a U.S. patent prior art reference, Kitabayashi, with certain 45nm processor products from
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respondent Intel, in such a way that meets all limitations of the asserted claims. See RIB at 77-
112.
Kitabayashi, U.S. Patent No. 7,200,831, issued on April 3, 2007, and is unquestionably
prior art. See 35 U.S.C. § 102(a) (2015) (“the claimed invention was patented” more than one year
“before the effective filing date of the claimed invention”). It is also prior art under the pre-AIA
version of 35 U.S.C. § 102(e), as Respondents allege; the 334 patent’s invention date is the filing
date, May 13, 2015, because of the new matter added at that time, and Kitabayashi was therefore
“granted on an application for patent by another filed in the United States before the invention by
the applicant for patent.” 35 U.S.C. § 102(e) (2002). Tela does not dispute that Kitabayashi is
prior art. See CIB at 80.
Whether the Intel 45nm Products qualify as prior art is disputed, however. Respondents
contend, presumably on the assumption that the 334 patent is entitled to a 2006 priority date, only
that the Intel 45nm Products are prior art under the pre-AIA version of 35 U.S.C. § 102(g). RIB
at 77-78. Under that provision, a patent is invalid if “before [the patentee]’s invention thereof, the
invention was made in this country by another inventor who had not abandoned, suppressed, or
concealed it.” 35 U.S.C. § 102(g)(2) (2002). The Intel 45nm Products were on sale in the U.S.
no later than November 12, 2007, under the commercial name “Penryn,” so Respondents have
made out a prima facie case that they were “made” and “not abandoned, suppressed, or concealed”
before the 334 patent’s 2015 priority date. See RX-0007C at Q/A 224-25 (citing JX-0274 and JX-
0276). Tela does not dispute that the Penryn chip was on sale in the U.S. by November 2007.
CIB at 81.
Tela instead contends—also presumably on the assumption that the 334 patent has a 2006
priority date—that the Penryn chips were based on a “45nm test chip” that was not commercialized
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and remains confidential to this day, and which therefore was abandoned, suppressed, or
concealed. CIB at 81-82. So most of Tela’s Section 102(g) arguments are irrelevant because they
are directed exclusively to the test chip rather than to the Penryn chip. See generally id. at 81-88.
But Tela does advance three arguments that seemingly apply separately to the Penryn chip:
(1) because the technical details of the Penryn chip have never been adequately publicized, that
chip was abandoned, suppressed, or concealed (see CIB at 82-83); (2) Intel was not diligent in
reducing the Penryn chip to practice (see CRB at 45-47); and (3) the Penryn chip was not “made
in this country by another inventor” (see CIB at 86-87). The first two arguments are foreclosed
by Fox Group, Inc. v. Cree, Inc., 700 F.3d 1300 (Fed. Cir. 2012). In that case, the United States
Court of Appeals for the Federal Circuit held that “commercialization” of a good embodying a
product claim is a “way to prove public disclosure,” even when that commercialization by itself
is non-enabling, thus negating any claim of abandonment, suppression, or concealment. 700 F.3d
at 1306-07. That is precisely what Intel did here, and Tela’s arguments that Fox Group is
inapposite, or that its dissenting opinion should be followed, are unpersuasive. See CRB at 51-
52; CIB at 144 n.12. The Federal Circuit also held that an accused infringer may demonstrate
invalidity under Section 102(g) by proving it “reduced its invention to practice first,” without
regard to diligence. Id. at 1304. That, too, is precisely what Intel did here, so proof of diligence
is not required. See id.; RX-0007C at Q/A 247 (Dr. Subramanian opining that Intel performed a
reduction to practice).
The third argument is foreclosed by Solvay S.A. v. Honeywell Int’l Inc., 742 F.3d 998 (Fed.
Cir. 2014). In that case, involving method claims, Russian engineers “first conceived the
invention and reduced it to practice in Russia.” 742 F.3d at 1002. Honeywell, the accused
infringer, then “replicated the Russian process by following the information provided by [the
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Russian engineers], thereby practicing the invention in the United States.” Id. at 1007. The
Federal Circuit held that such a later reduction to practice in the United States qualifies as
“mak[ing]” the invention “in this country by another inventor,” even though the Russian engineers
were not the ones who performed the domestic reduction to practice. Id. And, again, Intel
performed a reduction to practice, and did so domestically. See JX-0275 at 5 (the 45nm chip “is
being developed by [Intel’s] Logic Technology Development group located in Hillsboro,
Oregon”); JX-0278 at *2; RX-0007C at Q/A 247. That Intel has never identified the Penryn chip’s
inventors by name is irrelevant, because there is no evidence, or even argument, that the inventors
of the 334 patent made the Penryn chip. See CRB at 44 (asserting that the persons who conceived
of the test chip are unidentified); CIB at 82.
Therefore, the Intel 45nm Products, and more precisely the Penryn chip, are prior art to the
334 patent.
As to the merits of the obviousness theory, Kitabayashi discloses “semiconductor
integrated circuit wiring” having a “multilayer structure.” JX-0267 at 1:15-16, 2:37. Each
successive wiring layer consists of straight-line wiring that is “orthogonal” or “inclined” relative
to the previous layer, so that “the wiring traces constitute a grid,” and each successive wiring layer
is “connected through vias.” Id. at 5:2, 5:56-58, Figs. 1-9. The lowest wiring layer is “connected
to . . . the transistors (circuit elements).” Id. at 5:2-3.
The Intel 45nm Products, including the Penryn chip, are described in various documents
summarized by Dr. Subramanian. See generally RX-0007C at Q/A 213-336. Dr. Subramanian
also provides an element-by-element claim comparison. See generally id. at Q/A 370-462. The
Intel 45nm Products comprise gate structures on a semiconductor chip, positioned relative to
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diffusion regions to form transistor gates. See id. at Q/A 379; RDX-0009C at *108. Above that
are metal layers that do not use a “gridded layout.” Id. at Q/A 327; see RDX-0009C at *96.
Respondents’ basic contention is that “it would have been obvious to combine
Kitabayashi’s gridded metal structure with Intel’s unidirectional gate structures . . . [and] to set
the lowest-lying metal layer of Kitabayashi to run orthogonal to the gate direction.” RRB at 57.
But Claim 1 also requires “at least five” substantially rectangular first-metal structures positioned
on “at least eight first-metal gridlines,” with “adjacent” first-metal structures spaced “less than or
equal to 193 nanometers” apart. 334 patent at 30:42-50, 31:3-5. Kitabayashi teaches no particular
spacing, and the Intel 45nm Products have neither first-metal gridlines nor consistent spacing,
because they are not substantially rectangular. See RX-0007C at Q/A 420-23, 433-34. Dr.
Subramanian’s testimony that the Intel 45nm Products have “metal interconnect layers” with a
fixed pitch, that a skilled artisan would know to set at 160 nanometers, makes no sense; the
conducting structures in those layers are two-dimensional, and therefore either have no pitch at all
or two pitches which appear to be different. Id. at Q/A 434; RDX-0009C at *129. And although
a 1992 textbook by Maziasz and Hayes, also referenced by Dr. Subramanian, discloses six
rectangular first-metal structures, it does not disclose eight gridlines. See RX-0028 at 15, Fig.
1.10; RX-0007C at Q/A 324-325. Therefore, even though a combination of the gate arrangement
of the Intel 45nm Products and the gridded metal layers of Kitabayashi comes close to an
embodiment of claim 1 of the 334 patent, Tela is correct that there is an element missing from that
combination, and from the various additional references on which Respondents rely. See CRB at
59-60.
Additionally, Tela argues that the combination of seven gate gridlines and eight first-metal
gridlines, perpendicular to each other, is not found in the prior art. See CIB at 90; CRB at 57.
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This requirement is found in the references to “y-direction” and “x-direction” in the claim
limitations “each gate structure in the region having a substantially rectangular shape with a width
of less than or equal to about 45 nanometers and positioned to extend lengthwise in a y-direction
in a substantially centered manner along an associated gate gridline” and “each first-metal
structure in the region having a substantially rectangular shape and positioned to extend
lengthwise in an x-direction in a substantially centered manner on an associated first-metal
gridline.” 334 patent at cl. 1.
Kitabayashi may provide an express motivation to combine the “semiconductor integrated
circuit wiring” structures it discloses with “transistors,” i.e., the combination of structures forming
the transistors in the Intel 45nm Products. JX-0267 at 5:2-3; CIB at 90 (citing RX-0007C at Q/A
335, 338); RIB at 86-87. But Kitabayashi is silent as to what the transistors look like, how they
are oriented, and how many there must be. See generally JX-0267. Dr. Subramanian does not
persuasively provide these elements, either. He identifies a region in the Intel 45nm Products, not
asserted for purposes of invalidity, which happens to have metal structures more closely
resembling rectangles and extending perpendicular to the gate structures. RX-0007C at Q/A 322;
RDX-0009C at *96. But in the region of the Intel 45nm Products which is asserted for purposes
of invalidity, the first-metal structures largely extend perpendicular to the gate structures and do
not resemble rectangles at all. See RDX-0009C at *125, 129, 131, 132, 135, 139; RX-0007C at
Q/A 415-446. This is shown below with gate structures in dark green, running vertically, and
first-metal structures in light blue, also running largely vertically:
122
RDX-0009C at *125;
id. at *135.
Dr. Subramanian’s testimony that it was known in 2006 that “metal 1” structures “could”
run perpendicular to gate structures is not evidence of motivation either. RX-0007C at Q/A 323-
123
325; see PersonalWeb Techs., LLC v. Apple, Inc., 848 F.3d 987, 993-4 (Fed. Cir. 2017) (“[T]hat
reasoning seems to say no more than that a skilled artisan, once presented with the two references,
would have understood that they could be combined. And that is not enough: it does not imply a
motivation to pick out those two references and combine them to arrive at the claimed invention.”).
Indeed, his critical testimony on this point is mostly legalese: “[i]n my opinion, based on the
disclosures in both Intel’s 45nm products themselves as well as in well-known textbooks, that
running metal 1 perpendicular to the gate direction (or OGD) was a known design choice at the
time of the alleged invention, and at a minimum, would have been one of a few known solutions
that would yield predictable results and would not require undue experimentation.” Id. at Q/A
325. This opinion is too conclusory to place much weight on it.
Dr. Auth testified that Intel “considered” linear first-metal structures orthogonal to the gate
structures for the Intel 45nm Products because, among other things, “it made sense to route it OGD
so that metal 1 structures could make contact with the gates as well as the sources and drains
without having to rely on a local interconnect.” RX-0001C at Q/A 82. But this testimony is also
entitled to little weight, for two reasons. First, it describes what Intel apparently “knew,” and not
what a person of ordinary skill would have appreciated at the time. Second, it is provided in a
somewhat contradictory context. Dr. Auth’s immediate next statement is “[f]or these reasons, at
the 45nm process node size, we made the decision to require poly to be unidirectional, as I
explained previously.” Id. But both the metal layer and the “poly” gate layer must be
unidirectional, as well as orthogonal to each other, and as shown in Dr. Subramanian’s evidence
(see, e.g., RDX-0009C at *125, 129, 131, 132, 135, 139), unidirectional metal 1 structures were
definitely not chosen for the Intel 45nm Products. Thus, whatever would have “made sense” (i.e.,
124
would have been obvious) with unidirectional first-metal structures, Intel went in a different
direction.
So Respondents have not clearly and convincingly shown why, even once Kitabayashi and
the Intel 45nm Products are combined, a person of ordinary skill would place the lowest, first-
metal, layer of Kitabayashi perpendicular or orthogonal to the gate structures in the Intel 45nm
Products. In other words, Respondents have not shown “all the elements of [claim 1] are found
in a combination of prior art references.” Velander v. Garner, 348 F.3d 1359, 1363 (Fed. Cir.
2003). And, necessarily, they also have not shown “an apparent reason to combine” existing
elements with a nonexistent element. KSR Int’l Co. v. Teleflex Inc., 550 U.S. 398, 418 (2007).
That is, the combination of Kitabayashi and the Intel 45nm Products, in view of “(1) the scope
and content of the prior art, (2) the level of ordinary skill in the art, [and] (3) the differences
between the claimed invention and the prior art,” does not make out a prima facie case of
obviousness of claim 1. Scanner Techs. Corp. v. ICOS Vision Sys. Corp. N.V., 528 F.3d 1365,
1379 (Fed. Cir. 2008).
5. Becker, and Becker in combination with Greenway
Respondents allege that Becker, U.S. Pub. No. US 2007/0210391, which was published on
September 13, 2007, renders the claims of the 334 patent obvious under a single-reference theory.
See RIB at 112-113. Respondents are correct that Becker is prior art under the pre-AIA version of
35 U.S.C. § 102(b), because it is a printed publication predating the 334 patent’s priority date of
May 13, 2015. See id. As with the Intel 14nm Products, Tela advances no argument that Becker
is not prior art, beyond its erroneous contention that the 334 patent is entitled to a 2006 priority
date. See CIB at 92-93; CRB at 62-63.
Respondents also offer an obviousness theory based in a combination of Becker and a
printed publication referred to as Greenway, entitled “32nm 1-D Regular Pitch SRAM Bitcell
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Design for Interference-Assisted Lithography.” RX-0007C at Q/A 94. Greenway predates the
334 patent’s priority date of May 13, 2015, and therefore qualifies as prior art under the pre-AIA
version of 35 U.S.C. § 102(b). JX-0286. Tela does not expressly dispute this, although Greenway
was published after 2006. See CIB at 93; CRB at 62-63.
As to the merits of the obviousness theory, Becker contains a disclosure similar to that of
the 731 application and the 334 patent, but, notably, without the additional paragraph constituting
new matter. Compare RX-0027 at *22 with 334 patent at 5:49-7:24. Respondents concede that
“Becker does not expressly disclose gate widths . . . and gate pitches and other spacing” having
the ranges recited in claim 1. RIB at 112-13. Therefore, Becker by itself does not make out a
prima facie case of obviousness. Nor does the fact that by 2015 “feature sizes and spacings that
fall within” the claimed ranges would have been known to a skilled artisan change this conclusion,
because the full extent of the claimed ranges were not known to a skilled artisan at that time, and
are still not manufacturable today. Id.
As for the combination of Becker and Greenway, Tela’s (erroneous) response is that
Becker is not prior art. See CIB at 93; CRB at 62-63. Greenway does disclose certain elements
of claim 1 that are not disclosed in Becker, as Dr. Subramanian explains. See RX-0007C at Q/A
939. However, as with the combination of Kitabayashi and the Intel 45nm Products, there is an
element missing from the combination of Becker and Greenway.
Claim 1 requires a layer of “at least seven gate gridlines,” each containing at least one
“substantially rectangular” gate structure, that is, a gate layer of at least seven substantially
rectangular structures, each of which “compris[e] a transistor gate.” 334 patent 30:5-14; Order
No. 34 at 55. This element is not found in either Becker or Greenway; Becker discloses at most
six gate structures, and Greenway apparently discloses only four. See JX-0267 at 5:2-3; RX-0027
126
at Fig. 5. By contrast, the new matter added to the 731 Application describes “at least ten
conductive structures,” where “[s]ome of the at least ten conductive structures form at least one
transistor gate electrode.” 334 patent at 5:53-56. Dr. Subramanian implicitly concedes that seven
gate structures are absent from Becker and Greenway when he opines that “[a]dding more
gridlines and gate structures . . . would be mere duplication.” RX-0007C at Q/A 845.
Admittedly, this element is found in a prior art reference, namely, one of the designs for
the Penryn chip. See RX-0007C at Q/A 375 (citing RDX-0009C at *107C (showing at least eleven
gridlines on which gate structures are disposed)). But Respondents do not cite this reference in
combination with Becker and Greenway, and a skilled artisan’s knowledge that “mere duplication”
might work is not a substitute for actually identifying a prior art element. So, again, Respondents
have not shown “all the elements of [claim 1] are found in a combination of prior art references,”
and the combination of Becker and Greenway, in view of “(1) the scope and content of the prior
art, (2) the level of ordinary skill in the art, [and] (3) the differences between the claimed invention
and the prior art,” does not make out a prima facie case of obviousness of claim 1. Velander, 348
F.3d at 1363; Scanner Techs., 528 F.3d at 1379.
6. Secondary Considerations
The secondary considerations of non-obviousness are equivocal at best. Tela offers
essentially no evidence of skepticism by others and commercial success. See CIB at 95-97. At
most it points to joint research and development projects with three entities that did not result in a
commercial product. See id.; CX-1231C at Q/A 1820-1851. As for failure by others, Tela cites
one instance of such failure, in which a company “attempted to make lithographic friendly designs”
in a manner different from the 334 patent’s claims, but could not reduce the chip area enough. See
CX-1231C at Q/A 1818-1819. Any long-felt but unmet need seemingly was satisfied by the Intel
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45nm Products, which used two-dimensional first metal structures. See RX-0007C at Q/A 422-
423; RDX-0009C at *125.
There is evidence of copying by Intel, but it is limited to linear first-metal structures
oriented perpendicular to the gates. See CX-1231C at Q/A 1855-1861. There is also evidence that
licensing resulted in substantial revenues for Tela. See CX-1231C at Q/A 1852-1854.
Nonetheless, it is not clear to what extent the licensing was connected to the claims of the 334
patent, as opposed to other licensed patents, or simply to resolve litigation. See RIB at 119-120.
So on balance, the secondary considerations of non-obviousness do not change the ultimate
conclusion: Respondents have not carried their burden of proving that claim 1 is invalid as
obvious, and, by extension, claims 2, 5, and 15, which depend therefrom. Ortho-McNeil Pharm.,
Inc. v. Mylan Labs., Inc., 520 F.3d 1358, 1365 (Fed. Cir. 2008) (citing In re Fritch, 972 F.2d 1260,
1266 (Fed. Cir. 1992)) (“But if claim 1 is not obvious then claims 6-8 also cannot be obvious
because they all depend from a nonobvious claim.”).
7. Covenant Not to Sue
In addition to theories of invalidity, Respondents contend there can be no infringement of
the 334 patent in light of a covenant not to sue (hereafter, “CNTS”) between Tela
and respondent Intel. RIB at 120-121. Respondents argue “Tela agreed
Id. (citing RX-0003C at
Q/A 43; RX-0054C at *1-2. Because the 334 patent has a priority date of May 13, 2015,
Respondents argue it is covered by the CNTS. Id. at 121. Respondents further argue the CNTS
does not allow for a patent to simply claim priority on its face to a certain date, “but rather that it
[must] ‘claim priority’ in general” according to the strictures of 35 U.S.C. §§ 112, 120. See RRB
at 63-64 (citing RX-0054C at *1).
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Tela and the Staff correctly point out the fatal flaw in this argument. The CNTS states Tela
RX-0054C at *1-2; see SIB
at 94; CRB at 63. As a matter of contract interpretation, this “claim priority” language is not
ambiguous—it refers to claims of priority reflected in an issued patent or application for patent
instrument (see RX-0054C at *1 (defining “Company Patent Right”), 2 (defining “Patent
Rights”)), and not any sort of established priority. See, e.g., Nat. Alts. Int’l, Inc. v. Iancu, 904 F.3d
1375, 1380 (Fed. Cir. 2018) (citing In re NTP, Inc., 654 F.3d 1268, 1276 (Fed. Cir. 2011)) (“NAI's
‘vesting’ argument conflates properly claiming priority and demonstrating entitlement to priority.
Patent claims ‘are not entitled to an earlier priority date merely because the patentee claims
priority.’”). To be sure, 35 U.S.C. § 120 “requires that the invention ‘be disclosed in the manner
provided by the first paragraph of section 112 . . . .’” (RRB at 64), but the CNTS concerns
“claim[s]” of priority, not proof of priority (RX-0054C at *1-2). And to merely claim priority, an
application need only “contain[] or [be] amended to contain a specific reference to the earlier filed
application.” 35 U.S.C. § 120. There is no dispute that the 334 Patent contains such a reference.
As Respondents’ defense depends on an incorrect interpretation of the CNTS, it is not
persuasive and the defense fails.
V. U.S. PATENT NO. 10,186,523
A. Level of Ordinary Skill in the Art
As with the 334 patent, a person having ordinary skill in the art of the 523 patent at the
time of invention “would have: (1) a bachelor’s degree in electrical engineering or computer
engineering with at least three years of experience in the field of semiconductor layout technology
129
and integrated circuit design; (2) a master’s degree in electrical engineering or computer
engineering with at least two years of experience in the same field; (3) a bachelor’s degree in
physics or materials science with at least five years of experience in the same field; or (4) a
comparable combination of education and experience.” Order No. 34 at 8. The parties do not
challenge this determination (see RIB at 15; SIB at 24; see generally CIB; CRB; RRB; SRB), and
it is applied throughout this initial determination.
B. Claims-at-Issue
Claims 1-11, 14-20, and 25-28 of the 523 patent are at issue in this investigation, either
through allegations of infringement or of the domestic industry technical prong. See CIB at 102,
135. 8 These claims are reproduced below along with additional claim limitation identifiers:
1. [1a] A semiconductor chip, comprising: gate electrode features formed
within a region of the semiconductor chip, the gate electrode features
formed in part based on corresponding gate electrode feature layout shapes
used as an input to a lithography process,
[1b] the gate electrode feature layout shapes positioned in accordance with
a gate horizontal grid that includes at least seven gate gridlines, wherein all
gate gridlines extend in a y-direction, wherein adjacent gate gridlines are
separated from each other by a gate pitch, each gate electrode feature layout
shape in the region having a substantially rectangular shape and positioned
to extend lengthwise in the y-direction in a substantially centered manner
along an associated gate gridline,
[1c] wherein each gate gridline has at least one gate electrode feature layout
shape positioned thereon,
[1d] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form
a gate electrode of a transistor of a second transistor type, wherein at least
one gate electrode feature layout shape within the region corresponds to a
gate electrode feature that forms at least one gate electrode of at least one
8 Again, Tela does not identify claim 25 as infringed, but it is implicated by asserted
dependent claim 26.
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transistor of the second transistor type and does not form a gate electrode of
a transistor of the first transistor type;
[1e] at least six gate contact structures formed within the region of the
semiconductor chip, the at least six gate contact structures formed in part
utilizing corresponding at least six gate contact structure layout shapes as
an input to a lithography process, wherein at least six gate electrode features
within the region have a respective top surface in physical and electrical
contact with a corresponding one of the at least six gate contact structures,
[1f] each of the at least six gate contact structure layout shapes having a
substantially rectangular shape with a corresponding length greater than a
corresponding width and with the corresponding length oriented in an x-
direction, each of the at least six gate contact structure layout shapes
positioned and sized to overlap both edges of the gate electrode feature
layout shape corresponding to the gate electrode feature to which it is in
physical and electrical contact; and
[1g] a first-metal layer formed above top surfaces of the gate electrode
features within the region of the semiconductor chip, the first-metal layer
positioned first in a stack of metal layers counting upward from top surfaces
of the gate electrode features, the first-metal layer separated from the top
surfaces of the gate electrode features by at least one insulator material,
[1h] wherein the first-metal layer includes first-metal structures formed in
part based on corresponding first-metal structure layout shapes used as an
input to a lithography process,
[1i] wherein the first-metal structure layout shapes are positioned in
accordance with a first-metal vertical grid, the first-metal vertical grid
including at least eight first-metal gridlines, wherein all first-metal gridlines
extend in the x-direction, wherein at least eight of the at least eight first-
metal gridlines have at least one first-metal structure layout shape
positioned thereon, each first-metal structure layout shape in the region
having a substantially rectangular shape and positioned to extend
lengthwise in the x-direction in a substantially centered manner on an
associated first-metal gridline,
[1j] wherein the region includes at least four transistors of the first transistor
type and at least four transistors of the second transistor type that
collectively form part of a logic circuit, wherein electrical connections
within the logic circuit collectively include at least five first-metal structures
corresponding to at least five first-metal structure layout shapes respectively
positioned on at least five different first-metal gridlines,
[1k] wherein each transistor within the region of the semiconductor chip is
formed in part by a corresponding diffusion region, wherein some diffusion
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regions within the region of the semiconductor chip are physically and
electrically contacted by at least one diffusion contact structure,
[1l] the at least one diffusion contact structure formed in part utilizing
corresponding at least one diffusion contact structure layout shape as an
input to a lithography process,
[1m] each diffusion contact structure layout shape within the region
positioned in a substantially centered manner along an associated diffusion
contact gridline of a diffusion contact grid, the diffusion contact grid having
a diffusion contact gridline-to-diffusion contact gridline spacing measured
in the x-direction equal to the gate pitch.
2. [2a] The semiconductor chip as recited in claim 1, further comprising: a
second-metal layer formed above the first-metal layer within the region of
the semiconductor chip, the second-metal layer positioned second in the
stack of metal layers counting upward from top surfaces of the gate
electrode features, the second-metal layer separated from the first-metal
layer by at least one insulator material,
[2b] the second-metal layer including second-metal structures formed in
part based on corresponding second-metal structure layout shapes used as
an input to a lithography process, the second-metal layer layout shapes
positioned in accordance with a second-metal horizontal grid, the second-
metal horizontal grid including at least eight second-metal gridlines,
[2c] wherein all second-metal gridlines extend in the y-direction, wherein
at least eight of the at least eight second-metal gridlines have at least one
second-metal structure layout shape positioned thereon, each second-metal
structure layout shape in the region having a substantially rectangular shape
and positioned to extend lengthwise in the y-direction in a substantially
centered manner along an associated second-metal gridline,
[2d] wherein some second-metal structures within the region are electrically
connected to at least one first-metal structure within the region through at
least one first-metal-to-second-metal via structure, each first-metal-to-
second-metal via structure within the region formed in part based on
corresponding first-metal-to-second-metal via structure layout shape used
as an input to a lithography process, each first-metal-to-second-metal via
structure layout shape within the region positioned in a substantially
centered manner along an associated second-metal gridline.
3. The semiconductor chip as recited in claim 2, wherein each first-metal
structure layout shape in the region has a width measured in the y-direction
that is either a first width or a second width, the second width different than
the first width, the first-metal layer including at least one first-metal
structure formed in part by a first-metal structure layout shape that has the
132
first width, the first-metal layer including at least one first-metal structure
formed in part by a first-metal layout shape that has the second width.
4. The semiconductor chip as recited in claim 3, wherein at least one gate
electrode feature within the region that forms at least one gate electrode of
at least one transistor of the first transistor type and does not form a gate
electrode of a transistor of the second transistor type is electrically
connected to at least one gate electrode feature within the region that forms
at least one gate electrode of at least one transistor of the second transistor
type and does not form a gate electrode of a transistor of the first transistor
type through an electrical connection that includes at least one first-metal
structure and at least one second-metal structure.
5. The semiconductor chip as recited in claim 2, wherein the at least six gate
contact structure layout shapes are positioned in accordance with a contact
vertical grid, the contact vertical grid including contact gridlines extending
in the x-direction, each of the at least six gate contact structure layout shapes
positioned to extend lengthwise in the x-direction in a substantially centered
manner along an associated contact gridline, and at least two of the at least
six gate contact structure layout shapes positioned to also extend lengthwise
in the x-direction in a substantially centered manner along a corresponding
first-metal gridline.
6. [6a] The semiconductor chip as recited in claim 2, wherein each first-
metal structure layout shape in the region has a width measured in the y-
direction that is one of a plurality of widths, the plurality of widths including
a first width and a second width, the first width smaller than the second
width, the first-metal layer including at least one first-metal structure
formed in part by a first-metal structure layout shape that has the first width,
the first-metal layer including at least one first-metal structure formed in
part by a first-metal structure layout shape that has the second width,
[6b] wherein each first-metal-to-second-metal via structure that contacts a
first-metal structure formed in part by a first-metal structure layout shape
having the first width is formed at least in part by a first-metal-to-second-
metal via structure layout shape that is intersected by a corresponding first-
metal gridline.
7. The semiconductor chip as recited in claim 6, wherein each first-metal-
to-second-metal via structure layout shape is intersected by a corresponding
first-metal gridline.
8. The semiconductor chip as recited in claim 2, wherein adjacent second-
metal gridlines are separated from each other by a second-metal pitch, the
second-metal pitch equal to the gate pitch, the second-metal horizontal grid
aligned with the diffusion contact grid.
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9. The semiconductor chip as recited in claim 8, wherein all second-metal
structure layout shapes in the region of the semiconductor chip have a same
width as measured in the x-direction.
10. [10a] The semiconductor chip as recited in claim 9, further comprising:
a third-metal layer formed above the second-metal layer within the region
of the semiconductor chip, the third-metal layer positioned third in the stack
of metal layers counting upward from top surfaces of the gate electrode
features, the third-metal layer separated from the second-metal layer by at
least one insulator material,
[10b] the third-metal layer including third-metal structures formed in part
based on corresponding third-metal structure layout shapes used as an input
to a lithography process, the third-metal layer layout shapes positioned in
accordance with a third-metal vertical grid, the third-metal vertical grid
including at least eight third-metal gridlines,
[10c] wherein all third-metal gridlines extend in the x-direction, wherein at
least eight of the at least eight third-metal gridlines have at least one third-
metal structure layout shape positioned thereon, each third-metal structure
layout shape in the region having a substantially rectangular shape and
positioned to extend lengthwise in the x-direction in a substantially centered
manner along an associated third-metal gridline,
[10d] wherein some third-metal structures within the region are electrically
connected to at least one second-metal structure within the region through
at least one second-metal-to-third-metal via structure, each second-metal-
to-third-metal via structure within the region formed in part based on
corresponding second-metal-to-third-metal via structure layout shape used
as an input to a lithography process, wherein at least one second-metal-to-
third-metal via structure layout shape within the region is positioned in a
substantially centered manner along an associated third-metal gridline.
11. The semiconductor chip as recited in claim 10, wherein each second-
metal-to-third-metal via structure layout shape is intersected by a
corresponding second-metal gridline.
. . . .
14. The semiconductor chip as recited in claim 1, wherein at least one of the
at least six gate contact structures is in physical and electrical contact with,
and is substantially centered in the x-direction on, a gate electrode feature
within the region that forms at least one gate electrode of at least one
transistor of the first transistor type and that does not form a gate electrode
of a transistor of the second transistor type.
134
15. The semiconductor chip as recited in claim 1, wherein each of the at
least six gate contact structure layout shapes is intersected by a
corresponding gate gridline.
16. The semiconductor chip as recited in claim 1, wherein the first-metal
layer includes at least eight first-metal structure layout shapes positioned on
four first-metal layer gridlines such that a different two of the at least eight
first-metal structure layout shapes is positioned on each of the four first-
metal layer gridlines, wherein each of the at least eight first-metal structure
layout shapes is positioned next to and spaced apart from at least one other
first-metal structure layout shape at a first-metal pitch.
17. The semiconductor chip as recited in claim 1, wherein the at least eight
of the at least eight first-metal gridlines that have at least one first-metal
structure layout shape positioned thereon are spaced at a first-metal pitch.
18. [18a] The semiconductor chip as recited in claim 1, further comprising:
a second-metal layer formed above the first-metal layer within the region of
the semiconductor chip, the second-metal layer positioned second in the
stack of metal layers counting upward from top surfaces of the gate
electrode features, the second-metal layer separated from the first-metal
layer by at least one insulator material, the second-metal layer including
second-metal structures formed in part based on corresponding second-
metal structure layout shapes used as an input to a lithography process, the
second-metal structure layout shapes positioned in accordance with a
second-metal horizontal grid, the second-metal horizontal grid including at
least eight second-metal gridlines, wherein all second-metal gridlines
extend in the y-direction, wherein at least eight of the at least eight second-
metal gridlines have at least one second-metal structure layout shape
positioned thereon, each second-metal structure layout shape in the region
having a substantially rectangular shape and positioned to extend
lengthwise in the y-direction in a substantially centered manner along an
associated second-metal gridline; and
[18b] a third-metal layer formed above the second-metal layer within the
region of the semiconductor chip, the third-metal layer positioned third in
the stack of metal layers counting upward from top surfaces of the gate
electrode features, the third-metal layer separated from the second-metal
layer by at least one insulator material, the third-metal layer including third-
metal structures formed in part based on corresponding third-metal structure
layout shapes used as an input to a lithography process, the third-metal
structure layout shapes positioned in accordance with a third-metal vertical
grid, the third-metal vertical grid including at least eight third-metal
gridlines, wherein all third-metal gridlines extend in the x-direction,
wherein at least eight of the at least eight third-metal gridlines have at least
one third-metal structure layout shape positioned thereon, each third-metal
structure layout shape in the region having a substantially rectangular shape
135
and positioned to extend lengthwise in the x-direction in a substantially
centered manner along an associated third-metal gridline.
19. [19a] The semiconductor chip as recited in claim 18, wherein each first-
metal structure layout shape in the region has a width measured in the y-
direction that is one of a plurality of widths, the plurality of widths including
a first width and a second width, the first width smaller than the second
width, the first-metal layer including at least one first-metal structure
formed in part by a first-metal structure layout shape that has the first width,
the first-metal layer including at least one first-metal structure formed in
part by a first-metal structure layout shape that has the second width,
[19b] wherein each first-metal-to-second-metal via structure that contacts a
first-metal structure formed in part by a first-metal structure layout shape
having the first width is formed at least in part by a first-metal-to-second-
metal via structure layout shape that is intersected by a corresponding first-
metal gridline.
20. The semiconductor chip as recited in claim 18, wherein some third-
metal structures within the region are electrically connected to at least one
second-metal structure within the region through at least one second-metal-
to-third-metal via structure, each second-metal-to-third-metal via structure
formed at least in part by a second-metal-to-third-metal via structure layout
shape that is intersected by a corresponding second-metal gridline.
. . . .
25. The semiconductor chip as recited in claim 1, wherein the at least four
transistors of the first transistor type are collectively separated from the at
least four transistors of the second transistor type by an inner region that
does not include another transistor.
26. The semiconductor chip as recited in claim 25, wherein at least one of
the at least six gate contact structure layout shapes is positioned over the
inner region and forms a gate contact structure that is in physical and
electrical contact with, and is substantially centered in the x-direction on, a
gate electrode feature within the region that forms at least one gate electrode
of at least one transistor.
27. [27a] A semiconductor chip, comprising: gate electrode features formed
within a region of the semiconductor chip,
[27b] the gate electrode features formed in part based on corresponding gate
electrode feature layout shapes used as an input to a lithography process,
[27c] the gate electrode feature layout shapes positioned in accordance with
a gate horizontal grid that includes at least seven gate gridlines, wherein
adjacent gate gridlines are separated from each other by a gate pitch,
136
[27d] each gate electrode feature layout shape in the region having a
substantially rectangular shape and positioned to extend lengthwise in a y-
direction in a substantially centered manner along an associated gate
gridline,
[27e] wherein each gate gridline has at least one gate electrode feature
layout shape positioned thereon,
[27f] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form
a gate electrode of a transistor of a second transistor type,
[27g] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of the second transistor type and does not
form a gate electrode of a transistor of the first transistor type;
[27h] a number of gate contact structures formed within the region of the
semiconductor chip, the gate contact structures formed in part utilizing
corresponding gate contact structure layout shapes as an input to a
lithography process, wherein each gate electrode feature that forms any
transistor gate electrode within the region has a respective top surface in
physical and electrical contact with a corresponding gate contact structure
formed at least in part from a gate contact structure layout shape having a
substantially rectangular shape,
[27i] wherein each gate contact structure that contacts a given gate electrode
feature that forms any transistor gate electrode does not contact another gate
electrode feature, wherein any gate contact structure layout shape that has a
corresponding length greater than or equal to a corresponding width is
oriented to have its corresponding length extend in an x-direction; and
[27j] a first-metal layer formed above top surfaces of the gate electrode
features within the region of the semiconductor chip, the first-metal layer
positioned first in a stack of metal layers counting upward from top surfaces
of the gate electrode features, the first-metal layer separated from the top
surfaces of the gate electrode features by at least one insulator material,
[27k] the first-metal layer including first-metal structures formed in part
based on corresponding first-metal structure layout shapes used as an input
to a lithography process,
[27l] wherein each transistor within the region is formed in part by a
corresponding diffusion region, each diffusion region formed in part
utilizing a corresponding diffusion region layout shape as an input to a
lithography process, wherein each diffusion region that forms part of any
137
transistor within the region is formed at least in part by a corresponding
diffusion region layout shape that has a substantially rectangular shape,
[27m] wherein the region includes at least four transistors of the first
transistor type and at least four transistors of the second transistor type that
collectively form a portion of a multiplexer or a portion of a latch, wherein
at least two first-metal structures form portions of one or more electrical
connections within the multiplexer or the latch.
28. [28a] A semiconductor chip, comprising: gate electrode features formed
within a region of the semiconductor chip,
[28b] the gate electrode features formed in part based on corresponding gate
electrode feature layout shapes used as an input to a lithography process,
[28c] the gate electrode feature layout shapes positioned in accordance with
a gate horizontal grid that includes a number of gate gridlines, wherein
adjacent gate gridlines are separated from each other by a gate pitch,
[28d] each gate electrode feature layout shape in the region having a
substantially rectangular shape and positioned to extend lengthwise in a y-
direction in a substantially centered manner along an associated gate
gridline,
[28e] wherein each gate gridline has at least one gate electrode feature
layout shape positioned thereon,
[28f] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form
a gate electrode of a transistor of a second transistor type,
[28g] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of the second transistor type and does not
form a gate electrode of a transistor of the first transistor type;
[28h] a number of gate contact structures formed within the region of the
semiconductor chip, the gate contact structures formed in part utilizing
corresponding gate contact structure layout shapes as an input to a
lithography process, wherein each of at least six gate electrode features
within the region has a respective top surface in physical and electrical
contact with a corresponding gate contact structure formed at least in part
from a gate contact structure layout shape having a substantially rectangular
shape,
[28i] wherein each gate contact structure is centered in an x-direction on the
gate electrode feature with which it physical contacts,
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[28j] wherein each gate contact structure layout shape that has the
substantially rectangular shape has a corresponding length greater than or
equal to a corresponding width and is oriented to have its corresponding
length extend in the x-direction, wherein each of the number of gate contact
structures is in physical contact with only one of any of the gate electrode
features; and
[28k] a first-metal layer formed above top surfaces of the gate electrode
features within the region of the semiconductor chip, the first-metal layer
positioned first in a stack of metal layers counting upward from top surfaces
of the gate electrode features, the first-metal layer separated from the top
surfaces of the gate electrode features by at least one insulator material,
[28l] the first-metal layer including at least two first-metal structures formed
in part based on corresponding first-metal structure layout shapes used as
an input to a lithography process, the at least two first-metal structures
forming portions of one or more electrical connections within the region of
the semiconductor chip,
[28m] wherein each transistor within the region is formed in part by a
corresponding diffusion region, each diffusion region formed in part
utilizing a corresponding diffusion region layout shape as an input to a
lithography process, wherein each diffusion region that forms part of any
transistor within the region is formed at least in part by a corresponding
diffusion region layout shape that has a substantially rectangular shape.
See 523 patent at cls. 1-11, 14-20, 25-28 (annotated).
C. Claim Construction
As part of the Markman process, the following terms of the 523 patent were construed,
either as agreed between the parties or as determined by Order No. 34:
Claim Term Construction
“a lithography process” “a process by which a pattern is imprinted on a
resist or semiconductor wafer using light as a
mask”
“gate electrode” “that portion of a gate electrode feature that forms
a transistor gate”
“gate electrode feature(s)” / “gate
structure(s)”
“a feature comprising a transistor gate”
“diffusion region(s)” “selected portions of the substrate within which
impurities have been introduced to form the
139
source or drain of a transistor”
“[gate horizontal / first-metal vertical grid];
[second-metal horizontal] grid; [contact
vertical] grid; [third-metal vertical] grid;
[diffusion contact] grid”
“projected gridlines used at least during the
layout stage of integrated circuit manufacturing”
“[gate / metal / contact] gridline(s)” “one of the lines making up a grid”
“gate pitch” “center-to-center separation distance between
adjacent gate features”
See generally Order No. 34 at 47, 52, 55, 56, 59, 60, 62. As with the 334 patent, “contact
structure(s)” and “gate contact structure(s)” were not construed. Id. at 61. The parties do not
explicitly identify these terms, or any others, as requiring construction. See RIB at 15-16; SIB at
23-24; see generally CIB; CRB; RRB; SRB. Thus, “contact structure(s)” and “gate contact
structure(s)” are addressed below in the infringement and validity determinations to the extent
required.
D. Infringement
According to Tela’s post-hearing briefing, the use, manufacture, or sale of the following
Accused Products are alleged to infringe the asserted claims of the 523 patent:
Claims Accused Products Alleged to Infringe
1-11, 14-20, 25, 26 Intel 14nm Products
1-7, 14-20, 25, 26 Intel 10nm Products
See CIB at 102. For the reasons discussed below, Tela has shown infringement for the Broadwell,
Skylake, Kaby Lake, Coffee Lake, and Cascade Lake models of Intel 14nm Products under all of
the asserted claims, and the Intel 10nm Products under all of the asserted claims.
140
1. Undisputed Claims
Respondents do not contest Tela’s claims of infringement under claims 2-11, 14-20, 25,
and 26, apart from their dependency on claim 1, for which infringement is disputed. See RIB at
121-44; RRB at 64-79. The Staff similarly has no dispute as to these claims. See SIB at 109;
SRB at 34-42. In view of the testimony of Dr. Foty that all the relevant Accused Products include
the limitations recited in these claims, those identified Accused Products meet the limitations of the
dependent claims as alleged. See CX-1144C at Q/A 1030-1450, 2135-2385; CIB at 123-135.
2. Disputed Claims
Respondents do, however, contest Tela’s claims of infringement of independent claim 1.
See RIB at 121-144. The Staff similarly contests infringement of this claim. See SIB at 98-109.
For the reasons discussed below, Tela has shown infringement of claim 1 for the Intel 10nm
Products and certain of the Intel 14nm Products.
For reference, claim 1 of the 523 patent requires:
1. [1a] A semiconductor chip, comprising: gate electrode features formed
within a region of the semiconductor chip, the gate electrode features
formed in part based on corresponding gate electrode feature layout shapes
used as an input to a lithography process,
[1b] the gate electrode feature layout shapes positioned in accordance with
a gate horizontal grid that includes at least seven gate gridlines, wherein all
gate gridlines extend in a y-direction, wherein adjacent gate gridlines are
separated from each other by a gate pitch, each gate electrode feature layout
shape in the region having a substantially rectangular shape and positioned
to extend lengthwise in the y-direction in a substantially centered manner
along an associated gate gridline,
[1c] wherein each gate gridline has at least one gate electrode feature layout
shape positioned thereon,
[1d] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form
a gate electrode of a transistor of a second transistor type, wherein at least
one gate electrode feature layout shape within the region corresponds to a
141
gate electrode feature that forms at least one gate electrode of at least one
transistor of the second transistor type and does not form a gate electrode of
a transistor of the first transistor type;
[1e] at least six gate contact structures formed within the region of the
semiconductor chip, the at least six gate contact structures formed in part
utilizing corresponding at least six gate contact structure layout shapes as
an input to a lithography process, wherein at least six gate electrode features
within the region have a respective top surface in physical and electrical
contact with a corresponding one of the at least six gate contact structures,
[1f] each of the at least six gate contact structure layout shapes having a
substantially rectangular shape with a corresponding length greater than a
corresponding width and with the corresponding length oriented in an x-
direction, each of the at least six gate contact structure layout shapes
positioned and sized to overlap both edges of the gate electrode feature
layout shape corresponding to the gate electrode feature to which it is in
physical and electrical contact; and
[1g] a first-metal layer formed above top surfaces of the gate electrode
features within the region of the semiconductor chip, the first-metal layer
positioned first in a stack of metal layers counting upward from top surfaces
of the gate electrode features, the first-metal layer separated from the top
surfaces of the gate electrode features by at least one insulator material,
[1h] wherein the first-metal layer includes first-metal structures formed in
part based on corresponding first-metal structure layout shapes used as an
input to a lithography process,
[1i] wherein the first-metal structure layout shapes are positioned in
accordance with a first-metal vertical grid, the first-metal vertical grid
including at least eight first-metal gridlines, wherein all first-metal gridlines
extend in the x-direction, wherein at least eight of the at least eight first-
metal gridlines have at least one first-metal structure layout shape
positioned thereon, each first-metal structure layout shape in the region
having a substantially rectangular shape and positioned to extend
lengthwise in the x-direction in a substantially centered manner on an
associated first-metal gridline,
[1j] wherein the region includes at least four transistors of the first transistor
type and at least four transistors of the second transistor type that
collectively form part of a logic circuit, wherein electrical connections
within the logic circuit collectively include at least five first-metal structures
corresponding to at least five first-metal structure layout shapes respectively
positioned on at least five different first-metal gridlines,
142
[1k] wherein each transistor within the region of the semiconductor chip is
formed in part by a corresponding diffusion region, wherein some diffusion
regions within the region of the semiconductor chip are physically and
electrically contacted by at least one diffusion contact structure,
[1l] the at least one diffusion contact structure formed in part utilizing
corresponding at least one diffusion contact structure layout shape as an
input to a lithography process,
[1m] each diffusion contact structure layout shape within the region
positioned in a substantially centered manner along an associated diffusion
contact gridline of a diffusion contact grid, the diffusion contact grid having
a diffusion contact gridline-to-diffusion contact gridline spacing measured
in the x-direction equal to the gate pitch.
523 patent at cl. 1 (annotated). Several disputes exist between the parties concerning whether Tela
has sufficiently shown the Accused Products meet various limitations of the claim. These are
addressed below. In view of the testimony of Dr. Foty that the Accused Products meet those
remaining limitations of claim 1 which are not in dispute, the Accused Products have been shown
to meet them as alleged. See CX-1144C at Q/A 596-1028, 1876-2133; CIB at 102-123.
a. Gate electrode features formed in part based on corresponding
gate electrode feature layout shapes used as an input to a
lithography process
First, Respondents and Staff dispute that “the gate electrode features formed in part based
on corresponding gate electrode feature layout shapes used as an input to a lithography process”
is met in the Intel 14nm Products and the Intel 10nm Products. RIB at 121-132, 143; SIB at 98-
105.
For this limitation, Tela, through its expert, identifies certain Intel layout shapes as meeting
the “gate electrode feature layout shapes” element. See CIB at 102-10 (citing, inter alia, CX-
1144C at Q/A 683-745), 104 (citing, inter alia, CX-1144C at Q/A 1909-1941). One example of
these gate electrode layout shapes, for the cell of certain Intel 14nm Products, is
shown below:
143
CDX-0008C at *2; see CX-1144C at Q/A 616. Tela argues “[these] gate electrode feature layout
shapes are an input to a lithography process because they are used to generate the set of masks
used to pattern the gate electrode features onto the semiconductor chip.” CIB at 103 (citing CX-
1144C at Q/A 377-378, 391, 454-456, 675-682). It is these, Tela contends, which are “then used
to lithographically pattern features onto a photoresist that is used to define the particular patterns
specified by the layout onto the chip through additional processing steps.” Id. (citing CX-1144C
at Q/A 377-378, 391, 454-456, 675-682); see CRB at 67. Tela disputes that the shapes contained
on the mask need to correlate or be “essentially identical” to the gate structure layout shapes, as
this would be an attempt to limit the claims of the 523 patent to just one of its disclosed
embodiments. CIB at 107 (citing Liebel-Flarsheim, 358 F.3d 898; 523 patent at Fig. 13A; CX-
1144C at Q/A 130; Hr’g Tr. at 853:24-855:8); see id. at 108 (“The language ‘formed in part based
on corresponding gate electrode feature layout shapes,’ merely requires the layout shape to be one
part of forming the gate electrode features.”). Lastly, Tela claims “[t]here is no dispute that the
gate electrode features in the Intel 14nm and 10nm Products correspond to the gate electrode
144
feature layout shapes specified by the layout” (CIB at 110 (citing CX-1144C at Q/A 391, 427;
Hr’g Tr. at 751:19-753:13, 754:4; RX-0007C at Q/A 46)), and notes there is “no dispute that Intel’s
M0 layout shapes are an input to a lithography process, despite the fact that
(CRB at 68 (citing CX-1144C at Q/A 330-348)).
In opposition, Respondents argue Tela’s identification of layout shapes must fail because
“it is undisputed that in the accused process nodes Intel
RIB at 121-122 (citing Hr’g Tr. at 720:7-11; 980:18-22). Rather, Respondents urge
“the dimensions of Intel’s gates are defined using
Id. at 122 (citing Hr’g Tr. at 719:15-720:11). Respondents reason:
the identified gate layout shapes are not “used as an
input” to a lithography process as claimed, and the Accused Products do not
practice this limitation. RX-0014C (Subramanian) at Q/A 295, 325.
Id. Respondents emphasize non-infringement based on the idea that the Asserted Patents,
including the 523 patent, are intended to solve problems with a process (lithography) that Intel
simply no longer uses because of the small size of its process nodes
See generally id. at 122-128 (citations omitted), 130; RRB at 64-65.
More specifically, Respondents argue Tela’s identified layout shapes are not those that
Intel actually inputs into lithography—those would be the
shown in the below demonstrative:
145
RIB at 128 (citing RDX-0016C at *149). Respondents contend the only “input[s]” to lithography
are the shapes on the masks used: “the shapes ‘used as an input to a lithography process’ are those
shapes that are actually input into a lithography process, i.e., the shapes on the lithography mask.”
See RIB at 130-131 (citing, inter alia, RX-1662C at 55:8-18; RX-0014C at Q/A 343-345; RX-
1660C at 40:12-15). Yet, Respondents caution, these patterns cannot meet the claims “because
they are not the recited gate layout shapes,” among other reasons. See RIB at 129 (citing RX-
0014C at Q/A 314-316, 320-324); RRB at 69.
Importantly, Respondents claim “[t]he
CIB at 129 (citing Hr’g Tr. at 720:12-20); RRB at 66 (citing Hr’g Tr. at 716:19-718:4). In
their reply brief, they similarly claim “Intel’s gate layout shapes
RRB at 65. Respondents argue Intel’s
146
Id.
(citing RX-0008C at Q/A 6, 100-102, 122; Hr’g Tr. at 716:19-718:4).
The Staff agrees with each of Respondents’ non-infringement positions. See generally SIB
at 98-105. The Staff views Tela’s theory as “rel[ying] on drawn poly layouts shapes from the
design phase to meet this limitation. But it is undisputed that Intel’s drawn poly layout shapes are
not used during lithography in the fabrication phase.” SIB at 98 (citing Hr’g Tr. at 720:7-11,
980:18-22; RX-0008C at Q/A 110-117) (emphasis in original).
The limitation is met. There is no dispute that the
See RX-0008C at Q/A 6;
CIB at 103 (citing CX-1144C at Q/A 377-378, 391, 454-456, 675-682); RRB at 65-66. In
describing the three mask shapes reproduced above in RDX-0016C at *149, Dr. Subramanian
correctly states that (RX-0014C
at Q/A 310), but he does not state they
Intel witness
Hr’g
Tr. at 1014:2-20. Further, Dr. Subramanian himself effectively admitted
according to where gate structures are positioned in the
design layout. Compare Hr’g Tr. at 913:2-917:11 with id. at 918:20-23. Dr. Auth testified
similarly. See id. at 751:19-756:6 (discussing RDX-0010C at *22). Thus, there is no real merit to
147
Respondents’ characterization that the layout designs are “not an input to the mask creation
process.” RRB at 66 (emphasis added).
To the extent resolution of this dispute requires further construction of the claim language,
persons of ordinary skill in the art would surely consider the layout designs as “an input to a
lithography process,” even though there are other, more direct inputs. More precisely, a plain
reading of the claim is that “layout shapes” are “input[s] to a lithography process,” even if those
shapes are used to configure other mask shapes more directly linked to fabrication—a process
Respondents call an “indirect chain of software algorithms.” RRB at 66. Moreover, the term
“layout shape” explicitly appears in the claim as that which is “used as an input,” the claim
language expressly recites that the features are “based in part” on those layout shapes, and Tela’s
identified images have consistently been referred to by all parties as layout shapes. Respondents
have cited no intrinsic evidence to show that “an input” should be construed more narrowly, or
that the images Tela identifies are not “layout shapes.”
As to the Staff’s argument that the shapes “from the design phase” cannot meet the
limitation because they are not used “in the fabrication phase,” those shapes are still inputs to a
lithography process. In fact, the Staff’s argument could also be applied to the actual mask shapes
(i.e., that which are contained in files (see RX-0008C at Q/A6))—which are indisputably
inputs to a lithography process—because they are not themselves used for fabrication, but are
instead used to create physical masks which are put into the lithography machine, as explained by
Intel witness Dr. Auth and shown below:
Q. Turning to RDX-0010.0008, what exactly is a mask?
A. A lithographic photomask (or just “mask”) is a quartz plate partially
covered with a pattern defined by a chrome film. In each lithography
module during fabrication, a different mask will be fed into the lithography
machine to create the desired pattern for that stage of fabrication. This
image is from the video RDX-0018.
148
Q. How are Intel’s masks manufactured?
A.
Q. You mentioned these masks are fed into a lithography machine. Turning
to RDX-0010.0009, what does a lithography machine look like?
A. This is an image captured from a video RDX-0019. It shows the insides
of a lithography machine
The purple color indicates where light is being shone
through a sequence of mirrors, through a mask, and onto a wafer below.
149
RX-0008C at Q/A 24-26; RDX-0010 at *8, 9. Other witnesses testified that there are other inputs
to the lithography process, including Tela witnesses John Malecki (RX-1660C at 40:12-15 (“Q.
From Tela’s point of view, the input to the lithography process would be the GDS2 files that
specify the mask shapes? A. Yes. Yes.”)) and Dhrumil Gandhi (see RIB at 131 (citing RX-0014C
at Q/A 344; RX-1662C at 55:8-12) (GDSII file shapes are OPC-modified before mask creation)),
and Dr. Subramanian (RX-0014C at Q/A 611 (“if OPC is applied, the input to the lithography
process would be the OPC shapes to meet the claims”)).
With this understanding, Respondents’ and the Staff’s additional arguments regarding
are irrelevant. The limitation only requires the “gate electrode features”
to be “formed in part” by a lithography process which takes into account or “use[s]” gate feature
layout shapes (523 patent at cl. 1)—an act which Respondents acknowledge is the first step in the
process (see, e.g., RX-0008C at Q/A 103; RX-0014C at Q/A 295; RRB at 65). Thus, the limitation
is met in the Accused Products.
150
b. Gate electrode feature layout shapes positioned in accordance
with a gate horizontal grid
Second, the Staff, but not Respondents, disputes whether “gate electrode feature layout
shapes positioned in accordance with a gate horizontal grid” is met in the Intel 14nm Products and
Intel 10nm Products. SIB at 105. Order No. 34 construed “grid” as “projected gridlines used at
least during the layout stage of integrated circuit manufacturing.” Order No. 34 at 59.
For this limitation, Tela again refers to Intel’s alleged “1-D gridded approach” and explains
that for the Intel 14nm Products “defines the ‘gate horizontal grid,’ and the gate
electrode feature layout shapes are positioned and centered along gate gridlines in the y-direction”
(CIB at 102 (citing, inter alia, CX-1144C at Q/A 683-745; CPX-0497C at -762; RX-0008C at Q/A
138; Hr’g Tr. at 801:1-802:7); CRB at 69), and a similarly defines the grid in the
Intel 10nm Products (CIB at 104-105 (citations omitted); CRB at 69). Tela provides the following
two examples from 14nm and 10nm layout files:
CIB at 103 (citing CDX-0008C at *12), 105 (citing CDX-0010C at *6).
151
The Staff contends that “[b]ecause Intel designers use a
to place the gate and metal features in accordance with the pitch and
spacing requirements as set forth by the design rules, Intel’s 14nm and 10nm Accused Products do
not practice this limitation, as Dr. Foty admits.” SIB at 105 (citing CX-1144C at Q/A 552; Hr’g
Tr. at 399:4-400:19).
As determined above with respect to the similar limitation in the 334 patent, this limitation
is met in the Accused Products. The layout files cited by Tela and Dr. Foty show
between the gate electrode feature layout shapes—i.e., their positioning is in a grid.
And Intel documentation shows this arrangement, or positioning, was “in accordance” with a
planned layout (i.e., not happenstance). That Intel also uses a different, 1nm drawing grid for
designers, as the Staff argues, is beside the point. See Hr’g Tr. at 399:15-400:9.
c. First-metal structure layout shapes are positioned in
accordance with a first-metal vertical grid
Third, Respondents and Staff dispute whether “first-metal structure layout shapes are
positioned in accordance with a first-metal vertical grid” is met in the Intel 14nm Products and
Intel 10nm Products. RIB at 132-141, 143; SIB at 105-106.
For this limitation, Tela again refers to a “1-D gridded approach” within the Accused
products and explains, per design rules, that the first-metal structures are
CIB at 115 (citing, inter alia, CX-1144C at Q/A 330-331,
887-916; CPX-0497C at -780), 117 (citing CX-1144C at Q/A 358-362, 2032-2051; CPX-0341C
at -5851; CPX-0097C at -151). Additionally, Tela argues the design rules, as discussed above,
specify
See id. at 116, 117 (citations omitted).
152
Respondents argue, as they did with the corresponding limitation of the 334 patent, that the
See RIB at 133-136, 143.
Again, Respondents emphasize (id. at 136
(citing Hr’g Tr. at 728:2-16)) as resulting in
(id. (citing Hr’g Tr. at 726:9-727:12; RX-0008C at Q/A 136-144); RRB at 72-73). According
to Respondents, “it is undisputed that Intel’s actual Metal-0 features
. . . . Accordingly, based on Dr. Foty’s own definition of the function
of a ‘grid,’ Intel does not practice the first metal ‘grid’ limitation.” RIB at 137 (citing Hr’g Tr. at
200:1-6) (emphasis in original). Respondents also argue that Dr. Foty and Tela cannot show the
presence of a “grid” on layout file images unless the gridlines are a part of those files. See id. at
138 (“Given that unavoidable fact, in order to conjure up an alleged grid, Dr. Foty is forced to
draw his own dotted lines over the shapes . . . .”), 141 (“Dr. Foty’s ex-post drawing of dotted lines
along shapes that have already been positioned cannot meet a construction that requires Intel to
have projected those gridlines during layout.”); RRB at 72
. . . . Tela has no answer
for this fundamental flaw . . . .”), 76 (“[T]he point remains the same—
”), 77-79. The Staff agrees with Respondents’ positions
on the issue. See SIB at 105-106 (“[T]here is no defined ‘grid’ that shapes must be positioned in
accordance with—whether by uniform pitch or otherwise.”); SRB at 40-41 (“In the Staff’s view,
because Intel does not define any ‘grid’ for the Metal-0 shapes to be positioned along, the Accused
Products also do not satisfy the claimed requirement that the ‘first-metal structure layout shapes
are positioned in accordance with a first-metal vertical grid.’”).
153
As with the ’334 patent, the limitation is met in the Accused Products. The layout files
cited by Tela and Dr. Foty show
See CX-1144C at Q/A 887-900, 2033-2043;
CDX-0008C at *62-67; CDX-0010C at *37-39. As to Respondents’ argument that “[u]ltimately,
Tela effectively interprets the claims to require nothing more than rectangular, parallel shapes—
while improperly ignoring the additional grid limitations, which are indisputably not met” (RRB
at 73), there is nothing more to a “grid” than an arrangement of rectangular, parallel shapes.
Inasmuch as the term “grid” requires construction, that is its plain and ordinary meaning.
Also as with the 334 patent, requiring a uniform pitch between these layout shapes per a
construction of “grid” (see, e.g., RIB at 137 (“it is undisputed that Intel’s actual Metal-0 layer does
not meet the requirement of having uniformly spaced feature locations (i.e., gridlines)”); RRB at
74 (“Intel does not practice the Metal-0 limitation because it is undisputed that the Metal-0 layer’s
layout shapes are not restricted to regularly spaced gridlines.”)) is inappropriate. The first-metal
“grid” of claim 1 is not bound by any such restriction as opposed to, for example, claim 8, which
requires a second-metal layer grid defined by “a second-metal pitch, the second-metal pitch equal
to the gate pitch,” and claim 17, which requires eight first-metal gridlines “spaced at a first-metal
pitch.” Id. at cls. 8, 17 (emphases added). Under principles of claim differentiation, it would thus
be improper to read in a pitch (i.e., the same pitch), or any defined amount of pitch, into the basic
claim term of “grid.” Curtiss-Wright, 438 F.3d at 1380; see Karlin Tech., Inc. v. Surgical
Dynamics, Inc., 177 F.3d 968, 971-72 (Fed. Cir. 1999) (“different words or phrases used in
separate claims” are presumed to indicate “the claims have different meanings and scope”).
Accordingly, the limitation is met.
154
d. Each gate gridline has at least one gate electrode feature layout
shape positioned thereon
Fourth, Respondents dispute whether “each gate gridline has at least one gate electrode
feature layout shape positioned thereon” is met in the Intel 14nm Products and Intel 10nm
Products, whereas the Staff only disputes the limitation for the Intel 10nm Products. RIB at 141-
144; SIB at 107. For this limitation, Tela incorporates its discussion of the same limitation for the
334 patent. See CIB at 110; CRB at 69.
In opposition, Respondents note “gate electrode feature” is construed the same as “gate
structure” in the 334 patent—a “feature comprising a transistor gate”—and Tela relies on the same
gridlines for the 523 patent as it did for the 334 patent. See RIB at 141-142. Respondents thus
incorporate their argument as to non-infringement of the 334 patent. See id. at 141-144; RRB at
79. The Staff similarly adopts its positions as in the 334 patent—the limitation is met for the Intel
14nm Products but not for the Intel 10nm Products. See SIB at 107; SRB at 41. For the Intel 10nm
Products, the Staff notes Tela fails to acknowledge that Dr. Foty identified more gridlines than the
seven the claim requires, the result of which is a gridline clearly not including a gate electrode
feature. See SRB at 41 (citing CDX-0010C at *12).
Tela has identified and relies on the same gridlines for each cell as it did under the 334
patent. See CX-1144C at Q/A 725-733, 1932-1937; CDX-0008C at *9-21; CDX-0010C at *6-13.
Under the same reasoning, given above, the following cells from the Intel l4nm Products have not
been shown to meet this limitation:
Dr. Foty’s demonstratives indicate the latter three cells comprise the entirety of
cells for the Goldmont, Goldmont Plus, Ice Lake Chipset, and Cannon Lake Chipset products.
CDX-0012C at *25-26. Thus, the Accused Products including these models do not infringe. The
155
remaining Intel 14nm Products use one or both of so they
meet the limitation. And all of the Intel 10nm Products meet the limitation.
e. At least six gate contact structures formed within the region of
the semiconductor chip . . . wherein at least six gate electrode
features within the region have a respective top surface in
physical and electrical contact with a corresponding one of the
at least six gate contact structures
Fifth, the Staff, but not Respondents, disputes whether “at least six gate contact structures
formed within the region of the semiconductor chip . . . wherein at least six gate electrode features
within the region have a respective top surface in physical and electrical contact with a
corresponding one of the at least six gate contact structures” is met in the Intel 10nm Products.
SIB at 107. No party disputes the limitation is met in the Intel 14nm Products.
For this limitation, and the Intel 10nm Products in particular, Tela argues the
gate contact layout shapes are sized and positioned to overlap both edges of the surface of the gate
structure to which it is in physical and electrical contact. CIB at 113-114 (citing, inter alia, CX-
1144C at Q/A 315-319, 1964, 1980-1995; CPX-0341C at -5827-5828; CPX-0030C at -1493; CX-
0662 at *7, 9). Tela does not address the limitation in its reply brief. See generally CRB at 65-
71.
In opposition, the Staff argues that Intel’s
in the Intel 10nm Products. SIB at 107 (citing RX-0014C at Q/A 160-161, 166); SRB at 41.
Given this argument, it is unclear to me on what grounds the Staff is challenging the
limitation. The Staff incorporates its argument from the 334 patent (see SIB at 107; SRB at 41),
but in that discussion acknowledges direct physical contact between gate features and other M0
contact structures in the Intel 10nm Products, stating “[t]he evidence clearly shows that in TEM
images of Intel’s 10nm Accused Product, the gate-contacting portion of M0 is the same width as
156
the gate, and thus not ‘sized to overlap both edges of the top surface of the gate structure.’” SIB
at 41. To the extent Staff’s concern is that Tela attempts to show this limitation with layout files
and other illustrations (see, e.g., SIB at 41) which is insufficient for a limitation concerning actual
structures rather than imagery of actual structures (see, e.g., SIB at 41), layout files are
circumstantial evidence of actual structure, and the Staff does not dispute that there is physical and
electrical contact in the actual structures. In any event, direct teardown evidence confirms the
required contact. See RDX-0010 at *34; RX-0008C at Q/A 162. Thus, the limitation is met.
f. Diffusion region
Sixth, Respondents and Staff dispute whether “diffusion region” is met in the Intel 14nm
Products and Intel 10nm Products. RIB at 142, 144; SIB at 108.
Tela argues that “[t]he diffusion regions are defined by the portions of the diffusion region
layout shape to the sides of the gate (poly) layout shape” and “[t]he source and drain regions of
the transistors in the Intel 14nm and 10nm Products are formed within the diffusion region
specified in the layout.” CIB at 120 (citing CX-1144C at Q/A 127, 267-269, 953, 2081). To be
clear, as with the 334 patent, Tela identifies “source and drain regions” in the Accused Products
as the claimed “diffusion region[s]”:
Indeed, the Intel documentation describes that
(Tr. (Auth) at 652:6-12; RPX-1997 at
90237DOC0000307
90237DOC0000319
RPX-2021 at
90237DOC0001048, 90237DOC0001060 (same).) As such, these regions
are “diffusion regions” under the ALJ’s construction because they are
“selected portions of the substrate within which impurities have been
introduced to form the source or drain of a transistor.”
Id. at 120-121 (emphasis added).
157
In opposition, Respondents incorporate their discussion of the same limitation in claim 15
of the 334 patent. RIB at 142, 144; RRB at 79. The Staff incorporates similarly. SIB at 108; SRB
at 42.
As determined above in connection with the same limitation in claim 15 of the 334 patent,
the Accused Products’ and therefore not
literally “substrate” as required by the construction for “diffusion region.” While not explicit on
this point, however, Tela’s reply brief contends the structures qualify as
“diffusion region[s]” under the doctrine of equivalents, as in the 334 patent. See CRB at 69 (citing
CRB at 19-28). As determined above, the evidence supports this assertion. Accordingly, the
Accused Products meet this limitation.
g. Diffusion contact structure
Seventh, Respondents and Staff dispute whether “diffusion contact structure” is met in the
Intel 14nm Products and Intel 10nm Products. RIB at 142, 144; SIB at 108-109. “Contact
structure” was not previously construed, nor was “diffusion contact structure.” See Order No. 34
at 61.
For this limitation, Tela argues “[i]n the Intel 14nm and 10nm Products, the diffusion
regions are physically and electrically contacted by a diffusion contact structure which
“physically contacts the source and drain regions to form an electrical
connection to other features.” CIB at 121 (citing, inter alia, CX-1144C at Q/A 267, 297-300, 311-
314, 317, 320, 953, 2081; CPX-0097C at -146; CPX-0341C at -5815-5824; CPX-0497C at -771).
Tela also points to Intel documentation on the 10nm process which describes
Id. (citing JX-0239 at *3; Hr’g Tr. at 669:2-
670:22); CRB at 70. Tela rejects a requirement that this contact structure must be separate from
any other, such as gate contacts, citing Order No. 34. See CRB at 70 n.16 (citing Order No. 34 at
158
60-61). Even then, Tela argues, there is at least one diffusion contact structure which is clearly
separate from the gate contacts. See id. (citing CX-1144C at Q/A 989-1000, 2100-2108).
In opposition, Respondents argue that the Accused Products lack these structures and that
those identified by Tela “‘do not physically and electrically contact the substrate or any diffusion
region therein, nor do they otherwise involve ‘diffusion’ of any kind.’” RIB at 142 (citing RX-
0014C at Q/A 130-133; RX-0008C at Q/A 84-98), 144 (citing RX-0014C at Q/A 130-133; RX-
0008C at Q/A 84-98). Respondents allege Tela and Dr. Foty fail to address the requirement “that
these be ‘diffusion contact’ structures (as opposed to other types of contact structures) . . . .” Id.
at 142; see id. at 144. The Staff agrees and adds, specifically, “Intel’s gate contacts and diffusion
contact functionalities are
See SIB at 108 (citing RX-0014C at Q/A 139-144; HTC Corp.
v. Cellular Commc’ns Equip. LLC, 701 F. App’x 978, 982 (Fed. Cir. 2017)). This, the Staff argues,
is in addition to the fact that these structures do not contact substrate or any diffusion region in the
substrate. See id. at 108-109 (citing CX-1144C at Q/A 131; RX-0008C at Q/A 84-98).
Respondents’ argument depends on the absence of a “diffusion region” already discussed
above, as opposed to actually identifying and discussing what structures the accused
do physically and electrically contact. See RX-0014C at Q/A 130-133. And in fact,
Respondents’ witness, Dr. Auth, testified that the
sources and drains discussed above. RX-0008C at Q/A 95. This meets the plain and ordinary
meaning of “diffusion contact structure” as a structure which contacts what has been alleged as the
“diffusion region” under the claim. Inasmuch as construction of this limitation is required, that
plain and ordinary meaning is adopted.
159
As to the Staff’s contention that the limitation cannot be met because “Intel’s gate contact
and diffusion contact functionalities are (SIB at
108), Tela correctly points out that the claim requires only “at least one diffusion contact structure”
(523 patent at cl. 1) and, assuming a need for separateness, the Staff’s cited evidence does not
show all accused diffusion contacts also serve as gate contacts (SIB at 108 (citing RX-0014C at
Q/A 139-144; RDX-0016C at *64)). The fact that they may otherwise be in the same “layer” is
immaterial and does not conflict with the language of the claims.
Accordingly, the limitation is met in the Accused Products.
E. Domestic Industry – Technical Prong
According to Tela’s post-hearing briefing, the construction or use of the DI Products
practice claims 27 and 28 of the 523 patent. See CIB at 135. For the reasons discussed below,
Tela has not shown by a preponderance of the evidence that the DI Products practice the claims.
1. Product Representativeness
As determined above, Tela has not shown the Exynos 7420 is representative of the other
DI Products (S5E7570, S5E7870, S5E7880, S5E7883, and S5E8890) such that practice of the
claims of the Asserted Patents by the Exynos 7420 suffices for the other products as well.
Nevertheless, the following discussion of particular claim limitations assumes all products are
represented by the Exynos 7420.
2. Disputed Claims
Respondents contest Tela’s alleged practice of claim 27 but do not address claim 28. See
RIB at 145-148; RRB at 79-81. The Staff takes the same position on claim 27, but contends claim
28 is also not practiced on identical grounds. SIB at 110-112. The evidence shows Tela has not
shown direct practice of either claim.
160
a. Claim 27
For reference, claim 27 of the 523 patent requires:
27. [27a] A semiconductor chip, comprising: gate electrode features formed
within a region of the semiconductor chip,
[27b] the gate electrode features formed in part based on corresponding gate
electrode feature layout shapes used as an input to a lithography process,
[27c] the gate electrode feature layout shapes positioned in accordance with
a gate horizontal grid that includes at least seven gate gridlines, wherein
adjacent gate gridlines are separated from each other by a gate pitch,
[27d] each gate electrode feature layout shape in the region having a
substantially rectangular shape and positioned to extend lengthwise in a y-
direction in a substantially centered manner along an associated gate
gridline,
[27e] wherein each gate gridline has at least one gate electrode feature
layout shape positioned thereon,
[27f] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form
a gate electrode of a transistor of a second transistor type,
[27g] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of the second transistor type and does not
form a gate electrode of a transistor of the first transistor type;
[27h] a number of gate contact structures formed within the region of the
semiconductor chip, the gate contact structures formed in part utilizing
corresponding gate contact structure layout shapes as an input to a
lithography process, wherein each gate electrode feature that forms any
transistor gate electrode within the region has a respective top surface in
physical and electrical contact with a corresponding gate contact structure
formed at least in part from a gate contact structure layout shape having a
substantially rectangular shape,
[27i] wherein each gate contact structure that contacts a given gate electrode
feature that forms any transistor gate electrode does not contact another gate
electrode feature, wherein any gate contact structure layout shape that has a
corresponding length greater than or equal to a corresponding width is
oriented to have its corresponding length extend in an x-direction; and
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[27j] a first-metal layer formed above top surfaces of the gate electrode
features within the region of the semiconductor chip, the first-metal layer
positioned first in a stack of metal layers counting upward from top surfaces
of the gate electrode features, the first-metal layer separated from the top
surfaces of the gate electrode features by at least one insulator material,
[27k] the first-metal layer including first-metal structures formed in part
based on corresponding first-metal structure layout shapes used as an input
to a lithography process,
[27l] wherein each transistor within the region is formed in part by a
corresponding diffusion region, each diffusion region formed in part
utilizing a corresponding diffusion region layout shape as an input to a
lithography process, wherein each diffusion region that forms part of any
transistor within the region is formed at least in part by a corresponding
diffusion region layout shape that has a substantially rectangular shape,
[27m] wherein the region includes at least four transistors of the first
transistor type and at least four transistors of the second transistor type that
collectively form a portion of a multiplexer or a portion of a latch, wherein
at least two first-metal structures form portions of one or more electrical
connections within the multiplexer or the latch.
523 patent at cl. 27 (annotated). Several disputes exist between the parties concerning whether
Tela has shown the DI Products meet the limitations of the claim. These are addressed below. In
view of the testimony of Dr. Foty that the DI Products practice those remaining limitations which
are not in dispute, the DI Products have been shown to practice them as alleged. See CX-1144C
at Q/A 2709-2967; CIB at 135-140.
i. Gate electrode feature layout shapes positioned in
accordance with a gate horizontal grid
First, as with the 334 patent, Respondents and Staff dispute whether “gate electrode feature
layout shapes positioned in accordance with a gate horizontal grid” is met in the DI Products. RIB
at 148; SIB at 111.
For this limitation, Tela contends “Samsung’s 14LPP and 14LPC design manuals specify
the which are used as an input to a
lithography process to form gate electrode features.” CIB at 135-136 (citing CX-1144C at Q/A
162
2766-2770; CX-0727C at *38, 133; CX-0726C at *46, 162). Tela claims a teardown analysis also
shows practice of the limitation (see id. at 136; CRB at 71 (“[M]asks are not necessary to show
infringement.”)) and Respondents’ expert, Dr. Subramanian, “had no doubt that the Exynos 7420
chip would be manufactured from a layout designed in accordance with Samsung design rules”
(CIB at 136 (citing Hr’g Tr. at 937:20-939:5)).
In opposition, Respondents emphasize Tela’s failure to offer any “documents, testimony,
or any other evidence describing Samsung’s layout stage at all, let alone establish that any such
gridlines were used during layout.” RIB at 148 (citing RX-0014C at Q/A 437, 559-666).
“Accordingly,” Respondents argue, “Tela has not met its burden of proving that the alleged DI
products practice this limitation.” Id.; see RRB at 81 (“[N]o evidence of record . . . that the claimed
‘grid’ and ‘gridlines’ are used in the manner claimed.”). The Staff, on the other hand, argues “[t]he
DI products do not satisfy this limitation for the same reasons described above for non-
infringement by the Intel Accused Products.” SIB at 111; SRB at 43.
As determined above in the context of the 334 patent, the evidence shows the DI Products
contain actual gate electrode features positioned in accordance with a gate horizontal grid, based
in no small part on actual teardown imagery of the Exynos 7420 showing linear, parallel
arrangement to these structures. See, e.g., JX-0215 at *9. This limitation, however, requires not
actual structures, but layout shapes, positioned in accordance with a gate horizontal grid. The
record supports finding that such layout shapes exist and are so positioned. Dr. Subramanian
conceded that the DI Products would be manufactured in accordance with the design rules
concerning layout of gate structures. Hr’g Tr. at 937:20-939:5. Those rules are contained in CX-
0727C and CX-0726C, and Dr. Foty testified as to how these documents refer to
163
. CX-1144C at Q/A 107, 2657, 2769-2778; see CX-0727C at -38, -133. Thus, it is
more likely than not the limitation is met, despite the absence of actual layout files in the record.
To the extent the Staff argues the limitation is not met because no further specificity on the “grid”
is provided in the design rules, or for the lack of an actual, observable projection of a “grid,” those
reasons are not persuasive, as discussed in the context of infringement under the 334 patent.
ii. Gate electrode feature layout shapes used as an input to a
lithography process
Second, the Staff, but not Respondents, disputes whether “gate electrode feature layout
shapes used as an input to a lithography process” is met by the DI Products. SIB at 110-111.
Tela contends “Samsung’s 14LPP and 14LPC design manuals specify the
which are used as an input to a lithography process to
form gate electrode features.” CIB at 135-136 (citing CX-1144C at Q/A 2766-2770; CX-0727C
at *38, 133; CX-0726C at *46, 162). Tela claims a teardown analysis also shows practice of the
limitation (see id. at 136; CRB at 71 (“[M]asks are not necessary to show infringement.”)), and
Respondents’ expert, Dr. Subramanian, “had no doubt that the Exynos 7420 chip would be
manufactured from a layout designed in accordance with Samsung design rules” (CIB at 136
(citing Hr’g Tr. at 937:20-939:5)).
The Staff criticizes Tela for “offer[ing] no direct evidence regarding Samsung’s design
layout or SAS’s mask shapes that are used during Samsung’s lithography process versus the
structures in the final product.” SIB at 110. Thus, according to Staff, there is insufficient evidence
to show practice of the claim. See id. at 110-111 (citing RX-0014C at Q/A 606-612); SRB at 42-
43.
The limitation is more likely than not practiced by the DI Products, albeit through
circumstantial evidence. As determined above, the evidence supports finding that “gate electrode
164
feature layout shapes” are used by Samsung in the creation of the DI Products, and are positioned
in accordance with a grid. Thus, the issue becomes whether these “gate electrode layout shapes”
are also used as an input to a lithography process.
As explained in the infringement discussion above, “used as an input” encompasses Intel’s
use of design layout shapes as a starting point to create backbone and cut mask shapes for
lithography, where that lithography is just the first step in a process called spacer-defined double
(or quad) patterning. See, e.g., RX-0008C at Q/A 31-32, 99-115. Dr. Subramanian considered
teardown analyses and Samsung’s design rules to conclude that Samsung utilizes the same process.
See RX-0014C at Q/A 598-606 (“It is my opinion that Samsung likely uses SADP to form its metal
gates. In any event, Dr. Foty has not provided evidence to refute that it does.”). Dr. Foty, also
considering Samsung’s design rules, points to as evidence
that gate electrode feature layout shapes are created and then used in a lithography process. CX-
1144C at Q/A 2769-2770. Thus, on balance, a preponderance of the evidence supports finding the
DI Products meet this limitation, essentially in the same way as the Accused Products.
iii. Diffusion Regions
Third, as with the 334 patent, Respondents and Staff dispute that the DI Products have any
“diffusion region[s].” RIB at 145; SIB at 111-112. Tela again points to the in
Samsung’s LPP and LPC design manuals, as evidence of this claim element. CIB at 139-140;
CRB at 71-72. As determined above, the DI Products’ epitaxially grown sources and drains are
new material and therefore not literally “substrate” as required by the construction for “diffusion
region.” Again, though, Tela alleges the limitation is practiced under the doctrine of equivalents,
which, again, the record supports. CRB at 71-72 (citing CRB at 19-28). Thus, the limitation is
practiced.
165
iv. Formed in part utilizing a corresponding diffusion region
layout shape as an input to a lithography process
Fourth, Respondents and Staff contend that, should the DI Products be found to contain
“diffusion region[s],” they are not “formed in part utilizing a corresponding diffusion region layout
shape as an input to a lithography process.” RIB at 145-148; SIB at 111-112.
For this limitation, Tela contends the in the DI Products, is “formed in part
based on corresponding diffusion layout shapes in, at least, a GDSII file that is used as an input to
a lithography process.” CIB at 140 (citing CX-1144C at Q/A 2931-2936; CX-0727C at *37, 138,
141; CX-0726C at *46, 168, 171); see CRB at 72.
In opposition, Respondents again note the lack of discovery from non-party Samsung and
state “the record does not contain any layout files for Samsung chips.” RIB at 145 (citing RX-
0014C at Q/A 616); RRB at 80 (“the ‘GDSII file’ Tela references is purely hypothetical; there is
no Samsung GDSII file in the record.”). Thus, according to Respondents, “[t]here is no evidence
of which layout shapes, if any, are utilized as an input to lithography,” and Tela cannot meet its
burden. RIB at 146; see RRB at 80-81. Respondents also note that the acknowledged epitaxially
grown source and drain regions are “fundamentally non-lithographic.’ RIB at 146 (citing RX-
0014C at Q/A 619); see generally RIB at 146-148. The Staff agrees with this position. SIB at
111-112; SRB at 43-44.
The limitation is not practiced given the fact, which Respondents allege and Tela does not
dispute, that sources and drains are fundamentally non-lithographic. Indeed,
Tela has offered no explanation of how lithography plays a role, even “in part,” in source and drain
creation. Thus, in contrast with gate electrode features, which do involve lithography, there can
be no diffusion regions “formed in part utilizing a corresponding diffusion region layout shape as
an input to a lithography process.”
166
v. Substantially rectangular shape
Fifth, Respondents and Staff dispute that the DI Products contain “diffusion region layout
shapes” that are “substantially rectangular.” RIB at 145; SIB at 111-112.
Tela contends the of the DI Products have corresponding diffusion layout
shapes within, “at least, a ” CIB at 140. Tela further contends these are
rectangular, Id. (citing CX-1144C at Q/A 2931-2946; CX-
0727C at *37, 138, 141; CX-0726C at *46, 168, 171); CRB at 72.
Tela has not sufficiently shown a rectangular shape for these layout shapes. Given the
absence of actual layout files, the shape of “each diffusion region” for “each transistor” within the
overall “region of the semiconductor chip” in satisfaction of the claim (see 523 patent at cl. 27)
cannot be drawn from brief imagery on the cited pages of Samsung’s LPP and LPC design rules
(CX-0727C at *37, 138, 141; CX-0726C at *46, 168, 171; see RIB at 146, 147 (citing RX-0014C
at Q/A 618; CX-1144C at Q/A 2934)). Therefore, this limitation is not met by the DI Products.
b. Claim 28
For reference, claim 28 of the 523 patent requires:
28. [28a] A semiconductor chip, comprising: gate electrode features formed
within a region of the semiconductor chip,
[28b] the gate electrode features formed in part based on corresponding gate
electrode feature layout shapes used as an input to a lithography process,
[28c] the gate electrode feature layout shapes positioned in accordance with
a gate horizontal grid that includes a number of gate gridlines, wherein
adjacent gate gridlines are separated from each other by a gate pitch,
[28d] each gate electrode feature layout shape in the region having a
substantially rectangular shape and positioned to extend lengthwise in a y-
direction in a substantially centered manner along an associated gate
gridline,
[28e] wherein each gate gridline has at least one gate electrode feature
layout shape positioned thereon,
167
[28f] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form
a gate electrode of a transistor of a second transistor type,
[28g] wherein at least one gate electrode feature layout shape within the
region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of the second transistor type and does not
form a gate electrode of a transistor of the first transistor type;
[28h] a number of gate contact structures formed within the region of the
semiconductor chip, the gate contact structures formed in part utilizing
corresponding gate contact structure layout shapes as an input to a
lithography process, wherein each of at least six gate electrode features
within the region has a respective top surface in physical and electrical
contact with a corresponding gate contact structure formed at least in part
from a gate contact structure layout shape having a substantially rectangular
shape,
[28i] wherein each gate contact structure is centered in an x-direction on the
gate electrode feature with which it physical contacts,
[28j] wherein each gate contact structure layout shape that has the
substantially rectangular shape has a corresponding length greater than or
equal to a corresponding width and is oriented to have its corresponding
length extend in the x-direction, wherein each of the number of gate contact
structures is in physical contact with only one of any of the gate electrode
features; and
[28k] a first-metal layer formed above top surfaces of the gate electrode
features within the region of the semiconductor chip, the first-metal layer
positioned first in a stack of metal layers counting upward from top surfaces
of the gate electrode features, the first-metal layer separated from the top
surfaces of the gate electrode features by at least one insulator material,
[28l] the first-metal layer including at least two first-metal structures formed
in part based on corresponding first-metal structure layout shapes used as
an input to a lithography process, the at least two first-metal structures
forming portions of one or more electrical connections within the region of
the semiconductor chip,
[28m] wherein each transistor within the region is formed in part by a
corresponding diffusion region, each diffusion region formed in part
utilizing a corresponding diffusion region layout shape as an input to a
lithography process, wherein each diffusion region that forms part of any
transistor within the region is formed at least in part by a corresponding
diffusion region layout shape that has a substantially rectangular shape.
168
523 patent at cl. 28 (annotated). As noted above, Respondents do not explicitly challenge practice
of claim 28, but the Staff does, for all of the same reasons discussed with respect to claim 27: both
claims require “diffusion region,” “diffusion region layout shape . . . formed in part utilizing a
corresponding diffusion region layout shape as an input to a lithography process,” “a substantially
rectangular shape,” and “gate electrode feature layout shapes used as an input to a lithography
process.” See SIB at 110-112. As determined above, the DI Products do not practice claim 27.
Accordingly, the DI Products also have not been shown to practice claim 28.
F. Validity
Respondents and the Staff identify and discuss the following invalidity theories for the 523
patent:
Claims Theory
1- 11, 14-20, 25, 26, 27, 28 Rendered obvious under 35 U.S.C. § 103 by Kitabayashi (JX-
0267) and Intel 45nm Products and/or Maziasz and Hayes (RX-
0028)
27 Lack of written description 35 U.S.C. § 112, ¶ 1
See generally RIB at 148-171. The Staff agrees that claim 27 fails the written description
requirement, but does not assert obviousness as to any claim. See SIB at 112-114. Claim 27 is
pertinent only to the technical prong of domestic industry. See RIB at 148; SIB at 83-84. Thus,
because indefiniteness is not an asserted ground of invalidity of claim 27, the parties’ dispute over
that claim need not be resolved or otherwise addressed. Silicon Microphone Packages, Inv. No.
337-TA-695, Notice at 3. Thus, only the obviousness theory remains.
Before turning to the merits of that theory, the priority date of the 523 patent must be
established. The 523 patent claims priority to the 2006 Provisional Application and lacks the new
169
matter added to the 731 Application in 2015. See 523 patent at 1:13-28. And Respondents do not
allege that its asserted priority date is erroneous. See RIB at 149. Therefore, the 523 patent’s
presumptive priority date is March 9, 2006.
With this date in mind, Respondents assert three prior art references in an obviousness
combination: (1) Kitabayashi; (2) the Intel 45nm Products; and (3) the textbook entitled “Layout
Minimization of CMOS Cells” by Maziasz and Hayes. RX-0007C at Q/A 91. Tela does not
expressly dispute that Kitabayashi and Maziasz and Hayes are prior art. See CIB at 144.
Kitabayashi was filed as a U.S. Patent Application in 2004 and issued in 2007, and the earliest
date Tela asserts as the 523 patent’s conception date is October 22, 2005, so Kitabayashi is prior
art because it is a patent “granted on an application for patent by another filed in the United States
before the invention by the applicant for patent.” 35 U.S.C. § 102(e) (2002); RX-0267; see CIB
at 152. And Maziasz and Hayes was published in 1992, well before the 523 patent’s priority date.
See RX-0028.
Whether the Intel 45nm Products are prior art under the pre-AIA version of Section 102(g)
is a closer question, however, requiring more scrutiny than with the 334 patent. Tela contends
that the inventions claimed in the 523 patent were conceived no earlier than October 22, 2005,
and constructively reduced to practice by the filing of the 2006 Provisional Application on March
9, 2006. See CIB at 152-153. Respondents point to corroborated evidence that the Intel 45nm
Products were conceived no later than June 27, 2005, and contend they were actually reduced to
practice no later than January 25, 2006. See RIB at 78, 80; RX-0007C at Q/A 234. Therefore, the
question presented is whether the Intel 45nm Products were actually reduced to practice before
March 9, 2006, and not abandoned, suppressed, or concealed; if so, diligence is immaterial. See
Fox Group, 700 F.3d at 1304.
170
As noted, the Intel 45nm Products consist of the test chip and the Penryn chip. See RIB at
77. A press release and a Powerpoint presentation state that Intel successfully demonstrated its
test chip no later than June 27, 2005, and that it was “on track to manufacture chips with this
technology in 2007.” JX-0278; see JX-0275. Tela criticizes this evidence as uncorroborated. See
CIB at 83 (citing In re Garner, 508 F.3d 1376, 1381 (Fed. Cir. 2007)). Garner, however, applies
a “rule of reason” analysis, where “evidence of surrounding facts and circumstances independent
of information received from the inventor” may be sufficient to corroborate reduction to practice.
508 F.3d at 1380 (quoting Price v. Symsek, 988 F.3d 1187, 1195 (Fed. Cir. 1993)). Dr.
Subramanian itemizes the pertinent design documents, which were written between May 2004 and
October 2005. See RX-0007C at Q/A 242-253. The timeline of these documents is consistent
with what would be expected in the leadup to Intel’s public announcement of a “[f]ully functional”
test chip in January 2006, and the announcement itself was supported by photographs of a chip
and images of what even Tela describes as a portion of its gate layer. JX-0275 at 3; see JX-0278;
CIB at 83. To be sure, Respondents offer no test results to explicitly demonstrate that the test chip
“would work for its intended purpose,” but the Penryn chip’s commercial release in 2007 (as
predicted by Intel in its 2006 press release), combined with the other evidence offered, is adequate
to satisfy that standard under a “rule of reason.” Garner, 508 F.3d at 1380; see RX-0001C at Q/A
34 (“Intel completed testing” by January 2006 “to ensure that it worked for its intended purpose”),
58. And as with the 334 patent, the test chip was not conceived, reduced to practice, or otherwise
developed by the 523 patent’s inventors, so necessarily it was reduced to practice “by another.”
See CIB at 83 (citing Fox Group, 700 F.3d at 1304).
So the test chip was reduced to practice prior to March 9, 2006. Tela advances two
arguments as to why this does not establish the Intel 45nm Products as prior art. First, Tela argues
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that the test chip was intentionally abandoned, suppressed, or concealed. See CIB at 85; CRB at
52. Inasmuch as the test chip materially differs from the Penryn chip, the evidence supports this
argument, because, among other factors, the test chip itself was never commercialized and only
some of its “hundreds of [design] rules” have been publicly disclosed. See CX-1219C at 261-263.
But Respondents contend that the test chip and the Penryn chip, which was commercialized, were
part of the same research and development program—the test chip was, in essence, a “prototype”
that was “refined, perfected, and improved . . . for commercial release” as the Penryn chip. RIB
at 84; see RX-0007C at Q/A 220.
Other than a conclusory, nonspecific comment by Dr. Hook, Tela points to no evidence to
counter this contention. See CX-1231C at Q/A 1481 (“the M1 structures differ between the 45nm
SRAM test chip and the Penryn”). Respondents’ evidence supports it, however. See RX-0001C
at Q/A 37 (“The test chip was designed using the same design rules that we developed for the
commercial products.”); RX-0007C at Q/A 288 (Dr. Subramanian explains that his claim-by-
claim analysis relies on layout files from both the test chip and the Penryn chip). Dr. Auth testified
that it took approximately 1,000 Intel engineers about two years of full-time work “for the main
part of the project” of developing the Intel 45nm Products, so the delay here between actual
reduction to practice and commercialization would be expected. RX-0001C at Q/A 30; see id. at
Q/A 40 (“Penryn processors . . . are manufactured on Intel’s 45nm process technology”). Even
Dr. Hook, who opined that the Intel 45nm Products had not been adequately publicly disclosed,
generally treated the test chip and the Penryn chip as one product for purposes of his opinion.
Compare CX-1231C at Q/A 1217 (“there a lot of design rules” that were not discussed in a 2007
publication by an Intel engineer) with Q/A 1204 (Respondents “rel[y] on certain 45nm products
using Intel’s Penryn architecture,” and Dr. Hook “refer[s] to these as ‘Intel 45nm products’”).
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Therefore, the evidence shows that the Penryn chip was the commercial embodiment of
the test chip, rather than an entirely different invention, and that the 21-month period between
actual reduction to practice and public disclosure through commercialization resulted from
continuing research and development efforts, rather than intentional suppression and concealment.
In response, Tela presents its second argument for abandonment, suppression, or concealment:
that there was no enabling public disclosure. See CIB at 83-88. This argument differs from the
one advanced regarding the 334 patent, because the 334 patent covers product claims and the 523
patent allegedly covers product-by-process claims. See CIB at 144 n.12. And because prior art
status for product-by-process claims requires an enabling public disclosure, the argument goes,
mere commercialization, without an otherwise enabling disclosure, is insufficient to establish
prior art status. See id. at 144-45.
As a threshold matter of claim construction, all asserted claims depend from claim 1, which
claims a “semiconductor chip” comprising various structures “formed” under certain conditions.
E.g., 523 patent at 24:51 (“gate electrode features formed within a region”). Respondents and the
Staff seemingly agree that such language articulates a product-by-process claim, and so do I. See
RIB at 85; SIB at 104. In view of this construction, Tela asserts that “Federal Circuit case law
holds that the public disclosure necessary for prior art status to product-by-process claims under
§ 102(g) must be enabling.” CIB at 144. Tela candidly admits, however, that the “case law” to
which it refers is a dissenting opinion in Fox Group. See id. at 144 n.12. In fact, actual Federal
Circuit case law supports Respondents’ position: “a product-by-process claim can be anticipated
by a prior art product that does not adhere to the claim’s process limitation,” because “an old
product is not patentable even if it is made by a new process.” Amgen Inc. v. F. Hoffman-La
Roche Ltd, 580 F.3d 1340, 1370 (Fed. Cir. 2009). And as noted above with respect to the product
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claims of the 334 patent, commercialization of an allegedly prior art product is a “way to prove
public disclosure” under Section 102(g), even when that commercialization by itself is non-
enabling. Fox Group, 700 F.3d at 1306-07.
Therefore, the Intel 45nm Products, and the Penryn chip in particular, are prior art to the
523 patent.
As to the specifics of Respondents’ obviousness theory, Respondents argue the
obviousness of the 523 patent in view of two combinations of prior art: Kitabayashi/Intel 45 nm
Products and Kitabayashi/Intel 45 nm Products/Maziasz and Hayes. See RIB at 149. As with the
334 patent, the combination of Kitabayashi and the Intel 45 nm Products comes close to an
embodiment of claim 1 of the 523 patent. Claim 1 covers a semiconductor chip possessing, among
other elements, rectangular “gate electrode features” oriented in the y-direction and having a
particular pitch, rectangular “gate contact structures” oriented in the x-direction, “at least one
diffusion contact structure” positioned on a diffusion contact grid having a spacing equal to the
gate pitch, and rectangular “first-metal structures” oriented in the x-direction, all forming multiple
transistors. See generally 523 patent at 24:50-26:4. Most of these elements and the other elements
of claim 1 are found in the Intel 45 nm Products, as Dr. Subramanian opines. E.g., RX-0007C at
Q/A 612-13. One of his demonstrative exhibits, for instance, identifies gate electrode features
(green), gate contact structures (dark blue), and diffusion contact structures (pink) in the test chip.
See RDX-0009C at *169. In particular, and contrary to Tela’s contention, Dr. Subramanian
identifies multiple regions, generally by reference to cells shown in Intel 45 nm Product layout
files, that contain structures that form various logic circuits, including a multiplexer, an inverting
multiplexer, and a latch. See RX-0007C at Q/A 629-632; RIB at 149 n.42 (“the ‘region’ is the
entire cell”); cf. CIB at 147 (arguing that Respondents “present[] no evidence” of a region of the
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semiconductor chip containing features that form a logic circuit). And Kitabayashi discloses
rectangular first-metal structures all oriented in the same direction, with “grids” of multiple metal
layers, each oriented orthogonally to its vertical neighbors. See JX-0267 at 5:46-58, Fig. 9.
Thus, all the elements of claim 1 are seemingly disclosed in the prior art, with two
exceptions. The first is, as Tela notes, orienting the gate electrode features and first-metal
structures perpendicularly as in the 334 patent. 9 See CIB at 146. Respondents allege that this
element would be obvious to a skilled artisan on the same grounds presented before. See RIB at
149 (citing RX-0007C at Q/A 537-552 (discussing Intel 45nm Products), 152-153 (citing RX-
0007C at Q/A 606-610 (discussing Kitabayashi)). Dr. Subramanian similarly does not expand on
the purported motivation to include this arrangement in the prior art combination. RX-0007C at
Q/A 610 (“As I discussed earlier, in the combination of Kitabayashi and Intel’s 45nm Products, it
would have been obvious to run the wires in M1 to be perpendicular to the direction that poly
runs.”). Accordingly, for the same substantive reasons discussed above, Respondents have not
clearly and convincingly shown this limitation would be present in the Kitabayashi and Intel 45nm
Product combination.
The second exception is the “diffusion region.” Respondents contend that this element is
found in the Intel 45nm Products, to the extent “any source or drain is a ‘diffusion region’” under
Tela’s infringement theory. RIB at 154 (citing RX-0007C at Q/A 639-642)). But the sources and
drains in the Intel 45nm Products are and do not literally satisfy the “diffusion
9 Not all relevant claim terms were construed during the Markman proceeding, including, as
one example, “grid,” to the extent it means something beyond “projected gridlines” used during a
stage of chip manufacturing, and “diffusion contact structure.” Order No. 34 at 59. But Tela does
not separately dispute that the various components in the prior art fall within the scope of the
unconstrued claim terms, so there is no need to separately construe them. See Vanderlande Indus.
Nederland BV v. Int’l Trade Comm’n, 366 F.3d 1311, 1323 (Fed. Cir. 2004).
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region” limitation, as explained above. See RX-0007C at Q/A 641. This is the only argument
Respondents present regarding this limitation. See RIB at 154; RRB at 83-85. Although diffusion
regions like those disclosed in the 523 patent are likely readily found in the prior art, Respondents
make no effort to demonstrate that it would have been obvious to a skilled artisan to, say, substitute
such diffusion regions for the sources and drains found in the Intel 45 nm
Products, or otherwise demonstrate obviousness beyond generally alluding to “Tela’s
infringement theory.” RIB at 154. Respondents’ evidence regarding this limitation is not clear
and convincing, and accordingly, this limitation is also missing from the prior art relied upon.
Beyond these missing claim elements, Respondents have not presented a clear and
convincing case of obviousness in a procedural sense, either. Tela is correct that much of
Respondents’ detailed discussion for this patent appears in footnotes. See CRB at 73 n.17. Indeed,
some of Respondents’ most significant points appear in footnotes. E.g., RIB at 152 n.44 (disputing
Dr. Hook’s opinion regarding motivation to combine); RIB at 153 n.48 (arguing that a skilled
artisan would have known that “metal 1 can be run orthogonal to poly”). Although Ground Rule
13.1 contemplates the use of footnotes (because it holds that footnotes need not be double spaced),
it also states that a “reasonable page limit will be imposed,” with that limit determined on a “case-
by-case basis.” Order No. 2, Attachment A. The limit here was 200 pages for the opening brief,
as announced in open court at the end of the evidentiary hearing. See Hr’g Tr. at 1286:18-19. The
large amount of text, the pointedness of the arguments, and the volume of the evidence cited in
the relevant footnotes of Respondents’ opening brief may not violate the letter of Ground 13.1,
but they plainly violate the spirit, to Tela’s prejudice. See id. at 1288:12-18 (“I urge both sides,
be judicious about what you put in your post-hearing briefs”). So although the pertinent footnotes
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have not been “disregarded,” as Tela requests, they have generally been accorded less weight than
the main text. CRB at 73 n.17.
Accordingly, Respondents have not carried their burden of proving that claim 1 is invalid
as obvious, nor have they proven that the claims depending from it are invalid as obvious. Ortho-
McNeil, 520 F.3d at 1365.
VI. DOMESTIC INDUSTRY - ECONOMIC PRONG
In a patent-based complaint, a violation of Section 337 can be found “only if an industry
in the United States, relating to the articles protected by the patent ... concerned, exists or is in the
process of being established.” 19 U.S.C. § 1337(a)(2). Under Commission precedent, this
“domestic industry requirement” of Section 337 consists of an economic prong and a technical
prong. Stringed Instruments, Inv. No. 337-TA-586, Comm’n Op. at 12-14. The complainant bears
the burden of establishing that the domestic industry requirement is satisfied. See Certain Set-Top
Boxes and Components Thereof, Inv. No. 337-TA-454, Initial Determination at 294 (June 21,
2002) (not reviewed in relevant part).
The economic prong of the domestic industry requirement is defined in subsection (a)(3)
of Section 337 as follows:
(3) For purposes of paragraph (2), an industry in the United States shall be
considered to exist if there is in the United States, with respect to the articles
protected by the patent, copyright, trademark or mask work concerned --
(A) Significant investment in plant and equipment;
(B) Significant employment of labor or capital; or
(C) Substantial investment in its exploitation, including engineering,
research and development, or licensing.
19 U.S.C. § 1337(a)(3). The economic prong of the domestic industry requirement is satisfied by
meeting the criteria of any one of the three factors listed above. Importantly, the Commission has
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clarified that investments in plant and equipment, labor, and capital that may fairly be considered
investments in research and development are eligible for consideration under subsections (A) and
(B), in addition to subsection (C). See Solid State Storage Drives, Comm’n Op. at 14.
Tela contends the economic prong is met under subsections (A) and (B) through the
domestic activities of its licensee SAS. In its opening brief, Tela explains it owns the Asserted
Patents and entered into a license with Samsung Electronics Co., Ltd. (“Samsung”) in 2016 which
permitted Samsung and its affiliates, such as SAS, to practice the Asserted Patents. CIB at 155-
156 (citing JX-0008; JX-0010; CX-1148C at Q/A 6-21; JX-0170C). No party disputes this
ownership or the status of SAS as a licensee. See generally RIB; RRB; SIB; SRB.
As determined above, Tela has not shown the technical prong of domestic industry is met.
Nevertheless, to aid the Commission’s analysis, Tela’s claims of economic prong domestic
industry are evaluated below; and for the reasons provided, Tela has not shown “significant”
investment in satisfaction of the statute under either subsection (A) or (B). 19 U.S.C. § 1337
(a)(3)(A), (B).
A. Qualifying Expenditures
As noted above in the discussion of procedural history, and prior to the evidentiary hearing,
Tela filed a motion for summary determination that it satisfied the economic prong of domestic
industry. That motion was granted-in-part with Order No. 38, which, while not finding the matter
conclusively established, did establish the qualifying expenditures from Tela’s licensee, SAS,
which manufactures the DI Products within the United States. Those expenditures, repeated in
Tela’s post-hearing briefing with small changes to Group 3 amounts (see CIB at 161 n.17), are as
follows:
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(id. at 160-161; see Order No. 38 at 13). For ease of reference, and as mentioned above, the groups
1-3 refer to the following overlapping sets of products:
Tela’s Economic Prong Groups
Group 1 (7420)
Group 2 Group 1 +
Group 3 Group 1 + Group 2 +
CIB at 160; see RIB at 172-173. Accordingly, Tela contends “[i]n light of these findings, the only
remaining issue for the ALJ to decide is whether these allocated investments are significant.” Id.
at 154. The Staff’s discussion of economic prong reflects the same position. See SIB at 116-122.
Respondents and the Staff, on the other hand, do not immediately abandon a contest over
Tela’s claimed investment amounts. Rather they argue that SAS effectively last produced Group
1 wafers in July 2018 (see RIB at 173-174; SIB at 117) and Group 2 wafers in December 2018
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(see RIB at 174; SIB at 118), meaning that there was no investment in those products at the time
of Tela’s original complaint (December 2018) or amended complaint (February 2019) (see RIB at
174-175; SIB at 118).
Respondents reason that if this initial determination finds that Group 2 or Group 3 have not
been shown to practice the Asserted Patents (as the contrary had been assumed in Order No. 38),
that must mean there are no current “qualifying activities” to enable consideration of any “past”
Group 1 investment, regardless of whether Group 1 satisfies the technical prong:
As Order No. 38 recognized, past expenditures could be considered, “so
long as those investments pertain to the complainant’s industry with respect
to articles protected by the asserted IP rights and the complainant is
continuing to make qualifying investments at the time the complaint is
filed.” Order No. 38 at 6-7 (quotes and citation omitted) (emphasis added).
While the ALJ noted that “qualifying investments continue to be made for
the Group 3 products” (id. at 7), products can form the basis of a
“qualifying” activity only if they practice the asserted patents. See Certain
Television Sets, Television Receivers, Television Tuners, and Components
Thereof, Inv. No. 337-TA-910, 2015 WL 6755093, Comm’n Op., at *39;
Certain Subsea Telecommunications Sys. and Components Thereof, Inv.
No. 337-TA-1098, Initial Determination at 70 (U.S.I.T.C. Apr. 26, 2019)
(qualifying activity must be tied to patent-practicing article). With respect
to Group 3, because Tela has not provided any evidence that the unique
(non-Exynos 7420) products in Group 3 practice the Asserted Patents, any
continuing activities for those products are irrelevant, and SAS’s cessation
of activities for the Group 1 and 2 products should end the domestic industry
inquiry.
Id. at 175; see RRB at 89.
As determined above, Tela has indeed failed to show practice of the Asserted Patents by
the Exynos 7420 on the merits, and by the other DI Products through assertions of
representativeness. In this way, domestic industry cannot be found. Assuming nonetheless that
the Exynos 7420 does practice a claim of an Asserted Patent, Respondents’ argument regarding
continuing qualifying activities should be addressed.
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Respondents’ argument is not persuasive. As shown in their demonstrative below, the
Group 1 products had been produced within one year of either Tela’s original or amended
complaints:
RIB at 174; RDX-0025C at *1; see CIB at 164 (noting “171 wafers represent thousands of
Exynos 7420 processors”). Also as shown, an amount of Exynos 7420 products were produced
after the filing of the complaint, between April and August 2019. See CRB at 81 (citing CX-
1597C). Considering the technology involved and required preparation for manufacture, the
Exynos 7420 cannot be deemed a “discontinued” product. Respondents would have me ignore
this 2019 production entirely and reach the opposite conclusion under Certain Thermoplastic-
Encapsulated Electric Motors, Components Thereof, and Products and Vehicles Containing Same
II, Inv. No. 337-TA-1073 (see RIB at 176), but that investigation concerned whether post-
complaint expenditures could be considered in assessing “significant” investment. Comm’n Op.
at 6-8 (Aug. 12, 2019). Here, the post-complaint activity is only considered to show the product
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is not discontinued, and it is not incorporated into the investment amounts determined in Order
No. 38 and evaluated below. See, e.g., Certain Magnetic Data Storage Tapes and Cartridges
Containing the Same, Inv. No. 337-TA-1012, Comm’n Op. at 112-113 (Apr. 2, 2018) (“Magnetic
Data Storage”).
Moreover, because the Exynos 7420 was not discontinued at the time of Tela’s complaint,
it is not reasonable to compare SAS to the complainant in Certain Television Sets, that had shifted
its business model and ceased all of its qualifying domestic activity six months before filing its
complaint. Inv. No. 337-TA-910, Comm’n Op. at 59 (Oct. 30, 2015). As the Commission in that
investigation explained, “[w]hat is at issue in this investigation is not merely a decline in an ailing
business or discontinued products, but the lack of evidence that a cognizable domestic industry
exists at the time the complaint was filed. . . . Its U.S. business shifted toward patent monetization
and away from any research and development, or engineering related to its tuner products.” Id. at
74. By contrast, the record here shows that SAS’s plant, equipment, labor and capital which
created the Exynos 7420 products continued to function through the date of the complaint. To the
extent Respondents and Staff argue for a rule that eliminates consideration of any investment older
than six months when there is no investment during the same month, week, or day as the filing of
the complaint (see RRB at 89 (“Because SAS did not produce any Group 1 wafers at the time of
Tela’s complaint, no domestic industry in those products existed, and the inquiry should end there.
See [Certain Television Sets].”); SIB at 118), such a rule is not supported by the cited precedent
(see RIB at 175; RRB at 89; SIB at 118).
Accordingly, the investment amounts listed for the Group 1 products in Order No. 38, and
fairly adjusted by Tela without meaningful dispute (see RRB at 88; SRB at 46), are analyzed for
significance.
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B. “Significant” or “Substantial”
The next step in the evaluation of domestic industry is to determine if the investment
amounts identified above are “significant,” as in subsections (A) and (B). The most recent
precedential decision by the Court of Appeals for the Federal Circuit addressing this determination
is Lelo, which restated law applicable to a number of issues surrounding the economic prong of
domestic industry. See 786 F.3d at 883-85. In particular, the Federal Circuit held that the statutory
terms “‘significant’ and ‘substantial’ refer to an increase in quantity, or to a benchmark in
numbers” and “[a]n ‘investment in plant and equipment’ therefore is characterized quantitatively,
i.e., by the amount of money invested in the plant and equipment.” Id. at 883. Continuing, the
Federal Circuit held “[a]ll of the foregoing requires a quantitative analysis in order to determine
whether there is a ‘significant’ increase or attribution by virtue of the claimant’s asserted
commercial activity in the United States.” Id. In short, “[q]ualitative factors cannot compensate
for quantitative data that indicate insignificant investment and employment.” Id. at 885. The
Commission has since made clear that some sort of comparative analysis must be made before
significant or substantial can be found. See, e.g., Certain Gas Spring Nailer Products and
Components Thereof, Inv. No. 337-TA-1082, Notice of Comm’n Determination at 3 (Dec. 12,
2019) (“Gas Spring Nailers”); Certain Carburetors and Products Containing Such Carburetors,
Inv. No. 337-TA-1123, Comm’n Op. at 17-19 (Oct. 28, 2019) (“Carburetors”).
As to the Group 1, (Exynos 7420) product, Tela points to a number of
considerations: the asserted domestic activity is the actual manufacture of the “billions of
transistors and other components that enable the logic functions,” which is qualitatively significant
(see CIB at 166); that manufacture, regardless of the number of wafers made, requires enormous
up-front investment in space and equipment (see id. at 167; id. at 167 n.20 (citing Magnetic Data
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Storage, Inv. No. 337-TA-1012, Comm’n Op. at 115)); that manufacture, considered “front-end”
processing, is generally quantitatively significant compared to the overseas, “back-end” processing
(see id. at 167-170); the claimed labor and depreciation investment is quantitatively significant
compared to the cost of the raw materials used by SAS in manufacturing, in a value-added context
(see id. at 170-171); the value of the sold wafer as compared to raw material cost is quantitatively
significant (see id. at 171-172); the scope of the Asserted Patents’ claims—that is, the physical
implementation of integrated circuit designs—is commensurate with the scope of the work
performed by SAS (see id. at 172-173); SAS is a quantitatively significant investor in U.S.
semiconductor fabrication as compared to the rest of the industry (see id. at 173-174); and the
claimed investment is quantitatively significant as compared to SAS’s revenue per sold wafer (see
id. at 175-176).
In its reply brief, Tela contends “[a]t base, Respondents and Staff’s only argument is that
SAS’s allocated investments in Groups 1 and 2 are too small.” CRB at 82. This is in error, Tela
argues, because the Commission has made clear there is no minimum monetary expenditure to
satisfy the domestic industry requirement. See id. at 82-83 (citing Stringed Instruments, Inv. No.
337-TA-586, Comm’n Op. at 25-26; Carburetors, Inv. No. 337-TA-1123, Comm’n Op. at 27).
Tela further observes that the parties’ positions on the Group 3 products reveals their application
of a minimum investment:
That Respondents and Staff contest the significance of the investments in
Groups 1 and 2 – but not Group 3 – demonstrates that they are applying a
minimum threshold. The fabrication activities and related expenses are
relatively the same for all of the Exynos Products, as indicated by the fact
that SAS tracks its costs per wafer at the node level (e.g., 14nm) and not by
individual products. (CX-1145C (Greene) at Q/A 171-175 (showing that on
average it costs SAS to fabricate any 14nm wafer).) Thus, the
fabrication activities and the per-wafer costs between the three groups, all
of which are 14nm Exynos mobile processors, are relatively the same.
Group 3, however, contains more models and therefore the absolute value
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of the allocated Group 3 investments is larger than those of Groups 1 and 2
because the same activities are applied across a greater volume of wafers.
A finding that only Group 3 is significant necessarily means that a minimum
threshold was applied, because significance only existed once the same
activities and costs were multiplied by a sufficient volume of wafers for the
aggregate allocated amount to cross some unspecified – and improper –
significance threshold.
Id. at 83-84. Tela reemphasizes its views that “domestic industry analysis is not whether the
investments are large or small in the absolute sense, but whether they are important to the articles,
which is the analysis Mr. Greene performed and Respondents and Staff ignore” (id. at 84 (citing
Hr’g Tr. at 537:11-16, 543:11-16)), and the massive production of products by SAS other than the
Exynos 7420 in 2018 is simply “not pertinent to the analysis” (id. at 85). Tela explains:
More importantly, the production volume percentages were just used to
quantitatively allocate SAS’s investments. (Tr. (Greene) at 511:24-512:4;
536:21-537:6.) Whether those investments are significant is a separate,
multi-faceted inquiry. If an allocation percentage was the measure of
significance, there would be no need perform any of the additional
evaluations the Commission regularly employs to put the relative value of
investments in context. See Certain Collapsible Sockets for Mobile
Electronic Devices and Components Thereof, Inv. No. 337-TA-1056,
Comm’n Op. at 20 n.13 (July 9, 2018) (significance cannot be determined
on the sales-based allocation percentage itself); Carburetors, Comm’n Op.
at 17-18; (Tr. (Greene) at 537:7-10). Respondents argue that Mr. Greene’s
statement that production of a single wafer could be significant is absurd.
(RIB at 173, 179.) Respondents cite no authority. Considering the
Commission evaluates significance of the investment and activities to the
articles, placed in the proper context – for example, that production of even
a single wafer requires millions of dollars of equipment and facility space,
and requires skilled technicians, and results in hundreds of valuable
processors – production of a single wafer very well could be significant.
(Tr. (Greene) at 543:24-545:8.) Regardless, Tela is not relying on a single
wafer so the testimony is irrelevant.
Id.
Respondents oppose a finding of significance. Respondents highlight that the Group 1
product, the Exynos 7420, indisputably made up just 0.02% of all wafers fabricated by SAS in
2018 and argue this cannot be “significant.” RIB at 176 (citing CDX-0014C at *18). Respondents
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criticize Tela for failing to take into account this minimal volume of wafers produced, and
characterize the claim of Tela’s expert, Mr. Greene, that “production of just one wafer would
qualify as ‘significant,’” as “self-evidently absurd.” See id. at 179 (citing Hr’g Tr. at 511:7-12,
535:8-16, 536:10-14). Respondents take the position that it is improper to ignore SAS’s
production of other, non-DI Products, because “a domestic industry must be ‘made in the context
of the complainant’s size.’” Id. at 181 (citing Certain Kinesiotherapy Devices and Components
Thereof, Inv. No. 337-TA-823, Comm’n Op. at 33 (July 12, 2013), rev’d on other grounds, Lelo,
786 F.3d 879); RRB at 89-92 (citing, inter alia, Carburetors, Inv. No. 337-TA-1123, Comm’n Op
at 17). As to Tela’s quantitative analysis, Respondents argue there is no evidence on “the
processors’ R&D, design, assembly, testing, and packaging—none of which is carried out
domestically by SAS, yet all of which contributes to the total cost of producing the processors
(with the relevant data presumably being available to Tela from its licensee)” (RRB at 92 (citing
Hr’g Tr. at 509:11-510:2, 522:16-525:25)), Tela’s use of Intel data as a proxy suffers from the
same problem, and there is no evidence to believe the analogy to Intel is appropriate (see id. at 92-
93 (citing Hr’g Tr. at 533:9-534:24)).
The Staff agrees with each of Respondents’ points for the Group 1 product. See SIB at
117-120. In particular, the Staff notes the labor associated with Group 1 is one half of one
employee (see SIB at 119 (citing RX-0011C at Q/A 140; Order No. 38 at 8)) and actual profits to
SAS from the sale of wafers to Samsung are only (SRB at 47 (citing CPB at 170-
173)). The Staff summarizes: “[a]ll of these numbers are quantitatively small, particularly for
large companies like SAS and Samsung . . . .” SRB at 47.
The domestic industry investments are not significant. Even accepting Tela’s principal
quantitative metric (i.e., SAS’s investments add 100% of the value to the product),
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amounts are not significant. See CRB at 82-84. While it is true the Commission made
clear in Stringed Instruments that “there is no minimum monetary expenditure that a complainant
must demonstrate to qualify as a domestic industry” (Inv. No. 337-TA-586, Comm’n Op. at 25),
it also explained “[w]e agree with the parties that the requirement for showing the existence of a
domestic industry will depend on the industry in question, and the complainant’s relative size” (id.
at 25-26). In that investigation, for example, a “substantial” or “significant” investment did not
exist with investment of $8500 representing, impliedly, a 100% domestic value-add. See id. at 26-
27.
Tela does little to explain why invested in plant and equipment and in
labor is not too small. Indeed, in a section entitled “The Semiconductor Fabrication Industry and
Marketplace,” Tela touts the domestic presence and spending of SAS as a whole, and not the
figures at issue. See CIB at 173-174; see also CRB at 88-89. Tela also
emphasizes the limited number of industry actors (CIB at 173 (“[O]nly a handful of companies are
able to operate 300mm wafer fabrication facilities in the U.S.”)), the millions of dollars required
in equipment and facilities required to start up semiconductor process fabrication (id. at 167 “These
machines can cost up to $100 million apiece.”), and SAS’s relative size (id. at 173 (“After Intel,
SAS is the largest major 14nm supplier in the U.S.”); id. at 174 (“[W]hile SAS is comparable to
GlobalFoundries in terms of facility size and employee headcount, SAS invested
in U.S. salaries and produced 14nm wafers in 2018.”).
This approach avoids the crucial question, which is whether in plant and
equipment and in labor can be considered “significant” in the contexts of the marketplace
and SAS itself. In fact, Tela’s approach only serves to emphasize the modesty of these amounts.
And that modesty is consistent with the fact that the Exynos 7420 is the processor for the Galaxy
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S6, Samsung’s flagship smartphone back in 2015—a phone which has since been replaced by
newer generations both in the marketplace and in SAS’s production facilities—so domestic
industry investment can be expected to be even more modest in the future. See CIB at 159-160
(showing investment levels across LPE, LPP, and LPC), 164 (describing Galaxy S6); CX-0629;
CX-1230; CX-0632; CX-0631; CX-0630; CX-0633. The Federal Circuit and the Commission
have associated modesty with insignificancy, an appropriate association here as well. Lelo, 786
F.3d at 885 (“The Commission determined that Standard Innovation's investment and employment
under prongs (A) and (B) were quantitatively ‘modest,’ Comm'n Op. at 34, which we take to mean
‘insignificant.’ . . . We agree with the Commission's finding that investment and employment under
prongs (A) and (B) were modest and insignificant.”); Certain Thermoplastic-Encapsulated
Electric Motors, Components Thereof, and Products and Vehicles Containing Same II, Inv. No.
337-TA-1073, Comm’n Op. at 14 (Aug. 12, 2019) (“IV’s investments are too modest to meet the
domestic industry requirement of section 337(a)(3)”) (“Electric Motors”); Electric Motors, Inv.
No. 337-TA-1073, Comm’n Op. at 17 (“IV has failed to show how these expenditures are
significant in any appropriate context, particularly in light of the alleged difficulty of making these
pumps.”). That there was a large up-front investment years ago changes nothing, because the
domestic industry presently devoted to the Exynos 7420 is virtually defunct, and even massive
investments cannot be allocated to domestic industry if they possess no nexus to a domestic
industry product. See, e.g. Certain Subsea Telecommunication Systems and Components Thereof,
Inv. No. 337-TA-1098, Comm’n Op. at 41 (Oct. 21, 2019) (“The Commission has found that
complainants have not satisfied the domestic industry requirement where the complainant failed
to allocate expenses to account for non-domestic industry products that do not practice the
patent.”).
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In sum, SAS’s commitment to producing semiconductors in the United States even though
“global capacity for fabrication has generally shifted to Asia” (CIB at 174) is commendable. The
record does not show, however, that the Exynos 7420 is a significant part of SAS’s plan; nor does
it show SAS’s investment of in plant and equipment and in labor can be
considered “significant” under the statute. Accordingly, Tela has not met the economic prong of
the domestic industry requirement even assuming the Exynos 7420 is found to practice a claim of
the Asserted Patents.
VII. CONCLUSIONS OF LAW
1. The Commission has in rem jurisdiction over the accused products, integrated
circuits and products containing same.
2. The importation or sale requirement of Section 337 is satisfied for all respondents.
3. Tela, through its licensee, has not been shown to practice any claims of U.S. Patent
No. 10,141,334.
4. The domestic industry requirement is not satisfied with respect to the 334 patent.
5. Tela, through its licensee, has not been shown to practice any claims of U.S. Patent
No. 10,186,523.
6. The domestic industry requirement is not satisfied with respect to the 523 patent.
7. Respondents directly infringe claims 1, 2, and 5 of the 334 patent.
8. Respondents directly infringe claims 1-11, 14-20, 25, and 26 of the 523 patent.
9. Claims 1, 2, and 5 of the 334 patent have been shown to be invalid under 35 U.S.C.
§ 102. No claims of the 334 patent have been shown to be invalid under 35 U.S.C.
§ 103.
10. Claims 1, 2, 5, and 15 of the 334 patent have been shown to be invalid under 35
U.S.C. § 112.
11. No claims of the 523 patent have been shown to be invalid under 35 U.S.C. § 103.
12. No claims of the 523 patent have been shown to be invalid under 35 U.S.C. § 112.
13. Tela is not contractually barred from enforcing the 334 patent against respondent
Intel or its customers.
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14. There is no violation of Section 337 with respect to the 334 patent.
15. There is no violation of Section 337 with respect to the 523 patent.
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VIII. RECOMMENDED DETERMINATION ON REMEDY AND BOND
The Commission’s Rules provide that subsequent to an initial determination on the
question of violation of section 337 of the Tariff Act of 1930, as amended, 19 U.S.C. § 1337, the
administrative law judge shall issue a recommended determination concerning the appropriate
remedy in the event that the Commission finds a violation of section 337, and the amount of bond
to be posted by respondent during Presidential review of the Commission action under section
337(j). See 19 C.F.R. § 210.42(a)(1)(ii).
The Commission has broad discretion in selecting the form, scope, and extent of the
remedy in a section 337 proceeding. Viscofan, S.A. v. Int’l Trade Comm’n, 787 F.2d 544, 548
(Fed. Cir. 1986). Under Section 337(d)(1), if the Commission determines as a result of an
investigation that there is a violation of section 337, the Commission is authorized to enter either
a limited or a general exclusion order. 19 U.S.C. § 1337(d)(1). A limited exclusion order instructs
the U.S. Customs and Border Protection (“CBP”) to exclude from entry all articles that are covered
by the patent at issue and that originate from a named respondent in the investigation. A general
exclusion order instructs the CBP to exclude from entry all articles that are covered by the patent
at issue, without regard to source. Certain Purple Protective Gloves, Inv. No. 337-TA-500,
Comm’n Op. at 5 (Dec. 22, 2004). Under section 337(f)(1), the Commission may issue a cease
and desist order in addition to, or instead of, an exclusion order. 19 U.S.C. § 1337(f)(1). The
Commission generally issues a cease and desist order directed to a domestic respondent when there
is a “commercially significant” amount of infringing, imported product in the United States that
could be sold, thereby undercutting the remedy provided by an exclusion order. See Certain
Crystalline Cefadroxil Monohydrate, Inv. No. 337-TA-293, USITC Pub. 2391, Comm’n Op. on
Remedy, the Public Interest and Bonding at 37-42 (June 1991); Certain Condensers, Parts Thereof
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and Prods. Containing Same, Including Air Conditioners for Automobiles, Inv. No. 337-TA-334
(Remand), Comm’n Op. at 26-28 (Sept. 10, 1997).
Additionally, during the 60-day period of Presidential review under 19 U.S.C. § 1337(j),
“articles directed to be excluded from entry under subsection (d) . . . shall . . . be entitled to entry
under bond prescribed by the Secretary in an amount determined by the Commission to be
sufficient to protect the complainant from any injury.” See 19 U.S.C. § 1337(j)(3). “The
Commission typically sets the bond based on the price differential between the imported infringing
product and the domestic industry article or based on a reasonable royalty. However, where the
available pricing or royalty information is inadequate, the bond may be set at one hundred (100)
percent of the entered value of the infringing product.” Certain Industrial Automation Systems
and Components Thereof Including Control Systems, Controllers, Visualization Hardware,
Motion and Motor Control Systems, Networking Equipment, Safety Devices, and Power Supplies,
Inv. No. 337-TA-1074, Comm’n Op. at 13 (Apr. 23, 2019) (“Automation Systems”) (public
version) (citation omitted).
A. Limited Exclusion Order
Should a violation be found, Tela argues “the Commission’s usual practice is to issue relief
extending to the boundaries of the Notice of Investigation to exclude any infringing products.”
CIB at 190 (citing Certain Erasable Programmable Read Only Memories, Components Thereof,
Prods. Containing Such Memories, and Processes for Making Such Memories, Inv. No. 337-TA-
276, Comm’n Op. at 9-11 (Aug. 1, 1991)). Thus, Tela contends a limited exclusion order should
issue against all of Respondents’ infringing products. Id. In relevant part, Tela opposes any
certification provisions because Respondents’ mentions of new processor products “are Intel 14nm
or smaller Tri-Gate integrated circuits . . . within the scope of the NOI and subject to exclusion.”
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CRB at 100. Tela suggests that Respondents should leverage the advisory opinion process for any
future products, and that they have not shown the need for warranty or repair exemptions. See id.
In its public interest discussion, Tela argues any delay on a remedy is not warranted, but if
implemented should be limited to six months—the same time Intel claimed in interrogatory
responses that it could design around the Asserted Patents. CRB at 95-96 (citing CX-0007C at
*1150; CX-1235C at Q/A 216-218, 221).
Respondents do not challenge that a limited exclusion should issue, but argue public
interest considerations warrant several adjustments, including: a delay of at least twelve months,
the order should not extend to Respondents’ downstream products, and applicability only to
products for which respondent Intel is the importer of record. RIB at 196-197; see RRB at 100.
As to the delay, Respondents claim it would take
RIB at 196-197
(citing CX-1220C at 253:12-19; CX-1223C at 137:17-138:6; RX-0002C at Q/A 165-169).
Respondents also contend it serves “to allow Respondents and other impacted companies time to
begin implementing substitute processors and/or moving manufacturing overseas.” RIB at 196;
RRB at 100. Additionally, Respondents argue the remedy should allow for: certification
provisions, Government exemptions under 19 U.S.C. § 1337(l), and service and repair exemptions.
See RIB at 197.
The Staff emphasizes that “[t]he Commission has ‘broad discretion in selecting the form,
scope and extent of the remedy.’” SIB at 123 (citing Viscofan, S.A. v. Int’l Trade Comm’n, 787
F.2d 544, 548 (Fed. Cir. 1986); Fuji Photo Film v. Int’l Trade Comm’n, 386 F.3d 1095, 1106-1107
(Fed. Cir. 2004)). The Staff does not support downstream product exemptions as described by
Respondents (id. at 124), or service, repair, and replacement exceptions (id. at 124-125
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(“Respondents also ask for a repair exemption, although they cite only scant evidence of repair
and maintenance activities.”)). The Staff does support including the Commission’s standard
certification provision (id. at 125) and a delay to the effective date by several months to alleviate
the impact on third parties (id. at 132). On this latter point, the Staff notes, as Tela did, that
“Respondents admit that a design-around could be completed in as little as six months.” Id. (citing
CX-0007C at *1150).
The record supports imposition of a limited exclusion order with a delay of 12 months and
a standard certification provision. Respondents’ consideration of EPROMs factors and their
requests for certification provisions and service and repair modifications are explained only
through an incorporation by reference of their pre-hearing brief, which violates Ground Rule 13.5.
See RIB at 197 (citing RPB at 393-396); Order No. 2; see generally RRB at 93-100. As such,
these arguments are not considered. The government exemption under 19 U.S.C. § 1337(l) is
included in exclusion orders as a matter of course and need not be discussed. As to service and
repair exceptions, no other party supports them, and I do not recommend they be included in any
exclusion orders.
As to a delay, should an exclusion order issue, Tela and the Staff largely draw upon
Respondents’ contentions in this investigation for their six-month figure, but the contentions state
a redesign would take at least 6 months. CX-0007C at *1150 (“Intel would likely need to change
the early stages or lower level of the wafer fabrication process to avoid the adjudicated scope of
Tela’s asserted patent claims. The lower level the modification, the longer the redesign will take,
because a low level modification has ripple effects for all subsequent levels of the fabrication
process. Thus, a redesign of Intel Accused Products would likely take at least 6 months to
complete.”)). It seems unlikely that designs could change, in ways acceptable to fabrication and
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performance needs, in that timeframe. That six-month figure also does not appear to take into
account the changes non-party customers would need to implement subsequent to the redesign, or
the time needed to switch processor suppliers. Credible testimony on this point supports
accommodating at least an additional six months. See CX-1220C at 253:12-257:7; CX-1223C at
137:14-139:9.
Finally, as to certification provisions, the Commission has instructed that “[c]ertification
provisions aid U.S. Customs and Border Protection (‘CBP’) in enforcing Commission orders but
‘do not mandate that CBP accept certification as proof that the articles in question are not covered’
by the limited exclusion order.” Certain Robotic Vacuum Cleaning Devices and Components
Thereof Such as Spare Parts, Inv. No. 337-TA-1057, Comm’n Op. at 55 (Feb. 1, 2019).
Additionally, “[t]he standard provision does not allow an importer to simply certify that it is not
violating the exclusion order. Rather, CBP only accepts a certification that the goods have been
previously determined by CBP or the Commission not to violate the exclusion order” and “it has
been Commission practice for the past several years to include certification provisions in its
exclusion orders to aid CBP.” See Road Milling Machines, Inv. No. 337-TA-1067, Comm’n Op.
at 15, 15 n. 5 (citations omitted). Respondents do not appear to argue for any non-standard
certification provision, so it is my recommendation that any limited exclusion order include the
Commission’s standard certification provision.
B. Cease and Desist Order
Should a violation be found, Tela argues cease and desist orders should issue because
“[e]ach Respondent stipulated that it maintains a commercially significant inventory of Accused
Products in the U.S.” CIB at 191 (citing JX-0017C; JX-0018C; JX-0019C; JX-0020C; JX-0021C;
CX-1145C at Q/A 233-278). Tela specifies that the orders should preclude activities including
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“(1) maintenance, warranty, and repair, (2) sale, including of any inventory, (3) sales and/or
marketing, and (4) importation.” Id.
Respondents generally apply their argument on exemptions and limitations to an exclusion
order to any issuing cease and desist orders. See RIB at 196-197; RRB at 100. The Staff supports
cease and desist orders should a violation be found, again noting the stipulations entered into by
each respondent. SIB at 126-127; SRB at 50. The Staff does, however, question how certain of
Tela’s public interest propositions comport with a cease and desist order that prevents Intel from
selling to third-parties for later importation. See SIB at 127; SRB art 49.
Complainants bear the burden on the issue of cease and desist orders. Certain Microfluidic
Devices, Inv. No. 337-TA-1068, Comm’n Op. at 23 (Jan. 10, 2020). Such orders “are generally
issued when, with respect to the imported infringing products, respondents maintain commercially
significant inventories in the United States or have significant domestic operations that could
undercut the remedy provided by an exclusion order.” Id. at 22-23 (citations omitted). Given the
stipulations referenced above, this inventory requirement is met and it is my recommendation that
cease and desist orders should issue against each respondent. It is also my recommendation that
the cease and desist orders be delayed for twelve months in parallel with the exclusion orders.
C. Bond
The Commission has held that “[t]he complainant bears the burden of establishing the need
for a bond” during the Presidential Review period. See Robotic Vacuums, Inv. No. 337-TA-1057,
Comm’n Op. at 68. Tela does not seek a bond. See CIB at 190-191; RIB at 196 (citing CPB at
386); SIB at 128. Therefore, it is my recommendation that, in the event of a violation, no bond
requirement should issue.
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D. Public Interest
As determined above, there has been no violation of section 337. Assuming a violation is
found, however, it is recommended that the remedial orders include: limited exclusion orders
directed to each respondent, including certification provisions and a twelve-month enforcement
delay; and cease-and-desist orders, also directed to each respondent and including twelve-month
enforcement delays. The remaining issue for this recommended determination is to identify the
effects which these orders would have upon the public interest and consider whether those effects
are so prejudicial as to justify the denial of any remedy. The Commission has explained:
Section 337 requires the Commission, upon finding a violation of section
337, to issue an LEO “unless, after considering the effect of such exclusion
upon the public health and welfare, competitive conditions in the United
States economy, the production of like or directly competitive articles in the
United States, and United States consumers, it finds that such articles should
not be excluded from entry.” 19 U.S.C. § 1337(d)(l). Similarly, the
Commission must consider these public interest factors before issuing a
CDO. 19 U.S.C. § 1337(f)(1).
Certain Electronic Nicotine Delivery Systems and Components Thereof, Inv. No. 337-TA-1139,
Comm’n Op. at 16 (May 5, 2020). The Respondents contend public interest factors should
preclude a remedy; the Staff does not. RIB at 183; see SIB at 132; CIB at 177-178. For the reasons
discussed below, it is not my recommendation that public interest considerations should preclude
the issuance of the recommended remedy.
1. Public Health and Welfare
As to public health and welfare, the record does not weigh one way or the other.
Respondents argue the orders would “exclude Intel microprocessors that supply over 95% of the
U.S. server market segment and large percentages of the U.S. workstation, supercomputer, and
personal computer market segments” leading to reduced output and employment in the U.S., slow
the pace of innovation, and disrupt other interests and industries. RIB at 191 (citing RX-0004C at
197
Q/A 94-97, 104-110). Specifically, Respondents predict a massive shortfall of x86 processors in
the U.S., with the domestic computer manufacturing industry reducing output by 82% and losing
200,000 jobs (id. at 191-192 (citing RX-0004C at Q/A 157-161)), with a loss of sales that would
cause Intel to cut its research budget (id. at 192 (citing RX-0004C at Q/A 44-48, 139; RX-0006C
at Q/A 128-130)). As to other interests, Respondents explain “[t]he Proposed Orders would
immediately deprive a broad number of U.S. industries, including healthcare, cloud computing,
advanced research, and education, of the cutting-edge technology they require.” RIB at 192 (citing
RX-0004C at Q/A 133-172; RX-0011C at Q/A 87-91; RX-0006C at Q/A 54-131)); see RIB at
192-193.
On this topic, only Respondents’ discussions of the healthcare, research, and education are
material, and Respondents have not explained with particularity why these sectors would be
harmed by the exclusion orders as opposed to generally observing that they use Accused Products
in support of their missions. See, e.g., RIB at 192-193 (citing Hr’g Tr. at 1040:3-6); Hr’g Tr. at
1039:20-1040:22 (“If those hospitals or those companies weren’t – didn’t have access to the latest
advances in technology, we wouldn’t be able to get down to the specific genome in a DNA strand
that allows you to target precision medicine for cancer. They wouldn’t be able to do some of the
research that they have been able to do around Alzheimer’s. They wouldn’t be able to do early
spinal cancer detection.”). The Commission has explained “[t]he relevant issue is not whether there
is a public health and welfare benefit provided by blood cholesterol testing generally, but rather
whether the exclusion of the Accused Products will negatively impact the public health and welfare.”
Certain Blood Cholesterol Testing Strips and Associated Systems Containing the Same, Inv. No.
337-TA-1116, Comm’n Op. at 34 (May 1, 2020).
This is a critical omission, because Tela’s expert, Dr. Akemann, persuasively testified that
there are acceptable substitute x86 processors from AMD in the same sectors discussed by
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Respondents. See RIB at 182-183 (citations omitted); CX-1146C at Q/A 267-302, 616-620; RRB
at 95 (“The accused Intel processors are x86 processors.”). Respondents’ response to substitution
by AMD is mainly that they are not drop-in replacements, that AMD is not compatible with some
of Intel’s unique features such as Optane memory, and that AMD chips generally “do not support
the ecosystem of Intel performance, power, and security features described above.” See RIB at
188. These incompatibilities, however, are neither unexpected nor insurmountable and otherwise
do not take away from the evidence showing AMD x86 processors could substitute even if they
have historically had low market share. See, e.g., CRB at 92-93, RX-0004C at Q/A 104-112.
Indeed, many of the non-Intel respondents sell computer products including or intended for AMD
processors, and which are comparable to their respective Accused Products (see, e.g., CIB at 181
(citing CX-0426; CX-0427), 182 (citing CX-0451; CX-0905; CX-0115; CX-0116; CX-1473; CX-
0969; CX-0215; CX-0585; CX-0214; CX-0353C; CX-0584; CX-0897; JX-0227; CX-0142; RX-
0966; RX-0967; RX-0968; RX-0969; RX-0976)), and given the prospective nature of the relief,
AMD’s rise in desktop, mobile, and server market share and technological competitiveness is
particularly relevant (see CIB at 179-180 (citing, inter alia, CX-1599 at *2-4; CX-1002; CX-0986;
CX-1600; RX-0966; CX-1011; RX-0987; JX-0316; JX-0323C; CX-1407; JX-0186C at *3; RX-
0805C at *2)).
As to slowed innovation (RIB at 192), this is limited to Intel and its own financial
constraints, and the national security complications Respondents warn of (id.) are greatly
ameliorated by 19 U.S.C. § 1337(l). Further, it is reasonable to assume at this stage that the impact
on public health and welfare from computer manufacturers, software designers, and end users
switching to AMD-based products (if even necessary given Respondents’ claims of redesign), and
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difficulties for AMD itself to ramp up production, would be lessened by a delay in enforcement of
the exclusion orders. See SIB at 131.
2. Competitive Conditions in the United States Economy
As to competitive conditions, this factor partially weighs in favor of precluding a remedy.
Respondents state “[t]he accused Intel processors are x86 processors” (RRB at 95) and Tela’s
expert, Dr. Akemann, acknowledges that only two companies have an x86 license—AMD and
Intel (CX-1146C at Q/A 292 (citing CX-0548C at -7978)). Dr. Akemann does not discuss the
possibility of new entrants to the x86 field (CX-1146C at Q/A 226, 267, 268, 275; see generally
CX-1146C at Q/A 303-602 (discussing non-AMD entities and no mention of x86)), which
logically results in a one-supplier market and weaker competition in the United States economy
for all x86 applications (see RIB at 194). Tela’s arguments regarding importers of record (CRB
at 89) and non-respondent, non-licensed, companies’ continuing ability to import substantial
quantities of Accused Products (CIB at 187) are not persuasive. A limited exclusion order would
prevent respondent Intel from importing but also selling for importation its Accused Products into
the United States. As the Intel Accused Products are essentially all packaged, or finished, overseas
(RIB at 189-190 (citing, inter alia, RX-0005C at Q/A 22-36, 58-73)), their entrance into the United
States would somehow require Intel to sell them on terms that prohibit this act, with the customer
then doing so anyway. This is an unrealistic scenario.
The record does show, however, that there are additional vendors and solutions for the
server, cloud, and supercomputing environments where x86 is not required, even if not preferred
at present. CIB at 183-186 (describing ARM-based processors, IBM processors, and Nvidia
GPUs); RRB at 96 (“[T]he examples Tela cites in its brief are examples where non-x86 processor
suppliers compete on the margins for business from consumers who are willing to buy non-x86-
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based products for a minority of applications.”). So competitive conditions in these sectors may
be less affected by the remedial orders.
3. Production of Like or Directly Competitive Articles in the United
States
The product of like or directly competitive articles in the United States does not weigh in
favor of precluding a remedy. As noted above, the reason the Commission has jurisdiction over
the Intel Accused Products is because they are fabricated in wafer form in the United States but
packaged, or finished, overseas (known as assembly, test, and packaging (ATM)) before
importation. RIB at 189-190. The record shows Intel has, at present, limited ATM operations
inside the United States, which process about units per year. RIB at 190 (citing CX-
1146C at Q/A 250; RX-0005C at Q/A 59, 61). Increasing these domestic operations, by any
amount, would avoid the remedial orders presently considered and increase the production of
articles in the United States. Further, and with respect to Respondents’ predicted loss of computer
manufacturing jobs (e.g., building/assembling computers with Intel processors) (see RIB at 184-
185), some portion of these can be expected to remain and shift to non-Intel products (such as
AMD) in the timeframe allowed by delayed enforcement of the exclusion orders. This has in fact
recently occurred due to market-based supply shortages. See CX-1600 (“In a bid to lower the
impact of Intel CPU shortages, ASUS and other makers of PCs and components have developed
more AMD-based products.”). Overall, it is likely there would be an increase in domestic
production of Intel-like articles.
4. Effect upon United States Consumers
The effect upon United States consumers slightly favors precluding a remedy. As
explained above, the competition for products in the x86 architecture space will be cut in half and
it is safe to assume prices for end users (i.e., consumers) will increase as a result. With the loss of
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Intel products, the non-x86 spaces will also likely see price increases. The evidence is limited as
to the extent of those increases, however. RIB at 196 (citing RX-0004C at Q/A 187-193; RX-
0011C at Q/A 115). Respondents’ arguments regarding OEMs and ODMs (see id.) as actors in
the supply chain of downstream devices are not relevant here, because they are not end users.
5. Conclusion
In conclusion, a weighing of the factors above does not support outright preclusion of any
remedy should a violation be found. The economic impact upon entities who incorporate the Intel
Accused Products into their own computer products, and are not named respondents to this
investigation, will have the benefit of a delayed enforcement to prepare their operations. Further,
it has not been shown that industries with ties to public health and welfare are particularly
dependent on the Accused Products, or that the Accused Products are uniquely suited for their
computing needs, other than the fact that Intel currently enjoys dominant market share.
Additionally, while there will undoubtedly be significantly decreased competition for x86
processor products, and lesser competition in others, this is a natural consequence of the right to
exclude under a patent—even in industries as critical as information technology. See Certain
Personal Data and Mobile Communications Devices and Related Software, Inv. No. 337-TA-710,
Comm’n Op. at 69, 83-84 (Dec. 29, 2011). Further, Tela claims, and Respondents do not dispute,
that Intel could theoretically employ the services of licensed semiconductor manufacturers TSMC
and Samsung to make Intel-designed products—thereby alleviating much of the supply disruption
which is the basis of Respondents’ public interest concerns. CIB at 187. Further still, to the extent
these remedial orders manage to devastate the public interest in the ways alleged by Respondents,
the Commission provides modification proceedings for this exact event, which will undoubtedly
be acted upon swiftly. 19 C.F.R. § 210.76 (“Whenever any person believes that changed
conditions of fact or law, or the public interest, require that an exclusion order, cease and desist
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order, or consent order be modified or set aside . . . the Commission make a determination that
the conditions which led to the issuance of an exclusion order, cease and desist order, or consent
order no longer exist”).
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IX. INITIAL DETERMINATION AND ORDER
Based on the foregoing, 10 it is my Initial Determination that there is no violation of Section
337 of the Tariff Act of 1930, as amended, 19 U.S.C. § 1337, in the importation into the United
States, the sale for importation, or the sale within the United States after importation of certain
integrated circuits and products containing the same, in connection with the asserted claims of U.S.
Patent Nos. 10,141,334 and 10,186,523.
Furthermore, it is my determination that a domestic industry in the United States that
practices or exploits the asserted patents does not exist.
This Initial Determination, together with the record of the hearing in this investigation
consisting of the transcript of the evidentiary hearing, with appropriate corrections as may
hereafter be ordered, and the exhibits accepted into evidence in this investigation, is hereby
certified to the Commission. 11
Pursuant to 19 C.F.R. § 210.42(h), this Initial Determination shall become the
determination of the Commission sixty (60) days after the date of service of the Initial
Determination, unless a party files a petition for review of the Initial Determination within twelve
(12) business days after service of the Initial Determination pursuant to 19 C.F.R. § 210.43(a) or
the Commission, pursuant to 19 C.F.R. § 210.44, orders on its own motion, a review of the Initial
Determination or certain issues therein. Any issue or argument not raised in a petition for review,
10 The failure to discuss any matter raised by the parties or any portion of the Record herein
does not indicate that said matter was not considered. Rather, any such matter(s) or portion(s) of
the Record has/have been determined to be irrelevant, immaterial or meritless. Arguments made
on brief which were otherwise unsupported by Record evidence or legal precedent have been
accorded no weight.
11 The pleadings of the parties filed with the Secretary need not be certified as they are already
in the Commission’s possession in accordance with Commission rules.
204
or response thereto, will be deemed to have been abandoned and may be disregarded by the
Commission in reviewing the Initial Determination pursuant to 19 C.F.R. § 210.43(b) and (c).
205
Confidentiality Notice:
This Initial Determination is being issued as confidential, and a public version will be
issued pursuant to Commission Rule 210.5(f). Within seven (7) days of the date of this Initial
Determination, the parties shall jointly submit: (1) a proposed public version of this opinion with
any proposed redactions bracketed in red; and (2) a written justification for any proposed
redactions specifically explaining why the piece of information sought to be redacted is
confidential and why disclosure of the information would be likely to cause substantial harm or
likely to have the effect of impairing the Commission’s ability to obtain such information as is
necessary to perform its statutory functions. 12
SO ORDERED.
________________________________
Cameron Elliot
Administrative Law Judge
12 Under Commission Rules 210.5 and 201.6(a), confidential business information includes:
information which concerns or relates to the trade secrets, processes, operations, style of works, or
apparatus, or to the production, sales, shipments, purchases, transfers, identification of customers,
inventories, or amount or source of any income, profits, losses, or expenditures of any person,
firm, partnership, corporation, or other organization, or other information of commercial value, the
disclosure of which is likely to have the effect of either impairing the Commission’s ability to
obtain such information as is necessary to perform its statutory functions, or causing substantial
harm to the competitive position of the person, firm, partnership, corporation, or other organization
from which the information was obtained, unless the Commission is required by law to disclose
such information. See 19 C.F.R. § 201.6(a). Thus, to constitute confidential business information
the disclosure of the information sought to be designated confidential must likely have the effect
of either: (1) impairing the Commission’s ability to obtain such information as is necessary to
perform its statutory functions; or (2) causing substantial harm to the competitive position of the
person, firm, partnership, corporation, or other organization from which the information was
obtained.
APPENDIX A
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
1272
14nm
BROADWELL
N/A
5Y10
935385
Intel® Core™ M-5Y10 Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3755U
936718
Intel® Celeron® Processor 3755U (2M Cache, 1.70 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
5Y70
937141
Intel® Core™ M-5Y70 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
N/A
937248
MBL [BROADWELL] Processor ULV 2.00 GHz, 3M Cache, FC-BGA14F, Tray, 15W, FH8065801620203
1272
14nm
BROADWELL
N/A
N/A
937249
MBL [BROADWELL] Processor ULV 2.00 GHz, 3M Cache, FC-BGA14F, Tray, 15W, FH8065801620403
1272
14nm
BROADWELL
INTEL(R) PENTIUM(R)
3805U
937255
Intel® Pentium® Processor 3805U (2M Cache, 1.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3755U
937258
Intel® Celeron® Processor 3755U (2M Cache, 1.70 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3205U
937260
Intel® Celeron® Processor 3205U (2M Cache, 1.50 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
5Y70
937262
Intel® Core™ M-5Y70 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
5Y10
937263
Intel® Core™ M-5Y10 Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
5Y10A
937264
Intel® Core™ M-5Y10a Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
5Y10
937418
Intel® Core™ M-5Y10 Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I7-5600U
937723
Intel® Core™ i7-5600U Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I5-5200U
937726
Intel® Core™ i5-5200U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3215U
937732
Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I3-5015U
937735
Intel® Core™ i3-5015U Processor (3M Cache, 2.10 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I5-5257U
937776
Intel® Core™ i5-5257U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
N/A
938695
MBL [SKYLAKE] Processor ULV 1.00 GHz, 4M Cache, FC-BGA14C, Tray, 20W, HE8066201922822
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
N/A
938728
DT [SKYLAKE] Processor 2.20 GHz, 8M Cache, FC-LGA14C, Tray, 80W, CM8066202070833
1272
14nm
BROADWELL
N/A
5Y10C
939310
Intel® Core™ M-5Y10c Processor (4M Cache, up to 2.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
5Y31
939314
Intel® Core™ M-5Y31 Processor (4M Cache, up to 2.40 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
5Y51
939327
Intel® Core™ M-5Y51 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
5Y71
939331
Intel® Core™ M-5Y71 Processor (4M Cache, up to 2.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I7-5600U
939359
Intel® Core™ i7-5600U Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I7-5500U
939360
Intel® Core™ i7-5500U Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I5-5300U
939361
Intel® Core™ i5-5300U Processor (3M Cache, up to 2.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I5-5200U
939362
Intel® Core™ i5-5200U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I3-5010U
939363
Intel® Core™ i3-5010U Processor (3M Cache, 2.10 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I3-5020U
939364
Intel® Core™ i3-5020U Processor (3M Cache, 2.20 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3765U
939366
Intel® Celeron® Processor 3765U (2M Cache, 1.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3215U
939367
Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I3-5005U
939368
Intel® Core™ i3-5005U Processor (3M Cache, 2.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I3-5015U
939369
Intel® Core™ i3-5015U Processor (3M Cache, 2.10 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
3825U
939519
Intel® Pentium® Processor 3825U (2M Cache, 1.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
3825U
939531
Intel® Pentium® Processor 3825U (2M Cache, 1.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I7-5650U
939655
Intel® Core™ i7-5650U Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I5-5350U
939656
Intel® Core™ i5-5350U Processor (3M Cache, up to 2.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I7-5550U
939658
Intel® Core™ i7-5550U Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I5-5250U
939660
Intel® Core™ i5-5250U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I7-5557U
939662
Intel® Core™ i7-5557U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I5-5287U
939670
Intel® Core™ i5-5287U Processor (3M Cache, up to 3.30 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I5-5257U
939672
Intel® Core™ i5-5257U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I3-5157U
939674
Intel® Core™ i3-5157U Processor (3M Cache, 2.50 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
N/A
I3-5005U
940707
Intel® Core™ i3-5005U Processor (3M Cache, 2.00 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
N/A
942317
MBL [SKYLAKE] Processor ULV 1.60 GHz, 4M Cache, FC-BGA14C, Tray, 15W, FJ8066201930823
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1540
942392
Intel® Xeon® Processor D-1540 (12M Cache, 2.00 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1520
942393
Intel® Xeon® Processor D-1520 (6M Cache, 2.20 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
I7-6500U
942759
Intel® Core™ i7-6500U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
I5-6300U
942760
Intel® Core™ i5-6300U Processor (3M Cache, up to 3.00 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
I5-6200U
942761
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
M3-6Y30
942802
Intel® Core™ m3-6Y30 Processor (4M Cache, up to 2.20 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
M7-6Y75
942808
Intel® Core™ m7-6Y75 Processor (4M Cache, up to 3.00 GHz) FC-BGA14C, Tray
INTEL
CDX-0003C.0001
CDX-0003C
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
M5-6Y57
942810
Intel® Core™ m5-6Y57 Processor (4M Cache, up to 2.80 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I5
I5-5675C
942888
Intel® Core™ i5-5675C Processor (4M Cache, up to 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400T
943084
Intel® Core™ i5-6400T Processor (6M Cache, up to 2.80 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700
943086
Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500
943093
Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400
943095
Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500T
943096
Intel® Core™ i5-6500T Processor (6M Cache, up to 3.10 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) PROCESSOR
I3-6100U
943140
Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
N/A
943307
SRV [KNIGHTS LANDING] Processor 1.20 GHz, 30M Cache, FC-LGA14B, Tray, 215W, HJ8066702268801
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-5775C
943363
Intel® Core™ i7-5775C Processor (6M Cache, up to 3.70 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I5
I5-5675R
943366
Intel® Core™ i5-5675R Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I5
I5-5575R
943367
Intel® Core™ i5-5575R Processor (4M Cache, up to 3.30 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-5775R
943368
Intel® Core™ i7-5775R Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1270LV4
943401
Intel® Xeon® Processor E3-1270L v4 (6M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1285LV4
943403
Intel® Xeon® Processor E3-1285L v4 (6M Cache, 3.40 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1265LV4
943404
Intel® Xeon® Processor E3-1265L v4 (6M Cache, 2.30 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1284LV4
943407
Intel® Xeon® Processor E3-1284L v4 (6M Cache, 2.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-5850HQ
943430
Intel® Core™ i7-5850HQ Processor (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-5950HQ
943431
Intel® Core™ i7-5950HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-5700HQ
943450
Intel® Core™ i7-5700HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700K
943463
Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400T
943464
Intel® Core™ i5-6400T Processor (6M Cache, up to 2.80 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700
943465
Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700T
943466
Intel® Core™ i7-6700T Processor (8M Cache, up to 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600K
943467
Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600
943468
Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500
943469
Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400
943470
Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500T
943471
Intel® Core™ i5-6500T Processor (6M Cache, up to 3.10 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600T
943472
Intel® Core™ i5-6600T Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400
943473
Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1280V5
943544
Intel® Xeon® Processor E3-1280 v5 (8M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1240V5
943545
Intel® Xeon® Processor E3-1240 v5 (8M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1230V5
943546
Intel® Xeon® Processor E3-1230 v5 (8M Cache, 3.40 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1270V5
943547
Intel® Xeon® Processor E3-1270 v5 (8M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1220V5
943548
Intel® Xeon® Processor E3-1220 v5 (8M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1260LV5
943549
Intel® Xeon® Processor E3-1260L v5 (8M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1225V5
943550
Intel® Xeon® Processor E3-1225 v5 (8M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1275V5
943551
Intel® Xeon® Processor E3-1275 v5 (8M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1245V5
943552
Intel® Xeon® Processor E3-1245 v5 (8M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1235LV5
943553
Intel® Xeon® Processor E3-1235L v5 (8M Cache, 2.00 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1240LV5
943554
Intel® Xeon® Processor E3-1240L v5 (8M Cache, 2.10 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6440HQ
943599
Intel® Core™ i5-6440HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1285V4
943660
Intel® Xeon® Processor E3-1285 v4 (6M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1270LV4
943661
Intel® Xeon® Processor E3-1270L v4 (6M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-5775C
943887
Boxed Intel® Core™ i7-5775C Processor (6M Cache, up to 3.70 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400
943907
Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400
943908
Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1541
943943
Intel® Xeon® Processor D-1541 (12M Cache, 2.10 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1548
943950
Intel® Xeon® Processor D-1548 (12M Cache, 2.00 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1528
943953
Intel® Xeon® Processor D-1528 (9M Cache, 1.90 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1541
944000
Intel® Xeon® Processor D-1541 (12M Cache, 2.10 GHz) FC-BGA14C, Tray
CDX-0003C.0002
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1521
944001
Intel® Xeon® Processor D-1521 (6M Cache, 2.40 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1531
944002
Intel® Xeon® Processor D-1531 (9M Cache, 2.20 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1539
944005
Intel® Xeon® Processor D-1539 (12M Cache, 1.60 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1548
944006
Intel® Xeon® Processor D-1548 (12M Cache, 2.00 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1527
944007
Intel® Xeon® Processor D-1527 (6M Cache, 2.20 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1528
944008
Intel® Xeon® Processor D-1528 (9M Cache, 1.90 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R) PENTIUM(R)
D1519
944009
Intel® Pentium® Processor D1519 (6M Cache, 1.50 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1518
944010
Intel® Xeon® Processor D-1518 (6M Cache, 2.20 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R) PENTIUM(R)
D1507
944011
Intel® Pentium® Processor D1507 (3M Cache, 1.20 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R) PENTIUM(R)
D1508
944012
Intel® Pentium® Processor D1508 (3M Cache, 2.20 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1529
944013
Intel® Xeon® Processor D-1529 (6M Cache, 1.30 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6820EQ
944028
Intel® Core™ i7-6820EQ Processor (8M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400
944035
Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6440EQ
944037
Intel® Core™ i5-6440EQ Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100E
944045
Intel® Core™ i3-6100E Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6822EQ
944047
Intel® Core™ i7-6822EQ Processor (8M Cache, up to 2.80 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6102E
944050
Intel® Core™ i3-6102E Processor (3M Cache, 1.90 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6442EQ
944051
Intel® Core™ i5-6442EQ Processor (6M Cache, up to 2.70 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1505LV5
944067
Intel® Xeon® Processor E3-1505L v5 (8M Cache, 2.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-5700EQ
944074
Intel® Core™ i7-5700EQ Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1278LV4
944075
Intel® Xeon® Processor E3-1278L v4 (6M Cache, 2.00 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-5850EQ
944076
Intel® Core™ i7-5850EQ Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1258LV4
944077
Intel® Xeon® Processor E3-1258L v4 (6M Cache, 1.80 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E3-1283LV4
944090
Intel® Xeon® Processor E3-1283L v4 (6M Cache, 2.90 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) M
M5-6Y57
944320
Intel® Core™ m5-6Y57 Processor (4M Cache, up to 2.80 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) M
M7-6Y75
944321
Intel® Core™ m7-6Y75 Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) M
M5-6Y54
944325
Intel® Core™ m5-6Y54 Processor (4M Cache, up to 2.70 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) M
M3-6Y30
944326
Intel® Core™ m3-6Y30 Processor (4M Cache, up to 2.20 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
4405Y
944330
Intel® Pentium® Processor 4405Y (2M Cache, 1.50 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100U
944334
Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
3855U
944335
Intel® Celeron® Processor 3855U (2M Cache, 1.60 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
3955U
944336
Intel® Celeron® Processor 3955U (2M Cache, 2.00 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
4405U
944337
Intel® Pentium® Processor 4405U (2M Cache, 2.10 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6500U
944339
Intel® Core™ i7-6500U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6300U
944340
Intel® Core™ i5-6300U Processor (3M Cache, up to 3.00 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6600U
944341
Intel® Core™ i7-6600U Processor (4M Cache, up to 3.40 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6820HK
944356
Intel® Core™ i7-6820HK Processor (8M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1535MV5
944365
Intel® Xeon® Processor E3-1535M v5 (8M Cache, 2.90 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1505MV5
944366
Intel® Xeon® Processor E3-1505M v5 (8M Cache, 2.80 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6300HQ
944367
Intel® Core™ i5-6300HQ Processor (6M Cache, up to 3.20 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700HQ
944368
Intel® Core™ i7-6700HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100H
944369
Intel® Core™ i3-6100H Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6440HQ
944370
Intel® Core™ i5-6440HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6920HQ
944371
Intel® Core™ i7-6920HQ Processor (8M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6820HQ
944372
Intel® Core™ i7-6820HQ Processor (8M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1537
944377
Intel® Xeon® Processor D-1537 (12M Cache, 1.70 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I5
I5-5675C
944383
Intel® Core™ i5-5675C Processor (4M Cache, up to 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700K
944458
Boxed Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700
944459
Boxed Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600K
944460
Boxed Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600
944461
Boxed Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C
CDX-0003C.0003
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500
944462
Boxed Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400
944464
Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700K
944469
Boxed Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700
944470
Boxed Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600K
944472
Boxed Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600
944473
Boxed Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500
944474
Boxed Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400
944475
Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, for China
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1537
944484
Intel® Xeon® Processor D-1537 (12M Cache, 1.70 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R) PENTIUM(R)
D1517
944485
Intel® Pentium® Processor D1517 (6M Cache, 1.60 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1240V5
944496
Boxed Intel® Xeon® Processor E3-1240 v5 (8M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1230V5
944497
Boxed Intel® Xeon® Processor E3-1230 v5 (8M Cache, 3.40 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1270V5
944498
Boxed Intel® Xeon® Processor E3-1270 v5 (8M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1275V5
944499
Boxed Intel® Xeon® Processor E3-1275 v5 (8M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1245V5
944500
Boxed Intel® Xeon® Processor E3-1245 v5 (8M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1220V5
944506
Boxed Intel® Xeon® Processor E3-1220 v5 (8M Cache, 3.00 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1225V5
944507
Boxed Intel® Xeon® Processor E3-1225 v5 (8M Cache, 3.30 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3900E
944534
Intel® Celeron® Processor G3900E (2M Cache, 2.40 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3902E
944537
Intel® Celeron® Processor G3902E (2M Cache, 1.60 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I5
I5-5675C
944548
Boxed Intel® Core™ i5-5675C Processor (4M Cache, up to 3.60 GHz) FC-LGA14C
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2695V4
944676
Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2696V4
944679
Intel® Xeon® Processor E5-2696 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6300
944894
Intel® Core™ i3-6300 Processor (4M Cache, 3.80 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6300T
944897
Intel® Core™ i3-6300T Processor (4M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100T
944899
Intel® Core™ i3-6100T Processor (3M Cache, 3.20 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100
944901
Intel® Core™ i3-6100 Processor (3M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400
944906
Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400T
944925
Intel® Pentium® Processor G4400T (3M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3900T
944927
Intel® Celeron® Processor G3900T (2M Cache, 2.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6260U
945073
Intel® Core™ i5-6260U Processor (4M Cache, up to 2.90 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6320
945192
Intel® Core™ i3-6320 Processor (4M Cache, 3.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6300
945193
Intel® Core™ i3-6300 Processor (4M Cache, 3.80 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6300T
945205
Intel® Core™ i3-6300T Processor (4M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100T
945206
Intel® Core™ i3-6100T Processor (3M Cache, 3.20 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100
945208
Intel® Core™ i3-6100 Processor (3M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4500
945269
Intel® Pentium® Processor G4500 (3M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4520
945298
Intel® Pentium® Processor G4520 (3M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400T
945362
Intel® Pentium® Processor G4400T (3M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4500T
945382
Intel® Pentium® Processor G4500T (3M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3900T
945383
Intel® Celeron® Processor G3900T (2M Cache, 2.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3900
945385
Intel® Celeron® Processor G3900 (2M Cache, 2.80 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3920
945387
Intel® Celeron® Processor G3920 (2M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
N/A
I5-5200U
945390
Intel® Core™ i5-5200U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2695V4
945399
Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2696V4
945449
Intel® Xeon® Processor E5-2696 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2695V4
945450
Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
N/A
945460
SRV [BROADWELL] Processor 2.10 GHz, 20M Cache, 8.000 GT/s Intel® QPI, FC-LGA14A, Tray, 85W, CM8066002032201
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6300
945908
Boxed Intel® Core™ i3-6300 Processor (4M Cache, 3.80 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6300T
945909
Boxed Intel® Core™ i3-6300T Processor (4M Cache, 3.30 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100T
945910
Boxed Intel® Core™ i3-6100T Processor (3M Cache, 3.20 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100
945911
Boxed Intel® Core™ i3-6100 Processor (3M Cache, 3.70 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3900
945912
Boxed Intel® Celeron® Processor G3900 (2M Cache, 2.80 GHz) FC-LGA14C
CDX-0003C.0004
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3920
945913
Boxed Intel® Celeron® Processor G3920 (2M Cache, 2.90 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6300
945914
Boxed Intel® Core™ i3-6300 Processor (4M Cache, 3.80 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100T
945917
Boxed Intel® Core™ i3-6100T Processor (3M Cache, 3.20 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100
945918
Boxed Intel® Core™ i3-6100 Processor (3M Cache, 3.70 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3900
945919
Boxed Intel® Celeron® Processor G3900 (2M Cache, 2.80 GHz) FC-LGA14C, for China
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2683V4
945949
Intel® Xeon® Processor E5-2683 v4 (40M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2698V4
945951
Intel® Xeon® Processor E5-2698 v4 (50M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400
946002
Boxed Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4500
946003
Boxed Intel® Pentium® Processor G4500 (3M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400
946004
Boxed Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4520
946006
Boxed Intel® Pentium® Processor G4520 (3M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400
946007
Boxed Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4500
946008
Boxed Intel® Pentium® Processor G4500 (3M Cache, 3.50 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400
946009
Boxed Intel® Pentium® Processor G4400 (3M Cache, 3.30 GHz) FC-LGA14C, for China
1272
14nm
BROADWELL
INTEL(R) PENTIUM(R)
D1509
946072
Intel® Pentium® Processor D1509 (3M Cache, 1.50 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6320
946089
Boxed Intel® Core™ i3-6320 Processor (4M Cache, 3.90 GHz) FC-LGA14C
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2690V4
946091
Intel® Xeon® Processor E5-2690 v4 (35M Cache, 2.60 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2660V4
946093
Intel® Xeon® Processor E5-2660 v4 (35M Cache, 2.00 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2680V4
946098
Intel® Xeon® Processor E5-2680 v4 (35M Cache, 2.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2650LV4
946099
Intel® Xeon® Processor E5-2650L v4 (35M Cache, 1.70 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2658V4
946107
Intel® Xeon® Processor E5-2658 v4 (35M Cache, 2.30 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6560U
946138
Intel® Core™ i7-6560U Processor (4M Cache, up to 3.20 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6260U
946143
Intel® Core™ i5-6260U Processor (4M Cache, up to 2.90 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6167U
946152
Intel® Core™ i3-6167U Processor (3M Cache, 2.70 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
946153
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6567U
946157
Intel® Core™ i7-6567U Processor (4M Cache, up to 3.60 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6287U
946159
Intel® Core™ i5-6287U Processor (4M Cache, up to 3.50 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6267U
946160
Intel® Core™ i5-6267U Processor (4M Cache, up to 3.30 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6660U
946161
Intel® Core™ i7-6660U Processor (4M Cache, up to 3.40 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6360U
946162
Intel® Core™ i5-6360U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6785R
946208
Intel® Core™ i7-6785R Processor (8M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2699V4
946675
Intel® Xeon® Processor E5-2699 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2683V4
946676
Intel® Xeon® Processor E5-2683 v4 (40M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2697V4
946678
Intel® Xeon® Processor E5-2697 v4 (45M Cache, 2.30 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2698V4
946679
Intel® Xeon® Processor E5-2698 v4 (50M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2676V4
946681
Intel® Xeon® Processor E5-2676 v4 (40M Cache, 2.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2697AV4
946684
Intel® Xeon® Processor E5-2697A v4 (40M Cache, 2.60 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2682V4
946687
Intel® Xeon® Processor E5-2682 v4 (40M Cache, 2.50 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2679V4
946688
Intel® Xeon® Processor E5-2679 v4 (50M Cache, 2.50 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2689V4
946690
Intel® Xeon® Processor E5-2689 v4 (25M Cache, 3.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2686V4
946691
Intel® Xeon® Processor E5-2686 v4 (45M Cache, 2.30 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6650U
946722
Intel® Core™ i7-6650U Processor (4M Cache, up to 3.40 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2673V4
946773
Intel® Xeon® Processor E5-2673 v4 (50M Cache, 2.30 GHz) FC-LGA14A, Tray
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8330
947028
Intel Atom® x5-Z8330 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2609V4
947112
Intel® Xeon® Processor E5-2609 v4 (20M Cache, 1.70 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2637V4
947115
Intel® Xeon® Processor E5-2637 v4 (15M Cache, 3.50 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2667V4
947117
Intel® Xeon® Processor E5-2667 v4 (25M Cache, 3.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1603V4
947135
Intel® Xeon® Processor E5-1603 v4 (10M Cache, 2.80 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700K
947200
Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400T
947201
Intel® Core™ i5-6400T Processor (6M Cache, up to 2.80 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700
947202
Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700T
947203
Intel® Core™ i7-6700T Processor (8M Cache, up to 3.60 GHz) FC-LGA14C, Tray
CDX-0003C.0005
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600K
947204
Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600
947205
Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500
947206
Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400
947207
Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500T
947208
Intel® Core™ i5-6500T Processor (6M Cache, up to 3.10 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600T
947209
Intel® Core™ i5-6600T Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1280V5
947224
Intel® Xeon® Processor E3-1280 v5 (8M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1240V5
947225
Intel® Xeon® Processor E3-1240 v5 (8M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1230V5
947228
Intel® Xeon® Processor E3-1230 v5 (8M Cache, 3.40 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1270V5
947229
Intel® Xeon® Processor E3-1270 v5 (8M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1220V5
947230
Intel® Xeon® Processor E3-1220 v5 (8M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1260LV5
947234
Intel® Xeon® Processor E3-1260L v5 (8M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1225V5
947247
Intel® Xeon® Processor E3-1225 v5 (8M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1275V5
947248
Intel® Xeon® Processor E3-1275 v5 (8M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1245V5
947249
Intel® Xeon® Processor E3-1245 v5 (8M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1235LV5
947250
Intel® Xeon® Processor E3-1235L v5 (8M Cache, 2.00 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1240LV5
947252
Intel® Xeon® Processor E3-1240L v5 (8M Cache, 2.10 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700TE
947253
Intel® Core™ i7-6700TE Processor (8M Cache, up to 3.40 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1268LV5
947254
Intel® Xeon® Processor E3-1268L v5 (8M Cache, 2.40 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500TE
947257
Intel® Core™ i5-6500TE Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100TE
947268
Intel® Core™ i3-6100TE Processor (4M Cache, 2.70 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
G4400TE
947270
Intel® Pentium® Processor G4400TE (3M Cache, 2.40 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3900TE
947271
Intel® Celeron® Processor G3900TE (2M Cache, 2.30 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1581
947370
Intel® Xeon® Processor D-1581 (24M Cache, 1.80 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1571
947371
Intel® Xeon® Processor D-1571 (24M Cache, 1.30 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1587
947372
Intel® Xeon® Processor D-1587 (24M Cache, 1.70 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1577
947373
Intel® Xeon® Processor D-1577 (24M Cache, 1.30 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1567
947374
Intel® Xeon® Processor D-1567 (18M Cache, 2.10 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1557
947375
Intel® Xeon® Processor D-1557 (18M Cache, 1.50 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1559
947376
Intel® Xeon® Processor D-1559 (18M Cache, 1.50 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1240V5
947516
Boxed Intel® Xeon® Processor E3-1240 v5 (8M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1230V5
947517
Boxed Intel® Xeon® Processor E3-1230 v5 (8M Cache, 3.40 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1270V5
947518
Boxed Intel® Xeon® Processor E3-1270 v5 (8M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1220V5
947519
Boxed Intel® Xeon® Processor E3-1220 v5 (8M Cache, 3.00 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1225V5
947521
Boxed Intel® Xeon® Processor E3-1225 v5 (8M Cache, 3.30 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1275V5
947522
Boxed Intel® Xeon® Processor E3-1275 v5 (8M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1245V5
947523
Boxed Intel® Xeon® Processor E3-1245 v5 (8M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400T
947546
Boxed Intel® Core™ i5-6400T Processor (6M Cache, up to 2.80 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700T
947547
Boxed Intel® Core™ i7-6700T Processor (8M Cache, up to 3.60 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500T
947548
Boxed Intel® Core™ i5-6500T Processor (6M Cache, up to 3.10 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600T
947549
Boxed Intel® Core™ i5-6600T Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700K
947558
Boxed Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700
947559
Boxed Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600K
947560
Boxed Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600
947561
Boxed Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500
947562
Boxed Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400
947563
Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700K
947565
Boxed Intel® Core™ i7-6700K Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700
947566
Boxed Intel® Core™ i7-6700 Processor (8M Cache, up to 4.00 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600K
947567
Boxed Intel® Core™ i5-6600K Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6600
947568
Boxed Intel® Core™ i5-6600 Processor (6M Cache, up to 3.90 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6500
947569
Boxed Intel® Core™ i5-6500 Processor (6M Cache, up to 3.60 GHz) FC-LGA14C, for China
CDX-0003C.0006
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6400
947570
Boxed Intel® Core™ i5-6400 Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, for China
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7250
947605
Intel® Xeon Phi™ Processor 7250 (16GB, 1.40 GHz, 68 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
N/A
947606
Intel® Xeon Phi™ Processor 7210 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7210
947607
Intel® Xeon Phi™ Processor 7210 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7230
947609
Intel® Xeon Phi™ Processor 7230 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2690V4
947614
Intel® Xeon® Processor E5-2690 v4 (35M Cache, 2.60 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2650V4
947616
Intel® Xeon® Processor E5-2650 v4 (30M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2660V4
947617
Intel® Xeon® Processor E5-2660 v4 (35M Cache, 2.00 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2680V4
947620
Intel® Xeon® Processor E5-2680 v4 (35M Cache, 2.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2650LV4
947622
Intel® Xeon® Processor E5-2650L v4 (35M Cache, 1.70 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2666V4
947623
Intel® Xeon® Processor E5-2666 v4 (30M Cache, 2.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2687WV4
947624
Intel® Xeon® Processor E5-2687W v4 (30M Cache, 3.00 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2658V4
947636
Intel® Xeon® Processor E5-2658 v4 (35M Cache, 2.30 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2628LV4
947637
Intel® Xeon® Processor E5-2628L v4 (30M Cache, 1.90 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2648LV4
947638
Intel® Xeon® Processor E5-2648L v4 (35M Cache, 1.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2671V4
947639
Intel® Xeon® Processor E5-2671 v4 (35M Cache, 2.30 GHz) FC-LGA14A, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
947686
Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500
947688
Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700T
947690
Intel® Core™ i7-7700T Processor (8M Cache, up to 3.80 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600T
947691
Intel® Core™ i5-7600T Processor (6M Cache, up to 3.70 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500T
947692
Intel® Core™ i5-7500T Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400T
947693
Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2695V4
947739
Boxed Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2660V4
947744
Boxed Intel® Xeon® Processor E5-2660 v4 (35M Cache, 2.00 GHz) FC-LGA14A
1273
14nm
APOLLO LAKE
GENUINE INTEL (R) CPU
N/A
947983
DT [APOLLO LAKE] Processor ULV , 2M Cache, FC-BGA15F, Tray, 10W, FH8066802588601
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6402P
947992
Intel® Core™ i5-6402P Processor (6M Cache, up to 3.40 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2683V4
948034
Boxed Intel® Xeon® Processor E5-2683 v4 (40M Cache, 2.10 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2697V4
948035
Boxed Intel® Xeon® Processor E5-2697 v4 (45M Cache, 2.30 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2695V4
948059
Boxed Intel® Xeon® Processor E5-2695 v4 (45M Cache, 2.10 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6098P
948062
Intel® Core™ i3-6098P Processor (3M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6198DU
948065
Intel® Core™ i5-6198DU Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6498DU
948066
Intel® Core™ i7-6498DU Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6402P
948102
Intel® Core™ i5-6402P Processor (6M Cache, up to 3.40 GHz) FC-LGA14C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
N/A
948107
EMB [APOLLO LAKE] Processor ULV , 2M Cache, FC-BGA15C, Tray, 13W, LH8066802599101
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
N/A
948116
EMB [APOLLO LAKE] Processor ULV , 2M Cache, FC-BGA15C, Tray, 13W, LH8066802599203
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
N/A
948117
EMB [APOLLO LAKE] Processor ULV , 2M Cache, FC-BGA15C, Tray, 9W, LH8066802599304
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2640V4
948123
Intel® Xeon® Processor E5-2640 v4 (25M Cache, 2.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2603V4
948124
Intel® Xeon® Processor E5-2603 v4 (15M Cache, 1.70 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2609V4
948125
Intel® Xeon® Processor E5-2609 v4 (20M Cache, 1.70 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2630LV4
948126
Intel® Xeon® Processor E5-2630L v4 (25M Cache, 1.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2637V4
948127
Intel® Xeon® Processor E5-2637 v4 (15M Cache, 3.50 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2643V4
948128
Intel® Xeon® Processor E5-2643 v4 (20M Cache, 3.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2667V4
948129
Intel® Xeon® Processor E5-2667 v4 (25M Cache, 3.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1620V4
948130
Intel® Xeon® Processor E5-1620 v4 (10M Cache, 3.50 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1650V4
948131
Intel® Xeon® Processor E5-1650 v4 (15M Cache, 3.60 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1680V4
948132
Intel® Xeon® Processor E5-1680 v4 (20M Cache, 3.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2608LV4
948136
Intel® Xeon® Processor E5-2608L v4 (20M Cache, 1.60 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6950X
948137
Intel® Core™ i7-6950X Processor Extreme Edition (25M Cache, up to 3.50 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6900K
948138
Intel® Core™ i7-6900K Processor (20M Cache, up to 3.70 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6850K
948139
Intel® Core™ i7-6850K Processor (15M Cache, up to 3.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6800K
948140
Intel® Core™ i7-6800K Processor (15M Cache, up to 3.60 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2618LV4
948141
Intel® Xeon® Processor E5-2618L v4 (25M Cache, 2.20 GHz) FC-LGA14A, Tray
CDX-0003C.0007
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1630V4
948142
Intel® Xeon® Processor E5-1630 v4 (10M Cache, 3.70 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1603V4
948143
Intel® Xeon® Processor E5-1603 v4 (10M Cache, 2.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1607V4
948144
Intel® Xeon® Processor E5-1607 v4 (10M Cache, 3.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2623V4
948145
Intel® Xeon® Processor E5-2623 v4 (10M Cache, 2.60 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1660V4
948146
Intel® Xeon® Processor E5-1660 v4 (20M Cache, 3.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2690V4
948197
Boxed Intel® Xeon® Processor E5-2690 v4 (35M Cache, 2.60 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2650V4
948198
Boxed Intel® Xeon® Processor E5-2650 v4 (30M Cache, 2.20 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2660V4
948199
Boxed Intel® Xeon® Processor E5-2660 v4 (35M Cache, 2.00 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2680V4
948200
Boxed Intel® Xeon® Processor E5-2680 v4 (35M Cache, 2.40 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2687WV4
948206
Boxed Intel® Xeon® Processor E5-2687W v4 (30M Cache, 3.00 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6700HQ
948244
Intel® Core™ i7-6700HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6402P
948516
Boxed Intel® Core™ i5-6402P Processor (6M Cache, up to 3.40 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6098P
948517
Boxed Intel® Core™ i3-6098P Processor (3M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6402P
948518
Boxed Intel® Core™ i5-6402P Processor (6M Cache, up to 3.40 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6098P
948520
Boxed Intel® Core™ i3-6098P Processor (3M Cache, 3.60 GHz) FC-LGA14C, for China
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2609V4
948609
Boxed Intel® Xeon® Processor E5-2609 v4 (20M Cache, 1.70 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1515MV5
948619
Intel® Xeon® Processor E3-1515M v5 (8M Cache, 2.80 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1545MV5
948620
Intel® Xeon® Processor E3-1545M v5 (8M Cache, 2.90 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1575MV5
948621
Intel® Xeon® Processor E3-1575M v5 (8M Cache, 3.00 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6970HQ
948622
Intel® Core™ i7-6970HQ Processor (8M Cache, up to 3.70 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6870HQ
948623
Intel® Core™ i7-6870HQ Processor (8M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6770HQ
948624
Intel® Core™ i7-6770HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6350HQ
948625
Intel® Core™ i5-6350HQ Processor (6M Cache, up to 3.20 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2630V4
948649
Intel® Xeon® Processor E5-2630 v4 (25M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2620V4
948659
Intel® Xeon® Processor E5-2620 v4 (20M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2630V4
948660
Intel® Xeon® Processor E5-2630 v4 (25M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1565LV5
948665
Intel® Xeon® Processor E3-1565L v5 (8M Cache, 2.50 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1585LV5
948666
Intel® Xeon® Processor E3-1585L v5 (8M Cache, 3.00 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1585V5
948668
Intel® Xeon® Processor E3-1585 v5 (8M Cache, 3.50 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8870V4
948733
Intel® Xeon® Processor E7-8870 v4 (50M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-4850V4
948735
Intel® Xeon® Processor E7-4850 v4 (40M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-4830V4
948737
Intel® Xeon® Processor E7-4830 v4 (35M Cache, 2.00 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-4820V4
948738
Intel® Xeon® Processor E7-4820 v4 (25M Cache, 2.00 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-4820V4
948739
Intel® Xeon® Processor E7-4820 v4 (25M Cache, 2.00 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-4809V4
948741
Intel® Xeon® Processor E7-4809 v4 (20M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8867V4
948742
Intel® Xeon® Processor E7-8867 v4 (45M Cache, 2.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8867V4
948743
Intel® Xeon® Processor E7-8867 v4 (45M Cache, 2.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8880V4
948744
Intel® Xeon® Processor E7-8880 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8880V4
948745
Intel® Xeon® Processor E7-8880 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8860V4
948747
Intel® Xeon® Processor E7-8860 v4 (45M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8855V4
948749
Intel® Xeon® Processor E7-8855 v4 (35M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4650V4
948752
Intel® Xeon® Processor E5-4650 v4 (35M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4628LV4
948754
Intel® Xeon® Processor E5-4628L v4 (35M Cache, 1.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4640V4
948756
Intel® Xeon® Processor E5-4640 v4 (30M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4660V4
948758
Intel® Xeon® Processor E5-4660 v4 (40M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4610V4
948762
Intel® Xeon® Processor E5-4610 v4 (25M Cache, 1.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4667V4
948764
Intel® Xeon® Processor E5-4667 v4 (45M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4669V4
948767
Intel® Xeon® Processor E5-4669 v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4655V4
948768
Intel® Xeon® Processor E5-4655 v4 (30M Cache, 2.50 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4655V4
948769
Intel® Xeon® Processor E5-4655 v4 (30M Cache, 2.50 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4620V4
948771
Intel® Xeon® Processor E5-4620 v4 (25M Cache, 2.10 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-4627V4
948865
Intel® Xeon® Processor E5-4627 v4 (25M Cache, 2.60 GHz) FC-LGA14A, Tray
CDX-0003C.0008
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8891V4
948869
Intel® Xeon® Processor E7-8891 v4 (60M Cache, 2.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8893V4
948871
Intel® Xeon® Processor E7-8893 v4 (60M Cache, 3.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8890V4
948872
Intel® Xeon® Processor E7-8890 v4 (60M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8890V4
948873
Intel® Xeon® Processor E7-8890 v4 (60M Cache, 2.20 GHz) FC-LGA14A, Tray
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM®
N4200
948985
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2630V4
949003
Boxed Intel® Xeon® Processor E5-2630 v4 (25M Cache, 2.20 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2640V4
949004
Boxed Intel® Xeon® Processor E5-2640 v4 (25M Cache, 2.40 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON®
E5-2603V4
949005
Boxed Intel® Xeon® Processor E5-2603 v4 (15M Cache, 1.70 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2609V4
949006
Boxed Intel® Xeon® Processor E5-2609 v4 (20M Cache, 1.70 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1620V4
949007
Boxed Intel® Xeon® Processor E5-1620 v4 (10M Cache, 3.50 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6850K
949174
Intel® Core™ i7-6850K Processor (15M Cache, up to 3.80 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6800K
949175
Intel® Core™ i7-6800K Processor (15M Cache, up to 3.60 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2689V4
949319
Intel® Xeon® Processor E5-2689 v4 (25M Cache, 3.10 GHz) FC-LGA14A, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
N/A
949356
SRV [KNIGHTS LANDING] Processor 1.50 GHz, 36M Cache, FC-LGA14B, Tray, 245W, HJ8066702974700
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
N/A
949367
SRV [KNIGHTS LANDING] Processor 1.30 GHz, 32M Cache, FC-LGA14B, Tray, 230W, HJ8066702975000
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
949415
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2620V4
949499
Boxed Intel® Xeon® Processor E5-2620 v4 (20M Cache, 2.10 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2630V4
949500
Boxed Intel® Xeon® Processor E5-2630 v4 (25M Cache, 2.20 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2699CV4
949756
Intel® Xeon® Processor E5-2699C v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
949784
Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4600
949788
Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3930
949799
Intel® Celeron® Processor G3930 (2M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100T
949805
Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4600T
949807
Intel® Pentium® Processor G4600T (3M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3930T
949811
Intel® Celeron® Processor G3930T (2M Cache, 2.70 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1578LV5
949901
Intel® Xeon® Processor E3-1578L v5 (8M Cache, 2.00 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
E3-1558LV5
949904
Intel® Xeon® Processor E3-1558L v5 (8M Cache, 1.90 GHz) FC-BGA14F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3900
950313
Intel Atom® Processor E3900 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3900
950318
Intel Atom® Processor E3900 (2M Cache, up to 2.40 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3900
950321
Intel Atom® Processor E3900 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3900
950325
Intel Atom® Processor E3900 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1526
950400
Intel® Xeon® Processor D-1526 (6M Cache, 1.80 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6950X
950624
Boxed Intel® Core™ i7-6950X Processor Extreme Edition (25M Cache, up to 3.50 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6900K
950625
Boxed Intel® Core™ i7-6900K Processor (20M Cache, up to 3.70 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6850K
950626
Boxed Intel® Core™ i7-6850K Processor (15M Cache, up to 3.80 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6800K
950627
Boxed Intel® Core™ i7-6800K Processor (15M Cache, up to 3.60 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6950X
950628
Boxed Intel® Core™ i7-6950X Processor Extreme Edition (25M Cache, up to 3.50 GHz) FC-LGA14A, for China
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6900K
950629
Boxed Intel® Core™ i7-6900K Processor (20M Cache, up to 3.70 GHz) FC-LGA14A, for China
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6850K
950630
Boxed Intel® Core™ i7-6850K Processor (15M Cache, up to 3.80 GHz) FC-LGA14A, for China
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
I7-6800K
950631
Boxed Intel® Core™ i7-6800K Processor (15M Cache, up to 3.60 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-1650V4
950795
Boxed Intel® Xeon® Processor E5-1650 v4 (15M Cache, 3.60 GHz) FC-LGA14A
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
950936
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
950937
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
950938
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7290
951260
Intel® Xeon Phi™ Processor 7290 (16GB, 1.50 GHz, 72 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7290F
951262
Intel® Xeon Phi™ Processor 7290F (16GB, 1.50 GHz, 72 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7250F
951264
Intel® Xeon Phi™ Processor 7250F (16GB, 1.40 GHz, 68 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7250
951266
Intel® Xeon Phi™ Processor 7250 (16GB, 1.40 GHz, 68 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7230F
951268
Intel® Xeon Phi™ Processor 7230F (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7230
951270
Intel® Xeon Phi™ Processor 7230 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7210
951272
Intel® Xeon Phi™ Processor 7210 (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray
CDX-0003C.0009
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
KNIGHTS LANDING
INTEL(R) XEON PHI(TM)
7210F
951274
Intel® Xeon Phi™ Processor 7210F (16GB, 1.30 GHz, 64 core) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6157U
951298
Intel® Core™ i3-6157U Processor (3M Cache, 2.40 GHz) FC-BGA14C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3940
951358
Intel Atom® Processor A3940 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3950
951366
Intel Atom® Processor A3950 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3930
951369
Intel Atom® Processor A3930 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3960
951370
Intel Atom® Processor A3960 (2M Cache, up to 2.40 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL(R) ATOM(TM)
C3324
951429
Intel Atom® Processor C3324 (4M Cache, up to 1.70) FC-BGA15Z, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3754
951434
Intel Atom® Processor C3754 (16M Cache, up to 1.70) FC-BGA15Z, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1530
951482
Intel® Xeon® Processor D-1530 (6M Cache, 2.40 GHz) FC-BGA14C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951483
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951484
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951485
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
J3355
951489
Intel® Celeron® Processor J3355 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
J3455
951490
Intel® Celeron® Processor J3455 (2M Cache, up to 2.30 GHz) FC-BGA15F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
P-8136
951595
Intel® Xeon® Platinum P-8136 Processor (38.5M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
P-8124
951607
Intel® Xeon® Platinum P-8124 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
P-8136
951616
Intel® Xeon® Platinum P-8136 Processor (38.5M Cache, 2.00 GHz) FC-LGA14B, Tray
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
J3355
951841
Intel® Celeron® Processor J3355 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
J3455
951842
Intel® Celeron® Processor J3455 (2M Cache, up to 2.30 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
J4205
951843
Intel® Pentium® Processor J4205 (2M Cache, up to 2.60 GHz) FC-BGA15F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
951956
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
951957
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
951958
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
951959
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7Y54
951960
Intel® Core™ i5-7Y54 Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) M
M3-7Y30
951961
Intel® Core™ m3-7Y30 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2699AV4
952190
Intel® Xeon® Processor E5-2699A v4 (55M Cache, 2.40 GHz) FC-LGA14A, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E5-2699RV4
952514
Intel® Xeon® Processor E5-2699R v4 (55M Cache, 2.20 GHz) FC-LGA14A, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1280V6
952786
Intel® Xeon® Processor E3-1280 v6 (8M Cache, 3.90 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1270V6
952787
Intel® Xeon® Processor E3-1270 v6 (8M Cache, 3.80 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1240V6
952788
Intel® Xeon® Processor E3-1240 v6 (8M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1230V6
952789
Intel® Xeon® Processor E3-1230 v6 (8M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1220V6
952790
Intel® Xeon® Processor E3-1220 v6 (8M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1275V6
952791
Intel® Xeon® Processor E3-1275 v6 (8M Cache, 3.80 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1245V6
952792
Intel® Xeon® Processor E3-1245 v6 (8M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1225V6
952793
Intel® Xeon® Processor E3-1225 v6 (8M Cache, 3.30 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1205V6
952794
Intel® Xeon® Processor E3-1205 v6 (8M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7600U
952861
Intel® Core™ i7-7600U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300U
952866
Intel® Core™ i5-7300U Processor (3M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3865U
952874
Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1535MV6
952949
Intel® Xeon® Processor E3-1535M (8M Cache, 3.10 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1505MV6
952951
Intel® Xeon® Processor E3-1505M (8M Cache, 3.00 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7920HQ
952952
Intel® Core™ i7-7920HQ Processor (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7820HQ
952954
Intel® Core™ i7-7820HQ Processor (8M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7820HK
952955
Intel® Core™ i7-7820HK Processor (8M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7440HQ
952958
Intel® Core™ i5-7440HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100H
952960
Intel® Core™ i3-7100H Processor (3M Cache, 3.00 GHz) FC-BGA14F, Tray
CDX-0003C.00010
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
BROADWELL
INTEL(R)XEON(R)
E7-8894V4
952962
Intel® Xeon® Processor E7-8894 v4 (60M Cache, 2.40 GHz) FC-LGA14A, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600K
952985
Intel® Core™ i5-7600K Processor (6M Cache, up to 4.20 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4560
952994
Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7101E
952995
Intel® Core™ i3-7101E Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400T
952998
Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600
953000
Intel® Core™ i5-7600 Processor (6M Cache, up to 4.10 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500
953001
Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600T
953002
Intel® Core™ i5-7600T Processor (6M Cache, up to 3.70 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500T
953003
Intel® Core™ i5-7500T Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953004
Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700T
953005
Intel® Core™ i7-7700T Processor (8M Cache, up to 3.80 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700K
953006
Intel® Core™ i7-7700K Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3940
953082
Intel Atom® Processor A3940 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3940
953083
Intel Atom® x5-E3940 Processor (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3950
953084
Intel Atom® Processor A3950 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3950
953085
Intel Atom® x7-E3950 Processor (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3930
953086
Intel Atom® x5-E3930 Processor (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3930
953087
Intel Atom® Processor A3930 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3960
953096
Intel Atom® Processor A3960 (2M Cache, up to 2.40 GHz) FC-BGA15C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
953348
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7Y57
953349
Intel® Core™ i5-7Y57 Processor (4M Cache, up to 3.30 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7600U
953350
Intel® Core™ i7-7600U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300U
953351
Intel® Core™ i5-7300U Processor (3M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
953352
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
953354
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7Y54
953356
Intel® Core™ i5-7Y54 Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) M
M3-7Y32
953357
Intel® Core™ m3-7Y32 Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) M
M3-7Y30
953358
Intel® Core™ m3-7Y30 Processor (4M Cache, up to 2.60 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
4415U
953359
Intel® Pentium® Processor 4415U (2M Cache, 2.30 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3865U
953360
Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3965U
953361
Intel® Celeron® Processor 3965U (2M Cache, 2.20 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
4410Y
953362
Intel® Pentium® Processor 4410Y (2M Cache, 1.50 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953654
Boxed Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700K
953655
Boxed Intel® Core™ i7-7700K Processor (8M Cache, up to 4.50 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600K
953680
Boxed Intel® Core™ i5-7600K Processor (6M Cache, up to 4.20 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
953681
Boxed Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600
953682
Boxed Intel® Core™ i5-7600 Processor (6M Cache, up to 4.10 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500
953683
Boxed Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600K
953700
Boxed Intel® Core™ i5-7600K Processor (6M Cache, up to 4.20 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
953701
Boxed Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600
953702
Boxed Intel® Core™ i5-7600 Processor (6M Cache, up to 4.10 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500
953703
Boxed Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953712
Boxed Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700K
953713
Boxed Intel® Core™ i7-7700K Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8124M
953855
Intel® Xeon® Platinum 8124M Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5117
953878
Intel® Xeon® Gold 5117 Processor (19.25M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7820EQ
953940
Intel® Core™ i7-7820EQ Processor (8M Cache, up to 3.70 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7440EQ
953941
Intel® Core™ i5-7440EQ Processor (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7442EQ
953942
Intel® Core™ i5-7442EQ Processor (6M Cache, up to 2.90 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100E
953943
Intel® Core™ i3-7100E Processor (3M Cache, 2.90 GHz) FC-BGA14F, Tray
CDX-0003C.00011
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7102E
953944
Intel® Core™ i3-7102E Processor (3M Cache, 2.10 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1505LV6
953947
Intel® Xeon® Processor E3-1505L v6 (8M Cache, 2.20 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7320
954022
Intel® Core™ i3-7320 Processor (4M Cache, 4.10 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7300
954023
Intel® Core™ i3-7300 Processor (4M Cache, 4.00 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7350K
954030
Intel® Core™ i3-7350K Processor (4M Cache, 4.20 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954033
Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4620
954035
Intel® Pentium® Processor G4620 (3M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4600
954039
Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3950
954042
Intel® Celeron® Processor G3950 (2M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3930
954043
Intel® Celeron® Processor G3930 (2M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7300T
954045
Intel® Core™ i3-7300T Processor (4M Cache, 3.50 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100T
954047
Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4600T
954049
Intel® Pentium® Processor G4600T (3M Cache, 3.00 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4560T
954051
Intel® Pentium® Processor G4560T (3M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3930T
954053
Intel® Celeron® Processor G3930T (2M Cache, 2.70 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7287U
954104
Intel® Core™ i5-7287U Processor (4M Cache, up to 3.70 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7167U
954106
Intel® Core™ i3-7167U Processor (3M Cache, 2.80 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7267U
954107
Intel® Core™ i5-7267U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7260U
954108
Intel® Core™ i5-7260U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7360U
954110
Intel® Core™ i5-7360U Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7560U
954111
Intel® Core™ i7-7560U Processor (4M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7567U
954112
Intel® Core™ i7-7567U Processor (4M Cache, up to 4.00 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7660U
954113
Intel® Core™ i7-7660U Processor (4M Cache, up to 4.00 GHz) FC-BGA14F, Tray
1273
14nm
DENVERTON
INTEL(R) ATOM(TM)
C3338
954194
Intel Atom® Processor C3338 (4M Cache, up to 2.20 GHz) FC-BGA15C, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400T
954219
Boxed Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600T
954220
Boxed Intel® Core™ i5-7600T Processor (6M Cache, up to 3.70 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500T
954221
Boxed Intel® Core™ i5-7500T Processor (6M Cache, up to 3.30 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700T
954222
Boxed Intel® Core™ i7-7700T Processor (8M Cache, up to 3.80 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400T
954225
Boxed Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7600T
954227
Boxed Intel® Core™ i5-7600T Processor (6M Cache, up to 3.70 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500T
954228
Boxed Intel® Core™ i5-7500T Processor (6M Cache, up to 3.30 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700T
954229
Boxed Intel® Core™ i7-7700T Processor (8M Cache, up to 3.80 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7300
954311
Boxed Intel® Core™ i3-7300 Processor (4M Cache, 4.00 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954312
Boxed Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4560
954313
Boxed Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4600
954315
Boxed Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1270V6
954318
Boxed Intel® Xeon® Processor E3-1270 v6 (8M Cache, 3.80 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1240V6
954319
Boxed Intel® Xeon® Processor E3-1240 v6 (8M Cache, 3.70 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1230V6
954320
Boxed Intel® Xeon® Processor E3-1230 v6 (8M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1275V6
954321
Boxed Intel® Xeon® Processor E3-1275 v6 (8M Cache, 3.80 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1245V6
954323
Boxed Intel® Xeon® Processor E3-1245 v6 (8M Cache, 3.70 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1220V6
954324
Boxed Intel® Xeon® Processor E3-1220 v6 (8M Cache, 3.00 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1225V6
954325
Boxed Intel® Xeon® Processor E3-1225 v6 (8M Cache, 3.30 GHz) FC-LGA14C
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
954360
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON®
N3450
954361
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
954362
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3940
954396
Intel Atom® Processor A3940 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3950
954399
Intel Atom® Processor A3950 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3950
954401
Intel Atom® x7-E3950 Processor (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
E3930
954402
Intel Atom® x5-E3930 Processor (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3930
954403
Intel Atom® Processor A3930 (2M Cache, up to 1.80 GHz) FC-BGA15C, Tray
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3960
954404
Intel Atom® Processor A3960 (2M Cache, up to 2.40 GHz) FC-BGA15C, Tray
CDX-0003C.00012
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6126F
954691
Intel® Xeon® Gold 6126F Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7320
954808
Boxed Intel® Core™ i3-7320 Processor (4M Cache, 4.10 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7300
954809
Boxed Intel® Core™ i3-7300 Processor (4M Cache, 4.00 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7350K
954810
Boxed Intel® Core™ i3-7350K Processor (4M Cache, 4.20 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954811
Boxed Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4560
954812
Boxed Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4620
954813
Boxed Intel® Pentium® Processor G4620 (3M Cache, 3.70 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4600
954814
Boxed Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3950
954815
Boxed Intel® Celeron® Processor G3950 (2M Cache, 3.00 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3930
954816
Boxed Intel® Celeron® Processor G3930 (2M Cache, 2.90 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7300
954817
Boxed Intel® Core™ i3-7300 Processor (4M Cache, 4.00 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7350K
954818
Boxed Intel® Core™ i3-7350K Processor (4M Cache, 4.20 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954819
Boxed Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4560
954821
Boxed Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4600
954822
Boxed Intel® Pentium® Processor G4600 (3M Cache, 3.60 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3930
954823
Boxed Intel® Celeron® Processor G3930 (2M Cache, 2.90 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1285V6
955012
Intel® Xeon® Processor E3-1285 v6 (8M Cache, 4.10 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7101TE
955013
Intel® Core™ i3-7101TE Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8180
955025
Intel® Xeon® Platinum 8180 Processor (38.5M Cache, 2.50 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8176
955028
Intel® Xeon® Platinum 8176 Processor (38.5M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8170
955035
Intel® Xeon® Platinum 8170 Processor (35.75M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8168
955036
Intel® Xeon® Platinum 8168 Processor (33M Cache, 2.70 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6150
955037
Intel® Xeon® Gold 6150 Processor (24.75M Cache, 2.70 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8173M
955108
Intel® Xeon® Platinum 8173M Processor (38.5M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8124M
955109
Intel® Xeon® Platinum 8124M Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5117
955110
Intel® Xeon® Gold 5117 Processor (19.25M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8180M
955111
Intel® Xeon® Platinum 8180M Processor (38.5M Cache, 2.50 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8176M
955112
Intel® Xeon® Platinum 8176M Processor (38.5M Cache, 2.10 GHz) FC-LGA14B, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3958
955144
Intel Atom® Processor C3958 (16M Cache, up to 2.0 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3538
955146
Intel Atom® Processor C3538 (8M Cache, up to 2.10 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3750
955157
Intel Atom® Processor C3750 (16M Cache, up to 2.40 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3850
955159
Intel Atom® Processor C3850 (12M Cache, up to 2.40 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3558
955160
Intel Atom® Processor C3558 (8M Cache, up to 2.20 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3758
955161
Intel Atom® Processor C3758 (16M Cache, up to 2.20 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3858
955162
Intel Atom® Processor C3858 (12M Cache, up to 2.0 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3338
955163
Intel Atom® Processor C3338 (4M Cache, up to 2.20 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3808
955164
Intel Atom® Processor C3808 (12M Cache, up to 2.0 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3308
955165
Intel Atom® Processor C3308 (4M Cache, up to 2.10 GHz) FC-BGA15C, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3708
955167
Intel Atom® Processor C3708 (16M Cache, up to 1.70 GHz) FC-BGA15C, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3930E
955177
Intel® Celeron® Processor G3930E (2M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
G3930TE
955178
Intel® Celeron® Processor G3930TE (2M Cache, 2.70 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8167M
955233
Intel® Xeon® Platinum 8167M Processor (35.75M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7300T
955324
Boxed Intel® Core™ i3-7300T Processor (4M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100T
955325
Boxed Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7300T
955326
Boxed Intel® Core™ i3-7300T Processor (4M Cache, 3.50 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100T
955327
Boxed Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8173M
955508
Intel® Xeon® Platinum 8173M Processor (38.5M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6150
955514
Intel® Xeon® Gold 6150 Processor (24.75M Cache, 2.70 GHz) FC-LGA14B, Tray
1273
14nm
DENVERTON
INTEL(R) ATOM(TM)
C3754
955790
Intel Atom® Processor C3754 (16M Cache, up to 1.70) FC-BGA15Z, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6134
955887
Intel® Xeon® Gold 6134 Processor (24.75M Cache, 3.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6134M
955889
Intel® Xeon® Gold 6134M Processor (24.75M Cache, 3.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5122
955974
Intel® Xeon® Gold 5122 Processor (16.5M Cache, 3.60 GHz) FC-LGA14B, Tray
CDX-0003C.00013
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8156
955978
Intel® Xeon® Platinum 8156 Processor (16.5M Cache, 3.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6140
955989
Intel® Xeon® Gold 6140 Processor (24.75M Cache, 2.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6142
955993
Intel® Xeon® Gold 6142 Processor (22M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6140M
955996
Intel® Xeon® Gold 6140M Processor (24.75M Cache, 2.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8160
955998
Intel® Xeon® Platinum 8160 Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6142M
956000
Intel® Xeon® Gold 6142M Processor (22M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6136
956002
Intel® Xeon® Gold 6136 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6126
956004
Intel® Xeon® Gold 6126 Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6152
956006
Intel® Xeon® Gold 6152 Processor (30.25M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6138
956008
Intel® Xeon® Gold 6138 Processor (27.5M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6148
956010
Intel® Xeon® Gold 6148 Processor (27.5M Cache, 2.40 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8158
956012
Intel® Xeon® Platinum 8158 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8160M
956014
Intel® Xeon® Platinum 8160M Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6130
956018
Intel® Xeon® Gold 6130 Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6130
956019
Intel® Xeon® Gold 6130 Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8153
956021
Intel® Xeon® Platinum 8153 Processor (22M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8164
956023
Intel® Xeon® Platinum 8164 Processor (35.75M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8170M
956027
Intel® Xeon® Platinum 8170M Processor (35.75M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1501LV6
956300
Intel® Xeon® Processor E3-1501L v6 (6M Cache, up to 2.90 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
E3-1501MV6
956301
Intel® Xeon® Processor E3-1501M v6 (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3955
956392
Intel Atom® Processor C3955 (16M Cache, up to 2.40 GHz) FC-BGA15C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7740X
957005
Intel® Core™ i7-7740X X-series Processor (8M Cache, up to 4.50 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7740X
957006
Intel® Core™ i7-7740X X-series Processor (8M Cache, up to 4.50 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7640X
957007
Intel® Core™ i5-7640X X-series Processor (6M Cache, up to 4.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4110
957188
Intel® Xeon® Silver 4110 Processor (11M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8175M
957279
Intel® Xeon® Platinum 8175M Processor (33M Cache, 2.50 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8163
957286
Intel® Xeon® Platinum 8163 Processor (33M Cache, 2.50 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6149
957292
Intel® Xeon® Gold 6149 Processor (22M Cache, 3.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6151
957296
Intel® Xeon® Gold 6151 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6161
957297
Intel® Xeon® Gold 6161 Processor (30.25M Cache, 2.20 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
4415Y
957336
Intel® Pentium® Processor 4415Y (2M Cache, 1.60 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5115
957337
Intel® Xeon® Gold 5115 Processor (13.75M Cache, 2.40 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5120T
957338
Intel® Xeon® Gold 5120T Processor (19.25M Cache, 2.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5120
957339
Intel® Xeon® Gold 5120 Processor (19.25M Cache, 2.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5118
957341
Intel® Xeon® Gold 5118 Processor (16.5M Cache, 2.30 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3965Y
957364
Intel® Celeron® Processor 3965Y (2M Cache, 1.50 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4110
957416
Intel® Xeon® Silver 4110 Processor (11M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4108
957417
Intel® Xeon® Silver 4108 Processor (11M Cache, 1.80 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4114
957418
Intel® Xeon® Silver 4114 Processor (13.75M Cache, 2.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) BRONZE
3106
957419
Intel® Xeon® Bronze 3106 Processor (11M Cache, 1.70 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) BRONZE
3104
957420
Intel® Xeon® Bronze 3104 Processor (8.25M Cache, 1.70 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4112
957421
Intel® Xeon® Silver 4112 Processor (8.25M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4109T
957422
Intel® Xeon® Silver 4109T Processor (11M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6130T
957552
Intel® Xeon® Gold 6130T Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4116
957661
Intel® Xeon® Silver 4116 Processor (16.5M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6132
958178
Intel® Xeon® Gold 6132 Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6128
958179
Intel® Xeon® Gold 6128 Processor (19.25M Cache, 3.40 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6154
958186
Intel® Xeon® Gold 6154 Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8160T
958187
Intel® Xeon® Platinum 8160T Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6138T
958188
Intel® Xeon® Gold 6138T Processor (27.5M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6130T
958189
Intel® Xeon® Gold 6130T Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6126T
958190
Intel® Xeon® Gold 6126T Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray
CDX-0003C.00014
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6129
958220
Intel® Xeon® Gold 6129 Processor (22M Cache, 2.30 GHz) FC-LGA14B, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3508
958405
Intel Atom® Processor C3508 (8M Cache, up to 1.50) FC-BGA15C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7130U
958406
Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6130F
958465
Intel® Xeon® Gold 6130F Processor (22M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6126F
958466
Intel® Xeon® Gold 6126F Processor (19.25M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8160F
958468
Intel® Xeon® Platinum 8160F Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6142F
958469
Intel® Xeon® Gold 6142F Processor (22M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6148F
958470
Intel® Xeon® Gold 6148F Processor (27.5M Cache, 2.40 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6138F
958471
Intel® Xeon® Gold 6138F Processor (27.5M Cache, 2.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5117F
958478
Intel® Xeon® Gold 5117F Processor (19.25M Cache, 2.00 GHz) FC-LGA14B, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3908
958484
Intel Atom® Processor C3908 (16M Cache, up to 2.00 GHz) FC-BGA15C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1533N
958597
Intel® Xeon® Processor D-1533N (9M Cache, 2.10 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1553N
958598
Intel® Xeon® Processor D-1553N (12M Cache, 2.30 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1513N
958600
Intel® Xeon® Processor D-1513N (6M Cache, 1.60 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1543N
958602
Intel® Xeon® Processor D-1543N (12M Cache, 1.90 GHz) FC-BGA14C, Tray
1272
14nm
SKY MEADOW
INTEL(R)XEON(R)
N/A
958704
[Missing External Name] CD8067303204102
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7900X
958960
Intel® Core™ i9-7900X X-series Processor (13.75M Cache, up to 4.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7800X
958962
Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7820X
958963
Intel® Core™ i7-7820X X-series Processor (11M Cache, up to 4.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8180
958969
Boxed Intel® Xeon® Platinum 8180 Processor (38.5M Cache, 2.50 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8176
958970
Boxed Intel® Xeon® Platinum 8176 Processor (38.5M Cache, 2.10 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8170
958971
Boxed Intel® Xeon® Platinum 8170 Processor (35.75M Cache, 2.10 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8160
958972
Boxed Intel® Xeon® Platinum 8160 Processor (33M Cache, 2.10 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8164
958973
Boxed Intel® Xeon® Platinum 8164 Processor (35.75M Cache, 2.00 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6134
958974
Boxed Intel® Xeon® Gold 6134 Processor (24.75M Cache, 3.20 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5122
958975
Boxed Intel® Xeon® Gold 5122 Processor (16.5M Cache, 3.60 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6140
958976
Boxed Intel® Xeon® Gold 6140 Processor (24.75M Cache, 2.30 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6142
958977
Boxed Intel® Xeon® Gold 6142 Processor (22M Cache, 2.60 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6152
958978
Boxed Intel® Xeon® Gold 6152 Processor (30.25M Cache, 2.10 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6138
958979
Boxed Intel® Xeon® Gold 6138 Processor (27.5M Cache, 2.00 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6148
958981
Boxed Intel® Xeon® Gold 6148 Processor (27.5M Cache, 2.40 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6130
958982
Boxed Intel® Xeon® Gold 6130 Processor (22M Cache, 2.10 GHz) FC-LGA14B
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8350U
959020
Intel® Core™ i5-8350U Processor (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3538
959047
Intel Atom® Processor C3538 (8M Cache, up to 2.10 GHz) FC-BGA15C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
959053
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8650U
959152
Intel® Core™ i7-8650U Processor (8M Cache, up to 4.20 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8350U
959155
Intel® Core™ i5-8350U Processor (6M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7740X
959157
Boxed Intel® Core™ i7-7740X X-series Processor (8M Cache, up to 4.50 GHz) FC-LGA14B
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7640X
959158
Boxed Intel® Core™ i5-7640X X-series Processor (6M Cache, up to 4.20 GHz) FC-LGA14B
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7740X
959159
Boxed Intel® Core™ i7-7740X X-series Processor (8M Cache, up to 4.50 GHz) FC-LGA14B, for China
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7640X
959161
Boxed Intel® Core™ i5-7640X X-series Processor (6M Cache, up to 4.20 GHz) FC-LGA14B, for China
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959162
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2102
959167
Intel® Xeon® W-2102 Processor (8.25M Cache, 2.90 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2104
959168
Intel® Xeon® W-2104 Processor (8.25M Cache, 3.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2123
959169
Intel® Xeon® W-2123 Processor (8.25M Cache, 3.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2140B
959170
Intel® Xeon® W-2140B Processor (11M Cache, 3.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2133
959171
Intel® Xeon® W-2133 Processor (8.25M Cache, 3.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2125
959172
Intel® Xeon® W-2125 Processor (8.25M Cache, 4.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2135
959173
Intel® Xeon® W-2135 Processor (8.25M Cache, 3.70 GHz) FC-LGA14B, Tray
CDX-0003C.00015
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2145
959175
Intel® Xeon® W-2145 Processor (11M Cache, 3.70 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2155
959176
Intel® Xeon® W-2155 Processor (13.75M Cache, 3.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2150B
959177
Intel® Xeon® W-2150B Processor (13.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8171M
959466
Intel® Xeon® Platinum 8171M Processor (35.75M Cache, 2.60 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8151
959467
Intel® Xeon® Platinum 8151 Processor (24.75M Cache, 3.40 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6133
959468
Intel® Xeon® Gold 6133 Processor (27.5M Cache, 2.50 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6137
959470
Intel® Xeon® Gold 6137 Processor (24.75M Cache, 3.90 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6143
959474
Intel® Xeon® Gold 6143 Processor (22M Cache, 2.80 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8165
959475
Intel® Xeon® Platinum 8165 Processor (33M Cache, 2.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6146
959503
Intel® Xeon® Gold 6146 Processor (24.75M Cache, 3.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6144
959504
Intel® Xeon® Gold 6144 Processor (24.75M Cache, 3.50 GHz) FC-LGA14B, Tray
1273
14nm
DENVERTON
INTEL(R) ATOM(TM)
C3314
959594
EMB [DENVERTON] Processor C3314 1.20 GHz, 4M Cache, FC-BGA15Z, T&R, 9W, HW8076502693601
1273
14nm
DENVERTON
INTEL(R) ATOM(TM)
C3324
959595
EMB [DENVERTON] Processor C3324 1.70 GHz, 4M Cache, FC-BGA15Z, T&R, 10W, HW8076502693701
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8176F
959636
Intel® Xeon® Platinum 8176F Processor (38.5M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5120
959684
Boxed Intel® Xeon® Gold 5120 Processor (19.25M Cache, 2.20 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4116
959685
Boxed Intel® Xeon® Silver 4116 Processor (16.5M Cache, 2.10 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4114T
959707
Intel® Xeon® Silver 4114T Processor (13.75M Cache, 2.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) BRONZE
3106
959761
Boxed Intel® Xeon® Bronze 3106 Processor (11M Cache, 1.70 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) BRONZE
3104
959762
Boxed Intel® Xeon® Bronze 3104 Processor (8.25M Cache, 1.70 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4110
959763
Boxed Intel® Xeon® Silver 4110 Processor (11M Cache, 2.10 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4108
959764
Boxed Intel® Xeon® Silver 4108 Processor (11M Cache, 1.80 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4114
959765
Boxed Intel® Xeon® Silver 4114 Processor (13.75M Cache, 2.20 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4112
959766
Boxed Intel® Xeon® Silver 4112 Processor (8.25M Cache, 2.60 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6128
959767
Boxed Intel® Xeon® Gold 6128 Processor (19.25M Cache, 3.40 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
5119T
959780
Intel® Xeon® Gold 5119T Processor (19.25M Cache, 1.90 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6127M
959783
Intel® Xeon® Gold 6127M Processor (22M Cache, 2.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4116T
959790
Intel® Xeon® Silver 4116T Processor (16.5M cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7900X
959986
Boxed Intel® Core™ i9-7900X X-series Processor (13.75M Cache, up to 4.30 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7800X
959987
Boxed Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7820X
959988
Boxed Intel® Core™ i7-7820X X-series Processor (11M Cache, up to 4.30 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7900X
959989
Boxed Intel® Core™ i9-7900X X-series Processor (13.75M Cache, up to 4.30 GHz) FC-LGA14B, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7800X
959991
Boxed Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7820X
959993
Boxed Intel® Core™ i7-7820X X-series Processor (11M Cache, up to 4.30 GHz) FC-LGA14B, for China
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960006
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8350K
960011
Intel® Core™ i3-8350K Processor (8M Cache, 4.00 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
960019
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7920X
960064
Intel® Core™ i9-7920X X-series Processor (16.5M Cache, up to 4.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7800X
960065
Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700K
960617
Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600K
960620
Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, Tray
1272
14nm
STRIKE RIDGE
INTEL(R) XEON PHI(TM)
960869
SRV [STRIKE RIDGE] Processor 2.20 GHz, 2M Cache, FC-LGA14B, Tray, 300W, HJ8069303810101
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8350K
961059
Boxed Intel® Core™ i3-8350K Processor (8M Cache, 4.00 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
961060
Boxed Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8350K
961083
Boxed Intel® Core™ i3-8350K Processor (8M Cache, 4.00 GHz) FC-LGA14C, for China
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
961084
Boxed Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8706G
961153
Intel® Core™ i7-8706G Processor with Radeon™ RX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8705G
961154
Intel® Core™ i7-8705G Processor with Radeon™ RX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8305G
961161
Intel® Core™ i5-8305G Processor with Radeon™ RX Vega M GL graphics (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8709G
961162
Intel® Core™ i7-8709G Processor with Radeon™ RX Vega M GH graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray
CDX-0003C.00016
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7920X
961170
Boxed Intel® Core™ i9-7920X X-series Processor (16.5M Cache, up to 4.30 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7920X
961171
Boxed Intel® Core™ i9-7920X X-series Processor (16.5M Cache, up to 4.30 GHz) FC-LGA14B, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7940X
961191
Intel® Core™ i9-7940X X-series Processor (19.25M Cache, up to 4.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7960X
961201
Intel® Core™ i9-7960X X-series Processor (22M Cache, up to 4.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7980XE
961202
Intel® Core™ i9-7980XE Extreme Edition Processor (24.75M Cache, up to 4.20 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2191B
961299
Intel® Xeon® W-2191B Processor (24.75M Cache, 2.30 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2195
961300
Intel® Xeon® W-2195 Processor (24.75M Cache, 2.30 GHz) FC-LGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700K
961566
Boxed Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
961567
Boxed Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
961568
Boxed Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600K
961570
Boxed Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700K
961573
Boxed Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, for China
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
961574
Boxed Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, for China
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
961575
Boxed Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, for China
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600K
961576
Boxed Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, for China
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
J5005
961642
Intel® Pentium® Silver J5005 Processor (4M Cache, up to 2.80 GHz) FC-BGA15F, Tray
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
J4105
961643
Intel® Celeron® J4105 Processor (4M Cache, up to 2.50 GHz) FC-BGA15F, Tray
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
J4005
961644
Intel® Celeron® J4005 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2123
961844
Boxed Intel® Xeon™ W-2123 Processor (8.25M Cache, 3.60 GHz) FC-LGA14B
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
961968
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7800X
962010
Boxed Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-7800X
962011
Boxed Intel® Core™ i7-7800X X-series Processor (8.25M Cache, up to 4.00 GHz) FC-LGA14B, for China
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6144
962201
Intel® Xeon® Gold 6144 Processor (24.75M Cache, 3.50 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2135
962353
Boxed Intel® Xeon™ W-2135 Processor (8.25M Cache, 3.70 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7940X
962501
Boxed Intel® Core™ i9-7940X Processor (19.25M Cache, up to 4.30 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7960X
962502
Boxed Intel® Core™ i9-7960X Processor (22M Cache, up to 4.20 GHz) FC-LGA14B
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7940X
962506
Boxed Intel® Core™ i9-7940X Processor (19.25M Cache, up to 4.30 GHz) FC-LGA14B, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7960X
962507
Boxed Intel® Core™ i9-7960X Processor (22M Cache, up to 4.20 GHz) FC-LGA14B, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7980XE
962508
Boxed Intel® Core™ i9-7980XE Extreme Edition Processor (24.75M Cache, up to 4.20 GHz) FC-LGA14B, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-7980XE
962509
Boxed Intel® Core™ i9-7980XE Extreme Edition Processor (24.75M Cache, up to 4.20 GHz) FC-LGA14B
1273
14nm
DENVERTON
INTEL(R) ATOM(TM)
C3754
962679
Intel® Atom™ Processor C3754 (16M Cache, 1.70 GHz) FC-BGA15Z, Tray
1272
14nm
KNIGHTS MILL
INTEL(R) XEON PHI(TM)
7295
962788
Intel® Xeon Phi™ Processor 7295 (16GB, 1.5 GHz, 72 Core) FC-LGA14B, Tray
1272
14nm
KNIGHTS MILL
INTEL(R) XEON PHI(TM)
7285
962808
Intel® Xeon Phi™ Processor 7285 (16GB, 1.3 GHz, 68 Core) FC-LGA14B, Tray
1272
14nm
KNIGHTS MILL
INTEL(R) XEON PHI(TM)
7235
962809
Intel® Xeon Phi™ Processor 7235 (16GB, 1.3 GHz, 64 Core) FC-LGA14B, Tray
1272
14nm
KNIGHTS MILL
INTEL(R) XEON PHI(TM)
7255
962810
Intel® Xeon Phi™ Processor 7255 (16GB, 1.1 GHz, 68 Core) FC-LGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5400
962838
Intel® Pentium® Gold G5400 Processor (4M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
962883
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4123
963002
Intel® Xeon® Silver 4123 Processor (11M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
COFFEE LAKE
N/A
I5-8300H
963136
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2175
963212
Intel® Xeon™ W-2175 Processor (19.25M Cache, 2.50 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
W-2170B
963214
Intel® Xeon® Processor W-2170B (19.25M Cache, 2.50 GHz) FC-LGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CELERON(R)
G4900
963375
Intel® Celeron® Processor G4900 (2M Cache, 3.10 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2124G
963428
Intel® Xeon® E-2124G Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2144G
963429
Intel® Xeon® E-2144G Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2174G
963430
Intel® Xeon® E-2174G Processor (8M Cache, up to 4.70 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2134
963443
Intel® Xeon® E-2134 Processor (8M Cache, up to 4.50 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2124
963447
Intel® Xeon® E-2124 Processor (8M Cache, up to 4.30 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2186G
963448
Intel® Xeon® E-2186G Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray
CDX-0003C.00017
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2176G
963450
Intel® Xeon® E-2176G Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2146G
963454
Intel® Xeon® E-2146G Processor (12M Cache, up to 4.50 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2126G
963464
Intel® Xeon® E-2126G Processor (12M Cache, up to 4.50 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2104G
963465
Intel® Xeon® Processor E-2104G (8M Cache, 3.20 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2136
963466
Intel® Xeon® E-2136 Processor (12M Cache, up to 4.50 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700T
963506
Intel® Core™ i7-8700T Processor (12M Cache, up to 4.00 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600
963534
Intel® Core™ i5-8600 Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600T
963537
Intel® Core™ i5-8600T Processor (9M Cache, up to 3.70 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400T
963540
Intel® Core™ i5-8400T Processor (9M Cache, up to 3.30 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5400
963543
Intel® Pentium® Gold G5400 Processor (4M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5400T
963566
Intel® Pentium® Gold G5400T Processor (4M Cache, 3.10 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500T
963592
Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8300
963643
Intel® Core™ i3-8300 Processor (8M Cache, 3.70 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8300T
963646
Intel® Core™ i3-8300T Processor (8M Cache, 3.20 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100T
963660
Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5600
963663
Intel® Pentium® Gold G5600 Processor (4M Cache, 3.90 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5500
963670
Intel® Pentium® Gold G5500 Processor (4M Cache, 3.80 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5500T
963678
Intel® Pentium® Gold G5500T Processor (4M Cache, 3.20 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CELERON(R)
G4920
963694
Intel® Celeron® Processor G4920 (2M Cache, 3.20 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CELERON(R)
G4900T
963697
Intel® Celeron® Processor G4900T (2M Cache, 2.90 GHz) FC-LGA14C, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON®
E-2176M
963717
Intel® Xeon® E-2176M Processor (12M Cache, up to 4.40 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8850H
963719
Intel® Core™ i7-8850H Processor (9M Cache, up to 4.30 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400H
963721
Intel® Core™ i5-8400H Processor (8M Cache, up to 4.20 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8174
963757
Intel® Xeon® Platinum 8174 Processor (33M Cache, 3.10 GHz) FC-LGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CELERON(R)
G4900
963823
Boxed Intel® Celeron® Processor G4900 (2M Cache, 3.10 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R) CELERON(R)
G4900
963825
Boxed Intel® Celeron® Processor G4900 (2M Cache, 3.10 GHz) FC-LGA14C, for China
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2187NT
964082
Intel® Xeon® D-2187NT Processor (22M Cache, 2.00 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2161I
964083
Intel® Xeon® D-2161I Processor (16.5M Cache, 2.20 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2163IT
964084
Intel® Xeon® D-2163IT Processor (16.5M Cache, 2.10 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2183IT
964085
Intel® Xeon® D-2183IT Processor (22M Cache, 2.20 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2146NT
964087
Intel® Xeon® D-2146NT Processor (11M Cache, 2.30 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2173IT
964088
Intel® Xeon® D-2173IT€Processor (19.25M Cache, 1.70 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2145NT
964089
Intel® Xeon® D-2145NT Processor (11M Cache, 1.90 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2143IT
964090
Intel® Xeon® D-2143IT Processor (11M Cache, 2.20 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2141I
964091
Intel® Xeon® D-2141I Processor (11M Cache, 2.20 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2123IT
964092
Intel® Xeon® D-2123IT Processor (8.25M Cache, 2.20 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2166NT
964093
Intel® Xeon® D-2166NT Processor (16.5M Cache, 2.00 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2177NT
964094
Intel® Xeon® D-2177NT Processor (19.25M Cache, 1.90 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2142IT
964095
Intel® Xeon® D-2142IT Processor (11M Cache, 1.90 GHz) FC-BGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2191
964672
Intel® Xeon® D-2191 Processor (24.75M Cache, 1.60 GHz) FC-BGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CELERON(R)
G4920
973459
Boxed Intel® Celeron® Processor G4920 (2M Cache, 3.20 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2176G
973773
Boxed Intel® Xeon® E-2176G Processor (12M Cache, 3.70 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2146G
974864
Boxed Intel® Xeon® E-2146G Processor (12M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2191
974910
Intel® Xeon® D-2191 Processor (24.75M Cache, 1.60 GHz) FC-BGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8559U
974938
Intel® Core™ i7-8559U Processor (8M Cache, up to 4.50 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8269U
974943
Intel® Core™ i5-8269U Processor (6M Cache, up to 4.20 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600
974956
Boxed Intel® Core™ i5-8600 Processor (9M Cache, up to 4.30 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
974957
Boxed Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8300
974959
Boxed Intel® Core™ i3-8300 Processor (8M Cache, 3.70 GHz) FC-LGA14C
CDX-0003C.00018
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5600
974960
Boxed Intel® Pentium® Gold G5600 Processor (4M Cache, 3.90 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5500
974961
Boxed Intel® Pentium® Gold G5500 Processor (4M Cache, 3.80 GHz) FC-LGA14C
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
6162
974994
Intel® Xeon® Platinum 6162 Processor (33M Cache, 1.90 GHz) FC-LGA14B, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
6122
974995
Intel® Xeon® Gold 6122 Processor (27.5M Cache, 1.80 GHz) FC-LGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
I9-8950HK
975241
Intel® Core™ i9-8950HK Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2186M
975245
Intel® Xeon® E-2186M Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8109U
975758
Intel® Core™ i3-8109U Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8259U
975759
Intel® Core™ i5-8259U Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600
975870
Boxed Intel® Core™ i5-8600 Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, for China
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
975871
Boxed Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, for China
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5500
975872
Boxed Intel® Pentium® Gold G5500 Processor (4M Cache, 3.80 GHz) FC-LGA14C, for China
1274
10nm
CANNON LAKE
INTEL (R) CORE (TM) I3
I3-8121U
975938
Intel® Core™ i3-8121U Processor (4M Cache, up to 3.20 GHz) FC-BGA16F, Tray
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
D-2191A
976094
Intel® Xeon® D-2191A Processor (24.75M Cache, 1.60 GHz) FC-BGA14B, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8700B
976523
Intel® Core™ i7-8700B Processor (12M Cache, up to 4.60 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500B
976526
Intel® Core™ i5-8500B Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400B
976531
Intel® Core™ i5-8400B Processor (9M Cache, up to 4.00 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5400
976952
Boxed Intel® Pentium® Gold G5400 Processor (4M Cache, 3.70 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
G5400
976953
Boxed Intel® Pentium® Gold G5400 Processor (4M Cache, 3.70 GHz) FC-LGA14C, for China
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2124G
977233
Boxed Intel® Xeon® E-2124G Processor (8M Cache, 3.40 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
E-2134
977235
Boxed Intel® Xeon® E-2134 Processor (8M Cache, 3.50 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
977399
Boxed Intel® Core™ i7+8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, includes Intel® Optane™ Memory (16GB)
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
977518
Boxed Intel® Core™ i5+8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, includes Intel® Optane™ Memory (16GB)
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
977519
Boxed Intel® Core™ i5+8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, includes Intel® Optane™ Memory (16GB)
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8706G
978295
Intel® Core™ i7-8706G Processor with Radeon™ Pro WX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8086K
978581
Boxed Intel® Core™ i7-8086K Processor (12M Cache, up to 5.00 GHz) FC-LGA14C
1273
14nm
DENVERTON
INTEL(R) ATOM(TM)
C3534
978654
[Missing External Name] FH82CM248
1273
14nm
DENVERTON
INTEL (R) PROCESSOR
C3336
979019
Intel Atom® Processor C3336 (4M Cache, 1.50 GHz) FC-BGA15C, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8086K
979349
Boxed Intel® Core™ i7-8086K Processor (12M Cache, up to 5.00 GHz) FC-LGA14C, for China
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8305G
979456
Intel® Core™ i5-8305G Processor with Radeon™ Pro WX Vega M GL graphics (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
MONTAGE(R) JINTIDE(R) C
C2460 1
980100
Montage® Jintide® C C2460 1 Processor (33M Cache, 2.10 GHz) FC-LGA14B, Tray
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980657
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
8124M
980660
Intel® Xeon® Platinum 8124M Processor (24.75M Cache, 3.00 GHz) FC-LGA14B, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8500Y
980666
Intel® Core™ i7-8500Y Processor (4M Cache, up to 4.20 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8200Y
980667
Intel® Core™ i5-8200Y Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) M
M3-8100Y
980672
Intel® Core™ m3-8100Y Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) M
M3-8100Y
980678
Intel® Core™ m3-8100Y Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I3
I3-8100B
981451
Intel® Core™ i3-8100B Processor (4M Cache, 3.60 GHz) FC-BGA14F, Tray
1272
14nm
WHISKEY LAKE
N/A
I7-8565U
982918
Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982922
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
SKY MEADOW
INTEL(R)XEON®
N/A
982924
SRV [SKY MEADOW] Processor 2.00 GHz, 33M Cache, FC-LGA14B, Tray, 205W, CM8067303405604
1272
14nm
SKY MEADOW
INTEL(R)XEON(R)
N/A
982925
SRV [SKY MEADOW] Processor 2.10 GHz, 22M Cache, FC-LGA14B, Tray, 180W, CM8067303409003
1272
14nm
CASCADE LAKE
INTEL(R) XEON(R) GOLD
6267
982945
1272
14nm
CASCADE LAKE
INTEL(R) XEON(R) PLATINUM
8263C
982995
1272
14nm
CASCADE LAKE
INTEL(R) XEON(R) GOLD
6261
982997
1273
14nm
APOLLO LAKE
INTEL(R) ATOM(TM)
A3920
983175
Intel Atom® Processor A3920 (2M Cache, up to 2.00 GHz) FC-BGA15C, Tray
1272
14nm
AMBER LAKE
INTEL (R) CORE (TM) I7
I7-8510Y
983287
Intel® Core™ i7-8510Y Processor (4M Cache, up to 4.30 GHz) FC-BGA14F, Tray
1272
14nm
AMBER LAKE
INTEL(R) CORE(TM) I5
I5-8310Y
983288
Intel® Core™ i5-8310Y Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
1272
14nm
AMBER LAKE
INTEL(R) CORE(TM) I5
I5-8210Y
983289
Intel® Core™ i5-8210Y Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
I9-9900K
983354
Intel® Core™ i9-9900K Processor (16M Cache, up to 5.00 GHz) FC-LGA14A, Tray
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-9700K
983355
Intel® Core™ i7-9700K Processor (12M Cache, up to 4.90 GHz) FC-LGA14A, Tray
CDX-0003C.00019
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-9600K
983356
Intel® Core™ i5-9600K Processor (9M Cache, up to 4.60 GHz) FC-LGA14A, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
I9-9900K
984503
Boxed Intel® Core™ i9-9900K Processor (16M Cache, up to 5.00 GHz) FC-LGA14A
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-9600K
984505
Boxed Intel® Core™ i5-9600K Processor (9M Cache, up to 4.60 GHz) FC-LGA14C
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-9700K
984509
Boxed Intel® Core™ i7-9700K Processor (12M Cache, up to 4.90 GHz) FC-LGA14A, for China
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-9600K
984512
Boxed Intel® Core™ i5-9600K Processor (9M Cache, up to 4.60 GHz) FC-LGA14A, for China
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
4417U
984527
Intel® Pentium® Processor 4417U (2M Cache, 2.30 GHz) FC-BGA14F, Tray
1272
14nm
WHISKEY LAKE
INTEL(R) PENTIUM(R)
5405U
984529
Intel® Pentium® Gold 5405U Processor (2M Cache, 2.30 GHz) FC-BGA14F, Tray
1272
14nm
WHISKEY LAKE
INTEL(R) CELERON(R)
4205U
984533
Intel® Celeron® Processor 4205U (2M Cache, 1.80 GHz) FC-BGA14F, Tray
1272
14nm
COFFEE LAKE
INTEL(R) CORE EVO(TM) I7
I7-9700K
985083
Boxed Intel® Core™ i7-9700K Processor (12M Cache, up to 4.90 GHz) FC-LGA14A
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1573N
985835
Intel® Xeon® Processor D-1573N (12M Cache, 2.70 GHz) FC-BGA14C, Tray
1272
14nm
BROADWELL
INTEL(R)XEON(R)
D-1563N
985836
Intel® Xeon® Processor D-1563N (12M Cache, 2.00 GHz) FC-BGA14C, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9980XE
986447
Intel® Core™ i9-9980XE Extreme Edition Processor (24.75M Cache, up to 4.50 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9960X
986448
Intel® Core™ i9-9960X X-series Processor (22M Cache, up to 4.50 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9940X
986449
Intel® Core™ i9-9940X X-series Processor (19.25M Cache, up to 4.50 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9920X
986450
Intel® Core™ i9-9920X X-series Processor (19.25M Cache, up to 4.50 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9900X
986451
Intel® Core™ i9-9900X X-series Processor (19.25M Cache, up to 4.50 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9820X
986452
Intel® Core™ i9-9820X X-series Processor (16.5M Cache, up to 4.20 GHz) FC-LGA14A, Tray
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-9800X
986453
Intel® Core™ i7-9800X X-series Processor (16.5M Cache, up to 4.50 GHz) FC-LGA14A, Tray
1272
14nm
CASCADE LAKE
INTEL(R) XEON(R) GOLD
6230
999C00
1272
14nm
CASCADE LAKE
INTEL(R) XEON(R) GOLD
6248
999C09
1272
14nm
CASCADE LAKE
INTEL(R) XEON(R) PLATINUM
8280L
999C16
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
I9-9900K
999AGF
Boxed Intel® Core™ i9-9900K Processor (16M Cache, up to 5.00 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-9800X
999AC3
Boxed Intel® Core™ i7-9800X X-series Processor (16.5M Cache, up to 4.40 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-9800X
999ACM
Boxed Intel® Core™ i7-9800X X-series Processor (16.5M Cache, up to 4.40 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9820X
999AC8
Boxed Intel® Core™ i9-9820X X-series Processor (16.5M Cache, up to 4.10 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9820X
999ACL
Boxed Intel® Core™ i9-9820X X-series Processor (16.5M Cache, up to 4.10 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9900X
999AC5
Boxed Intel® Core™ i9-9900X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9900X
999ACK
Boxed Intel® Core™ i9-9900X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9920X
999AC6
Boxed Intel® Core™ i9-9920X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9920X
999ACJ
Boxed Intel® Core™ i9-9920X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9940X
999AC9
Boxed Intel® Core™ i9-9940X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9940X
999ACG
Boxed Intel® Core™ i9-9940X X-series Processor (19.25M Cache, up to 4.40 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9960X
999AC7
Boxed Intel® Core™ i9-9960X X-series Processor (22M Cache, up to 4.40 GHz) FC-LGA14A
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9960X
999ACF
Boxed Intel® Core™ i9-9960X X-series Processor (22M Cache, up to 4.40 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9980XE
999ACD
Boxed Intel® Core™ i9-9980XE Processor Extreme Edition (24.75M Cache, up to 4.40 GHz) FC-LGA14A, for China
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I9
I9-9980XE
999AD1
Boxed Intel® Core™ i9-9980XE Processor Extreme Edition (24.75M Cache, up to 4.40 GHz) FC-LGA14A
1273
14nm
LEWISBURG
INTEL(R) C621
949752
Intel® EY82C621 Platform Controller Hub
1273
14nm
LEWISBURG
N/A
951425
Intel® EY82C621 Platform Controller Hub
1273
14nm
LEWISBURG
N/A
951591
[Missing External Name] EY82075PCH
1273
14nm
LEWISBURG
INTEL(R) C628
953061
Intel ® C628 chipset (Intel ® EY82C628 PCH)
1273
14nm
LEWISBURG
INTEL(R) C627
953062
Intel ® C627 chipset (Intel ® EY82C627 PCH)
1273
14nm
LEWISBURG
INTEL(R) C621
953098
Intel® EY82C621 Platform Controller Hub
1273
14nm
LEWISBURG
INTEL(R) C621
953999
Intel® EY82C621 Platform Controller Hub
1273
14nm
LEWISBURG
INTEL(R) C621
954858
Intel® EY82C621 Platform Controller Hub
1273
14nm
LEWISBURG
INTEL(R) C628
954859
Intel ® C628 chipset (Intel ® EY82C628 PCH)
1273
14nm
LEWISBURG
INTEL(R) C627
954860
Intel ® C627 chipset (Intel ® EY82C627 PCH)
1273
14nm
LEWISBURG
INTEL(R) C626
954861
Intel ® C626 chipset (Intel ® EY82C626 PCH)
1273
14nm
LEWISBURG
INTEL(R) C625
954862
Intel ® C625 chipset (Intel ® EY82C625 PCH)
1273
14nm
LEWISBURG
INTEL(R) C622
954863
Intel ® C622 chipset (Intel ® EY82C622 PCH)
1273
14nm
LEWISBURG
INTEL(R) C624
954864
Intel ® C624 chipset (Intel ® EY82C624 PCH)
1273
14nm
LEWISBURG
INTEL(R) C621
957625
Intel® EY82C621 Platform Controller Hub
1273
14nm
LEWISBURG
INTEL(R) C628
957626
Intel ® C628 chipset (Intel ® EY82C628 PCH)
CDX-0003C.00020
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1273
14nm
LEWISBURG
INTEL(R) C627
957627
Intel ® C627 chipset (Intel ® EY82C627 PCH)
1273
14nm
LEWISBURG
INTEL(R) C626
957628
Intel ® C626 chipset (Intel ® EY82C626 PCH)
1273
14nm
LEWISBURG
INTEL(R) C625
957629
Intel ® C625 chipset (Intel ® EY82C625 PCH)
1273
14nm
LEWISBURG
INTEL(R) C622
957630
Intel ® C622 chipset (Intel ® EY82C622 PCH)
1273
14nm
LEWISBURG
INTEL(R) C621
957631
Intel® EY82C621 Platform Controller Hub
1273
14nm
LEWISBURG
INTEL(R) C624
957632
Intel ® C624 chipset (Intel ® EY82C624 PCH)
1273
14nm
CANNON LAKE
N/A
964246
Intel® FH82Q370 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
964247
Intel® FH82H370 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
964256
[Missing External Name] FH82Z390
1273
14nm
CANNON LAKE
N/A
964265
Intel® FH82B360 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
964267
[Missing External Name] FH82H310
1273
14nm
CANNON LAKE
N/A
964268
Intel® FH82C246 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
964269
Intel® FH82HM370 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
964270
Intel® FH82C242 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
964271
Intel® FH82QM370 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
964272
Intel® FH82CM246 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
964273
Intel® FH82QMS380 Platform Controller Hub
1273
14nm
CANNON LAKE
N/A
978829
Intel® FH82H310 Platform Controller Hub
1275
10nm
SHUTTLE CREEK
N/A
951940
[Missing External Name] LUZONTC1
1273
14nm
CHERRY TRAIL
INTEL (R) PROCESSOR
N/A
936018
CE [CHERRY TRAIL] Processor ULV 1.60 GHz, 2M Cache, FC-MB6T, Tray, N/AW, GB8066401885800
1273
14nm
CHERRY TRAIL
GENUINE INTEL (R) CPU
Z8700
940953
Intel Atom® x7-Z8700 Processor (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8500
940954
Intel Atom® x5-Z8500 Processor (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3150
942230
Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3050
942232
Intel® Celeron® Processor N3050 (2M Cache, up to 2.16 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
N3700
942599
Intel® Pentium® Processor N3700 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3150
942600
Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3050
942602
Intel® Celeron® Processor N3050 (2M Cache, up to 2.16 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3000
942603
Intel® Celeron® Processor N3000 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray
1273
14nm
CHERRY TRAIL
GENUINE INTEL (R) CPU
Z8700
943102
Intel Atom® x7-Z8700 Processor (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8300
943165
Intel Atom® x5-Z8300 Processor (2M Cache, up to 1.84 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
N3700
943327
Intel® Pentium® Processor N3700 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3150
943328
Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3050
943329
Intel® Celeron® Processor N3050 (2M Cache, up to 2.16 GHz) FC-BGA15F, Tray
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8100P
944058
Intel Atom® x5-Z8100P Processor (2M Cache, up to 1.04 GHz) FC-MB6T, T&R
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
944573
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8500
944708
Intel Atom® x5-Z8500 Processor (2M Cache, up to 2.24 GHz) FC-BGA15F, T&R
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
944993
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
J3060
944995
Intel® Celeron® Processor J3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
1273
14nm
CHERRY TRAIL
GENUINE INTEL (R) CPU
Z8750
945048
Intel Atom® x7-Z8750 Processor (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
946849
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
CHERRY TRAIL
GENUINE INTEL (R) CPU
Z8750
947016
Intel Atom® x7-Z8750 Processor (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8550
947017
Intel Atom® x5-Z8550 Processor (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
N3710
947020
Intel® Pentium® Processor N3710 (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3010
947021
Intel® Celeron® Processor N3010 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
J3710
947024
Intel® Pentium® Processor J3710 (2M Cache, up to 2.64 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
J3060
947025
Intel® Celeron® Processor J3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
J3160
947026
Intel® Celeron® Processor J3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8350
947027
Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8330
947028
Intel Atom® x5-Z8330 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray
1273
14nm
BRASWELL
INTEL(R) ATOM(TM)
E8000
947286
Intel Atom® x5-E8000 Processor (2M Cache, up to 2.00 GHz) FC-BGA15F, Tray
CDX-0003C.00021
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
INTEL
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8550
947827
Intel Atom® Processor Z8550 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
947911
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
948716
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
949226
Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service)
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
949336
Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
949870
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
949871
Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service)
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
949874
Intel® Puma™ 7 SoC CE2712M DOCSIS3.1 Entry Level Networking GW with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
950572
Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
951881
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952283
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952322
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952331
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952346
Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service)
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952347
Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952348
Intel® Puma™ 7 SoC CE2712M DOCSIS3.1 Entry Level Networking GW with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952485
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952487
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952488
Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952489
Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service)
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952492
Intel® Puma™ 7 SoC CE2712M DOCSIS3.1 Entry Level Networking GW with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952555
Intel® Puma™ 7 SoC CE2703i DOCSIS3.1 Modem/eMTA (5Gbps service) industrial
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
952561
Intel® Puma™ 7 SoC CE2753 DOCSIS3.1 Enterprise Services industrial
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961654
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961655
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961656
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961657
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961659
Intel® Puma™ 7 SoC CE2712M DOCSIS3.1 Entry Level Networking GW with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961661
Intel® Puma™ 7 SoC CE2712 DOCSIS3.1 Entry Level Networking GW
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961663
Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service)
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961667
Intel® Puma™ 7 SoC CE2703i DOCSIS3.1 Modem/eMTA (5Gbps service) industrial
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961668
Intel® Puma™ 7 SoC CE2753 DOCSIS3.1 Enterprise Services industrial
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
961669
Intel® Puma™ 7 SoC CE2753 DOCSIS3.1 Enterprise Services industrial
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
962685
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
963196
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
975635
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway with MOCA
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
975636
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
975639
Intel® Puma™ 7 SoC CE2703 DOCSIS3.1 Modem/eMTA (5Gbps service)
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
975641
Intel® Puma™ 7 SoC CE2703i DOCSIS3.1 Modem/eMTA (5Gbps service) industrial
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
975642
Intel® Puma™ 7 SoC CE2753 DOCSIS3.1 Enterprise Services industrial
1273
14nm
COUGAR MOUNTAIN
INTEL(R) PUMA(TM)
975644
Intel® Puma™ 7 SoC CE2752 DOCSIS3.1 Services & All-IP Video Gateway
CDX-0003C.00022
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
NX.GTMAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GTMAA.002
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NT.LEPAA.001
CI78550U
WINDOWS TABLET-NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q1TAA.001
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GNZAA.002
CM3855U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
3855U
944335
Intel® Celeron® Processor 3855U (2M Cache, 1.60 GHz) FC-BGA14C, Tray
NX.GC2AA.016
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GVFAA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GP2AA.003
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NT.LCWAA.002
ATMZ8350
WINDOWS TABLET-NB
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8350
947027
Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray
NX.GC2AA.017
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GC2AA.010
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GP7AA.002
CI57200U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
951957
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GG5AA.005
CI37100U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
951959
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
NX.GRMAA.005
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.G54AA.018
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NT.LCQAA.004
ATMZ8350
WINDOWS TABLET-NB
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8350
947027
Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray
NX.GHJAA.009
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GHJAA.007
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GC2AA.007
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GHJAA.002
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GTSAA.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GF4AA.004
CI36006U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
NX.GP4AA.003
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GTQAA.001
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.G54AA.002
ICQN3150
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3150
942600
Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray
NX.GR7AA.007
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VDCAA.016
CI36100U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100U
944334
Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray
NX.GSFAA.001
CI58250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GNTAA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.G4XAA.001
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GNTAA.010
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GMWAA.004
7Y75
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
951956
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
N9.VHKWW.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GRMAA.008
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NT.LCQAA.005
ATMZ8350
WINDOWS TABLET-NB
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8350
947027
Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray
NX.GP6AA.004
CI36100U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100U
944334
Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray
NX.GP6AA.003
CI56200U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
NX.GM8AA.001
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GPZAA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GSUAA.001
CI36006U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
NX.G4XAA.002
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GNPAA.021
CI36006U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
NX.GS6AA.001
CI36006U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
NX.GS5AA.001
CI36006U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
NX.GNPAA.022
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GS6AA.002
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GS5AA.002
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GHJAA.008
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GRMAA.002
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GRMAA.006
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.GTPAA.003
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GSYAA.001
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GR5AA.002
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NH.Q29AA.003
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GFTAA.011
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GR7AA.001
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
N9.GV2WW.002
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
N9.GVFWW.001
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
N9.GV3WW.002
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.GVJAA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.VG0AA.001
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NH.Q2LAA.001
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GT0AA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GN2AL.006
7Y54
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7Y54
951960
Intel® Core™ i5-7Y54 Processor (4M Cache, up to 3.20 GHz) FC-BGA14F, Tray
NX.GHJAA.006
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GR7AL.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GUWAA.004
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GQJAA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
ACER
CDX-0004C.0001
CDX-0004C
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
N9.GWGWW.005
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
N9.GWGWW.007
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.VCYAA.001
CI56300U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6300U
944340
Intel® Core™ i5-6300U Processor (3M Cache, up to 3.00 GHz) FC-BGA14C, Tray
NX.GQGAA.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q2YAA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.EFJWW.004
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GULAA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NH.Q2QAA.006
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GNPAA.001
CI37100U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
953354
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
NX.GS1AA.001
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NH.Q2BAA.003
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NH.Q29AA.002
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GL2AA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GM9AA.001
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NT.LDRAA.003
PQCN4200
WINDOWS TABLET-NB
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.G55AA.005
ICQN3150
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3150
942600
Intel® Celeron® Processor N3150 (2M Cache, up to 2.08 GHz) FC-BGA15F, Tray
NX.GP6AA.001
CM3855U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
3855U
944335
Intel® Celeron® Processor 3855U (2M Cache, 1.60 GHz) FC-BGA14C, Tray
N9.EFJWW.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H0SWW.003
CM3865U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3865U
953360
Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray
NX.GP4AA.012
CI36006U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
NX.GC7AA.001
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GTPAA.008
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GNUAL.013
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NT.LCDAL.010
CI36100U
WINDOWS TABLET-NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100U
944334
Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray
NX.GS5AL.013
CI37100U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
953354
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
NX.GFSAL.004
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GNSAL.008
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NH.Q2BAL.007
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GWHAL.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GT1AL.001
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q2RAL.023
CI57300HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NH.Q2RAL.014
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NH.Q29AL.009
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GC2AA.009
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GHJAA.004
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.VDKAA.009
CI56200U
Notebook
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
NX.GC2AA.013
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NH.Q2RAA.013
CI57300HQ
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NX.GR7AA.006
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GTCAA.012
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GSXAA.004
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GQGAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GL2AA.003
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GPTAA.004
ICQN3450
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.GQJAA.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GP8AA.005
CI57300HQ
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NX.GH4AA.003
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.GTCAA.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GSXAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GTCAA.003
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.G4XAA.004
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GTCAA.006
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GSXAA.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GR7AA.004
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GR5AA.005
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.G4XAA.003
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GP1AA.001
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.GM8AA.004
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NT.GDQAA.006
CI36100U
Windows Tablet -NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100U
944334
Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray
N9.GY0WW.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q1ZAA.001
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GNTAA.005
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.G55AA.018
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NH.Q2RAA.001
CI57300HQ
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NX.SHXAA.006
ICQN3450
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
N9.H1WWW.001
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.GUNWW.003
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NH.Q2QAA.015
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
CDX-0004C.0002
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
NH.Q28AA.005
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NT.LDSAA.001
CI57200U/H22
Windows Tablet -NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NH.Q2RAA.016
CI57300HQ
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
N9.GUHWW.001
CI77Y75/H22
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
953348
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
NX.G55AA.017
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.G55AA.019
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GM8AA.005
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GM9AA.004
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.G54AA.012
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GTMAA.005
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.SHXAA.005
ICQN3450
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.G55AA.006
ICDN3050
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3050
942602
Intel® Celeron® Processor N3050 (2M Cache, up to 2.16 GHz) FC-BGA15F, Tray
NX.G54AA.016
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GZRAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GSKAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GTPAA.001
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GSYAA.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q2RAA.002
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GRYAA.001
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.GUHWW.002
CI77Y75/H22
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
953348
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
N9.GZAWW.002
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GPGAA.002
CI57300HQ
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NH.Q1EAA.003
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GUKAA.002
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GULAA.002
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NT.LCDAA.003
CI36100U
Windows Tablet -NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100U
944334
Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray
NX.GUKAA.001
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NH.Q2RAA.014
CI57300HQ
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
N9.VHRWW.001
ICQN4100
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GU7AA.001
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GUHAA.001
CI77Y75/H22
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
953348
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
NX.GR4AL.010
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GP2AA.002
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NH.Q1XAA.003
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
N9.Q3FWW.001
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
N9.H1LWW.003
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NH.Q2YAA.002
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GTPAA.007
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GZRAA.002
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GTPAA.006
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GYAAA.001
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.VD4AA.016
CI56200U
Notebook
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
NH.Q2YAA.004
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.G55AA.010
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GXZAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VCGAA.037
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
N9.H8WWW.001
ICQN4100
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.EFJAA.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H1WAA.001
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H93WW.002
ICDN4000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
N9.H99WW.001
PQCN5000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
N9.H8VWW.002
ICDN4000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
N9.H91WW.002
ICQN4100
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
N9.H98WW.001
CI78500Y
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8500Y
980666
Intel® Core™ i7-8500Y Processor (4M Cache, up to 4.20 GHz) FC-BGA14F, Tray
N9.H8YWW.002
PQCN5000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
N9.H99WW.003
PQCN5000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.EFJAA.010
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GH4AA.001
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NT.LCDAA.001
CI56200U
Windows Tablet -NB
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
N9.HAWWW.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.HB0WW.002
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.HB3WW.001
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.HAZWW.001
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GY0AA.001
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.VHSAA.002
ICDN4000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
N9.H98WW.002
CI78500Y
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8500Y
980666
Intel® Core™ i7-8500Y Processor (4M Cache, up to 4.20 GHz) FC-BGA14F, Tray
NX.GWGAA.001
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
N9.HAWWW.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
CDX-0004C.0003
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
N9.HB0WW.004
PMD4417U
Notebook
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
4417U
984527
Intel® Pentium® Processor 4417U (2M Cache, 2.30 GHz) FC-BGA14F, Tray
N9.HDEWW.001
CI58265U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NH.Q3DAA.001
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GMBAA.001
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.VHQAA.003
PQCN5000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.VHRAA.001
ICDN4000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NH.Q28AA.006
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.VDKAA.192
CI56200U
Notebook
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
N9.H3UWW.002
CI38145U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.GYSWW.001
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q1FAA.001
CI77820HK
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7820HK
952955
Intel® Core™ i7-7820HK Processor (8M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.H69WW.001
CI58265U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GTCAA.019
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GR7AA.003
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GSXAA.006
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GNPAA.009
CI57200U/H22
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.VDKAA.186
CI56200U
Notebook
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
NX.GR7AA.011
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GSUAL.003
CI77500U/H22
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
953352
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NX.GP4AL.015
CI77500U/H22
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
953352
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NX.H3UAA.001
CI58265U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.H69WW.003
CI78565U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I7-8565U
982918
Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray
NX.H7QAA.001
CI58265U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.VCGAA.015
ICQN3160
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.VCHAA.019
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NH.Q1YAA.002
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
N9.VK8WW.002
CI78565U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I7-8565U
982918
Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray
N9.VK9WW.002
CI58265U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.Q52WW.005
CI78705G
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8705G
961154
Intel® Core™ i7-8705G Processor with Radeon™ RX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3FAA.001
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NT.LCQAA.003
ATMZ8350
Windows Tablet -NB
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8350
947027
Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray
NX.GZAAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.HD4WW.001
CI38145U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.VK8WW.004
CI78565U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I7-8565U
982918
Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray
N9.Q52WW.003
CI78705G
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8705G
961154
Intel® Core™ i7-8705G Processor with Radeon™ RX Vega M GL graphics (8M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GP4AA.006
CI57200U/H22
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GP5AA.004
CI57200U/H22
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GTBAA.001
CI57200U/H22
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GR7AA.012
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GR7AA.013
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.GTQAA.002
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
N9.VJZWW.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GZRAA.006
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q3NAA.003
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.VG0AA.004
ICQN3450
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
N9.VJCWW.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H0DAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.VJDWW.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.GXCAA.001
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.GXBAA.003
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GNJAA.002
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
N9.GXNWW.001
CM3965U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3965U
953361
Intel® Celeron® Processor 3965U (2M Cache, 2.20 GHz) FC-BGA14F, Tray
N9.H09WW.001
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
N9.H0AWW.002
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GZAAA.002
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GTCAA.020
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GNPAA.017
CI37100U/H22
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
953354
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
NX.GNPAA.013
CI57200U/H22
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
N9.H0KWW.002
ICQN3450
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
N9.H0KWW.003
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.SHXAA.003
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NH.Q28AA.001
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GHJAA.010
ICDN3060
Notebook
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
N9.EFJWW.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H0SWW.002
CM3865U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3865U
953360
Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray
NX.GR7AA.008
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q3ZAA.001
CI58300H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q3YAA.001
CI58300H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
CDX-0004C.0004
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
NX.H09AA.001
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GSFAA.003
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GRDAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H1LWW.001
PQCN4200
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
N9.H1QWW.002
ICQN3450
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.GVZAA.003
ICDN4000
Notebook
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NH.Q28AL.008
CI77700HQ
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GTQAA.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H0KAA.003
ICQN3450
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.GNPAA.005
CI37100U/H22
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
953354
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
NX.GVNAL.001
CI57200U/H22
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GR4AL.008
ICDN3350
Notebook
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GYYAL.002
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.GXBAL.001
CI58300H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
N9.Q3PWW.001
CI98950HK
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
I9-8950HK
975241
Intel® Core™ i9-8950HK Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray
N9.VJSWW.001
CI58265U
Notebook
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.Q53WW.001
CI58300H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
N9.Q5RWW.001
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GZRAA.008
CI38130U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGGAA.004
CI77500U/H22
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
953352
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NH.GXEAA.005
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.H1CAA.001
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GTPAA.012
CI78550U
Notebook
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q3ZAA.003
CI58300H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q3YAA.004
CI78750H
Notebook
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GS1AA.003
CI57200U/H22
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.H37AA.002
CI58250U
Notebook
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.Q4HWW.001
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
N9.H14WW.002
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GXGAA.002
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.H54AA.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.H87AA.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.VJ7WW.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GZLAA.001
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.GZGAA.001
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.H5CAL.002
CI38145U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.H8AAA.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.Q4WWW.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
N9.Q4WWW.002
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.VFXAA.007
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.GYLAL.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.Q5BWW.001
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
N9.Q4VWW.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.VCGAA.006
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GR7AA.002
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GNWAA.001
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GV2AA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GVWAA.001
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
N9.Q55WW.001
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q50AA.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q4WAA.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3FAA.004
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.GXEAA.003
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.GXCAA.002
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.GXDAA.002
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.GXBAA.006
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GRMAA.009
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
N9.Q4WWW.003
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GTPAA.011
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VCSAA.002
CI76500U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6500U
944339
Intel® Core™ i7-6500U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray
N9.Q4VWW.004
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3ZAA.002
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q3FAA.005
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GZ9AA.001
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GPTAA.001
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
N9.Q5FWW.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GPTAA.008
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
N9.Q5DWW.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
CDX-0004C.0005
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
N9.Q5BWW.002
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
N9.HDRWW.001
CI38145U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.H62AA.008
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.HE4WW.001
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NX.GUHAA.002
CI77Y75/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
953348
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
NH.Q4AAL.003
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q4AAL.004
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.H1SAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GNPAL.038
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.GR4AL.006
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GR5AL.005
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.VGTAA.003
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGTAA.004
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.GZGWW.001
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.VGTAA.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGTAA.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GUWAL.002
CI36006U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
NX.VGUAA.003
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGUAA.004
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGUAA.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGUAA.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GC2AA.019
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GSFAA.004
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GPTAA.011
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NH.Q3NAA.005
CI98950HK
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
I9-8950HK
975241
Intel® Core™ i9-8950HK Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray
NX.GNPAA.004
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GXZAA.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H0AAA.001
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NH.Q2YAA.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q3FAA.006
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3DAA.005
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GXGAA.003
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.GY3AA.003
PQCN3710
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
N3710
947020
Intel® Pentium® Processor N3710 (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray
NX.GTMAA.004
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.H2LAL.002
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q4AAL.007
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.H1SAA.002
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GSYAA.007
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H37AA.001
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GSYAA.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H2QAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q2KAL.002
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GC2AA.021
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
N9.GZCWW.001
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q2LAA.002
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.H2MAL.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H2MAL.005
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q3NAA.007
CI98950HK
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
I9-8950HK
975241
Intel® Core™ i9-8950HK Processor (12M Cache, up to 4.80 GHz) FC-BGA14F, Tray
NX.GY0AL.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GT1AL.003
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.GXBAL.002
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NT.LDSAL.003
CI57200U/H22
WINDOWS TABLET-NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NH.Q4DAA.001
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GTMAA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q3NAA.006
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GYYAA.002
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GTPAA.013
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GZAAA.004
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GYGAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.GXCAA.003
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3ZAA.005
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3ZAA.006
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.H2LAL.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H2LAL.004
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.H37AA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GXGAA.005
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.H38AA.002
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H38AA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
CDX-0004C.0006
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
NX.GNPAA.003
CI37100U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100U
953354
Intel® Core™ i3-7100U Processor (3M Cache, 2.40 GHz) FC-BGA14F, Tray
NX.H0UAA.003
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NH.Q3ZAA.007
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GXGAA.007
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NH.Q3EAA.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q4CAA.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.VFUAA.005
CI37130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7130U
958406
Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray
NX.H3YAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H67WW.001
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.H3FAL.002
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H0UWW.001
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
N9.GNLWW.001
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
N9.Q3LWW.001
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
N9.Q3DWW.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
N9.GY3WW.001
PQCN3710
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
N3710
947020
Intel® Pentium® Processor N3710 (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray
NX.GNWAA.002
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.H1SAA.003
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q4AAL.008
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.H3GAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NT.LDTAA.002
CI37130U
WINDOWS TABLET-NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7130U
958406
Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray
NT.LDTAA.003
CI57200U/H22
WINDOWS TABLET-NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GZBAA.001
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GZ9AA.002
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.H1MAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H18WW.001
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H6GWW.002
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NH.Q3YAA.005
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3ZAA.004
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
N9.H60WW.004
CI38145U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GP3AA.002
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
N9.H7KWW.002
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.VGGAA.005
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
N9.H6NWW.002
CI38145U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NH.Q4CAA.002
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
N9.H6AWW.001
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NH.Q3YAA.003
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
N9.H62WW.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NH.Q2YAA.006
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.VD2AA.001
CI76500U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
I7-6500U
944339
Intel® Core™ i7-6500U Processor (4M Cache, up to 3.10 GHz) FC-BGA14C, Tray
NX.GNTAL.012
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.VGTAA.013
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GZRAA.012
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GJEAA.001
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GPLAL.007
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GVZAA.004
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NX.H2AAL.001
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.GNPAL.015
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.H2NAL.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q4AAL.009
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q4WAA.002
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GQGAA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGGAA.001
CI77500U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
953352
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NX.VCSAA.001
CI56200U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
NX.EFJAA.001
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.EFJAA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H1CAL.004
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.H2LAL.007
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.VCYAA.009
CI56200U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
NX.VDKAA.196
CI56200U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
NT.LDSAA.007
CI57200U/H22
WINDOWS TABLET-NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GL2AA.005
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GVZAA.005
ICQN4100
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.VGGAA.006
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.VGGAA.007
CI77500U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
953352
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NX.GR7AA.017
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GR7AA.015
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.H0DAA.003
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.VFXAA.009
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
CDX-0004C.0007
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
NX.GPTAA.002
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.GP0AA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.VGTAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GSFAA.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.G4XAA.005
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.H0UAA.005
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NH.GTQAA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GXZAA.010
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GVZAA.006
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NH.GXCAA.004
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3FAA.007
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q2KAA.001
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.VGGAA.011
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.VGGAA.012
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NT.LDSAA.002
CI57200U/H22
WINDOWS TABLET-NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NH.Q4HAA.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GRMAA.011
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NH.GXDAA.004
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.GXDAA.003
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q3YAA.006
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.VGVAA.001
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGVAA.002
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VGVAA.003
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.H1WAA.002
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GTCAA.023
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.VHJAA.004
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VHJAA.005
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.VHJAA.003
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GVWAA.002
ICQN4100
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GW5AA.001
ICQN4100
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GW4AA.001
ICQN4100
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H37AA.005
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H4QAA.002
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H47AA.002
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H47AA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H4QAA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GVZAA.007
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.GS3AA.003
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GE8AA.003
CI56200U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
I5-6200U
944338
Intel® Core™ i5-6200U Processor (3M Cache, up to 2.80 GHz) FC-BGA14C, Tray
NX.GNSAL.003
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GNSAL.015
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GTGAL.013
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GTHAL.017
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H2BAL.005
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.H2BAL.007
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.H2BAL.006
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.H2AAL.005
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.H1PAL.004
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NH.Q3FAL.007
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q4HAL.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.H1SAL.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GUWAL.009
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
N9.GUMWW.004
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NH.Q3NAL.008
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GZRAA.010
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H5UAA.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GZRAA.011
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GY1AA.001
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H37AA.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GXZAA.011
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GNZAA.001
CM3855U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
3855U
944335
Intel® Celeron® Processor 3855U (2M Cache, 1.60 GHz) FC-BGA14C, Tray
NX.GUJAA.001
CI77Y75/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
953348
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
NX.H2AAA.001
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
N9.GWGWW.008
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.GWGAA.002
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.GWGAA.003
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NT.LDSAA.003
CI57200U/H22
WINDOWS TABLET-NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NT.LDRAA.004
PQCN4200
WINDOWS TABLET-NB
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
CDX-0004C.0008
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
NX.H60AA.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.H62AA.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.H2AAL.002
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.VGVAA.004
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GXGAA.009
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NH.GXCAA.005
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3NAL.007
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.H0UAA.006
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NH.Q3DAL.009
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.GXCAA.006
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.H0UAA.004
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NT.LDRAA.002
PQCN4200
WINDOWS TABLET-NB
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
N9.HB0WW.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GT0AA.001
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H1LAA.001
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.GTCAA.025
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.EFJAA.004
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H3UAA.002
CI78565U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I7-8565U
982918
Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray
NX.H3WAA.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GRMAA.004
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.H1QAA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H8AAA.003
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GC2AA.005
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GC7AA.003
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GK4AA.025
CI57200U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
951957
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.VG0AA.002
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.H89AA.003
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.H89AA.004
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.EFJWW.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H7QAA.002
CI78565U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I7-8565U
982918
Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray
N9.H92WW.001
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
N9.H1WWW.002
CI38130U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-8130U
963178
Intel® Core™ i3-8130U Processor (4M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H09WW.003
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H4BAA.002
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H4BAA.003
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.H1LAA.002
ICQN3450
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3450
951833
Intel® Celeron® Processor N3450 (2M Cache, up to 2.20 GHz) FC-BGA15F, Tray
NX.H1LAA.003
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.GY3AL.003
ICDN3060_OFF
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
951881
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GY3AL.004
ICDN3060_OFF
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
951881
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.H2BAL.015
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NX.GYGAL.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NH.Q3MAL.010
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GWGAA.004
PQCN4200
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
N4200
951830
Intel® Pentium® Processor N4200 (2M Cache, up to 2.50 GHz) FC-BGA15F, Tray
NX.H3WAA.002
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GSWAA.004
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H8AAA.004
CI78565U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I7-8565U
982918
Intel® Core™ i7-8565U Processor (8M Cache, up to 4.60 GHz) FC-BGA14F, Tray
NH.Q4QAA.001
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GXZAA.012
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H64AA.001
PQCN3710
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
N3710
947020
Intel® Pentium® Processor N3710 (2M Cache, up to 2.56 GHz) FC-BGA15F, Tray
NX.GXZAA.013
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H89AA.006
CI38145U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.G4XAA.006
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.H89AA.005
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GNSAL.021
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GNPAL.037
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.GS6AL.026
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.GNPAL.034
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.GM8AA.006
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.GR4AL.012
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
N9.G55WW.010
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.VGTAA.011
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GR4AL.007
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.EFJAA.005
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H1WAA.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GVWAA.003
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NT.LDTAA.006
CI77500U/H22
WINDOWS TABLET-NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
953352
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NX.GR7AA.014
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GUJAL.003
CI77Y75/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
953348
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
CDX-0004C.0009
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
NX.GTMAL.002
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.VCGAL.013
ICQN3160
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3160
947023
Intel® Celeron® Processor N3160 (2M Cache, up to 2.24 GHz) FC-BGA15F, Tray
NX.GUJAL.002
CI77Y75/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7Y75
953348
Intel® Core™ i7-7Y75 Processor (4M Cache, up to 3.60 GHz) FC-BGA14F, Tray
NX.GV2AA.002
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NT.LCQAA.006
ATMZ8350
WINDOWS TABLET-NB
1273
14nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Z8350
947027
Intel Atom® x5-Z8350 Processor (2M Cache, up to 1.92 GHz) FC-BGA15F, Tray
NX.H62AA.003
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.H99WW.005
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NX.EFJAA.009
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H89AA.007
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.VHUAA.002
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NX.H4CAA.003
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
N9.HB0WW.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
N9.H94WW.003
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
N9.H90WW.002
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NX.H93AA.001
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NX.H99AA.002
ICQN4100
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H4EAA.001
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.VHTAA.001
ICQN4100
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GZJAA.001
ICQN4100
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4100
961639
Intel® Celeron® N4100 Processor (4M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H9FAA.001
CI37020U23
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
960019
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.H8YAA.001
ICDN4000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
N4000
961640
Intel® Celeron® N4000 Processor (4M Cache, up to 2.60 GHz) FC-BGA15F, Tray
NX.GXUAA.002
PQCN5000
NOTEBOOK
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
N5000
961638
Intel® Pentium® Silver N5000 Processor (4M Cache, up to 2.70 GHz) FC-BGA15F, Tray
NX.H38AA.006
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GN3AA.001
ICDN3060
NOTEBOOK
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
N3060
947022
Intel® Celeron® Processor N3060 (2M Cache, up to 2.48 GHz) FC-BGA15F, Tray
NX.H4CAA.002
CI58265U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I5-8265U
982921
Intel® Core™ i5-8265U Processor (6M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.VGQAA.002
CI78550U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GZ9AA.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.H89AA.008
CI38145U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GTJAA.001
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H16AA.002
CI38145U
NOTEBOOK
1272
14nm
WHISKEY LAKE
N/A
I3-8145U
980656
Intel® Core™ i3-8145U Processor (4M Cache, up to 3.90 GHz) FC-BGA14F, Tray
NX.GTGAL.007
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GNSAL.014
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.GNPAL.008
CI36006U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6006U
950664
Intel® Core™ i3-6006U Processor (3M Cache, 2.00 GHz) FC-BGA14C, Tray
NX.GPAAL.004
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NH.Q2RAL.007
CI57300HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NH.Q2RAL.011
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NH.Q2BAL.009
CI57300HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NH.Q2BAL.008
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NH.Q2RAL.029
CI57300HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7300HQ
952959
Intel® Core™ i5-7300HQ Processor (6M Cache, up to 3.50 GHz) FC-BGA14F, Tray
NH.Q2RAL.028
CI77700HQ
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700HQ
952957
Intel® Core™ i7-7700HQ Processor (6M Cache, up to 3.80 GHz) FC-BGA14F, Tray
NX.GNPAL.005
CI57200U/H22
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7200U
953353
Intel® Core™ i5-7200U Processor (3M Cache, up to 3.10 GHz) FC-BGA14F, Tray
NH.Q3MAL.004
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NH.Q3LAL.003
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NH.Q3FAL.001
CI78750H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
I7-8750H
963718
Intel® Core™ i7-8750H Processor (9M Cache, up to 4.10 GHz) FC-BGA14F, Tray
NX.GTGAL.014
ICDN3350
NOTEBOOK
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
N3350
951834
Intel® Celeron® Processor N3350 (2M Cache, up to 2.40 GHz) FC-BGA15F, Tray
NX.H2BAL.014
CI37020UF
NOTEBOOK
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7020U
959164
Intel® Core™ i3-7020U Processor (3M Cache, 2.30 GHz) FC-BGA14F, Tray
NX.H23AL.004
CI58300H
NOTEBOOK
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8300H
963720
Intel® Core™ i5-8300H Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
NX.GWTAL.003
CI58250U
NOTEBOOK
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
NX.GDDAL.002
CI36100U
NOTEBOOK
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
I3-6100U
944334
Intel® Core™ i3-6100U Processor (3M Cache, 2.30 GHz) FC-BGA14C, Tray
DT.Z09AA.004
937260
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3205U
937260
Intel® Celeron® Processor 3205U (2M Cache, 1.50 GHz) FC-BGA14F, Tray
DQ.VPFAA.002
954033
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954033
Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
DG.E04AA.002
953004
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953004
Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
DG.E04AA.001
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DG.B83AA.003
953004
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953004
Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
DQ.BA9AA.002
959160
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
DQ.B86AA.004
952998
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400T
952998
Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray
DT.Z0KAA.001
939367
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3215U
939367
Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray
DT.Z0JAA.001
939360
1272
14nm
BROADWELL
N/A
I7-5500U
939360
Intel® Core™ i7-5500U Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray
DQ.Z0EAA.001
939367
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3215U
939367
Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray
DQ.Z0DAA.001
939367
1272
14nm
BROADWELL
INTEL(R) CELERON(R)
3215U
939367
Intel® Celeron® Processor 3215U (2M Cache, 1.70 GHz) FC-BGA14F, Tray
DQ.Z0FAA.001
939362
1272
14nm
BROADWELL
N/A
I5-5200U
939362
Intel® Core™ i5-5200U Processor (3M Cache, up to 2.70 GHz) FC-BGA14F, Tray
DQ.Z0GAA.001
939360
1272
14nm
BROADWELL
N/A
I7-5500U
939360
Intel® Core™ i7-5500U Processor (4M Cache, up to 3.00 GHz) FC-BGA14F, Tray
DT.VQ0AA.005
954047
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100T
954047
Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray
DT.VQ0AA.006
952998
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400T
952998
Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray
DT.VQ0AA.017
945383
1272
14nm
SKYLAKE
INTEL(R) CELERON(R)
G3900T
945383
Intel® Celeron® Processor G3900T (2M Cache, 2.60 GHz) FC-LGA14C, Tray
DQ.VPKAA.003
953001
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7500
953001
Intel® Core™ i5-7500 Processor (6M Cache, up to 3.80 GHz) FC-LGA14C, Tray
DQ.VPJAA.003
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DQ.BACAA.001
958406
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7130U
958406
Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray
CDX-0004C.00010
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
DT.B89AA.024
954033
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954033
Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
DT.B89AA.029
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.B89AA.033
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.B89AA.034
954033
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954033
Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
DG.E06AA.001
953004
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953004
Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
DG.B83AA.018
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DG.E04AA.020
953004
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953004
Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
DQ.VPGAA.001
954033
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954033
Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
DQ.B8UAA.002
954047
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100T
954047
Intel® Core™ i3-7100T Processor (3M Cache, 3.40 GHz) FC-LGA14C, Tray
DQ.B8UAA.003
952998
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400T
952998
Intel® Core™ i5-7400T Processor (6M Cache, up to 3.00 GHz) FC-LGA14C, Tray
DG.B83AA.013
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.B89AA.030
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.B89AA.010
954033
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954033
Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
DQ.B8RAA.004
953352
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7500U
953352
Intel® Core™ i7-7500U Processor (4M Cache, up to 3.50 GHz) FC-BGA14F, Tray
DT.B89AA.004
953004
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953004
Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
DT.B89AA.005
953004
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-7700
953004
Intel® Core™ i7-7700 Processor (8M Cache, up to 4.20 GHz) FC-LGA14C, Tray
DT.B89AA.028
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.B89AA.008
952986
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-7400
952986
Intel® Core™ i5-7400 Processor (6M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.BAPAA.002
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.BAQAA.001
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.Z0NAA.001
953360
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3865U
953360
Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray
DT.Z0RAA.001
958406
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7130U
958406
Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray
DT.Z0SAA.001
959160
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
DT.Z0TAA.001
959163
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
I7-8550U
959163
Intel® Core™ i7-8550U Processor (8M Cache, up to 4.00 GHz) FC-BGA14F, Tray
DG.E0HAA.004
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E0HAA.005
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E0HAA.006
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E0HAA.007
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DT.BAPAA.003
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.BAPAA.004
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.BAPAA.006
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DT.BAPAA.007
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DG.E0QAA.001
960620
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600K
960620
Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, Tray
DG.E0QAA.002
960620
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8600K
960620
Intel® Core™ i5-8600K Processor (9M Cache, up to 4.30 GHz) FC-LGA14C, Tray
DG.E0QAA.003
960617
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700K
960617
Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray
DG.E0QAA.004
960617
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700K
960617
Intel® Core™ i7-8700K Processor (12M Cache, up to 4.70 GHz) FC-LGA14C, Tray
DT.BARAA.001
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.BARAA.002
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.BARAA.003
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E0HAA.008
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E0HAA.009
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.VRAAA.001
963592
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500T
963592
Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.BAPAA.001
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.BAPAA.012
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.BAPAA.013
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.BARAA.004
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.Z0NAA.002
953360
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
3865U
953360
Intel® Celeron® Processor 3865U (2M Cache, 1.80 GHz) FC-BGA14F, Tray
DT.Z0RAA.002
958406
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7130U
958406
Intel® Core™ i3-7130U Processor (3M Cache, 2.70 GHz) FC-BGA14F, Tray
DT.VPUAA.001
952994
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
G4560
952994
Intel® Pentium® Processor G4560 (3M Cache, 3.50 GHz) FC-LGA14C, Tray
DQ.BBUAA.001
959160
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
DG.E0HAA.014
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DT.BAPAA.021
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DQ.BBUAA.004
959160
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
DT.BARAA.005
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.BAPAA.023
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.VPUAA.002
954033
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
I3-7100
954033
Intel® Core™ i3-7100 Processor (3M Cache, 3.90 GHz) FC-LGA14C, Tray
DG.E11AA.001
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DT.BAPAA.011
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DG.E0HAA.021
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E0HAA.022
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E0HAA.023
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DQ.BA9AA.003
959160
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
I5-8250U
959160
Intel® Core™ i5-8250U Processor (6M Cache, up to 3.40 GHz) FC-BGA14F, Tray
DQ.BCEAA.001
963540
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400T
963540
Intel® Core™ i5-8400T Processor (9M Cache, up to 3.30 GHz) FC-LGA14C, Tray
DQ.BCEAA.002
963506
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700T
963506
Intel® Core™ i7-8700T Processor (12M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.VRDAA.001
963660
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100T
963660
Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray
DT.VRDAA.002
963660
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100T
963660
Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray
DT.VRDAA.003
963592
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500T
963592
Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.VRDAA.004
963592
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500T
963592
Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray
CDX-0004C.00011
ITEM NUMBER
CPU
PRODUCT TYPE
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
PROCESSOR
PROCESSOR#
MMID
EXTERNAL PRODUCT MARKETING NAME
ACER
DT.VRDAA.005
963592
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500T
963592
Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.VRDAA.006
963506
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700T
963506
Intel® Core™ i7-8700T Processor (12M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E11AA.012
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E11AA.004
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DT.BARAA.006
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.BARAA.007
960619
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8400
960619
Intel® Core™ i5-8400 Processor (9M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DG.E11AA.014
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DQ.VS0AA.001
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DQ.VS0AA.002
963598
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
DQ.VS0AA.003
963598
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
DQ.VRZAA.001
963598
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
DQ.VRZAA.002
963598
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
DQ.VRZAA.003
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DQ.VRZAA.004
960618
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700
960618
Intel® Core™ i7-8700 Processor (12M Cache, up to 4.60 GHz) FC-LGA14C, Tray
DT.VQVAA.001
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.VQVAA.002
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.VR0AA.002
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.VR0AA.003
960012
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100
960012
Intel® Core™ i3-8100 Processor (6M Cache, 3.60 GHz) FC-LGA14C, Tray
DT.VQVAA.005
963598
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
DT.VQVAA.006
963598
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
DT.VR0AA.006
963598
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
DT.VR0AA.007
963598
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500
963598
Intel® Core™ i5-8500 Processor (9M Cache, up to 4.10 GHz) FC-LGA14C, Tray
DT.VRDAA.018
963506
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
I7-8700T
963506
Intel® Core™ i7-8700T Processor (12M Cache, up to 4.00 GHz) FC-LGA14C, Tray
DT.VRDAA.017
963592
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500T
963592
Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.VRDAA.013
963660
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100T
963660
Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray
DT.VRDAA.014
963660
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
I3-8100T
963660
Intel® Core™ i3-8100T Processor (6M Cache, 3.10 GHz) FC-LGA14C, Tray
DT.VRDAA.016
963592
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500T
963592
Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray
DT.VRDAA.015
963592
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
I5-8500T
963592
Intel® Core™ i5-8500T Processor (9M Cache, up to 3.50 GHz) FC-LGA14C, Tray
CDX-0004C.00012
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
PE200S
Motherboard
PE200S
E3930
14 nm
APOLLO LAKE
INTEL(R) ATOM(TM)
PE200S
Motherboard
PE200S
E3940
14 nm
APOLLO LAKE
INTEL(R) ATOM(TM)
PE200S
Motherboard
PE200S
E3950
14 nm
APOLLO LAKE
INTEL(R) ATOM(TM)
PRIME J3355I-C
Motherboard
PRIME J3355I-C
J3355
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
E201NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
E203NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
E402NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
E Series
Laptop
E403NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
TP202NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
TP203NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
TP203NAH
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
X540NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
X Series
Laptop
X541NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
Chromebook
Laptop
C213NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
Chromebook
Laptop
C223NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
Chromebook
Laptop
C423NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
Chromebook
Laptop
C523NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
Chromebook
Laptop
C403NA
N3350
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
Laptop
C223NA
N3350/N4200
14 nm
APOLLO LAKE
INTEL(R) CELERON®, PENTIUM ®
VivoBook
Laptop
TP401NA
N3450
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
X Series
Laptop
X541NA
N3450
14 nm
APOLLO LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
E402NA
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
E Series
Laptop
E403NA
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM®
VivoBook
Laptop
TP203NAH
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM®
VivoBook
Laptop
TP401NA
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM®
X Series
Laptop
X541NA
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM®
VivoBook
Laptop
X751NA
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM®
Chromebook
Laptop
C423NA
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM®
Chromebook
Laptop
C523NA
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM®
ASUSPRO
Laptop
P2540NV
N4200
14 nm
APOLLO LAKE
INTEL(R) PENTIUM®
ASUSPRO
Desktop
E410
Celeron N3150
14 nm
BRASWELL
INTEL(R) CELERON(R)
ASUSPRO
AIO
A4110
J3160
14 nm
BRASWELL
INTEL(R) CELERON(R)
E Series
Laptop
E402SA
N3050
14 nm
BRASWELL
INTEL(R) CELERON(R)
X Series
Laptop
X540SA
N3050
14 nm
BRASWELL
INTEL(R) CELERON(R)
X Series
Laptop
X553SA
N3050
14 nm
BRASWELL
INTEL(R) CELERON(R)
ASUSPRO
Laptop
P552SA
N3050
14 nm
BRASWELL
INTEL(R) CELERON(R)
N3050I-C
Motherboard
N3050I-C
N3050
14 nm
BRASWELL
INTEL(R) CELERON(R)
N3050T R2.0
Motherboard
N3050T R2.0
N3050
14 nm
BRASWELL
INTEL(R) CELERON(R)
ASUS
1
CDX-0005C.0001
CDX-0005C
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
N3050T
Motherboard
N3050T
N3050
14 nm
BRASWELL
INTEL(R) CELERON(R)
N3150I-C
Motherboard
N3150I-C
N3050
14 nm
BRASWELL
INTEL(R) CELERON(R)
Chromebook
Laptop
C300SA
N3060
14 nm
BRASWELL
INTEL(R) CELERON(R)
E Series
Laptop
E402SA
N3060
14 nm
BRASWELL
INTEL(R) CELERON(R)
Laptop
E406SA
N3060
14 nm
BRASWELL
INTEL(R) CELERON(R)
Chromebook
Laptop
C202SA
N3060
14 nm
BRASWELL
INTEL(R) CELERON(R)
PRIME N3060T
Motherboard
PRIME N3060T
N3060
14 nm
BRASWELL
INTEL(R) CELERON(R)
N3060I-CM-A
Motherboard
N3060I-CM-A
N3060
14 nm
BRASWELL
INTEL(R) CELERON(R)
E Series
Laptop
E402SA
N3150
14 nm
BRASWELL
INTEL(R) CELERON(R)
ASUSPRO
AIO
A4110
N3150
14 nm
BRASWELL
INTEL(R) CELERON(R)
Chromebook
Laptop
C300SA
N3160
14 nm
BRASWELL
INTEL(R) CELERON(R)
VivoBook
Laptop
X541SA
N3160
14 nm
BRASWELL
INTEL(R) CELERON(R)
N3160TH
Motherboard
N3160TH
N3160
14 nm
BRASWELL
INTEL(R) CELERON(R)
X Series
Laptop
X540SA
N3700
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
X Series
Laptop
X553SA
N3700
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
X Series
Laptop
X751SA
N3700
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
N3700T
Motherboard
N3700T
N3700
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
E Series
Laptop
E402SA
N3710
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
Laptop
E406SA
N3710
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
X Series
Laptop
X540SA
N3710
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
VivoBook
Laptop
X541SA
N3710
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
X Series
Laptop
X751SA
N3710
14 nm
BRASWELL
INTEL(R) PENTIUM(R)
Chromebox
Chrome Device
CN62
Celeron 3205U
14 nm
BROADWELL
INTEL(R) CELERON(R)
Chromebox
Chrome Device
CN62
Celeron 3215U
14 nm
BROADWELL
INTEL(R) CELERON(R)
Transformer Book
Laptop
TP300LA
i3-5005U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
X Series
Laptop
X540LA
i3-5005U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
VivoBook
Laptop
X555LA
i3-5005U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
X Series
Laptop
X751LA
i3-5005U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
ASUSPRO
Laptop
P552LA
i3-5005U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
X Series
Laptop
X455LA
i3-5005U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
Transformer Book
Laptop
TP300LA
i3-5010U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
Transformer Book
Laptop
TP500LA
i3-5010U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
VivoBook
Laptop
X555LA
i3-5010U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
X Series
Laptop
X751LA
i3-5010U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
X Series
Laptop
X455LA
i3-5010U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
Chromebox
Chrome Device
CN62
i3-5010U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
Transformer Book
Laptop
TP300LA
i3-5020U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
X Series
Laptop
X540LA
i3-5020U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
2
CDX-0005C.0002
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
VivoBook
Laptop
X555LA
i3-5020U
14 nm
BROADWELL
INTEL (R) CORE (TM) I3
Transformer Book
Laptop
TP300LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
Transformer Book
Laptop
TP300LD
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
Transformer Book
Laptop
TP500LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
Transformer Book
Laptop
TP550LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
ZenBook
Laptop
UX303LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
X Series
Laptop
X540LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
VivoBook
Laptop
X555LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
X Series
Laptop
X751LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
ASUSPRO
Laptop
P552LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
ET2323I
AIO
ET2323I
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
PT2001
AIO
PT2001
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
K/A Series
Laptop
K401LB
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
K Series
Laptop
K501LX
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
Laptop
N542LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
ZenBook
Laptop
UX305LA
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
X Series
Laptop
X555LB
i5-5200U
14 nm
BROADWELL
INTEL (R) CORE (TM) I5
Laptop
N591LN
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Transformer Book
Laptop
TP300LD
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Transformer Book
Laptop
TP500LA
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Transformer Book
Laptop
TP500LB
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Transformer Book
Laptop
TP550LA
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX301LA
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX303LA
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX303LN
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X555LA
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
X Series
Laptop
X751LA
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
ASUSPRO
Laptop
P552LA
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
K/A Series
Laptop
K401LB
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
K Series
Laptop
K501LB
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
K Series
Laptop
K501LX
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Laptop
N591LB
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Transformer Book
Laptop
TP300LJ
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Transformer Book
Laptop
TP550LJ
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX303LB
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
X Series
Laptop
X302LJ
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
X Series
Laptop
X455LJ
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
X Series
Laptop
X455LN
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
3
CDX-0005C.0003
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
X Series
Laptop
X540LJ
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
X Series
Laptop
X555LB
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
X Series
Laptop
X555LJ
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
X Series
Laptop
X751LB
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
X Series
Laptop
X751LX
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Chromebox
Chrome Device
CN62
i7-5500U
14 nm
BROADWELL
INTEL (R) CORE (TM) I7
Transformer Book
Laptop
T300CHI
M-5Y10
14 nm
BROADWELL
Intel® Core™ M-5Y10a
Transformer Book
Laptop
T300FA
M-5Y10
14 nm
BROADWELL
Intel® Core™ M-5Y10a
ZenBook
Laptop
UX305FA
M-5Y10
14 nm
BROADWELL
Intel® Core™ M-5Y10a
Transformer Book
Laptop
T300CHI
M-5Y71
14 nm
BROADWELL
Intel® Core™ M-5Y71
ZenBook
Laptop
UX305FA
M-5Y71
14 nm
BROADWELL
Intel® Core™ M-5Y71
VivoStick
Stick PC
TS10
Z8300
14 nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Transformer Book
Laptop
T101HA
Z8350
14 nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Transformer Book
Laptop
T102HA
Z8350
14 nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Transformer Book
Laptop
T103HAF
Z8350
14 nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
VivoStick
Stick PC
TS10
Z8350
14 nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
Transformer Book
Laptop
T100HA
Z8500
14 nm
CHERRY TRAIL
INTEL(R) ATOM(TM)
VivoMini
Mini PC
VC66-C
Celeron G4900
14 nm
COFFEE LAKE
INTEL(R) CELERON(R)
VivoMini
Mini PC
VC66-C
i3-8100
14 nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
PB Series
Mini PC
PB60
i3-8100T
14 nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
PB Series
Mini PC
PB60G
i3-8100T
14 nm
COFFEE LAKE
INTEL (R) CORE (TM) I3
TUF
Laptop
FX504GD
i5-8300H
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
TUF
Laptop
FX504GE
i5-8300H
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
TUF
Laptop
FX504GM
i5-8300H
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
TUF
Laptop
FX705GM
i5-8300H
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
ROG
Laptop
GL503GE
i5-8300H
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
TUF
Desktop
FX10CP
I5-8400
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
ROG
Desktop
GL12CP
I5-8400
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
TUF
Desktop
FX10CS
I5-8400
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
VivoMini
Mini PC
VC66-C
i5-8400
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
PB Series
Mini PC
PB60
i5-8400T
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
PB Series
Mini PC
PB60G
i5-8400T
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
VivoMini
Mini PC
VC66-C
i5-8500
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
ROG
Desktop
G21CN
I7-8700
14 nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
ROG
Desktop
GL12CM
I7-8700
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Desktop
GL12CP
I7-8700
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
TUF
Desktop
FX10CS
I7-8700
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
VivoMini
Mini PC
VC66-C
i7-8700
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
4
CDX-0005C.0004
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
ROG
Desktop
GL12CM
I7-8700K
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
Zen AiO
AIO
Z272SD
I7-8700T
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
PB Series
Mini PC
PB60
i7-8700T
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
PB Series
Mini PC
PB60G
i7-8700T
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ZenBook
Laptop
UX550GDX
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ZenBook
Laptop
UX550GE
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
VivoBook
Laptop
X580GD
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
TUF
Laptop
FX504GD
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
TUF
Laptop
FX504GE
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
TUF
Laptop
FX504GM
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
TUF
Laptop
FX505GD
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
TUF
Laptop
FX705GE
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
TUF
Laptop
FX705GM
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
G703GI
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
G703GS
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GL503GE
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GL504GM
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GL504GS
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GL703GE
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GL703GM
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GL703GS
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GL704GM
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GM501GS
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GX501GI
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GX531GM
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
ROG
Laptop
GX531GS
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
Zen AiO
AIO
ZN242GD
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
TUF
Laptop
FX505GE
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I8
TUF
Laptop
FX705GD
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I9
ROG
Laptop
G703GX
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I10
ROG
Laptop
GL504GV
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I11
ROG
Laptop
GL504GW
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I12
ROG
Laptop
GL704GV
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I13
ROG
Laptop
GL704GW
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I14
ROG
Laptop
GM501GM-GM501GM
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I15
ROG
Laptop
GM501GM-GU501GM
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I16
ROG
Laptop
GX531GW
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I17
ROG
Laptop
GX531GX
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I18
5
CDX-0005C.0005
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
ROG
Laptop
GX701GX
i7-8750H
14 nm
COFFEE LAKE
INTEL(R) CORE (TM) I19
ROG
Desktop
GL12CX
I7-9700K
14 nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
ProArt Series
Mini PC
PA90
i7-9700K
14 nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX550GEX
i9-8950HK
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
ROG
Laptop
G703GI
i9-8950HK
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
ROG
Laptop
G703GX
i9-8950HK
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
ROG
Desktop
GL12CX
I9-9900K
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
ProArt Series
Mini PC
PA90
i9-9900K
14 nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
VivoMini
Mini PC
VC66-C
Pentium G5400
14 nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
PB Series
Mini PC
PB60
Pentium G5400T
14 nm
COFFEE LAKE
INTEL(R) PENTIUM(R) GOLD
PN Series
Mini PC
PN40
Celeron J4005
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
PN Series
Mini PC
PN40
Celeron J5005
14 nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
PN Series
Mini PC
PN40
Celeron N4000
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
PN Series
Mini PC
PN40
Celeron N4100
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
PN Series
Mini PC
PN40
Celeron N5000
14 nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
PRIME J4005I-C
Motherboard
PRIME J4005I-C
J4005
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
E203MA
N4000
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
Laptop
E406MA
N4000
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
TP401MA
N4000
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
X Series
Laptop
X540MA
N4000
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
V161
AIO
V161GA
N4000
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
PRIME N4000T
Motherboard
PRIME N4000T
N4000
14 nm
GEMINI LAKE
INTEL(R) CELERON(R)
Laptop
C204MA
N4000/N4100/N5000
14 nm
GEMINI LAKE
INTEL(R) CELERON®, PENTIUM ® SILVER
Laptop
C214MA
N4000/N4100/N5000
14 nm
GEMINI LAKE
INTEL(R) CELERON®, PENTIUM ® SILVER
Laptop
C424MA
N4000/N4100/N5000
14 nm
GEMINI LAKE
INTEL(R) CELERON®, PENTIUM ® SILVER
Laptop
P2540MB
N4000/N4100/N5000
14 nm
GEMINI LAKE
INTEL(R) CELERON®, PENTIUM ® SILVER
Laptop
E406MA
N5000
14 nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
VivoBook
Laptop
TP401MA
N5000
14 nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
X Series
Laptop
X540MA
N5000
14 nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
VivoBook
Laptop
X705MA
N5000
14 nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
Motherboard
MINING I
3865U
14 nm
KABY LAKE
INTEL(R) CELERON(R)
Chromebox
Chrome Device
CN65
Celeron 3865U
14 nm
KABY LAKE
INTEL(R) CELERON(R)
ASUSPRO
Desktop
E420
Celeron 3865U
14 nm
KABY LAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
X540UA
i3-7020U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
VivoMini
Mini PC
VC66
i3-7100
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
ASUSPRO
Desktop
E520
i3-7100T
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
VivoBook
Laptop
TP510UA
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
ZenBook
Laptop
UX430UA
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
6
CDX-0005C.0006
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
VivoBook
Laptop
X510UA
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
VivoBook
Laptop
X541UA
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
X Series
Laptop
X556UA
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
X Series
Laptop
X756UA
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
ASUSPRO
Laptop
P2540UA
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
Chromebox
Chrome Device
CN65
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
VivoMini
Mini PC
UN65U
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
VivoMini
Mini PC
VM65N
i3-7100U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
VivoBook
Laptop
TP412UA
i3-8130U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
ZenBook
Laptop
UX331UA
i3-8130U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
VivoBook
Laptop
X540UA
i3-8130U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
VivoBook
Laptop
X705UA
i3-8130U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
PN Series
Mini PC
PN60-B
i3-8130U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I3
Transformer Book
Laptop
TP301UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
TP410UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
TP501UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
TP501UQ
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX310UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX330UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX360UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX390UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX430UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX430UQ
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX560UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X441UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X510UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X540UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X541UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
X Series
Laptop
X556UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
X Series
Laptop
X556UQ
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
X Series
Laptop
X556UR
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
X Series
Laptop
X756UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ASUSPRO
Laptop
B9440UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ASUSPRO
Laptop
P2440UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ASUSPRO
Laptop
P2540UA
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Vivo AiO
AIO
V221IC
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Vivo AiO
AIO
V241IC
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Zen AiO
AIO
ZN241IC
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
7
CDX-0005C.0007
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
VivoMini
Mini PC
UN65U
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoMini
Mini PC
VM65N
i5-7200U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ROG
Laptop
GL553VD
i5-7300HQ
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ROG
Laptop
GL702VI
i5-7300HQ
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ROG
Laptop
GL753VD
i5-7300HQ
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X580VD
i5-7300HQ
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
TUF
Laptop
FX503VD
i5-7300HQ
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
TUF
Laptop
FX503VM
i5-7300HQ
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ROG
Laptop
GL503VS
i5-7300HQ
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoPC
Desktop
M80CJ
i5-7300HQ
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Desktop
G11CD
I5-7400
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoPC
Desktop
K31CD
I5-7400
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoPC
Desktop
M32CD
I5-7400
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Desktop
D520SF
I5-7400
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ROG
Mini PC
GR8II
i5-7400
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ROG
Mini PC
GR8II6G
i5-7400
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoMini
Mini PC
VC66
i5-7400
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Zen AiO
AIO
ZN270IE
I5-7400T
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ASUSPRO
Desktop
E520
i5-7400T
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoMini
Mini PC
VC66
i5-7500
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoMini
Mini PC
VC68V
i5-7500
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX360CA
i5-7Y54
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
TP410UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
TP412UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
TP510UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
TP510UF
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX330UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX331UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX331UN
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX430UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX430UN
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX460UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX461UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX461UN
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX561UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X411UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X510UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X510UN
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
8
CDX-0005C.0008
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
VivoBook
Laptop
X530UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X540UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X570UD
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
ASUSPRO
Laptop
P2540UB
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Vivo AiO
AIO
V241IC
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Vivo AiO
AIO
V272UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X420UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
X Series
Laptop
X540UB
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
X705UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Vivo AiO
AIO
V222UA
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Chromebox
Chrome Device
CN65
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
PN Series
Mini PC
PN60-B
i5-8250U
14 nm
KABY LAKE
INTEL(R) CORE(TM) I5
Transformer Book
Laptop
T304UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
TP410UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
TP501UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
TP501UQ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX330UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX360UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX370UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX390UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX410UQ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX430UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX430UQ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX490UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX510UX
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX560UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX560UQ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX560UX
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X510UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X510UQ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X541UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
X Series
Laptop
X541UJ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X541UV
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X542UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
X Series
Laptop
X556UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
X Series
Laptop
X556UQ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X705UQ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ASUSPRO
Laptop
B9440UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
9
CDX-0005C.0009
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
ASUSPRO
Laptop
P2440UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ASUSPRO
Laptop
P2440UQ
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ASUSPRO
Laptop
P2540UA
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoMini
Mini PC
UN65U
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoMini
Mini PC
VM65N
i7-7500U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
Desktop
G11CD
I7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Desktop
G20CI
I7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Desktop
GD30CI
I7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoPC
Desktop
K31CD
I7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoPC
Desktop
M32CD
I7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Mini PC
GR8II
i7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Mini PC
GR8II6G
i7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoMini
Mini PC
VC66
i7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoMini
Mini PC
VC68V
i7-7700
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
FX/ZX Series
Laptop
FX502VD
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VS
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL502VM
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL502VS
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL503VD
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL503VM
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL553VD
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL553VE
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL702VI
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL702VM
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL702VS
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL703VD
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL703VM
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL753VD
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL753VE
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GX501VIK
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GX501VSK
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX550VE
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
X Series
Laptop
X550VX
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X580VD
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
TUF
Laptop
FX503VD
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
TUF
Laptop
FX503VM
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL503VS
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
Zen AiO
AIO
ZN242IF
i7-7700HQ
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
10
CDX-0005C.00010
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
ROG
Desktop
GT51CH
I7-7700K
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
Zen AiO
AIO
Z240IE
I7-7700T
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ASUSPRO
Desktop
E520
i7-7700T
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G701VI
i7-7820HK
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VS
i7-7820HK
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GX800VH
i7-7820HK
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G703VI
i7-7820HK
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
TP401CA
i7-7Y75
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
TP410UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
TP412UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
TP510UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
TP510UQ
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX331UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX370UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX391UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX410UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX430UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX430UN
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX461UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX461UN
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX490UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX561UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X542UN
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
UX561UD
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X411UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X411UN
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X411UQ
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X510UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X510UF
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X510UN
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X510UQ
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X530UN
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X540UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X542UA
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X570UD
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X705UD
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
X705UN
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
ASUSPRO
Laptop
P2540UB
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
11
CDX-0005C.00011
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
ASUSPRO
Laptop
P5440UF
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
PN Series
Mini PC
PN60-B
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
Chromebox
Chrome Device
CN65
i7-8550U
14 nm
KABY LAKE
INTEL (R) CORE (TM) I7
Laptop
X406UA
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X407UA/UB/UF
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X409UA/UB/UJ
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X411UA/UF/UN
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X412UA/UB/UF
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X420UA
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
TP412UA
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X507UA/UB/UF
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X509UA/UB/UJ
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X510UA/UF
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X512UA/UB/UF
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X540UA/UB
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
Laptop
X705UA/UB
i7-8550U/i5-8250U/i3-8130U/4417U
14 nm
KABY LAKE
EL (R) CORE (TM) I3, I5, I7, INTEL(R) PENTIUM
VivoBook
Laptop
TP401CA
m3-7Y30
14 nm
KABY LAKE
INTEL (R) CORE (TM) M
ZenBook
Laptop
UX330CA
m3-7Y30
14 nm
KABY LAKE
INTEL (R) CORE (TM) M
ZenBook
Laptop
UX360CA
m3-7Y30
14 nm
KABY LAKE
INTEL (R) CORE (TM) M
Laptop
MJ401TA
M3-8100Y
14 nm
KABY LAKE
INTEL (R) CORE (TM) M
Laptop
C434TA
M3-8100Y/4415Y/i5-8200Y/i7-8500Y
14 nm
KABY LAKE
TEL(R) PENTIUM®, INTEL ® CORE ™ M, I5,
Chromebook
Laptop
C302CA
4405Y
14 nm
SKYLAKE
INTEL(R) PENTIUM(R)
Motherboard
H110I-CM-AA
G3900TE
14 nm
SKYLAKE
INTEL(R) CELERON(R)
VivoBook
Laptop
X540UA
i3-6006U
14 nm
SKYLAKE
INTEL (R) CORE (TM) I3
VivoBook
Laptop
X541UA
i3-6006U
14 nm
SKYLAKE
INTEL (R) CORE (TM) I3
ASUSPRO
Laptop
P553UA
i3-6006U
14 nm
SKYLAKE
INTEL (R) CORE (TM) I3
VivoPC
Desktop
K31CD
I3-6098P
14 nm
SKYLAKE
INTEL (R) CORE (TM) I3
VivoPC
Desktop
M32CD
I3-6100
14 nm
SKYLAKE
INTEL (R) CORE (TM) I3
Motherboard
H110I-CM-AA
i3-6100
14 nm
SKYLAKE
INTEL (R) CORE (TM) I3
VivoMini
Mini PC
VC66
i3-6100
14 nm
SKYLAKE
INTEL (R) CORE (TM) I3
VivoMini
Mini PC
VC65R
i3-6100T
14 nm
SKYLAKE
INTEL (R) CORE (TM) I3
VivoBook
Laptop
TP501UA
i3-6100U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
X541UA
i3-6100U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X556UA
i3-6100U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X756UA
i3-6100U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoMini
Mini PC
VM65N
i3-6100U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
X541UA
i5-6198DU
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
X Series
Laptop
X555UA
i5-6198DU
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
12
CDX-0005C.00012
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
X Series
Laptop
X556UQ
i5-6198DU
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
X Series
Laptop
X556UR
i5-6198DU
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
K Series
Laptop
K501UX
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Laptop
N543UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Transformer Book
Laptop
T303UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Transformer Book
Laptop
TP300UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Transformer Book
Laptop
TP301UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
TP501UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX303UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX305UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX310UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX360UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX560UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
X541UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X555UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X555UB
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X556UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X556UB
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X556UQ
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X756UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Laptop
X756UX
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ASUSPRO
Laptop
P453UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ASUSPRO
Laptop
P553UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Zen AiO
AIO
ZN240IC
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X456UA
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X555UF
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X556UF
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoMini
Mini PC
VM65N
i5-6200U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ROG
Laptop
GL502VM
i5-6300HQ
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
ROG
Laptop
GL552VW
i5-6300HQ
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
ROG
Laptop
GL553VW
i5-6300HQ
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
N551VW
i5-6300HQ
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
VivoBook
Laptop
N552VX
i5-6300HQ
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
X Series
Laptop
X550VQ
i5-6300HQ
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
Desktop
G11CD
I5-6400
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
ROG
Desktop
G20CB
I5-6400
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
VivoPC
Desktop
K31CD
I5-6400
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
VivoPC
Desktop
M32CD
I5-6400
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
13
CDX-0005C.00013
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
ROG
Mini PC
GR8II
i5-6400
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
Vivo AiO
AIO
V230IC
I5-6400T
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
Zen AiO
AIO
Z240IC
I5-6400T
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
VivoMini
Mini PC
VC65R
i5-6400T
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
Motherboard
H110I-CM-AA
i5-6500TE
14 nm
SKYLAKE
INTEL(R) CORE(TM) I5
K Series
Laptop
K501UW
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
K Series
Laptop
K501UX
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Transformer Book
Laptop
T303UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Transformer Book
Laptop
TP301UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
TP501UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
TP501UB
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
TP501UQ
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX303UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX303UB
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX305UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX310UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX390UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX510UW
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX510UX
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX560UQ
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX560UX
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
X541UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
X541UV
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X555UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X555UB
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X556UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X556UQ
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X556UR
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Laptop
X756UX
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ASUSPRO
Laptop
P453UA
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
K Series
Laptop
K501UB
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Laptop
N592UB
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Laptop
N593UB
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X456UJ
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoBook
Laptop
X456UV
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
X Series
Laptop
X756UB
i7-6500U
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Desktop
G11CB
I7-6700
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
Desktop
G11CD
I7-6700
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
14
CDX-0005C.00014
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
ROG
Desktop
G20CB
I7-6700
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
VivoPC
Desktop
M32CD
I7-6700
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Mini PC
GR8II
i7-6700
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VL
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VM
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VS
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VT
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VY
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL502VM
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL502VS
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL502VT
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL502VY
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL552VW
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL552VX
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL553VW
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL702VM
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GL752VW
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ZenBook
Laptop
N501VW
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
N551VW
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
N552VW
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
VivoBook
Laptop
N552VX
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
X Series
Laptop
X550VX
i7-6700HQ
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Desktop
GT51CA
I7-6700K
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
Zen AiO
AIO
Z240IC
I7-6700T
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
VivoMini
Mini PC
VC65R
i7-6700T
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G701VI
i7-6820HK
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G701VO
i7-6820HK
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VS
i7-6820HK
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
G752VY
i7-6820HK
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
ROG
Laptop
GX700VO
i7-6820HK
14 nm
SKYLAKE
INTEL (R) CORE (TM) I7
Chromebook
Laptop
C302CA
m3-6Y30
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX305CA
m3-6Y30
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX360CA
m3-6Y30
14 nm
SKYLAKE
INTEL (R) PROCESSOR
Chromebook
Laptop
C302CA
m5-6Y54
14 nm
SKYLAKE
INTEL (R) CORE (TM) M
Chromebook
Laptop
C302CA
m7-6Y75
14 nm
SKYLAKE
INTEL (R) PROCESSOR
ZenBook
Laptop
UX305CA
m7-6Y75
14 nm
SKYLAKE
INTEL (R) PROCESSOR
VivoMini
Mini PC
VC66
Pentium G4400
14 nm
SKYLAKE
INTEL(R) PENTIUM(R)
ASUSPRO
Desktop
E520
Pentium G4400T
14 nm
SKYLAKE
INTEL(R) PENTIUM(R)
15
CDX-0005C.00015
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
VivoMini
Mini PC
VC65R
Pentium G4400T
14 nm
SKYLAKE
INTEL(R) PENTIUM(R)
PE200U
Motherboard
PE200U
i3-8145U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I3
ZenBook
Laptop
UX331FN
i5-8265U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX333FA
i5-8265U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX433FA
i5-8265U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX431FA
i5-8265U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX533FN
i5-8265U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
X530FA
i5-8265U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
Vivo AiO
AIO
V241FA
i5-8265U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
PE200U
Motherboard
PE200U
i5-8265U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
ZenBook
Laptop
UX331FAL
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX362FA
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX433FA
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX433FN
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX461FA
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX461FN
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX533FD
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX562FD
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX391FA
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
ZenBook
Laptop
UX431FA
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
VivoBook
Laptop
X530FN
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
Laptop
X705FD
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
Laptop
X705FN
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
PE200U
Motherboard
PE200U
i7-8565U
14 nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
Laptop
X330FA/FN
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X330FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X403FA
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X409FA/FB/FJ/FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X412FA/FJ
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X412FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X420FA
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X430FA/FN
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X432FA/FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
TP412FA
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX431FA/FN
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X509FA/FB/FJ/FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X512FA/FB
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X530FN/FA
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
16
CDX-0005C.00016
ASUS PRODUCT
NAME
PRODUCT TYPE
ASUS MODEL NAME
CPU
PROCESS
NODE
ARCHITECTURE
BRAND
ASUS
Laptop
X531FA/FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X532FA/FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X705FD/FN
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
X712FA/FB
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX391FA
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX392FA/FN
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX362FA
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX562FA
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX562FDX
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX334FA/FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX434FA/FL
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
UX534FA/FT
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
AIO
V241FA/FF
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
B9440FAV
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
L524FA/FB
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
P3540FA/FB
i7-8565U/i5-8265U/i3-8145U/5405U
14 nm
WHISKEY LAKE
Multiple
Laptop
GL12CX
i9-9900K/i7-9700K/i5-9400/i5-9400F
14 nm
COFFEE LAKE
Multiple
Laptop
GL10CS
i9-9900K/i7-9700K/i5-9400/i5-9400F
14 nm
COFFEE LAKE
Multiple
Laptop
G21CN
i9-9900K/i7-9700K/i5-9400/i5-9400F
14 nm
COFFEE LAKE
Multiple
Laptop
G21CX
i9-9900K/i7-9700K/i5-9400/i5-9400F
14 nm
COFFEE LAKE
Multiple
17
CDX-0005C.00017
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
80V4000GUS
Notebook YG 710-14IKB I5 8G 256 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80V40023US
Notebook YG 710-14IKB I7 8G 256 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80V4008FUS
Notebook YG 710-14IKB I7 8G 256 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WKCTO1WW
ASSEMBLY Lenovo Y520-15IKBN
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK0165US
Notebook LN Y520-15IKBN I7 8G 2T 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00F9US
Notebook LN Y520-15IKBN I7 16 2T 256 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK001KUS
Notebook LN Y520-15IKBN I7 16 2T 256 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00FHUS
Notebook LN Y520-15IKBN I5 8G 256G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00HTUS
Notebook LN Y520-15IKBN I5 16 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00CCUS
Notebook LN Y520-15IKBN I7 16 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK01HEUS
Notebook LN Y520-15IKBN I7 16G 1T128G10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK001LUS
Notebook LN Y520-15IKBN I5 8G 1T 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80WK01F2US
Notebook LN Y520-15IKBN I5 8G 256G 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80WK001JUS
Notebook LN Y520-15IKBN I7 8G 1T 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80WK001MUS
Notebook LN Y520-15IKBN I7 16 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00G5US
Notebook LN Y520-15IKBN I7 16 1T 256 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00T2US
Notebook LN Y520-15IKBN I7 8G 1T 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00T3US
Notebook LN Y520-15IKBN I7 16 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00HSUS
Notebook LN Y520-15IKBN I7 8G 256G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WKX005US
80WK00F9US S&D MTM
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80WK00MRCF
Notebook LN Y520-15IKBN I5 8G 1T 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80WK00MTCF
Notebook LN Y520-15IKBN I7 16 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WKX003US
80WK00F9US REFURB MTM
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WK00FCUS
Notebook LN Y520-15IKBN I7 8G 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WY0000US
Notebook LN Y520-15IKBA I5 8G 1T 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80WY000NUS
Notebook LN Y520-15IKBA I7 8G 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WYCTO1WW
ASSEMBLY Lenovo Y520-15IKBA
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WY001TCF
Notebook LN Y520-15IKBA I7 8G 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80WY001SCF
Notebook LN Y520-15IKBA I5 8G 1T 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80X4000WUS
Notebook IP 320S-14IKB I5 8G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80X400EJUS
Notebook IP 320S-14IKB I3 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80X400EHUS
Notebook IP 320S-14IKB I5 8G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80X40094US
Notebook IP 320S-14IKB I3 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80X40072US
Notebook IP 320S-14IKB I5 8G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80X40093US
Notebook IP 320S-14IKB I5 8G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80X5005DUS
Notebook IP 320S-15IKB I5 8G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80X5005EUS
Notebook IP 320S-15IKB I7 8G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X50002US
Notebook IP 320S-15IKB I7 8G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X50003US
Notebook IP 320S-15IKB I5 8G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80X50001US
Notebook IP 320S-15IKB I7 8G 512G 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X50041US
Notebook IP 320S-15IKB I7 8G 256G 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7008JUS
Notebook YG 720-15IKB I7 8G 8G 1TB 10P
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7001WUS
Notebook YG 720-15IKB I7 8G 256G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7003VUS
Notebook YG 720-15IKB I7 8G 8G 1TB 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7008HUS
Notebook YG 720-15IKB I5 8G 256G 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80X7006KUS
Notebook YG 720-15IKB I7 8G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7006NUS
Notebook YG 720-15IKB I7 8G 8G 512G 10P
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7001TUS
Notebook YG 720-15IKB I7 8G 256G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7001SUS
Notebook YG 720-15IKB I7 8G 8G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X700CAUS
Notebook YG 720-15IKB I7 8G 8G 256G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7001UUS
Notebook YG 720-15IKB I7 8G 256G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X700C0US
Notebook YG 720-15IKB I7 8G 8G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7008YCF
Notebook YG 720-15IKB I7 8G 8G 1TB 10P
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7001VUS
Notebook YG 720-15IKB I7 8G 8G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80X7005PCF
Notebook YG 720-15IKB I7 8G 8G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
LENOVO
1
CDX-0006C.0001
CDX-0006C
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
LENOVO
80X7009XCF
Notebook YG 720-15IKB I7 8G 8G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA000YUS
Notebook IP FLEX 5-1470 I5 8G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA0015US
Notebook IP FLEX 5-1470 4415U 4G 1T 10H
Notebook
4415U
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
80XA0002US
Notebook IP FLEX 5-1470 I3 4G 500 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XA0011US
Notebook IP FLEX 5-1470 I7 16G1T128G10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA0009US
Notebook IP FLEX 5-1470 I7 16G 1T 128G 1
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA000EUS
Notebook IP FLEX 5-1470 I5 16G 1T 256G 1
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA000UUS
Notebook IP FLEX 5-1470 I7 8G 256G 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA000AUS
Notebook IP FLEX 5-1470 I7 8G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA0007US
Notebook IP FLEX 5-1470 I5 8G 128G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA000TUS
Notebook IP FLEX 5-1470 I5 8G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA0000US
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA000VUS
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA0006US
Notebook IP FLEX 5-1470 I7 8G 256G 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA000DUS
Notebook IP FLEX 5-1470 I7 16G 1T 512G 1
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA0001US
Notebook IP FLEX 5-1470 I5 8G 128G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA000PUS
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA000KUS
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA000CUS
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA000QCF
Notebook IP FLEX 5-1470 I7 16G1T128G 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA000LCF
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA000SCF
Notebook IP FLEX 5-1470 I7 8G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XA0010CF
Notebook IP FLEX 5-1470 I5 8G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XA0014US
Notebook IP FLEX 5-1470 4415U 4G 1T 10H
Notebook
4415U
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
80XL03RKUS
Notebook IP 320-15IKB I7 16G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XL035SUS
Notebook IP 320-15IKB I3 4G 500 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XL035WUS
Notebook IP 320-15IKB I7 4G 4G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XL035UUS
Notebook IP 320-15IKB I5 8G 4G 256G 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XL003HUS
Notebook IP 320-15IKB I3 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XL0006US
Notebook IP 320-15IKB I5 4G 4G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XL000FUS
Notebook IP 320-15IKB I7 16G 2T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XL03HYUS
Notebook IP 320-15IKB I7 4G 4G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XL03CCUS
Notebook IP 320-15IKB I3 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XL03CBUS
Notebook IP 320-15IKB I5 4G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XL03JBUS
Notebook IP 320-15IKB I7 16G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XL03J1US
Notebook IP 320-15IKB I7 16G 2T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XL03BQUS
Notebook IP 320-15IKB I7 8G 4G 256G 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XL0005US
Notebook IP 320-15IKB I3 2G 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XL02MRCF
Notebook IP 320-15IKB I5 4G 4G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XL039KCF
Notebook IP 320-15IKB I7 4G 4G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XL039JCF
Notebook IP 320-15IKB I3 4G 500 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XL03J0US
Notebook IP 320-15IKB I3 4G 500 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XL03MEUS
Notebook IP 320-15IKB I7 16G 2T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XM00E6US
Notebook IP 320-17IKB I5 4G 4G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XM00JJUS
Notebook IP 320-17IKB I3 4G 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XM00CAUS
Notebook IP 320-17IKB I7 4G 4G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XM00JLUS
Notebook IP 320-17IKB I7 4G 4G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XM0000US
Notebook IP 320-17IKB I5 4G 4G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XM0002US
Notebook IP 320-17IKB I7 16G 2T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XM0006US
Notebook IP 320-17IKB I7 16G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XM00F0US
Notebook IP 320-17IKB I3 4G 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XM00GRUS
Notebook IP 320-17IKB I5 4G 4G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XM0001US
Notebook IP 320-17IKB I3 2G 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XM0008US
Notebook IP 320-17IKB I5 4G 4G 1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XM00CECF
Notebook IP 320-17IKB I7 4G 4G 1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
2
CDX-0006C.0002
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
LENOVO
80XM0098CF
Notebook IP 320-17IKB I3 2G 4G 1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XN000AUS
Notebook IP 320-15IKB TOUCH I32G4G1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XN0002US
Notebook IP 320-15IKB TOUCH I7 16G2T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XN0009US
Notebook IP 320-15IKB TOUCH I58G4G1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XN000MUS
Notebook IP 320-15IKB TOUCH I7 4G 4G 1T
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XN0008US
Notebook IP 320-15IKB TOUCH I78G4G1T 10H
Notebook
i7-7500U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80XN0003US
Notebook IP 320-15IKB TOUCH I54G4G1T 10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XN0004US
Notebook IP 320-15IKB TOUCH I32G4G1T 10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XN000CCF
Notebook IP 320-15IKB TOUCH I5 4G4G1T10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XN000BCF
Notebook IP 320-15IKB TOUCH I3 2G4G1T10H
Notebook
i3-7100U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
80XN000DCF
Notebook IP 320-15IKB TOUCH I5 8G4G1T10H
Notebook
i5-7200U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80XR017EUS
Notebook IP 320-15IAP N3450 4G 500 10H
Notebook
N3450
1273
14nm
APOLLO LAKE
INTEL(R) CELERON®
80XR00A7US
Notebook IP 320-15IAP N4200 4G 1T 10H
Notebook
N4200
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
80XR017DUS
Notebook IP 320-15IAP N4200 4G 1T 10H
Notebook
N4200
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
80XR00AGUS
Notebook IP 320-15IAP N3350 4G 1T 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
80XR017FUS
Notebook IP 320-15IAP N4200 4G 1T 10H
Notebook
N4200
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
80XR00AKUS
Notebook IP 320-15IAP N3350 4G 1T 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
80XR00AJUS
Notebook IP 320-15IAP N3350 4G 1T 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
80XR00AMUS
Notebook IP 320-15IAP N4200 4G 1T 10H
Notebook
N4200
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
80XR00AHUS
Notebook IP 320-15IAP N3350 4G 1T 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
80XR00WHUS
Notebook IP 320-15IAP N3350 4G 1T 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
80XR00WGUS
Notebook IP 320-15IAP N4200 4G 1T 10H
Notebook
N4200
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
80XR00ALUS
Notebook IP 320-15IAP N4200 4G 1T 10H
Notebook
N4200
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
80XR00ANUS
Notebook IP 320-15IAP N4200 4G 1T 10H
Notebook
N4200
1273
14nm
APOLLO LAKE
INTEL(R) PENTIUM(R)
80Y7CTO1WW
ASSEMBLY Lenovo YOGA 920-13IKB
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y70063US
Notebook YG 920-13IKB I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
80Y70062US
Notebook YG 920-13IKB I7 16G 1TB 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y70064US
Notebook YG 920-13IKB I7 8G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y70066US
Notebook YG 920-13IKB I7 16G 1TB 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y70010US
Notebook YG 920-13IKB I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y7000WUS
Notebook YG 920-13IKB I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y70074US
Notebook YG 920-13IKB I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y7002SUS
Notebook YG 920-13IKB I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y70012US
Notebook YG 920-13IKB I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y700FNUS
Notebook YG 920-13IKB I7 16G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y7006JCF
Notebook YG 920-13IKB I7 8G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y8CTO1WW
ASSEMBLY Lenovo YOGA 920-13IKB Glass
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y8000UUS
Notebook YG 920 Glass I7 16G 1TB 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80Y8S00000
Yoga 920 SW Glass-BBY
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YYCTO1WW
ASSEMBLY Lenovo Y520-15IKBM
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YY0060US
Notebook LN Y520-15IKBM I7 16 2T 256 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YY003PUS
Notebook LN Y520-15IKBM I7 8G 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YY009PUS
Notebook LN Y520-15IKBM I7 16G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YY009NUS
Notebook LN Y520-15IKBM I7 8G 1T 128G10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YY0074US
Notebook LN Y520-15IKBM I7 16G 256G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YY0009US
Notebook LN Y520-15IKBM I7 16 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YY0090US
Notebook LN Y520-15IKBM I7 8G 1T 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YY003TCF
Notebook LN Y520-15IKBM I7 8G 1T 128 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YYX005US
80YY0074US REFURB MTM
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
80YYX006US
80YY0074US S&D MTM
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81A400BFUS
Notebook IP 120S-11IAP N3350 2G 64 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
81A400BGUS
Notebook IP 120S-11IAP N3350 2G 64 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
81A40025US
Notebook IP 120S-11IAP N3350 2G 32 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
81A5006SUS
Notebook IP 120S-14IAP N3350 4G 64 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
81A5001UUS
Notebook IP 120S-14IAP N3350 2G 32 10H
Notebook
N3350
1273
14nm
APOLLO LAKE
INTEL(R) CELERON(R)
3
CDX-0006C.0003
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
LENOVO
81A70001US
Notebook IP FLEX 6-11IGM N5000 4G128 10H
Notebook
N5000
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
81A70006US
Notebook IP FLEX 6-11IGM N5000 4G 64 10S
Notebook
N5000
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
81A70002US
Notebook IP FLEX 6-11IGM N4000 2G 64 10H
Notebook
N4000
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
81A70005US
NB IP FLEX 6-11IGM N4000 4G 64 10S
Notebook
N4000
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
81A7000AUS
Notebook IP FLEX 6-11IGM N5000 4G 64 10S
Notebook
N5000
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
81A7000BUS
NB IP FLEX 6-11IGM N5000 4G 64 10S
Notebook
N5000
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
81AC0006US
Notebook IP 720S-15IKB I7 8G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81AC0008US
Notebook IP 720S-15IKB I5 8G 256G 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81AC003EUS
Notebook IP 720S-15IKB I5 8G 256G 10P
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81AC002KUS
Notebook IP 720S-15IKB I7 8G 512G 10P
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81AC0003US
Notebook IP 720S-15IKB I5 8G 256G 10H
Notebook
i5-7300HQ
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BD001NUS
Notebook IP 720S-14IKB I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BD001QUS
Notebook IP 720S-14IKB I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BD001PUS
Notebook IP 720S-14IKB I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BD000TUS
Notebook IP 720S-14IKB I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BD000SUS
Notebook IP 720S-14IKB I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BF001JUS
Notebook IP 520-15IKB I5 4G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BF001KUS
Notebook IP 520-15IKB I7 16G 1T 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BF00A1US
Notebook IP 520-15IKB I5 8G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BG008AUS
Notebook IP 320-15IKB I5 4G 4G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BG001AUS
Notebook IP 320-15IKB I5 4G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BH0001US
Notebook IP 320-15IKB Touch I58G4G1T10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BH0000US
Notebook IP 320-15IKB Touch I7 8G4G1T10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BH0003US
Notebook IP 320-15IKB TouchI54G4G1T10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BHX001US
81BH0000US REFURB MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BHX003US
81BH0000US S&D MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BHX002US
81BH0001US REFURB MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BJ0006US
Notebook IP 320-17IKB I7 16G 1T 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BL009GUS
Notebook IP 520S-14IKB I5 8G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BL009EUS
Notebook IP 520S-14IKB I7 8G 1T 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BL009FUS
Notebook IP 520S-14IKB I7 8G 1T 128G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BL00CUUS
Notebook IP 520S-14IKB I5 8G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BN000AUS
Notebook IP 320S-14IKB I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BQ000EUS
Notebook IP 320S-15IKB I5 8G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BQ000DUS
Notebook IP 320S-15IKB I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BV002FUS
Notebook IP 720S-13IKB I7 8G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BV002GUS
Notebook IP 720S-13IKB I7 8G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BV002HUS
Notebook IP 720S-13IKB I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BV002EUS
Notebook IP 720S-13IKB I7 8G 1TB 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BV008KUS
Notebook IP 720S-13IKB I7 8G 1TB 10P
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81BV008FUS
Notebook IP 720S-13IKB I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81BV002CUS
Notebook IP 720S-13IKB I7 8G 1TB 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C3005RUS
Notebook YG 720-13IKB I7 8G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C3005QUS
Notebook YG 720-13IKB I7 16G 1TB 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C3005PUS
Notebook YG 720-13IKB I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C3005SUS
Notebook YG 720-13IKB I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81C3000LUS
Notebook YG 720-13IKB I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81C300C6US
Notebook YG 720-13IKB I7 16G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C9000EUS
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81C90004US
Notebook IP FLEX 5-1470 I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C90009US
Notebook IP FLEX 5-1470 I5 8G 128G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81C9000CUS
Notebook IP FLEX 5-1470 I5 8G 128G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81C9000FUS
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81C9000JUS
Notebook IP FLEX 5-1470 I7 8G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C9000HUS
Notebook IP FLEX 5-1470 I7 16G1T512G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
4
CDX-0006C.0004
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
LENOVO
81C9000GUS
Notebook IP FLEX 5-1470 I7 16G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C9000DUS
Notebook IP FLEX 5-1470 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81C9000KUS
Notebook IP FLEX 5-1470 I7 16G1T256G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81C9X002US
81C9000EUS S&D MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81C9X001US
81C9000EUS REFURB MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA000GUS
Notebook IP FLEX 5-1570 I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA000JUS
Notebook IP FLEX 5-1570 I5 8G 500 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA000HUS
Notebook IP FLEX 5-1570 I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA001QUS
Notebook IP FLEX 5-1570 I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA000KUS
Notebook IP FLEX 5-1570 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA000CUS
Notebook IP FLEX 5-1570 I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA000PUS
Notebook IP FLEX 5-1570 I58G1T256G10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA0008US
Notebook IP FLEX 5-1570 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA000UUS
Notebook IP FLEX 5-1570 I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA000BUS
Notebook IP FLEX 5-1570 I7 16G1T256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA001RUS
Notebook IP FLEX 5-1570 I3 8G 128G 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81CA001SUS
Notebook IP FLEX 5-1570 I7 8G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA0013US
Notebook IP FLEX 5-1570 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA000RUS
Notebook IP FLEX 5-1570 I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA0017US
Notebook IP FLEX 5-1570 I7 16G1T512G10P
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA000XUS
Notebook IP FLEX 5-1570 I7 16G1T256G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA001KUS
Notebook IP FLEX 5-1570 I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA001TUS
Notebook IP FLEX 5-1570 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA000DUS
Notebook IP FLEX 5-1570 I7 16G1T256G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA0009US
Notebook IP FLEX 5-1570 I5 8G 1T128G10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA000TUS
Notebook IP FLEX 5-1570 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA000AUS
Notebook IP FLEX 5-1570 I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA000VUS
Notebook IP FLEX 5-1570 I7 16G1T256G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA0007US
Notebook IP FLEX 5-1570 I5 8G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA0001US
Notebook IP FLEX 5-1570 I7 16G 1T256G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA000YUS
Notebook IP FLEX 5-1570 I7 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA0010US
Notebook IP FLEX 5-1570 I5 8G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA0000US
Notebook IP FLEX 5-1570 I5 8G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CAX018US
81CA000RUS REFURB MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA0018US
Notebook IP FLEX 5-1570 I7 16G 512G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CAX022US
81CA000RUS S&D MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA0016US
Notebook IP FLEX 5-1570 I7 16G1T256G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CAX006US
81CA000JUS REFURB MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CAX037US
81CA001KUS REFURB MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CAX039US
81CA001KUS S&D MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CAX032US
81CA000XUS REFURB MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CAX028US
81CA0017US REFURB MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CAX034US
81CA000XUS S&D MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CAX038US
81CA001TUS REFURB MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CAX040US
81CA001TUS S&D MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81CA0011US
Notebook IP FLEX 5-1570 I7 16G1T256G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CA000FUS
Notebook IP FLEX 5-1570 I7 8G 256G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CR0005US
Notebook IP 720S T-15IKB I7 16G 1TB 10P
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CR0006US
Notebook IP 720S T-15IKB I7 16G 512G 10P
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CR0002US
Notebook IP 720S T-15IKB I7 16G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CR0007US
Notebook IP 720S T-15IKB I7 16G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CR0003US
Notebook IP 720S T-15IKB I7 16G 1TB 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81CR0004US
Notebook IP 720S T-15IKB I7 16G 512G 10H
Notebook
i7-7700HQ
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DE01M2US
Notebook IP 330-15IKB I5 4G 4G 1T 16G10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DE01KRUS
Notebook IP 330-15IKB I3 4G 1T 16G 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
5
CDX-0006C.0005
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
LENOVO
81DE0085US
Notebook IP 330-15IKB I3 4G 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE017BUS
Notebook IP 330-15IKB I3 4G 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE0044US
Notebook IP 330-15IKB I3 2G 4G 1T 10H
Notebook
i3-7020U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE0045US
Notebook IP 330-15IKB I5 4G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DE01P3US
Notebook IP 330-15IKB I3 2G 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE0026US
Notebook IP 330-15IKB I3 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE0025US
Notebook IP 330-15IKB I7 16G 1T 16G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DE00L8US
Notebook IP 330-15IKB I3 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE00LAUS
Notebook IP 330-15IKB I3 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE00T1US
Notebook IP 330-15IKB I3 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE00LBUS
Notebook IP 330-15IKB I5 4G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DE00T0US
Notebook IP 330-15IKB I3 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE00L0US
Notebook IP 330-15IKB I5 4G 4G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DE00LCUS
Notebook IP 330-15IKB I3 4G 4G 128G 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DE0043US
Notebook IP 330-15IKB I7 8G 4G 1T 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DE01THUS
Notebook IP 330-15IKB I5 4G 4G 256G 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DE0029US
Notebook IP 330-15IKB I5 4G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DJ0007US
Notebook IP 330-15IKB Touch I3 2G4G1T10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DJ0006US
Notebook IP 330-15IKB Touch I5 8G4G1T10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DJ0002US
Notebook IP 330-15IKB Touch I5 8G4G1T10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DJ0004US
Notebook IP 330-15IKB Touch I7 8G4G1T10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DJ0000US
Notebook IP 330-15IKB Touch I7 16G 1T10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DJ0003US
Notebook IP 330-15IKB Touch I5 4G4G1T10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DJ000AUS
Notebook IP 330-15IKB Touch I3 4G4G2T10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DJ0009CF
Notebook IP 330-15IKB Touch I5 8G4G1T10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DJ0008US
Notebook IP 330-15IKB TouchI716G1T16G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DJX003US
81DJ0002US S&D MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DJX009US
81DJ0004US REFURB MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DJX001US
81DJ0002US REFURB MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DJX010US
81DJ0004US S&D MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DJ000CUS
Notebook IP 330-15IKB TouchI716G1T16G10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DJ000DUS
Notebook IP 330-15IKB Touch I5 4G4G1T10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DK003UUS
Notebook IP 330-17IKB I3 2G 4G 2T 10H
Notebook
I3-7020U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DM0002US
Notebook IP 330-17IKB I3 2G 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DM001UUS
Notebook IP 330-17IKB I5 4G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DM000LUS
Notebook IP 330-17IKB I5 8G 4G 2T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DM000MUS
Notebook IP 330-17IKB I3 2G 4G 2T 10H
Notebook
I3-7020U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DM000PUS
Notebook IP 330-17IKB I7 8G 4G 2T 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DM008MUS
Notebook IP 330-17IKB I3 2G 4G 2T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DM0004US
Notebook IP 330-17IKB I5 8G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81DM0005US
Notebook IP 330-17IKB I7 16G 1T 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DM0007US
Notebook IP 330-17IKB I7 8G 4G 1T 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DM004VCF
Notebook IP 330-17IKB I3 2G 4G 1T 10H
Notebook
i3-8130U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81DM0001US
Notebook IP 330-17IKB I7 16G 1T 16G 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DMX009US
81DM0005US REFURB MTM
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81DMX007US
81DM0004US REFURB MTM
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81FK009UUS
Notebook IP 330-15ICH I7 8G 4G 1T 16G10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FK0002US
Notebook IP 330-15ICH I5 4G 4G 1T 10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81FK0008US
Notebook IP 330-15ICH I7 16G 1T 128G 10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FK0007US
Notebook IP 330-15ICH I7 8G 4G 1T 10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FK0000US
Notebook IP 330-15ICH I5 4G 4G 1T 10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81FK0001US
Notebook IP 330-15ICH I7 16G 1T 10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FK009VUS
Notebook IP 330-15ICH I5 4G 4G 1T 16G10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81FK009TUS
Notebook IP 330-15ICH I7 16G 1T 16G 10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FK00ECUS
Notebook IP 330-15ICH I5 4G 4G 1T128G10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
6
CDX-0006C.0006
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
LENOVO
81FK00DBUS
Notebook IP 330-15ICH I5 4G 4G 2T 10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81FL006FUS
Notebook IP 330-17ICH I7 8G 4G 1T 16G10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FL0003US
Notebook IP 330-17ICH I5 4G 4G 1T 10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81FL0004US
Notebook IP 330-17ICH I7 16G 1T 128G 10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FL0005US
Notebook IP 330-17ICH I7 8G 4G 1T 10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FL0066US
Notebook IP 330-17ICH I7 8G 4G 1T 16G10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FL0095US
Notebook IP 330-17ICH I7 8G 4G 1T 16G10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FL0000US
Notebook IP 330-17ICH I7 16G 1T 10H
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81FL0002US
Notebook IP 330-17ICH I5 4G 4G 1T 10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81FL0001US
Notebook IP 330-17ICH I5 4G 4G 1T 10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81FLX007US
81FL0066US REFURB MTM
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81G20086US
Notebook IP 330-14IKB I3 4G 4G 1T 10H
Notebook
i3-7020U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
81G20085US
Notebook IP 330-14IKB I5 4G 4G 1T 10H
Notebook
i5-8250U
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
81G20084US
Notebook IP 330-14IKB I7 8G 4G 1T 10H
Notebook
i7-8550U
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
81HD0003US
Notebook LN LegionY730-15ICHI716G1T12810
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81HD000NUS
Notebook LN LegionY730-15ICHI58G1T16G10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81HD000PUS
Notebook LN LegionY730-15ICHI716G2T25610
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81HDCTO1WW
ASSEMBLY Lenovo Legion Y730-15ICH
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81HD001SUS
Notebook LN LegionY730-15ICHI58G1T16G10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81HD001TUS
Notebook LN LegionY730-15ICHI516G1T25610
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81HG0004US
Notebook LN LegionY730-17ICHI716G1T12810
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81HGCTO1WW
ASSEMBLY Lenovo Legion Y730-17ICH
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81HG001PUS
Notebook LN LegionY730-17ICHI716G1T25610
Notebook
i7-8750H
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
81HG000TUS
Notebook LN LegionY730-17ICHI58G1T16G10H
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81HG001HUS
Notebook LN LegionY730-17ICHI516G1T12810
Notebook
i5-8300H
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
81SQ000BUS
NB IP FLEX-14IWL I5 4G 4G 512G 10H
Notebook
i5-8265U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
81SQ0001US
NB IP FLEX-14IWL I5 4G 4G 512G 10H
Notebook
i5-8265U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
81SQ0003US
Notebook IP FLEX-14IWL I7 4G 4G 512G 10H
Notebook
i7-8565U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
81SQ0008US
Notebook IP FLEX-14IWL I7 16G 512G 10H
Notebook
i7-8565U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
81SQ0000US
NB IP FLEX-14IWL I5 4G 4G 256G 10H
Notebook
i5-8265U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I5
81SQ000MUS
Notebook IP FLEX-14IWL I7 4G 4G 256G 10H
Notebook
i7-8565U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
81SR000BUS
Notebook IP FLEX-15IWL I7 4G 4G 512G 10H
Notebook
i7-8565U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
81SR000FUS
Notebook IP FLEX-15IWL I7 16G1TB512G10H
Notebook
i7-8565U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
81SR000DUS
Notebook IP FLEX-15IWL I7 16G 512G 10H
Notebook
i7-8565U
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
4XG0G89074
CPU_BO LTS RD350 XEON E5-2630 V4
SERVER Option
1272
14nm
BROADWELL
INTEL(R)XEON(R)
4XG0G89078
CPU_BO LTS TD350 XEON E5-2620 V4
SERVER Option
1272
14nm
BROADWELL
INTEL(R)XEON(R)
4XG0G89079
CPU_BO LTS RD350 XEON E5-2620 V4
SERVER Option
1272
14nm
BROADWELL
INTEL(R)XEON(R)
4XG0G89080
CPU_BO LTS RD450 XEON E5-2620 V4
SERVER Option
1272
14nm
BROADWELL
INTEL(R)XEON(R)
4XG0G89090
CPU_BO LTS RD450 XEON E5-2603 V4
SERVER Option
1272
14nm
BROADWELL
INTEL(R)XEON(R)
4XG0G89093
CPU_BO LTS TD350 Xeon E5-2623 v4
SERVER Option
1272
14nm
BROADWELL
INTEL(R)XEON(R)
4XG0G89094
CPU_BO LTS RD350 Xeon E5-2623 v4
SERVER Option
1272
14nm
BROADWELL
INTEL(R)XEON(R)
70TT0025UX
SERVER TS TS460 E31240V6 RAID520I
Enterprise Product Group
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
70TE0011UX
Server TS RS160 E31240V6 121i
SRV
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
70TG001SUX
Server TS RS160 E31230V6 121i
SRV
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
70TT0020UX
Server TS TS460 E31230V6 121i
Enterprise Product Group
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
70UB000AUX
Server TS TS150 E31225V6 121i
Enterprise Product Group
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
7X02CTO1WW
ThinkSystem SR630 - 3yr Warranty
SRV
1272
14nm
SKYLAKE
INTEL(R) XEON(R) PLATINUM
9532EOU
Flex System x240 M5 Compute Node
SRV
1272
14nm
BROADWELL
INTEL(R)XEON(R)
3633KTU
LENOVO SYSTEM X3250 M6 E3-1270 M1215
SRV
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
3633KSU
LENOVO SYSTEM X3250 M6 E3-1240 M1215
SRV
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
7Y46CTO1WW
ThinkSystem ST250 - 1yr Warranty
ThinkSystem
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
7X83XV1T00
Lenovo ThinkAgile HX3320 6148x2.0
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X06TD3800
ThinkSystem SR650 6140x2 32GBx24
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7Y94S0MR00
ThinkAgile VX 2U Node 6130x2 64GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X02S4C400
ThinkSystem SR630 6130x2 32GBx24
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7
CDX-0006C.0007
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
LENOVO
7X83S0R800
Lenovo ThinkAgile HX3320 5120x2 16GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X02S6F200
ThinkSystem SR630 5120x2 32GBx8
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7XG7A05536
SR630 Xeon 5118 12C/105W/2.3GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X06A05XNA
ThinkSystem SR650 5118 32G
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X10100QNA
ThinkSystem ST550 4110 32GB
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7Y37S06K00
ThinkSystem SR670 5118x2 32GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X84S0WW00
Lenovo ThinkAgile HX7520 6150x2 64GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7Y37S29S00
ThinkSystem SR670 6142x2.0 32GBx12.0
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X06XT7G00
ThinkSystem SR650 6136x2 16GBx24
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X83S1G000
Lenovo ThinkAgile HX3320 6136x2 32GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7XG7A05590
SR650 Xeon 6126 12C/125W/2.6GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X84S0CV00
Lenovo ThinkAgile HX5520 6126x2 16GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X06U1EB00
ThinkSystem SR650 6126x2 16GBx8
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X06A040NA
ThinkSystem SR650 6134 32GB
SRV
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X06TX5100
ThinkSystem SR650 6134x2 32GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7XG7A05605
SR650 Xeon 6134 8C/130W/3.2GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X02A01LNA
ThinkSystem SR630 5115x1 16Gx1
SRV
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7XG7A05551
SR630 Xeon 5115 10C/85W/2.4GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) GOLD
7X02A04JNA
ThinkSystem SR630 4116x1 32Gx1
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7XG7A05532
SR630 Xeon 4116 12C/85W/2.1GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X10A02PNA
ThinkSystem ST550 4116 32GB
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4XG7A07212
ST550 Xeon Silver 4116 12C/85W/2.1GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4XG7A07227
SR570 Xeon 4116 12C/85W/2.1GHz
DCG SERVER OPTIONS HIGH VOLUME
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X09CTO1WW
Server SP: ThinkSystem ST550 - 1yr Warra
Enterprise Product Group
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7Y89S0TM00
ThinkAgile HX1321 Node 4114 16GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X83S1GH00
Lenovo ThinkAgile HX3320 4114x2 16GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7Y89S0UN00
ThinkAgile HX1321 Node 4114 32GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X06UT8900
ThinkSystem SR650 4114x2 32GBx24
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X06TH0A00
ThinkSystem SR650 4114x2 16GBx4
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7XG7A05575
SR650 Xeon 4110 8C/85W/2.1GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X10A028NA
ThinkSystem ST550 4110 16G
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7Y03A02BNA
THINKSYSTEM SR570 SERVER 4110 16G
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X02A03UNA
ThinkSystem SR630 4110x1 16Gx1
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4XG7A07215
ST550 Xeon Silver 4110 8C/85W/2.1GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X10100NNA
ThinkSystem ST550 4110 16GB
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X99A03DNA
ThinkSystem SR590 Server 4110 16G
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X04W9TE00
ThinkSystem SR550 4110x1.0 16GBx1.0
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X02T6BT00
ThinkSystem SR630 4110x2.0 16Gx4.0
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4XG7A07263
SR590 Xeon 4110 8C/85W/2.1GHz
DCG SERVER OPTIONS HIGH VOLUME
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
4XG7A07195
SR550 Xeon 4110 8C/85W/2.1GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X04A04YNA
ThinkSystem SR550 4110 16G
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7Y89S0RT00
HX2321 Node 3YR 4110x2 32GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X83S0D200
Lenovo ThinkAgile HX1320 4110 8GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X04A057NA
ThinkSystem SR550 4110 16G
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7Y03S0CT00
ThinkSystem SR570 4110x2.0 16GBx2.0
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X08SGTE00
ThinkSystem SR530 4110 16GBx4
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X83S24T00
Lenovo ThinkAgile HX3320 4110x2 16GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X99T99U00
ThinkSystem SR590 4110 16GB
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X06TM7R00
ThinkSystem SR650 4110 16GBx12
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7X02S32N00
ThinkSystem SR630 4110x2 16GBx6
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) SILVER
7Y03A02JNA
ThinkSystem SR570 Server 3106 16G
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) BRONZE
4XG7A07218
ST550 Xeon Bronze 3106 8C/85W/1.7GHz
SERVER Option
1272
14nm
SKYLAKE
INTEL(R) XEON(R) BRONZE
7X08S3VG00
ThinkSystem SR530 3104x1.0 16Gx4.0
ThinkSystem
1272
14nm
SKYLAKE
INTEL(R) XEON(R) BRONZE
7Y46A002NA
ThinkSystem ST250 E-2174G 8GB
ThinkSystem
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
7Y49A01CNA
ThinkSystem ST50 Server E-2144G 8GB
ThinkSystem
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
8
CDX-0006C.0008
MATERIAL NUMBER
PRODUCT DESCRIPTION
PRODUCT TYPE
PROCESSOR #
PROCESS CODE
PROCESS NODE
Architecture
Processor
LENOVO
7Y46A019NA
THINKSYSTEM ST250 E-2136 8GB
ThinkSystem
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
7Y51S0HB00
ThinkSystem SR250 E-2136 16GBx4
ThinkSystem
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
7Y51S0PJ00
ThinkSystem SR250 E-2136 16GBx2
ThinkSystem
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
7Y51S05E00
ThinkSystem SR250 E-2136 16GB
ThinkSystem
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
7Y49A013NA
ThinkSystem ST50 Server E-2124G 8GB
ThinkSystem
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
9
CDX-0006C.0009
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
A0E-N305015-I06
942602
DUAL CORE N3050
911-7890-001
MB
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
A0F-N315015-I06
942600
QUAD CORE N3150
911-7890-103
MB
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
A0F-N316015-I06
947023
QUAD CORE N3160
911-7890-104
MB
1273
14nm
BRASWELL
INTEL(R) CELERON®
A0E-N370015-I06
942599
QUAD CORE N3700
9S6-AC1611-025
AIO
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
A0E-N371015-I06
947020
QUAD CORE N3710
9S6-AC1611-029
AIO
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
A0E-N371015-I06
947020
QUAD CORE N3710
9S6-B12011-056
DT
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
A0E-N371015-I06
947020
QUAD CORE N3710
9S6-AE9211-018
AIO
1273
14nm
BRASWELL
INTEL(R) PENTIUM(R)
A0F-N316015-I06
947023
QUAD CORE N3160
9S6-AC1611-024
AIO
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
A0F-N316015-I06
947023
QUAD CORE N3160
9S6-AA8B11-048
AIO
1273
14nm
BRASWELL
INTEL(R) CELERON(R)
A0B-5010U15-I06
939363
DUAL CORE I3-5010U
939-9A69-002
Server BB
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I3
A0E-G456000-I06
952994
DUAL CORE G4560
9S6-AAC111-021
AIO
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
A0B-5005U35-I06
940707
DUAL CORE i3-5005U
936-B09611-062
DT BB
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I3
A0B-5005U35-I06
940707
DUAL CORE i3-5005U
936-B09612-004
DT BB
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I3
A0D-5950H15-I06
943431
QUAD CORE i7-5950HQ
9S7-181212-263
NB
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
A0D-5500U15-I06
939360
DUAL CORE i7-5500U
9S6-B09611-251
DT
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
A13-2220125-I06
939362
DUAL CORE i5-5200U
9S6-B09611-225
DT
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I5
A13-2220125-I06
939362
DUAL CORE i5-5200U
9S9-9A75-004
Server
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I5
A13-2220125-I06
939362
DUAL CORE i5-5200U
939-9A75-003
Server BB
1272
14nm
BROADWELL
INTEL(R) CORE(TM) I5
A0D-5700H15-I06
943450
QUAD CORE i7-5700HQ
9S7-16J212-453
NB
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
A0D-5700H15-I06
943450
QUAD CORE i7-5700HQ
9S7-16H512-606
NB
1272
14nm
BROADWELL
INTEL (R) CORE (TM) I7
A0H-2176G00-I06
963450
6 CORE E-2176G
9S7-17A512-018
NB
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
A0H-2176M05-I06
963717
6 CORE E-2176M
9S7-17C532-293
NB
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
A0H-2176M05-I06
963717
6 CORE E-2176M
9S7-17C532-294
NB
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
A0H-2176M05-I06
963717
6 CORE E-2176M
9S7-17C632-200
NB
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
A0H-2176M05-I06
963717
6 CORE E-2176M
9S7-16P632-280
NB
1272
14nm
COFFEE LAKE
INTEL(R)XEON(R)
A0K-9900K00-I06
983354
8 CORE i9-9900K
9S6-B92621-002
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-9900K00-I06
983354
8 CORE i9-9900K
9S6-B91641-270
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-9900K00-I06
983354
8 CORE i9-9900K
9S6-B92631-054
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-9900K00-I06
983354
8 CORE i9-9900K
9S6-B92631-251
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-9900K00-I06
983354
8 CORE i9-9900K
9S6-B92631-253
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-9900K00-I06
983354
8 CORE i9-9900K
9S6-B92631-062
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0C-8400000-I06
960619
6 CORE i5-8400
9S7-1T3111-023
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8400000-I06
960619
6 CORE i5-8400
9S6-B91531-459
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8400000-I06
960619
6 CORE i5-8400
9S6-B92011-005
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8400000-I06
960619
6 CORE i5-8400
9S6-B92011-225
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8400000-I06
960619
6 CORE i5-8400
9S6-B92011-236
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8600K00-I06
960620
6 CORE i5-8600K
9S6-B91314-067
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8600K00-I06
960620
6 CORE i5-8600K
9S6-B91314-234
DT
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-1T3111-022
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-1T3131-060
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-1T3131-061
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-1T3131-059
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-1T3131-080
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
MSI
1
CDX-0007C
CDX-0007C.0001
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-1T3111-215
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-1T3131-208
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B90721-230
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92011-003
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91621-208
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91621-204
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91531-242
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
936-B92011-012
DT BB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
936-B92011-009
DT BB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92011-238
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91621-201
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B90721-223
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92012-002
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91531-457
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92011-004
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91621-040
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B90721-224
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91621-097
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B90721-232
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92011-202
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92011-237
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91531-458
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-17A512-005
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-17A512-008
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-17A512-007
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-17A512-006
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91711-030
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-091
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91621-095
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91611-007
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91621-093
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91711-027
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-069
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-084
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-086
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91621-094
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-074
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91711-068
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91611-006
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-085
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91711-028
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91711-065
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-233
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
2
CDX-0007C.0002
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-062
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91711-036
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-073
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92011-001
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91314-204
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
936-B92011-010
DT BB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91621-039
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B90721-233
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-16Q211-278
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-16Q211-287
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92621-021
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92621-003
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91611-008
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91711-029
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-13S
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-12S
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-09S
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-14S
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-17A311-267
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-17A311-269
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16Q211-276
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16Q211-274
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16JF42-200
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16R112-409
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16R112-249
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-17C612-239
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-16Q211-279
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-16Q211-286
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A311-08S
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-17C612-201
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A311-07S
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-446
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-664
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-077
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16JE32-016
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16JE32-057
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16JE32-061
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-499
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-444
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-069
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-627
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-657
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16R112-223
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
3
CDX-0007C.0003
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-221
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P732-209
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-17C722-028
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16JF42-042
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16JF42-260
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16JF42-275
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16R112-065
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16P612-071
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8300H05-I06
963720
QUAD CORE i5-8300H
9S7-16R312-030
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8400H05-I06
963721
QUAD CORE i5-8400H
9S7-16Q211-275
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8400H05-I06
963721
QUAD CORE i5-8400H
9S7-17A311-268
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8400H05-I06
963721
QUAD CORE i5-8400H
9S7-17A311-266
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0C-8400H05-I06
963721
QUAD CORE i5-8400H
9S7-16Q211-273
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17E112-055
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-418
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-412
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-282
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-031
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-421
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C512-012
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C512-676
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C512-456
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C512-641
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-803
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-077
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-439
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-602
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-609
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-017
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-024
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-030
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-056
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-055
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K622-018
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-448
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-456
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-663
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-012
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-011
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-605
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-013
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-438
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16L411-047
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
4
CDX-0007C.0004
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16L411-048
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q312-020
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-067
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-809
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-447
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-066
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-210
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-448
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-805
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-413
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-032
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-425
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16L411-046
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16L411-052
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K622-019
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K622-046
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K622-045
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-179E33-007
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17B512-045
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17B512-012
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P622-626
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P622-033
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P622-485
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P622-041
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P622-807
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-053
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-405
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-068
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-054
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-037
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-406
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-283
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-268
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-245
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-259
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q213-450
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q213-441
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q312-073
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q312-021
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JE32-015
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JE32-056
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-603
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-493
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
5
CDX-0007C.0005
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-672
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-447
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-025
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-010
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-626
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-609
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-014
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-179F43-011
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q213-442
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-16L411-061
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-181612-014
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-181612-027
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-181612-016
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-17A311-057
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-17A311-056
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-17A311-275
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-17A311-273
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-16K731-040
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-16K631-034
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-16K731-039
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-428
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JF42-035
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C632-077
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C632-281
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C632-078
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-243
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-291
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-045
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-244
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-051
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-270
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C532-606
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C532-258
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C532-292
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C532-605
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JF42-034
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JF31-037
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JF42-205
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C632-076
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C632-273
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-277
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-047
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-050
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
6
CDX-0007C.0006
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R112-007
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R112-222
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R112-088
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R112-066
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R112-248
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R112-264
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R112-410
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C622-001
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C622-403
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-445
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-076
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-625
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-238
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-239
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-624
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17B712-052
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17B712-064
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17B712-051
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K512-010
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K512-040
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K512-046
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K512-047
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K512-009
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-235
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-621
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-623
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-233
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-234
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-620
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q221-431
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P532-639
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P532-673
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P532-629
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-064
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-063
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-059
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C512-672
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C512-013
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17B712-016
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17B712-014
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-055
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-058
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-274
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
7
CDX-0007C.0007
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-276
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JE22-058
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-615
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-209
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-636
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-443
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-806
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-015
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-016
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-442
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-065
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P612-068
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-16Q221-615
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-16Q221-476
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A311-071
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A311-272
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A311-277
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A311-093
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A311-094
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P722-052
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q411-004
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q411-007
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P732-054
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17E212-049
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q411-005
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P722-053
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17E212-050
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A611-015
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A611-013
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q411-006
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P722-051
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C722-010
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17G111-091
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17G111-089
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-436
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16L511-032
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16L511-033
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A611-011
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17G111-204
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-042
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17G111-203
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B91641-273
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B91641-272
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
8
CDX-0007C.0008
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-040
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17G111-202
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-201
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K722-021
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P522-202
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C612-408
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K622-022
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P622-048
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-073
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-074
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q213-449
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-060
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-291
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-290
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P632-292
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P722-012
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17E212-021
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P622-824
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P732-013
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K512-064
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17E212-048
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-17A611-012
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-251
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-248
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-181612-035
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-249
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700K00-I06
960617
6 CORE i7-8700K
9S6-B91314-243
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C622-434
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B91641-271
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-267
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B91641-274
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A611-014
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JF42-276
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-041
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-805
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-252
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17G111-093
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q412-253
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17E212-022
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-250
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91911-051
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-080
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JE32-018
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
9
CDX-0007C.0009
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JF42-041
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P732-014
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16K512-033
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91314-252
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17E212-023
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S7-17A522-069
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92011-411
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R112-252
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17B712-026
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C512-077
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B92631-055
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16R312-029
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P512-226
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B92011-406
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q411-002
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B91318-278
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-9700K00-I06
983355
8 CORE i7-9700K
9S6-B91318-279
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16P622-823
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C622-437
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C512-078
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-079
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8850H05-I06
963719
6 CORE i7-8850H
9S7-17A311-039
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-059
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C622-041
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0K-8950H05-I06
975241
6 CORE i9-8950HK
9S7-16Q221-622
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I9
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C522-081
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17A311-040
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
607-17B71-02S
NB-MB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0C-8400000-I06
960619
6 CORE i5-8400
9S7-1T3111-216
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE(TM) I5
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C622-040
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16JF42-259
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17G111-205
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-17C632-209
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8750H05-I06
963718
6 CORE i7-8750H
9S7-16Q211-271
NB
1272
14nm
COFFEE LAKE
INTEL(R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S7-17A512-026
NB
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0D-8700000-I06
960618
6 CORE i7-8700
9S6-B91314-230
DT
1272
14nm
COFFEE LAKE
INTEL (R) CORE (TM) I7
A0F-N400005-I06
961640
DUAL CORE N4000
9S6-AAC211-005
AIO
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
A0F-N400005-I06
961640
DUAL CORE N4000
9S6-AAC211-007
AIO
1273
14nm
GEMINI LAKE
INTEL(R) CELERON(R)
A0E-N500005-I06
961638
QUAD CORE N5000
9S6-AAC211-025
AIO
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
A0E-N500005-I06
961638
QUAD CORE N5000
9S6-AAC211-008
AIO
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
A0E-N500005-I06
961638
QUAD CORE N5000
9S6-AAC211-006
AIO
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
A0E-N500005-I06
961638
QUAD CORE N5000
9S6-B17111-010
DT
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
A0E-N500005-I06
961638
QUAD CORE N5000
9S6-B17111-011
DT
1273
14nm
GEMINI LAKE
INTEL(R) PENTIUM(R) SILVER
10
CDX-0007C.00010
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0B-7100000-I06
954033
DUAL CORE i3-7100
9S6-AC1711-212
AIO
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0B-7100000-I06
954033
DUAL CORE i3-7100
9S6-AAC111-028
AIO
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0B-7100000-I06
954033
DUAL CORE i3-7100
9S6-AAC111-029
AIO
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0B-7100000-I06
954033
DUAL CORE i3-7100
9S6-AAC111-002
AIO
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0B-7100000-I06
954033
DUAL CORE i3-7100
9S6-AC1711-087
AIO
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0B-7100000-I06
954033
DUAL CORE i3-7100
9S6-AAC111-053
AIO
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0B-7100000-I06
954033
DUAL CORE i3-7100
9S6-AAC111-052
AIO
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0B-7100000-I06
954033
DUAL CORE i3-7100
9S6-AC1711-083
AIO
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0C-7200U25-I06
953353
DUAL CORE i5-7200U
9S6-AEC113-009
AIO
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7200U25-I06
953353
DUAL CORE i5-7200U
936-B15921-020
DT BB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7200U25-I06
953353
DUAL CORE i5-7200U
936-B15921-033
DT BB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7200U05-I06
951957
DUAL CORE i5-7200U
9S7-16J712-058
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7200U05-I06
951957
DUAL CORE i5-7200U
9S7-179773-026
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7200U05-I06
951957
DUAL CORE i5-7200U
936-B14211-006
DT BB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7200U25-I06
953353
DUAL CORE i5-7200U
939-9A95-005
IPS-BB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0H-E315025-I06
952951
QUAD CORE E3-1505MV6
9S7-16H812-675
NB
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
A0H-E315025-I06
952951
QUAD CORE E3-1505MV6
9S7-17A131-687
NB
1272
14nm
KABY LAKE
INTEL(R)XEON(R)
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16J962-265
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16J962-1407
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16J962-2011
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16P112-228
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16J962-407
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16J962-624
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16M312-010
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16J942-285
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16JD21-093
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7300H05-I06
952959
QUAD CORE i5-7300HQ
9S7-16JD21-280
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-020
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-258
DT
1273
14nm
KABY LAKE
INTEL(R) CORE(TM) I6
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-242
DT
1274
10nm
KABY LAKE
INTEL(R) CORE(TM) I7
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-274
DT
1275
10nm
KABY LAKE
INTEL(R) CORE(TM) I8
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-053
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I9
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-268
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I10
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-091
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I11
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-028
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I12
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B09031-264
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I13
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-AE9311-069
AIO
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I14
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-AE9311-054
AIO
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I15
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90111-224
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I16
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-047
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I17
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B91011-020
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I18
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-261
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I19
A0C-7400010-I06
952986
QUAD CORE i5-7400
9S6-B90611-086
DT
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I20
11
CDX-0007C.00011
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0C-8250U05-I06
959160
QUAD CORE i5-8250U
9S7-14B121-060
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0C-8250U05-I06
959160
QUAD CORE i5-8250U
9S7-14B141-064
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0E-G456000-I06
952994
DUAL CORE G4560
9S6-AAC111-026
AIO
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
A0C-8250U05-I06
959160
QUAD CORE i5-8250U
9S7-14B141-269
NB
1272
14nm
KABY LAKE
INTEL(R) CORE(TM) I5
A0F-G393000-I06
954043
DUAL CORE G3930
9S6-AAC111-023
AIO
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
A0F-G393000-I06
954043
DUAL CORE G3930
9S6-AAC111-027
AIO
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
A0B-7100U05-I06
951959
DUAL CORE i3-7100U
936-B14211-007
DT BB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0D-7500U05-I06
951958
DUAL CORE i7-7500U
936-B14211-005
DT BB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7500U05-I06
951958
DUAL CORE i7-7500U
9S7-16JA11-013
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7500U05-I06
951958
DUAL CORE i7-7500U
9S7-16JA11-002
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7500U05-I06
951958
DUAL CORE i7-7500U
9S7-16JA21-017
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-077
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90111-217
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-037
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B09031-281
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91511-008
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-073
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91521-071
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91521-088
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B09031-267
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90611-089
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91511-021
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90611-271
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90611-405
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-063
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91511-007
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90111-215
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-062
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90612-096
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90611-202
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90611-018
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90111-216
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-058
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91521-252
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90611-217
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90611-267
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90612-070
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91521-036
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91521-070
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B91511-006
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-013
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-057
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90611-090
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
12
CDX-0007C.00012
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-078
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90612-272
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B90711-036
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700010-I06
953004
QUAD CORE i7-7700
9S6-B09031-246
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K222-10S
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179993-402
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1067
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179C11-053
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179C11-001
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179C11-062
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179C11-079
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179C11-068
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B412-009
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J911-059
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179577-1083
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179577-1082
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179577-1091
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179577-1032
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179577-1093
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179577-1210
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179C11-080
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1896
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBC2-1029
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBC2-1038
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A121-1006
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A121-1226
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A121-693
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-178541-448
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-178554-638
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-178554-639
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799E5-1097
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799E5-1440
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799E5-1463
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799E5-863
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799E5-1227
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799E5-1218
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799E5-699
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBA1-837
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBA1-1061
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBA1-836
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBB2-1008
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBC2-873
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB92-1264
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
13
CDX-0007C.00013
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBC2-877
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBE2-1044
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JBE2-1048
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J932-264
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179941-030
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB12-466
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179B93-281
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16L231-239
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16L231-240
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16L231-238
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179BC3-677
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799B3-622
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799B3-615
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-250
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-298
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-402
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-066
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-045
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-249
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-256
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-003
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C312-008
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C312-023
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A211-215
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179B93-284
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179BCC-651
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179BCC-848
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179BCC-668
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179BCC-650
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-625
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-056
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B112-223
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B112-224
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B112-441
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B112-466
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B112-444
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B112-225
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A211-214
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-14A332-069
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-14A332-210
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-620
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-2027
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-2013
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
14
CDX-0007C.00014
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-2631
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1645
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-2089
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1273
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1408
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1427
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1646
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-2070
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1096
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB12-822
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB12-659
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JD21-001
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JD21-279
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16M312-008
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179947-027
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB92-661
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB92-653
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799C9-666
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-001
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-202
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-212
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-096
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-213
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-075
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB82-644
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB12-694
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799B3-621
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799B3-667
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9C2-1045
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799D3-1250
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799D3-1214
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J572-1862
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J572-1861
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799D3-1213
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179B11-416
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179B11-418
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179B11-665
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0F-3865U05-I06
953360
DUAL CORE 3865U
936-B15921-019
DT BB
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
A0F-3865U05-I06
953360
DUAL CORE 3865U
9S6-AEC113-025
AIO
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
A0F-3865U05-I06
953360
DUAL CORE 3865U
9S6-AEC113-026
AIO
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179B11-865
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J572-1833
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J572-1828
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
15
CDX-0007C.00015
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J572-1832
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-021
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-002
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K332-024
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K322-066
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K332-023
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K412-016
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179941-658
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179941-096
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179B11-471
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K232-280
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K222-610
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K222-467
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K232-290
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P112-215
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-002
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K412-060
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K412-061
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0E-4415U05-I06
953359
DUAL CORE 4415U
9S6-B15921-019
DT
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
A0E-4415U05-I06
953359
DUAL CORE 4415U
9S6-AEC113-023
AIO
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
A0E-4415U05-I06
953359
DUAL CORE 4415U
9S6-AEC113-024
AIO
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K412-062
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B312-089
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B312-001
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B312-033
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17B312-060
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9I2-1452
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9I2-2096
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9I2-2025
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9I2-2088
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-067
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17C112-252
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB42-463
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179985-028
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9C2-1046
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9F1-1095
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9B2-2223
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JB42-408
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K212-228
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K222-294
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K212-275
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K212-674
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K222-293
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
16
CDX-0007C.00016
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K212-230
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K212-252
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K212-229
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K222-401
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A121-1005
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A121-1039
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A121-865
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-17A121-887
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16P312-008
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9B2-2076
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K312-001
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K322-206
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K312-034
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K312-078
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K322-063
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JC12-034
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JC12-003
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7920H05-I06
952952
QUAD CORE i7-7920HQ
9S7-181542-253
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7920H05-I06
952952
QUAD CORE i7-7920HQ
9S7-181542-252
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7920H05-I06
952952
QUAD CORE i7-7920HQ
9S7-181542-213
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7920H05-I06
952952
QUAD CORE i7-7920HQ
9S7-181542-212
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7920H05-I06
952952
QUAD CORE i7-7920HQ
9S7-16K222-407
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16JC12-041
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179BB3-473
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J932-055
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-179BC3-670
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7920H05-I06
952952
QUAD CORE i7-7920HQ
9S7-16K322-040
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-1799A8-444
NB-BB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K232-297
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K332-067
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J9B2-1428
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16J962-1227
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-178541-450
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-16K412-253
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700H05-I06
952957
QUAD CORE i7-7700HQ
9S7-14A332-072
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91211-014
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91312-013
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91312-016
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91211-052
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91312-052
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91312-012
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91312-015
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91312-028
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
17
CDX-0007C.00017
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91211-022
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S6-B91211-024
DT
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7700K10-I06
953006
QUAD CORE i7-7700K
9S7-1T1122-243
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0F-3865U05-I06
953360
DUAL CORE 3865U
9S6-AEC113-056
AIO
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A211-205
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A211-028
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A211-082
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A211-083
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A211-202
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-480
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-423
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0E-4415U05-I06
953359
DUAL CORE 4415U
9S6-AEC113-055
AIO
1272
14nm
KABY LAKE
INTEL(R) PENTIUM(R)
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-479
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-1T2111-067
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-1T2111-088
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-823
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-1038
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-1024
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-872
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-1095
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0B-7100U25-I06
953354
DUAL CORE i3-7100U
936-B15921-030
DT-BB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I3
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-1216
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-1084
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-858
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-867
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-1097
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-866
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A131-648
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A131-1205
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A131-1211
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-425
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-181542-266
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-17A121-426
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-1T2111-239
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-7820H05-I06
952955
QUAD CORE i7-7820HK
9S7-1T2111-251
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-8550U05-I06
959163
QUAD CORE i7-8550U
9S7-14B121-270
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-8550U05-I06
959163
QUAD CORE i7-8550U
9S7-14B121-059
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0D-8550U05-I06
959163
QUAD CORE i7-8550U
9S7-14B212-074
NB
1272
14nm
KABY LAKE
INTEL (R) CORE (TM) I7
A0F-3865U05-I06
953360
DUAL CORE 3865U
9S6-A61611-036
AIO
1272
14nm
KABY LAKE
INTEL(R) CELERON(R)
A0B-6100010-I06
945208
DUAL CORE i3-6100
9S6-AC1711-035
AIO
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I3
A0H-E315015-I06
944366
QUAD CORE E3-1505MV5
9S7-16H812-258
NB
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
A0H-E315015-I06
944366
QUAD CORE E3-1505MV5
9S7-178212-400
NB
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
A0H-E315015-I06
944366
QUAD CORE E3-1505MV5
9S7-178212-423
NB
1272
14nm
SKYLAKE
INTEL(R)XEON(R)
18
CDX-0007C.00018
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0C-6300H15-I06
944367
QUAD CORE i5-6300HQ
9S7-179675-001
NB
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6300H15-I06
944367
QUAD CORE i5-6300HQ
9S6-AEA111-041
AIO
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6300H15-I06
944367
QUAD CORE i5-6300HQ
9S6-AEA111-049
AIO
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6300H15-I06
944367
QUAD CORE i5-6300HQ
9S7-16J622-047
NB
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6300H15-I06
944367
QUAD CORE i5-6300HQ
9S7-179586-696
NB
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6400020-I06
947207
QUAD CORE i5-6400
9S6-B90611-009
DT
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6400020-I06
947207
QUAD CORE i5-6400
9S6-B90611-008
DT
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6400020-I06
947207
QUAD CORE i5-6400
9S6-B90111-070
DT
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6400020-I06
947207
QUAD CORE i5-6400
9S6-AF1C11-026
AIO
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6400020-I06
947207
QUAD CORE i5-6400
9S6-AE9311-022
AIO
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0C-6400020-I06
947207
QUAD CORE i5-6400
9S6-B90111-050
DT
1272
14nm
SKYLAKE
INTEL(R) CORE(TM) I5
A0E-G440010-I06
943908
DUAL CORE G4400
9S6-AA7811-058
AIO
1272
14nm
SKYLAKE
INTEL(R) PENTIUM(R)
A0D-6700010-I06
943465
QUAD CORE i7-6700
9S6-B90111-093
DT
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700010-I06
943465
QUAD CORE i7-6700
9S6-B90111-208
DT
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700010-I06
943465
QUAD CORE i7-6700
9S6-B90111-209
DT
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700010-I06
943465
QUAD CORE i7-6700
9S6-B90111-061
DT
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700020-I06
947202
QUAD CORE i7-6700
9S7-1T1111-028
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700K10-I06
943463
QUAD CORE i7-6700K
9S6-B90311-018
DT
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700K20-I06
947200
QUAD CORE i7-6700K
9S7-1T1112-091
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700K20-I06
947200
QUAD CORE i7-6700K
9S7-1T1112-096
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700K20-I06
947200
QUAD CORE i7-6700K
9S7-1T1111-002
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700K10-I06
943463
QUAD CORE i7-6700K
9S6-B90511-032
DT
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700K10-I06
943463
QUAD CORE i7-6700K
9S6-B90511-033
DT
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700K20-I06
947200
QUAD CORE i7-6700K
9S7-1T1111-029
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-178211-219
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-181412-012
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-178312-245
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-177514-202
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-175B12-003
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16JB42-218
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16JB42-248
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S6-AEA211-014
AIO
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16H712-002
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-17B112-016
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-17B112-033
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-17B112-025
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16JB12-001
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16L221-087
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16L221-078
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16L221-005
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-178312-219
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-178312-258
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-181512-023
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
19
CDX-0007C.00019
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-181512-055
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-17A111-058
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-17A111-202
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-17A111-226
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-17A111-060
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-17A111-200
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-17A111-017
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-181412-002
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-181412-274
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-1T2111-007
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-178344-030
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-178211-408
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-1T2111-02S
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-178233-805
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-1T2111-006
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6820H25-I06
944356
QUAD CORE i7-6820HK
9S7-17A111-201
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6920H15-I06
944371
QUAD CORE i7-6920HQ
9S7-178311-041
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16J562-1446
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16JB12-650
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16JB12-086
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16J512-004
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-179441-070
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16K212-422
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16K212-001
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16K212-034
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16K212-021
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16K212-469
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-179541-003
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-179B11-009
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-179B11-010
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6920H15-I06
944371
QUAD CORE i7-6920HQ
9S7-178312-218
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6920H15-I06
944371
QUAD CORE i7-6920HQ
9S7-178312-260
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6920H15-I06
944371
QUAD CORE i7-6920HQ
9S7-181412-257
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178211-034
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178211-831
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16J412-233
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-14A312-006
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178511-063
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16K212-041
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16J512-203
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178511-033
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16JB12-021
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178511-032
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
20
CDX-0007C.00020
COMPONENT NAME
MMID
CPU TYPE
MSI ITEM #
Product Type
PROCESS
CODE
PROCESS
NODE
ARCHITECTURE
BRAND
MSI
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178533-031
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178511-015
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-16H712-053
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178211-1252
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-178511-076
NB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0D-6700H15-I06
944368
QUAD CORE i7-6700HQ
9S7-179441-033
NB-BB
1272
14nm
SKYLAKE
INTEL (R) CORE (TM) I7
A0C-8265U15-I06
982921
QUAD CORE i5-8265U
9S7-14B321-200
NB
1272
14nm
WHISKEY LAKE
INTEL (R) CORE (TM) I5
A0C-8265U15-I06
982921
QUAD CORE i5-8265U
9S7-16S111-099
NB
1272
14nm
WHISKEY LAKE
INTEL (R) CORE (TM) I5
A0C-8265U15-I06
982921
QUAD CORE i5-8265U
9S7-16S111-200
NB
1272
14nm
WHISKEY LAKE
INTEL (R) CORE (TM) I5
A0D-8565U05-I06
982918
QUAD CORE i7-8565U
9S7-16S111-008
NB
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
A0D-8565U05-I06
982918
QUAD CORE i7-8565U
9S7-16S111-085
NB
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
A0D-8565U05-I06
982918
QUAD CORE i7-8565U
9S7-16S111-091
NB
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
A0D-8565U05-I06
982918
QUAD CORE i7-8565U
9S7-16S211-018
NB
1272
14nm
WHISKEY LAKE
INTEL(R) CORE(TM) I7
21
CDX-0007C.00021
CERTAIN INTEGRAGTED CIRCUITS AND PRODUCTS
CONTAINING THE SAME
Inv. No. 337-TA-1148
PUBLIC CERTIFICATE OF SERVICE
I, Lisa R. Barton, hereby certify that the attached INITIAL DETERMINATION
has been served via EDIS upon the Commission Investigative Attorney, John Shin, Esq.,
and the following parties as indicated, on 6/16/2020.
Lisa R. Barton, Secretary
U.S. International Trade Commission
500 E Street, SW, Room 112
Washington, DC 20436
On Behalf of Complainant Tela Innovations, Inc.:
William D. Belanger, Esq.
PEPPER HAMILTON LLP
125 High Street
19th Floor, High Street Tower
Boston, MA 02110-2736
Email: belangew@pepperlaw.com
☐ Via Hand Delivery
☐ Via Express Delivery
☐ Via First Class Mail
☒ Other: Email Notification
of Availability to Download
On Behalf of Respondents Acer, Inc., Acer America Corp.,
Asustek Computer Inc., Asus Computer International, Intel
Corporation, Lenovo Group Ltd., Lenovo (United States) Inc.,
Micro-Star International Co., Ltd., and MSI Computer Corp.:
Todd M. Friedman, Esq.
KIRKLAND & ELLIS LLP
601 Lexington Avenue
New York, New York 10022
Email: tfriedman@kirkland.com
☐ Via Hand Delivery
☐ Via Express Delivery
☐ Via First Class Mail
☒ Other: Email Notification
of Availability to Download
1
a
UNITED STATES INTERNATIONAL TRADE COMMISSION
Washington, D.C.
In the Matter of
CERTAIN INTEGRATED CIRCUITS AND Inv. No. 337-TA-1148
PRODUCTS CONTAINING THE SAME
ORDER NO. 34: CONSTRUING TERMS OF THE ASSERTED CLAIMS V
(October 2, 2019)
TABLE OF CONTENTS ~
INTRODUCTION ....................................................... ..'...................................................... .. 1
RELEVANT LAW .............................................................................................................. ..2
LEVEL OF ORDINARY SKILL ........................................................................................ ..7
THE ASSERTED PATENTS .............................................................................................. ..8
A. Technical Background ............................................................................................. ..9
B. The Asserted Claims .............................................................................................. .. 11
CLAIM CONSTRUCTION ............................................................................................... ..47
A. Construction of the Agreed-Upon Claim Term ..................................................... ..47
B. Construction of the Disputed Claim Tenns .............................................................48
1. “linear [conductive segment(s) / conductive structure(s)]’.’....................... ..48
2. “gate electrode” .......................................................................................... ..50
3. “gate electrode feature(s) / gate structure(s)” ............................................ ..53
4. “diffusion region(s)” .............................................................................. ..55
5. “[gate horizontal / first-metal vertical grid]; [secon'd-metal horizontal] grid;
[contact vertical] grid; [third-metal vertical] grid; [diffusion contact] grid”
56
6. “[gate / metal / contact] gridline(s)” .......................................................... ..59
7. “contact structure(s) / gate contact structure(s)” ........................................ ..60
8. “gate pitch” ................................................................................................ ..61
9. “each first-metal structure in the region having at least one adjacent first
metal structure positioned next to each of its sides in accordance with a y
coordinate spacing of less than or equal to 193 nanometers” .................... ..62 »
10. “wherein each second-metal structure in the region is positioned next to at
' least one other second-metal structure on a first side in accordance with a
second-metal pitch and is positioned next to at least one other second-metal
structure on a second side in accordance with the second-metal pitch” ......67
11. “each third-metal structure in the region having at least one adjacent third
metal structure positioned next to each of its sides in accordance with a y
coordinate spacing of less than or equal to 193 nanometers” .................... ..69
I. INTRODUCTION '
This investigation was instituted by the Commission on March 15, 2019 to determine
whether certain tri-gate integrated circuits and products which contain such circuits infringe U.S.
Patent Nos. 7,943,966 (“the ’966 patent”), 7,948,012 (“the ’012 patent”), 10,141,334 (“the ’334
patent”), 10,141,335 (“the ’335 patent”), and 10,186,523 (“the ’523 patent”) (altogether, “the
Asserted Patents’_’).See 84 Fed. Reg. 9558-9 (Mar. 15, 2019). On October 2, 2019, however, the
\
‘966 and .‘0l2 patents were terminated from the investigation. (Order No. 33.) The complainant is
Tela Innovations, Inc. (“Tela” or “Complainant”). The respondents are Acer, Inc., Acer America
Corporation, AsusTek Computer Inc., Asus Computer International, Intel Corporation, Lenovo
Group Ltd., Lenovo (United States) Inc., Micro-Star International Co., Ltd., and MSI Computer
Corp. (together, “Respondents”). The Commission Investigative Staff (“Staff”) is alsoa participant
(all collectively, “the Parties”).
Pursuant to Grormd Rule 8, a Markman hearing was held July 17, 2019, regarding the
interpretation of certain terms of the patent at issue. Prior to the hearing, the Parties filed a joint
claim construction chart setting forth a limited set of terms to be construed, with an updated joint
chart after the hearing (EDIS Doc. ID 683388; see Order No. 24). Tela and Respondents filed initial
and rebuttal claim construction briefs,‘ wherein each party offered its construction for the claim
1 The briefs and amended chart submitted by the Parties are referred to hereafter as:
CIMB l Complainant’s Corrected Initial Markman Brief
CRMB I Complainant’s Rebuttal Markman Brief
RIMB | Respondents’ Initial Markman Brief
RRMB I Respondents’ Rebuttal Markman Brief
SMB | Staff‘ s Markman Brief ,
JC | Updated Joint Claim Construction Chart
Hr’g Tr. | Markman hearing transcript
Tutorial | Joint Technology Tutorial i
Comp. Tutorial | Complainanfs Technology Tutorial
Resp. Tutorial | Respondents’ Technology Tutorial
l
terms in dispute,‘along with support for its proposed interpretation. The Staff filed a single brief.
Further, per my request, the Parties prepared and filed a joint tutorial on the technology at issue
(EDIS Doc. ID 680838), as well as their own individualized tutorials (EDIS Doc. IDs 682967,
682993).
II. RELEVANT LAW
“An infringement analysis entails two steps. The first step is determining the meaning and
scope of the patent claims asserted to be infringed. The second step is comparing the properly
construed claims to the device accused of infringing.” Markman v. WestviewInstruments, Inc., 52
F.3d 967, 976 (Fed. Cir. 1995) (en banc) (internal citations omitted), afl’d, 517 U.S. 370 (1996).
Claim construction is a “matter of law exclusively for the court.” Id. at 970-71. “The construction
of claims is simply a way of elaborating the normally terse claim language in order to understand
and explain, but not to change, the scope of the claims.” Embrex, Inc. v. Serv. Eng’g C0rp., 216
F.3d 1343, 1347 (Fed. Cir. 2000).
Claim construction focuses on the intrinsic evidence, which consists of the claims
themselves, the specification, and the prosecution history. See Phillips v. AWH Corp, 415 F.3d
1303, 1314 (Fed. Cir. 2005) (en bane); see also Markman, 52 F.3d at 979. As the Federal Circuit
in Phillips explained, courts must analyze each of these components to determine the “ordinary and
customary meaning of a claim tenn” as understood by a person of ordinary skill in the art at the time
of the invention. 415 F.3d at 1313. “Such intrinsic evidence is the most significant source of the
legally operative meaning of disputed claim language.” Bell Atl. Network Servs., Inc. v. Covad
C0mmc’ns Grp., Inc., 262 F.3d 1258, 1267 (Fed. Cir. 2001).
“It is a ‘bedrock principle’ of patent law that ‘the claims of a patent define the invention to
which the patentee is entitled the right to exclude.”’ Phillips, 415 F.3d at 1312 (quoting Innova/Pure
Water, Inc. v. Safari Water Filtration Sys., 1nc., 381 F.3d 1111, 1115 (Fed. Cir. 2004)). “Quite apart
2
from the written description and the prosecution history, the claims themselves provide substantial
guidance as to the meaning of particular claims terms.” Id. at 1314; see also Interactive Gift
Express, Inc. v. Compuserve Inc., 256 F.3d 1323, 1331 (Fed. Cir. 2001) (“In construing claims, the
analytical focus must begin and remain centered on the language of the claims themselves, for it is
that language that the patentee chose to use to ‘particularly point [ ] out and distinctly claim [ ] the
subject matter'which the patentee regards as his invention.”). The context in which a term is used
in an asserted claim can be “highly instructive.” Phillips, 415 F.3d at 1314. Additionally, other
claims in the same patent, asserted or unasserted, may also provide guidance as to the meaning of a
claim tenn. Id. “Courts do not rewrite claims; instead, we give effect to the terms chosen by the
patentee.” K-2 Corp. v. Salomon S.A., 191 F.3d 1356, 1364 (Fed. Cir. 1999). .
The specification “is always highly relevant to the claim construction analysis. Usually it is
dispositive; it is the single best guide to the meaning of a disputed term.” Phillips, 415 F.3d at 1315
(quoting Vitronics Corp. v. Conceptronic, Inc. , 90 F.3d 1576, 1582 (Fed. Cir. 1996)). “[T]he
specification may reveal a special definition given to a claim term by the patentee that differs from
the meaning it would otherwise possess. In such cases, the inventor’s lexicography govems.” Id. at
1316. “In other eases, the specification may reveal an intentional disclaimer, or disavowal, of claim
scope by the inventor.” Id. As a general rule, however, the particular examples or embodiments
discussed in the specification are not to be read into the claims as limitations. _1d.at 1323. In the
end, “[t]he construction that stays true to the claim language and most naturally aligns with the
patent’s description of the invention will be the correct construction.” Id. at 1316 (quoting
Renishaw PLC v. Marposs S0cieta' per Azioni, 158 F.3d 1243, 1250 (Fed. Cir. 1998)).
In addition to the claims and the specification, the prosecution history should be examined,
if in evidence. Phillips at 1317; see Liebel-Flarsheim C0. v. Medrad, Inc., 358 F.3d 898, 913 (Fed.
Cir. 2004). The prosecution history can “often inform the meaning of the claim language by
3 .
demonstrating how the inventor understood the invention and whether the inventor limited the
invention in the course of prosecution, making the claim scope narrower than it would otherwise
be.” Phillips, 415 F.3d at 1317; see Chimie v. PPG Indus. Inc., 402 F.3d 1371, 1384 (Fed. Cir.
2005) (“The purpose of consulting the prosecution history in construing a claim is to exclude any
interpretation that was disclaimed during prosecution.”).
When the intrinsic evidence does not establish the meaning of a claim, then extrinsic
evidence (i.e., all evidence external to the patent and the prosecution history, including dictionaries,
inventor testimony, expert testimony, and leamed treatises) may be considered. Phillips, 415 F.3d
at 1317. Extrinsic evidence is generally viewed as less reliable than the patent itself and its
prosecution history in determining how to define claim terms. Id. “The court may receive extrinsic
evidence to educate itself about the invention and the relevant technology, but the court may not use
extrinsic evidence to arrive at a claim construction that is clearly at odds with the construction
mandated by the intrinsic evidence.” Elkay Mfg. C0. v. Ebco Mfg. C0., 192 F.3d 973, 977 (Fed. Cir.
1999). ~
If, after a review of the intrinsic and extrinsic evidence, a claim term remains ambiguous,
the claim should be construed so as to maintain its validity. Phillips, 415 F.3d at 1327. Claims,
however, cannot be judicially rewritten in order to fulfill the axiom of preserving their validity. See
Rhine v. Casio, Inc., 183 F.3d 1342, 1345 (Fed. Cir. 1999). Thus, “if the only claim construction
that is consistent with the claim’s language and the written description renders the claim invalid,
then the axiom does not apply and the claim is simply invalid.” Id. V
The construction of a claim term is generally guided by its ordinary meaning. However,
courts may deviate from the ordinary meaning when: (1) “the intrinsic evidence shows that the
patentee distinguished that term from prior art on the basis of a particular embodiment, expressly
disclaimed subject matter, or described a particular embodiment as important to the invention”; or
1 4
1
(2) “the patentee acted as his own lexicographer and clearly set forth a definition of the disputed
claim term in either the specification or prosecution history.” Edwards Lzfesciences LLC v. Cook
Inc., 582 F.3d 1322, 1329 (Fed. Cir. 2009); see also GE Lighting S0ls., LLC v. AgiLight, Inc., 750
F.3d 1304, 1309 (Fed. Cir. 2014) (“the specification and prosecution history only compel departure
from'the plain meaning in two instances: lexicography and disavowalf’); Omega Eng ’g, Inc, v.
Raytek C0rp., 334 F.3d 1314, 1324 (Fed. Cir. 2003) (“[W]here the patentee has unequivocally
disavowed a certain meaning to obtain his patent, the doctrine of prosecution disclaimer attaches
and narrows the ordinary meaning of the claim congruent with the scope of the surrender.”); Rheox,
Inc. v. Entact, Inc., 276 F.3d 1319, 1325 (Fed. Cir. 2002) (“The prosecution history limits the
interpretation of claim terms so as to exclude any interpretation that was disclaimed during
prosecution”). Nevertheless, there is a “heavy presumption that a claim term carries its ordinary
and customary meaning.” CCS Fitness, Inc. v. Brunswick C0rp., 288 F.3d 1359, 1366 (Fed. Cir.
2002) (citations omitted). The standard for deviating from the plain and ordinary meaning is
“exacting” and requires “a clear and unmistakable disclaimer.” Thorner v. Sony Computer Entm ’t
Am. LLC, 669 F.3d 1362, 1366-67 (Fed. Cir. 2012); see Epistar Corp. v. Int ’l Trade Comm ’n, 566
F.3d -1321, 1334 (Fed. Cir. 2009) (requiring “expressions of manifest exclusion’ or restriction,
representing a clear disavowal of claim scope” to deviate from the ordinary meaning) (citation
omitted). As the Federal Circuit has explained, “[w]e do not read limitations from the specification
into claims; we do not redefine words. Only the patentee can do that.” Thorner, 669 F.3d at 1366.
A claim must also be definite. Pursuant to 35 U.S.C. § 112, second paragraph: “The
specification shall conclude withlone or more claims particularly pointing out and distinctly
claiming the subject matter which the applicant regards as his invention.” 35 U.S.C. § 112, 1]2. In
Nautilus, Inc. v. Biosig Instruments, Inc. , 134 S. Ct. 2120, 2129 (2014), the Supreme Court held that
§ 112,1]2 requires “that a patent’s claims, viewed in light of the specification and prosecution history
' 5
, .
infonn those skilled in the art about the scope of the invention with reasonable certainty.” A claim
is required to “provide objective boundaries for those of skill in the art,” and a claim term is
indefinite if it “might mean several different things and no informed and confident choice is among
the contending definitions.” Interval Licensing LLC _v.AOL, Inc., 766 F.3d 1364, 1371 (Fed. Cir.
2014). A patent claim that is indefinite is invalid. 35 U.S.C. § 282(b)(3)(A).
Courts are not required to construe every claim limitation of an asserted patent." See O2
Micro Intern. Ltd. v. Beyond Innovation Technology Co., 521 F.3d 1351, 1362 (Fed. Cir. 2008)
(citations omitted); Vanderlande Indus. Nederland BV v. Int ’l Trade Comm ’n, 366 F.3d 1311, 1323
(Fed. Cir. 2004) (noting that the administrative law judge need-only construe disputed claim terms).
Rather, “claim construction is a matter of resolution of disputed meanings and technical scope, to
clarify and when necessary to explain what the patentee covered by the claims.” Id. at 1362 (quoting
U.S. Surgical Corp. v. Ethicon, Inc., 103 F.3d 1554, 1568 (Fed. Cir. 1997)); see also Embrex, 216
F.3d at 1347 (“The construction of claims is simply a way of elaborating the nonnally terse claim
language in order to Lmderstandand explain, but not to change, the scope of the claims.”) (citation
omitted). '
In addition, “[a] determination that a claim term ‘needs no construction’ or has the ‘plain
and ordinary meaning’ may be inadequate when a term has more than one ‘ordinary’ meaning or
when reliance on a term‘s ‘ordinary’ meaning does not resolve the parties’ dispute.” 02 Micro, 521
F.3d at 1361. Claim construction, however, is not an “obligatory exercise in redundancy.” U.S.
Surgical Corp., 103 F.3d at 1568. “[M]erely rephrasing or paraphrasing the plain language of a
claim by substituting synonyms does not represent genuine claim construction.” C.R. Bard, Inc. v.
U.S. Surgical Corp, 388 F.3d 858, 863 (Fed. Cir. 2004).
6
III. LEVEL OF ORDINARY SKILL
Respondents’ opening brief offers no description of the person of ordinary skill in this art.
(See generally RIMB.) An expert declaration attached to the brief, however, offers the following:
In my opinion, with respect to the Asserted Patents, a person of
/ ordinary skill in the art would have had the equivalent of a bachelor’s
degree in electrical engineering, physics, or materials science and at
least three years of experience in semiconductor integrated circuit
design, layout, and/or fabrication. Additional graduate education
could substitute for professional experience, while significant
experience in the field might substitute for formal education.
(RIMB, Ex. 6 at 1]29.)
The Staff offers the following definition: _
The Staff submits that one of ordinary skill in the field of semi
conductor design and manufacturing, as related to the Asserted
Patents, would have at least a Bachelor of Science degree in electrical
or computer engineering or a related field and two to three years of
practical experience, such as with semi-conductor design and/or
manufacturing, or in lieu of practical experience at least a Master’s
degree in electrical or computer engineering or a related field. All of
the Asserted Patents relate back to the same provisional application,
No. 60/781,288, which was filed on March 9, 2006. The time period
for the state of the art is, therefore, around 2006. i
(SMB at 5.)
These proposed levels of skill are substantially similar. Tela initially proposed a level of
skill in the art which was not pertinent, and later submitted a corrected brief with a more helpful
proposal, although Tela never moved for leave to file it. In any event, Tela’s corrected proposed
definition is substantially similar to the other parties’. (CIMB at 13.)
Based on the technology and industry behind semiconductor integrated circuits at the 45
193 mn scale, at least three years of experience, as opposed to two, is an appropriate minimum for
a person with only a bachelor’s degree. The expected undergraduate majors for one of ordinary
skill working in hardware, as opposed to software or more theoretical fields, would be electrical
P 7
engineering and computer engineering. Physics and materials science might be appropriate, but
those disciplines provide less practical experience in design, layout work, and fabrication. And
although experience can substitute for education, and education for experience, at least some
practical experience would normally be required in a field focused on design and fabrication, even
for a person with a master’s degree.
On balance, a person having ordinary skill in the art at the time of invention would have: (1)
a bachelor’_sdegree in electrical engineering or computer engineering with at least three years of
experience in the field of semiconductor layout technology and integrated circuit design; (2) a
master’s degree in electrical engineering or computer engineering with at least two years of
experience in the same field; (3) a bachelor’s degree in physics or materials science with at least
five years of experience in the same field; or (4) a comparable combination of education and
experience. »
IV. THE ASSERTED PATENTS
The ’334 patent, entitled “Semiconductor Chip Including Region Having Rectangular
Shaped Gate Structures and First-Metal Structures,” was issued on November 27, 2018 to Scott T.
Becker and Michael C. Smayling. The ’334 patent reports assigmnent on its face to Tela
Innovations, Inc.
The ’335 patent, entitled “Semiconductor Cip [sic] Including Region Having Rectangular
Shaped Gate Structures and First Metal Structures,” was issued on November 27, 2018 to Scott T.
Becker and Michael C. Smayling. The ’335 patent reports an assigmnent on its face to Tela
Innovations, Inc. '
The ’523 patent, entitled “Semiconductor Chip Having Region Including Gate Electrode
Features Formed in Part from Rectangular Layout Shapes on Gate Horizontal Grid and First-Metal
Structures Formed in part from Rectangular Layout Shapes on at least Eight First-Metal Gridlines
8 .
of First-Metal Vertical Grid,” was issued on January 22,‘2019 to Scott T. Becker and Michael C.
Smayling. The ’523 patent reports an assignment on its face to Tela Innovations, Inc.
All three of the Asserted Patents issued from continuation applications, which claim priority
to a series of previous continuation applications, with anultimate claim of priority to Provisional
Application No. 60/781,288, filed on March 9, 2006. All Asserted Patents therefore essentially
share a common specification. (CIMB at 10 n.1; RIMB at 4 n.2.)
A. Technical Background _ '
A semiconductor is a material that has electrical conductivity properties falling between that
of a conductor and an insulator. (Tutorial at 2.) These conductive properties may be changed with
the addition of impurities. (Id. at 6.) The addition of different types of impurities results in two
different types of semiconductor, known as p-type and n-type. (Id.)
P-type and n-type semiconductors can be used with other materials to construct transistors.
(Tutorial at 10-13.) The relevant transistor here is a complementary metal oxide semiconductor, or
CMOS. (Id. at 11, 14.) A CMOS transistor is made of four basic components: (1) a body made of
one type of semiconductor; (2) a source region made of the other type of semiconductor; (3) a drain
region also made of the other type of semiconductor; (4) a gate made of metal and an oxide, where
the gate oxide functions as an insulator by separating the gate metal from the other components. (Id.
at 10-14.) The source region and the drain region together constitute the diffusion region? (’523
patent at 9:35-42 (“diffusion regions 203 represent selected regions of the base substrate 201 within
which impurities are introduced” and “diffusion contacts 205 are defined to enable connection
between source and drain diffusion regions 203”).)
2 Although this term is construed below with regard to positioning and the nature of the
substrate, the Parties do not dispute that the source and drain regions together form the diffusion
region. (SMB at 36.) 9
VVhena voltage is applied to the gate an electric field is formed under it, causing a conductive
channel connecting the source and drain to either appear or disappear, depending on the voltage and
the type of _semiconductorused to fonn the source and drain. (Tutorial at 10-16.) As a result, current
can be made to either flow or not flow from source to drain, and the transistor in effect acts as an
on/off switch. (Id. at 10, 13.) Logic circuits using this switching effect may be formed by
connecting many transistors together. (Tutorial at 10; Resp. Tutorial at 3-6.) A set of such circuits
disposed on a semiconductor substrate is called an integrated circuit, or chip. (Tutorial at 2.) A
silicon wafer is the substrate material for a CMOS chip. (Id. at 17.)
1The circuitry on a CMOS chip is formed through a multi-stage process, including layout, in
which the size, shape, and spacing of the chip’s features are specified, followed.by photolithography.
(Tutorial at 17, 19; see RIMB, Ex. 6 at 6 (“A layout represents the size, shape, and spacing gnlidelines
for a given layer in a transistor”); Comp. Tutorial at 2"(describing “Layout & Simulation” as
occurring before “Fabrication & Verification”).) In photolithography, a material called photoresist
is deposited on the wafer. (Id. at 17.) Photoresist tuidergoes chemical changes when exposed to
light. (Id. at 19.) In one embodiment of the photolithography process, a pattern of opaque chrome
material is placed on transparent quartz glass to form a photomask corresponding to at least a portion
of the layout. (Id. at 18.) The photomask is placed over the wafer, ultraviolet light is shined through
it, and the underlying photoresist chemically changes to match the photomask’s pattern. _(Id.)
Application of a solvent then removes some of the photoresist, leaving the remaining photoresist in
either a positive or negative pattern (depending on the photoresist) matching that of the photomask.
(Id. at 18-19.)
Further processing can then be used to build features on the wafer; for example, in areas
where photoresist has been removed, material may be added by deposition or removed by etching.
(Tutorial at 19; Comp. Tutorial at 15-28.) Repeated application of photolithography and additional
10
processing results in a “stack of layers” on the wafer. (’523 patent at 9:14-15; see generally ’523
patent at Fig. 2.) Within these layers, the various features forming the integrated circuit include
gates, gate electrodes, source and drain contacts, and other elements, all of which “enable . . . the
desired circuit connectivity.” (Id. at 9:56-57; see generally id. at 9:30-49.)
The density of circuitry can be increased by reducing feature size. (Tutorial at 20.)
Historically, feature size has been shrinking, and in many cases features are smaller than the
1
wavelength of the light used for photolithography. (Id.) Because of the small feature size,
interference patterns are generated during fabrication as shapes on the photomask interact with the
light. (’523 patent at 4:16-17.) These interference pattems cause the fabricated feature shape to
deviate fiom the designed feature shape, so much so that failure may result. (Id. at 4:22-24.)
In particular, when “two-dimensionally varying features are located in neighboring
proximity to each other, the light used to expose the features will interact in a complex and generally
unpredictable manner,” and may result in, for instance, “layout feature shape distortion.” (’523
patent at 7:41-44, 8:25.) Although “[c]orrection methodologies” exist to solve this problem,
“semiconductor product yield is reduced as a result of . . . two-dimensionally varying features
disposed in proximity to each other.” (Id. at 4:24, 8:17-21.) The patents in suit claim a new such
methodology focused on “topology,” or feature shape. (Id. at 7:36-37.) Specifically, the patents in
suit assert that “layout feature shape enhancement can be realized if the layout feature shapes are
rectangular, near the same size, and are oriented in the same direction.” (Id. at 9:8-9.)
B. The Asserted Claims '
The ’334 patent has 30 claims. As of the date ofthis order, claims 1, 2, 5, 6, 9, 11, 15, 20,
24, 29, and 30 are asserted in this investigation, either as infringed or under the domestic industry
ll
3
technical prong. The asserted claims read as follows (with the first instance of the agreed-upon
terms ll’1italics and the first instance of the disputed terms highlighted in bold):
A semiconductor chip, comprising:
gate structures formed within a region of the semiconductor chip, the gate
structures positioned in accordance with a gate horizontal grid that includes at least
sevengate gridlines, wherein adjacent gate gridlines are separated from each other
by a gate pitch of less than or equal to about 193 nanometers, each gate structure in
the region having a substantially rectangular shape with a vw'dthof less than or equal
to about 45 nanometers and positioned to extend lengthwise in a y-direction in a
substantially centered manner along an associated gate gridline, wherein each gate
gridline has at least one gate structure positioned thereon, wherein each pair of gate
structures that are positioned in an end-to-end manner are separated by a line end-to
line end gap of less than or equal to about 193 nanometers, wherein at least one gate
structure within the region is a first-transistor-type-only gate structure that forms at
least one gate electrode of at least one transistor of a first transistor type and does
not form a gate electrode of a transistor of a second transistor type, wherein at least
one gate structure within the region isa second-transistor-type-only gate structure
that fonns at least one gate electrode of at least one transistor of the second transistor
type and does not form a gate electrode of a transistor of the first transistor type,
wherein a total number of first-transistor-type-only gate structures within the region
is equal to a total number of second-transistor-type-only gate structures within the
region;
Claims 7, 10, 22, and 23 are not listed as asserted in the Notice of Investigation, 84 Fed. Reg.
9559 but they are implicated by dependent claims 9, l 1, and 24, which are asserted.
12
a first-metal layer formed above top surfaces of the gate structures within the
region of the semiconductor chip, the first-metal layer positioned first in a stack of
metal layers counting upward from top surfaces of the gate structures, the first-metal
layer separated from the top surfaces of the gate structures by at least one insulator
material, adjacent metal layers in the stack of metal layers separated by at least one
insulator material, wherein the first-metal layer includes first-metal structures
positioned in accordance with a first-metal vertical grid, the first-metal vertical grid
including at least eight first-metal gridlines, each first-metal structure in the region
having a substantially rectangllar shape and positioned to extend lengthwise in an x
direction in a substantially centered manner on an associated first-metal gridline,
each first-metal structure in the region having at least one adjacent first-metal
structure positioned next to each of its sides in accordance with a y-coordinate
spacing of less than or equal to 193 nanometers, wherein each pair of first-metal
structures that are positioned in an end-to-end manner are separated by a line end-to
line end gap of less than or equal to about 193 nanometers; and
at least six contact structures fonned within the region of the semiconductor
chip, wherein at least six gate structures within the region have a respective top
surface in physical and electrical contact with a corresponding one of the at least six
contact structures, each of the at least six contact structures having a substantially
rectangular shape with a corresponding length greater than a corresponding width
and with the corresponding length oriented in the x-direction, each of the at least six
contact structures positioned and sized to overlap both edges of the top surface of the
gate structure to which it is in physical and electrical contact,
13
/
wherein the region includes at least four transistors of the first transistor type
and at least four transistors of the second transistor type that collectively form part
of a logic circuit, wherein the logic circuit includes electrical connections that
collectively include first-metal structures positioned on at least five of the at least
eight first-rnetal gridlines.
2. The semiconductor chip as recited in claim 1, wherein the region includes a second
metal layer including second-metal structures positioned in accordance with a second-metal
horizontal grid, the second-metal horizontal grid including at least eight second-metal
gridlines, each second-metal structLu'ein the region having at least one adjacent second
metal structure positioned next to each of its sides in accordance with an x-coordinate
3
spacing of less than or equal to 193 nanometers, each second-metal structure in the region
having a substantially rectangular shape and positioned to extend lengthwise in the y
\
direction in a substantially centered manner along an associated second-metal gridline,
wherein at least eight of the at least eight second-metal gridlines have at least one second
metal structure positioned thereon, wherein each pair of second-metal structures that are
positioned in an end-to-end manner are separated by a line end-to-line end gap, wherein the
\
second-metal layer is positioned second in the stack of metal layers counting upward from
the top surfaces of the gate structures. <
5. The semiconductor chip as recited in claim 2, wherein the at least six contact
1
structures are positioned in accordance with a contact vertical grid, the contact vertical
grid including contact gridlines extending in the x-direction, each of the at least six contact
structures positioned to extend lengthwise in the x-direction in a substantially centered
manner along an associated contact gridline, and at least two of the at least six contact
14
structures positioned to also extend lengthwise in the x-direction in a substantially centered
manner along a corresponding first-metal gridline.
6. The semiconductor chip as recited in claim 2, wherein each second-metal structure
in the region is positioned next to at least one other second-metal structure on a first
side in accordance with a second-metal pitch and is positioned next to at least one other
second-metal structure on a second side in accordance with the second-metal pitch,
wherein the second-metal pitch is measured in the x-direction and is equal to the gate pitch.
7. The semiconductor chip as recited in claim 6, wherein each second-metal structure
in the region has a substantially equal width as measured in the x-direction.
9. The semiconductor chip as recited in claim 7, wherein the region has a size of 1930
nanometers as measured in the x-direction and a size of 1930 nanometers as measured in the
y-direction. »
10. The semiconductor chip as recited in claim 7, wherein the region includes a third
metal layer including third-metal structures positioned in accordance with a third-metal
vertical grid, the third-metal vertical grid including at least eight third-metal gridlines,
each third-metal structure in the region having at least one adjacent third-metal
structure positioned next to each of its sides in accordance with a y-coordinate spacing
of less than or equal to 193 nanometers, each third-metal structure in the region having a
substantially rectangular shape and positioned to extend lengthwise in the x-direction in a
substantially centered manner along an associated third-metal gridline, wherein at least eight
of the at least eight third-metal gridlineshave at least one third-metal structure positioned
thereon, wherein each pair of third-metal structures that are positioned in an end-to-end
manner are separated by a line end-to-line end gap, wherein the third-metal layer is
15
positioned third in the stack of metal layers counting upward from the top surfaces of the
gate structures. »
11. The semiconductor chip as recited in claim 10, wherein each second-metal
structure in the region is positioned next to at least one other second-metal structure
»
on a first side in accordance with a second-metal pitch and is positioned next to at least
one other second-metal structure on a second side in accordance with the second-metal
pitch, wherein the second-metal pitch is measured in the x-direction and is equal to the gate
pitch.
1
15. The semiconductor chip as recited in claim 1, wherein each transistor within the
region of the semiconductor chip is formed in part by a corresponding diffusion region,
wherein each diffusion region that forms part of at least one transistor within the region of
the semiconductor chip has a substantially rectangular shape.
20. The semiconductor chip as recited in claim 1, wherein the region includes a second
metal layer including second-metal structures positioned in accordance witha second-metal
horizontal grid, the second-metal horizontal grid including at least eight second-metal
gridlines, each second-metal structure in the region having at least one adjacent second
metal structure positioned next to each of its sides in accordance with an x-coordinate
spacing of less than or equal to 193 nanometers, each second-metal structure in the region
having a substantially rectangular shape and positioned to extend lengthwise in the y
direction in a substantially centered manner along an associated second-metal gridline,
wherein at least eight of the at least eight second-metal gridlines have at least one second
metal structure positioned thereon, wherein each pair of -second-metal structures that are
positioned in an end-to-end manner are separated by a line end-to-line end gap, wherein the
16
second-metal layer is positioned second in the stack of metal layers counting upward from
the top surfaces of the gate structures,
J wherein the region includes a third-metal layer including third-metal
structures positioned in accordance with a third-metal vertical grid, the third-metal
vertical grid including at least eight third-metal gridlines, each third-metal
structure in the region having at least one adjacent third-metal’ structure
positioned next to each of its sides in accordance with a y-coordinate spacing of
less than or equal to 193 nanometers, each third-metal structure in the third-metal
layer having a substantially rectangular shape and positioned to extend lengthwise in
the x-direction in a substantially centered manner along an associated third-metal
gridline, wherein at least eight of the at least eight third-metal gridlines have at least
one third-metal structure positioned thereon, wherein each pair of third-metal
structures that are positioned in an end-to-end manner are separated by a line end-to
line end gap, wherein the third-metal layer is positioned third in the stack of metal
layers upward from the top surfaces of the gate structures. ,
22. The semiconductor chip as recited in claim 20, wherein the at least four transistors
of the first transistor type include a first transistor of the first transistor type, wherein the at
least four transistors of the second transistor type include a first transistor of the second
transistor type, wherein a gate structure forming a gate electrode of the first transistor of
the first transistor type is positioned on a given gate gridline, wherein a gate structure
forming a gate electrode of the first transistor of the second transistor type is also positioned
on the given gate gridline, wherein no other transistor is positioned on the given gate gridline
between the gate structures that form the gate electrodes of the first transistor of the first
transistor type and the first transistor of the second transistor type, »
17
wherein each transistor within the region of the semiconductor chip is formed
in part by a corresponding diffusion region, wherein a diffusion region of the first
transistor of the first transistor type is electrically connected to a diffusion region of
the first transistor of the second transistor type,
wherein the at least six contact structures include a contact structure
substantially centered in the x-direction on the given gate gridline at a location
between the diffusion regions of the first transistor of the first transistor type and the
first transistor of the second transistor type.
23. The semiconductor chip as recited in claim 22, wherein an electrical connection
between the diffusion region of the first transistor of the first transistor type and the
diffusion region of the first transistor of the second transistor type includes at least one first
metal structure and at least one second-metal structure.
24. The semiconductor chip as recited in claim 23, wherein the gate electrode of the first
transistor of the first transistor type is electrically cormected to the gate electrode of the first
transistor of the second transistor type.
29. A semiconductor chip, comprising:
gate structures formed within a region of the semiconductor chip, the gate
structures positioned in accordance with a gate horizontal grid that includes at least
seven gate gridlines, wherein adjacent gate gridlines are separated from each other
by a gate pitch of less than or equal to about 193 nanometers, each gate structure in
the region having a substantially rectangular shape with a width of less than or equal
to about 45 nanometers and positioned to extend lengthwise in a y-direction in a
substantially centered manner along an associated gate gridline, wherein each gate
gridline has at least one gate structure positioned thereon, wherein each pair of gate
1 as
structures that are positioned in an end-to-end manner are separated by a line end—to
line end gap of less than or equal to about 193 nanometers, wherein at least one gate
structure within the region is a first-transistor-type-only gate structure that forms at
least one gate electrode of at least one transistor of a first transistor type and does
not form a gate electrode of a transistor of a second transistor type, wherein at least
one gate structure within the region is a second-transistor-type-only gate structure
that forms at least one gate electrode of at least one transistor of the second transistor
type and does not form a gate electrode of a transistor of the first transistor type,
wherein a total number of first-transistor-type-only gate structures within the region
is equal to a total number of second-transistor-type-only gate structures Within the
region; '
a number of contact structures fonned within the region of the
semiconductor chip, /wherein each gate structure that forms any transistor gate
electrode within the region has a respective top surface in physical and electrical
contact with a corresponding contact structure having a substantially rectangular
shape, wherein each contact structure that contacts a given gate structure that forrns
any transistor gate electrode does not contact another gate structure, wherein each
contact structure having a corresponding length greater than or equal to a
corresponding width is oriented to have its_corresponding length extend in an x
direction, wherein each contact structure that contacts a corresponding gate structure
is positioned to overlap at least one edge of the corresponding gate structure,
wherein each transistor within the region is formed in part by a corresponding
diffusion region, wherein each diffusion region that fonns part of any transistor
within the region has a substantially rectangular shape,
l 7
wherein the region includes at least four transistors of the first transistor type
and at least four transistors of the second transistor type that collectively fonn a
portion of a multiplexer or a portion of a latch, wherein at least one first-transistor
type-only gate structure within the region is included within the portion of the
multiplexer or the portion of the latch, wherein at least one second-transistor-type
only gate structure within the region is included within the portion of the multiplexer
or the portion of the latch,
wherein the at least four transistors of the first transistor type include a first
transistor of the first transistor type, wherein the at least four transistors of the second
transistor type include a first transistor of the second transistor type, wherein a first
gate structure forms both a gate electrode of the first transistor of the first transistor
type and a gate electrode of the first transistor of the second transistor type.
A semiconductor chip, comprising:
gate structures formed within a region of the semiconductorchip, the gate
structures positioned in accordance vw'tha gate horizontal grid that includes a
number of gate gridlines, wherein adjacent gate gridlines are separated from each
other by a gate pitch of less than or equal to about 193 nanometers, each gate
structure in the region having a substantially rectangular shape with a width of less
than or equal to about 45 nanometers and positioned to extend lengthwise in a y
direction in a substantially centered manner along an associated gate gridline,
wherein each gate gridline has at least one gate structure positioned thereon, wherein
each pair of gate structures that are positioned in an end-to-end manner are separated
by a line end-to-line end gap of less than or equal to about 193 nanometers, wherein
at least one gate structure within the region is a first-transistor-type-only gate
20
structure that forms at least one gate electrode of at least one transistor of a first
transistor type and does not form a gate electrode of a transistor of a second transistor
type, wherein at least one gate structure within the region is a second-transistor-type
only gate structure that forms at least one gate electrode of at least one transistor of
the second transistor type and does not fonn a gate electrode of a transistor of the
first transistor type, wherein a total ntnnber of first-transistor-type-only gate
structures within the region is equal to a total number of second-transistor-type-only
gate structures within the region; .
a number of contact structures fonned within the region of the
semiconductor chip, wherein each of at least six gate structures within the region has
a respective top surface in physical and electrical contact with a corresponding
contact stmcture having a substantially rectangular shape, wherein each contact
structure is centered in an x-direction on the gate structure with which it physical
contacts, wherein each contact structure that has the substantially rectangular shape
has a corresponding length greater than or equal to a corresponding width and is
oriented to have its corresponding length extend in an x-direction, wherein each
corresponding contact structure is in physical contact with only one gate structure,
wherein each corresponding contact structure is positioned to overlap at least one
edge of the gate structure contacted by the corresponding contact structure,
wherein each transistor within the region is formed in part by a corresponding
diffusion region, wherein each diffusion region that forms part of any transistor
within the region has a substantially rectangular shape,
wherein the region includes at least four transistors of the first transistor type
and at least four transistors of the second transistor type that collectively form a
21
portion of a multiplexer or a portion of a latch, wherein at least one first-transistor
type-only gate structure within the region is included within the portion of the
multiplexer or the portion of the latch, wherein at least one second-transistor-type
only gate structure within the region is included within the portion of the multiplexer
or the portion of the latch,
wherein both a gate electrode of a transistor of a first transistor type and a
gate electrode of a transistor of a second transistor type are formed by a same gate
structure within the region. i
The ’335 patent has 30 claims. As of the date of this order, claims 1, 2, 5, 6, 9, 11, l5, 20,
24, 29, and 30 are asserted in this investigation, either as infringed or under the domestic industry
technical prong/l The asserted claims read as follows (with the first instance of the agreed-upon
terms in italics and the first instance of the disputed terms highlighted in bold):
1. A semiconductor chip, comprising:
gate structures formed within a region of the semiconductor chip, the gate
structures formed in part based on corresponding gate structure layout shapes used
as an input to a lithography process, the gate structure layout shapes positioned in
accordance with a gate horizontal grid, the. gate horizontal grid including at least
seven gate gridlines, each gate structure layout shape having a substantially
rectangular shape and positioned to extend lengthwise in a y-direction in a
substantially centered manner along an associated gate gridline, each gate gridline
having at least one gate structure layout shape positioned thereon, wherein adjacently
positioned ones of the gate structures are separated from each other by a gate pitch
4 Claims 7, 10, 22, and 23 are not listed as asserted in the Notice of Investigation, 84 Fed. Reg.
9559, but they are implicated by dependent claims 9, ll, and 24, which are asserted.
22
1
of less than or equal to about 193 nanometersaeach of the gate structures having a
width of less than or equal to about 45 nanometers, wherein each pair of the gate
structures that are positioned in and end-to-end manner are separated from each other
by a line end-to-line end gap of less than or equal to about 193 nanometers;
a first-metal layer formed above top surfaces of the gate structures within the
region of the semiconductor chip, the first-metal layer positioned first in a stack of
metal layers counting upward fiom top surfaces of the gate structures, the first-metal
layer separated from the top surfaces of the gate structures by at least one insulator
material, adjacentimetal layers in the stack of metal layers separated by at least one
insulator material, wherein the first-metal layer includes first-metal structures formed
in part based on corresponding first-metal structure layout shapes used as an input to
a lithography process, the first-metal structure layout shapes positioned in
accordance with a first-metal vertical grid, the first-metal vertical grid including at
least eight first-metal gridlines, each first-metal structure layout shape having a
substantially rectangular shape and positioned to extend lengthwise in an x-direction
in a substantially centered manner on an associated first-metal gridline, each of the
first-metal structures having at least one adjacent first-metal structure positioned next
\
to each of its sides at a y-coordinate spacing of less than or equal to 193 nanometers,
wherein each pair of the first-metal structures that are positioned in an end-to-end
manner are separated by a line end-to-line end gap of less than or equal to about 193
nanometers; "
at least six contact structures fonned within the region of the semiconductor
chip, the at least six contact structures fonned in part utilizing corresponding at least
six contact structure layout shapes as an input to a lithography process, the at least
23
six contact structures formed in physical and electrical contact with corresponding
ones of at least six of the gate structures, each of the at least six contact structure
layoutshapes having a substantially rectangular shape and a corresponding length
greater than a corresponding width and with the corresponding length oriented in the
x-direction, each of the at least six contact structure layout shapes positioned and
sized to form its corresponding contact structure to overlap both edges of the top
surface of the gate structure to which it is in physical and electrical contact,
wherein at least one gate structure within the region is a first-transistor-type
only gate structure that forms at least one gate electrode of at least one transistor of
a first transistor type and does not form a gate electrode of a transistor of a second
transistor type, wherein at least one gate structure within the region is a second
transistor-type-only gate structure that forms at least one gate electrode of at least
one transistor of the second transistor type and does not form a gate electrode of a
transistor of the first transistor type, wherein a total nmnber of first-transistor-type
only gate structures within the region is equal to a total nmnber of second-transistor
type-only gate structures within the region, wherein the region includes at least four
transistors of the first transistor type and at least four transistors of the second
transistor type that collectively form part of a logic circuit.
2. The semiconductor chip as recited in claim 1, wherein the region includes a second
metal layer including second-metal structures fonned in part based on corresponding
second-metal structure layout shapes used as an input to a lithography process, the second
metal structure layout shapes positioned in accordance with a second-metal horizontal
grid, the second-metalhorizontal grid including at least eight second-metal gridlines, each
second-metal structure layout shape in the region having a substantially rectangular shape
24
and positioned to extend lengthwise in the y-direction in a substantially centered manner
along an associated second-metal gridline, wherein at least eight of the at least eight second
metal gridlines have at least one second-metal structure layout shape positioned thereon,
wherein each of the second-metal stnlctures has at least one adjacent second-metal structure
positioned next to each of its sides at an x-coordinate spacing of less than or equal to 193
nanometers, wherein each pair of the second-metal structures that are positioned in an end
to-end manner are separated by a line end-to-line end gap, wherein the second-metal layer
is positioned second in the stack of metal layers counting upward from the top surfaces of
the gate structures. _
5. The semiconductor chip as recited in claim 2, wherein the at least six contact
structure layout shapes are positioned in accordance with a contact vertical grid, the
contact vertical grid including contact gridlines extending in the x-direction, each of the at
least six contact structure layout shapes positioned to extend lengthwise in the x-direction in
a substantially centered manner along an associated contact gridline, and at least two of the
at least six contact structure layout shapes positioned to also extend lengthwise in the x
direction in a substantially centered manner along an associated first-metal gridline.
6. The semiconductor chip as recited in claim 2, wherein each second-metal structure
layout shape in the region is positioned next to at least one other second-metal structure
layout shape on a first side in accordance with a second-metal pitch and is positioned next
to at least one other second-metal structure layout shape on a second side in accordance with
the second-metal pitch, wherein the second-metal pitch is measured in the x-direction and is
equal to the gate pitch.
7. The semiconductor chip as recited in claim 6, wherein each second-metal structure
layout shape in the region has a substantially equal width as measured in the x-direction.
25
9. The semiconductor chip as recited in claim 7, wherein the region has a size of 1930
nanometers as measured in the x-direction and a size of 1930 nanometers as measured in the
y-direction.
10. The semiconductor chip as recited in claim 7, wherein the region includes a third
metal layer including third-metal structures formed in part based on corresponding third
metal structure layout shapes used as an input to a lithography process, the third-metal
structure layout shapes positioned in accordance with a third-metal vertical grid, the third
metal vertical grid including at least eight third-metal gridlines, each third-metal structure
layout shape in the region having a substantially rectangular shape and positioned to extend
lengthwise in the x-direction in a substantially centered manner along an associated third
metal gridline, wherein at least eight of the at least eight third-metal gridlines have at least
one third-metal structure layout shape positioned thereon, wherein each third-metal structure
in the region has at least one adjacent third-metal structure positioned next to each of its
sides at a y-coordinate spacing of less than or equal to 193 nanometers, wherein each pair of
the third-metal structures that are positioned in an end-to-end manner are separated by a line
end-to-line end gap, wherein the third-metal layer is positioned third in the stack of metal
layers counting upward from the top surfaces of the gate structures.
11. The semiconductor chip as recited in claim 10, wherein each second-metal structure
layout shape in the region is positioned next to at least one other second-metal structure
layout shape on a first side in accordance with a second-metal pitch and is positioned next
to at least one other second-metal structure layout shape on a second side in accordance with
the second-metal pitch, wherein the second-metal pitch is measured in the x-direction and is
equal to the gate pitch.
26
15. The semiconductor chip as recited in claim l, wherein each transistor within the
region of the semiconductor chip is formed in part by a corresponding diffusion region,
wherein each diffusion region that forms part of at least one transistor within the region of
the semiconductor chip has a substantially rectangular shape. '
20. The semiconductor chip as recited in claim 1, wherein the region includes a second
metal layer including second-metal structures formed in part based on corresponding
second-metal structure layout shapes used as an input to a lithography process, the second
metal structure layout shapes positioned in accordance with a second-metal horizontal
grid, the second-metal horizontal grid including at least eight second-metal gridlines, each
second-metal structure layout shape in the region having a substantially rectangular shape
and positioned to extend lengthwise in the y-direction in a substantially centered manner
along an associated second-metal gridline, wherein at least eight of the at least eight second
metal gridlines have at least one second-metal structure layout shape positioned thereon,
wherein each second-metal structure in the region has at least one adjacent second-metal
structure positioned next to each of its sides at an x-coordinate spacing of less than or equal
to 193 nanometers, wherein each pair of the second-metal structures that are positioned in
an end-to-end manner are separated by a line end-to-line end gap, wherein the second-metal
layer ispositioned second in the stack of metal layers counting upward from the top surfaces
of the gate structures,
wherein the region includes a third-metal layer including third-metal
structures formed in part based on corresponding third-metal structure layout shapes
used as an input to a lithography process, the third-metal structure layout shapes
positioned in accordance with a third-metal vertical grid, the third-metal vertical grid
including at least eight third-metal gridlines, each third-metal structure layout shape
27
in the third-metal layer having a substantially rectangular shape and positioned to
extend lengthwise in the x-direction in a substantially centered manner along an
associated third-metal gridline, wherein at least eight of the at least eight third-metal
gridlines have at least one third#metal structure layout shape positioned thereon,
wherein each third-metal structure in the region has at least one adjacent third-metal
structure positioned next to each of its sides at a y-coordinate spacing of less than or
equal to 193 nanometers, wherein each pair of the third-metal structures that are
positioned in an end-to-end manner are separated by a line end-to-line end gap,
wherein the third-metal layer is positioned third in the stack of metal layers counting
upward from the top surfaces of the gate structures.
22. The semiconductor chip as recited in claim 20, wherein the at least four transistors
of the first transistor type include a first transistor of the first transistor type, wherein the at
least four transistors of the second transistor type include a first transistor of the second
transistor type, wherein a gate structure that forms a gate electrode of the first transistor
of the first transistor type and a gate structure that forms a gate electrode of the first transistor
of the second transistor type are fonned to extend lengthwise along a same line, wherein no
other transistor is positioned on the same line between the gate structures that fonn the gate
electrodes of the first transistor of the first transistor type and the first transistor of the second
transistor type, _
' wherein each transistor within the region of the semiconductor chip is formed in part
by a corresponding diffusion region, wherein a diffusion region of the first transistor of the
first transistor type is electrically connected to a diffusion region of the first transistor of the
second transistor type, \
28
wherein the at least six contact structures include a contact structure substantially
centered in the x-direction on the same line at a location between the diffusion regions of the
first transistor of the first transistor type and the first transistor of the second transistor type.
Z3. The semiconductor chip as recited in claim 22, wherein an electrical cormection
between the diffusion region of the first transistor of the first transistor type and the
l
diffusion region of the first transistor of the second transistor type includes at least one first
metal structure and at least one second-metal structure.
24. The semiconductor chip as recited in claim 23, wherein the gate electrode of the first
transistor of the first transistor type is electrically connected to the gate electrode of the first
transistor of the second transistor type.
29. A semiconductor chip, comprising: t
gate structures formed within a region of the semiconductor chip, the gate
structures formed in part based on corresponding gate structure layout shapes used
as an input to a lithography process, the gate structure layout shapes positioned in
accordance with a gate horizontal grid that includes at least seven gate gri/dlines,
each gate structure layout shape having a substantially rectangular shape and
positioned to extend lengthwise in a y-direction in _asubstantially centered manner
along an associated gate gridline, each gate gridline having at least one gate structure
layout shape positioned thereon, wherein adjacently positioned ones of the gate
structures are separated from each other by a gate pitch of less than or equal to about
193 nanometers, each of the gate structures having a vsddthof less than or equal to
about 45 nanometers, wherein each pair of the gate structures that are positioned in
an end-to-end mamier are separated from each other by a line end-to-line end gap of
less than or equal to about 193 nanometers, wherein at least one gate structure within
L7
the region is a first-transistor-type-only gate structure that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form a gate
electrode of a transistor of a second transistor type, wherein at least one gate structure
within the region is a second-transistor-type-only gate structure that forms at least
one gate electrode of at least one transistor of the second transistor type and does not
form a gate electrode of a transistor of the first transistor type, wherein a total number
of first-transistor-type-only gate structures within the region is equal to a total
number of second-transistor-type-only gate structures VVltl'1iI1l;l’16 region,
wherein each gate structure that fomis any transistor gate electrode within the
region has a respective top surface in physical and electrical contact with a
corresponding contact structure formed in part based on a corresponding contact
structure layout shape having a substantially rectangular shape, wherein each contact
structure that contacts a given gate structure that fonns any transistor gate electrode
does not contact another gate structure, wherein each contact structure layout shape
has a corresponding length greater than or equal to a corresponding width and is
oriented to have its corresponding length extend in an x-direction, wherein each
contact structure that contacts a corresponding gate structure has its corresponding
contact structure layout shape positioned to overlap at least one edge of the gate
structure layout shape of the corresponding gate structure,
wherein the region includes at least four transistors of the frst transistor type
and at least four transistors of the second transistor type that collectively fonn a
portion of a multiplexer or a portion of a latch, wherein at least one first-transistor
type-only gate structure within the region is included within the portion of the
multiplexer or the portion of the latch, wherein at least one second-transistor-type
JU
30.
only gate structure within the region is included within the portion of the multiplexer
or the portion of the latch.
A semiconductor chip, comprising:
gate structures formed within a region of the semiconductor chip, the gate
structures formed in part based on corresponding gate structure layout shapes used
as an input to a lithography process, the gate structure layout shapes positioned in
accordance with a gate horizontal grid that includes a number of gate gridlines,
each gate structure layout shape having a substantially rectangular shape and
positioned to extend lengthwise in a y-direction in a substantially centered mamier
along an associated gate gridline, each gate gridline having at least one gate structure
layout shape positioned thereon, wherein adjacently positioned ones of the gate
structures are separated from each other by a gate pitch of less than or equal to about
193 nanometers, each of the gate structures having a width of less than or equal to
about 45 nanometers, wherein each pair of the gate structures that are positioned in
an end-to-end manner are separated from each other by a line end-to-line end gap of
less than or equal to about 193 nanometers, wherein at least one gate structure within
the region is a first-transistor-type-only gate structure that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form a gate
electrode of a transistor ofa second transistor type, wherein at least one gate structure
within the region is a second-transistor-type-only gate structure that forms at least
one gate electrode of at least one transistor of the second transistor type and does not
fonn a gate electrode of a transistor of the first transistor type, wherein a total number
of first-transistor-type-only gate structures within the region is equal to a total
number of second-transistor-type-only gate structures within the region,
3 l
wherein each of at least six gate structures within the region has a respective
top surface in physical and electrical contact with a corresponding at least six contact
structures that are formed in part based on corresponding contact structure layout
shapes having a substantially rectangular shape, wherein each of the at least six
contact structures is in physical contact with only one corresponding gate structure,
wherein each contact structure layout shape of the at least six contact structures is
centered in an x-direction on the gate structure layout shape of the gate structure with
which it physical contacts, wherein each contact structure layout shape of the at least
six contact structures has a corresponding length greater than or equal to a
corresponding width and is oriented to have its corresponding length extend in an x
direction, wherein each contact structure of the at least six contact structures has its
contact structure layout shape positioned to overlap at least one edge of the gate
structure layout shape of the gate structure that is contacted by the contact structure,
, wherein the region includes at least four transistors of the first transistor type
and at least four transistors of the second transistor type that collectively form a
portion of a multiplexer or a portion of a latch, wherein at least one first-transistor
type-only gate structure within the region is included within the portion of the
multiplexer or the portion of the latch, wherein at least one second-transistor-type
only gate structure within the region is included within the portion of the multiplexer
or the portion of the latch. _
The 523 patent has 28 claims. As of the date of this order, claims 1-12, l4-20, 22-24, and
26-28 are asserted in this investigation, either as infringed or under the domestic industry technical
32
5
prong. The asserted claims read as follows (with the first instance of the agreed-upon terms in
italics and the first instance of the disputed terms highlighted in bold): '
5
A semiconductor chip, comprising:
gate electrode features formed within a region of the semiconductor chip,
A
the gate electrode features formed in part based on corresponding gate electrode
feature layout shapes used as an input to a lithography process, the gate electrode
feature layout shapes positioned in accordance with a gate horizontal grid that
includes at least seven gate gridlines, wherein all gate gridlines extend in a y
direction, wherein adjacent gate giidlines are separated from each other by a gate
pitch, each gate electrode feature layout shape in the region having a substantially
rectangular shape and positioned to extend lengthwise in the y-direction in a
substantially centered manner along an associated gate gridline, wherein each gate
gridline has at least one gate electrode feature layout shape positioned thereon,
wherein at least one gate electrode feature layout shape within the region corresponds
to a gate electrode feature that forms at least one gate electrode of at least one
transistor of a first transistor type and does not fonn a gate electrode of a transistpr
of a second transistor type, whereinat least one gate electrode feature layout shape
within the region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of the second transistor type and does not form a
gate electrode of a transistor of the first transistor type;
at least six gate contact structures fonned within the region of the
semiconductor chip, the at least six gate contact structures fonned in part utilizing
Claim 25 is not listed as asserted in the Notice of Investigation, 84 Fed. Reg. 9559, but it is
implicated by dependent claim 26, which is asserted.
‘ 33
J
corresponding at least six gate contact structure layout shapes as an input to a
lithography process, wherein at least six gate electrode features within the region
have a respective top surface in physical and electrical contact with a corresponding
one of the at least six gate contact structures, each of the at least six gate contact
structure layout shapes having a substantially rectangular shape with a corresponding
length greater than a corresponding width and with the corresponding length oriented
in an x-direction, each of the at least six gate contact structure layout shapes
positioned and sized to overlap both edges of the gate electrode feature layout shape
corresponding to the gate electrode feature to which it is in physical and electrical
contact; and
' a first-metal layer formed above top surfaces of the gate electrode features
within the region of the semiconductor chip, the first-metal layer positioned first in
a stack of metal layers counting upward from top surfaces of the gate electrode
features, the first-metal layer separated from the top surfaces of the gate electrode
features by at least one insulator material, wherein the first-metal layer includes first
metal structures formed in part based on corresponding first-metal structure layout
shapes used as an input to a lithography process, wherein the first-metal structure
layout shapes are positioned in accordance with a first-metal vertical grid, the first
metal vertical grid including at least eight first-metal gridlines, wherein all first-metal
gridlines extend in the x-direction, wherein at least eight of the at least eight first
metal gridlines have at least one first-metal structure layout shape positioned thereon,
each first-metal structure layout shape in the region having a substantially
rectangular shape and positioned to extend lengthwise in the x-direction in a
substantially centered manner on an associated first-metal gridline,
34
wherein the region includes at least four transistors of the first transistor type
and at least four transistors of the second transistor type that collectively fonn part
of a logic circuit, wherein electrical connections within the logic circuit collectively
include at least five first-metal structures corresponding to at least five first-metal
structure layout shapes respectively positioned on at least five different first-metal
gridlines,
wherein each transistor within the region of the semiconductor chip is formed
in part by a corresponding diffusion region, wherein some diffusion regions within
the region of the semiconductor chip are physically and electrically contacted by at
least one diffusion contact structure, the at least one diffusion contact structure
formed in part utilizing corresponding at least one diffusion contact structure layout
shape as an input to a lithography process, each diffusion contact structure layout
shape within the region positioned in a substantially centered marmer along an
associated diffusion contact gridline of a diffusion contact grid, the diffusion contact
grid having a diffusion contact gridline-to-diffusion contact gridline spacing
measured in the x-direction equal to the gate pitch.
The semiconductor chip as recited in claim l, further comprising:
a second-metal layer formed above the first-metal layer within the region of
the semiconductor chip, the second-metal layer positioned second in the stack of
metal layers counting upward from top surfaces of the gate electrode features, the
second-metal layer separated from the first-metal layer by at least one insulator
material, the second-metal layer including second-metal structures formed in part
based on corresponding second-metal structure layout shapes used as an input to 11
lithography process, the second-metal layer layout shapes positioned in accordance
35
with a second-metal horizontal grid, the second-metal horizontal grid including at
least eight second-metal gridlines, wherein all second-metal gridlines extend in the
y-direction, wherein at least eight of the at least eight second-metal gridlines have at
least one second-metal structure layout shape positioned thereon, each second-metal
structure layout shape in the region having a substantially rectangular shape and
positioned to extend lengthwise in the y-direction in a substantially centered manner
along an associated second-metal gridline,
wherein some second-metal structures within the region are electrically
connected to at least one first-metal structure within the region tluough at least one
first-metal-to-second-metal via structure, each first-metal-to-second-metal via
structure within the region formed in part based on corresponding first-metal-to
second-metal via structure layout shape used as an input to a lithography process,
each first-metal-to-second-metal via structure layout shape within the region
positioned in a substantially centered manner along an associated second-metal
gridline.
3. The semiconductor chip as recited in claim 2, wherein each first-metal structure
layout shape in the region has a width measured in the y-direction that is either a first width
or a second width, the second width different than the first width, the first-metal layer
including at least one first-metal structure formed in part by a first-metal structure layout
shape that has the first width, the first-metal layer including at least one first-metal structure
formed in part by a first-metal layout shape that has the second width.
4. The semiconductor chip as recited in claim 3, wherein at least one gate electrode
feature within the region that forms at least one gate electrode of at least one transistor of
the first transistor type and does not fonn a gate electrode of a transistor of the second
36
transistor type is electrically connected to at least one gate electrode feature within the region
that forms at least one gate electrode of at least one transistor of the second transistor type
and does not fonn a gate electrode of a transistor of the first transistor type through an
electrical connection that includes at least one first-metal structure and at least one second
metal structure.
5. The semiconductor chip as recited in claim 2, wherein the at least six gate contact
structure layout shapes‘are positioned in accordance with a contact vertical grid, the
contact vertical grid including contact gridlines extending in the x-direction‘,each of the at
least six gate contact structure layout shapes positioned to extend lengthwise in the x
direction in a substantially centered manner along an associated contact gridline, and at least
two of the at least six gate contact structure layout shapes positioned to also extend
lengthwise in the x-direction in a substantially centered mamier along a corresponding first
metal gridline.
6. The semiconductor chip as recited in claim 2, wherein each first-metal structure
layout shape in the region has a width measured in the y-direction that is one of a plurality
of widths, the plurality of Widths including a first width and a second width, the first width
smaller than the second width, the first-metal layer including at least one first-metal structure
formed in part by a first-metal structure layout shape that has the first width, the first-metal
layer including at least one first-metal structure formed in part by a first-metal structure
layout shape that has the second width, wherein each first-metal-to-second-metal via
structure that contacts a first-metal structure formed in part by a first-metal structure layout
shape having the first width is formed at least in by a first-metal-to-second-metal via
structure layout shape that is intersected by a corresponding first-metal gridline.
37
7. The semiconductor chip as recited in claim 6, wherein each first-metal-to-second
metal via structure layout shape is intersected by a corresponding first-metal gridline.
8. The semiconductor chip as recited in claim 2, wherein adjacent second-metal
gridlines are separated from each other by a second-metal pitch, the second-metal pitch
equal to the gate pitch, the second-metal horizontal grid aligned with the diffusion contact
grid.
9. The semiconductor chip as recited in claim 8, wherein all second-metal structure
layout shapes in the region of the semiconductor chip have a same width as measured in the
x-direction.
10. The semiconductor chip as recited in claim 9, further comprising:
i a third-metal layer fonned above the second-metal layer within the region of
the semiconductor chip, the third-metal layer positioned third in the stack of metal
layers counting upward from top surfaces of the gate electrode features, the third
metal layer separated from the second-metal layer by at least one insulator material,
the third-metal layer including third-metal structures formed in part based on
corresponding third-metal structure layout shapes used as an input to a lithography
process, the third-metal layer layout shapes positioned in accordance with a third
metal vertical grid, the third-metal vertical grid including at least eight third-metal
gridlines, wherein all third-metal gridlines extend in the X-direction,wherein at least
eight of the at least eight third-metal gridlines have at least one third-metal structure
layout shape positioned thereon, each third-metal structure layout shape in the region
having a substantially rectangular shape and positioned to extend lengthwise in the
x-direction in a substantially centered manner along an associated third-metal
giidline,
38
wherein some third-rnetal structures within th_e region are electrically
connected to at least one second-metal structure within the region through at least
one second-metal-to-third-metal via structure: each second-metal-to-third-metal via
structure within the region formed in part based on corresponding second-metal-to
third-metal via structure layout shape used as an input to a lithography process,
wherein at least one second-metal-to-third-metal via structure layout shape within
the region is positioned in a substantially centered manner along an associated third
metal gridline.
ll. The semiconductor chip as recited in claim 10, wherein each second-metal-to-third
metal via structure layout shape is intersected by a corresponding second-metal gridline.
12. The semiconductor chip as recited in claim 10, wherein each second-metal structure
layout shape in the region is positioned next to at least one other second-metal structure
layout shape on a first side at a second-metal pitch and is positioned next to at least one other
second-metal structure layout shape on a second side at the second-metal pitch, wherein the
second-metal pitch is measured in the x-direction and is equal to the gate pitch.
14. The semiconductor chip as recited in claim 1, wherein at least one of the at least six
gate contact structures is in physical and electrical contact with, and is substantially
centered in the x-direction on, a gate electrode feature within the region that forms at least
one gateelectrode of at least one transistor of the first transistor type and that does not form
a gate electrode of a transistor of the second transistor type.
15. The semiconductor chip as recited in claim l, wherein each of the at least six gate
contact structure layout shapes is intersected by a corresponding gate gridline.
16. The semiconductor chip as recited in claim 1, wherein the first-metal layer includes
at least eight first-metal structure layout shapes positioned on four first-metal layer
39
gridlines such that a different two of the at least eight first-metal structure layout shapes is
positioned on each of the four first-metal layer gridlines, wherein each of the at least eight
first-metal structure layout shapes is positioned next to and spaced apart from at least one
other first-metal structure layout shape at a first-metal pitch. '
17. The semiconductor chip as recited in claim 1, wherein the at least eight of the at least
eight first-metal gridlines that have at least one first-metal structure layout shape positioned
thereon are spaced at a first-metal pitch.
18. The semiconductor chip as recited in claim 1, further comprising:
a second-metal layer formed above the first-metal layer within the region of
the semiconductor chip, the second-metal layer positioned second in the stack of
metal layers counting upward from top surfaces of the gate electrode features, the
second-metal layer separated from the first-metal layer by at least one insulator
\
material, the second-metal layer including second-metal structures fonned in part
based on corresponding second-metal structure layout shapes used as an input to a
lithography process, the second-metal structure layout shapes positioned in
accordance with a second-metal horizontal grid, the second-metal horizontal grid
including at least eight second-metal gridlines, wherein all second-metal gridlines
extend in the y-direction, wherein at least eight of the at least eight second-metal
gridlines have at least one second-metal structure layout shape positioned thereon,
each second-metal structure layout shape in the region having a substantially
rectangular shape and positioned to extend lengthwise in the y-direction in a
substantially centered manner along an associated second-metal gridline; and
a third-metal layer formed above the second-metal layer within the region of
the semiconductor chip, the third-metal layer positioned third in the stack of metal
40
layers counting upward from top surfaces of the gate electrode features, the third
metal layer separated from the second-metal layer by at least one insulator material,
the third-metal layer including third-metal structures formed in part based on
corresponding third-metal structure layout shapes used as an input to a lithography
r process, the third-metal structure layout shapes positioned in accordance with a third
metal vertical grid, the third-metal vertical grid including at least eight third-metal
gridlines, wherein all third-metal gridlines extend in the x-direction, wherein at least
eight of the at least eight third-metal gridlines have at least one third-metal structure
layout shape positioned thereon, each third-metal structure layout shape in the region
having a substantially rectangular shape and positioned to extend lengthwise in the
x-direction in a substantially centered manner along an associated third-metal
gridline.
19. The semiconductor chip as recited in claim 18, wherein each first-metal structure
layout shape in the region has a width measured in the y-direction that is one of a plurality
of widths, the plurality of widths including a first width and a second width, the first width
smaller than the second width, the first-metal layer including at least one first-metal structure
fonned in part by a first-metal structure layout shape that has the first width, the first-metal
layer including at least one first-metal structure formed in part by a first-metal structure
layout shape that has the second width, wherein each first-metal-to-second-metal via
structure that contacts a first-metal structure formed in part by a first-metal structure layout
shape having the first width is formed at least in part by a first-metal-t0-second-metal via
structure layout shape that is intersected by a corresponding first-metal gridline.
20. The semiconductor chip as recited in claim 18, wherein some third-metal structures
within the region are electrically connected to at least one second-metal structure within the
41 ' ,
region throughat least one second-metal-to-third-metal via structure, each second-metal-to
third-metal via structure formed at least in part by a second-metal-to-third-metal via structure
layout shape that is intersected by a corresponding second-metal gridline.
22. The semiconductor chip as recited in claim 18, wherein the at least four transistors
of the first transistor type include a first transistor of the first transistor type, wherein the at
least four transistors of the second transistor type include a first transistor of the second
transistor type, wherein a gate electrode feature layout shape used to form a gate electrode
feature that forms a gate electrode of the first transistor of the first transistor type and a gate
electrode feature layout shape used to form a gate electrode feature that forms a gate
electrode of the first transistor of the second transistor type are positioned to extend
lengthwise along a same gate gridline, wherein no other transistor is positioned on the same
gate gridline between the gate electrode feature layout shapes used to form the gate electrode
features that form the gate electrodes of the first transistor of the first transistor type and the
first transistor of the second transistor type,
l wherein each transistor within the region of the semiconductor chip is formed
in part by a corresponding diffusion region, wherein a diffusion region of the first
transistor of the first transistor type is electrically connected to a diffusion region of
the first transistor of the second transistor type,
wherein the at least six gate contact structure layout shapes include a gate
contact structure layout shape substantially centered in the x-direction on the sanie
gate gridline at a location between the diffusion regions of the first transistor of the
first transistor type and the first transistor of the second transistor type, _
wherein an electrical connection between the diffusion region of the first
transistor of the first transistor type and the"diffusion region of the first transistor of
42
\
the second transistor type includes at least one first-metal structure and at least one
second-metal structure,
wherein the at least four transistors of the first transistor type and the at least
four transistors of the second transistor type within the region collectively form part
of an inverting two-to-one multiplexer.
23. The semiconductor chip as recited in claim 22, wherein adjacent second-metal
gridlines are separated from each other by a second-metal pitch, the second-metal pitch
equal to the gate pitch, the second-metal horizontal grid aligned with the diffusion contact
grid. - 4
24. The semiconductor chip as recited in claim 23, wherein all second-metal structure
layout shapes in the region of the semiconductor chip have a same width as measured in the
x-direction.
25. The semiconductor chip as recited in claim 1, wherein the at least four transistors of
the first transistor type are collectively separated from the at least four transistors of the
second transistor type by an inner region that does not include another transistor.
26. The semiconductor chip as recited in claim 25, wherein at least one of the at least six
gate contact structure layout shapes is positioned over the imier region and fonns a gate
contact structure that is in physical and electrical contact with, and is substantially centered
in the X-directionon, a gate electrode feature within the region that forms at least one gate
electrode of at least one transistor.
27. _ A semiconductor chip, comprising:
gate electrode features formed within a region of the semiconductor chip,
the gate electrode features formed in pan based on corresponding gate electrode
feature layout shapes used as an input to a lithography process, the gate electrode
‘L3
1
feature layout shapes positioned in accordance with a gate horizontal grid that
includes at least seven gate gridlines, wherein adjacent gate gtidlines are separated
from each other by a gate pitch, each gate electrode feature layout shape in the region
having a substantially rectangular shape and positioned to extend lengthwise in a y
direction in a substantially centered manner along an associated gate gridline,
wherein each gate gridline has at least one gate electrode feature layout shape
positioned thereon, wherein at least one gate electrode feature layout shape within
the region corresponds to a gate electrode feature that fonns at least one gate
electrode of at least one transistor of a first transistor type and does not form a gate
electrode of a transistor of a second transistor type, wherein at least one gate electrode
feature layout shape within the region corresponds to a gate electrode feature that
forms at least one gate electrode of at least one transistor of the second transistor type
and does not form a gate electrode of a transistor of the first transistor type;
p a number of gate contact structures fonned within the region of the
semiconductor chip, the gate contact structures fonned in part utilizing
corresponding gate contact structure layout shapes as an input to a lithography
process, wherein each gate electrode feature that forms any transistor gate electrode
within the region has a respective top surface in physical and electrical contact with
a corresponding gate contact structure formed at least in part from a gate contact
structure layout shape having a substantially rectangular shape, wherein each gate
contact structure that contacts a given gate electrode feature that forms any transistor
gate electrode does not contact another gate electrode feature, wherein any gate
contact structure layout shape that has a corresponding length greater than or equal
44
to a-corresponding width is oriented to have its corresponding length extend in an x
direction; and I
a first-metal layer formed above top surfaces of the gate electrode features
within the region of the semiconductor chip, the first-metal layer positioned first in
a stack of metal layers counting upward from top surfaces of the gate electrode
features, the first-metal layer separated from the top surfaces of the gate electrode
features by at least one insulator material, the first-metal layer including first-metal
structures formed in part based on corresponding first-metal structure layout shapes
used as an input to a lithography process,
wherein each transistor within the region is fonned in part by a corresponding
diffusion region, each dlffl1Si0!1region formed in part utilizing a corresponding
diffusion region layout shape as an input to a lithography process, wherein each
diffusion region that fonns part of any transistor within the region is formed at least
in part by a corresponding diffusion region layout shape that has a substantially
rectangular shape,
wherein the region includes at least four transistors of the first transistor type
and at least. four transistors of the second transistor type that collectively form a
portion of a multiplexer or a portion of a latch, wherein at least two first-metal
structures form portions of one or more electrical connections within the multiplexer
or the latch.
A semiconductor chip, comprising:
gate electrode features formed within a region of the semiconductor chip,
the gate electrode-features formed in part based on corresponding gate electrode
feature layout shapes used as an input to a lithography process, the gate electrode
45 a
feature layout shapes positioned in accordance with a gate horizontal grid that
includes a number of gate gridlines, wherein adjacent gate gridlines are separated
from each other by a gate pitch, each gate electrode feature layout shape in the region
having a substantially rectangular shape and positioned to extend lengthwise in a y
direction in a substantially centered manner along an associated gate gridline,
wherein each gate gridline has at least one gate electrode feature layout shape
positioned thereon, wherein at least one gate electrode feature layout shape within
the region corresponds to a gate electrode feature that forms at least one gate
electrode of at least one transistor of a first transistor type and does not form a gate
electrode of a transistor of a second transistor type, wherein at least one gate electrode
feature layout shape within the region corresponds to a gate electrode feature that
forms at least one gate electrode of at least one transistor of the second transistor type
and does not fonn a gate electrode of a transistor of the first transistor type;
a number of gate contact structures formed within the region of the
semiconductor chip, the gate contact structures formed in part utilizing
corresponding gate contact structure layout shapes as an input to a lithography
process, wherein each of at least six gate electrode features within the region has a
respective top surface in physical and electrical contact with a corresponding gate
contact structure formed at least in part from a gate contact structure layout shape
having a substantially rectangular shape, wherein each gate contact structure is
centered in an x-direction on the gate electrode feature with which it physical
contacts, wherein each gate contact structure layout shape that has the substantially
rectangular shape has a corresponding length greater than or equal to a corresponding
width and is oriented to have its corresponding length extend in the x-direction,
46
wherein each of the number of gate contact structures is in physical contact with only
one of any of the gate electrode features; and '
' a first-metal layer formed above top surfaces of the gate electrode features
within the region of the semiconductor chip, the first-metal layer positioned first in
a stack of metal layers counting upward from top surfaces of the gate electrode
features, the first-metal layer separated from the top surfaces of the gate electrode
features by at least one insulator material, the first-metal layer including at least two
first-metal structures formed in part based on corresponding first-metal structure
layout shapes used as an input to a lithography process, the at least two first-metal
structures forming portions of one or more electrical connections within the region
of the semiconductor chip,
wherein each transistor within the region is formed in part by a corresponding
diffusion region, each diffusionregion formed in part utilizing a corresponding
diffusion region layout shape as an input to a lithography process, wherein each
diffusion region that forms part of any transistor within the region is formed at least
in part by a corresponding diffusion region layout shape that has a substantially
rectangular shape.
CLAIM CONSTRUCTION
A Construction of the Agreed-Upon Claim Term
Prior to the Markman hearing, the Parties reached agreement regarding the construction of
one term lI1the asserted claims: C . '
Claim Term Present in Asserted Claims Agreed Construction
“a lithography process” ’335 Patent at claims 1, 2, 10, 'Plain and ordinary meaning;
20, 29, 30 i.e., “a process by which a
pattem is imprinted on a resist
47"
’523 Patent at claims 1, 2, 10, or semiconductor wafer using
18, 27, 28 light as a mask”
(JC, App’x A at 1.) V
B. Construction of the Disputed Claim Terms
1. “linear [conductive segment(s) I conductive structure(s)]”
As shown in the chart below, this term is found in the claim language of the now
terminated ’966 and ’012 patents; however, it is not fotmd in the claim language of the remaining
Asserted Patents. In its motion to terminate, Tela contends that this term no longer needs to be
construed. (EDIS Doc. ID 688619.) Respondents and the Staff, however, contend that the claim
language still needs to be construed because the term applies even to the claims of the remaining
Asserted Patents. (EDIS Doc. IDs 689665, 689247; see RRMB at 14-15; SMB at 19-22.) The
Parties proposed the following constructions:
Claims
Relevant ’966 patent at claims 2, 3, 6, 7, 9-12, 21-23, 25-27, 29-30, 32-33
’0l2 patent at claims 2-4, 6-8, ll-16, 18-21, 23-28, 31-35
Tela Respondents Staff
linear: “a 3D conductive
structure having a rectangular
shape of a given width defined
in a plane parallel to a top
surface of the substrate and
defined to have a length that
extends in one direction”
linear conductive segment /
linear: “having a consistent
vertical cross-section
shape and extending in a
single direction
over the substrate”
linear conductive segment(s) /
linear conductive structure: linear conductive structures:
No further construction
required beyond the ‘
construction of “linear.” Plain
and ordinary meaning.
no additional construction
needed beyond
“linear”
“linear-shaped feature(s), in a '
given layer, that is a 3-D
conductive structure
characterized as having a
consistent vertical cross
section shape and extending
straight without bends in a
single lengthwise direction
over the substrate, and having
a 2-D rectangular shape of a
given width defined in a plane
parallel to atop surface of the
substrate”
(JC, App’x A at 2-4.)
48
/ ' ~ '
Respondents and the Staff advance five basic arguments for why this term should be read
into claims that do not explicitly contain it. First, Respondents and the Staff point out that Tela
initially proposed a construction of another claim term (“gate pitch”) which seemingly incorporated
this term, but later “reneged from its own construction.” (RIMB at 23; see SMB at 20.) This point
would be more persuasive had Tela changed its position after the completion of, or in the midst of,
briefing on claim construction. Instead, Tela changed its position before it had to commit to a
position, and the argument is essentially beside the point.
1 ' Second, the Staff correctly observes that the specification emphasizes the importance of all
chip features above the diffusion region possessing “linear” shapes. (SMB at 19 (quoting ’523
patent at 10:4-5 (“in each layer other than the diffusion region layer 203, only linear-shaped features
are allowed”) (emphasis omitted)).) But there is generally no language in the claims corresponding
to “linear,” so it is improper to import that limitation from the specification. Evenia large number
of references to the importance of linearity—the Staff counts over 50 such references—are not alone
enough to justify limiting the claims as the Staff proposes. (SMB at 19-20.) And even assuming
that the patentees acted as their own lexicographers, as the Staff contends, that lexicography at most
defines the term “linear,” which, again, is not found in the remaining claims in suit. (SMB at 14.)
Third, Respondents argue for the term’s general applicability based on the prosecution
history of the ’523 patent, which includes the following statement: “[t]he gate structures are defined
as rectangular-shaped, i.e., linear shaped, features extending in a parallel relationship across the
dynamic array in the second reference direction (y).” (RIMB at 22 (quoting RIMB, Ex. 18 at 17
(emphasis omitted)).) This argument has two defects. First, even though the ’523 patent shares a
specification with the ’334 and ’335 patents, that the patentee’s representation applies to the former
patent does not necessarily mean that it also applies to the latter two patents, which both issued
(49
before the ’523 patent. Second, the representation appears to be gratuitous; nothing in the
_ D
prosecution history suggests that it was necessary for allowance, or intended as a disclaimer.
Fourth, Respondents contend that where the remaining claims in suit use the term
“rectangular,” that tenn should be read as “linear.” (RRMB at 14.) Certainly the tenn “rectangular”
is found throughout the claims of the ’334, ’335, and ’523 patents, and applies to various claimed
features. (E.g., ’523 patent at 24:61 (“gate electrode feature”), 31:15 (“gate contact structure”),
32:56 (“diffusion region layout shape”).) But there is no evidence the patentees acted as their own
lexicographers in connection with the term “rectangular,” and as explained above, the prosecution
history does not mandate any deviation from the terrn’s plain and ordinary meaning. Most
importantly, even assuming that the term “linear” is defined by the specification—narnely, “having
a consistent vertical cross-section shape and extending in a single direction over the substrate”—the
plain and ordinary meaning of “rectangular” is unquestionably different and simpler. (’523 patent
at 10:7-8.) p V
Fifih, Respondents argue that in a parallel litigation before the United States District Court
for the Northem District of California, the court’s tentative claim construction “illustrate[s] that
construing ‘linear’ is required to define the scope” of other claim terms. (EDIS Doc. ID 689665 at
2.) But again, there is generally no language in the claims of the remaining Asserted Patents
corresponding to “linear,” and in any event the District Court’s claim construction is not binding in
this investigation.
Accordingly, “linear [conductive segment(s) / conductive stmcture(s)]” is not an element of
any claim of the remaining Asserted Patents, and is therefore not construed.
2. “gate electrode”
The Parties disagree on the proper claim construction and have proposed the following
constructions:
50
Relevant ’334 patent at claims 1, 22, 24, 29, 30
Claims
’335 patent at claims 1, 22, 24, 29, 30
’523 patent at claims 1, 2, 4, 10, 14, 18-22, 26-28 _
Tela 9 ' Respondents Staff
“portion of linear conductive “a portion of a conductive “portion of a linear-shaped
segment (’966 and ’0l2 shape in the gate layer that feature in the gate electrode
Patents) /gate structure (’334 extends over and parallel with layer that is used to control
and ’335 Patents) / gate a diffusion region to form a the flow of electrical current
electrode feature (’523 Patent) transistor gate” between the source and drain
used to control the flow of diffusion regions of a
electrical current between the ‘ transistor”
source and drain regions of a
transistor”
(JC, App’x A at 5-6.)
References to gates, components of gates, and the structure of gates varies between the
Asserted Patents. In the ’334 and ’335 patents, the claims use the term “gate structure” in reference
to an element that, in some instances, forms a “gate electrode.” (E.g., ’334 patent at 30:18-19; ’335
patent at 31:4.) Inthe ’523 patent, by contrast, the claims use the tenn “gate electrode feature,”
seemingly in reference to the same element, because it “forms at least one gate electrode.”
(E.g., ’523 patent at 24:67-25:1.) The specification uses the tenns “gate electrode” and “gate
electrode feature,” as well as “gate electrode track,” but not “gate structure.” (E.g., ’523 patent at
9:43-45 (“gate electrode features 207 are defined above the diffusion regions 203 to form transistor
gates”); 15:9-12 (“the gate electrode tracks extend over the substrate . . . the gate electrodes may
extend through the boundaries at the top and bottom of the cells”).)
The Parties apparently agree, at least implicitly, that “gate structure” and “gate electrode
feature” areisynonymous, and this is supported by the intrinsic evidence. (CIMB at 24; RJMB at
21; SMB at 22 & n.11.) Although a gate is made of two parts, a metal and an oxide, and the oxide
necessarily is not itself an electrode (because it does not conduct electricity), both the metal part of
51
the gate alone and the metal/oxide combination could be considered electrodes. (See Tutorial at ll
13.) So I find that the terms “gate electrode feature,” “gate structure,” and “gate electrode track” all
refer to the same structure, which forpresent purposes I call the “gate electrode feature.”
So understood, the parties further agree that for a “gate electrode feature” to carry out its
principal function, that is, to form a transistor gate, at least a portion of it must extend over a
diffusion region and control the cun'ent flowing between the source and drain. (CIMB at 28-29;
RIMB at 26; SMB at 27.) This is supported by the specification. (’523 patent at 9:43-45 (“gate
electrode features 207 are defined above the diffusion regions 203 to fonn transistor gates).) So a
“gate electrode” is simply that portion of a “gate electrode feature” which actually forms a transistor
gate; it is redundant to add limitations conceming sotuce, drain, and diffusion region.
Respondents and the Staff urge a construction limiting the “gate electrode” to a particular
shape—for Respondents, a conductive shape, and for the Staff, a linear shape. <Respondents also
argue for a construction limiting the “gate electrode” to a “gate layer” parallel with the diffusion
region. And the Staff advances a construction limiting the “gate electrode” to a gate electrode layer.
These requirements are inappropriate because they are not even arguably within the plain
and ordinary meaning of a “gate electrode.” Although the specification refers to a “gate electrode
layer,” nothing in the claim language suggests that the “gate electrode” is limited to such a layer.
(’523 patent at 14:20.) The term “gate layer” is mentioned nowhere in the intrinsic evidence, and
the term is therefore ambiguous. And the tenn “linear” does not apply to “gate electrode,” nor does
the claim language suggest that a “gate electrode” must be some other shape. i
' Accordingly, “gate electrode” is construed as “that portion of a gate electrode feature that
fonns a transistor gate.” ’
52
/
3. “gate electrode feature(s) / gate structure(s)” "
The Parties disagree on the proper claim construction and have proposed the following
constructions: t A
Relevant ’334 patent at claims 1, 2, 4, 10, 20, 22, 29, 30
Claims
’335 patent at claims l, 2, 4, 10, 20, 22, 29, 30
’523 patent at claims 1, 2, 4, 10, 14, 18, 22, 26-28
Tela I Respondents I Staff
“feature that can form a “linear-shaped feature “linear/-shapedfeature that can
gate(s) of a transistor(s) comprising a gate(s) of a form a gate(s) of a
defined below the gate transistor(s) or a dummy gate?’ transistor(s) defined below
contact” the gate contact layer”
(JC, App’x A at 4-5.) l
A As reflected in’the table above, and as stated by Tela, the principal interpretive dispute.
“appears to be whether the claimed ‘gate electrode feature’ and ‘gate structure’ require a. ‘linear
shaped feature’ as interpreted by Respondents and Staff." (CIMB at 24.) As explained above, the
term is inapplicable. _
Tela and the Staff further contend that the “gate electrode features” and “gate structures”
must be below the “gate contact” or “gate contact layer.” Tela justifies this limitation in light of
claim language requiring it. (See CIMB at 25-26 (citing ’523 patent at cl. 1; ’334 patent at cl. l; ’335
patent at cl. 1)) and Figure 2 of the ’334, ’335, and ’523 patents (see id. at 26 (citing ’334 patent at
Fig. 2).) The Staff justifies the limitation by reference to Figure 2 of the specification. (SMB at
23.) I disagree that these details should be part of the construction primarily because, as Tela
acknowledges, the presence of electrode contacts positioned above the “gate electrode features” or
“gate structures” is already recited in the claims. (See CIMB at 25-26.) To place it within the
construction of “gate electrode features” or “gate structures” is therefore redundant. Moreover, it is
improper to import a limitation from the specification (such as that shown in Figure 2) into the
53 ‘
claims without better support for that importation. Kara Tech. Inc. v. Stamps.com 1nc., 582 F.3d
1341, 1348 (Fed. Cir. 2009) (“The patentee is entitled to the full scope of his claims, and we will
not limit him to his preferred embodiment or import a limitation from the specification into the
claims.”). "
Lastly, the Parties dispute the proper method for capturing the fact that a “gate electrode
feature” or “gate structure” does not necessarily have to act as a transistor gate at every, or even any,
point along its length. For example, “Respondents’ construction recites that the claimed feature
comprises a gate or a dummy gate; Tela and Staff appear to attempt to capture the same concept
5”
using the language ‘can form a gate. (RIMB at 21.) The construction of “gate electrode” is helpful
here. As noted, a “gate electrode” is “that portion of a gate electrode feature that forms a transistor
gate.” It follows that a “gate electrode feature” that does not fonn a transistor gate at any point
’ g
along its length is a dummy gate, that is, one that is designed to form a gate but does not.
_ It further follows that a feature or structure that forms a transistor gate over some but not all
of its length is a feature that “can fonn” a transistor gate, and does, as Tela and the Staff contend.
Respondents’ proposed construction, by using the term of art “comprising,” succinctly characterizes
65 >7
this aspect of the element. (RIMB at 24.) Specifically, a feature that comprises a transistor gate
is a feature that fonns a transistor gate over at least some of its length.
However, in light of the withdrawal of the ’966 and ’0l2 patents, the definition of a dummy
gate is otherwise moot. The_’966 and ’0l2 patents include claims covering dummy gates, that is,
gate electrode features that do not fonn a transistor gate any point along their lengths. (’966 patent
at 27:66-67; ’0l2 patent at 33:19-20.) The ’334, ’335, and ’523 patents do not, however; every
claim of these patents reciting the limitation “gate electrode feature that . . . does not form a gate
electrode” is accompanied by the limitation “forms at least one gate electrode” of the other transistor
type. For instance, claim l of the ’523 patent recites: “a gate electrode feature that forms at least
54
one gate electrode of at least one transistor of a first transistor type and does not form a gate electrode
of a transistor of a second transistor type.” (’523 patent at 24:67-25:3.) Therefore, every claimed
“gate electrode feature” in suit that can form a transistor gate actually does, and the dispute over
how to precisely define a “gate electrode feature” that does not fonn a transistor gate at all need not
be resolved.
Accordingly, a “gate electrode feature” or “gate structure” is construed as a “feature
comprising a transistor gate.”
4. “diffusion region(s)” 1
The Parties disagree on the proper claim construction and have proposed the following
constructions:
Relevant ’334 patent at claims 15, 22, 23, 29, 30
Claims
’335 patent at claims l5, 22, 23
’523 patent at claims 1, 22, 27, 28
Tela I Respondents I Staff
“selected portions of the “selected portions of the “selected portion(s) defined in
substrate within which substrate within which the base substrate located "
impurities have been impurities have been below the gate electrode
introduced to form the source introduced to form the source layer within which impurities
or drain of a transistor” or drain of a transistor” are introduced in order to
form the source and/or drain
of a transistor”
(JC, App’x A at 10-12.) 4 _
As shown in the above table, Tela and the Respondents agree on this term, with the Staff
offering a modified construction that adds two requirements: (1) the referenced substrate is the
“base” substrate; and (2) such substrate is below the gate electrode layer. The Staff supports adding
these details because the specification states that “[d]iffusion regions 203 are defined in the base
substrate 201,” and “gate electrode features 207 are defined above the diffusion regions 203 to fonn
55
transistor gates.” (’523 patent at 9:33-45.) But calling the substrate “base” is redundant; there is
only one substrate, so it is necessarily the “base substrate.” And the term “diffusion region” by itself
is not accompanied in the claims by any particular layer requirement, so there is no reason to import
such a requirement from the specification into the claims. The remaining proposed construction is
otherwise supported by the specification and sufficiently tied to the plain and ordinary meanings of
“diffusion” and “region.” (’523 patent at 9:35-42 (“diffusion regions 203 represent selected regions
of the base substrate 201 within which impurities are introduced” and “diffusion contacts 205 are
defined to enable connection between source and drain diffusion regions 203”).)
Accordingly, “diffusion region(s)” is construed as “selected portions of the substrate within
which impurities have been introduced to form the source or drain of a transistor.”
5. “[gate horizontal / first-metal vertical grid]; [second-metal horizontal]
grid; [contact vertical] grid; [third-metal vertical] grid; [diffusion contact]
grid” _
The Parties disagree on the proper claim construction and have proposed the following
constructions: '
Relevant ’334 patent at claims 1, 2, 5, 10, 20, 22, 29, 30
Claims
’335 patent at claims 1, 2, 5, 10, 20, 29, 30
’523 patent at claims 1, 2, 5-8, 10, 11, 15-20, 22, 23, 27, 28
Tela ' Respondents I Staff
“virtual projected “projected grid used during projected grid used during
gridlines alongwhich [gate fabrication of a given layer fabrication of a given layer
/metal / contact] features are along which [gate / metal / along which [gate / metal /
defined” contact] linear-shaped features contact] linear-shaped features
' are formed” are formed”
(JC, App’x A at 12-13.) ,
56
\
As reflected in the table above, one of the Parties’ disputes over the term “grid,” with its
various modifiers, again concems the requirement of “linear-shaped features.” And again, the
limitation is inapplicable. I ‘
A second dispute is over how the grid must be “projected,” although the Parties agree that
such a projection is required. The Staff argues that the grid is “an actual projection of a grid,” while
Tela argmesthat the grid projection is virtual. (SMB at 37 (emphasis omitted); CIMB at 40; CRMB
at 20.) The Staff cites one passage of the specification: “the base grid is projected in a substantially
consistent manner with respect to position on each layer of the dynamic array, thus facilitating
accurate feature stacking and alignment.” (Id. at 37-38 (citing ’334 patent at 13:9-13).) But in the
preceding sentence the specification makes clear that the grid is “not physically definedas part of
the dynamic array,” and instead “can be considered as a projection on each layer of the dynamic
array.” (’334 patent at 13:7-9.) It may be true that, just as a “movie projected on a screen is not
physically a part of the screen,” an actual projection of a grid during fabrication is also not physically
part of the dynamic array, but this observation from Respondents sheds no light on whether the
specification requires an actual projection. (RRMB at 23.) ’
More to the point, it is what the claims require that controls here, but the claims do not even
require a projection, actual or virtual. And in the ’335 and ’523 patents, where “grid” is used, the
claims typically refer to “layout,” and in many instances to “layout shapes used as an input to a
lithography process.” (E.g., ’335 patent at 30:5-6; ’523 patent at 24:54-56.) The term “layout” by
If
itself, and especially combined with “input to a lithography process,” suggests that if the grid is
“projected” if at all, it is not actually projected onto a wafer. (See ’523 patent at 8:8-9 (“addition of
margin in the set of design rules assists with the layout portions”).) The claims of the ’334 patent
are even less specific, because they typically refer to “gate structures positioned in accordance with
a . . . grid,” with no limitation on how that is achieved. (E.g., ’334 patent at 30:4-5.) .
57
)
In short, the claims (as opposed to the specification) do not require projection of a “grid”
and do not require such projection to be either virtual or actual. Nonetheless, because the Parties
agree that the “grid” is projected, and this requirement is supported by the specification, it will be
incorporated into the term’s construction. ("S23 patent at 11:18-19 (“the base grid can be
considered as a projection on each layer of the dynamic array”).)
The third dispute between the Parties pertains to when the grid is used, specifically, whether
during design or fabrication; this dispute overlaps with the Parties’ dispute over the construction of
“gridline(s).” (RIMB at 41 (“[t]he first dispute (formed vs. defined) is addressed below in the
context of the ‘gridlines’ term”); CRMB at 22.) Nothing in the claim language explicitly addresses
this issue, but again, in the ’335 and ’523 patents, where “grid” is used the claims typically refer to
“layout,” and in many instances to “layout shapes used as an input to a lithography process,” where
the “layout shapes are positioned in accordance with a . . . grid.” (E.g., ’335 patent at 30:5-8; ‘523
patent at 24:54-56.) The various features are then “formed in part based on [the] layout shapes.”
(E.g., ’335 patent at 30:4-5; ’523 patent at 24:52-54.) That the claims require positioning the shapes,
as opposed to the features, and then forming the features based on the shapes, implies that the “grid”
is used during the layout process, that is, before fabrication. This is consistent with the layout stage
of integrated circuit manufacturing described by Respondents’ expert. (See RIMB, Ex. 6 at 6 (“A
layout represents the size, shape, and spacing guidelines for a given layer in a transistor”); see also
Comp. Tutorial at 2 (describing “Layout & Simulation” as occurring before “Fabrication &
Verification”).) Nothing in the claim language, however, bars the grid from also being used during
fabrication or any other stage in the manufacturing process.
In the ’334 patent, by contrast, the claims do not include the word “layout” at all. Instead,
the various claimed “structures” must be “positioned,” either “in accordance with a . . . grid,” or
“on . . . gridlines,” or “along a . . . gridline.” (E.g., ‘334 patent at 30:4-5, 31:4-5, 31:43-48.) As
58 i
I
Respondents point out, the prosecution history is to similar effect. (RIMB at 43-44 (quoting RIMB,
Ex. 20 at 24).) In response, Tela argues that formation of a structure is not the same as placement,
or positioning of shapes. (CRMB at 21-22.) I disagree. “Positioning” a “structure,” as opposed to
a shape, is most naturally understood as building or forming a structure in a particular location.
Therefore, in the ’334 patent the “grid” is used, that is, projected, during fabrication. Nothing in the
claim language bars the grid from also being used during layout or any other stage of the
manufacturing process, however. _ u
Lastly, the parties do not dispute the meaning of “grid” beyond these three disagreements,
so the term will not otherwise be construed.
Accordingly, for the ’335 and ’523 patents, “grid” isiconstrued as “projected gridlines used
at least during the layout stage of integrated circuit manufacturing,” and for the ’334 patent, “grid”
is construed as “projected gridlines used at least during the fabrication stage of integrated circuit
manufacturing.”
6. f‘[gate./ metal I contact] gridline(s)”
The Parties disagree on the proper claim construction and have proposed the following
constructions: . .
Relevant ’334 patent at.claims 1, 2, 5, 10, 20, 22, 29, 30
Claims '
’335 patent at claims 1, 2, 5, 10, 20,29, 30
‘ ’523 patent at claims 1, 2, 5-8, ll), 11, 15-20, 22, 23, 27, 28
Tela I Respondents Staff
“virtual projected lines along “gridline(s) along which [gate “projected lines on a
which [gate/metal/contact] / metal / contact] structures corresponding grid used
features are defined” are formed”, during fabrication along
which [gate / metal /
I contact] linear-shaped features
are fonned”
59
(JC, App’x A at 13-14.)
All of the Parties’ disputes over this term are addressed above, in construing the term “grid.”
The plain and ordinary meaning of “gridline” is otherwise simply one of the lines making up a
“grid.” I -
Accordingly, “gridline” is construed as “one of the lines making up a grid.”
7. “contact structure(s) / gate contact structure(s)” '
-The Parties disagree on the proper claim construction and have proposed the following
constructions:
Relevant ’334 patent at claims 1, 5, 22, 29, 30
Claims
’335 patent at claims 1, 5, 22, 29, 30
’523 patent at claims 1, 5, 14, 15, 22, 26-28
Tela Respondents Staff
“linear conductive structure(s)
in a gate contact layer above
and separate from the gate
layer and below and separate
from interconnect layers”
“a structure that passes
through an insulator to enable
connection of the gate
electrode feature to the
overlying metal conduction
lines” -
“linear-shaped feature,
separate from a gate electrode
feature, that enables
connection of the gate
electrode feature to the
overlying metal conduction
lines, where the linear-shaped
feature is oversized in the
direction perpendicular
to the gate electrode feature
and is located above the gate
electrode layer” ~
(JC, App’x A at 7-9.) .
As with the other disputed claim terms, to the extent a “contact structure” or “gate contact
structure” must be linear, the limitation is inapplicable. In any event, these features are less likely
to possess the “linear-shaped” limitation because the claim language -defines their. shapes.
60
(E.g., ’334 patent at 30:59-64 (“a substantially rectangular shape . . . positioned and sized to overlap
both edges” of the associated gate structure); ‘532 patent at 25:19-24 (same).)
Indeed, the claim language is generally inconsistent with all three proposed constructions.
_Forexample, nothing in the claim language requires passage through an insulator, as Tela proposes.
The only insulator-related limitation in the claims relevant to these claim terms is that the first-metal
layer must be “separated from the top surfaces of the gate electrode features by at least one insulator
material.” (’523 patent at 25:31-33; see ’335 patent at 30:27-29.) And the function of a “contact
structure” is to connect a gate and the overlying metal conduction lines, as both Tela and the Staff
indicate in their proposed constructions, but neither that function nor a structure that would perform
that function is recited in the claim language. The Staff”s proposed limitation that the “contact
structure” be “oversized” is already captured by the “overlap both edges” language, and therefore
redtmdant. (’335 patent at 30:61; ’532 patent at 25:23-24.) The limitation proposed by Respondents
and the Staff, that the “contact structure” be “in a gate contact layer” or “located above the gate
electrode layer” is already captured by the requirement that the “top surface” of the “gate electrode
features” be “in physical and electrical contact” with the “contact structures,” and is also redundant.
(’532 patent at 25:14-18; see ’335 patent at 30:60-63 (the “contact structure” must “overlap both
edges of the top surface”).)
Accordingly, because none of the Parties’ proposed constructions are supported by the claim
language, I decline to construe the term “contact structure” or “gate contact structure” at present. "
8. “gate pitch”
The Parties disagree on the proper claim construction and have proposed the following
constructions:
Relevant ’334 patent at claims 1, 6,11, 29, 30
Claims
’335 patent at claims 1, 6, 11, 29, 30
61
’523 patent at claims 1, 8, 12, 23, 27, 28
Tela T Respondents Staff
“center-to-center separation “center-to-center separation “center-to-center separation
distance between adjacent distance between adjacent distance between adjacent
gate features” linear-shaped gate linear-shaped gate
features” features”
(JC, App’X A at 15-16.)
The Parties’ proposed constructions are identical, except that Respondents and the Staff add
the requirement that the “adjacent . . . gate features” be “linear-shaped.” As noted, this limitation is
inapplicable. The proposed construction is otherwise supported by the specification and sufficiently
reflects the term’s plain and ordinary meaning. (’523 patent at 8:61 (“pitch” refers to “layout feature
spacing”); 17:52 (“pitch (center-to-center spacing)”).) .
Accordingly, “gate pitch” is construed as ‘icenter-to-center separation distance between
adjacent gate features.”
9. “eachfirst-metal structure in the region having at least one adjacent first
metal structure positioned next to each of its sides in accordance with a y
coordinate spacing of less than or equal to 193 nanometers”
The Parties disagree on the proper claim construction and have proposed thefollowing
constructions: .
Relevant ’334 patent at claim 1 '
Claims _ J
’335 patent at claim 1
Tela Respondents Staff
Plain and ordinary meaning. Indefinite. Indefinite.
(JC, App’x A at 16-17.)
Unlike the previous terms, here, Respondents and the Staff contend the limitation “each first
metal structure in the region having at least one adjacent first-metal stmcture positioned next to each
of its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers” is
62 ~
»
indefinite because one of ordinary skill in the art would not be able to ascertain its scope with
reasonable certainty. (RIMB at 49 (citing Nautilus, 572 U.S. at 910); SIMB at 42-43.) Central to
this claim are two premises: (1) that “all of the first-metal structures in the region have adjacent
first-metal structures on both of their sides”; but (2) “there are necessarily two first-metal
structures—at the edges of the region—that only have another first-metal structure adjacent to one
of their sides.” (RIMB at 49 (emphasis in original); see SMB at 44-45.) Respondents reason, “‘each
first-metal structure in the region has at least one adjacent first-metal structure positioned next to
each of its sides’ is thus seemingly impossible to satisfy.” (Id. at 49-50; see SMB at 44-45.)
Respondents use the following demonstrative to show this point, explaining “blue shapes have
shapes next to both of their sides; but the yellow highlighted shapes at the edge of the region cannot”:
t . - e V A ~ “TIT V *_»“"‘t;~L;-.:;};j§15§§;~i?$*{¢h=#¥:1t&%¢§éi§I
I’ - W I W W 5,7,1” 1:‘ 7-'1.>~»<'~r5'-_’<1'31»%_1§-:{~\#,:¢§v~';r<. *3
f_'_ T"~’?W”""77” -'1:
. ~~ w..".-<-‘.~.~._'~:- '1: V‘
7* ' » ' ‘*1’.-\l‘<".*:§¢'-‘5,;'5-*"‘J,r.~r:w"‘W"*“'-1».
(RIMB at 49-50.)
Respondents’ logic actually require a third, unspoken premise—that the “adjacent first-metal
structure(s)” recited in the limitation (shown in yellow above) must also be in the “region.”
Importantly, this premise distinguishes claim 1 of the ’335 patent from claim I of the ’334 patent.
The introduction of the “region” claim term, and “first-metal layer” term, along with the full
limitation at issue here reads:
_ l. A semiconductor chip, comprising:
gate structures formed within a r_egi0nof the semiconductor chip
63
_ )
a first-metal layer formed above top surfaces of the gate structures
within the region of the semiconductor chip, the first-metal layer
positioned first in a stack of metal layers counting upward from top
surfaces of the gate structures, the first-metal layer separated from the
top surfaces of the gate structures by at least one insulator material,
adjacent metal layers in the stack of metal layers separated by at least
one insulator material, wherein the first-metal layer includes first
metal structures positioned in accordance with a first-metal vertical
grid, the first-metal vertical grid including at least eight first-metal
gridlines, each first-metal structure in the region having a
substantially rectangular shape and positioned to extend lengthwise
in an x-direction in a substantially centered manner on an associated
first-metal gridline, eachfirst-metal structure in the region having at
least one aajacent first-metal structure positioned next to each of its
sides in accordance with a y-coordinate spacing of less than or equal
to 193 nanometers, wherein each pair of first-metal structures that are
positioned in an end-to-end manner are separated by a line end-to-line
end gap of less than or equal to about 193 nanometers; and
(’334 patent at cl. 1 (emphasis added); see ’335 patent at cl. 1.) As recited in this excerpt, the term
“region” is not itself specified as beginning or ending at any point. It merely denotes some
subsection or portion of the overall “semiconductor chip.” As additionally recited, there are “gate
structures” within this region, but the “first-metal layer” is not recited as existing entirely within the
region—all that is stated is that the layer is “formed above the top surfaces” of those gate structures
(which happen to exist within the unspecified “region”).
Thus, when claim 1of the ’334 patent and claim l of the ’335 patent later introduce “wherein
the first-metal layer includes first-metal structures,” there is no reason to understand these first
metal structures as necessarily being within the “region.” They are simply part of the “first-metal
layer” which itself is so far only defined as existing “above the top surfaces” of the gate electrodes
within the region. Therefore, at this point in the claim language, the recited “first metal structures”
may be inside or outside the “region.” Contrary to the contentions of Respondents and the Staff,
there is no further language requiring all “first-metal structures” to be within the “region.” Rather,
64
the claim only recites “each first-metal structure in the region.” (’334 patent at cl. 1 (emphasis
added).) I understand this language to simply mean that at least one first-metal structure must be in
the region.
The challenged limitation—“each first-metal structure in the region having at least one
adjacent first-metal structure positioned next to each of its sides”—actually only exists in claim 1
of the ’334 patent. The similar phrasing in claim 1 of the "335 patent importantly leaves out “in the
region”: V
each first-metal structure in the region having at least one adjacent
first-metal structure positioned next to each of its sides . . . .
(’334 patent at cl. 1);
each of the first-metal structures having at least one adjacent first
metal structure positioned next to each of its sides . . . .
(’335 patent at cl. 1). Thus, these limitations must be evaluated separately.
The most natural reading of “in the region” is that only those first-metal structures “in the
region” must have additional first-metal structures on either side. Additional structures may
themselves be outsiiie of the region, and need not have adjacent structures next to both sides. This
point can be illustrated with a modified version of Respondents’ demonstrative, again using blue for
first-metal structures in the “region” and yellow for first-metal structures which are not in the
“region”:
’ , 1 l
”f’“”"_;,_ ___ _u u*__; _;; u V K,t ,_., "J
f , /_._. ,_ As * ,., -,.»._._..m__ 2,, >~~»~<~ ; i;;_'_:A/1My_ W W _ _ H 1 I L ______ ;
Cm;.a,.It.;t___uM..§.l 'J’>~v4\'Y‘<(§@‘; gall; 3\" T:'f_lTfT
“'“““'”"'”" T MT WT“ T ""'““1““"“""“‘Q“_“'“f“'“'“1'“;"_j§ f"f’;" ff?
65
There is nothing incompatible with thisreading and the intrinsic evidence, nor with Apple Inc. v.
Samsung Elecs. C0., 695 F.3d 1370, 1378 (Fed. Cir. 2012) cited by Respondents and the Staff (see
RIMB at 49; SMB at 44), as the “each” in “each first-metal structure in the region having at least
1
one adjacent . . .” is fully honored. Respondents and the Staff have pointed to no intrinsic evidence
to show otherwise. (See RIMB at 49-50; RRMB at 25-26; SMB at 42-47.)
Accordingly, for the limitation as found in claim l of the ’334 patent, I find “each first-metal
structure in the region having at least one adjacent first-metal structure positioned next to each of
its sides in accordance with a y-coordinate spacing of less than or equal to 193 nanometers” is not
indefinite. And because there is otherwise no dispute over the limitation, I further find that it
possesses its plain and ordinary meaning.
However, the challenged limitation as it appears in the ’335 patent does not use the “in the
region” modifier. All first-metal structures, regardless of their location as inside or outside the
“region,” must necessarily have additional first-metal structures on either side. For the exact reasons
explained by Respondents and the Staff, I find this requirement cannot possibly be met, that is, the
outermost first-metal structures cannot have an additional first-metal structure on both sides.
Tela’s argument to the contrary is not persuasive. That argument is rooted in the idea that
“the person [oi] ordinary skill inthe art would understand that this spacing requirement ends at the
botmds of the region as illustrated, for example, in Figure 8A.” (CIMB at 48-49 (citing CIMB, Ex.
7 at 111]92-93).) But Tela’s cited support is limited to its expert’s declaration, which is wholly
conclusory on this point:
92. [Reciting challenged limitations]
93. I disagree that a person of ordinary skill in the art would not '
be able to understand with reasonable certainty, the bounds of these
claim elements. It is well understood in the art that any region of an
integrated circuit is finite in size, and as such it will have a boundary.
A person of ordinary skill in the art, reading the specification would
66
understand that the claim elements are directed to placing a metal 1
structures on each metal gridline in the region. As described in the
Asserted Patents, placing the features on each metal gridline in the
region helps with manufacturability of the features.
(CIMB, Ex. 7 at 111]92-93.) Certainly “any region . . . will have a boundary,” but there is no reason
to think a person of ordinary skill would have understood this limitation to be limited in the way
Tela contends, because the “in the region” language is omitted from the ’335 patent. In re Skvorec,
580 F.3d 1262, 1267 (Fed. Cir. 2009) (“The Board erred in holding that some wire legs need not
have an offset, when the claims state that each wire leg has an offset”); Solomon v. Kimberly-Clark
C0rp., 216 F.3d 1372, 1379 (Fed. Cir. 2000) (“[W]hat the patentee subjectively intended his claims
to mean is largely irrelevant to the claim's objective meaning and scope”).
Accordingly, for the limitation as found in claim 1 of the ’335 patent, I find “each first-metal
structure having at least one adjacent first-metal structure positioned next to each of its sides in
accordance with a y-coordinate spacing of less than or equal to 193 nanometers” is clearly,
convincingly, and necessarily indefinite.
_ 10. “wherein each second-metal structure in the region is positioned next to at
least one other second-metal structure on a first side in accordance with a
. ‘second-metal pitch and is positioned next to at least one other second-metal
structure on a second side in accordance with the second-metal pitch”
The Parties disagree on the proper claim construction and have proposed the following
constructions:
Relevant ’334 patent at claims 6, ll
Claims
’335 patent at claims 6, ll
’523 patent at claim 12
Tela . I Respondents Stafl' 7
Plain and ordinary meaning. Indefinite. Indefinite.
(JC, App’x A at 17-18.)
67
The Parties brief the indefiniteness of this temi along with, and on the same grounds as,
“each first-metal structure [in the region] having at least one adjacent first-metal structure positioned
next to each of its sides in accordance with a y-coordinate spacing of less than or equal to 193
nanometers” discussed above. Unlike those limitations, all three of the ’334 patent, ’335 patent,
and ’523 patent are the same in that they all use the “in the region” language to describe which
“second-metal structure(s)” must have additional second-metal structures on either side. (’334
patent at cls. 6, ll; ’335 patent at cls. 6, ll; ’523 patent at cl. l2.)6
Despite this “in the region” language, however, I find the limitation indefinite for the same
logical reason as claim 1 of the ’335 patent. As noted above, each of the ‘334 patent, ’335 patent,
and ’523 patent introduce the “second-metal layer” which the “second-metal structure(s)” are a part
of, as being included “within” the “region”:
2. The semiconductor chip asrrecited in claim 1, wherein the region
includes a second-metal layer including second-metal structures . . . ~.
(’334 patent at cl. 2);
2. The semiconductor chip as recited in claim 1, wherein the region
includes a second-metal layer including second-metal structures . . . .
(’335 patent at cl. 2);
2. The semiconductor chip as recited in claim 1, further comprising:
a second-metal layer formed above the first-metal layer within the
region of the semiconductor chip . . . .
(’523 patent at cl. 2). .
Given that the “second-metal layer” is defined as being within the “region,” it logically
follows that all of the “second-metal structure(s)” are also within the “region.” Thus, although these
6 The ’335 patent and ’523 patent’s use of “second-metal structure layout shape” (’335 patent
at cls. 6, ll; ’523 patent at cl. 12) instead of “sec0nd-metal structure” as in the ’334 patent (’334
patent at cls. 6, ll) does not affect the indefiniteness analysis. i
t 68
challenged limitations include “in the region,” as in claim l of the ’334 patent, the language is to
the same effect as claim 1 of the ’335 patent: all “second-metal structure(s)” must be within the
“region” and have additional second-metal structures on either side, and those additional second
metal structures must be within the “region” and have additional second-metal structures on either
side, ad infinitum. This is, of course,_an impossibility.
Accordingly, I find “wherein each second-metal structure in the region is positioned next to
at least one other second-metal structure on a first side in accordance with a second-metal pitch and
is positioned next to at least one other second-metal structure on a second side in accordance with
the second-metal pitch” is clearly, convincingly, and necessarily indefinite.
11. “each third-metal structure in the region having at least one adjacent u
third-metal structure positioned next to each of its sides in accordance with
. a y-coordinate spacing of less than or equal to 193 nanometers”
The Parties disagree on the proper claim construction and have proposed the following
constructions:
Relevant ’334 patent at claims 10, 20
Claims
’33S patent at claims 10, 20
Tela Respondents Staff
Plain and ordinary meaning. Indefinite. Indefinite.
(JC, App’x A at 18-19.) V
The Parties brief the indefiniteness of this term along with, and on the same grounds as, the
previous two limitations.7 As with the limitation concerning “second-metal structure(s)” within a
“second-metal layer,” the ’334 and ’335 patents introduce “third-metal structure(s)” as within a
“third-metal layer” which is itself introduced as included “within” the “region”:
7 The ’335 patcnt’s use of “third-metal structure layout shape” (’335 patent at cls. 10, 20)
instead of “third-metal structure” as in the ’334 patent (’334 patent at cls. 10, 20) does not affect the
indefiniteness analysis. 69 '/
10. The semiconductor chip as recited in claim 7, wherein the region‘
includes a third-metal layer including third-metal structures . . . .
(’334 patent at cl. 10);
i 20. The semiconductor chip as recited in claim l . . . . wherein the
region includes a third-metal layer including third-metal structures . .
(’334 patentat cl. 20);
10. The semiconductor chip as recited in claim 7, wherein the region
includes a third-metal layer including third-metal structures . . . .
(’335 patent at cl. 10);
20. The semiconductor chip as recited in claim 1 . . . . wherein the
region includes a third-metal layer including third-metal structures . .
(’335 patent at cl. 20).
Like the “second-metal structure(s)” limitation, the ’334 patent and ’335 patent each use the
“in the region” language to describe which “third-metal structure(s)” must have additional second
metal structures on either side. (’334 patent at cls. 10, 20; ’335 patent at cls. 10, 20.) Despite this
“in the region” language, the limitation is indefinite for the same reasons as above: given that the
“third-metal layer” is defined as being within the “region,” it follows that all of the “third-metal
structure(s)” are also within the “region.” Thus, the same impossible effect is required——a1l “third
metal structure(s)” must have additional third-metal structures on either side and within the
“region.”
70
Accordingly, I find “each third-metal structure in the region having at least one adjacent
third-metal structure positioned next to each of its sides in accordance with a y-coordinate spacing
of less than or equal to 193 nanometers” is clearly, convincingly, and necessarily indefinite.
so ORDERED. “
_
MC/\»~»4€/LCameron Elliot
Administrative Law Judge
71
CERTAIN INTEGRATED CIRCUITS AND PRODUCTS
CONTAINING THE SAME V
, INV. NO. 337-TA-1148
PUBLIC CERTIFICATE OF SERVICE
l, Lisa R. Barton, hereby certify that the attached Order N0. 34 has been served by hand upon
the Commission Investigative Attomey Jolm Shin, Esq., and the following parties as indicated,
on 0t:J_u 22019 y .
Lisa R. Barton, Secretary '
U.S. Intemational Trade Commission
500 E Street SW, Room ll2A
Washington, DC 20436
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